WO2012136009A1 - 发光二极管构造及其制造方法 - Google Patents

发光二极管构造及其制造方法 Download PDF

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Publication number
WO2012136009A1
WO2012136009A1 PCT/CN2011/072813 CN2011072813W WO2012136009A1 WO 2012136009 A1 WO2012136009 A1 WO 2012136009A1 CN 2011072813 W CN2011072813 W CN 2011072813W WO 2012136009 A1 WO2012136009 A1 WO 2012136009A1
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WO
WIPO (PCT)
Prior art keywords
recess
light
emitting diode
housing
light emitting
Prior art date
Application number
PCT/CN2011/072813
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English (en)
French (fr)
Inventor
张光耀
胡哲彰
张静
Original Assignee
深圳市华星光电技术有限公司
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Application filed by 深圳市华星光电技术有限公司 filed Critical 深圳市华星光电技术有限公司
Priority to US13/128,102 priority Critical patent/US20120256213A1/en
Publication of WO2012136009A1 publication Critical patent/WO2012136009A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations

Definitions

  • the present invention relates to a light emitting diode structure and a method of fabricating the same, and more particularly to a light emitting diode structure having a spherical surface light transmitting package portion and a method of fabricating the same.
  • Liquid crystal display Display LCD
  • LCD Liquid crystal display Display
  • FPD Fluorescence-to-CIE 1931
  • LCD liquid crystal display
  • FPD liquid crystal material of the liquid crystal display
  • a backlight module needs to be provided in the liquid crystal display to provide a desired light source.
  • the backlight module can be divided into a side-in type backlight module and a direct-lit backlight module.
  • a backlight module mainly uses a cold cathode fluorescent lamp (CCFL), a hot cathode fluorescent lamp (HCFL), and a semiconductor light emitting element as a light source, and a semiconductor light emitting element mainly emits light by using a light emitting diode (LED), which is compared with a cathode.
  • CCFL cold cathode fluorescent lamp
  • HCFL hot cathode fluorescent lamp
  • LED light emitting diode
  • Fluorescent tubes are more energy efficient, longer lasting, and lighter, and thus have a tendency to gradually replace cathode fluorescent tubes.
  • the light-emitting diodes are mostly packaged in the form of a chip to form a light-emitting diode structure, and then bonded to the fixing plate of the backlight module.
  • the type of light-emitting diode structure is classified according to the characteristics of the light-emitting color, the grain material, the light-emitting brightness, the size, and the like.
  • a single crystal grain generally constitutes a point light source, and a plurality of crystal grains can constitute a surface light source and a line light source for information, state indication and display.
  • the light-emitting display also uses a plurality of crystal grains, and is connected through series or parallel connection of the crystal grains and a suitable one.
  • the optical structure is combined to form a light-emitting section and a light-emitting point of the light-emitting display.
  • the surface-adhesive package type LED (SMD-LED) is attached to the surface of the circuit board and is suitable for surface adhesion technology (SMT) processing, because it can be reflowed to solve brightness, viewing angle, flatness, reliability, consistency, etc. problem.
  • SMT surface adhesion technology
  • it uses a lighter PCB board and reflective layer material.
  • the carbon steel material pins of the in-line LED are removed, so that the display reflective layer needs to be filled with less epoxy resin, and the surface of the packaged LED can be easily adhered.
  • the weight of the product is reduced by half, which ultimately makes the application more perfect. Therefore, the surface-adhesive package LED has gradually replaced the lead-type LED, and the application design is more flexible, especially in the LED display market, which has a certain share, and has accelerated development momentum.
  • FIG. 1 discloses a cross-sectional view of a conventional light emitting diode structure.
  • the conventional LED structure 90 includes a housing 91, a first electrode sheet 92, a second electrode sheet 93, an LED chip 94, and a light transmitting encapsulation portion 95.
  • the upper surface of the housing 91 is provided with a recess 911; a portion of the first electrode piece 92 is disposed at the bottom of the recess 911, and another portion extends outside the housing 91 for use with the outside Electrical connection.
  • a portion of the second electrode sheet 93 is disposed at the bottom of the recess 911, and another portion extends outside the housing 91 for electrical connection with the outside.
  • the LED chip 94 has a first electrode (not shown) and a second electrode (not shown).
  • the LED chip 94 is disposed in the recess 911, and the first electrode is electrically connected to the first electrode.
  • the second electrode is electrically connected to the second electrode sheet 93 through a first lead 96; the transparent encapsulating portion 95 encloses the recess 911, and encapsulates each of the recesses 911
  • the light of the light-emitting diode chip 94 can be emitted upward through the light-transmissive encapsulation portion 95.
