WO2012163540A1

WO2012163540A1 - Apparatus for surface treatment with process steam

Info

Publication number: WO2012163540A1
Application number: PCT/EP2012/002329
Authority: WO
Inventors: Stefan Henkel; Jörg DUGGEN; Emmerich Manfred Novak
Original assignee: Leybold Optics Gmbh
Priority date: 2011-06-01
Filing date: 2012-06-01
Publication date: 2012-12-06
Also published as: DE102011103788A1

Abstract

The invention relates to a steam separator (7) having a separating container (9, 9') for removing the steam particles (23) from a reaction chamber (2), the separating container (9, 9') having at least one flow path and a plurality of separating stages (11, 11'), which are separated from one another by guide plates (12, 12'). The steam separator (7) is characterized in that the guide plates (12, 12') are arranged in the form of a spiral staircase in discrete stages. The invention further relates to an apparatus (1) for treating a coating (22) applied to a surface (21) of a substrate (20) with the steam-like particle stream (23), having a reaction chamber (2) for holding the substrate (20) during the treatment process, having at least one steam source (4) for generating the particle stream (23), wherein a steam separator (7) connected to the reaction chamber (2) is provided to remove the steam particles (23) from the reaction chamber (2). The invention further relates to an apparatus (1) for treating a coating (22) applied to a surface (21) of a substrate (20) with the steam-like particle stream (23), having a reaction chamber (2) for holding the substrate (20) during the treatment process and having at least one steam source (4) for generating the particle stream (23) with a steam separator (7) connected to the reaction chamber (2) as described above.

Description

description

Device for surface treatment with a process steam

The invention relates to a vapor deposition apparatus and a device for treating a coating applied to a substrate surface with a vaporous particle flow.

Solar cells usually contain a substrate made of glass or plastic, to which an active layer is applied. The active layer has the task to absorb solar radiation and convert it into electricity. The main component of the active layer in many thin-film solar cells, a I-III-Vl ₂ -type semiconductor, in particular Cu (ln, Ga) Se ₂ or CuInS. ₂ In order to achieve a high efficiency of these thin-film solar cells, a predetermined stoichiometric composition with as homogeneous a distribution as possible must be achieved during the production of the active layer. For this purpose, a thin layer of Cu, In and Ga, a so-called. CIG alloy is first generated on the solar cell substrate; this can be done, for example, by means of a chemical or physical vapor deposition process, by sputtering or sputtering technology. Subsequently, this CIG thin film is exposed in a reaction chamber at an elevated temperature to a Se vapor, a hydrogen selenide gas (SeH ₂ gas) or a hydrogen sulfide gas (H ₂ S gas) to selenise or sulfurize the CIG thin film and thus to create the CIGS layer.

After completion of the selenization or sulfurization process, the process steam must be removed as quickly as possible and as completely as possible from the reaction chamber in order to be able to supply the coated substrate to the next process stage.

The problem of the removal of excess selenium after the selenization of I-III-VI ₂ thin-film layers is treated, for example, in DE 197 17 565 A1. This document shows a selenization furnace in which a precoated substrate is to be treated with selenium vapor. In order to be able to remove excess selenium vapor after the surface treatment, DE 197 17 565 A1 proposes to divide the reaction space into two subspaces which are connected to one another by channels. The substrate is arranged in one of the subspaces, the selenium source in the other subspace. By deliberately increasing and decreasing the temperatures of the subspaces, after the treatment, the excess selenium (at least in part) can be returned to the subspace containing the selenium source.

1

CONFIRMATION COPY In DE 100 06 778 A1, which deals with the heat treatment of CIS layers of solar cells, it is described as problematic that excessively much selenium evaporates from the CIS layer, has to be post-selenium-fired in the furnace and cools down on this substrate settles. To solve this problem, a separate infrared heating of the space located above the CIS layer is proposed which causes the amount of selenium evaporating from the substrate to decrease. The evaporated selenium can settle only on the inside of the space above the CIS layer or on a metal band covering the CIS layer.

DE 20 2009 006 288 U1 describes a vacuum pump which is used in the manufacture of photovoltaic cells. These pumps must be protected against ingress of process gases and vapors. For this purpose, fenders are provided in the feed of the pump. The process vapors to be pumped fall on these fenders on their way to the pump and can condense on them. The mudguards are arranged in the feeder in such a way that they can be easily and quickly replaced as needed.

