WO2012128482A2 - Method for duplicating pattern on cylindrical mold using uv imprint technique - Google Patents

Method for duplicating pattern on cylindrical mold using uv imprint technique Download PDF

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Publication number
WO2012128482A2
WO2012128482A2 PCT/KR2012/001468 KR2012001468W WO2012128482A2 WO 2012128482 A2 WO2012128482 A2 WO 2012128482A2 KR 2012001468 W KR2012001468 W KR 2012001468W WO 2012128482 A2 WO2012128482 A2 WO 2012128482A2
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WO
WIPO (PCT)
Prior art keywords
pattern
mold
stamp cylinder
imprint technique
flat plate
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PCT/KR2012/001468
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French (fr)
Korean (ko)
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WO2012128482A3 (en
Inventor
신명동
김유성
허지원
정상효
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(주)뉴옵틱스
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Publication of WO2012128482A2 publication Critical patent/WO2012128482A2/en
Publication of WO2012128482A3 publication Critical patent/WO2012128482A3/en

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C35/00Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
    • B29C35/02Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
    • B29C35/08Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
    • B29C35/0805Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00Moulds or cores; Details thereof or accessories therefor
    • B29C33/42Moulds or cores; Details thereof or accessories therefor characterised by the shape of the moulding surface, e.g. ribs or grooves
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00Moulds or cores; Details thereof or accessories therefor
    • B29C33/76Cores
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41CPROCESSES FOR THE MANUFACTURE OR REPRODUCTION OF PRINTING SURFACES
    • B41C1/00Forme preparation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41CPROCESSES FOR THE MANUFACTURE OR REPRODUCTION OF PRINTING SURFACES
    • B41C3/00Reproduction or duplicating of printing formes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C35/00Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
    • B29C35/02Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
    • B29C35/08Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
    • B29C35/0805Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation
    • B29C2035/0827Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation using UV radiation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C35/00Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
    • B29C35/02Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
    • B29C35/08Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
    • B29C35/0888Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using transparant moulds
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • B29C59/04Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing using rollers or endless belts

Definitions

  • the present invention relates to a method of duplicating a pattern on a cylindrical mold by using a UV imprint technique, and more particularly, by replicating a pattern using a UV imprint technique on a cylindrical mold, a nano-scale pattern can be generated through a simple process.
  • the present invention relates to a method of duplicating a pattern in a cylindrical mold using a UV imprint technique.
  • the display device includes a pixel electrode and a thin film transistor for each pixel that is a basic unit of the screen, and the pixel electrode is formed of a conductive layer pattern.
  • a protective film pattern is formed between the pixel electrode and the thin film transistor, and the protective film is formed of an insulating film pattern.
  • a technology for generating a pattern using a cylindrical mold has been developed, and when a pattern is generated using a cylindrical mold, it is advantageous for a large area using a seamless cylindrical mold and has an advantage of ensuring uniformity of the pattern.
  • the printing technique has a problem that there is a technical difficulty in forming a pattern of nano units.
  • the present invention devised to solve the problems of the prior art as described above by duplicating a pattern using a UV imprint technique in a cylindrical mold, by using a UV imprint technique that can generate a nano-scale pattern through a simple process Its purpose is to provide a method of duplicating a pattern in a mold.
  • the object of the present invention is a UV curing agent is applied to the pattern of the original mold, the stamp cylinder is rotated in contact with the original mold to duplicate the pattern of the original mold, the first step of irradiating the UV light source to the stamp cylinder; A second step of etching the stamp cylinder in which the pattern of the original mold is duplicated; A UV curing agent is applied to the pattern of the stamp cylinder, and the replica die replicates the pattern of the stamp cylinder while rotating in contact with the stamp cylinder, and irradiates a UV light source to the replica mold to transfer the pattern of the stamp cylinder to the replica mold. Replicating the third step; And a fourth step of etching the replica mold having the pattern of the stamp cylinder replicated, using a UV imprint technique.
  • another object of the present invention is a first step of applying a UV curing agent to the plate to the plate and the original mold to rotate in contact with the original mold to duplicate the pattern of the original mold on the plate, and irradiating the UV light source on the plate; A second step of etching the flat plate on which the pattern of the original mold is duplicated; A UV curing agent is applied to the pattern of the flat plate, and the replication mold replicates the pattern of the flat plate while rotating in contact with the flat plate; step; And a fourth step of etching the replica mold having the pattern of the plate replicated thereon, using a UV imprint technique.
  • the stamp cylinder of this invention is a transparent material.
  • the UV light source of this invention in the inside or the outside of the said stamp cylinder.
  • the method of duplicating a pattern in a cylindrical mold using the UV imprint technique of the present invention has an effect of generating a nano-scale pattern through a simple process by duplicating the pattern in a cylindrical mold using the UV imprint technique. .
  • the present invention has another effect of making the transfer of the pattern uniform by duplicating the pattern in the cylindrical mold by using the UV imprint technique on the flat plate.
  • FIG. 1 is a process diagram of a method for duplicating a pattern in a cylindrical mold using a UV imprint technique according to an embodiment of the present invention
  • FIG. 2 is a process diagram of a method of duplicating a pattern in a cylindrical mold using a UV imprint technique according to another embodiment of the present invention
  • FIG. 3 is a process chart of an etching process according to an embodiment of the present invention.
  • FIG. 4 is a view showing an ICP process chamber for a plasma etching process according to an embodiment of the present invention.