  • the housing 91 is designed to be ideal for the surface of the light transmissive package portion 95 to be horizontal.
  • the transparent encapsulating portion 95 is actually The surface is in a state of being depressed at the center portion thereof.
  • the refractive index of the light-transmissive encapsulating portion 95 is greater than the refractive index of the air, when the light passes from the inside to the outside through the interface between the surface of the light-transmitting encapsulating portion 95 and the air, a part of the light is totally reflected. Even if these totally reflected light rays are reflected from the wall surface of the recessed portion 911 and then emitted from the light-transmitting package portion 95, the light is attenuated and the light-emitting rate of the light is affected.
  • FIG. 2 is a cross-sectional view showing another conventional light emitting diode structure.
  • the LED structure 90' of FIG. 2 is substantially the same as the LED structure 90 of FIG. 1, and has a housing 91', a recess 911', a first electrode sheet 92', a second electrode sheet 93',
  • the LED chip 94', the light-transmissive encapsulation portion 95' and the lead 96' are different in that the light-transmissive encapsulation portion 95' of the LED structure 90' of FIG. 2 has a spherical surface design.
  • the LED structure 90' is fabricated, the space 952' inside the transparent package portion 95' is first filled with a packaging material. Then, the outer portion 951' of the light-transmissive encapsulating portion 95' is formed by plastic injection molding or the pre-made outer portion 951' is further combined. Therefore, this will relatively increase the manufacturing cost of the light-transmitting package portion 95'.
  • the light-transmissive encapsulation portion 95' protrudes from the housing 91', the light-transmissive encapsulation portion 95' is easily damaged, and is disadvantageous for subsequent SMT or other fabrication of the LED structure 90'. Process.
  • Another object of the present invention is to provide a method for fabricating a light-emitting diode structure that can emit light at a large viewing angle and improve light.
  • an LED structure comprising:
  • a housing having a recess and a boss, the boss being disposed at a periphery of the housing;
  • An LED chip disposed in the recess of the housing
  • a light-transmissive encapsulating portion enclosing a recess of the housing, an edge of the transparent encapsulating portion coincides with an edge of the recess, and covering the LED chip in the recess, and having a height smaller than the boss
  • the spherical surface of the light-emitting diode chip is located at a spherical center position of the spherical surface of the light-transmitting package portion or a position close to the center of the sphere.
  • the bosses are located on opposite sides of the recess or around the recess and surround the recess.
  • the material of the transparent package portion is a silicone resin or a silica resin doped with a phosphor.
  • the present invention further provides an LED structure comprising:
  • a housing having a recess and a boss, the boss being disposed at a periphery of the housing;
  • An LED chip disposed in the recess of the housing
  • a light-transmissive encapsulating portion enclosing a recess of the housing, an edge of the transparent encapsulating portion coincides with an edge of the recess, and covering the LED chip in the recess, and having a height smaller than the boss Spherical surface.
  • the LED chip is disposed at a central position within the recess of the housing, and the spherical surface of the transparent encapsulation portion is located at a highest position directly above the center of the LED chip.
  • the light emitting diode chip is located at a spherical center position of the spherical surface of the light transmissive encapsulating portion or a position close to the center of the sphere.
  • the bosses are located on opposite sides of the recess or around the recess and surround the recess.
  • the material of the transparent package portion is a silicone resin or a silica resin doped with a phosphor.
  • the present invention further provides a method of fabricating a light emitting diode structure, comprising the steps of:
  • the housing has a recess and a boss, the recess is provided with a light-emitting diode chip, the boss is disposed at a periphery of the housing;
  • the dispensing tool injects a packaging material into the concave portion to form a light transmissive encapsulating portion, an edge of the transparent encapsulating portion coincides with an edge of the concave portion, and covers the LED chip in the concave portion, and has The height is smaller than the spherical surface of the boss.
  • the LED chip is disposed at a center position in the recess of the housing, and the dispensing tool is located above the center of the LED chip.
  • the dispensing material of the dispensing tool has a volume greater than a volume of the housing recess.
  • the light emitting diode chip is located at a spherical center position of the spherical surface of the light transmissive encapsulating portion or a position close to the center of the sphere.
  • the bosses are disposed on opposite sides of the recess or around the recess and surround the recess.
  • the encapsulating material is a silicone resin or a silica resin doped with a phosphor.
  • the invention provides a light emitting diode structure and a manufacturing method thereof.
  • the light emitting diode structure comprises a casing, an LED chip and a light transmitting encapsulation portion.
  • the housing has a recess and at least one boss, and the LED chip is disposed in the recess.
