WO2012153549A1 - Dispositif formant capteur piézoélectrique - Google Patents

Dispositif formant capteur piézoélectrique Download PDF

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Publication number
WO2012153549A1
WO2012153549A1 PCT/JP2012/052229 JP2012052229W WO2012153549A1 WO 2012153549 A1 WO2012153549 A1 WO 2012153549A1 JP 2012052229 W JP2012052229 W JP 2012052229W WO 2012153549 A1 WO2012153549 A1 WO 2012153549A1
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WO
WIPO (PCT)
Prior art keywords
piezoelectric
piezoelectric sensor
sensor device
detection
detection element
Prior art date
Application number
PCT/JP2012/052229
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English (en)
Japanese (ja)
Inventor
陽平 館
谷本　亮介
Original Assignee
株式会社村田製作所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社村田製作所 filed Critical 株式会社村田製作所
Publication of WO2012153549A1 publication Critical patent/WO2012153549A1/fr

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/178—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator of a laminated structure of multiple piezoelectric layers with inner electrodes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
    • G01N29/22—Details, e.g. general constructional or apparatus details
    • G01N29/24—Probes
    • G01N29/2437—Piezoelectric probes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N5/00—Analysing materials by weighing, e.g. weighing small particles separated from a gas or liquid
    • G01N5/02—Analysing materials by weighing, e.g. weighing small particles separated from a gas or liquid by absorbing or adsorbing components of a material and determining change of weight of the adsorbent, e.g. determining moisture content
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/0504—Holders; Supports for bulk acoustic wave devices
    • H03H9/0514—Holders; Supports for bulk acoustic wave devices consisting of mounting pads or bumps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/177—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator of the energy-trap type
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2291/00—Indexing codes associated with group G01N29/00
    • G01N2291/02—Indexing codes associated with the analysed material
    • G01N2291/025—Change of phase or condition
    • G01N2291/0256—Adsorption, desorption, surface mass change, e.g. on biosensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2291/00—Indexing codes associated with group G01N29/00
    • G01N2291/04—Wave modes and trajectories
    • G01N2291/042—Wave modes
    • G01N2291/0426—Bulk waves, e.g. quartz crystal microbalance, torsional waves

