WO2012163540A1 - Dispositif destiné au traitement de surfaces au moyen d'une vapeur à usage industriel - Google Patents

Dispositif destiné au traitement de surfaces au moyen d'une vapeur à usage industriel Download PDF

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Publication number
WO2012163540A1
WO2012163540A1 PCT/EP2012/002329 EP2012002329W WO2012163540A1 WO 2012163540 A1 WO2012163540 A1 WO 2012163540A1 EP 2012002329 W EP2012002329 W EP 2012002329W WO 2012163540 A1 WO2012163540 A1 WO 2012163540A1
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WO
WIPO (PCT)
Prior art keywords
vapor
baffles
vapor deposition
separation
reaction chamber
Prior art date
Application number
PCT/EP2012/002329
Other languages
German (de)
English (en)
Inventor
Stefan Henkel
Jörg DUGGEN
Emmerich Manfred Novak
Original Assignee
Leybold Optics Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Leybold Optics Gmbh filed Critical Leybold Optics Gmbh
Publication of WO2012163540A1 publication Critical patent/WO2012163540A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D45/00—Separating dispersed particles from gases or vapours by gravity, inertia, or centrifugal forces
    • B01D45/04—Separating dispersed particles from gases or vapours by gravity, inertia, or centrifugal forces by utilising inertia
    • B01D45/06—Separating dispersed particles from gases or vapours by gravity, inertia, or centrifugal forces by utilising inertia by reversal of direction of flow
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D45/00—Separating dispersed particles from gases or vapours by gravity, inertia, or centrifugal forces
    • B01D45/04—Separating dispersed particles from gases or vapours by gravity, inertia, or centrifugal forces by utilising inertia
    • B01D45/08—Separating dispersed particles from gases or vapours by gravity, inertia, or centrifugal forces by utilising inertia by impingement against baffle separators
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/002—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by condensation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0623—Sulfides, selenides or tellurides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2258/00—Sources of waste gases
    • B01D2258/02—Other waste gases
    • B01D2258/0216—Other waste gases from CVD treatment or semi-conductor manufacturing