  • the light-transmissive encapsulation portion injects a packaging material into the concave portion by a glue tool to form a light-transmissive encapsulation portion, an edge of the light-transmissive encapsulation portion coincides with an edge of the concave portion, and covers the illumination in the concave portion a diode chip having a spherical surface having a height smaller than the boss.
  • the light-emitting diode chip of the light-emitting diode structure of the present invention can emit light through a large viewing angle through the spherical surface of the light-transmitting package portion, and improve the light-emitting efficiency of the light.
  • the height of the boss is greater than the height of the transparent package portion, in addition to other manufacturing processes such as subsequent SMT that can facilitate the configuration of the light emitting diode, the protection of the light emitting diode structure is also protected.
  • the function of the light encapsulation portion is to avoid damage in subsequent manufacturing processes.
  • the light-transmitting package portion injects the packaging material into the concave portion of the light-emitting diode structure housing through the dispensing tool to form a light-transmitting package portion, the edge of the light-transmissive package portion and the edge of the concave portion Coincident and covering the light emitting diode chips in the recess and forming a spherical surface.
  • the light-emitting diode chip of the light-emitting diode structure of the present invention can emit light through a large viewing angle through the spherical surface of the light-transmitting package portion, and improve the light-emitting efficiency of the light.
  • Figure 1 A cross-sectional view of a prior art light emitting diode construction.
  • Figure 2 A cross-sectional view of another prior art light emitting diode construction.
  • Figure 3 is a cross-sectional view showing a first embodiment of the light emitting diode construction of the present invention.
  • Figure 4 is a flow chart showing the manufacturing method of the first embodiment of the light emitting diode construction of the present invention.
  • 5A-5D are schematic flow charts showing the manufacturing method of the first embodiment of the light emitting diode structure of the present invention.
  • Figure 6 is a cross-sectional view showing a second embodiment of the light emitting diode construction of the present invention.
  • FIG. 3 is a cross-sectional view showing a first embodiment of the structure of the light emitting diode of the present invention.
  • the LED structure 10 includes a housing 11 , a first electrode sheet 12 , a second electrode sheet 13 , an LED chip 14 , and a light-transmissive package portion 15 .
  • the housing 11 has a recessed portion 111.
  • the recessed portion 111 is a recessed structure, and its shape can be adjusted according to product requirements.
  • the periphery of the housing 11 is formed with a boss 16 which is located at the recess 111. Relative sides.
  • a portion of the first electrode sheet 12 is disposed in the recess 111, and another portion thereof extends outside the housing 11 for electrical connection with the outside.
  • a portion of the second electrode sheet 13 is disposed in the recess 111, and another portion thereof extends outside the housing 11 for electrical connection with the outside.
  • the LED chip 14 has a first electrode (not shown) and a second electrode (not shown). The LED chip 14 is disposed in the recess 111, and the LED chip 14 is located in the recess 111. Central. The first electrode of the LED chip 14 is electrically connected to the first electrode sheet 12 , and the second electrode is electrically connected to the second electrode sheet 13 via a lead 17 .
  • the transparent encapsulating portion 15 encapsulates the concave portion 111 of the casing 11 by a one-paste process to cover the LED chip 14 , a portion of the first electrode sheet 12 , and a portion of the second electrode sheet 13 in the recess 111 . . Furthermore, the edge of the light-transmissive encapsulation portion 15 coincides with the edge of the concave portion 111 by the control of the dispensing amount of the dispensing process and the effect of the surface tension of the light-transmitting encapsulation portion 15, and is formed.
  • the height of the transparent package portion 15, that is, the height of the highest point 151 of the spherical surface is greater than the height of the edge of the recess 111, and is smaller than the height of the boss 16.
  • the LED chip 14 is preferably disposed at a central position within the recess 111 of the housing 11, and the highest point 151 of the spherical surface of the transparent encapsulation portion 15 is located at the LED. Just above the center of the chip 14. Therefore, the light-emitting diode chip 14 of the light-emitting diode structure 10 of the present invention can emit light through a large viewing angle through the spherical surface of the light-transmitting package portion 15, and improve the light-emitting efficiency of the light.
  • the material of the light-transmitting package portion 15 is preferably a silicone resin (Silicone) Resin), or a silicone resin doped with Phosphor.
  • the silicone resin has better encapsulation and light transmittance, and the silica resin added with the phosphor can improve the overall luminous efficiency.
  • the boss 16 since the height of the boss 16 is greater than the height of the transparent package portion 15, in addition to other manufacturing processes such as subsequent SMT that can facilitate the LED structure 10, the LED is protected.
