WO2012128467A2 - Apparatus and method for manufacturing a cylindrical stamp using a cylindrical pattern mask - Google Patents

Apparatus and method for manufacturing a cylindrical stamp using a cylindrical pattern mask Download PDF

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Publication number
WO2012128467A2
WO2012128467A2 PCT/KR2012/000752 KR2012000752W WO2012128467A2 WO 2012128467 A2 WO2012128467 A2 WO 2012128467A2 KR 2012000752 W KR2012000752 W KR 2012000752W WO 2012128467 A2 WO2012128467 A2 WO 2012128467A2
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Prior art keywords
cylindrical
pattern mask
cylindrical mold
mold
exposure
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PCT/KR2012/000752
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French (fr)
Korean (ko)
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WO2012128467A3 (en
Inventor
채주현
유지강
허지원
이규만
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(주)뉴옵틱스
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Publication of WO2012128467A2 publication Critical patent/WO2012128467A2/en
Publication of WO2012128467A3 publication Critical patent/WO2012128467A3/en

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/24Curved surfaces

Definitions

  • the present invention relates to a cylindrical stamp manufacturing apparatus and a cylindrical stamp manufacturing method using a cylindrical pattern mask, by combining one or more semi-cylindrical pattern mask to the Ni-P plated cylindrical mold to perform UV exposure to a variety of micrometer-class
  • the present invention relates to a cylindrical stamp manufacturing apparatus and a cylindrical stamp manufacturing method using a cylindrical pattern mask that can produce a pattern through a continuous automated process.
  • the nano printing process using the cylindrical mold is easy to secure the uniformity of the pattern when applying a large area, there is an advantage in large area using the seamless cylindrical mold.
  • FIG. 1 is a configuration diagram showing an exposure method of a cylindrical mold according to the prior art.
  • the pattern 11 to be transferred to the cylindrical mold 20 is formed in the planar film mask 10, and the photosensitive liquid is formed on the cylindrical mold 20 as shown in (b). 30 performs a coating treatment.
  • the film mask 10 having a flat shape is adhered to the cylindrical mold 20 using a tape (not shown), and then, the light source 40 is used to the cylindrical mold 20 to which the film mask 10 is adhered.
  • the film mask 10 is removed to form a pattern 12 as shown in (e) in the cylindrical mold 20.
  • FIG. 2 is a configuration diagram showing an exposure method of a cylindrical mold according to another prior art.
  • UV light is irradiated to the cylindrical mold 90 through the light irradiation means 50 and the light guide means 60, and the light guide means 60 and the cylindrical mold 90 are provided.
  • a photo mask 70 is provided.
  • the light irradiating means 50 irradiates the cylindrical mold 90 with UV light through the light inducing means 60, and the UV light is patterned to the cylindrical mold 90 rotating through the photo mask 70.
  • Such a prior art has the advantage of manufacturing the pattern 80 in the cylindrical mold 90 in a short time, but as the distance difference between the cylindrical mold 90 and the photo mask 70 occurs, the precise pattern 80 is realized. There is a problem that is difficult to do, and there is a problem that it is difficult to produce a variety of patterns 80 in the cylindrical mold (90) in accordance with the limit of the light guide means (60).
  • the present invention devised to solve the problems of the prior art as described above is combined with a pattern mask formed in at least one of the cylindrical mold, and then subjected to UV exposure to the pattern mask, to easily form a cylindrical stamp formed on the cylindrical mold
  • the purpose is to.
  • the present invention has another object to form a pattern in the cylindrical mold, to enable a continuous and automated process when forming a variety of micrometer-class pattern.
  • the present invention is another object for producing a cylindrical stamp formed with a large area pattern of various sizes by combining two or more pattern masks in the cylindrical mold when the diameter of the cylindrical mold is large.
  • the present invention has another object to facilitate the division of the printed pattern according to the size of each pattern mask by combining the two or more pattern masks in the cylindrical mold, by adjusting the size of the combined pattern mask.
  • the object of the present invention is a cylindrical stamp manufacturing apparatus, comprising a cylindrical mold to be pretreated for UV exposure, a transfer device for moving the cylindrical mold and at least one pattern mask for forming a pattern on the cylindrical mold and the UV It is achieved by the cylindrical stamp manufacturing apparatus using the cylindrical pattern mask which consists of a UV light source for performing exposure.
  • Another object of the present invention is a cylindrical stamp manufacturing method, the first step of pre-processing the cylindrical mold and the second step of applying a photoresist to the cylindrical mold and the third step of coupling the pattern mask to the cylindrical mold and the It is achieved by a cylindrical stamp manufacturing method using a cylindrical pattern mask comprising a fourth step of performing a UV exposure to the cylindrical mold and a fifth step of separating the pattern mask bonded to the cylindrical mold.
  • the UV exposure apparatus and the exposure method of the Ni-P cylinder using the cylindrical pattern mask of the present invention combine the pattern mask formed in two or more in the cylindrical mold, and then perform the UV exposure on the pattern mask, thereby easily patterning the cylindrical mold There is an effect that can form.
  • the present invention by forming a pattern on the cylindrical mold, when forming a variety of patterns of the micrometer class has another effect capable of continuous and automated processes.
  • the present invention has another effect of forming a large area pattern of various sizes by combining two or more pattern masks in the cylindrical mold when the diameter of the cylindrical mold is large.
  • the present invention has the effect of facilitating the division of the printed pattern according to the size of each pattern mask by adjusting the size of the combined pattern mask by combining two or more pattern masks in the cylindrical mold.
  • FIG. 1 is a block diagram showing an exposure method of a cylindrical mold according to the prior art
  • FIG. 2 is a configuration diagram showing an exposure method of a cylindrical mold according to another prior art
  • FIG. 3 is a block diagram for manufacturing a cylindrical stamp using a cylindrical pattern mask according to the first embodiment of the present invention
  • FIG. 5 is a block diagram for manufacturing a cylindrical stamp using a cylindrical pattern mask according to a second embodiment of the present invention
  • FIG. 7 is a flowchart illustrating a method of manufacturing a cylindrical stamp using a cylindrical pattern mask according to the present invention
  • FIG. 8 is a flow chart of pretreatment in a method of manufacturing a cylindrical stamp using a cylindrical pattern mask according to the present invention.
  • FIG. 3 is a block diagram for manufacturing a cylindrical stamp using a cylindrical pattern mask according to the first embodiment of the present invention. As shown in FIG. 3A, the cylindrical mold 110 having a predetermined diameter is moved by the transfer device 120 to be coupled with the pattern mask 130.
  • the conveying apparatus 120 may horizontally or horizontally convey the combined cylindrical mold 110 or vertically convey the vertically.
  • Pattern mask 130 is formed in two or more are coupled in the axial direction of the cylindrical mold (110), it is coupled while wrapping one outer peripheral surface and the other outer peripheral surface of the cylindrical mold (110).
  • At least one alignment point mark (not shown) is displayed on the cylindrical mold 110 and the pattern mask 130 to facilitate coupling between the cylindrical mold 110 and the pattern mask 130. And is displayed on the side surface portion of the pattern mask 130.
  • two or more pattern masks 130 may be provided. Two or more pattern masks 130 may be combined to surround the outer circumferential surface of the cylindrical mold 110 and may be provided according to the shape and size of the pattern to be printed. It can be produced as above.
  • FIG. 4 is a UV exposure configuration for producing a cylindrical stamp according to the first embodiment of the present invention.
  • a cylindrical pattern mask coupled to two or more surfaces of the cylindrical mold (
  • the UV light source 150 installed to uniformly expose the 130 may be a UV light source (upright, left, right, and right positions as shown in (a), up, down, left and right positions as shown in (b) or the entire circumference of the cylindrical mold as shown in (c)).
  • a variety of micrometer-class patterns may be formed on the surface of the cylindrical mold 110 according to a pattern formed on the pattern mask 130 by performing UV exposure.
  • FIG. 5 is a block diagram for manufacturing a cylindrical stamp using a cylindrical pattern mask according to a second embodiment of the present invention. As shown in FIG. 5, (a) couples one pattern mask 130 to one side of the cylindrical mold 110 transferred by the transfer apparatus 120, and the pattern mask 130 is coupled to the cylindrical shape.
  • the shield stage 140 is positioned below the cylindrical mold 110 to couple the shield stage 140 to the other side of the mold 110.