DE 198 30 842 C1 describes a device for separating substances from a gas phase, which has a reactor into which a substrate can be introduced. Downstream of the reactor cooling traps are provided, which serve to catch unused process gases, in particular in a gas generating system vaporized starting products, and to remove them from a carrier gas.

EP 1 719 551 A2 describes a venting system having a vacuum chamber, a vacuum pump and a vent line communicating with the treatment chamber and the vacuum pump. The vent line is provided with a first trap device and a second trap device arranged in series in a direction from the processing chamber to the vacuum pump. The first trap device operates at a higher temperature and the second trap device operates at a lower temperature and cooperate to trap components contained in an exhaust gas exiting the treatment chamber.

Based on this prior art, the present invention seeks to improve a device for surface treatment of a substrate coating, in particular for selenization or sulfurization of a CIG thin film, in such a way that the process vapors after treatment quickly and completely can be removed from the reaction chamber and the maintenance, which is caused by deposits of process vapors, can be reduced. The object is solved by the features of the independent claims. Advantageous embodiments are the subject of the dependent claims.

The vapor separation device according to the invention with a separation vessel for removing the vapor particles from a reaction chamber is characterized in that baffles are arranged helically in discrete steps, the separation vessel comprising at least one flow path and a plurality of separation steps which are separated from one another by the baffles.

In this way, a multi-stage deposition of the process steam can be achieved, wherein the baffles ensure that the density of the vapor particles decreases from stage to stage, so that a protective gas, which is returned after passing through the last separation stage in the reaction chamber, only a minimum density contains vapor particles.

The baffles are arranged spirally, ie in the manner of a helix (spiral staircase), preferably with a low pitch. The process steam then travels a long way as it flows through the separation vessel, along which it sweeps along the spirally arranged baffle. In this way, the deposition rate of the vapor particles on the baffle is increased. It is understood that the cross section of the separation vessel does not have to be circular, but may also be square, rectangular or the like.

Preferably, the baffles are arranged substantially along a central axis, preferably of the separation vessel; Preferably, the baffles are arranged in discrete steps along the central axis. In this case, the baffles of successive separation stages are preferably arranged axially rotated relative to one another relative to a central axis. In this case, two guide plates and one spiral segment preferably each form a helix of a spiral staircase, with two guide plates each being able to be connected by means of a spiral segment. As a result, a flow path can lead along the central axis. This may result in a one-piece structure that is removable as a whole from the separation vessel and thus can be easily cleaned.

The device according to the invention for treating a coating with a vaporous particle stream applied to a surface of a substrate has a reaction chamber for receiving the substrate during the treatment process and at least one vapor source for generating the particle flow, wherein the vapor deposition device connected to or connectable to the reaction chamber serves to remove the vapor particles is provided from the reaction chamber. During vapor treatment of the substrate coating, a vapor source contained in the reaction chamber generates a flow of process vapor which acts on the substrate coating; During this treatment process, the passages between the reaction chamber and separation vessel are closed. After completion of the treatment process, the passages to the separation vessel are opened, the process steam penetrates into the separation vessel and is condensed there. In this way, the process steam can be quickly and inexpensively removed from the process chamber. Thereafter, the passages to the separation vessel can be closed again to prevent a return of the collected in the vapor separator process vapors in the process chamber. In this state, the process chamber (eg for removal of the treated substrate) can be vented and / or opened without the risk that process steam penetrates to the outside.

Furthermore, it is advantageous to provide a separating container with an inner container which can be taken out of the separating container together with any guide plate and / or baffles arranged in the separating container. The inner container and the guide plate and / or the guide plates can then be subjected to a cleaning, in the course of which the process material deposited on the inner wall of the inner container and the guide plate and / or the guide plates can be recovered and / or disposed of. Advantageously, the baffle and / or the baffles are attached to the inner container in such a way that it and / or these can be easily separated from the inner container and cleaned or replaced separately or can.