  • the function of the light-transmissive encapsulation portion 15 of the construction 10 is to avoid damage in subsequent manufacturing processes.
  • the present invention does not limit the number and shape of the bosses 16.
  • the boss 16 may also be formed around the recesses 111. And surrounding the recess 111, the user can set the number or shape of the boss 16 according to actual needs, to provide the need for adsorption use of the manufacturing process, and to create the purpose of protecting the transparent package portion 15.
  • FIG. 4 is a flow chart showing a manufacturing method of the first embodiment of the light emitting diode structure of the present invention
  • FIGS. 5A-5D are a view showing a manufacturing method of the first embodiment of the light emitting diode structure of the present invention. Schematic diagram of the process.
  • Step S01 preparing a housing 11 having a recess 111 and a boss 16 .
  • the recess 111 of the housing 11 is provided with an LED chip 14 .
  • the periphery of the housing 11 forms the boss 16 .
  • the boss 16 is disposed on opposite sides of the recess 111 or around the recess 111 and surrounds the recess 111.
  • Step S02 Preparing a dispensing tool 20, the dispensing tool 20 is provided with an encapsulating material 21 and located above the recess 111.
  • Step S03 The dispensing tool 20 injects an appropriate volume of the encapsulation material 21 into the concave portion 111 to form a light transmissive encapsulation portion.
  • the volume of the encapsulating material 21 injected by the dispensing tool 20 is larger than the volume of the recess 111 of the housing 11.
  • an edge of the transparent package portion 15 formed by solidification of the encapsulation material 21 coincides with an edge of the concave portion 111 and encloses the LED chip in the concave portion 111 by the surface tension of the encapsulation material 21 14.
  • a portion of the first electrode sheet 12 and a portion of the second electrode sheet 13, and the light transmissive encapsulating portion 15 has a spherical surface having a height smaller than that of the boss 16.
  • the LED chip 14 is disposed at a central position in the recess 111 of the housing 11.
  • the dispensing tool 20 is located above the center of the LED chip 14.
  • the encapsulating material 21 is preferably a silicone resin (Silicone) Resin), or a silicone resin doped with Phosphor.
  • FIG. 6 is a cross-sectional view showing a second embodiment of the light emitting diode structure of the present invention.
  • the light emitting diode structure 20 of the present embodiment is similar to the light emitting diode structure 10 of the first embodiment, and thus has the same component name, and has a housing 21, a recess 211, a first electrode sheet 22, a second electrode sheet 23, and a light emitting diode.
  • the spherical surface highest point 251 of the light transmissive encapsulating portion 25 is located directly above the center of the light emitting diode chip 24, and the light emitting diode chip 24 is located at the center of the spherical core 252 of the spherical surface of the light transmissive encapsulating portion 25 or The position close to the center of the core 252, at this time, the radius of the spherical surface of the light-transmitting package portion 25 is R. Therefore, by arranging the light-emitting diode chip 24 at the position of the center 252 of the spherical surface of the light-transmitting package portion 25, the light-emitting efficiency of the entire light can be further improved.
  • the light-emitting diode structure of the present invention injects a package material into the concave portion of the light-emitting diode structure housing through a dispensing tool to form a light-transmissive package portion, and the edge of the light-transmissive package portion
  • the edges of the recesses coincide and cover the LED chip in the recess and form a spherical surface.