  • (b) shows a state in which the shield stage 140 located below the cylindrical mold 110 is coupled to the other side of the cylindrical mold 110, and (c) shows a pattern mask 130 and a cylindrical mask 110 in the cylindrical mold 110.
  • the UV mask is exposed to the pattern mask 130 on one side (upper surface) of the cylindrical mold 110 to which the shield stage 140 is not coupled. UV exposure is preferably carried out from the UV light source 150 located above the cylindrical mold (110).
  • the pattern mask 130 of one side (upper surface) of the cylindrical mold 110 to which the shield stage 140 is not coupled After the first UV exposure is performed on the pattern mask 130 of one side (upper surface) of the cylindrical mold 110 to which the shield stage 140 is not coupled, the pattern mask 130 of one side (upper surface) is applied. And the shield stage 140 of the other side (lower surface) is separated, the cylindrical mold 110 is rotated 180 ° by the transfer device 120.
  • the pattern mask 130 is positioned to perform the UV exposure, and one of the rotated cylindrical mold 110 The side of the shield stage 140 is coupled because the UV exposure was performed in accordance with the combination of the pattern mask 130.
  • the second UV exposure is performed through the UV light source 150 to the pattern mask 130 coupled to the other side of the cylindrical mold 110.
  • one side of the cylindrical mold 110 subjected to the first UV exposure is rotated by 180 ° by the transfer device 120 to shield the pattern formed on the surface from the second UV exposure.
  • the other side of the cylindrical mold 110 subjected to the first UV exposure is rotated 180 ° by the transfer device 120 and the pattern mask 130 is coupled to form a pattern on the surface according to the second UV exposure. Can be formed.
  • the UV light source 150 is provided for UV exposure to the pattern mask 130 located on one side (upper surface) of the cylindrical mold 110 transferred by the transfer apparatus 120.
  • the shield stage 140 coupled with the pattern mask 130 located on the other side (lower surface) of the cylindrical mold 110 is cylindrical from the UV exposure irradiated from the UV light source 150 so that the other side (lower) of the mold 110 is lowered. Cotton) can be protected.
  • (a) shows a planar UV light source 150 for performing UV exposure on the pattern mask 130 coupled to one side (top) of the cylindrical mold 110
  • (b) is two or more planar The UV light source 150 is shown
  • (c) has shown the semi-cylindrical UV light source.
  • Each embodiment is optionally available depending on the degree of exposure through the UV light source 150.
  • FIGS. 7 is a flow chart showing a method of manufacturing a cylindrical stamp using a cylindrical pattern mask according to the present invention
  • Figure 8 is a pre-processing flow chart in the method of manufacturing a cylindrical stamp using a cylindrical pattern mask according to the present invention.
  • the cylindrical mold to be subjected to UV exposure is subjected to a pretreatment step (S210), and the nozzle position of the spray coater is set to apply the photoresist to the surface of the cylindrical mold which has been pretreated. (S220).
  • a photoresist coating process value is set (S230), and the photoresist is coated on the surface of the cylindrical mold by the set process value and dried (S240).
  • the cylindrical mold coated with the photoresist is moved by a transfer device to a place where the UV light source is located to perform UV exposure, and then combines one or more pattern masks provided to surround the outer circumferential surface of the cylindrical mold (S250).
  • the shield stage is coupled to the other side of the cylindrical mold in order to protect the other side of the cylindrical mold from UV exposure.
  • the shield stage is tightly coupled to the bottom pattern mask to protect the pattern mask located on the other side of the cylindrical mold from UV exposure.
  • the shield stage is the same as the size of the pattern mask is preferably matched to match the pattern mask joint portion bonded to the cylindrical mold.
  • the first UV exposure is performed using a UV light source to the pattern mask located on one side of the cylindrical mold (S260). After completing the first UV exposure, the pattern mask coupled to one side of the cylindrical mold and the shield mask coupled to the other side are removed (S270).
  • the cylindrical mold is rotated by 180 ° by the transfer device, the pattern mask is coupled to the other side of the cylindrical mold for the second UV exposure, and the shield stage is coupled to the one side, so as to expose the second UV from the UV light source. (S260).
  • one side of the cylindrical mold combines the shield stage to protect the formed pattern, and the other side of the cylindrical mold uses a pattern mask to perform UV exposure. To combine. Accordingly, the second UV exposure is performed and the shield stage coupled to the lower pattern mask is removed (S270).
  • the number of times of performing the UV exposure is determined according to the size of the pattern mask bonded to the outer peripheral surface of the cylindrical mold. For example, when the size of the pattern mask coupled to the outer circumferential surface of the cylindrical mold is 1/3 the size of the outer circumferential surface of the cylindrical mold, the 1/3 size pattern mask is combined to one side of the cylindrical mold, and the 2/3 size cylindrical The other side of the mold is coupled to the shield stage to perform the first UV exposure.
  • the pattern mask is bonded to any one of the other sides of the cylindrical mold not subjected to UV exposure, and one side of the cylindrical mold subjected to UV exposure and the cylindrical surface not subjected to UV exposure.
  • the secondary UV exposure is performed by coupling the shield stage to the other part of the other side of the mold.
  • the pattern mask is bonded to the other part of the other side of the cylindrical mold not subjected to the UV exposure, and one side of the cylindrical mold subjected to the first and second UV exposures and The third stage of UV exposure is performed by coupling the shield stage to any one of the other sides.
  • the UV exposure in step S260 is preferably performed on the combined pattern mask along the outer circumferential surface of the cylindrical mold, and after the UV exposure is performed, the combined pattern mask is removed (S270).
  • step S290 After all the UV exposure is performed on the outer circumferential surface of the cylindrical mold, development of the cylindrical mold subjected to the UV exposure is performed (S280), and an etching process may be further performed as necessary (S290).
  • the etching process of step S290 is preferably carried out by at least one of wet etching or dry etching.
  • the pretreatment step S210 of the cylindrical mold may be performed by a process as shown in FIG. 8.
  • Electroless nickel plating is performed so that a nickel (Ni) layer having a phosphorus (P) content of 8 to 20 wt% is formed, and the heat treatment is preferably a cylindrical mold surface hardness of 600 to 950 Hv.
  • the surface treatment is performed on the surface of the cylindrical mold (S213).
  • the surface treatment is a mirror surface treatment such that the surface roughness Ra of the cylindrical mold is 1 to 5 nm, and the mirror surface treatment is divided into a lapping process and a polishing process, and each process is performed in a machine tool.
  • the lapping process is performed 3 to 8 times by selecting 5 to 7 different alumina (AL203) lapping films having different particle sizes from alumina (AL203) lapping films having a size of 30 ⁇ m to 1 ⁇ m. Carry out step by step.
  • the polishing process is carried out in steps of 25 to 35 minutes in the order of the smallest particle size, by selecting diamond suspensions of three to five different particle sizes among diamond suspensions having a particle size of 3 ⁇ m to 0.05 ⁇ m.
  • the surface of the cylindrical mold is cleaned (S214), and if necessary, a nitrogen blowing step (S215) may be additionally performed.

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  • Nanotechnology (AREA)
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  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

The present invention relates to an apparatus and method for manufacturing a cylindrical stamp using a cylindrical pattern mask , and more particularly, to an apparatus and method for manufacturing a cylindrical stamp using a cylindrical pattern mask, wherein at least one semi-cylindrical pattern mask is coupled to a cylindrical mold plated with Ni-P for UV exposure, to thereby manufacture various patterns having a size of several micrometers through a continuous automated process. The apparatus for manufacturing a cylindrical stamp using the cylindrical pattern mask includes: a cylindrical mold on which preprocessing for UV exposure is performed; a transfer device for transferring the cylindrical mold; at least one pattern mask for forming patterns on the cylindrical mold; and a UV light source for performing UV exposure.

Description

원통형 패턴 마스크를 이용한 원통형 스탬프 제작 장치 및 제작 방법Cylindrical Stamp Production Apparatus and Manufacturing Method Using Cylindrical Pattern Mask
본 발명은 원통형 패턴 마스크를 이용한 원통형 스탬프 제작 장치 및 원통형 스탬프 제작 방법에 관한 것으로, Ni-P를 도금한 원통형 금형에 하나 이상의 반원통형 패턴 마스크를 결합하여 UV 노광을 수행함에 수 마이크로미터 급의 다양한 패턴을 연속적인 자동화 공정을 통해 제작할 수 있는 원통형 패턴 마스크를 이용한 원통형 스탬프 제작 장치 및 원통형 스탬프 제작 방법에 관한 것이다.The present invention relates to a cylindrical stamp manufacturing apparatus and a cylindrical stamp manufacturing method using a cylindrical pattern mask, by combining one or more semi-cylindrical pattern mask to the Ni-P plated cylindrical mold to perform UV exposure to a variety of micrometer-class The present invention relates to a cylindrical stamp manufacturing apparatus and a cylindrical stamp manufacturing method using a cylindrical pattern mask that can produce a pattern through a continuous automated process.
