WO2012148234A3 - 풀컬러 led 디스플레이 장치 및 그 제조방법 - Google Patents

풀컬러 led 디스플레이 장치 및 그 제조방법 Download PDF

Info

Publication number
WO2012148234A3
WO2012148234A3 PCT/KR2012/003324 KR2012003324W WO2012148234A3 WO 2012148234 A3 WO2012148234 A3 WO 2012148234A3 KR 2012003324 W KR2012003324 W KR 2012003324W WO 2012148234 A3 WO2012148234 A3 WO 2012148234A3
Authority
WO
WIPO (PCT)
Prior art keywords
electrodes
display apparatus
led display
full
color led
Prior art date
Application number
PCT/KR2012/003324
Other languages
English (en)
French (fr)
Other versions
WO2012148234A2 (ko
Inventor
도영락
성연국
Original Assignee
국민대학교 산학협력단
피에스아이 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 국민대학교 산학협력단, 피에스아이 주식회사 filed Critical 국민대학교 산학협력단
Priority to US14/114,338 priority Critical patent/US9059114B2/en
Publication of WO2012148234A2 publication Critical patent/WO2012148234A2/ko
Publication of WO2012148234A3 publication Critical patent/WO2012148234A3/ko

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30Devices specially adapted for multicolour light emission
    • H10K59/35Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/351Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels comprising more than three subpixels, e.g. red-green-blue-white [RGBW]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26Materials of the light emitting region
    • H01L33/30Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/508Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30Devices specially adapted for multicolour light emission
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H01L33/18Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/501Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502Wavelength conversion materials
    • H01L33/504Elements with two or more wavelength conversion materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30Devices specially adapted for multicolour light emission
    • H10K59/35Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Led Device Packages (AREA)

Abstract

본 발명은 풀컬러 LED 디스플레이 장치 및 그 제조방법에 관한 것으로서, 보다 상세하게는, 1) 기판 위에 형성된 복수개의 제1 전극; 2) 상기 제1 전극 상에 형성된 각각의 단위 픽셀위치들(pixel sites)에 부착된 5개 이상의 초소형 청색 LED 소자; 3) 상기 기판 및 상기 청색 LED 소자의 상부에 형성된 절연층; 4) 상기 절연층 위에 형성된 복수개의 제2 전극; 및 5) 상기 단위 픽셀위치들 중 선택된 일부 단위 픽셀위치들에 대응하는 제2 전극의 상부에 형성된 녹색 색변환층 및 적색 색변환층을 포함하는 풀컬러 LED 디스플레이 장치 및, 1) 기판 위에 복수개의 제1 전극을 형성하는 단계; 2) 상기 제1 전극 상에 형성된 각각의 단위 픽셀위치 (pixel sites)에 5개 이상의 초소형 청색 LED 소자들을 부착시키는 단계; 3) 상기 기판의 상부에 절연층을 형성하는 단계; 4) 상기 절연층 위에 복수개의 제2 전극을 형성하는 단계; 및 5) 상기 단위 픽셀위치들 중 선택된 일부 단위 픽셀위치들에 대응하는 제2 전극의 상부에 녹색 색변환층 및 적색 색변환층을 순차적으로 패터닝하는 단계를 포함하는 풀컬러 LED 디스플레이 장치의 제조방법에 관한 것이다. 본 발명에 따르면, 대면적 구현이 용이하고, 불량률이 낮은 풀컬러 LED 디스플레이 장치 및 그 제조방법을 제공할 수 있다.
PCT/KR2012/003324 2011-04-29 2012-04-27 풀컬러 led 디스플레이 장치 및 그 제조방법 WO2012148234A2 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US14/114,338 US9059114B2 (en) 2011-04-29 2012-04-27 Full-color LED display device and manufacturing method thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2011-0040925 2011-04-29
KR1020110040925A KR101209449B1 (ko) 2011-04-29 2011-04-29 풀-칼라 led 디스플레이 장치 및 그 제조방법

Publications (2)

Publication Number Publication Date
WO2012148234A2 WO2012148234A2 (ko) 2012-11-01
WO2012148234A3 true WO2012148234A3 (ko) 2012-12-20