  • the light-emitting diode chip of the light-emitting diode structure of the present invention can emit light through a large viewing angle through the spherical surface of the light-transmitting package portion, and improve the light-emitting efficiency of the light.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Description

发光二极管构造及其制造方法 技术领域
本发明涉及一种发光二极管构造及其制造方法，特别是涉及一种具有球形表面透光封装部的发光二极管构造及其制造方法。
 背景技术
液晶显示器(liquid crystal display，LCD)是利用液晶材料的特性来显示图像的一种平板显示装置(flat panel display，FPD)，其相较于其他显示装置而言更具轻薄、低驱动电压及低功耗等优点，已经成为整个消费市场上的主流产品。然而，液晶显示器的液晶材料无法自主发光，必须借助外部光源，因此液晶显示器中需设置背光模块以提供所需的光源。
一般而言，背光模块可分为侧入式背光模块和直下式背光模块两种形式。已知背光模块主要是以冷阴极荧光灯管（CCFL）、热阴极荧光灯管（HCFL）及半导体发光元件作为光源，而半导体发光元件主要又是利用发光二极管（LED）进行发光，其相较于阴极荧光灯管更省电节能、使用寿命更长，且更轻巧，因而有逐渐取代阴极荧光灯管的趋势。
现今，发光二极管多以芯片的形式进行半导体封装，以作成发光二极管构造，再与背光模块的固定板接合。而发光二极管构造的类型，有根据发光颜色、晶粒材料、发光亮度、尺寸大小等情况特征来分类的。单个晶粒一般构成点光源，多个晶粒组装可构成面光源和线光源，作信息、状态指示及显示用，发光显示器也是用多个晶粒，通过晶粒的串联或并联连接与合适的光学结构组合而成的，构成发光显示器的发光段和发光点。其中，表面粘着封装型的LED(SMD-LED)是贴于电路板表面，适合表面粘着技术(SMT)加工，因为可进行回流焊，可以解决亮度、视角、平整度、可靠性、一致性等问题。并且，其采用了更轻的PCB板和反射层材料，改进后去掉了直插LED较重的碳钢材料引脚，使显示反射层需要填充的环氧树脂更少，表面粘着封装LED可轻易地将产品重量减轻一半，最终使应用更加完美。因此，表面粘着封装LED已逐渐替代了引脚式LED，应用设计更灵活，特别是在LED显示市场中占有一定的份额，有加速发展势头。
请参照图1，图1揭示一种现有发光二极管构造的剖视图。所述现有发光二极管构造90包含：一壳体91、一第一电极片92、一第二电极片93、一发光二极管芯片94及一透光封装部95。所述壳体91的上表面设有一凹部911；所述第一电极片92的一部分设于所述凹部911的底部，另一部份延伸至所述壳体91外，以使用于与外部的电性连接。所述第二电极片93的一部分设于所述凹部911的底部，另一部份延伸至所述壳体91外，以使用于与外部的电性连接。所述发光二极管芯片94具有第一电极(未图示)及第二电极(未图示)，该发光二极管芯片94设于所述凹部911之内，其第一电极电性连接于所述第一电极片92上，其第二电极通过一第一引线96电性连接于所述第二电极片93；所述透光封装部95封装所述凹部911，并且封装所述凹部911内的各元件，所述发光二极管芯片94的光线能通过所述透光封装部95向上方发射。
在现有的所述发光二极管构造90中，所述壳体91在设计上预期理想的所述透光封装部95的表面是呈水平的。然而，由于所述透光封装部95的材质硬化后的收缩，加上所述壳体91的凹部911边缘对透光封装部95的表面张力的作用，实际上所述透光封装部95的表面在其中心部是呈现凹陷的状态。由于所述透光封装部95的折射率大于空气的折射率，在光线由内向外经过所述透光封装部95表面与空气的交界面时，会有部分的光线发生全反射的现象。即使这些发生全反射的光线，经过所述凹部911壁面的反射后，再从所述透光封装部95射出，这样都会使光线发生衰减，影响了光线的出光率。