반도체 및 디스플레이에서 일반적인 노광 공정으로는 증착, 노광(마스크), 현상, 식각 등의 기본 공정을 수차례 내지 수십 차례에 걸쳐 반복해야할 뿐만 아니라, 나노미터 단위의 초정밀 인쇄를 실현할 수 없었으며, 나노 패턴을 인쇄하기 위해서는 평판형 임프린트(imprint) 공정을 통해 나노패턴이 새겨진 평판 금형을 이용해 소형 기판 위에 마치 도장을 찍듯이 눌러서 인쇄를 하였다.As a general exposure process in semiconductors and displays, not only the basic processes such as deposition, exposure (mask), development, and etching have to be repeated several times or dozens of times, but also ultra-precision printing in nanometers cannot be realized. In order to print, the plate was imprinted on a small substrate using a flat die engraved with a nano pattern through a flat plate imprint process.
이러한 평판 인쇄 공정을 대면적에 적용할 경우 패턴의 균일도 및 제작비용이 상승하는 문제점이 발생하여 현재는 원통형 금형을 이용한 나노 인쇄공정이 적용되고 있다. 따라서, 원통형 금형을 이용한 나노 인쇄공정은 대면적 적용시 패턴의 균일도 확보가 용이하며, 이음매 없는 원통형 금형을 이용한 대면적화에 유리한 장점이 있다.When the flat printing process is applied to a large area, a problem arises in that the uniformity of the pattern and the manufacturing cost increase, and a nano printing process using a cylindrical mold is currently applied. Therefore, the nano printing process using the cylindrical mold is easy to secure the uniformity of the pattern when applying a large area, there is an advantage in large area using the seamless cylindrical mold.
도 1은 종래기술에 따른 원통형 금형의 노광 방법을 나타내는 구성도이다. 도 1의 (a)에 도시된 바와 같이, 평면 형태의 필름 마스크(10)에는 원통형 금형(20)에 전사할 패턴(11)이 형성되어 있으며, (b)와 같이 원통형 금형(20)에 감광액(30)을 코팅 처리를 수행한다. 이후, 평면 형태의 필름 마스크(10)를 원통형 금형(20)에 테이프(미도시) 등을 이용하여 접착한 후, 필름 마스크(10)가 접착된 원통형 금형(20)에 광원(40)을 이용하여 노광을 수행한 후, 필름 마스크(10)를 제거하면 (e)와 같은 패턴(12)이 원통형 금형(20)에 형성된다.1 is a configuration diagram showing an exposure method of a cylindrical mold according to the prior art. As shown in (a) of FIG. 1, the pattern 11 to be transferred to the cylindrical mold 20 is formed in the planar film mask 10, and the photosensitive liquid is formed on the cylindrical mold 20 as shown in (b). 30 performs a coating treatment. Thereafter, the film mask 10 having a flat shape is adhered to the cylindrical mold 20 using a tape (not shown), and then, the light source 40 is used to the cylindrical mold 20 to which the film mask 10 is adhered. After the exposure is performed, the film mask 10 is removed to form a pattern 12 as shown in (e) in the cylindrical mold 20.
이러한 종래기술은 평면 형태의 필름 마스크(10)를 원통형 금형(20)에 접착하는 경우, 정확한 위치에 접착하기 어려우며, 필름 마스크(10)를 원통형 금형(20)에 고정함에 있어서도 테이프(미도시) 등을 이용하여 접착하므로 제작 공정이 복잡하고 제작 시간도 오래 걸리는 문제점이 있다.Such a prior art is difficult to adhere to the correct position when the flat film mask 10 is adhered to the cylindrical mold 20, and a tape (not shown) is also used to fix the film mask 10 to the cylindrical mold 20. Since the adhesive using such as the manufacturing process is complicated and takes a long time to produce.
도 2는 다른 종래기술에 따른 원통형 금형의 노광 방법을 나타내는 구성도이다. 도 2에 도시된 바와 같이, 광조사 수단(50)과 광유도 수단(60)을 통해 UV 광을 원통형 금형(90)에 조사할 수 있도록 구비하며, 광유도 수단(60)과 원통형 금형(90) 사이에는 포토 마스크(70)를 구비한다. 이때, 광조사 수단(50)은 광유도 수단(60)을 통해 UV 광을 원통형 금형(90)에 조사하며, UV 광은 포토 마스크(70)를 통해 회전하는 원통형 금형(90)에 패턴(80)을 형성시킬 수 있다.2 is a configuration diagram showing an exposure method of a cylindrical mold according to another prior art. As shown in FIG. 2, UV light is irradiated to the cylindrical mold 90 through the light irradiation means 50 and the light guide means 60, and the light guide means 60 and the cylindrical mold 90 are provided. ), A photo mask 70 is provided. At this time, the light irradiating means 50 irradiates the cylindrical mold 90 with UV light through the light inducing means 60, and the UV light is patterned to the cylindrical mold 90 rotating through the photo mask 70. ) Can be formed.
이러한 종래기술은 빠른 시간 내에 원통형 금형(90)에 패턴(80)을 제작할 수 있는 장점이 있으나, 원통형 금형(90)과 포토 마스크(70)와의 거리 차이가 발생함에 따라 정밀한 패턴(80)을 구현하기 어려운 문제가 있으며, 광유도 수단(60)의 한계에 따라 다양한 패턴(80)을 원통형 금형(90)에 제작하기 어려운 문제가 있다.Such a prior art has the advantage of manufacturing the pattern 80 in the cylindrical mold 90 in a short time, but as the distance difference between the cylindrical mold 90 and the photo mask 70 occurs, the precise pattern 80 is realized. There is a problem that is difficult to do, and there is a problem that it is difficult to produce a variety of patterns 80 in the cylindrical mold (90) in accordance with the limit of the light guide means (60).
상기와 같은 종래 기술의 문제점을 해결하기 위하여 안출된 본 발명은 원통형 금형에 하나 이상으로 형성된 패턴 마스크를 결합한 후, 패턴 마스크에 UV 노광을 실시함으로써, 원통형 금형에 용이하게 패턴이 형성된 원통형 스탬프를 제작하기 위한 목적이 있다.The present invention devised to solve the problems of the prior art as described above is combined with a pattern mask formed in at least one of the cylindrical mold, and then subjected to UV exposure to the pattern mask, to easily form a cylindrical stamp formed on the cylindrical mold The purpose is to.
또한, 본 발명은 원통형 금형에 패턴을 형성함으로써, 마이크로미터급의 다양한 패턴을 형성하는 경우 연속적이고 자동화 공정이 가능하도록 하는 다른 목적이 있다.In addition, the present invention has another object to form a pattern in the cylindrical mold, to enable a continuous and automated process when forming a variety of micrometer-class pattern.
또한, 본 발명은 원통형 금형의 지름이 큰 경우에 원통형 금형에 둘 이상의 패턴 마스크를 결합함으로써 다양한 크기의 대면적 패턴이 형성된 원통형 스탬프를 제작하기 위한 또 다른 목적이 있다.In addition, the present invention is another object for producing a cylindrical stamp formed with a large area pattern of various sizes by combining two or more pattern masks in the cylindrical mold when the diameter of the cylindrical mold is large.
또한, 본 발명은 원통형 금형에 둘 이상의 패턴 마스크를 결합함으로써, 결합되는 패턴 마스크의 크기를 조정함으로써, 각각의 패턴 마스크의 크기에 따라 인쇄된 패턴의 분할을 용이하게 하기 위한 또 다른 목적이 있다.In addition, the present invention has another object to facilitate the division of the printed pattern according to the size of each pattern mask by combining the two or more pattern masks in the cylindrical mold, by adjusting the size of the combined pattern mask.