In order to achieve an efficient separation of the process steam in the separation tank, it is expedient to make the walls of the separation tank and / or the inner container of the separation tank and / or the baffle and / or the baffles coolable. By (local) reduction of the surface temperature in the separation tank, a fast and effective separation of the process steam in selected areas of the separation tank can be achieved.

For rapid dissipation of heat, which are introduced by deposited process particles in the wall of the separation vessel, the inner container and / or the baffle and / or the baffles, it is also appropriate to manufacture these components from a material having high thermal conductivity, the is not attacked by the conditions of the procedure. Suitable metallic materials are steel, brass, aluminum, nickel or copper. On the surface and metallic layers, such as nickel, may be applied. In the case of steel stainless steels are preferred, such. B. austenitic duplex steel TK 1.4462.

Other preferred materials are nickel plated copper and steel.

Furthermore, it should be ensured that the process vapors precipitate in an easily cleaned or exchanged area of the separation vessel; In particular, it should be avoided that the process vapors already deposit in the inlet channel of the separation vessel and / or in the region of the passages to the reaction chamber. For this purpose, these areas are advantageously provided with a heater, in particular wall heating, with which these areas are heated and can be heated to a temperature which is above the condensation temperature.

The surfaces of the separation vessel, the inner container and / or the baffle and / or the baffles, which are exposed to the process steam, are advantageously made of a material having a high chemical stability to the process steam. In a vapor separator in which a selenium-containing vapor is to be separated, it is expedient, for example, to coat the inner surfaces exposed to the process steam with nickel, wherein it has proved to be particularly advantageous to apply a plurality of nickel layers to these inner surfaces by means of a galvanic process.

The treatment device according to the invention comprises a reaction chamber and a vapor deposition device, which can be connected to this reaction chamber and is shown above, with the aid of which the process vapors can be removed from the reaction chamber.

In the following the invention will be explained in more detail with reference to two embodiments illustrated in the figures. Showing:

1 shows a schematic sectional view through a device according to the invention for treating a coated substrate with a particle vapor, the device comprising a vapor deposition device for separating excess vapor particles after the treatment;

Fig. 2 is a schematic sectional view through the Dampfabscheidevorrichtung the

Fig. 1;

3a shows a sectional view through an alternative embodiment of the Dampfabscheidevorrichtung;

FIG. 3b is a detail view of the spirally arranged baffles of FIG. 3a; FIG. Fig. 4 is a sectional view of a separation vessel arranged in a spiral

baffles;

Fig. 5 is a plan view of an inner container of a separation vessel;

6a is a sectional view through a Dampfabscheidevorrichtung according to the

Embodiment of Fig. 3a;

Fig. 6b is a plan view of the inner container of Fig. 4;

Fig. 6c is an oblique view of a helical unit.

In the drawings, corresponding elements are denoted by the same reference numerals. The drawings illustrate a schematic embodiment and do not represent specific parameters of the invention. Furthermore, the drawings are merely illustrative of an advantageous embodiment of the invention and should not be interpreted in such a way as to limit the scope of the invention. Same or similar objects are provided with the same reference numerals.

FIG. 1 shows a schematic sectional view of a device 1 for carrying out a surface treatment of a substrate, as can be used, for example, in the production of a 1-III-VI ₂ thin-film layer on a surface 21 of a substrate 20. The substrate 20 may be in particular a glass sheet or a plastic film. The substrate 20 is provided with a thin layer 22 of Cu, In and Ga in a predefined stoichiometric composition, a so-called CIG alloy, into which the particles of an element of group VI, in particular selenium and / or sulfur, to be integrated.

The device 1 comprises a reaction chamber 2, in whose interior space 3 at least one vapor source 4 is arranged, preferably a plurality of vapor sources 4, which produce particles of a group VI element, in particular selenium and / or sulfur or selenium and / or hydrogen sulphide. These vaporous particles are identified by reference numeral 23 in FIG. The vapor particles 23 move through the interior 3 of the processing chamber 2 and react with the layer 22 of CIG alloy deposited on the substrate 20 to produce an I-III-VI ₂ thin film layer of the desired stoichiometric composition. The process can be carried out under a protective gas, under reduced pressure or in vacuum, for which reason ports 2 for a vacuum pump 26 are provided in the wall 6 of the processing chamber 2.

