WO2012160862A1 - Cellule solaire et procédé de fabrication de celle-ci - Google Patents
Cellule solaire et procédé de fabrication de celle-ci Download PDFInfo
- Publication number
- WO2012160862A1 WO2012160862A1 PCT/JP2012/056732 JP2012056732W WO2012160862A1 WO 2012160862 A1 WO2012160862 A1 WO 2012160862A1 JP 2012056732 W JP2012056732 W JP 2012056732W WO 2012160862 A1 WO2012160862 A1 WO 2012160862A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- glass substrate
- solar cell
- scattering structure
- light scattering
- light
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 21
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000000758 substrate Substances 0.000 claims abstract description 178
- 239000011521 glass Substances 0.000 claims abstract description 174
- 238000000149 argon plasma sintering Methods 0.000 claims abstract description 103
- 238000010248 power generation Methods 0.000 claims abstract description 52
- 238000006243 chemical reaction Methods 0.000 claims abstract description 19
- 239000010409 thin film Substances 0.000 claims description 77
- 239000010408 film Substances 0.000 claims description 48
- 239000004065 semiconductor Substances 0.000 claims description 6
- 238000002834 transmittance Methods 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 5
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 2
- 230000002542 deteriorative effect Effects 0.000 abstract 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 17
- 238000010586 diagram Methods 0.000 description 15
- 230000007547 defect Effects 0.000 description 12
- 239000005357 flat glass Substances 0.000 description 8
- 239000011787 zinc oxide Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000001228 spectrum Methods 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 229910006404 SnO 2 Inorganic materials 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000005038 ethylene vinyl acetate Substances 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 3
- 239000003566 sealing material Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000009546 growth abnormality Effects 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000002648 laminated material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000005341 toughened glass Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
L'invention concerne une cellule solaire qui comporte un substrat de verre (1) sur le côté d'entrée de lumière d'une couche de génération d'énergie (4) qui réalise une conversion photoélectrique. Le substrat de verre (1) a, à l'intérieur de celui-ci, une structure de diffusion de lumière interne (2) qui est formée par convergence et rayonnement de faisceaux laser, et qui diffuse de la lumière entrée dans le substrat de verre (1), et le substrat de verre transmet de la lumière au côté couche de génération d'énergie (4), ladite lumière ayant été diffusée au moyen de la structure de diffusion de lumière interne (2). Par conséquent, on peut obtenir une cellule solaire qui empêche des caractéristiques de génération d'énergie de se détériorer en raison d'une structure qui diffuse la lumière, peut commander la teinte de couleur observée à partir de la surface du verre, et qui peut être fabriquée par de simples étapes à bas coût.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013516237A JPWO2012160862A1 (ja) | 2011-05-23 | 2012-03-15 | 太陽電池およびその製造方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011114860 | 2011-05-23 | ||
JP2011-114860 | 2011-05-23 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2012160862A1 true WO2012160862A1 (fr) | 2012-11-29 |