본 발명의 상기 목적은 원통형 스탬프 제작 장치에 있어서, UV 노광을 위해 전처리가 수행되는 원통형 금형과 상기 원통형 금형을 이동하기 위한 이송 장치와 상기 원통형 금형에 패턴을 형성하기 위한 하나 이상의 패턴 마스크 및 상기 UV 노광을 실시하기 위한 UV 광원을 포함하여 이루어지는 원통형 패턴 마스크를 이용한 원통형 스탬프 제작 장치에 의해 달성된다.The object of the present invention is a cylindrical stamp manufacturing apparatus, comprising a cylindrical mold to be pretreated for UV exposure, a transfer device for moving the cylindrical mold and at least one pattern mask for forming a pattern on the cylindrical mold and the UV It is achieved by the cylindrical stamp manufacturing apparatus using the cylindrical pattern mask which consists of a UV light source for performing exposure.
본 발명의 다른 목적은 원통형 스탬프 제작 방법에 있어서, 상기 원통형 금형을 전처리하는 제1단계와 상기 원통형 금형에 포토레지스트를 도포하는 제2단계와 상기 원통형 금형에 패턴 마스크를 결합하는 제3단계와 상기 원통형 금형에 UV 노광을 수행하는 제4단계 및 상기 원통형 금형에 결합된 상기 패턴 마스크를 분리하는 제5단계를 포함하여 이루어지는 원통형 패턴 마스크를 이용한 원통형 스탬프 제작 방법에 의해 달성된다.Another object of the present invention is a cylindrical stamp manufacturing method, the first step of pre-processing the cylindrical mold and the second step of applying a photoresist to the cylindrical mold and the third step of coupling the pattern mask to the cylindrical mold and the It is achieved by a cylindrical stamp manufacturing method using a cylindrical pattern mask comprising a fourth step of performing a UV exposure to the cylindrical mold and a fifth step of separating the pattern mask bonded to the cylindrical mold.
따라서, 본 발명의 원통형 패턴 마스크를 이용한 Ni-P 실린더의 UV 노광 장치 및 노광 방법은 원통형 금형에 둘 이상으로 형성된 패턴 마스크를 결합한 후, 패턴 마스크에 UV 노광을 실시함으로써, 원통형 금형에 용이하게 패턴을 형성할 수 있는 효과가 있다.Therefore, the UV exposure apparatus and the exposure method of the Ni-P cylinder using the cylindrical pattern mask of the present invention combine the pattern mask formed in two or more in the cylindrical mold, and then perform the UV exposure on the pattern mask, thereby easily patterning the cylindrical mold There is an effect that can form.
또한, 본 발명은 원통형 금형에 패턴을 형성함으로써, 마이크로미터급의 다양한 패턴을 형성하는 경우 연속적이고 자동화 공정이 가능한 다른 효과가 있다.In addition, the present invention by forming a pattern on the cylindrical mold, when forming a variety of patterns of the micrometer class has another effect capable of continuous and automated processes.
또한, 본 발명은 원통형 금형의 지름이 큰 경우에 원통형 금형에 둘 이상의 패턴 마스크를 결합함으로써 다양한 크기의 대면적 패턴을 형성할 수 있는 또 다른 효과가 있다.In addition, the present invention has another effect of forming a large area pattern of various sizes by combining two or more pattern masks in the cylindrical mold when the diameter of the cylindrical mold is large.
또한, 본 발명은 원통형 금형에 둘 이상의 패턴 마스크를 결합함으로써, 결합되는 패턴 마스크의 크기를 조정함으로써, 각각의 패턴 마스크의 크기에 따라 인쇄된 패턴의 분할을 용이하게 할 수 있는 효과가 있다.In addition, the present invention has the effect of facilitating the division of the printed pattern according to the size of each pattern mask by adjusting the size of the combined pattern mask by combining two or more pattern masks in the cylindrical mold.
도 1은 종래기술에 따른 원통형 금형의 노광 방법을 나타내는 구성도, 1 is a block diagram showing an exposure method of a cylindrical mold according to the prior art,
도 2는 다른 종래기술에 따른 원통형 금형의 노광 방법을 나타내는 구성도, 2 is a configuration diagram showing an exposure method of a cylindrical mold according to another prior art;
도 3은 본 발명의 제1실시예에 따른 원통형 패턴 마스크를 이용한 원통형 스탬프를 제작하기 위한 구성도, 3 is a block diagram for manufacturing a cylindrical stamp using a cylindrical pattern mask according to the first embodiment of the present invention,
도 4는 본 발명의 제1실시예에 따른 원통형 스탬프를 제작하기 위한 UV 노광 구성도, 4 is a UV exposure configuration for producing a cylindrical stamp according to the first embodiment of the present invention,
도 5는 본 발명의 제2실시예에 따른 원통형 패턴 마스크를 이용한 원통형 스탬프를 제작하기 위한 구성도, 5 is a block diagram for manufacturing a cylindrical stamp using a cylindrical pattern mask according to a second embodiment of the present invention,
도 6은 본 발명의 제2실시예에 따른 원통형 스탬프를 제작하기 위한 UV 노광 구성도, 6 is a UV exposure configuration for producing a cylindrical stamp according to a second embodiment of the present invention,
도 7은 본 발명에 따른 원통형 패턴 마스크를 이용한 원통형 스탬프의 제작 방법을 나타내는 순서도, 7 is a flowchart illustrating a method of manufacturing a cylindrical stamp using a cylindrical pattern mask according to the present invention;
도 8은 본 발명에 따른 원통형 패턴 마스크를 이용한 원통형 스탬프의 제작 방법에서의 전처리 순서도이다.8 is a flow chart of pretreatment in a method of manufacturing a cylindrical stamp using a cylindrical pattern mask according to the present invention.
본 명세서 및 청구범위에 사용된 용어나 단어는 통상적이거나 사전적인 의미로 한정해서 해석되어서는 아니되며, 발명자는 그 자신의 발명을 가장 최선의 방법으로 설명하기 위해 용어의 개념을 적절하게 정의할 수 있다는 원칙에 입각하여 본 발명의 기술적 사상에 부합하는 의미와 개념으로 해석되어야만 한다.The terms or words used in this specification and claims are not to be construed as being limited to their ordinary or dictionary meanings, and the inventors may appropriately define the concept of terms in order to best describe their invention. It should be interpreted as meaning and concept corresponding to the technical idea of the present invention based on the principle that the present invention.
따라서, 본 명세서에 기재된 실시예와 도면에 도시된 구성은 본 발명의 가장 바람직한 일 실시예에 불과할 뿐이고 본 발명의 기술적 사상을 모두 대변하는 것은 아니므로, 본 출원시점에 있어서 이들을 대체할 수 있는 다양한 균등물과 변형예들이 있을 수 있음을 이해하여야 한다.Therefore, the embodiments described in the specification and the drawings shown in the drawings are only the most preferred embodiment of the present invention and do not represent all of the technical idea of the present invention, various modifications that can be replaced at the time of the present application It should be understood that there may be equivalents and variations.
이하 첨부된 도면을 참조하여 본 발명의 바람직한 실시예를 상세히 설명하기로 한다. Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.
도 3은 본 발명의 제1실시예에 따른 원통형 패턴 마스크를 이용한 원통형 스탬프를 제작하기 위한 구성도이다. 도 3의 (a)에 도시된 바와 같이, 소정 크기의 지름의 원통형 금형(110)은 패턴 마스크(130)와 결합되기 위해 이송장치(120)에 의해 이동된다.3 is a block diagram for manufacturing a cylindrical stamp using a cylindrical pattern mask according to the first embodiment of the present invention. As shown in FIG. 3A, the cylindrical mold 110 having a predetermined diameter is moved by the transfer device 120 to be coupled with the pattern mask 130.
이송장치(120)는 결합된 원통형 금형(110)을 좌우 수평 이송하거나, 상하 수직 이송할 수 있다.The conveying apparatus 120 may horizontally or horizontally convey the combined cylindrical mold 110 or vertically convey the vertically.
패턴 마스크(130)는 둘 이상으로 형성되어 원통형 금형(110)의 축 방향으로 결합되며, 원통형 금형(110)의 일측 외주면 및 타측 외주면을 감싸면서 결합된다. Pattern mask 130 is formed in two or more are coupled in the axial direction of the cylindrical mold (110), it is coupled while wrapping one outer peripheral surface and the other outer peripheral surface of the cylindrical mold (110).
한편, 원통형 금형(110)과 패턴 마스크(130)에는 상호 간에 결합을 용이하게 하기 위한 얼라인(align) 포인트 마크(미도시)가 하나 이상 표시되어 있으며, 얼라인 포인트 마크는 원통형 금형(110)과 패턴 마스크(130)의 측면부에 표시되는 것이 바람직하다.Meanwhile, at least one alignment point mark (not shown) is displayed on the cylindrical mold 110 and the pattern mask 130 to facilitate coupling between the cylindrical mold 110 and the pattern mask 130. And is displayed on the side surface portion of the pattern mask 130.