The substrate 20 is moved by means of a conveying device 30 in a feed direction 13 through the vapor source 4 generated by the stream of vaporous particles 23, wherein the vapor source 4 facing surface 21 of the substrate 20 and the one thereon Layer 22 is exposed to the particle stream 23. The feed direction 13 of the conveying device 30 is arranged perpendicular to the plane of the drawing in the sectional view of FIG.

If the steam treatment of the substrate coating 22 is completed, the excess steam particles 23 must be removed from the reaction chamber 2 as quickly and thoroughly as possible. To achieve this, a Dampfabscheidevorrichtung 7, which can also be referred to as a vapor separator 7, provided with a separating vessel 9, which is flanged by a closable passage 8 to the reaction space 2. The vapor separation device 7 is integrated in the device 1 in such a way that the separation of the vapor or of the vapor mixture takes place only after the entry into the separation vessel 9. For this purpose, a feed line 8a can be heated, so that this area of the feed line 8a can be maintained at a temperature above the condensation temperature of the vapor particles 23. Furthermore, the steam or the vapor mixture is passed into the separation vessel 9 at low speed. After the steam particles 23 have been deposited as completely as possible in the vapor separation device 7, the residual gas can be vented through an outlet 28a in the outer space. Alternatively, the residual gas may be returned to the reaction chamber 2 through a return passage 28b.

FIG. 2 shows a detailed representation of the vapor separation device 7 with the separation vessel 9 of FIG. 1. The separation vessel 9 has the feed line 8a, also referred to as inlet channel 8a, for entry of the vapor or vapor mixture to be separated (arrow 24a shows the direction from which the vapor mixture enters the separation chamber 9 occurs) and the outlet or outlet channel 28a for discharging the residual gas (arrow 24b). The inlet channel 8a is provided with a wall heater 18, with the aid of which the inlet channel 8a can be heated so that no vapor particles 23 settle in this region of the vapor separator 7. The separating vessel 9 contains an inner container 10, which is displaceably mounted in the separating vessel 9 and can be removed from the separating vessel 9 via a closable opening 9a arranged at the end in the separating vessel 9. Inside the separation vessel 9 there are several separation stages 11, which are separated by baffles 12 from each other. Furthermore, the separation tank 9 has at least one flow path between the separation steps 11, so that the inlet channel 8a and the outlet channel 28a are fluidly connected. The baffles 12 are shaped or arranged in such a way that they abruptly dissolve the continuous flow of the penetrating into the Dampfabscheidevorrichtung 7 steam particles 23, so that in the interior of the separation vessel 9, a turbulent flow is formed. In this case, the flow paths or a flow channel through the separation stages 11 are designed such that, despite the intensive changes in the flow form and the flow velocity of the vapor or vapor mixture, no relevant pressure increases can occur. The walls 14 of the separation vessel 9 can be cooled by means of a cooling device 15 to a temperature which is substantially lower than the temperature of the vapor or vapor mixture to be deposited. To ensure this, the walls 1 may be provided, for example, with inner channels 16 through which a coolant circulates. Between the walls 14 of the separation vessel 9, the inner container 10 and the baffles 12 is a high thermal conductivity, so that the inner container 10 and the baffles 12 are substantially cooler than the entering into the separating vessel 9 steam particles 23. This ensures that the vapor particles 23 condense on the inner walls 10a of the inner container 10 and the baffles 12.

The baffles 12 are attached to the inner container 10, which is displaceably mounted in the separating container 9, so that they are removed together with the inner container 10 from the interior of the separating container 9 (arrow 9b) and can be fed to a cleaning station, in which the inner container 10 and the baffles 12 can be cleaned from the deposited vapor particles 23.

Figures 3a and 3b show an alternative embodiment of a separation vessel 9 'with baffles 12', which are arranged spirally about a central axis. The baffles 12 'are formed like a circle segment, and have a reduced area compared to a full circle with a recess; see. below Figure 6c.