Definitions

  • the invention relates to a vapor deposition apparatus and a device for treating a coating applied to a substrate surface with a vaporous particle flow.
  • Solar cells usually contain a substrate made of glass or plastic, to which an active layer is applied.
  • the active layer has the task to absorb solar radiation and convert it into electricity.
  • the main component of the active layer in many thin-film solar cells a I-III-Vl 2 -type semiconductor, in particular Cu (ln, Ga) Se 2 or CuInS. 2
  • a predetermined stoichiometric composition with as homogeneous a distribution as possible must be achieved during the production of the active layer.
  • a thin layer of Cu, In and Ga a so-called.
  • CIG alloy is first generated on the solar cell substrate; this can be done, for example, by means of a chemical or physical vapor deposition process, by sputtering or sputtering technology. Subsequently, this CIG thin film is exposed in a reaction chamber at an elevated temperature to a Se vapor, a hydrogen selenide gas (SeH 2 gas) or a hydrogen sulfide gas (H 2 S gas) to selenise or sulfurize the CIG thin film and thus to create the CIGS layer.
  • Se vapor Se vapor
  • H 2 gas hydrogen selenide gas
  • H 2 S gas hydrogen sulfide gas
  • the process steam must be removed as quickly as possible and as completely as possible from the reaction chamber in order to be able to supply the coated substrate to the next process stage.
  • DE 197 17 565 A1 shows a selenization furnace in which a precoated substrate is to be treated with selenium vapor.
  • DE 197 17 565 A1 proposes to divide the reaction space into two subspaces which are connected to one another by channels. The substrate is arranged in one of the subspaces, the selenium source in the other subspace. By deliberately increasing and decreasing the temperatures of the subspaces, after the treatment, the excess selenium (at least in part) can be returned to the subspace containing the selenium source.
  • DE 198 30 842 C1 describes a device for separating substances from a gas phase, which has a reactor into which a substrate can be introduced. Downstream of the reactor cooling traps are provided, which serve to catch unused process gases, in particular in a gas generating system vaporized starting products, and to remove them from a carrier gas.
  • EP 1 719 551 A2 describes a venting system having a vacuum chamber, a vacuum pump and a vent line communicating with the treatment chamber and the vacuum pump.
  • the vent line is provided with a first trap device and a second trap device arranged in series in a direction from the processing chamber to the vacuum pump.
  • the first trap device operates at a higher temperature and the second trap device operates at a lower temperature and cooperate to trap components contained in an exhaust gas exiting the treatment chamber.
  • the present invention seeks to improve a device for surface treatment of a substrate coating, in particular for selenization or sulfurization of a CIG thin film, in such a way that the process vapors after treatment quickly and completely can be removed from the reaction chamber and the maintenance, which is caused by deposits of process vapors, can be reduced.
  • the object is solved by the features of the independent claims.
  • Advantageous embodiments are the subject of the dependent claims.
  • the vapor separation device according to the invention with a separation vessel for removing the vapor particles from a reaction chamber is characterized in that baffles are arranged helically in discrete steps, the separation vessel comprising at least one flow path and a plurality of separation steps which are separated from one another by the baffles.
  • baffles ensure that the density of the vapor particles decreases from stage to stage, so that a protective gas, which is returned after passing through the last separation stage in the reaction chamber, only a minimum density contains vapor particles.
  • the baffles are arranged spirally, ie in the manner of a helix (spiral staircase), preferably with a low pitch.
  • the process steam then travels a long way as it flows through the separation vessel, along which it sweeps along the spirally arranged baffle. In this way, the deposition rate of the vapor particles on the baffle is increased.
  • the cross section of the separation vessel does not have to be circular, but may also be square, rectangular or the like.
  • the baffles are arranged substantially along a central axis, preferably of the separation vessel; Preferably, the baffles are arranged in discrete steps along the central axis.
  • the baffles of successive separation stages are preferably arranged axially rotated relative to one another relative to a central axis.
  • two guide plates and one spiral segment preferably each form a helix of a spiral staircase, with two guide plates each being able to be connected by means of a spiral segment.
  • a flow path can lead along the central axis. This may result in a one-piece structure that is removable as a whole from the separation vessel and thus can be easily cleaned.
  • the device according to the invention for treating a coating with a vaporous particle stream applied to a surface of a substrate has a reaction chamber for receiving the substrate during the treatment process and at least one vapor source for generating the particle flow, wherein the vapor deposition device connected to or connectable to the reaction chamber serves to remove the vapor particles is provided from the reaction chamber.
  • a vapor source contained in the reaction chamber generates a flow of process vapor which acts on the substrate coating;