Definitions

  • the present invention relates to a piezoelectric sensor device used for detection of biochemical substances, inorganic or organic materials, and more particularly, to detect using a change in resonance characteristics due to mass load of a detection substance on a detection surface.
  • the present invention relates to a piezoelectric sensor device that detects a substance.
  • Patent Document 1 discloses a QCM (Quartz Crystal Microbalance) sensor shown in FIGS. 5 (a) and 5 (b).
  • QCM Quadrat Crystal Microbalance
  • the crystal unit 1002 has a structure in which electrodes are formed on the upper surface and the lower surface of a crystal substrate.
  • the resonance characteristics of the crystal unit 1002 change.
  • a substance to be detected is detected using the change in the resonance characteristics.
  • the QCM sensor 1001 uses a substantially cylindrical package member 1003.
  • the package member 1003 has a substantially cylindrical shape and has a bottom surface closed.
  • the crystal unit 1002 is fixed in a substantially cylindrical package member 1003 with an adhesive 1004.
  • the upper side of the crystal unit 1002 is opened toward the upper end opening of the package member 1003. Accordingly, the substance to be detected can adhere to the upper surface of the crystal unit 1002.
  • a sealed space B is formed below the crystal unit 1002 so as not to disturb vibration.
  • the closed space B had to be formed on the surface opposite to the detection surface of the crystal unit 1002. For this reason, the miniaturization could not be promoted. In addition, the space B must be sealed. Otherwise, the detected substance may enter the space B and the detected substance may not be detected accurately.
  • the crystal unit 1002 must be accurately fixed to the inner peripheral surface of the package member 1003. That is, if the crystal unit 1002 is not fixed at an accurate position, the detection accuracy decreases.
  • the crystal unit 1002 is fixed to the package member 1003 with an adhesive 1004. However, it is difficult to fix the crystal unit 1002 in an accurate position with the adhesive 1004. Therefore, there is a problem that it takes a cost to manage the fixing accuracy of the crystal unit 1002.
  • An object of the present invention is to provide a piezoelectric sensor device that can be easily and inexpensively manufactured and can be downsized without requiring a complicated operation for managing accuracy when fixing a piezoelectric detection element. It is to provide.
  • the piezoelectric sensor device includes a piezoelectric detection element, a bonding layer, and a holding member.
  • the piezoelectric detection element has an open detection surface, and is configured to detect a detection target substance based on a mass change when the detection target substance adheres to the detection surface, and has a first acoustic impedance value Z1.
  • the bonding layer is laminated on a surface opposite to the detection surface of the piezoelectric detection element, and is made of a material having a second acoustic impedance value Z2 smaller than the first acoustic impedance value Z1.
  • the holding member is bonded to the surface of the bonding layer opposite to the piezoelectric detection element, and is made of a material having a third acoustic impedance value Z3 larger than the second acoustic impedance value Z2.
  • a plurality of piezoelectric sensor devices are provided, and the resonance frequencies of the piezoelectric detection elements of the plurality of piezoelectric sensor devices are equalized.
  • the vibration of the piezoelectric detection element is unlikely to leak to other members such as a mounting substrate via the holding member. Therefore, interference between the piezoelectric detection elements of the plurality of piezoelectric sensor devices can be suppressed. Therefore, by mounting a plurality of piezoelectric sensor devices configured using piezoelectric detection elements having the same resonance frequency on, for example, one mounting substrate, a piezoelectric sensor device having a plurality of detection portions can be provided.
  • one of the plurality of piezoelectric sensor devices is a reference piezoelectric sensor device, and the other piezoelectric sensor device is a detection piezoelectric sensor device.
  • the substance to be detected can be detected with higher accuracy by using the output of the reference piezoelectric sensor device and the output of the detection piezoelectric sensor device.
  • a mounting board on which the plurality of piezoelectric sensor devices are mounted is further provided.
  • the plurality of piezoelectric sensor devices can be mounted on one mounting substrate, and a piezoelectric sensor device having a plurality of detection portions can be configured as a single component.
  • the piezoelectric detection element includes a plurality of electrodes provided to face the piezoelectric substrate via a part or all of the piezoelectric substrate.
  • a piezoelectric detection element used in the piezoelectric sensor device of the present invention can be configured in the same manner as a known piezoelectric vibrator.
  • the piezoelectric sensor device according to the present invention can be used for detecting various substances to be detected.
  • a biosensor apparatus using a biochemical substance as a substance to be detected is configured. .
  • a biochemical substance can be detected with high accuracy, and a small and inexpensive biosensor device can be provided.
  • the piezoelectric sensor device since the acoustic impedance values of the piezoelectric detection element, the bonding layer, and the piezoelectric sensor device are set as described above, vibration of the piezoelectric detection element is hardly hindered by the bonding layer and the holding member. Therefore, the holding member can be bonded via the bonding layer without providing a space on the surface opposite to the detection surface of the piezoelectric detection element.
  • FIG. 1A is a perspective view of a piezoelectric sensor device according to a first embodiment of the present invention
  • FIG. 1B is a perspective view showing a piezoelectric detection element used in the piezoelectric sensor device.
  • FIG. 2 is a partially cutaway front sectional view showing a piezoelectric sensor device according to a second embodiment of the present invention.
  • FIGS. 3A and 3B are a plan view for explaining another example of the piezoelectric detection element used in the present invention and a schematic plan view showing the electrode shape on the lower surface through the piezoelectric substrate.