  • FIG. 1 is a process diagram of a method for duplicating a pattern in a cylindrical mold using a UV imprint technique in accordance with an embodiment of the present invention.
  • the cylindrical mold 170 to which the pattern is to be duplicated is referred to as a duplicate mold 170, and the pattern is engraved so that the cylindrical mold 110 to duplicate the pattern to the duplicate mold 170 is an original mold. Referred to as (110).
  • the UV curing agent 120 is applied between the original mold 110 and the stamp cylinder 130, and the UV light source 140 is irradiated to the stamp cylinder 130 to which the UV curing agent 120 is applied.
  • the pattern 135 is generated in the stamp cylinder 130 when the UV curing agent 120 is irradiated.
  • the UV light source 140 may irradiate the stamp cylinder 130 from the inside or outside the stamp cylinder 130, when irradiating from the inside, the cylinder 130 is made of a transparent material to effectively transmit light, It is preferable to configure with a material such as quartz or glass, but is not limited thereto.
  • the portion of the stamp cylinder 130, which is not the pattern 135 is not printed, is etched 150 to complete the stamp cylinder 160 having the pattern engraved thereon.
  • the UV light source 140 is irradiated with the UV curing agent 120 while applying the UV curing agent 120 to generate the pattern 175 on the replication mold 170 using the stamped cylinder 160 having the pattern engraved thereon.
  • the pattern 175 generated by 120 is cured.
  • the replica mold 170 in which the pattern 175 is generated is etched 180 in which the pattern 175 is not formed to complete the replica mold in which the pattern is engraved (190).
  • the etching (150, 180) is preferably dry etching using a plasma.
  • the pattern 175 may generate up to nano-patterns.
  • FIG. 2 is a process diagram of a method for duplicating a pattern in a cylindrical mold using a UV imprint technique in accordance with another embodiment of the present invention. 2, a method of duplicating a pattern of an original mold by using a flat plate.
  • the UV curing agent 240 is applied to the flat plate 220, and the pattern 215 is generated on the flat plate 220 while rotating the original mold 210 having the pattern in contact with the flat plate 220.
  • the UV light source 230 is irradiated onto the plate 220 so that the pattern 215 generated on the plate 220 may be cured in response to UV.
  • the flat plate 220 is preferably a transparent material such as quartz, glass, etc. for effective irradiation of the UV light source 230, but is not limited thereto.
  • a portion 250 on which the pattern 215 is not printed is etched to complete the flat plate 260 having the pattern engraved thereon.
  • the UV curing agent 240 is applied to the patterned flat plate 260, and the pattern 275 of the flat plate 260 is printed on the copying mold 270 while rotating the replica mold 270 in contact with the flat plate 260. .
  • the UV light source 230 is irradiated to cure the pattern 275 made of the UV curing agent 240 printed on the replication mold 270.
  • the UV light source 230 is preferably irradiated at a portion symmetrical with the portion where the flat plate 260 and the original mold 210 or the replication mold 270 abuts.
  • the replication mold 270 in which the pattern 275 is generated is etched 280 to etch the pattern on the replication mold 290.
  • the etching (250, 280) is preferably dry etching using a plasma.
  • FIG. 3 is a process diagram of an etching process according to an embodiment of the present invention.
  • the UV light source 330 is irradiated and subjected to an etching process.
  • a UV light source is irradiated onto the replica die 310 to react with a UV curing agent in which a pattern is formed, and a portion where the pattern 340 is printed is cured, and a portion where the pattern 340 is not printed is reacted by UV.
  • the portion in which the reaction occurs is precisely etched (320).
  • FIG. 4 is a view showing an ICP process chamber for a plasma etching process according to an embodiment of the present invention.
  • the etching process may be performed by dry etching using plasma.
  • 4 is an inductively coupled plasma (ICP) process chamber 400 having a built-in antenna.
  • ICP inductively coupled plasma
  • the inductively coupled plasma process chamber 400 is replicated to the outer wall 405, the support means 410 and the support means 410 insulated from the outer wall 405 of the vacuum chamber 400 made of a conductor connected to ground.
  • the replica die 420 is etched using the inductively coupled plasma process chamber 400, and etching is possible up to nano units.
  • the replication mold 420 may be made of a conductive material, and one side of the replication mold 420 is connected to the RF power source 425 through the impedance matching network 415 and the other side thereof through the termination capacitor 430. As a result, the negative RF magnetic bias is applied to the surface of the replication mold 420 when the plasma 435 is discharged. In this case, the frequency of the RF power source 425 may be selected such that the standing wave effect and the transmission line effect are minimized according to the antenna substrate.
  • the insulated support means 410 may be grounded to avoid discharge voltages due to standing wave effects.
  • the temperature of the replication mold 420 may be adjusted, and the interior of the replication mold 420 is separated from each other with the process chamber through vacuum sealing (445). .
  • RF power is applied to the replica die 420 through the impedance matching network 415, and resonance occurs in the RF power, thereby forming a plasma 435 in the process chamber 400. .
  • a negative DC power magnetic bias is formed in the replica die 420 by a difference in movement of ions and electrons, and the replica die 420 is etched using acceleration of ions in the formed plasma 435.