  • the passages between the reaction chamber and separation vessel are closed. After completion of the treatment process, the passages to the separation vessel are opened, the process steam penetrates into the separation vessel and is condensed there.
  • the process steam can be quickly and inexpensively removed from the process chamber. Thereafter, the passages to the separation vessel can be closed again to prevent a return of the collected in the vapor separator process vapors in the process chamber. In this state, the process chamber (eg for removal of the treated substrate) can be vented and / or opened without the risk that process steam penetrates to the outside.
  • a separating container with an inner container which can be taken out of the separating container together with any guide plate and / or baffles arranged in the separating container.
  • the inner container and the guide plate and / or the guide plates can then be subjected to a cleaning, in the course of which the process material deposited on the inner wall of the inner container and the guide plate and / or the guide plates can be recovered and / or disposed of.
  • the baffle and / or the baffles are attached to the inner container in such a way that it and / or these can be easily separated from the inner container and cleaned or replaced separately or can.
  • Suitable metallic materials are steel, brass, aluminum, nickel or copper. On the surface and metallic layers, such as nickel, may be applied. In the case of steel stainless steels are preferred, such.
  • the process vapors precipitate in an easily cleaned or exchanged area of the separation vessel;
  • the process vapors already deposit in the inlet channel of the separation vessel and / or in the region of the passages to the reaction chamber.
  • these areas are advantageously provided with a heater, in particular wall heating, with which these areas are heated and can be heated to a temperature which is above the condensation temperature.
  • the surfaces of the separation vessel, the inner container and / or the baffle and / or the baffles, which are exposed to the process steam, are advantageously made of a material having a high chemical stability to the process steam.
  • a vapor separator in which a selenium-containing vapor is to be separated, it is expedient, for example, to coat the inner surfaces exposed to the process steam with nickel, wherein it has proved to be particularly advantageous to apply a plurality of nickel layers to these inner surfaces by means of a galvanic process.
  • the treatment device according to the invention comprises a reaction chamber and a vapor deposition device, which can be connected to this reaction chamber and is shown above, with the aid of which the process vapors can be removed from the reaction chamber.
  • FIG. 1 shows a schematic sectional view through a device according to the invention for treating a coated substrate with a particle vapor, the device comprising a vapor deposition device for separating excess vapor particles after the treatment;
  • Fig. 2 is a schematic sectional view through the Dampfabborgevorraum the
  • FIG. 3b is a detail view of the spirally arranged baffles of FIG. 3a;
  • FIG. Fig. 4 is a sectional view of a separation vessel arranged in a spiral
  • Fig. 5 is a plan view of an inner container of a separation vessel
  • 6a is a sectional view through a Dampfabborgevoroplasty according to the
  • Fig. 6b is a plan view of the inner container of Fig. 4;
  • Fig. 6c is an oblique view of a helical unit.
  • FIG. 1 shows a schematic sectional view of a device 1 for carrying out a surface treatment of a substrate, as can be used, for example, in the production of a 1-III-VI 2 thin-film layer on a surface 21 of a substrate 20.
  • the substrate 20 may be in particular a glass sheet or a plastic film.
  • the substrate 20 is provided with a thin layer 22 of Cu, In and Ga in a predefined stoichiometric composition, a so-called CIG alloy, into which the particles of an element of group VI, in particular selenium and / or sulfur, to be integrated.
  • the device 1 comprises a reaction chamber 2, in whose interior space 3 at least one vapor source 4 is arranged, preferably a plurality of vapor sources 4, which produce particles of a group VI element, in particular selenium and / or sulfur or selenium and / or hydrogen sulphide. These vaporous particles are identified by reference numeral 23 in FIG.
  • the vapor particles 23 move through the interior 3 of the processing chamber 2 and react with the layer 22 of CIG alloy deposited on the substrate 20 to produce an I-III-VI 2 thin film layer of the desired stoichiometric composition.
  • the process can be carried out under a protective gas, under reduced pressure or in vacuum, for which reason ports 2 for a vacuum pump 26 are provided in the wall 6 of the processing chamber 2.
  • the substrate 20 is moved by means of a conveying device 30 in a feed direction 13 through the vapor source 4 generated by the stream of vaporous particles 23, wherein the vapor source 4 facing surface 21 of the substrate 20 and the one thereon Layer 22 is exposed to the particle stream 23.
  • the feed direction 13 of the conveying device 30 is arranged perpendicular to the plane of the drawing in the sectional view of FIG.
  • a Dampfabscheidevorraum 7 which can also be referred to as a vapor separator 7, provided with a separating vessel 9, which is flanged by a closable passage 8 to the reaction space 2.
  • the vapor separation device 7 is integrated in the device 1 in such a way that the separation of the vapor or of the vapor mixture takes place only after the entry into the separation vessel 9.