The design of the guide plates 12 'causes a laminar flow of the steam particles 23 penetrating into the separating vessel 9' to dissolve abruptly, so that a turbulent flow arises in the interior of the separating vessel 9 '. At the same time ensures the helical arrangement of the baffles 12 'that despite the intense changes in the flow shape and the flow velocity of the vapor or vapor mixture no significant pressure increases occur. By the successive turns of the helix shape of the baffles 12 'a plurality of separation steps 11' are formed. On the outer edge of the baffles 12 ', a spiral cooling coil 16' is arranged, which is flowed through by a cooling medium and by means of which (with the aid of a cooling device not shown in FIG. 3a) the baffles 12 'can be cooled in order to ensure efficient separation of the vapor or vapor To reach steam mixture. The baffles 12 'and the cooling coil 16' form part of an inner container 10 ', which is slidably mounted in the separation vessel 9' and can be removed via a closable opening 9a 'from the separation vessel 9'. The baffles 12 'and the cooling coil 16' can thus be removed together from the interior 10 'of the separating vessel 9' and fed to a cleaning station, in which the guide plates 12 'can be cleaned from the separated vapor particles 23. In order to facilitate the cleaning of the inner container 10, 10 'and the baffles 12, 12' and to ensure a long life, the materials used for this purpose are selected accordingly. In particular, an inner wall 10a, 10'a of the inner container 10, 10 'facing the flow of the steam particles 23 and the guide plates 12, 12' can be provided with suitable surface coatings.

In an advantageous embodiment, the inner container 10, 10 'and the guide plates 12, 12' made of copper or a copper alloy and provided with a multiple coating of nickel. Such nickel layers are stable to selenium. Conveniently, three to four nickel layers are applied, each of which is about 40 μΐτι thick. The nickel layers can be applied in particular by electroplating; Such nickel layers have a low porosity, so that it can be ensured that no continuous defects occur and the exposed to the process steam surfaces are effectively protected against this vapor. As materials for the Innenbehäiter 10, 10 'and the guide plates 12, 12' or at least portions of the inner container 10, 10 'and the baffles 12, 12' may also be provided steel, brass, aluminum or nickel.

FIG. 4 shows a sectional view of the vapor separation device 7 with the separation vessel 9 'of FIG. 3a, which comprises the inner container 10'. The separation tank 9 'has a wall 34, which is configured here in a cylindrical shape, and a bottom 34a. Opposite to the bottom 34a, the opening 9'a is arranged and circumferentially an annular flange 35a. The inner container 10 'is connected to a flange 35. By means of the flange 35 and the associated annular flange 35a, the inner container 10 'with the separating vessel 9, 9' are connected and secured thereto. This is preferably done with screws 36, which are guided through the recesses 37 and preferably in the separation vessel 9, 9 'frontally arranged blind holes 38 are not shown with threaded portions 8) rotated so that a detachable connection is formed and the inner container 10' stable with the separation vessel 9, 9 'is connected. The flange 35 is preferably a vacuum flange, such as a KF flange or CF flange. If the flange 35 is detached or separated from the separation vessel 9, 9 ', the opening 9a can be seen. On the flange 35, the passage 8, 8 'and a feed line 39 and a discharge line 40 are arranged, the latter being respectively connected to the cooling coils 16'. The supply line 39 is connected to the cooling coil 16 'which is arranged closest to the flange 35, and the discharge line 40 is connected to the last cooling coil 16' of the cooling coil stack 17 formed by the arranged cooling coils 16 '. The coolant passes through the feed line 39 into the cooling coils 16 'and leaves the cooling coil stack 17 through the discharge line 40. Preferably, a coolant supply vessel is located between the supply line 39 and the discharge line 40 outside the flange 35 (not shown), in which the coolant is stored. Thus, the coolant circuit may be a closed coolant circuit. But it can also be provided that the coolant is generated and then after it has passed through the cooling coils 16 'is discharged through the discharge line 40 to the environment or a collecting container.

At least one connecting device 41, which is designed here as a plate 41, is arranged on the flange 35. The plate 41 is preferably connected to the cooling coil 16 'which is arranged closest to the flange 35 and / or to the guide plate 12' which is arranged closest to the flange 35, preferably welded or soldered thereto. Thus, the sheet 41 connects the inner container 10 'stably on the flange 35. Preferably, two connecting means 41 are provided, which are arranged opposite to the flange 35. However, it is also possible for three or four uniformly spaced connecting devices 41 to be provided. The connecting device 41 may also be integrally formed as a circular plate 41.