Abstract

The present invention relates to a method for duplicating a pattern on a cylindrical mold using a UV imprint technique, and more specifically, to a method for duplicating a pattern on a cylindrical mold using a UV imprint technique, which enables the generation of a nano-unit pattern through a simple process, by duplicating a pattern using a UV imprint technique on a cylindrical mold. The method for duplicating a pattern on a cylindrical mold using a UV imprint technique comprises: a first step for coating a UV hardener on the pattern of an original mold, for a stamp cylinder to duplicate the pattern of the original mold while rotating in contact with the original mold, and for irradiating a UV light source on the stamp cylinder; a second step for etching the stamp cylinder duplicated with the pattern of the original mold; a third step for coating the UV hardener on the pattern of the stamp cylinder, for a duplicate mold to duplicate the pattern of the stamp cylinder while rotating in contact with the stamp cylinder, and for irradiating a UV light source on the duplicate mold and duplicating the pattern of the stamp cylinder on the duplicate mold; and a fourth step for etching the duplicate mold duplicated with the pattern of the stamp cylinder.

Description

UV 임프린트 기법을 이용하여 원통 금형에 패턴을 복제하는 방법How to duplicate a pattern on a cylindrical mold using the UV imprint technique
본 발명은 UV 임프린트 기법을 이용하여 원통 금형에 패턴을 복제하는 방법에 관한 것으로, 보다 자세하게는 원통 금형에 UV 임프린트 기법을 이용하여 패턴을 복제함으로써, 나노 단위의 패턴을 간단한 공정을 통해 생성할 수 있는 UV 임프린트 기법을 이용하여 원통 금형에 패턴을 복제하는 방법에 관한 것이다.The present invention relates to a method of duplicating a pattern on a cylindrical mold by using a UV imprint technique, and more particularly, by replicating a pattern using a UV imprint technique on a cylindrical mold, a nano-scale pattern can be generated through a simple process. The present invention relates to a method of duplicating a pattern in a cylindrical mold using a UV imprint technique.
영상을 표시하는 표시장치나 데이터를 저장하는 메모리 장치와 같은 반도체 장치에는 다양한 패턴이 사용된다. 예컨대, 표시장치에는 화면의 기본 단위인 각 화소별로 화소전극과 박막트랜지스터가 구비되며, 화소전극은 도전막 패턴으로 이루어진다. 또한 화소전극과 박막트랜지스터의 사이에는 보호막 패턴이 형성되는데, 보호막은 절연막 패턴으로 이루어진다.Various patterns are used in semiconductor devices such as a display device for displaying an image or a memory device for storing data. For example, the display device includes a pixel electrode and a thin film transistor for each pixel that is a basic unit of the screen, and the pixel electrode is formed of a conductive layer pattern. In addition, a protective film pattern is formed between the pixel electrode and the thin film transistor, and the protective film is formed of an insulating film pattern.
종래에는 평판에 스탬프를 통해 인쇄하는 방법이 사용되었다. 평판에 스탬프를 통해 인쇄할 경우, 대면적에 적용시 패턴의 균일도에 문제가 발생하고, 제작 비용이 상승하는 문제점이 있었다.Conventionally, a method of printing a stamp on a flat plate has been used. When printing through a stamp on a flat plate, when applied to a large area, a problem occurs in the uniformity of the pattern, there was a problem that the manufacturing cost increases.
이에 원통 금형을 이용하여 패턴을 생성하는 기술이 개발되었으며, 원통 금형으로 패턴을 생성하면 이음매 없는 원통 금형을 이용한 대면적화에 유리하고, 패턴의 균일도를 확보할 수 있다는 장점이 있다.Accordingly, a technology for generating a pattern using a cylindrical mold has been developed, and when a pattern is generated using a cylindrical mold, it is advantageous for a large area using a seamless cylindrical mold and has an advantage of ensuring uniformity of the pattern.
이러한 원통 금형에 패턴을 생성하는 기술로는 패턴이 새겨진 필름 또는 시트를 복제하고자 하는 원통 금형에 고정하는 것이 일반적이나, 필름 또는 시트를 고정하는 부분의 이음매가 발생하기 때문에 평판에 스탬프를 통해 인쇄할 때, 발생하는 문제점이 발생하게 되고, 롤투롤 공정에서 원통 금형의 연속 회전에 따른 한계가 발생하게 되는 문제점이 있다.As a technique for generating a pattern on the cylindrical mold, it is common to fix the patterned film or sheet to the cylindrical mold to be duplicated. When the problem occurs, there is a problem that occurs due to the continuous rotation of the cylindrical mold in the roll-to-roll process.
이로 인해 원통 금형을 이용하여 원통 금형에 패턴을 생성하는 방법이 사용되었으며, 인쇄기법을 이용하여 패턴의 잉크 전이를 이용하였다. 그러나 인쇄기법은 나노 단위의 패턴을 형성하는데 기술적 어려움이 있는 문제점이 있다.For this reason, a method of generating a pattern in the cylindrical mold using the cylindrical mold was used, and ink transfer of the pattern was used using a printing technique. However, the printing technique has a problem that there is a technical difficulty in forming a pattern of nano units.
상기와 같은 종래 기술의 문제점을 해결하기 위하여 안출된 본 발명은 원통 금형에 UV 임프린트 기법을 이용하여 패턴을 복제함으로써, 나노 단위의 패턴을 간단한 공정을 통해 생성할 수 있는 UV 임프린트 기법을 이용하여 원통 금형에 패턴을 복제하는 방법을 제공함에 그 목적이 있다.The present invention devised to solve the problems of the prior art as described above by duplicating a pattern using a UV imprint technique in a cylindrical mold, by using a UV imprint technique that can generate a nano-scale pattern through a simple process Its purpose is to provide a method of duplicating a pattern in a mold.