또한, 패턴 마스크(130)는 둘 이상으로 구비될 수 있는데, 둘 이상으로 구비되는 패턴 마스크(130)는 원통형 금형(110)의 외주면을 감싸면서 결합되며, 인쇄될 패턴의 형태 및 크기에 따라 둘 이상으로 제작될 수 있다.In addition, two or more pattern masks 130 may be provided. Two or more pattern masks 130 may be combined to surround the outer circumferential surface of the cylindrical mold 110 and may be provided according to the shape and size of the pattern to be printed. It can be produced as above.
(b)는 이송장치(120)에 의해 이송된 원통형 금형(110)에 두 개의 패턴 마스크(130)가 결합된 모습을 나타내고 있다.(b) shows that the two pattern masks 130 are coupled to the cylindrical mold 110 transferred by the transfer device 120.
도 4는 본 발명의 제1실시예에 따른 원통형 스탬프를 제작하기 위한 UV 노광 구성도이다. 도 4에 도시된 바와 같이, 이송장치(120)에 의해 이송된 원통형 금형(110)에 패턴을 형성하는 공정에서 UV 노광을 실시하는 경우, 원통형 금형의 표면에 둘 이상으로 결합된 원통형 패턴 마스크(130)를 균일하게 노광하기 위해 설치되는 UV 광원(150)은 (a)와 같이 상하좌우 위치, (b)와 같이 상하좌우 및 대각 위치 또는 (c)와 같이 원통형 금형의 둘레 전체에 UV 광원(150)을 설치한 후, UV 노광을 실시하여 패턴 마스크(130)에 형성된 패턴에 따라 원통형 금형(110)의 표면에 마이크로미터급의 다양한 패턴을 형성할 수 있다.Figure 4 is a UV exposure configuration for producing a cylindrical stamp according to the first embodiment of the present invention. As shown in FIG. 4, when UV exposure is performed in the process of forming a pattern in the cylindrical mold 110 transferred by the conveying apparatus 120, a cylindrical pattern mask coupled to two or more surfaces of the cylindrical mold ( The UV light source 150 installed to uniformly expose the 130 may be a UV light source (upright, left, right, and right positions as shown in (a), up, down, left and right positions as shown in (b) or the entire circumference of the cylindrical mold as shown in (c)). After the 150 is installed, a variety of micrometer-class patterns may be formed on the surface of the cylindrical mold 110 according to a pattern formed on the pattern mask 130 by performing UV exposure.
도 5는 본 발명의 제2실시예에 따른 원통형 패턴 마스크를 이용한 원통형 스탬프를 제작하기 위한 구성도이다. 도 5에 도시된 바와 같이, (a)는 이송장치(120)에 의해 이송된 원통형 금형(110)의 일측면에 하나의 패턴 마스크(130)를 결합하고, 패턴 마스크(130)가 결합된 원통형 금형(110)의 타측면에 쉴드 스테이지(140)를 결합하기 위해 쉴드 스테이지(140)가 원통형 금형(110)의 하부에 위치한 상태이다.5 is a block diagram for manufacturing a cylindrical stamp using a cylindrical pattern mask according to a second embodiment of the present invention. As shown in FIG. 5, (a) couples one pattern mask 130 to one side of the cylindrical mold 110 transferred by the transfer apparatus 120, and the pattern mask 130 is coupled to the cylindrical shape. The shield stage 140 is positioned below the cylindrical mold 110 to couple the shield stage 140 to the other side of the mold 110.
(b)는 원통형 금형(110)의 하부에 위치한 쉴드 스테이지(140)를 원통형 금형(110)의 타측면에 결합한 상태를 나타내고 있으며, (c)는 원통형 금형(110)에 패턴 마스크(130)와 쉴드 스테이지(140)를 결합한 후, 쉴드 스테이지(140)가 결합되지 않은 원통형 금형(110)의 일측면(상부면)의 패턴 마스크(130)에 UV 노광을 실시하는 상태를 나타내고 있다. UV 노광은 원통형 금형(110)의 상부에 위치하는 UV 광원(150)으로부터 실시되는 것이 바람직하다.(b) shows a state in which the shield stage 140 located below the cylindrical mold 110 is coupled to the other side of the cylindrical mold 110, and (c) shows a pattern mask 130 and a cylindrical mask 110 in the cylindrical mold 110. After coupling the shield stage 140, the UV mask is exposed to the pattern mask 130 on one side (upper surface) of the cylindrical mold 110 to which the shield stage 140 is not coupled. UV exposure is preferably carried out from the UV light source 150 located above the cylindrical mold (110).
쉴드 스테이지(140)가 결합되지 않은 원통형 금형(110)의 일측면(상부면)의 패턴 마스크(130)에 제1차 UV 노광이 실시된 이후, 일측면(상부면)의 패턴 마스크(130)와 타측면(하부면)의 쉴드 스테이지(140)는 분리되고, 원통형 금형(110)은 이송장치(120)에 의해 180° 회전하게 된다. After the first UV exposure is performed on the pattern mask 130 of one side (upper surface) of the cylindrical mold 110 to which the shield stage 140 is not coupled, the pattern mask 130 of one side (upper surface) is applied. And the shield stage 140 of the other side (lower surface) is separated, the cylindrical mold 110 is rotated 180 ° by the transfer device 120.
회전된 원통형 금형(110)의 타측면은 쉴드 스테이지(140)에 의해 UV 노광이 실시되지 않았기 때문에 UV 노광을 실시하기 위해 패턴 마스크(130)가 위치하게 되며, 회전된 원통형 금형(110)의 일측면은 패턴 마스크(130) 결합에 따라 UV 노광이 실시되었기 때문에 쉴드 스테이지(140)가 결합된다.Since the other side of the rotated cylindrical mold 110 is not exposed to the UV by the shield stage 140, the pattern mask 130 is positioned to perform the UV exposure, and one of the rotated cylindrical mold 110 The side of the shield stage 140 is coupled because the UV exposure was performed in accordance with the combination of the pattern mask 130.
이후, 원통형 금형(110)의 타측면에 결합된 패턴 마스크(130)에 UV 광원(150)을 통해 제2차 UV 노광이 실시된다.Thereafter, the second UV exposure is performed through the UV light source 150 to the pattern mask 130 coupled to the other side of the cylindrical mold 110.
즉, 제1차 UV 노광이 실시된 원통형 금형(110)의 일측면은 이송장치(120)에 의해 180° 회전하여 표면에 형성된 패턴을 제2차 UV 노광으로부터 보호하기 위해 쉴드 스테이지(130)가 결합되며, 제1차 UV 노광이 실시된 원통형 금형(110)의 타측면은 이송장치(120)에 의해 180° 회전되고 패턴 마스크(130)가 결합되어 제2차 UV 노광에 따라 표면에 패턴을 형성할 수 있다.That is, one side of the cylindrical mold 110 subjected to the first UV exposure is rotated by 180 ° by the transfer device 120 to shield the pattern formed on the surface from the second UV exposure. The other side of the cylindrical mold 110 subjected to the first UV exposure is rotated 180 ° by the transfer device 120 and the pattern mask 130 is coupled to form a pattern on the surface according to the second UV exposure. Can be formed.
도 6은 본 발명의 제2실시예에 따른 원통형 스탬프를 제작하기 위한 UV 노광 구성도이다. 도 6에 도시된 바와 같이, UV 광원(150)은 이송장치(120)에 의해 이송된 원통형 금형(110)의 일측면(상부면)에 위치한 패턴 마스크(130)에 UV 노광하기 위해 구비되며, 원통형 금형(110)의 타측면(하부면)에 위치한 패턴 마스크(130)와 결합된 쉴드 스테이지(140)는 UV 광원(150)으로부터 조사되는 UV 노광으로부터 원통혀어 금형(110)의 타측면(하부면)을 보호할 수 있다.6 is a UV exposure configuration for manufacturing a cylindrical stamp according to a second embodiment of the present invention. As shown in FIG. 6, the UV light source 150 is provided for UV exposure to the pattern mask 130 located on one side (upper surface) of the cylindrical mold 110 transferred by the transfer apparatus 120. The shield stage 140 coupled with the pattern mask 130 located on the other side (lower surface) of the cylindrical mold 110 is cylindrical from the UV exposure irradiated from the UV light source 150 so that the other side (lower) of the mold 110 is lowered. Cotton) can be protected.
