WO2012162901A1 - Procédé de fabrication de feuille de cellules solaires en silicium cristallin à contact arrière - Google Patents

Procédé de fabrication de feuille de cellules solaires en silicium cristallin à contact arrière Download PDF

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Publication number
WO2012162901A1
WO2012162901A1 PCT/CN2011/075415 CN2011075415W WO2012162901A1 WO 2012162901 A1 WO2012162901 A1 WO 2012162901A1 CN 2011075415 W CN2011075415 W CN 2011075415W WO 2012162901 A1 WO2012162901 A1 WO 2012162901A1
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WIPO (PCT)
Prior art keywords
etching
semiconductor substrate
silicon wafer
solar cell
crystalline silicon
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PCT/CN2011/075415
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English (en)
Chinese (zh)
Inventor
章灵军
张凤
吴坚
王栩生
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苏州阿特斯阳光电力科技有限公司
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Priority to JP2013540219A priority Critical patent/JP5817046B2/ja
Publication of WO2012162901A1 publication Critical patent/WO2012162901A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H01L31/02245—Electrode arrangements specially adapted for back-contact solar cells for metallisation wrap-through [MWT] type solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to the field of solar cell technology, and in particular to a method for manufacturing a back contact crystalline silicon solar cell.
  • a solar cell also called a photovoltaic cell, is a semiconductor device that converts the solar light energy directly into electrical energy. Because it is a green product, it does not cause environmental pollution, and it is a renewable resource. Therefore, in today's energy shortage, solar cells are a new type of energy with broad development prospects. At present, more than 80% of solar cells are made of crystalline silicon materials.
  • the preparation of high-efficiency crystalline silicon solar cells is of great significance for large-scale utilization of solar power, because the light-receiving surface of back-contact crystalline silicon solar cells does not have The main grid line, the positive pole and the negative pole are all located on the backlight surface of the cell sheet, which greatly reduces the shading rate of the light-receiving surface grid line and improves the conversion efficiency of the cell sheet. Therefore, the back-contact crystalline silicon solar cell has become a hot spot for solar cell research and development. .
  • Opening Use a laser to open at least one conductive hole in the silicon.
  • Texturing The surface of the original bright silicon wafer (including the front and back) is formed into a convex and concave structure by chemical reaction to prolong the propagation path of light on the surface, thereby improving the absorption of light by the solar cell.
  • the P-type silicon wafer becomes an N-type electrode on the surface after diffusion and the inner wall of the conductive hole, or the N-type silicon wafer becomes a P-type electrode on the surface after diffusion and the inner wall of the conductive hole, forming a PN junction, so that the silicon wafer Has a photovoltaic effect.
  • Peripheral etching Etching the edge of the silicon wafer.
  • the doped glass layer formed when the surface of the silicon wafer is diffused is removed.
  • Coating The anti-reflection film is coated on the surface of the silicon wafer.
  • silicon nitride film and titanium oxide film which mainly play the role of anti-reflection and passivation.
  • Print electrode and electric field Print the back electrode, front electrode and back surface electric field onto the silicon wafer.
  • Laser Isolation The purpose of this step is to remove the conductive layer formed between the back side of the silicon wafer and the conductive via that is short-circuited between the P-N junction during diffusion bonding.
  • a conductive layer that short-circuits the PN junction is formed between the backlight surface of the solar cell and the conductive hole, which greatly reduces the parallel resistance of the cell, and is prone to leakage.
  • the conductive layer between the PN junctions needs to be removed by a laser isolation step.
  • the use of laser isolation may cause a new leakage path for the solar cell, resulting in a decrease in the performance of the cell.
  • the laser damage to the cell itself is relatively large, and debris may occur during the laser isolation process, which increases the production cost of the cell.
  • an embodiment of the present invention provides a method for manufacturing a back contact crystalline silicon solar cell sheet, which removes an emitter junction formed on a back surface of the silicon wafer by diffusion, that is, a PN between the backlight surface and the conductive hole.
  • the junction conductive layer is removed, so that the obtained solar cell achieves PN junction insulation.
  • a method for manufacturing a back contact crystalline silicon solar cell comprises etching an open-cell, a texturing, and a diffused semiconductor substrate, and processing the semiconductor substrate after etching to obtain a back-contact crystalline silicon solar cell , wherein: the etching comprises:
  • the light-receiving surface edge and the backlight surface of the semiconductor substrate are etched.
  • the etching further comprises:
  • the via holes of the semiconductor substrate are etched.
  • etching the edge of the light-receiving surface of the semiconductor substrate further comprises: etching the side surface of the semiconductor substrate and the edge of the via hole.
  • the process of etching the through holes of the semiconductor substrate is:
  • the etching is: etching with a chemical agent.
  • the chemical agent is: a chemical liquid, a chemical etching slurry or a plasma gas.
  • the etching process using a chemical liquid is:
  • the backlight surface of the semiconductor substrate is in full contact with the chemical liquid, and the side surface and the edge portion of the through hole are in contact with the chemical liquid.
  • the etching using the chemical etching slurry is:
  • a chemical etching paste is printed on the edge of the light receiving surface of the semiconductor substrate and on the backlight surface.
  • the etching process using a plasma gas is:
  • the through holes, side faces, and backlight faces of the semiconductor substrate are in direct contact with the plasma gas.