본 발명의 상기 목적은 원본 금형의 패턴에 UV 경화제가 도포되고, 스탬프 원통은 상기 원본 금형과 맞닿아 회전하면서 상기 원본 금형의 패턴을 복제하며, 상기 스탬프 원통에 UV 광원을 조사하는 제 1단계; 상기 원본 금형의 패턴이 복제된 상기 스탬프 원통을 식각하는 제 2단계; 상기 스탬프 원통의 패턴에 UV 경화제가 도포되고, 복제 금형은 상기 스탬프 원통과 맞닿아 회전하면서 상기 스탬프 원통의 패턴을 복제하며, 상기 복제 금형에 UV 광원을 조사하여 상기 스탬프 원통의 패턴을 복제 금형에 복제하는 제 3단계; 및 상기 스탬프 원통의 패턴이 복제된 상기 복제 금형을 식각하는 제 4단계를 포함하는 UV 임프린트 기법을 이용하여 원통 금형에 패턴을 복제하는 방법에 의해 달성된다.The object of the present invention is a UV curing agent is applied to the pattern of the original mold, the stamp cylinder is rotated in contact with the original mold to duplicate the pattern of the original mold, the first step of irradiating the UV light source to the stamp cylinder; A second step of etching the stamp cylinder in which the pattern of the original mold is duplicated; A UV curing agent is applied to the pattern of the stamp cylinder, and the replica die replicates the pattern of the stamp cylinder while rotating in contact with the stamp cylinder, and irradiates a UV light source to the replica mold to transfer the pattern of the stamp cylinder to the replica mold. Replicating the third step; And a fourth step of etching the replica mold having the pattern of the stamp cylinder replicated, using a UV imprint technique.
또한, 본 발명의 다른 목적은 평판과 원본 금형이 맞닿아 회전하여 상기 원본 금형의 패턴을 상기 평판에 복제하기 위해 상기 평판에 UV 경화제가 도포되고, 상기 평판에 UV 광원을 조사하는 제 1단계; 상기 원본 금형의 패턴이 복제된 상기 평판을 식각하는 제 2단계; 상기 평판의 패턴에 UV 경화제가 도포되고, 복제 금형은 상기 평판과 맞닿아 회전하면서 상기 평판의 패턴을 복제하며, 상기 복제 금형에 UV 광원을 조사하여 상기 평판의 패턴을 복제 금형에 복제하는 제 3단계; 및 상기 평판의 패턴이 복제된 상기 복제 금형을 식각하는 제 4단계를 포함하는 UV 임프린트 기법을 이용하여 원통 금형에 패턴을 복제하는 방법에 의해 달성된다.In addition, another object of the present invention is a first step of applying a UV curing agent to the plate to the plate and the original mold to rotate in contact with the original mold to duplicate the pattern of the original mold on the plate, and irradiating the UV light source on the plate; A second step of etching the flat plate on which the pattern of the original mold is duplicated; A UV curing agent is applied to the pattern of the flat plate, and the replication mold replicates the pattern of the flat plate while rotating in contact with the flat plate; step; And a fourth step of etching the replica mold having the pattern of the plate replicated thereon, using a UV imprint technique.
또한, 본 발명의 스탬프 원통은 투명 재질인 것이 바람직하다.Moreover, it is preferable that the stamp cylinder of this invention is a transparent material.
또한, 본 발명의 UV 광원은 상기 스탬프 원통의 내부 또는 외부에서 조사하는 것이 바람직하다.Moreover, it is preferable to irradiate the UV light source of this invention in the inside or the outside of the said stamp cylinder.
또한, 본 발명의 유도형 결합 플라즈마를 이용하여 건식 식각을 하는 것이 바람직하다.In addition, it is preferable to perform dry etching using the inductively coupled plasma of the present invention.
따라서, 본 발명의 UV 임프린트 기법을 이용하여 원통 금형에 패턴을 복제하는 방법은 원통 금형에 UV 임프린트 기법을 이용하여 패턴을 복제함으로써, 나노 단위의 패턴을 간단한 공정을 통해 생성할 수 있는 효과가 있다.Therefore, the method of duplicating a pattern in a cylindrical mold using the UV imprint technique of the present invention has an effect of generating a nano-scale pattern through a simple process by duplicating the pattern in a cylindrical mold using the UV imprint technique. .
또한, 본 발명은 평판에 UV 임프린트 기법을 이용하여 원통 금형에 패턴을 복제하여 패턴의 전사를 균일하게 하는 다른 효과가 있다.In addition, the present invention has another effect of making the transfer of the pattern uniform by duplicating the pattern in the cylindrical mold by using the UV imprint technique on the flat plate.
도 1은 본 발명의 실시예에 따른 UV 임프린트 기법을 이용하여 원통 금형에 패턴을 복제하는 방법의 공정도,1 is a process diagram of a method for duplicating a pattern in a cylindrical mold using a UV imprint technique according to an embodiment of the present invention;
도 2는 본 발명의 다른 실시예에 따른 UV 임프린트 기법을 이용하여 원통 금형에 패턴을 복제하는 방법의 공정도,2 is a process diagram of a method of duplicating a pattern in a cylindrical mold using a UV imprint technique according to another embodiment of the present invention;
도 3은 본 발명의 실시예에 따른 식각 공정의 공정도,3 is a process chart of an etching process according to an embodiment of the present invention,
도 4는 본 발명의 실시예에 따른 플라즈마 식각 공정을 위한 ICP 공정 챔버를 나타낸 도면이다.4 is a view showing an ICP process chamber for a plasma etching process according to an embodiment of the present invention.