  • a feed line 8a can be heated, so that this area of the feed line 8a can be maintained at a temperature above the condensation temperature of the vapor particles 23.
  • the steam or the vapor mixture is passed into the separation vessel 9 at low speed.
  • the residual gas can be vented through an outlet 28a in the outer space. Alternatively, the residual gas may be returned to the reaction chamber 2 through a return passage 28b.
  • FIG. 2 shows a detailed representation of the vapor separation device 7 with the separation vessel 9 of FIG. 1.
  • the separation vessel 9 has the feed line 8a, also referred to as inlet channel 8a, for entry of the vapor or vapor mixture to be separated (arrow 24a shows the direction from which the vapor mixture enters the separation chamber 9 occurs) and the outlet or outlet channel 28a for discharging the residual gas (arrow 24b).
  • the inlet channel 8a is provided with a wall heater 18, with the aid of which the inlet channel 8a can be heated so that no vapor particles 23 settle in this region of the vapor separator 7.
  • the separating vessel 9 contains an inner container 10, which is displaceably mounted in the separating vessel 9 and can be removed from the separating vessel 9 via a closable opening 9a arranged at the end in the separating vessel 9.
  • Inside the separation vessel 9 there are several separation stages 11, which are separated by baffles 12 from each other.
  • the separation tank 9 has at least one flow path between the separation steps 11, so that the inlet channel 8a and the outlet channel 28a are fluidly connected.
  • the baffles 12 are shaped or arranged in such a way that they abruptly dissolve the continuous flow of the penetrating into the Dampfabborgevorraum 7 steam particles 23, so that in the interior of the separation vessel 9, a turbulent flow is formed.
  • the flow paths or a flow channel through the separation stages 11 are designed such that, despite the intensive changes in the flow form and the flow velocity of the vapor or vapor mixture, no relevant pressure increases can occur.
  • the walls 14 of the separation vessel 9 can be cooled by means of a cooling device 15 to a temperature which is substantially lower than the temperature of the vapor or vapor mixture to be deposited.
  • the walls 1 may be provided, for example, with inner channels 16 through which a coolant circulates.
  • the inner container 10 and the baffles 12 is a high thermal conductivity, so that the inner container 10 and the baffles 12 are substantially cooler than the entering into the separating vessel 9 steam particles 23. This ensures that the vapor particles 23 condense on the inner walls 10a of the inner container 10 and the baffles 12.
  • the baffles 12 are attached to the inner container 10, which is displaceably mounted in the separating container 9, so that they are removed together with the inner container 10 from the interior of the separating container 9 (arrow 9b) and can be fed to a cleaning station, in which the inner container 10 and the baffles 12 can be cleaned from the deposited vapor particles 23.
  • FIGs 3a and 3b show an alternative embodiment of a separation vessel 9 'with baffles 12', which are arranged spirally about a central axis.
  • the baffles 12 ' are formed like a circle segment, and have a reduced area compared to a full circle with a recess; see. below Figure 6c.
  • the design of the guide plates 12 ' causes a laminar flow of the steam particles 23 penetrating into the separating vessel 9' to dissolve abruptly, so that a turbulent flow arises in the interior of the separating vessel 9 '. At the same time ensures the helical arrangement of the baffles 12 'that despite the intense changes in the flow shape and the flow velocity of the vapor or vapor mixture no significant pressure increases occur.
  • a spiral cooling coil 16' is arranged, which is flowed through by a cooling medium and by means of which (with the aid of a cooling device not shown in FIG.
  • the baffles 12 ' can be cooled in order to ensure efficient separation of the vapor or vapor To reach steam mixture.
  • the baffles 12 'and the cooling coil 16' form part of an inner container 10 ', which is slidably mounted in the separation vessel 9' and can be removed via a closable opening 9a 'from the separation vessel 9'.
  • the baffles 12 'and the cooling coil 16' can thus be removed together from the interior 10 'of the separating vessel 9' and fed to a cleaning station, in which the guide plates 12 'can be cleaned from the separated vapor particles 23.
  • the materials used for this purpose are selected accordingly.
  • an inner wall 10a, 10'a of the inner container 10, 10 'facing the flow of the steam particles 23 and the guide plates 12, 12' can be provided with suitable surface coatings.
  • the inner container 10, 10 'and the guide plates 12, 12' made of copper or a copper alloy and provided with a multiple coating of nickel.
  • nickel layers are stable to selenium.
  • three to four nickel layers are applied, each of which is about 40 ⁇ thick.
  • the nickel layers can be applied in particular by electroplating; Such nickel layers have a low porosity, so that it can be ensured that no continuous defects occur and the exposed to the process steam surfaces are effectively protected against this vapor.
  • materials for the êtbenzoiter 10, 10 'and the guide plates 12, 12' or at least portions of the inner container 10, 10 'and the baffles 12, 12' may also be provided steel, brass, aluminum or nickel.
  • FIG. 4 shows a sectional view of the vapor separation device 7 with the separation vessel 9 'of FIG. 3a, which comprises the inner container 10'.