  • the silicon wafer is processed after etching to:
  • An electrode and a back electric field are prepared on the semiconductor substrate after coating to obtain a back contact crystalline silicon solar cell sheet.
  • the method for manufacturing the back contact crystalline silicon solar cell sheet provided by the embodiment of the invention etches the emitter junction formed on the back surface of the silicon wafer while etching the edge of the light receiving surface of the silicon wafer. After being removed, there is no short-circuited conductive layer between the backlight surface of the obtained solar cell sheet and the conductive hole, that is, the PN junction between the backlight surface and the conductive hole is disconnected, thereby improving the parallel resistance and conversion efficiency of the battery.
  • the method reduces the laser isolation process, thereby reducing the risk of leakage of the battery and the fragmentation rate of the battery due to laser isolation.
  • the laser isolation process is reduced, the process is more compact, and the equipment cost is reduced, which is advantageous for large-scale industrial production.
  • Embodiment 1 is a flow chart of a method for manufacturing a back contact crystalline silicon solar cell sheet according to Embodiment 1;
  • FIG. 2 is a schematic structural view of a silicon wafer after opening according to the first embodiment
  • FIG. 3 is a schematic structural view of a silicon wafer after being subjected to the invention according to the first embodiment
  • FIG. 4 is a schematic structural view of a silicon wafer after diffusion according to Embodiment 1;
  • FIG. 5 is a schematic structural diagram of an etched silicon wafer according to Embodiment 1;
  • FIG. 5 is a schematic structural diagram of an etched silicon wafer according to Embodiment 1;
  • FIG. 6 is a schematic structural view of a silicon wafer after plating according to the first embodiment
  • FIG. 7 is a schematic structural view of a silicon wafer after screen printing according to Embodiment 1;
  • FIG. 8 is a flow chart of a method for manufacturing a back contact crystalline silicon solar cell according to Embodiment 2;
  • FIG. 9 is a schematic structural view of an etched silicon wafer provided in the second embodiment.
  • FIG. 10 is a schematic structural view of a silicon wafer after screen printing according to the second embodiment
  • FIG. 11 is a flow chart of a method for manufacturing a back contact crystalline silicon solar cell according to the third embodiment
  • FIG. 12 is a schematic structural view of a silicon wafer after etching according to Embodiment 3;
  • FIG. 13 is a schematic structural view of a silicon wafer after screen printing according to the third embodiment.
  • the present invention proposes a solution.
  • the basic idea is: after the semiconductor substrate is diffused, the emitter junction formed on the backlight surface is removed by etching, that is, the PN junction between the backlight surface and the conductive hole. The conductive layer is removed to achieve PN junction insulation.
  • Embodiment 1 is a diagrammatic representation of Embodiment 1:
  • FIG. 1 is a flowchart of a method for manufacturing a back contact crystalline silicon solar cell according to Embodiment 1. As shown in FIG. 1, the method includes the following steps:
  • Step S101 opening a hole in the silicon wafer
  • the laser is used to open at least one through hole on the silicon wafer, and the electrode can be disposed in the through hole to guide the current of the light receiving surface of the battery to the backlight surface of the battery sheet, so that the positive and negative electrodes of the battery are located in the battery.
  • the back side of the sheet reduces the shading rate of the front grid lines.
  • the wavelength of the laser used for the opening may be 1064 nm, 1030 nm, 532 nm or 355 nm.
  • the structure diagram of the silicon wafer after opening is shown in Fig. 2. In the figure, 1 is a silicon wafer, 2 is a light receiving surface, 3 is a back surface, 4 is a through hole, and 5 is a through hole inner wall.
  • Step S102 performing texturing on the surface of the silicon wafer to form a surface structure
  • the selection of the texturing is performed on both sides of the silicon wafer 1.
  • the purpose of the texturing is to form a convex and concave structure on the surface of the original bright silicon wafer by chemical reaction to extend the light on the surface thereof. The propagation path, thereby increasing the absorption of light by the silicon wafer.
  • the structure of the silicon wafer after the pile is shown in Fig. 3, and the figure 6 is the pile surface. Further, it is necessary to remove the oil stain and metal impurities on the surface of the silicon wafer 1 before the fleece, and to remove the cut damage layer on the surface of the silicon wafer 1.
  • Step S103 diffusing a surface of the silicon wafer to form a P-N junction
  • FIG. 4 is a schematic structural view of the silicon wafer after diffusion
  • 7 is an N-type or P-type emission.
  • Step S104 etching the edge of the light receiving surface of the silicon wafer and the backlight surface
  • the edge of the light-receiving surface of the silicon wafer 1 and the backlight surface are etched. As shown in FIG. 5, 8 is an etched trench formed at the edge of the light-receiving surface after etching, and the purpose is to form the edge of the silicon wafer 1 when the diffusion is formed. A conductive layer that shorts both ends of the PN junction.
  • the backlight surface of the silicon wafer 1 is etched for the purpose of removing the emitter junction formed on the backlight surface of the silicon wafer 1 during diffusion bonding.
  • a chemical etching paste when etching, can be printed on the edge of the light receiving surface of the silicon wafer 1 and the backlight surface, and when the chemical etching paste is printed on the edge of the light receiving surface of the silicon wafer 1, the silicon is selected.
  • the chemical etching slurry is printed on the entire backlight surface of the film i, and the chemical etching of the slurry is performed, the silicon wafer 1 is dried at room temperature for 3 minutes, and finally, the etching is performed by using an aqueous solution of 30 ° C to complete the etching.
  • Step S105 removing the doped glass layer on the silicon wafer
  • the doped glass layer formed on the surface of the silicon wafer 1 during diffusion can be removed.