Family

ID=47072956

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/003324 WO2012148234A2 (ko) 2011-04-29 2012-04-27 풀컬러 led 디스플레이 장치 및 그 제조방법

Country Status (3)

Country Link
US (1) US9059114B2 (ko)
KR (1) KR101209449B1 (ko)
WO (1) WO2012148234A2 (ko)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101452768B1 (ko) * 2012-08-21 2014-10-21 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법
US9252375B2 (en) 2013-03-15 2016-02-02 LuxVue Technology Corporation Method of fabricating a light emitting diode display with integrated defect detection test
KR101820275B1 (ko) 2013-03-15 2018-01-19 애플 인크. 리던던시 스킴을 갖춘 발광 다이오드 디스플레이 및 통합 결함 검출 테스트를 갖는 발광 다이오드 디스플레이를 제작하는 방법
KR101436123B1 (ko) * 2013-07-09 2014-11-03 피에스아이 주식회사 초소형 led를 포함하는 디스플레이 및 이의 제조방법
WO2015104648A1 (en) 2014-01-09 2015-07-16 Koninklijke Philips N.V. Light emitting device with reflective sidewall
US20170236807A1 (en) * 2014-10-28 2017-08-17 The Regents Of The University Of California Iii-v micro-led arrays and methods for preparing the same
US10249599B2 (en) * 2016-06-29 2019-04-02 eLux, Inc. Laminated printed color conversion phosphor sheets
KR101713818B1 (ko) 2014-11-18 2017-03-10 피에스아이 주식회사 초소형 led 소자를 포함하는 전극어셈블리 및 그 제조방법
KR101674052B1 (ko) * 2014-11-18 2016-11-09 피에스아이 주식회사 초소형 led 소자를 전극어셈블리에 배치시키는 방법
KR101672781B1 (ko) * 2014-11-18 2016-11-07 피에스아이 주식회사 수평배열 어셈블리용 초소형 led 소자, 이의 제조방법 및 이를 포함하는 수평배열 어셈블리
DE102015101888A1 (de) 2015-02-10 2016-08-11 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
JP6641824B2 (ja) * 2015-09-16 2020-02-05 日亜化学工業株式会社 発光装置
CN105204104B (zh) 2015-10-30 2018-05-25 京东方科技集团股份有限公司 滤光片及其制作方法、显示基板及显示装置
KR101730977B1 (ko) 2016-01-14 2017-04-28 피에스아이 주식회사 초소형 led 전극어셈블리
CN105609535B (zh) * 2016-01-15 2018-11-13 京东方科技集团股份有限公司 显示基板、显示装置及其制作方法
FR3048817B1 (fr) 2016-03-11 2018-06-15 Valeo Comfort And Driving Assistance Ecran et afficheur tete haute comprenant un tel ecran
US10211384B2 (en) * 2016-03-28 2019-02-19 Samsung Electronics Co., Ltd. Light emitting diode apparatus and manufacturing method thereof
JP6212589B2 (ja) * 2016-03-28 2017-10-11 シャープ株式会社 発光装置および画像表示装置
DE102016113168A1 (de) * 2016-07-18 2018-01-18 Osram Opto Semiconductors Gmbh Modul für eine videowand
US9935153B1 (en) 2016-11-07 2018-04-03 Samsung Electronics Co., Ltd. Light emitting diode panel and manufacturing method thereof
FR3068819B1 (fr) * 2017-07-04 2019-11-08 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif d'affichage a leds