  • the separation tank 9 ' has a wall 34, which is configured here in a cylindrical shape, and a bottom 34a. Opposite to the bottom 34a, the opening 9'a is arranged and circumferentially an annular flange 35a.
  • the inner container 10 ' is connected to a flange 35. By means of the flange 35 and the associated annular flange 35a, the inner container 10 'with the separating vessel 9, 9' are connected and secured thereto.
  • the flange 35 is preferably a vacuum flange, such as a KF flange or CF flange. If the flange 35 is detached or separated from the separation vessel 9, 9 ', the opening 9a can be seen. On the flange 35, the passage 8, 8 'and a feed line 39 and a discharge line 40 are arranged, the latter being respectively connected to the cooling coils 16'.
  • the supply line 39 is connected to the cooling coil 16 'which is arranged closest to the flange 35, and the discharge line 40 is connected to the last cooling coil 16' of the cooling coil stack 17 formed by the arranged cooling coils 16 '.
  • the coolant passes through the feed line 39 into the cooling coils 16 'and leaves the cooling coil stack 17 through the discharge line 40.
  • a coolant supply vessel is located between the supply line 39 and the discharge line 40 outside the flange 35 (not shown), in which the coolant is stored.
  • the coolant circuit may be a closed coolant circuit. But it can also be provided that the coolant is generated and then after it has passed through the cooling coils 16 'is discharged through the discharge line 40 to the environment or a collecting container.
  • At least one connecting device 41 which is designed here as a plate 41, is arranged on the flange 35.
  • the plate 41 is preferably connected to the cooling coil 16 'which is arranged closest to the flange 35 and / or to the guide plate 12' which is arranged closest to the flange 35, preferably welded or soldered thereto.
  • the sheet 41 connects the inner container 10 'stably on the flange 35.
  • two connecting means 41 are provided, which are arranged opposite to the flange 35.
  • the connecting device 41 may also be integrally formed as a circular plate 41.
  • the guide plates 12 ' are in thermal contact with the cooling coils 16', preferably they are soldered or welded to these.
  • the cooling coils 16 'and the baffles 12' are made of copper or a copper alloy, they are soldered to provide good thermal contact.
  • a separation stage 11' is formed.
  • the baffles 12 'successive deposition steps 11' relative to a central axis 42 are axially rotated relative to each other.
  • the baffles 12 ' are substantially perpendicular to the central axis 42 of the separation vessel 9' and arranged along it.
  • the baffles 12 'and the spiral segments 43 are made in one piece in the assembled state and thus form a helix or spiral.
  • the particulate vapor 23 can be converted from a laminar flow state into a turbulent flow state and flow through the baffles 12', wherein at the cooled by the cooling medium surfaces 44th Adsorb the vapor particles 23 and thus can be removed from the vapor mixture.
  • the cooling coil 16 'with its individual cooling channels 16' follows the spiral course of the baffles 12 'and the spiral segments 43.
  • the cooling coil stack 17 is thus also arranged spirally.
  • the separation vessel 9 ' also has brackets 45, by means of which the separation vessel 9' can be attached to the reaction chamber 2. Furthermore, the bagging container 9 'has the outlet or outlet channel 28a.
  • FIG. 5 shows the inner container 10 'in an oblique plan view along the central axis 42.
  • the inner container 10' at least comprising the baffles 12 ', the interposed spiral segments 43 and the cooling coils 16', is arranged on the flange 35 and by means of the connecting device 41 at attached to this.
  • the connecting device 41 is formed in this embodiment as a cylindrical plate 41.
  • At the connecting device 41 of the cooling coil stack 17 is arranged with the cooling coils 16 '.
  • the outlet 40 Arranged on the flange 35 is the outlet 40, which is connected to the cooling coil 16 'located farthest away from the flange 35. Shown are four baffles 12 ', wherein the flat surface 44 of the uppermost baffle 12' is completely visible.
  • baffles 12 ' are only partially visible, as these offset or axially twisted to each other along the central axis 42 are arranged.
  • the surface 44 of the baffle 12 ' is typically the size of a half circle segment, but may also be smaller.
  • FIG. 6a shows the inner container 10 'of FIGS. 3a, 3b, 4 and FIG. 5 with ten separation stages 1 1' as a sectional illustration.
  • two baffles 12 'and a spiral segment 43 form a helix 47 or helical unit 47 of the spiral staircase. It can be seen that in the sectional drawing the baffles 12 'are shown as larger or smaller areas according to their respective projection.
  • FIG. 6b shows the vapor deposition device 7 of FIG. 5 as a section perpendicular to the central axis 42. The observer sees four surfaces 44 of baffles 12 'as well as a cooling coil 16' and the flange 35.
  • FIG. 6c shows a helix 47 consisting of two baffles 12 'and the spiral segment 43 arranged therebetween.
  • the surface 44 of the uppermost baffle 12' facing the viewer is in this embodiment an approximately semicircular circle segment with one reaching up to a central region of the circle segment Recess 48 formed.
  • the pitch of the spiral is realized by the Sp segment 43 and the baffles 12 'are substantially planar and are arranged substantially parallel to each other.
  • central cooling channel central coolant line Wendel, helix unit