  • Step S106 performing coating on the light receiving surface of the silicon wafer
  • the coating is performed on the light-receiving surface 2 of the silicon wafer 1, and the film functions to reduce the reflection of sunlight and to utilize solar energy to the utmost extent.
  • an antireflection film is formed on the silicon wafer 1 by PECVD (Plasma Enhanced Chemical Vapor Deposition). As shown in Fig. 6, 9 is an anti-reflection film.
  • PECVD is only one embodiment of the present invention and should not be construed as limiting the invention. In other embodiments of the present invention, the coating method may also employ other methods well known to those skilled in the art.
  • Step S107 printing an electrode and a back electric field on the coated silicon wafer;
  • the backlight surface electrode, the light-receiving surface electrode, and the backlight surface may be electrically printed on the silicon wafer 1 by screen printing.
  • Fig. 7 is a schematic view showing the structure of a silicon wafer after screen printing.
  • 10 is a back surface electrode
  • 11 is a back surface electrode
  • 12 is a backlight surface electric field
  • 13 is a light receiving surface electrode
  • 14 is a hole electrode.
  • the light-receiving surface electrode 13, the hole electrode 14, and the hole back electrode 10 may be separately formed.
  • the three electrodes may be of the same material or different materials.
  • the electrode and the electric field may be attached to the silicon wafer 1 by vacuum evaporation, sputtering or the like.
  • Step 108 Sintering.
  • an alloy By sintering, an alloy can be formed between the printed light-receiving surface electrode 13, the hole electrode 14, the hole back electrode 10, the backlight surface electrode 11, the backlight surface electric field 12, and the silicon wafer 1, so that an ohmic contact is formed between the electrode and the silicon wafer.
  • the preparation of electrodes and electric fields can be achieved by screen printing and sintering.
  • the method for manufacturing the back contact crystalline silicon solar cell provided by the embodiment of the present invention etches the emitter junction formed on the back surface of the silicon wafer while etching the edge of the light receiving surface of the silicon wafer. Removed, so that there is no short-circuited conductive layer between the backlight surface of the obtained solar cell and the conductive hole, that is, the PN junction between the backlight surface and the conductive hole is broken, and the emitter junction in the conductive hole is well insulated. , improve the parallel resistance and conversion efficiency of the battery.
  • Embodiment 2 Compared with the prior art, the method reduces the laser isolation process, thereby reducing the risk of leakage of the battery and the fragmentation rate of the battery due to laser isolation. In addition, the laser isolation process is reduced, the process is more compact, and the equipment cost is reduced, which is advantageous for large-scale industrial production.
  • Embodiment 2 :
  • FIG. 8 is a flowchart of a method for manufacturing a back contact crystalline silicon solar cell according to Embodiment 2. As shown in FIG. 8, the method includes the following steps:
  • the steps 201 to 203 are the same as the steps 101 to 103 in the first embodiment, and details are not described herein again.
  • Step S204 etching the side surface of the silicon wafer, the backlight surface, and all the through holes;
  • FIG. 9 is a schematic view showing the structure of the etched silicon wafer. As shown in FIG. 9, after the etching, there is no emitter junction on the inner wall 5 and the side surface of the through hole.
  • the entire surface of the entire surface of the silicon wafer 1, the entire backlight surface, and all the through holes can be completely in contact with the chemical liquid during the etching.
  • the method can completely immerse all sides of the silicon wafer, the entire backlight surface and all the through holes by using HF (hydrogen fluoride) solution, or flush all sides of the silicon wafer, the entire backlight surface and all the through holes by using the HF (hydrogen fluoride) solution.
  • the pores, or by means of spraying, are preferably etched in this embodiment by means of wetting.
  • plasma gas can also be used to etch all sides of the silicon wafer 1, the entire backlight surface and all the via holes for 15 min, wherein the flow rate of SF6 in the plasma gas is 200 sccm, the flow rate of 02 is 30 sccm, and the flow rate of N2.
  • the pressure is chosen to be 50 Pa and the glow power is chosen to be 700 W.
  • FIG. 10 is a schematic structural diagram of the silicon wafer after screen printing according to the embodiment of the present invention. There is no emitter junction on the inner wall of the through hole.
  • Embodiment 3 is a schematic structural diagram of the silicon wafer after screen printing according to the embodiment of the present invention. There is no emitter junction on the inner wall of the through hole.
  • FIG. 11 is a flowchart of a method for manufacturing a back contact crystalline silicon solar battery chip according to the second embodiment. As shown in FIG. 11, the method includes the following steps:
  • the steps 301 to 303 are the same as the steps 201 to 203 in the second embodiment, and details are not described herein again.
  • Step S304 etching the side surface of the silicon wafer, the entire backlight surface, and a part of the through holes.
  • FIG. 12 is a schematic structural view of the etched silicon wafer. As shown in FIG. 12, when etching the through hole, selective etching is performed. A section of the through hole in the direction of the axis of the through hole, so that after etching, there is a local emission junction on the inner wall 5 of the through hole.
  • the side surface of the silicon wafer the entire surface of all the sides of the silicon wafer may be etched, or part of the surface of all the side surfaces may be etched.
  • the backlight surface when etching, can be immersed in the chemical liquid to a certain depth, so that part of the side surface and part of the through hole can be etched.
  • FIG. 13 is a schematic structural diagram of the silicon wafer after screen printing according to an embodiment of the present invention. There is no emitter junction on the inner wall of the through hole.