请参照图2，图2揭示另一种现有发光二极管构造的剖视图。如图2所示，图2的发光二极管构造90’与图1的发光二极管构造90大致相同，其具有壳体91’、凹部911’、第一电极片92’、第二电极片93’、发光二极管芯片94’、透光封装部95’及引线96’；二者的不同之处在于：图2的发光二极管构造90’的透光封装部95’具有一球形表面的设计。这样避免了上述光线因为全反射的作用而发生衰减的情况，并可更有效率地以大视角将光线射出。然而，所述发光二极管构造90’在制作时，需先以封装材料填满所述透光封装部95’内部的空间952’ ，再以塑胶射出成型的方式制作所述透光封装部95’凸出的外部951’或者再组合预先制作的外部951’。因此，这将相对提高所述透光封装部95’的制作成本。并且，由于所述透光封装部95’凸出所述壳体91’，因此使所述透光封装部95’容易受损，并且不利于所述发光二极管构造90’的后续SMT或其他制造工艺。
故，有必要提供一种发光二极管构造及其制造方法，以解决现有技术所存在的问题。
 技术问题
本发明的目的之一是提供一种可以大视角将光线射出并提高光线的出光效率发光二极管构造。
本发明的目的之二是提供一种可以大视角将光线射出并提高光线的出光效率发光二极管构造的制造方法。
 技术解决方案
为达上述目的，本发明提供一种发光二极管构造，其包含：
一壳体，所述壳体具有一凹部及凸台,所述凸台设于所述壳体的周缘；
一发光二极管芯片，设于所述壳体的凹部内；
一透光封装部，封装所述壳体的凹部，所述透光封装部的边缘与所述凹部的边缘重合，并包覆所述凹部内的发光二极管芯片，且具有高度小于所述凸台的球形表面，所述发光二极管芯片位于所述透光封装部的球形表面的球心位置或接近球心的位置。
在本发明的一实施例中，所述凸台位于所述凹部的相对两侧或位于所述凹部的四周且包围所述凹部。
在本发明的一实施例中，所述透光封装部的材料是硅胶树脂或掺有磷光剂的硅胶树脂。
为达上述目的，本发明另提供一种发光二极管构造，其包含：
一壳体，所述壳体具有一凹部及凸台,所述凸台设于所述壳体的周缘；
一发光二极管芯片，设于所述壳体的凹部内；
一透光封装部，封装所述壳体的凹部，所述透光封装部的边缘与所述凹部的边缘重合，并包覆所述凹部内的发光二极管芯片，且具有高度小于所述凸台的球形表面。
在本发明的一实施例中，所述发光二极管芯片设于所述壳体凹部内的中心位置，并且所述透光封装部的球形表面最高点位在所述发光二极管芯片中心的正上方。
在本发明的一实施例中，所述发光二极管芯片位于所述透光封装部的球形表面的球心位置或接近球心的位置。
在本发明的一实施例中，所述凸台位于所述凹部的相对两侧或位于所述凹部的四周且包围所述凹部。
在本发明的一实施例中，所述透光封装部的材料是硅胶树脂或掺有磷光剂的硅胶树脂。
为达上述目的，本发明再提供一种发光二极管构造的制造方法，其包含以下步骤：
准备一壳体，所述壳体具有一凹部及凸台，所述凹部内设有一发光二极管芯片，所述凸台设于所述壳体的周缘；
准备一点胶工具，装有封装材料且位于所述凹部的上方；及
所述点胶工具向所述凹部注入封装材料以形成一透光封装部，所述透光封装部的边缘与所述凹部的边缘重合，并包覆所述凹部内的发光二极管芯片，且具有高度小于所述凸台的球形表面。
在本发明的一实施例中，所述发光二极管芯片设于所述壳体凹部内的中心位置，所述点胶工具位在所述发光二极管芯片中心的上方。
在本发明的一实施例中，所述点胶工具注入的封装材料的体积大于所述壳体凹部的容积。
在本发明的一实施例中，所述发光二极管芯片位于所述透光封装部的球形表面的球心位置或接近球心的位置。
在本发明的一实施例中，将所述凸台设置于所述凹部的相对两侧或设置于所述凹部的四周且包围所述凹部。
在本发明的一实施例中，所述封装材料是硅胶树脂或掺有磷光剂的硅胶树脂。
本发明提供一种发光二极管构及其制造方法，所述发光二极管构包含一壳体、一发光二极管芯片及一透光封装部。所述壳体具有一凹部及至少一凸台，所述发光二极管芯片设于所述凹部内。所述透光封装部通过一点胶工具向所述凹部注入封装材料以形成一透光封装部，所述透光封装部的边缘与所述凹部的边缘重合，并包覆所述凹部内的发光二极管芯片，且具有高度小于所述凸台的球形表面。本发明发光二极管构造的发光二极管芯片通过所述透光封装部的球形表面，可以大视角将光线射出，并提高光线的出光效率。此外，因为所述凸台的高度是大于所述透光封装部的高度，这样除了能有利于所述发光二极管构造的后续SMT等其他制造工艺外，也起到保护所述发光二极管构造的透光封装部的作用，避免在后续制造工艺中损坏。
 有益效果
本发明发光二极管构造及其制造方法，透光封装部通过点胶工具向发光二极管构造壳体的凹部注入封装材料以形成透光封装部，所述透光封装部的边缘与所述凹部的边缘重合，并包覆所述凹部内的发光二极管芯片，且形成一球形表面。本发明发光二极管构造的发光二极管芯片通过所述透光封装部的球形表面，可以大视角将光线射出，并提高光线的出光效率。
附图说明
图1：一种现有发光二极管构造的剖视图。
图2：另一种现有发光二极管构造的剖视图。
图3：本发明发光二极管构造的第一实施例的剖视图。
图4：本发明发光二极管构造的第一实施例的制造方法流程图。