Family
ID=47216951
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2012/056732 WO2012160862A1 (fr) | 2011-05-23 | 2012-03-15 | Cellule solaire et procédé de fabrication de celle-ci |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPWO2012160862A1 (fr) |
WO (1) | WO2012160862A1 (fr) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017085750A (ja) * | 2015-10-27 | 2017-05-18 | 株式会社カネカ | 窓用太陽電池モジュール及び窓 |
JP2017151414A (ja) * | 2016-02-25 | 2017-08-31 | パナソニックIpマネジメント株式会社 | 表示装置とその製造方法及び製造装置 |
CN111129784A (zh) * | 2020-01-10 | 2020-05-08 | 南京航空航天大学 | 一种适用于太阳能电池阵的高透光率超宽带低散射超表面 |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05335610A (ja) * | 1992-03-03 | 1993-12-17 | Canon Inc | 光起電力装置 |
JPH1070294A (ja) * | 1996-08-28 | 1998-03-10 | Sharp Corp | 太陽電池用基板およびその製造方法 |
JP2001053315A (ja) * | 1999-05-31 | 2001-02-23 | Kanegafuchi Chem Ind Co Ltd | 太陽電池モジュールおよびその製造方法 |
JP2003110128A (ja) * | 2001-09-28 | 2003-04-11 | Sharp Corp | 薄膜太陽電池モジュール及びその製造方法 |
JP2004323252A (ja) * | 2003-04-21 | 2004-11-18 | Hideaki Fujita | 強化ガラスマーキング方法及び強化ガラス |
JP2005038681A (ja) * | 2003-07-18 | 2005-02-10 | Toyota Industries Corp | ボトムエミッション型発光素子形成用の透明基板及び当該透明基板を用いた発光デバイス |
JP2009060062A (ja) * | 2007-09-04 | 2009-03-19 | Ulvac Japan Ltd | 薄膜太陽電池およびその製造方法 |
JP2009231499A (ja) * | 2008-03-21 | 2009-10-08 | Mitsubishi Electric Corp | 光電変換装置 |
JP2009237136A (ja) * | 2008-03-26 | 2009-10-15 | Hoya Corp | 内部に散乱面を有する透明部材、及びそれらの製造方法、並びにこれを具備する撮像装置 |
WO2009143561A1 (fr) * | 2008-05-25 | 2009-12-03 | 3Gsolar Ltd | Amélioration optique pour dispositifs solaires |
JP2011515866A (ja) * | 2008-03-25 | 2011-05-19 | コーニング インコーポレイテッド | 太陽光発電用基板 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60148173A (ja) * | 1984-01-12 | 1985-08-05 | Seikosha Co Ltd | 色つき太陽電池 |
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2012
- 2012-03-15 WO PCT/JP2012/056732 patent/WO2012160862A1/fr active Application Filing
- 2012-03-15 JP JP2013516237A patent/JPWO2012160862A1/ja active Pending
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05335610A (ja) * | 1992-03-03 | 1993-12-17 | Canon Inc | 光起電力装置 |
JPH1070294A (ja) * | 1996-08-28 | 1998-03-10 | Sharp Corp | 太陽電池用基板およびその製造方法 |
JP2001053315A (ja) * | 1999-05-31 | 2001-02-23 | Kanegafuchi Chem Ind Co Ltd | 太陽電池モジュールおよびその製造方法 |
JP2003110128A (ja) * | 2001-09-28 | 2003-04-11 | Sharp Corp | 薄膜太陽電池モジュール及びその製造方法 |
JP2004323252A (ja) * | 2003-04-21 | 2004-11-18 | Hideaki Fujita | 強化ガラスマーキング方法及び強化ガラス |
JP2005038681A (ja) * | 2003-07-18 | 2005-02-10 | Toyota Industries Corp | ボトムエミッション型発光素子形成用の透明基板及び当該透明基板を用いた発光デバイス |
JP2009060062A (ja) * | 2007-09-04 | 2009-03-19 | Ulvac Japan Ltd | 薄膜太陽電池およびその製造方法 |
JP2009231499A (ja) * | 2008-03-21 | 2009-10-08 | Mitsubishi Electric Corp | 光電変換装置 |
JP2011515866A (ja) * | 2008-03-25 | 2011-05-19 | コーニング インコーポレイテッド | 太陽光発電用基板 |
JP2009237136A (ja) * | 2008-03-26 | 2009-10-15 | Hoya Corp | 内部に散乱面を有する透明部材、及びそれらの製造方法、並びにこれを具備する撮像装置 |
WO2009143561A1 (fr) * | 2008-05-25 | 2009-12-03 | 3Gsolar Ltd | Amélioration optique pour dispositifs solaires |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017085750A (ja) * | 2015-10-27 | 2017-05-18 | 株式会社カネカ | 窓用太陽電池モジュール及び窓 |
JP2017151414A (ja) * | 2016-02-25 | 2017-08-31 | パナソニックIpマネジメント株式会社 | 表示装置とその製造方法及び製造装置 |
CN111129784A (zh) * | 2020-01-10 | 2020-05-08 | 南京航空航天大学 | 一种适用于太阳能电池阵的高透光率超宽带低散射超表面 |
Also Published As
Publication number | Publication date |
---|---|
JPWO2012160862A1 (ja) | 2014-07-31 |
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