  • FIG. 4 is a perspective view showing still another example of the piezoelectric detection element used in the piezoelectric sensor device of the present invention.
  • 5 (a) and 5 (b) are a plan view showing a conventional QCM sensor and a cross-sectional view showing a portion along line AA in FIG. 5 (a).
  • FIG. 1A is a perspective view showing a piezoelectric sensor device according to a first embodiment of the present invention.
  • the piezoelectric sensor device 1 of the present embodiment is a biosensor device that detects biochemical substances such as proteins.
  • the piezoelectric sensor device 1 can also be used for measuring a substance to be detected other than a biochemical substance, for example, a chemical substance such as a gas.
  • the piezoelectric sensor device 1 has a piezoelectric detection element 2. As shown in FIG. 1B, the piezoelectric detection element 2 includes a piezoelectric substrate 3, a first electrode 4 formed on the upper surface of the piezoelectric substrate 3, and a second electrode formed on the lower surface of the piezoelectric substrate 3. And 5.
  • the piezoelectric substrate 3 is made of a piezoelectric ceramic such as a lead zirconate titanate ceramic. However, the piezoelectric substrate 3 may be formed of a piezoelectric single crystal such as quartz.
  • the piezoelectric substrate 3 is made of piezoelectric ceramics and is polarized in the direction indicated by the arrow P shown in the drawing.
  • the piezoelectric substrate 3 has a strip shape with a rectangular planar shape.
  • the polarization direction P is a direction connecting the first end face 3a and the second end face 3b.
  • the first electrode 4 extends from the central region toward the second end surface 3b side on the upper surface of the piezoelectric substrate 3, and reaches the edge formed by the upper surface and the second end surface 3b.
  • the second electrode 5 is formed so as to extend from the central region of the lower surface of the piezoelectric substrate 3 to the edge formed by the first end surface 3a and the lower surface.
  • the first electrode 4 and the second electrode 5 are overlapped via the piezoelectric substrate 3. This overlapping portion constitutes a piezoelectric vibration part.
  • the piezoelectric detection element 2 is a piezoelectric element using an energy confinement type thickness-shear vibration mode.
  • the first and second electrodes 4 and 5 can be formed of an appropriate metal such as Ag, Au, Cu, Al, or an alloy thereof.
  • the piezoelectric detection element 2 is made of piezoelectric ceramics, and its acoustic impedance value is defined as a first acoustic impedance value Z1.
  • the upper surface of the piezoelectric detection element 2 is a detection surface.
  • a bonding layer 6 is laminated on the surface of the piezoelectric detection element 2 opposite to the detection surface, that is, the lower surface.
  • the bonding layer 6 is made of an insulating adhesive.
  • an appropriate adhesive such as an epoxy resin adhesive or a silicone resin adhesive can be used.
  • the bonding layer 6 may be an insulating bonding material other than the adhesive as long as it performs the bonding function.
  • the holding member 7 is laminated on the lower surface of the bonding layer 6.
  • the holding member 7 has a rectangular plate shape.
  • the holding member 7 has the same planar shape as the piezoelectric substrate 3.
  • the holding member 7 constitutes a surface on the side where the piezoelectric sensor device 1 is mounted on the mounting substrate. That is, the holding member 7 is bonded via the bonding layer 6 in order to open the detection surface of the piezoelectric detection element 2 so that the substance to be detected can adhere and to seal the opposite surface.
  • an appropriate material such as an insulating ceramic such as alumina or a synthetic resin such as an epoxy resin can be used.
  • the holding member 7 is made of an insulating ceramic.
  • the acoustic impedance value of the bonding layer 6 is a second acoustic impedance value Z2, and the acoustic impedance value of the holding member 7 is a third acoustic impedance value Z3.
  • a first terminal electrode 8 is formed on the first end face of the laminate composed of the bonding layer 6 and the holding member 7.
  • a second terminal electrode 9 is formed on the opposite end surface facing the first end surface.
  • the first terminal electrode 8 is formed so as to extend from the first end face to the lower face of the laminate.
  • the second terminal electrode 9 is formed so as to reach the upper surface and the lower surface from the second end surface of the laminate. The portion of the second terminal electrode 9 reaching the upper surface of the laminate is in surface contact with the first electrode 4.
  • the portions of the first terminal electrode 8 and the second terminal electrode 9 reaching the lower surface of the laminate are provided in contact with electrode lands and the like on the mounting substrate described later in surface contact.
  • the resonance characteristics of the piezoelectric detection element 2 change. Thereby, the presence or absence of the substance to be detected and the amount of the substance to be detected can be detected.
  • the piezoelectric sensor device 1 since the piezoelectric sensor device 1 only needs to be laminated and bonded to the holding member 7 via the bonding layer 6, the piezoelectric sensor device 1 can simplify the assembly process.
  • the conventional QCM sensor 1001 since the space B must be formed, the package structure is complicated, and the accuracy of the fixing position of the crystal unit 1002 must be increased.
  • the piezoelectric sensor device 1 according to the present embodiment since it is not necessary to provide a space, it is possible not only to simplify the package structure but also to increase the fixing accuracy of the piezoelectric detection element 2.
  • the resonance characteristics of the piezoelectric detection element 2 are hardly deteriorated.
  • the first acoustic impedance value Z1 to the third acoustic impedance value Z3 have a relationship of Z1> Z2 ⁇ Z3. That is, since the first to third acoustic impedance values Z1 to Z3 satisfy such a relationship, the vibration leaked from the piezoelectric detection element 2 to the bonding layer 6 is an interface between the bonding layer 6 and the holding member 7. Reflected by. Therefore, even if the structure does not provide a space, the resonance characteristics of the piezoelectric detection element 2 are unlikely to deteriorate. Therefore, it is possible to measure the presence / absence of the substance to be detected and the amount of the substance to be detected with high accuracy by using the change in resonance characteristics due to the mass load action of the substance to be detected attached to the detection surface.