즉, (a)는 원통형 금형(110)의 일측면(상부면)에 결합된 패턴 마스크(130)에 UV 노광을 실시하기 위한 평면형 UV 광원(150)을 나타내고 있으며, (b)는 둘 이상의 평면형 UV 광원(150)을 나타내고 있으며, (c)는 반원통형 UV 광원을 나타내고 있다.That is, (a) shows a planar UV light source 150 for performing UV exposure on the pattern mask 130 coupled to one side (top) of the cylindrical mold 110, (b) is two or more planar The UV light source 150 is shown, and (c) has shown the semi-cylindrical UV light source.
각각의 실시예는 UV 광원(150)을 통한 노광 정도에 따라 선택적으로 사용가능하다.Each embodiment is optionally available depending on the degree of exposure through the UV light source 150.
도 7은 본 발명에 따른 원통형 패턴 마스크를 이용한 원통형 스탬프의 제작 방법을 나타내는 순서도이며, 도 8은 본 발명에 따른 원통형 패턴 마스크를 이용한 원통형 스탬프의 제작 방법에서의 전처리 순서도이다. 도 7 및 도 8에 도시된 바와 같이, UV 노광이 수행될 원통형 금형은 전처리 단계가 수행(S210)되며, 전처리가 완료된 원통형 금형의 표면에 포토레지스트를 도포하기 위해 스프레이 코터의 노즐 위치를 설정한다(S220). 7 is a flow chart showing a method of manufacturing a cylindrical stamp using a cylindrical pattern mask according to the present invention, Figure 8 is a pre-processing flow chart in the method of manufacturing a cylindrical stamp using a cylindrical pattern mask according to the present invention. As shown in FIGS. 7 and 8, the cylindrical mold to be subjected to UV exposure is subjected to a pretreatment step (S210), and the nozzle position of the spray coater is set to apply the photoresist to the surface of the cylindrical mold which has been pretreated. (S220).
이후, 포토레지스트 도포 공정값을 설정하고(S230), 설정된 공정값에 의해 원통형 금형의 표면에 포토레지스트를 도포하고 이를 건조한다(S240).Thereafter, a photoresist coating process value is set (S230), and the photoresist is coated on the surface of the cylindrical mold by the set process value and dried (S240).
포토레지스트가 도포된 원통형 금형은 UV 노광을 실시하기 위해 UV 광원이 위치한 곳으로 이송장치에 의해 이동한 후, 원통형 금형의 외주면을 감싸도록 구비되는 하나 이상의 패턴 마스크를 결합한다(S250).The cylindrical mold coated with the photoresist is moved by a transfer device to a place where the UV light source is located to perform UV exposure, and then combines one or more pattern masks provided to surround the outer circumferential surface of the cylindrical mold (S250).
이때, 원통형 금형의 일측면에 하나의 패턴 마스크가 결합된 경우, UV 노광으로부터 원통형 금형의 타측면을 보호하기 위하여 원통형 금형의 타측면에는 쉴드 스테이지를 결합한다.At this time, when one pattern mask is coupled to one side of the cylindrical mold, the shield stage is coupled to the other side of the cylindrical mold in order to protect the other side of the cylindrical mold from UV exposure.
쉴드 스테이지는 원통형 금형의 타측면에 위치한 패턴 마스크를 UV 노광으로부터 보호하기 위해 하부면 패턴 마스크에 밀착되어 결합된다.The shield stage is tightly coupled to the bottom pattern mask to protect the pattern mask located on the other side of the cylindrical mold from UV exposure.
한편, 쉴드 스테이지는 패턴 마스크의 크기와 동일하여 원통형 금형에 결합된 패턴 마스크 이음매 부분과 매칭되어 결합되는 것이 바람직하다.On the other hand, the shield stage is the same as the size of the pattern mask is preferably matched to match the pattern mask joint portion bonded to the cylindrical mold.
원통형 금형의 일측면에 패턴 마스크 및 타측면에 쉴드 스테이지의 결합이 완료된 경우, 원통형 금형의 일측면에 위치한 패턴 마스크에 UV 광원을 이용하여 제1차 UV 노광을 실시한다(S260). 제1차 UV 노광을 완료한 이후, 원통형 금형의 일측면에 결합되었던 패턴 마스크와 타측면에 결합되었던 쉴드 마스크를 제거한다(S270). When coupling of the shield mask to the pattern mask and the other side of one side of the cylindrical mold is completed, the first UV exposure is performed using a UV light source to the pattern mask located on one side of the cylindrical mold (S260). After completing the first UV exposure, the pattern mask coupled to one side of the cylindrical mold and the shield mask coupled to the other side are removed (S270).
이후, 원통형 금형은 이송장치에 의해 180° 회전되고, 제2차 UV 노광을 위해 원통형 금형의 타측면에는 패턴 마스크가 결합되며, 일측면에는 쉴드 스테이지가 결합되어, UV 광원으로부터 제2차 UV 노광을 실시한다(S260).Thereafter, the cylindrical mold is rotated by 180 ° by the transfer device, the pattern mask is coupled to the other side of the cylindrical mold for the second UV exposure, and the shield stage is coupled to the one side, so as to expose the second UV from the UV light source. (S260).
즉, 원통형 금형의 일측면과 타측면의 위치교환이 완료된 이후, 원통형 금형의 일측면은 형성된 패턴을 보호하기 위해 쉴드 스테이지를 결합하며, 원통형 금형의 타측면은 UV 노광을 실시하기 위해 패턴 마스크를 결합한다. 이에 따라 제2차 UV 노광을 실시하고 하부측 패턴 마스크에 결합된 쉴드 스테이지를 제거한다(S270). That is, after the exchange of positions of one side and the other side of the cylindrical mold is completed, one side of the cylindrical mold combines the shield stage to protect the formed pattern, and the other side of the cylindrical mold uses a pattern mask to perform UV exposure. To combine. Accordingly, the second UV exposure is performed and the shield stage coupled to the lower pattern mask is removed (S270).
한편, UV 노광의 수행 횟수는 원통형 금형의 외주면에 결합된 패턴 마스크의 크기에 따라 결정된다. 예를 들어 원통형 금형의 외주면에 결합되는 패턴 마스크의 크기가 원통형 금형의 외주면의 1/3 크기인 경우, 1/3 크기의 패턴 마스크를 원통형 금형의 일측면에 결합하고, 2/3 크기의 원통형 금형의 타측면에는 쉴드 스테이지를 결합하여 제1차 UV 노광을 실시한다. On the other hand, the number of times of performing the UV exposure is determined according to the size of the pattern mask bonded to the outer peripheral surface of the cylindrical mold. For example, when the size of the pattern mask coupled to the outer circumferential surface of the cylindrical mold is 1/3 the size of the outer circumferential surface of the cylindrical mold, the 1/3 size pattern mask is combined to one side of the cylindrical mold, and the 2/3 size cylindrical The other side of the mold is coupled to the shield stage to perform the first UV exposure.
이후, 원통형 금형을 120° 회전하여 UV 노광이 실시되지 않은 원통형 금형의 타측면 중 어느 하나의 부분에 패턴 마스크를 결합하고, UV 노광이 실시된 원통형 금형의 일측면과 UV 노광이 실시되지 않은 원통형 금형의 타측면 중 다른 하나의 부분에 쉴드 스테이지를 결합하여 제2차 UV 노광을 실시한다.Subsequently, by rotating the cylindrical mold 120 °, the pattern mask is bonded to any one of the other sides of the cylindrical mold not subjected to UV exposure, and one side of the cylindrical mold subjected to UV exposure and the cylindrical surface not subjected to UV exposure. The secondary UV exposure is performed by coupling the shield stage to the other part of the other side of the mold.
마지막으로 원통형 금형을 120° 회전하여 UV 노광이 실시되지 않은 원통형 금형의 타측면 중 다른 하나의 부분에 패턴 마스크를 결합하고, 제1차 및 제2차 UV 노광이 실시된 원통형 금형의 일측면 및 타측면 중 어느 하나의 부분에 쉴드 스테이지를 결합하여 제3차 UV 노광을 실시한다.Finally, by rotating the cylindrical mold 120 °, the pattern mask is bonded to the other part of the other side of the cylindrical mold not subjected to the UV exposure, and one side of the cylindrical mold subjected to the first and second UV exposures and The third stage of UV exposure is performed by coupling the shield stage to any one of the other sides.