KR102407848B1 (ko) * 2017-09-11 2022-06-13 삼성디스플레이 주식회사 퀀텀-나노 발광 다이오드 픽셀 및 퀀텀-나노 발광 다이오드 디스플레이 장치
US10236324B1 (en) 2017-09-15 2019-03-19 Samsung Display Co., Ltd. Full-color light emitting diode display having improved luminance and method of manufacturing the same
US10989376B2 (en) * 2017-11-28 2021-04-27 Facebook Technologies, Llc Assembling of strip of micro light emitting diodes onto backplane
CN108269941B (zh) * 2018-01-23 2019-08-09 福州大学 一种基于垂直孔道sba-15限域的量子点发光二极管器件的制作方法
WO2019203404A1 (ko) * 2018-04-19 2019-10-24 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법
US10607515B2 (en) 2018-04-19 2020-03-31 Lg Electronics Inc. Display device using semiconductor light emitting device and method for manufacturing the same
KR20180077114A (ko) * 2018-06-22 2018-07-06 피에스아이 주식회사 전기적 컨택이 향상된 초소형 led 전극 어셈블리
KR102568308B1 (ko) 2018-06-26 2023-08-18 삼성디스플레이 주식회사 표시 장치
KR102585158B1 (ko) 2018-07-04 2023-10-05 삼성디스플레이 주식회사 표시 장치
TWI720339B (zh) * 2018-08-31 2021-03-01 東貝光電科技股份有限公司 應用於微型led顯示器之led發光模組及應用該led發光模組所製成之顯示器
KR102654268B1 (ko) * 2018-10-10 2024-04-03 삼성디스플레이 주식회사 표시 장치
CN113169209A (zh) 2018-11-27 2021-07-23 三星显示有限公司 显示设备
KR20200066438A (ko) 2018-11-30 2020-06-10 삼성디스플레이 주식회사 표시 장치 및 그의 제조 방법
FR3091029B1 (fr) * 2018-12-20 2021-07-02 Aledia Dispositif optoélectronique comprenant une matrice de blocs photoluminescents et son procédé de fabrication
CN111381372A (zh) * 2018-12-28 2020-07-07 永众科技股份有限公司 穿透式显示设备及增强现实显示器
US11307654B1 (en) * 2019-01-10 2022-04-19 Facebook Technologies, Llc Ambient light eye illumination for eye-tracking in near-eye display
CN109872645B (zh) * 2019-03-19 2021-09-24 深圳市洲明科技股份有限公司 防水led显示屏
US11869880B2 (en) 2019-11-05 2024-01-09 Samsung Electronics Co., Ltd. Method of transferring micro-light emitting diode for LED display
KR20210079433A (ko) * 2019-12-19 2021-06-30 삼성디스플레이 주식회사 표시 장치
JP2021179492A (ja) * 2020-05-12 2021-11-18 セイコーエプソン株式会社 電気光学装置および電子機器
US20210359018A1 (en) * 2020-05-14 2021-11-18 Seiko Epson Corporation Electro-optical device and electronic apparatus
KR20210142791A (ko) 2020-05-18 2021-11-26 삼성디스플레이 주식회사 표면 개질용 리간드, 이를 포함하는 발광 소자, 및 표시 장치의 제조 방법
KR20220021229A (ko) 2020-08-13 2022-02-22 삼성전자주식회사 디스플레이 장치
KR20220056898A (ko) * 2020-10-28 2022-05-09 삼성디스플레이 주식회사 발광 소자 유닛 및 이를 포함하는 표시 장치
KR20220108843A (ko) * 2021-01-27 2022-08-04 삼성디스플레이 주식회사 발광 소자, 발광 소자를 포함하는 발광 소자 유닛, 및 표시 장치
KR102551869B1 (ko) 2021-08-02 2023-07-04 국민대학교산학협력단 로드형 led 소자 수직배치형 전극 어셈블리, 이의 제조방법 및 이를 포함하는 광원