  • FIG. 2 is a partially cutaway front sectional view showing a piezoelectric sensor device 16 according to a second embodiment of the present invention.
  • a plurality of piezoelectric sensor devices 1, 1 ⁇ / b> A are mounted on the mounting substrate 11.
  • the piezoelectric sensor devices 1 and 1A are configured in the same manner as the piezoelectric sensor device 1 of the first embodiment.
  • the mounting substrate 11 is made of an insulating material such as alumina. Electrode lands 12 to 15 are formed on the mounting substrate 11. The first and second terminal electrodes 8 and 9 of the piezoelectric sensor device 1 are in contact with the electrode lands 12 and 13, respectively. In this way, the piezoelectric sensor device 1 is mounted on the portion where the electrode lands 12 and 13 are formed using a conductive bonding material (not shown) made of solder, conductive adhesive or the like. Similarly, the piezoelectric sensor device 1 ⁇ / b> A is mounted on the mounting substrate 11 in a portion where the electrode lands 14 and 15 are provided.
  • the piezoelectric sensor devices 1 and 1A have the above-described structure, the vibration of the piezoelectric detection element 2 hardly leaks to the holding member 7 side. Therefore, even when the plurality of piezoelectric sensor devices 1 and 1A are fixed and mounted on the same mounting substrate 11, that is, a single mounting substrate 11, interference between the piezoelectric sensor devices 1 and 1A hardly occurs.
  • the piezoelectric sensor device 1 and the piezoelectric sensor device 1A exactly the same piezoelectric sensor device having the same resonance frequency of the piezoelectric detection element 2 can be used. Thereby, the assembly process of the piezoelectric sensor device 16 according to the second embodiment having the plurality of piezoelectric sensor devices 1 and 1A can be simplified and the cost can be reduced.
  • any of the plurality of piezoelectric sensor devices 1 and 1A may be used as a detection piezoelectric sensor device.
  • one piezoelectric sensor device 1 is used as a reference piezoelectric sensor device, and the other piezoelectric sensor device 1A is used. It is desirable to use a piezoelectric sensor device for detection. Accordingly, the substance to be detected can be measured with higher accuracy based on the output difference between the reference piezoelectric sensor device and the detection piezoelectric sensor device.
  • the number of piezoelectric sensor devices is not limited to the illustrated configuration, and three or more piezoelectric sensor devices may be mounted.
  • the plurality of piezoelectric sensor devices 1 and 1A are mounted on the mounting substrate 11, but only one piezoelectric sensor device 1 is mounted on the mounting substrate. Also good.
  • the resonance frequency of the piezoelectric detection element 2 of the piezoelectric sensor device 1 and the resonance frequency of the piezoelectric detection element 2 of the piezoelectric sensor device 1A are made equal, but they may be different. When the resonance frequencies are different, interference between the piezoelectric sensor devices 1 and 1A can be more effectively suppressed.
  • FIGS. 3A and 3B are a plan view showing a modification of the piezoelectric detection element used in the present invention and a schematic plan view showing the electrode shape on the lower surface through the piezoelectric substrate.
  • the piezoelectric detection element 21 has a rectangular plate-shaped piezoelectric substrate 22.
  • the piezoelectric substrate 22 is made of piezoelectric ceramic and is polarized in the thickness direction.
  • a first electrode 23 having a circular planar shape is formed at the center of the upper surface of the piezoelectric substrate 22.
  • a second electrode 24 is formed on the lower surface so as to face the first electrode 23.
  • a portion where the first electrode 23 and the second electrode 24 overlap each other constitutes an energy confinement type piezoelectric vibration portion using a thickness longitudinal vibration mode.
  • the first electrode 23 is electrically connected via a wiring electrode 25 to a connection electrode 26 provided along the edge formed by the upper surface and one end surface of the piezoelectric substrate 22.
  • the second electrode 24 is connected to the connection electrode 28 via the wiring electrode 27.
  • the connection electrode 28 is formed so as to reach the edge formed by the lower surface of the piezoelectric substrate 22 and the other end surface.
  • the piezoelectric detection element may be an energy confinement type piezoelectric element using a thickness longitudinal vibration mode.
  • FIG. 4 is a perspective view for explaining still another modified example of the piezoelectric detecting element used in the present invention.
  • the piezoelectric detection element 31 of the present modification is an energy confinement type piezoelectric element using a second harmonic of thickness longitudinal vibration.
  • the piezoelectric detection element 31 has a rectangular plate-shaped piezoelectric substrate 32.
  • the piezoelectric substrate 32 is polarized in the thickness direction.
  • a first electrode 33 is formed on the upper surface of the piezoelectric substrate 32, and a second electrode 34 is formed on the lower surface.
  • the first electrode 33 and the second electrode 34 extend from the center of the upper surface and the lower surface of the piezoelectric substrate 32 toward the second end surface 32b.
  • an internal electrode 35 is formed at an intermediate height position of the piezoelectric substrate 32.
  • the internal electrode 35 overlaps the first electrode 33 and the second electrode 34 with the piezoelectric substrate layer in the central region of the piezoelectric substrate 32.
  • the internal electrode 35 extends from the central portion of the piezoelectric substrate 32 toward the first end face 32a and is drawn out to the first end face 32a.
  • an energy confinement type piezoelectric element using the second harmonic of the thickness longitudinal vibration mode is applied by applying an alternating electric field between the first and second electrodes 33 and 34 and the internal electrode 35.
  • an energy confinement type piezoelectric element using such a higher-order mode of the thickness longitudinal vibration mode may be used as the piezoelectric detection element.
  • various energy confinement type piezoelectric elements such as a piezoelectric element using a harmonic in the thickness longitudinal vibration mode and the thickness longitudinal vibration mode are not limited to the thickness sliding mode.