본 명세서 및 청구범위에 사용된 용어나 단어는 통상적이거나 사전적인 의미로 한정해서 해석되어서는 아니되며, 발명자는 그 자신의 발명을 가장 최선의 방법으로 설명하기 위해 용어의 개념을 적절하게 정의할 수 있다는 원칙에 입각하여 본 발명의 기술적 사상에 부합하는 의미와 개념으로 해석되어야만 한다.The terms or words used in this specification and claims are not to be construed as being limited to their ordinary or dictionary meanings, and the inventors may appropriately define the concept of terms in order to best describe their invention. It should be interpreted as meaning and concept corresponding to the technical idea of the present invention based on the principle that the present invention.
따라서, 본 명세서에 기재된 실시예와 도면에 도시된 구성은 본 발명의 가장 바람직한 일 실시예에 불과할 뿐이고 본 발명의 기술적 사상을 모두 대변하는 것은 아니므로, 본 출원시점에 있어서 이들을 대체할 수 있는 다양한 균등물과 변형예들이 있을 수 있음을 이해하여야 한다.Therefore, the embodiments described in the specification and the drawings shown in the drawings are only the most preferred embodiment of the present invention and do not represent all of the technical idea of the present invention, various modifications that can be replaced at the time of the present application It should be understood that there may be equivalents and variations.
이하 첨부된 도면을 참조하여 본 발명의 바람직한 실시예를 상세히 설명하기로 한다. Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.
도 1은 본 발명의 실시예에 따른 UV 임프린트 기법을 이용하여 원통 금형에 패턴을 복제하는 방법의 공정도이다. 도 1을 참조하면, 패턴을 복제해야 할 원통 금형(170)을 복제 금형(170)이라 지칭하고, 패턴이 새겨져 있어서 복제 금형(170)에 패턴을 복제하기 위한 원통 금형(110)을 원본 금형(110)이라 지칭한다.1 is a process diagram of a method for duplicating a pattern in a cylindrical mold using a UV imprint technique in accordance with an embodiment of the present invention. Referring to FIG. 1, the cylindrical mold 170 to which the pattern is to be duplicated is referred to as a duplicate mold 170, and the pattern is engraved so that the cylindrical mold 110 to duplicate the pattern to the duplicate mold 170 is an original mold. Referred to as (110).
패턴이 새겨진 원본 금형(110)의 패턴을 복제하기 위해 스탬프 원통(130)을 구비하고, 원본 금형(110)과 스탬프 원통(130)을 맞닿게 회전시키도록 한다. 이때, 원본 금형(110)과 스탬프 원통(130) 사이에 UV 경화제(120)를 도포하고, UV 광원(140)을 UV 경화제(120)가 도포되는 스탬프 원통(130)에 조사한다.In order to duplicate the pattern of the original mold 110 engraved pattern is provided with a stamp cylinder 130, to rotate the original mold 110 and the stamp cylinder 130 abut. At this time, the UV curing agent 120 is applied between the original mold 110 and the stamp cylinder 130, and the UV light source 140 is irradiated to the stamp cylinder 130 to which the UV curing agent 120 is applied.
UV 경화제(120)는 UV 광원(140)이 조사되면 곧바로 경화되는 특징이 있기 때문에 UV 경화제(120)가 조사될 때 패턴이 스탬프 원통(130)에 패턴(135)이 생성된다.Since the UV curing agent 120 is hardened immediately after the UV light source 140 is irradiated, the pattern 135 is generated in the stamp cylinder 130 when the UV curing agent 120 is irradiated.
UV 광원(140)은 스탬프 원통(130) 내부 혹은 외부에서 스탬프 원통(130)을 조사할 수 있고, 내부에서 조사하는 경우에는 빛의 투과를 효과적으로 하기 위해 원통(130)을 투명한 재질로 구성하고, 쿼츠, 유리 등의 재질로 구성하는 것이 바람직하나, 이에 한정하지 않는다.The UV light source 140 may irradiate the stamp cylinder 130 from the inside or outside the stamp cylinder 130, when irradiating from the inside, the cylinder 130 is made of a transparent material to effectively transmit light, It is preferable to configure with a material such as quartz or glass, but is not limited thereto.
패턴(135)이 생성된 스탬프 원통(130)에서 패턴(135)이 인쇄된 부분이 아닌 패턴(135)이 인쇄되지 않은 부분을 식각(150)하여 패턴이 새겨진 스탬프 원통(160)을 완성한다.In the stamp cylinder 130 in which the pattern 135 is generated, the portion of the stamp cylinder 130, which is not the pattern 135 is not printed, is etched 150 to complete the stamp cylinder 160 having the pattern engraved thereon.
패턴이 새겨진 스탬프 원통(160)을 이용하여 복제 금형(170)에 패턴(175)을 생성하기 위해 UV 경화제(120)를 도포하면서 UV 광원(140)을 조사하여 복제 금형(160)에 UV 경화제(120)에 의해 생성되는 패턴(175)을 경화시킨다.The UV light source 140 is irradiated with the UV curing agent 120 while applying the UV curing agent 120 to generate the pattern 175 on the replication mold 170 using the stamped cylinder 160 having the pattern engraved thereon. The pattern 175 generated by 120 is cured.