图5A-5D：本发明发光二极管构造的第一实施例的制造方法流程示意图。
图6：本发明发光二极管构造的第二实施例的剖视图。
 本发明的最佳实施方式
为让本发明上述目的、特征及优点更明显易懂，下文特举本发明较佳实施例，并配合附图，作详细说明。
请参照图3，图3为本发明发光二极管构造的第一实施例的剖视图。所述发光二极管构造10包含：一壳体11、一第一电极片12、一第二电极片13、一发光二极管芯片14及一透光封装部15。所述壳体11具有一凹部111，所述凹部111是一凹陷构造，其形状可依产品需求而对应调整，所述壳体11的周缘形成有凸台16，该凸台16位于凹部111的相对两侧。
所述第一电极片12的一部分设于所述凹部111，其另一部份延伸至所述壳体11外，以用于与外部的电性连接。所述第二电极片13的一部分设于所述凹部111，其另一部份延伸至所述壳体11外，以用于与外部的电性连接。所述发光二极管芯片14具有第一电极（未图示）及第二电极（未图示），该发光二极管芯片14设于所述凹部111之内，且该发光二极管芯片14位于所述凹部111的中央。所述发光二极管芯片14第一电极电性连接于所述第一电极片12上，其第二电极通过一引线17电性连接于所述第二电极片13。
所述透光封装部15是通过一点胶工艺来封装所述壳体11的凹部111，以包覆所述凹部111内的发光二极管芯片14、部分第一电极片12、部分第二电极片13。再者，通过对所述点胶工艺点胶量的控制，及利用所述透光封装部15表面张力的作用，所述透光封装部15的边缘与所述凹部111的边缘重合，并且形成了一球形表面。其中，所述透光封装部15的高度，也就是所述球形表面最高点151的高度是大于所述凹部111边缘的高度，并且小于所述凸台16的高度。
如图3所示，所述发光二极管芯片14优选的是设于所述壳体11凹部111内的中心位置，并且所述透光封装部15的球形表面最高点151是位在所述发光二极管芯片14中心的正上方。因此，本发明发光二极管构造10的发光二极管芯片14通过所述透光封装部15的球形表面，可以大视角将光线射出，并提高光线的出光效率。
另外，所述透光封装部15的材料优选是硅胶树脂(Silicone Resin)，或者是掺有磷光剂(Phosphor)的硅胶树脂。其中，硅胶树脂具有较佳的封装性及透光性，而加入磷光剂的硅胶树脂可提高整体发光效率。
此外，因为所述凸台16的高度是大于所述透光封装部15的高度，这样除了能有利于所述发光二极管构造10的后续SMT等其他制造工艺外，也起到保护所述发光二极管构造10的透光封装部15的作用，避免在后续制造工艺中损坏。然而，本发明第一实施例所揭示的所述凸台16虽然有两个，但本发明并不限制所述凸台16的数量与形状，该凸台16也可以形成于该凹部111的四周并包围该凹部111，使用者可依实际需要来设置所述凸台16的数量或形状，以提供制造工艺的吸附使用的需求，以及产生保护所述透光封装部15的目的。
请再参照图4及图5A-5D所示，图4揭示本发明发光二极管构造的第一实施例的制造方法流程图；图5A-5D揭示本发明发光二极管构造的第一实施例的制造方法流程示意图。
步骤S01：准备一壳体11，所述壳体具有凹部111及凸台16，所述壳体11的凹部111内设有一发光二极管芯片14，所述壳体11的周缘形成所述凸台16，所述凸台16设置于所述凹部111的相对两侧或位于所述凹部111的四周且包围所述凹部111。
步骤S02：准备一点胶工具20，所述点胶工具20装有封装材料21且位于所述凹部111的上方。
步骤S03：所述点胶工具20向所述凹部111注入一适当体积的封装材料21以形成一透光封装部。此时，通过对所述点胶工具20输出的封装材料21的精确控制，所述点胶工具20所注入的封装材料21的体积是大于所述壳体11的凹部111的容积。并且，通过所述封装材料21表面张力作用，所述封装材料21凝固形成的所述透光封装部15的边缘与所述凹部111的边缘重合，并包覆所述凹部111内的发光二极管芯片14、部分第一电极片12及部分第二电极片13，且所述透光封装部15具有高度小于所述凸台16的球形表面。
优选的，所述发光二极管芯片14是设于所述壳体11凹部111内的中心位置，所述点胶工具20是位在所述发光二极管芯片14中心的上方。并且，所述封装用材料21优选是硅胶树脂(Silicone Resin)，或者是掺有磷光剂(Phosphor)的硅胶树脂。