Abstract

L'invention porte sur un dispositif formant capteur piézoélectrique avec lequel une réduction de la dimension du dispositif peut être obtenue et dans lequel des coûts peuvent être réduits sans nécessiter de fixation précise de l'élément de détection piézoélectrique et sans nécessiter de fournir un espace sur le côté opposé à la face de détection. Une face latérale d'un élément de détection piézoélectrique (2) du type à énergie enfermée est désignée comme la face de détection et un élément de support (7) est stratifié, avec interposition d'une couche de jonction (6), sur la face sur le côté opposé à cette face de détection. Si la valeur d'impédance acoustique de l'élément de détection piézoélectrique (2) est identifiée comme la première valeur d'impédance acoustique Z1, la valeur d'impédance acoustique de la couche de jonction (6) est identifiée comme la deuxième valeur d'impédance acoustique Z2, et la valeur d'impédance acoustique de l'élément de support (7) est identifiée comme la troisième valeur d'impédance acoustique Z3, alors, pour ce dispositif formant capteur piézoélectrique (1), il est spécifié que : Z1 > Z2 < Z3.
PCT/JP2012/052229 2011-05-12 2012-02-01 Dispositif formant capteur piézoélectrique WO2012153549A1 (fr)

Applications Claiming Priority (2)

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JP2011107426 2011-05-12
JP2011-107426 2011-05-12

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WO2012153549A1 true WO2012153549A1 (fr) 2012-11-15

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03144359A (ja) * 1989-10-31 1991-06-19 Sumitomo Bakelite Co Ltd 超音波センサー
JPH08251694A (ja) * 1995-02-15 1996-09-27 Hewlett Packard Co <Hp> 超音波変換器および反射減衰方法
JP2005533265A (ja) * 2002-07-19 2005-11-04 シーメンス　アクチエンゲゼルシヤフト 物質を検出する装置および物質を検出する方法
JP2007508539A (ja) * 2003-10-08 2007-04-05 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ バルク超音波センサ

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03144359A (ja) * 1989-10-31 1991-06-19 Sumitomo Bakelite Co Ltd 超音波センサー
JPH08251694A (ja) * 1995-02-15 1996-09-27 Hewlett Packard Co <Hp> 超音波変換器および反射減衰方法
JP2005533265A (ja) * 2002-07-19 2005-11-04 シーメンス　アクチエンゲゼルシヤフト 物質を検出する装置および物質を検出する方法
JP2007508539A (ja) * 2003-10-08 2007-04-05 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ バルク超音波センサ

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