Abstract

L'invention concerne un dispositif de séparation de vapeur (7) comportant un récipient de séparation (9, 9') destiné à éliminer les particules de vapeur (23) d'une chambre de réaction (2), le récipient de séparation (9, 9') comportant au moins une voie d'écoulement ainsi que plusieurs étages de séparation (11, 11') qui sont séparés les uns des autres par des tôles de guidage (12, 12'). Le dispositif de séparation de vapeur (7) se distingue en ce que les tôles de guidage (12, 12') sont disposées en colimaçon pour former des étages discrets. En outre, l'invention concerne un dispositif (1) destiné au traitement d'un revêtement (22) appliqué sur une surface (21) d'un substrat (20) au moyen d'un flux de particules (23) sous forme de vapeur, pourvu d'une chambre de réaction (2) destinée à recevoir le substrat (20) pendant le processus de traitement et d'au moins une source de vapeur (4) destinée à produire le flux de particules (23), un dispositif de séparation de vapeur (7) étant relié à la chambre de réaction (2) et permettant d'éliminer les particules de vapeur (23) de la chambre de réaction (2). En outre, l'invention concerne un dispositif (1) destiné au traitement d'un revêtement (22) appliqué sur une surface (21) d'un substrat (20) au moyen d'un flux de particules (23) sous forme de vapeur, pourvu d'une chambre de réaction (2) destinée à recevoir le substrat (20) pendant le processus de traitement et d'au moins une source de vapeur (4) destinée à produire le flux de particules (23), un dispositif de séparation de vapeur (7) tel que décrit ci-dessus étant relié à la chambre de réaction (2).
PCT/EP2012/002329 2011-06-01 2012-06-01 Dispositif destiné au traitement de surfaces au moyen d'une vapeur à usage industriel WO2012163540A1 (fr)

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DE102011103788.1 2011-06-01
DE201110103788 DE102011103788A1 (de) 2011-06-01 2011-06-01 Vorrichtung zur Oberflächenbehandlung mit einem Prozessdampf

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113088891A (zh) * 2021-03-09 2021-07-09 中国电子科技集团公司第十一研究所 铟蒸发舟

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE202018005256U1 (de) * 2018-11-13 2020-02-14 Leybold Gmbh Abscheidesystem für Gase bei Hochvakuumeinrichtung