또한, S250 단계에서 패턴 마스크가 둘 이상 결합되어 원통형 금형의 외주면을 모두 감싸는 경우, 원통형 금형의 외주면에 결합된 패턴 마스크를 이용하여 원통형 금형에 패턴을 형성하기 위하여 원통형 금형의 외주면에 대응하는 UV 광원을 이용하여 UV 노광을 실시한다(S260).In addition, when two or more pattern masks are combined at step S250 to cover all of the outer circumferential surface of the cylindrical mold, a UV light source corresponding to the outer circumferential surface of the cylindrical mold to form a pattern on the cylindrical mold using the pattern mask coupled to the outer circumferential surface of the cylindrical mold. UV exposure is performed using (S260).
S260 단계에서의 UV 노광은 원통형 금형의 외주면을 따라 결합된 패턴 마스크에 실시되는 것이 바람직하며 UV 노광이 실시된 이후, 결합된 패턴 마스크를 제거한다(S270).The UV exposure in step S260 is preferably performed on the combined pattern mask along the outer circumferential surface of the cylindrical mold, and after the UV exposure is performed, the combined pattern mask is removed (S270).
원통형 금형의 외주면에 UV 노광이 모두 수행된 이후에는 UV 노광이 실시된 원통형 금형의 현상을 실시하고(S280), 필요에 따라 에칭공정을 추가로 수행할 수 있다(S290). S290 단계의 에칭공정은 습식에칭 또는 건식에칭 중 어느 하나 이상으로 수행되는 것이 바람직하다.After all the UV exposure is performed on the outer circumferential surface of the cylindrical mold, development of the cylindrical mold subjected to the UV exposure is performed (S280), and an etching process may be further performed as necessary (S290). The etching process of step S290 is preferably carried out by at least one of wet etching or dry etching.
한편, 원통형 금형의 전처리 단계(S210)는 도 8에 도시된 것과 같은 공정으로 수행될 수 있다.Meanwhile, the pretreatment step S210 of the cylindrical mold may be performed by a process as shown in FIG. 8.
이송장치에 결합된 원통형 금형을 전처리 공정을 수행할 수 있는 곳으로 이송한 후(S211), 원통형 금형의 표면에 무전해 니켈 도금 및 열처리를 수행한다(S212).After transferring the cylindrical mold coupled to the transfer device to a place where the pretreatment process can be performed (S211), electroless nickel plating and heat treatment are performed on the surface of the cylindrical mold (S212).
무전해 니켈 도금은 인(P) 함유량이 8 내지 20wt%인 니켈(Ni)층이 형성되도록 수행하며, 열처리는 원통형 금형 표면 경도가 600 내지 950Hv가 되는 것이 바람직하다.Electroless nickel plating is performed so that a nickel (Ni) layer having a phosphorus (P) content of 8 to 20 wt% is formed, and the heat treatment is preferably a cylindrical mold surface hardness of 600 to 950 Hv.
이후, 원통형 금형의 표면에 표면처리를 수행한다(S213). 표면처리는 원통형 금형의 표면 조도(Ra)가 1 내지 5㎚가 되도록 경면 처리를 실시하는 것으로써, 경면처리는 랩핑 공정과 폴리싱 공정으로 나뉘어 실시되며, 각각의 공정은 모두 공작기계에서 실시된다.After that, the surface treatment is performed on the surface of the cylindrical mold (S213). The surface treatment is a mirror surface treatment such that the surface roughness Ra of the cylindrical mold is 1 to 5 nm, and the mirror surface treatment is divided into a lapping process and a polishing process, and each process is performed in a machine tool.
랩핑 공정은 입도 크기 30㎛ 내지 1㎛의 규격을 갖는 알루미나(AL203) 랩핑필름 중 5 내지 7 종류의 서로 다른 입도 크기의 알루미나(AL203) 랩핑필름을 선택하여 입도 크기가 작은 순으로 3 내지 8회 단계적으로 실시한다.The lapping process is performed 3 to 8 times by selecting 5 to 7 different alumina (AL203) lapping films having different particle sizes from alumina (AL203) lapping films having a size of 30 μm to 1 μm. Carry out step by step.
폴리싱 공정은 입도 크기 3㎛ 내지 0.05㎛의 규격을 갖는 다이아몬드 서스펜션 중 3 내지 5 종류의 서로 다른 입도 크기의 다이아몬드 서스펜션을 선택하여 입도 크기가 작은 순으로 각각 25 내지 35분간 단계적으로 실시한다.The polishing process is carried out in steps of 25 to 35 minutes in the order of the smallest particle size, by selecting diamond suspensions of three to five different particle sizes among diamond suspensions having a particle size of 3 μm to 0.05 μm.
원통형 금형의 표면처리가 완료된 이후, 원통형 금형의 표면을 세정하고(S214), 필요에 따라 질소 블로잉 단계(S215)를 추가적으로 수행할 수 있다.After the surface treatment of the cylindrical mold is completed, the surface of the cylindrical mold is cleaned (S214), and if necessary, a nitrogen blowing step (S215) may be additionally performed.
본 발명은 이상에서 살펴본 바와 같이 바람직한 실시예를 들어 도시하고 설명하였으나, 상기한 실시예에 한정되지 아니하며 본 발명의 정신을 벗어나지 않는 범위 내에서 당해 발명이 속하는 기술분야에서 통상의 지식을 가진 자에 의해 다양한 변경과 수정이 가능할 것이다.Although the present invention has been shown and described with reference to the preferred embodiments as described above, it is not limited to the above embodiments and those skilled in the art without departing from the spirit of the present invention. Various changes and modifications will be possible.

Claims (26)

  1. 원통형 스탬프 제작 장치에 있어서, In the cylindrical stamp manufacturing apparatus,
    UV 노광을 위해 전처리가 수행되는 원통형 금형;A cylindrical mold in which pretreatment is performed for UV exposure;
    상기 원통형 금형을 이동하기 위한 이송 장치;A transfer device for moving the cylindrical mold;
    상기 원통형 금형에 패턴을 형성하기 위한 하나 이상의 패턴 마스크; 및 One or more pattern masks for forming a pattern in the cylindrical mold; And
    상기 UV 노광을 실시하기 위한 UV 광원UV light source for performing the UV exposure
    을 포함하여 이루어지는 원통형 패턴 마스크를 이용한 원통형 스탬프 제작 장치.Cylindrical stamp production apparatus using a cylindrical pattern mask comprising a.
  2. 제 1 항에 있어서, The method of claim 1,
    상기 원통형 금형의 일측면에 상기 패턴 마스크가 하나 결합되는 경우, 상기 원통형 금형의 타측면에는 상기 UV 노광을 차단하기 위한 반원통 형태의 쉴드 스테이지를 더 포함하는 것을 특징으로 하는 원통형 패턴 마스크를 이용한 원통형 스탬프 제작 장치.When one of the pattern mask is coupled to one side of the cylindrical mold, the other side of the cylindrical mold cylindrical using a cylindrical pattern mask further comprises a semi-cylindrical shield stage for blocking the UV exposure Stamp production device.
  3. 제 2 항에 있어서, The method of claim 2,
    상기 패턴 마스크는 상기 원통형 금형의 축을 중심으로 반원통 형태로 하나 이상이 결합되어 원통형 금형의 일측면을 감싸도록 형성되는 것을 특징으로 하는 원통형 패턴 마스크를 이용한 원통형 스탬프 제작 장치.The pattern mask is a cylindrical stamp manufacturing apparatus using a cylindrical pattern mask, characterized in that one or more are combined to form a semi-cylindrical shape around the axis of the cylindrical mold to surround one side of the cylindrical mold.
  4. 제 3 항에 있어서, The method of claim 3, wherein
    상기 쉴드 스테이지는 하나의 상기 패턴 마스크가 상기 원통형 금형의 일측면에 결합되는 경우, 상기 패턴 마스크가 결합된 상기 원통형 금형의 타측면에 결합되는 것을 특징으로 하는 원통형 패턴 마스크를 이용한 원통형 스탬프 제작 장치.The shield stage is a cylindrical stamp manufacturing apparatus using a cylindrical pattern mask, characterized in that when the one pattern mask is coupled to one side of the cylindrical mold, the other side of the cylindrical mold to which the pattern mask is coupled.