패턴(175)이 생성된 복제 금형(170)은 패턴(175)이 생성되지 않은 부분을 식각(180)하여 패턴이 새겨진 복제 금형을 완성한다(190). 또한, 식각(150, 180)은 플라즈마를 이용한 건식 식각을 하는 것이 바람직하다.The replica mold 170 in which the pattern 175 is generated is etched 180 in which the pattern 175 is not formed to complete the replica mold in which the pattern is engraved (190). In addition, the etching (150, 180) is preferably dry etching using a plasma.
이때, 패턴(175)은 나노 단위의 패턴까지 생성할 수 있다.In this case, the pattern 175 may generate up to nano-patterns.
도 2는 본 발명의 다른 실시예에 따른 UV 임프린트 기법을 이용하여 원통 금형에 패턴을 복제하는 방법의 공정도이다. 도 2를 참조하면, 평판을 이용하여 원본 금형의 패턴을 복제하는 방법이다.2 is a process diagram of a method for duplicating a pattern in a cylindrical mold using a UV imprint technique in accordance with another embodiment of the present invention. 2, a method of duplicating a pattern of an original mold by using a flat plate.
평판(220)에 UV 경화제(240)를 도포하고, 패턴이 새겨진 원본 금형(210)을 평판(220)과 맞닿도록 회전하면서 평판(220)에 패턴(215)을 생성한다. 원본 금형(210)에 의해 패턴(215)이 생성될 때, UV 광원(230)을 평판(220)에 조사하여 평판(220)에 생성된 패턴(215)이 UV에 반응하여 경화될 수 있도록 한다. 또한, 평판(220)은 UV 광원(230)의 효과적인 조사를 위해 쿼츠, 유리 등의 투명한 재질인 것이 바람직하나, 이에 한정하지는 않는다.The UV curing agent 240 is applied to the flat plate 220, and the pattern 215 is generated on the flat plate 220 while rotating the original mold 210 having the pattern in contact with the flat plate 220. When the pattern 215 is generated by the original mold 210, the UV light source 230 is irradiated onto the plate 220 so that the pattern 215 generated on the plate 220 may be cured in response to UV. . In addition, the flat plate 220 is preferably a transparent material such as quartz, glass, etc. for effective irradiation of the UV light source 230, but is not limited thereto.
패턴(215)이 형성된 평판(220)에서 패턴(215)이 인쇄되지 않은 부분을 식각(250)하여 패턴이 새겨진 평판(260)을 완성한다.In the flat plate 220 on which the pattern 215 is formed, a portion 250 on which the pattern 215 is not printed is etched to complete the flat plate 260 having the pattern engraved thereon.
패턴이 형성된 평판(260)에 UV 경화제(240)를 도포하고, 복제 금형(270)을 평판(260)에 맞닿아 회전하면서 평판(260)의 패턴(275)이 복제 금형(270)에 인쇄된다. 이때, UV 광원(230)을 조사하여 복제 금형(270)에 인쇄되는 UV 경화제(240)로 된 패턴(275)을 경화시킨다. 또한, UV 광원(230)은 평판(260)과 원본 금형(210) 또는 복제 금형(270)이 맞닿은 부분과 대칭되는 부분에서 조사하는 것이 바람직하다.The UV curing agent 240 is applied to the patterned flat plate 260, and the pattern 275 of the flat plate 260 is printed on the copying mold 270 while rotating the replica mold 270 in contact with the flat plate 260. . At this time, the UV light source 230 is irradiated to cure the pattern 275 made of the UV curing agent 240 printed on the replication mold 270. In addition, the UV light source 230 is preferably irradiated at a portion symmetrical with the portion where the flat plate 260 and the original mold 210 or the replication mold 270 abuts.
패턴(275)이 생성된 복제 금형(270)을 식각(280)하여 복제 금형에 패턴을 새긴다(290). 또한, 식각(250, 280)은 플라즈마를 이용한 건식 식각을 하는 것이 바람직하다.The replication mold 270 in which the pattern 275 is generated is etched 280 to etch the pattern on the replication mold 290. In addition, the etching (250, 280) is preferably dry etching using a plasma.
도 3은 본 발명의 실시예에 따른 식각 공정의 공정도이다. 도 3을 참조하면, 복제 금형(310)에 UV 경화제로 패턴(340)이 복제될 때, UV 광원(330) 조사를 하고, 식각 공정을 거치게 된다.3 is a process diagram of an etching process according to an embodiment of the present invention. Referring to FIG. 3, when the pattern 340 is replicated to the replication mold 310 by the UV curing agent, the UV light source 330 is irradiated and subjected to an etching process.
복제 금형(310)에 UV 광원이 조사되어 패턴이 형성된 UV 경화제가 반응하여 패턴(340)이 인쇄된 부분은 경화되고, 패턴(340)이 인쇄되지 않은 부분은 UV에 의해 반응이 일어나게 된다. 이때, 반응이 일어난 부분을 정교하게 식각(320)하도록 한다.A UV light source is irradiated onto the replica die 310 to react with a UV curing agent in which a pattern is formed, and a portion where the pattern 340 is printed is cured, and a portion where the pattern 340 is not printed is reacted by UV. In this case, the portion in which the reaction occurs is precisely etched (320).
도 4는 본 발명의 실시예에 따른 플라즈마 식각 공정을 위한 ICP 공정 챔버를 나타낸 도면이다.4 is a view showing an ICP process chamber for a plasma etching process according to an embodiment of the present invention.