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990034461A (ko) * 1997-10-29 1999-05-15 엄길용 평판표시소자
JP2005267991A (ja) * 2004-03-18 2005-09-29 Hitachi Ltd 表示装置
KR20070096212A (ko) * 2006-03-21 2007-10-02 삼성에스디아이 주식회사 Led 칩을 이용한 디스플레이 장치의 제조방법

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6600175B1 (en) * 1996-03-26 2003-07-29 Advanced Technology Materials, Inc. Solid state white light emitter and display using same
JP3378465B2 (ja) * 1997-05-16 2003-02-17 株式会社東芝 発光装置
CN1464953A (zh) * 2001-08-09 2003-12-31 松下电器产业株式会社 Led照明装置和卡型led照明光源
JP3813599B2 (ja) 2003-06-13 2006-08-23 ローム株式会社 白色発光の発光ダイオード素子を製造する方法
US7352006B2 (en) * 2004-09-28 2008-04-01 Goldeneye, Inc. Light emitting diodes exhibiting both high reflectivity and high light extraction
JP4450207B2 (ja) 2005-01-14 2010-04-14 セイコーエプソン株式会社 発光素子の製造方法
EP1727216B1 (en) * 2005-05-24 2019-04-24 LG Electronics, Inc. Rod type light emitting diode and method for fabricating the same
KR20070021671A (ko) * 2005-08-19 2007-02-23 서울옵토디바이스주식회사 나노막대들의 어레이를 채택한 발광 다이오드 및 그것을제조하는 방법
FR2898434B1 (fr) 2006-03-13 2008-05-23 Centre Nat Rech Scient Diode electroluminescente blanche monolithique
JP4805026B2 (ja) * 2006-05-29 2011-11-02 シャープ株式会社 発光装置、表示装置及び発光装置の制御方法
US20090140279A1 (en) * 2007-12-03 2009-06-04 Goldeneye, Inc. Substrate-free light emitting diode chip
JP5836122B2 (ja) * 2008-07-07 2015-12-24 グロ アーベーGlo Ab ナノ構造のled
JP4454689B1 (ja) * 2009-09-10 2010-04-21 有限会社ナプラ 発光ダイオード、発光装置、照明装置、ディスプレイ及び信号灯
KR101140096B1 (ko) 2009-10-12 2012-04-30 전북대학교산학협력단 나노로드 발광 다이오드 및 이의 제조방법
KR20110041401A (ko) 2009-10-15 2011-04-21 샤프 가부시키가이샤 발광 장치 및 그 제조 방법
US20110175126A1 (en) * 2010-01-15 2011-07-21 Hung-Chih Yang Light-emitting diode structure

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990034461A (ko) * 1997-10-29 1999-05-15 엄길용 평판표시소자
JP2005267991A (ja) * 2004-03-18 2005-09-29 Hitachi Ltd 表示装置
KR20070096212A (ko) * 2006-03-21 2007-10-02 삼성에스디아이 주식회사 Led 칩을 이용한 디스플레이 장치의 제조방법

Also Published As

Publication number Publication date
US9059114B2 (en) 2015-06-16
US20140124802A1 (en) 2014-05-08
KR101209449B1 (ko) 2012-12-07
WO2012148234A2 (ko) 2012-11-01
KR20120122645A (ko) 2012-11-07

Similar Documents

Publication Publication Date Title
WO2012148234A3 (ko) 풀컬러 led 디스플레이 장치 및 그 제조방법
WO2008090845A1 (ja) 多原色表示装置
EP2403030A3 (en) Organic light emitting diode display
WO2006116346A3 (en) Multicolor oled displays
EP3291326A3 (en) Display device having a micro-cavity structure and method for forming the same
EP2819203A3 (en) Organic light-emitting display apparatus and method of manufacturing the same
WO2016046283A3 (en) Compound micro-assembly strategies and devices
WO2013009007A3 (en) Optical member, display device having the same and method of fabricating the same
WO2008114695A1 (ja) 表示装置
TW200641759A (en) Method of determining OLED driving signal
CN103178005A (zh) 有机发光显示装置以及制造该装置的方法
WO2012102501A3 (ko) 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법
JP2015515732A5 (ja) 高解像度表示パネル
WO2015101258A8 (zh) 一种透明 oled 器件及采用其的显示装置
WO2008063353A3 (en) Display with rgb color filter element sets
EP2713362A3 (en) Display device and method of driving the same
RU2012136460A (ru) Устройство отображения и телевизионный приемник
EP2568505A3 (en) Display and electronic unit
CN104409474B (zh) 像素单元、像素结构及其制作方法
JP2011528137A5 (ko)
US10431631B2 (en) Stacked OLED device and method of making the same
EP2747165A3 (en) Organic light emitting display device
JP2012242817A5 (ko)
EP3817062A3 (en) Organic light-emitting display apparatus
WO2013046275A9 (ja) 表示パネルおよびその製造方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 12776044

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 14114338

Country of ref document: US

122 Ep: pct application non-entry in european phase

Ref document number: 12776044

Country of ref document: EP

Kind code of ref document: A2