The guide plates 12 'are in thermal contact with the cooling coils 16', preferably they are soldered or welded to these. When the cooling coils 16 'and the baffles 12' are made of copper or a copper alloy, they are soldered to provide good thermal contact. The baffles 12 'are arranged helically with discrete steps. Thus, the arrangement of the baffles 12 'in the form of a spiral staircase, wherein the baffles 12' form the steps. In each case between two baffles 12 'is a separation stage 11' is formed. Here, the baffles 12 'successive deposition steps 11' relative to a central axis 42 are axially rotated relative to each other. The baffles 12 'are substantially perpendicular to the central axis 42 of the separation vessel 9' and arranged along it. In each case two baffles 12 'are connected by means of a spiral segment 43. As a result, form the guide plates 12 'together with the spiral segments 43, the spiral staircase. Preferably, the baffles 12 'and the spiral segments 43 are made in one piece in the assembled state and thus form a helix or spiral. The baffles 12 'are in this case formed as substantially flat and mutually parallel surfaces 44, which are arranged substantially perpendicular to and along the central axis 42. Characterized in that the surfaces 44 of successive baffles 12 'offset or axially twisted to each other, the particulate vapor 23 can be converted from a laminar flow state into a turbulent flow state and flow through the baffles 12', wherein at the cooled by the cooling medium surfaces 44th Adsorb the vapor particles 23 and thus can be removed from the vapor mixture. The cooling coil 16 'with its individual cooling channels 16' follows the spiral course of the baffles 12 'and the spiral segments 43. The cooling coil stack 17 is thus also arranged spirally. The separation vessel 9 'also has brackets 45, by means of which the separation vessel 9' can be attached to the reaction chamber 2. Furthermore, the bagging container 9 'has the outlet or outlet channel 28a.

Figure 5 shows the inner container 10 'in an oblique plan view along the central axis 42. The inner container 10', at least comprising the baffles 12 ', the interposed spiral segments 43 and the cooling coils 16', is arranged on the flange 35 and by means of the connecting device 41 at attached to this. The connecting device 41 is formed in this embodiment as a cylindrical plate 41. At the connecting device 41 of the cooling coil stack 17 is arranged with the cooling coils 16 '. Arranged on the flange 35 is the outlet 40, which is connected to the cooling coil 16 'located farthest away from the flange 35. Shown are four baffles 12 ', wherein the flat surface 44 of the uppermost baffle 12' is completely visible. The underlying baffles 12 'are only partially visible, as these offset or axially twisted to each other along the central axis 42 are arranged. The surface 44 of the baffle 12 'is typically the size of a half circle segment, but may also be smaller. The baffles 12 'are typically arranged axially rotated between 20 ° and 60 ° to each other. Recognizable are five separation stages 11 ', each separated by a baffle 12'. It can be clearly seen here that the guide plates 12 'are arranged helically or spirally around the central axis 42 along the central axis 42, wherein the central axis 42 is arranged substantially parallel to the coolant channel 46 running centrally in the inner container 10'.

FIG. 6a shows the inner container 10 'of FIGS. 3a, 3b, 4 and FIG. 5 with ten separation stages 1 1' as a sectional illustration. In each case two baffles 12 'and a spiral segment 43 form a helix 47 or helical unit 47 of the spiral staircase. It can be seen that in the sectional drawing the baffles 12 'are shown as larger or smaller areas according to their respective projection. For a more detailed explanation of the individual components, reference is made to the description of FIGS. 3 a, 3 b, 4 and 5.

FIG. 6b shows the vapor deposition device 7 of FIG. 5 as a section perpendicular to the central axis 42. The observer sees four surfaces 44 of baffles 12 'as well as a cooling coil 16' and the flange 35.

FIG. 6c shows a helix 47 consisting of two baffles 12 'and the spiral segment 43 arranged therebetween. The surface 44 of the uppermost baffle 12' facing the viewer is in this embodiment an approximately semicircular circle segment with one reaching up to a central region of the circle segment Recess 48 formed. Through the recess 48 when installed in the inner container 10 'the central Coolant line 46 out. It can be seen that the pitch of the spiral is realized by the Sp segment 43 and the baffles 12 'are substantially planar and are arranged substantially parallel to each other.