도 1에서 도 2에 패턴을 생성하는 방법에서 식각 공정은 플라즈마를 이용하여 건식 식각을 하는 것이 바람직하다. 도 4는 내장형 안테나를 갖는 유도형 결합 플라즈마(Inductively Coupled Plasma, 이하 'ICP'라고 칭함) 공정 챔버(400)이다.In the method of generating a pattern in FIGS. 1 to 2, the etching process may be performed by dry etching using plasma. 4 is an inductively coupled plasma (ICP) process chamber 400 having a built-in antenna.
유도형 결합 플라즈마 공정 챔버(400)는 접지와 연결되며 도전체로 이루어진 진공 챔버(400)의 외벽(405), 외벽(405)과 절연 연결된 지지 수단(410) 및 지지 수단(410)에 장착되는 복제 금형(420)을 포함한다.The inductively coupled plasma process chamber 400 is replicated to the outer wall 405, the support means 410 and the support means 410 insulated from the outer wall 405 of the vacuum chamber 400 made of a conductor connected to ground. A mold 420.
유도형 결합 플라즈마 공정 챔버(400)를 이용하여 복제 금형(420)을 식각하며, 나노 단위까지 식각이 가능하다.The replica die 420 is etched using the inductively coupled plasma process chamber 400, and etching is possible up to nano units.
복제 금형(420)은 전도성 물질로 구성될 수 있으며, 복제 금형(420)의 일측은 임피던스 매칭 네트워크(415)를 통하고, 타측은 종단 커패시터(430)를 통하여 RF 전원(425)에 연결된다. 이를 통해 음성적인 RF 자기 바이어스는 플라즈마(435) 방전 시 복제 금형(420)의 표면에 걸리게 된다. 이때, RF 전원(425)의 주파수는 안테나-기판에 따라 정상파 효과와 전송 라인 효과가 최소가 되도록 선택할 수 있다.The replication mold 420 may be made of a conductive material, and one side of the replication mold 420 is connected to the RF power source 425 through the impedance matching network 415 and the other side thereof through the termination capacitor 430. As a result, the negative RF magnetic bias is applied to the surface of the replication mold 420 when the plasma 435 is discharged. In this case, the frequency of the RF power source 425 may be selected such that the standing wave effect and the transmission line effect are minimized according to the antenna substrate.
또한, 절연 연결된 지지 수단(410)은 정상파 효과로 인한 방전 전압을 피하기 위하여 접지 연결될 수도 있다.In addition, the insulated support means 410 may be grounded to avoid discharge voltages due to standing wave effects.
복제 금형(420) 내부에 소정 온도의 유체(440)를 통과시킴으로써, 복제 금형(420) 온도를 조절할 수 있으며, 복제 금형(420)의 내부는 진공 밀봉을 통하여 공정 챔버와 서로 분리된다(445).By passing the fluid 440 at a predetermined temperature inside the replication mold 420, the temperature of the replication mold 420 may be adjusted, and the interior of the replication mold 420 is separated from each other with the process chamber through vacuum sealing (445). .
복제 금형(420)을 식각하는 과정은 임피던스 매칭 네트워크(415)를 통하여 복제 금형(420)에 RF 전력이 인가되고, RF 전력에 공진이 발생하여 공정 챔버(400) 내에 플라즈마(435)가 형성된다.In the process of etching the replica die 420, RF power is applied to the replica die 420 through the impedance matching network 415, and resonance occurs in the RF power, thereby forming a plasma 435 in the process chamber 400. .
복제 금형(420)에 이온과 전자의 이동 차이에 의하여 음성적 직류전원 자기 바이어스가 형성되고, 형성된 플라즈마(435) 내의 이온의 가속을 이용하여 복제 금형(420)을 식각한다.A negative DC power magnetic bias is formed in the replica die 420 by a difference in movement of ions and electrons, and the replica die 420 is etched using acceleration of ions in the formed plasma 435.
본 발명은 이상에서 살펴본 바와 같이 바람직한 실시예를 들어 도시하고 설명하였으나, 상기한 실시예에 한정되지 아니하며 본 발명의 정신을 벗어나지 않는 범위 내에서 당해 발명이 속하는 기술분야에서 통상의 지식을 가진 자에 의해 다양한 변경과 수정이 가능할 것이다.Although the present invention has been shown and described with reference to the preferred embodiments as described above, it is not limited to the above embodiments and those skilled in the art without departing from the spirit of the present invention. Various changes and modifications will be possible.

Claims (8)

  1. UV 임프린트 기법을 이용하여 원통 금형에 패턴을 복제하는 방법에 있어서,In the method of duplicating a pattern on a cylindrical mold using a UV imprint technique,
    원본 금형의 패턴에 UV 경화제가 도포되고, 스탬프 원통은 상기 원본 금형과 맞닿아 회전하면서 상기 원본 금형의 패턴을 복제하며, 상기 스탬프 원통에 UV 광원을 조사하는 제 1단계;UV curing agent is applied to the pattern of the original mold, the stamp cylinder is rotated in contact with the original mold to duplicate the pattern of the original mold, and irradiating a UV light source to the stamp cylinder;
    상기 원본 금형의 패턴이 복제된 상기 스탬프 원통을 식각하는 제 2단계;A second step of etching the stamp cylinder in which the pattern of the original mold is duplicated;
    상기 스탬프 원통의 패턴에 UV 경화제가 도포되고, 복제 금형은 상기 스탬프 원통과 맞닿아 회전하면서 상기 스탬프 원통의 패턴을 복제하며, 상기 복제 금형에 UV 광원을 조사하여 상기 스탬프 원통의 패턴을 복제 금형에 복제하는 제 3단계; 및A UV curing agent is applied to the pattern of the stamp cylinder, and the replica die replicates the pattern of the stamp cylinder while rotating in contact with the stamp cylinder, and irradiates a UV light source to the replica mold to transfer the pattern of the stamp cylinder to the replica mold. Replicating the third step; And
    상기 스탬프 원통의 패턴이 복제된 상기 복제 금형을 식각하는 제 4단계A fourth step of etching the replica die having the replica of the stamp cylinder pattern;
    를 포함하는 UV 임프린트 기법을 이용하여 원통 금형에 패턴을 복제하는 방법.Method for duplicating a pattern in a cylindrical mold using a UV imprint technique comprising a.