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Abstract

L'invention concerne un procédé de fabrication d'une feuille de cellules solaires en silicium cristallin à contact arrière. Le procédé consiste : à former une interconnexion (4) sur une plaquette semi-conductrice (1) ; à effectuer une texturation et des traitements de diffusion sur des surfaces (2, 3) de la plaquette semi-conductrice ; à graver la plaquette semi-conductrice diffusée et à effectuer les traitements suivants, pour obtenir la feuille de cellules solaires en silicium cristallin à contact arrière, la gravure consistant à graver la surface de rétroéclairage (3) et l'arête de la surface réceptrice de lumière (2) de la plaquette semi-conductrice. Dans le procédé, l'arête de la surface réceptrice de lumière de la plaquette et la jonction d'émetteur formée par diffusion sur la surface de rétroéclairage de la plaquette sont retirées par gravure en même temps. Il n'y a donc pas de couche conductrice de court-circuit entre la surface de rétroéclairage et l'interconnexion conductrice de la feuille de cellules solaires. Comparé à l'état de la technique, le procédé évite le traitement d'isolation au laser et réduit alors le risque de fuite et le taux de rupture de la feuille de cellules.
PCT/CN2011/075415 2011-05-27 2011-06-07 Procédé de fabrication de feuille de cellules solaires en silicium cristallin à contact arrière WO2012162901A1 (fr)

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JP2013540219A JP5817046B2 (ja) 2011-05-27 2011-06-07 背面接触式結晶シリコン太陽電池セルの製造方法

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CN201110141250.3 2011-05-27
CN201110141250.3A CN102800741B (zh) 2011-05-27 2011-05-27 背接触晶体硅太阳能电池片制造方法

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