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4551197A (en) * 1984-07-26 1985-11-05 Guilmette Joseph G Method and apparatus for the recovery and recycling of condensable gas reactants
DE19717565A1 (de) 1996-04-26 1997-11-06 Yazaki Corp Vorrichtung und Verfahren zur Bildung von I-III-VI¶2¶-Dünnfilmschichten
US5820641A (en) * 1996-02-09 1998-10-13 Mks Instruments, Inc. Fluid cooled trap
US5819683A (en) * 1995-05-02 1998-10-13 Tokyo Electron Limited Trap apparatus
DE19830842C1 (de) 1998-07-09 1999-10-07 Siemens Ag Vorrichtung zum Abscheiden von Substanzen
US20010003892A1 (en) * 1999-12-15 2001-06-21 Anelva Corporation Exhaust gas filtration device, auxiliary filtration device and trap device
DE10006778A1 (de) 2000-02-09 2001-08-23 Cis Solartechnik Gmbh Verfahren zur Wärmebehandlung von flexiblen, bandförmigen CIS-Solarzellen und Wärmebehandlungsofen
WO2006092550A1 (fr) * 2005-03-02 2006-09-08 Edwards Limited Dispositif de piégeage
EP1719551A2 (fr) 1996-05-23 2006-11-08 Ebara Corporation Système d'évacuation
WO2007129820A1 (fr) * 2006-05-04 2007-11-15 Milaebo Co., Ltd. Dispositif de collecte de sous-produit pour appareil de fabrication de semi-conducteurs
DE202009006288U1 (de) 2009-04-28 2009-07-16 Hsr Ag Schutzvorrichtung für Hochvakuumpumpen, insbesondere Turbomolekularpumpen

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4488887A (en) * 1983-10-17 1984-12-18 R. J. Reynolds Tobacco Company Cold trap
US6488745B2 (en) * 2001-03-23 2002-12-03 Mks Instruments, Inc. Trap apparatus and method for condensable by-products of deposition reactions
DE102004024601A1 (de) * 2004-05-13 2005-12-01 Klaus Dr. Kalberlah Verfahren und Einrichtung zur sequentiellen Bandabscheidung von Selen auf Chalkopyrit-Dünnschicht-Solarzellen
US8187555B2 (en) * 2009-12-15 2012-05-29 Primestar Solar, Inc. System for cadmium telluride (CdTe) reclamation in a vapor deposition conveyor assembly

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4551197A (en) * 1984-07-26 1985-11-05 Guilmette Joseph G Method and apparatus for the recovery and recycling of condensable gas reactants
US5819683A (en) * 1995-05-02 1998-10-13 Tokyo Electron Limited Trap apparatus
US5820641A (en) * 1996-02-09 1998-10-13 Mks Instruments, Inc. Fluid cooled trap
DE19717565A1 (de) 1996-04-26 1997-11-06 Yazaki Corp Vorrichtung und Verfahren zur Bildung von I-III-VI¶2¶-Dünnfilmschichten
EP1719551A2 (fr) 1996-05-23 2006-11-08 Ebara Corporation Système d'évacuation
DE19830842C1 (de) 1998-07-09 1999-10-07 Siemens Ag Vorrichtung zum Abscheiden von Substanzen
US20010003892A1 (en) * 1999-12-15 2001-06-21 Anelva Corporation Exhaust gas filtration device, auxiliary filtration device and trap device
DE10006778A1 (de) 2000-02-09 2001-08-23 Cis Solartechnik Gmbh Verfahren zur Wärmebehandlung von flexiblen, bandförmigen CIS-Solarzellen und Wärmebehandlungsofen
WO2006092550A1 (fr) * 2005-03-02 2006-09-08 Edwards Limited Dispositif de piégeage
WO2007129820A1 (fr) * 2006-05-04 2007-11-15 Milaebo Co., Ltd. Dispositif de collecte de sous-produit pour appareil de fabrication de semi-conducteurs
DE202009006288U1 (de) 2009-04-28 2009-07-16 Hsr Ag Schutzvorrichtung für Hochvakuumpumpen, insbesondere Turbomolekularpumpen

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113088891A (zh) * 2021-03-09 2021-07-09 中国电子科技集团公司第十一研究所 铟蒸发舟
CN113088891B (zh) * 2021-03-09 2023-03-03 中国电子科技集团公司第十一研究所 铟蒸发舟

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