请参照图6所示，图6揭示本发明发光二极管构造的第二实施例的剖视图。本实施例的发光二极管构造20与第一实施例的发光二极管构造10相似，因此沿用相同的元件名称，其具有壳体21、凹部211、第一电极片22、第二电极片23、发光二极管芯片24、透光封装部25、凸台26及引线27；但二者的不同之处在于：所述透光封装部25形成的球形表面最高点251高于第一实施例的球形表面最高点151。所述透光封装部25的球形表面最高点251位于所述发光二极管芯片24中心的正上方，并且所述发光二极管芯片24位于所述透光封装部25的球形表面的球心252的位置或接近球心252的位置，此时，所述透光封装部25的球形表面的半径为R。因此，通过将所述发光二极管芯片24设置于所述透光封装部25的球形表面的球心252位置，将可进一步提高整体光线的出光效率。
综上所述，本发明发光二极管构造及其制造方法，透光封装部通过点胶工具向发光二极管构造壳体的凹部注入封装材料以形成透光封装部，所述透光封装部的边缘与所述凹部的边缘重合，并包覆所述凹部内的发光二极管芯片，且形成一球形表面。本发明发光二极管构造的发光二极管芯片通过所述透光封装部的球形表面，可以大视角将光线射出，并提高光线的出光效率。
本发明已由上述相关实施例加以描述，然而上述实施例仅为实施本发明的范例。必需指出的是，已公开的实施例并未限制本发明的范围。相反地，包含于权利要求书的精神及范围的修改及均等设置均包括于本发明的范围内。
 本发明的实施方式
工业实用性
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Claims (14)

  1. 一种发光二极管构造，其特征在于：所述发光二极管构造包含：
    一壳体，所述壳体具有一凹部及凸台,所述凸台设于所述壳体的周缘；
    一发光二极管芯片，设于所述壳体的凹部内；及
    一透光封装部，封装所述壳体的凹部，所述透光封装部的边缘与所述凹部的边缘重合，并包覆所述凹部内的发光二极管芯片，且具有高度小于所述凸台的球形表面，所述发光二极管芯片位于所述透光封装部的球形表面的球心位置或接近球心的位置。
  2. 如权利要求1所述的发光二极管构造，其特征在于：所述凸台位于所述凹部的相对两侧或位于所述凹部的四周且包围所述凹部。
  3. 如权利要求1所述的发光二极管构造，其特征在于：所述透光封装部的材料是硅胶树脂或掺有磷光剂的硅胶树脂。
  4. 一种发光二极管构造，其特征在于：所述发光二极管构造包含：
    一壳体，所述壳体具有一凹部及凸台，所述凸台设于所述壳体的周缘；
    一发光二极管芯片，设于所述壳体的凹部内；及
    一透光封装部，封装所述壳体的凹部，所述透光封装部的边缘与所述凹部的边缘重合，并包覆所述凹部内的发光二极管芯片，且具有高度小于所述凸台的球形表面。
  5. 如权利要求4所述的发光二极管构造，其特征在于：所述发光二极管芯片设于所述壳体凹部内的中心位置，并且所述透光封装部的球形表面最高点位在所述发光二极管芯片中心的正上方。
  6. 如权利要求5所述的发光二极管构造，其特征在于：所述发光二极管芯片位于所述透光封装部的球形表面的球心位置或接近球心的位置。
  7. 如权利要求4所述的发光二极管构造，其特征在于：所述凸台位于所述凹部的相对两侧或位于所述凹部的四周且包围所述凹部。
  8. 如权利要求4所述的发光二极管构造，其特征在于：所述透光封装部的材料是硅胶树脂或掺有磷光剂的硅胶树脂。
  9. 一种发光二极管构造的制造方法，其特征在于：所述发光二极管构造的制造方法包含以下步骤：
    准备一壳体，所述壳体具有一凹部及凸台，所述凹部内设有一发光二极管芯片，所述凸台设于所述壳体的周缘；
    准备一点胶工具，装有封装材料且位于所述凹部的上方；及
    所述点胶工具向所述凹部注入封装材料以形成一透光封装部，所述透光封装部的边缘与所述凹部的边缘重合，并包覆所述凹部内的发光二极管芯片，且具有高度小于所述凸台的球形表面。
  10. 如权利要求9所述的发光二极管构造的制造方法，其特征在于：所述发光二极管芯片设于所述壳体凹部内的中心位置，所述点胶工具位于所述发光二极管芯片中心的上方。
  11. 如权利要求9所述的发光二极管构造的制造方法，其特征在于：所述点胶工具注入的封装材料的体积大于所述壳体凹部的容积。
  12. 如权利要求9所述的发光二极管构造的制造方法，其特征在于：所述发光二极管芯片位于所述透光封装部的球形表面的球心位置或接近球心的位置。
  13. 如权利要求9所述的发光二极管构造的制造方法，其特征在于：将所述凸台设置于所述凹部的相对两侧或设置于所述凹部的四周且包围所述凹部。
  14. 如权利要求9所述的发光二极管构造的制造方法，其特征在于：所述封装材料是硅胶树脂或掺有磷光剂的硅胶树脂。
PCT/CN2011/072813 2011-04-08 2011-04-14 发光二极管构造及其制造方法 WO2012136009A1 (zh)

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