  2. 제 1항에 있어서,The method of claim 1,
    상기 스탬프 원통은 투명 재질인 것을 특징으로 하는 UV 임프린트 기법을 이용하여 원통 금형에 패턴을 복제하는 방법.The stamp cylinder is a method for duplicating a pattern in a cylindrical mold using a UV imprint technique, characterized in that the transparent material.
  3. 제 1항에 있어서,The method of claim 1,
    상기 제 1단계 또는 제 3단계에서 상기 UV 광원은 상기 스탬프 원통의 내부 또는 외부에서 조사하는 것을 특징으로 하는 UV 임프린트 기법을 이용하여 원통 금형에 패턴을 복제하는 방법.And in the first or third step, the UV light source is irradiated from the inside or outside of the stamp cylinder.
  4. 제 1항에 있어서,The method of claim 1,
    상기 제 2단계 또는 제 4단계는 유도형 결합 플라즈마를 이용하여 건식 식각을 하는 것을 특징으로 하는 UV 임프린트 기법을 이용하여 원통 금형에 패턴을 복제하는 방법.The second step or the fourth step is a method for replicating the pattern in the cylindrical mold using the UV imprint technique, characterized in that the dry etching using an inductively coupled plasma.
  5. UV 임프린트 기법을 이용하여 원통 금형에 패턴을 복제하는 방법에 있어서,In the method of duplicating a pattern on a cylindrical mold using a UV imprint technique,
    평판과 원본 금형이 맞닿아 회전하여 상기 원본 금형의 패턴을 상기 평판에 복제하기 위해 상기 평판에 UV 경화제가 도포되고, 상기 평판에 UV 광원을 조사하는 제 1단계;A first step of applying a UV curing agent to the flat plate so that the flat plate and the original mold rotate in contact with each other, thereby replicating the pattern of the original mold onto the flat plate, and irradiating a UV light source to the flat plate;
    상기 원본 금형의 패턴이 복제된 상기 평판을 식각하는 제 2단계;A second step of etching the flat plate on which the pattern of the original mold is duplicated;
    상기 평판의 패턴에 UV 경화제가 도포되고, 복제 금형은 상기 평판과 맞닿아 회전하면서 상기 평판의 패턴을 복제하며, 상기 복제 금형에 UV 광원을 조사하여 상기 평판의 패턴을 복제 금형에 복제하는 제 3단계; 및A UV curing agent is applied to the pattern of the flat plate, and the replication mold replicates the pattern of the flat plate while rotating in contact with the flat plate, and radiates a pattern of the flat plate to the copy mold by irradiating a UV light source to the copy mold. step; And
    상기 평판의 패턴이 복제된 상기 복제 금형을 식각하는 제 4단계A fourth step of etching the replica mold having the pattern of the plate replicated
    를 포함하는 UV 임프린트 기법을 이용하여 원통 금형에 패턴을 복제하는 방법.Method for duplicating a pattern in a cylindrical mold using a UV imprint technique comprising a.
  6. 제 5항에 있어서,The method of claim 5,
    상기 평판은 투명 재질인 것을 특징으로 하는 UV 임프린트 기법을 이용하여 원통 금형에 패턴을 복제하는 방법.The plate is a method of replicating a pattern in a cylindrical mold using a UV imprint technique, characterized in that the transparent material.
  7. 제 5항에 있어서,The method of claim 5,
    상기 제 1단계 또는 제 3단계에서 상기 UV 광원은 상기 평판이 상기 원본 금형 또는 상기 복제 금형과 맞닿은 부분의 대칭되는 부분에 조사하는 것을 특징으로 하는 UV 임프린트 기법을 이용하여 원통 금형에 패턴을 복제하는 방법.In the first step or the third step, the UV light source is to copy the pattern to the cylindrical mold by using a UV imprint technique, characterized in that for irradiating the symmetrical portion of the portion in which the plate is in contact with the original mold or the replica mold. Way.
  8. 제 5항에 있어서,The method of claim 5,
    상기 제 2단계 또는 제 4단계는 유도형 결합 플라즈마를 이용하여 건식 식각을 하는 것을 특징으로 하는 UV 임프린트 기법을 이용하여 원통 금형에 패턴을 복제하는 방법.The second step or the fourth step is a method for replicating the pattern in the cylindrical mold using the UV imprint technique, characterized in that the dry etching using an inductively coupled plasma.
PCT/KR2012/001468 2011-03-22 2012-02-27 Method for duplicating pattern on cylindrical mold using uv imprint technique WO2012128482A2 (en)

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