List of Reference Devices

Reaction chamber, processing chamber

inner space

Steamfont

wall

Steam separator, steam trap passage

a supply line

separating vessel

'Separator container

a closable opening

a 'closable opening

b arrow

0 inner container

0 'inner container

0 a inner walls of the inner container 10th

0a 'inner walls of the inner container 10th

1 separation steps

1 'separation stages

2 baffle

2 'baffle

3 feed direction

4 walls of 9, 9 '

5 cooling device

6 channels of 15

6 'cooling coil or channels of the cooling coil

7 cooling coil stack from 16, 16 '

8 wall heating

0 substrate

1 surface of the substrate 20

2 layer, substrate coating

3 vapor particles, vaporous particles

4a arrow

4b arrow

5 connections vacuum pump

a outlet, outlet channel

b return channel

Conveyor

Wall of the separation vessel 9'a bottom of the separation vessel 9 '

flange

a ring flange

screw

Recess, blind hole

Thread in the blind hole or the recess 37 inlet

outlet

Connecting device, sheet metal

central axis

coil segment

Surface of the baffle 12 '

bracket

central cooling channel, central coolant line Wendel, helix unit

Recess centered on the baffle 12 '

Claims

claims

1. vapor separation device (7) with a separation vessel (9, 9 ') for removing vapor particles (23) from a reaction chamber (2), the separation vessel (9, 9') having at least one flow path and a plurality of separation steps (11, 11 ') characterized by baffles (12, 12 ') are separated from each other, characterized in that the guide plates (12, 12') are arranged helically in discrete steps helical.

2. vapor deposition apparatus (7) according to claim 1,

characterized in that the baffles (12, 12 ') are arranged substantially along a central axis (42).

A vapor deposition apparatus (7) according to claim 1 or 2,

characterized in that the baffles (12, 12 ') successive Abscheidestufen (11, 11'), relative to the central axis (42), are mutually axially rotated.

4. vapor deposition device (7) according to one of claims 1 to 3,

characterized in that in each case two guide plates (12, 12 ') by means of a spiral segment (43) are connected.

5. vapor deposition device (7) according to claim 4,

characterized in that in each case two baffles (12, 12 ') and a spiral segment (43) form a helix (47) of a spiral staircase.

6. vapor deposition device (7) according to one of claims 1 to 5,

characterized in that the separating vessel (9, 9 ') comprises an inner container (10, 10') which can be opened out of the separating vessel (9, 9 ') by a closable opening (9a, 9'a) of the separating vessel (9, 9'). ) is removable.

7. vapor deposition apparatus (7) according to claim 6,

characterized in that the inner container (10, 10 ') and / or the baffles (12, 12') and / or the spiral segment (43) at least partially made of steel, brass, aluminum, nickel or copper.

8. vapor deposition device (7) according to one of claims 6 or 7, characterized in that the inner container (10, 10 ') and / or the guide plates (12, 12') and / or the spiral segment (43) are at least partially provided with a nickel coating.

A vapor deposition apparatus (7) according to any one of claims 1 to 8,

characterized in that the walls (14) of the separation vessel (9, 9 ') are coolable.

10. vapor deposition device (7) according to any one of claims 1 to 9,

characterized in that the inner container (10, 10 ') and / or the guide plates (12, 12') and / or the spiral segment (43) are coolable.

11. vapor deposition device (7) according to one of claims 1 to 10,

characterized in that the guide plates (12, 12 ') and / or the spiral segment (43) with a spiral-shaped cooling coil (16') is provided.

12. vapor deposition device (7) according to one of the preceding claims,

characterized in that an inlet channel (8a) of the separating vessel (9, 9 ') is heated.

13. Apparatus (1) for treating a coating (22) applied to a surface (21) of a substrate (20) with a vaporous particle stream (23), comprising a reaction chamber (2) for receiving the substrate (20) during the treatment process and with at least one vapor source (4) for generating the particle stream (23), characterized by a vapor separation device (7) according to one of claims 1 to 12 connected to the reaction chamber (2) for removing the vapor particles (23) from the reaction chamber (2). ,