  5. 제 4 항에 있어서, The method of claim 4, wherein
    상기 UV 광원은 상기 원통형 금형에 결합된 상기 패턴 마스크에 UV 노광을 수행할 수 있도록 구비되는 것을 특징으로 하는 원통형 패턴 마스크를 이용한 원통형 스탬프 제작 장치.The UV light source is a cylindrical stamp manufacturing apparatus using a cylindrical pattern mask, characterized in that it is provided to perform UV exposure to the pattern mask coupled to the cylindrical mold.
  6. 제 5 항에 있어서, The method of claim 5,
    상기 UV 노광은 상기 쉴드 스테이지가 결합되지 않은 상기 패턴 마스크에 실시되는 것을 특징으로 하는 원통형 패턴 마스크를 이용한 원통형 스탬프 제작 장치.The UV exposure is a cylindrical stamp manufacturing apparatus using a cylindrical pattern mask, characterized in that the shielding mask is coupled to the pattern mask is not coupled.
  7. 제 1 항에 있어서, The method of claim 1,
    상기 전처리는 무전해 니켈 도금, 열처리, 경면처리, 세정 또는 질소 블로잉 중 어느 하나 이상을 수행하는 것을 특징으로 하는 원통형 패턴 마스크를 이용한 원통형 스탬프 제작 장치.The pretreatment is a cylindrical stamp manufacturing apparatus using a cylindrical pattern mask, characterized in that performing any one or more of electroless nickel plating, heat treatment, mirror treatment, cleaning or nitrogen blowing.
  8. 제 7 항에 있어서, The method of claim 7, wherein
    상기 무전해 니켈 도금은 인(P) 함유량이 8 내지 20 wt%인 니켈(Ni) 층이 형성되는 것을 특징으로 하는 원통형 패턴 마스크를 이용한 원통형 스탬프 제작 장치.The electroless nickel plating is a cylindrical stamp manufacturing apparatus using a cylindrical pattern mask, characterized in that the nickel (Ni) layer having a phosphorus (P) content of 8 to 20 wt% is formed.
  9. 제 7 항에 있어서, The method of claim 7, wherein
    상기 열처리는 상기 원통형 금형의 표면경도가 600 내지 950 HV인 것을 특징으로 하는 원통형 패턴 마스크를 이용한 원통형 스탬프 제작 장치.The heat treatment is a cylindrical stamp manufacturing apparatus using a cylindrical pattern mask, characterized in that the surface hardness of the cylindrical mold is 600 to 950 HV.
  10. 제 7 항에 있어서, The method of claim 7, wherein
    상기 경면처리는 표면 조도(Ra) 1 내지 5㎚인 것을 특징으로 하는 원통형 패턴 마스크를 이용한 원통형 스탬프 제작 장치.The mirror surface treatment is a cylindrical stamp manufacturing apparatus using a cylindrical pattern mask, characterized in that the surface roughness (Ra) 1 to 5nm.
  11. 제 1 항에 있어서, The method of claim 1,
    상기 이송 장치는 상기 원통형 금형의 중심 축에 결합되어 상기 원통형 금형을 좌우 방향으로 수평 이동시키거나 상하 방향으로 수직 이동이 시키는 것을 특징으로 하는 원통형 패턴 마스크를 이용한 원통형 스탬프 제작 장치.The transfer device is coupled to the central axis of the cylindrical mold cylindrical stamp manufacturing apparatus using a cylindrical pattern mask, characterized in that to move the cylindrical mold horizontally in the horizontal direction or vertical movement in the vertical direction.
  12. 제 1 항에 있어서, The method of claim 1,
    상기 원통형 금형 및 상기 패턴 마스크는 상호 매칭되는 위치에 결합되기 위해 얼라인(align) 포인트 마크가 하나 이상 표시되어 있는 것을 특징으로 하는 원통형 패턴 마스크를 이용한 원통형 스탬프 제작 장치.The cylindrical mold and the pattern mask is a cylindrical stamp manufacturing apparatus using a cylindrical pattern mask, characterized in that one or more (align) point mark is displayed to be coupled to a mutually matching position.
  13. 원통형 스탬프 제작 방법에 있어서, In the cylindrical stamp manufacturing method,
    상기 원통형 금형을 전처리하는 제1단계;A first step of pretreating the cylindrical mold;
    상기 원통형 금형에 포토레지스트를 도포하는 제2단계;Applying a photoresist to the cylindrical mold;
    상기 원통형 금형에 패턴 마스크를 결합하는 제3단계;Coupling a pattern mask to the cylindrical mold;
    상기 원통형 금형에 UV 노광을 수행하는 제4단계; 및A fourth step of performing UV exposure on the cylindrical mold; And
    상기 원통형 금형에 결합된 상기 패턴 마스크를 분리하는 제5단계;A fifth step of separating the pattern mask coupled to the cylindrical mold;
    를 포함하여 이루어지는 원통형 패턴 마스크를 이용한 원통형 스탬프 제작 방법.Cylindrical stamp production method using a cylindrical pattern mask comprising a.
  14. 제 13 항에 있어서, The method of claim 13,
    상기 제2단계 이후 또는 제3단계 이전에After the second step or before the third step
    상기 원통형 금형이 이송장치를 통해 UV 노광 장치로 이송되는 단계를 더 포함하는 것을 특징으로 하는 원통형 패턴 마스크를 이용한 원통형 스탬프 제작 방법.The cylindrical mold is a cylindrical stamp manufacturing method using a cylindrical pattern mask, characterized in that further comprising the step of transferring to the UV exposure apparatus through a transfer device.
  15. 제 14 항에 있어서, The method of claim 14,
    상기 이송 장치는 상기 원통형 금형의 중심 축에 결합되어 상기 원통형 금형을 좌우 방향으로 수평 이동시키거나 상하 방향으로 수직 이동시키는 것을 특징으로 하는 원통형 패턴 마스크를 이용한 원통형 스탬프 제작 방법.The transfer device is coupled to the central axis of the cylindrical mold cylindrical stamp manufacturing method using a cylindrical pattern mask, characterized in that for moving the cylindrical mold horizontally in the horizontal direction or vertically in the vertical direction.
  16. 제 13 항에 있어서, The method of claim 13,
    상기 패턴 마스크를 결합하는 상기 제3단계는 The third step of combining the pattern mask is
    상기 원통형 금형에 하나 이상의 반원통 형태의 패턴 마스크를 결합하는 제1과정; 및Coupling at least one semi-cylindrical pattern mask to the cylindrical mold; And
    상기 원통형 금형의 일측면에 하나의 패턴 마스크가 결합되는 경우, 상기 원통형 금형의 타측면에 쉴드 스테이지를 결합하거나, 상기 원통형 금형의 일측 및 타측에 상기 패턴 마스크가 각각 결합되는 경우, 상기 쉴드 스테이지 결합을 생략하는 제2과정When one pattern mask is coupled to one side of the cylindrical mold, the shield stage is coupled to the other side of the cylindrical mold, or when the pattern mask is coupled to one side and the other side of the cylindrical mold, the shield stage is coupled. Second step to omit
    을 포함하여 이루어지는 것을 특징으로 하는 원통형 패턴 마스크를 이용한 원통형 스탬프 제작 방법.Cylindrical stamp production method using a cylindrical pattern mask, characterized in that comprises a.
  17. 제 16 항에 있어서, The method of claim 16,
    상기 원통형 금형의 일측에 하나의 패턴 마스크가 결합되는 경우에 상기 UV 노광을 수행하는 제4단계는The fourth step of performing the UV exposure when one pattern mask is coupled to one side of the cylindrical mold
    상기 패턴 마스크에 제1차 UV 노광을 수행하는 제1과정;Performing a first UV exposure on the pattern mask;
    상기 패턴 마스크 및 상기 쉴드 스테이지를 분리하는 제2과정;A second process of separating the pattern mask and the shield stage;
    상기 원통형 금형을 회전한 후, 상기 제1차 UV 노광이 수행된 상기 원통형 금형의 일측에 상기 쉴드 스테이지를 결합하며, 상기 UV 노광이 수행되지 않은 상기 원통형 금형의 타측에 상기 패턴 마스크를 결합하는 제3과정;After rotating the cylindrical mold, the shield stage is coupled to one side of the cylindrical mold on which the first UV exposure has been performed, and the pattern mask is coupled to the other side of the cylindrical mold on which the UV exposure has not been performed. 3 courses;
    상기 패턴 마스크에 제2차 UV 노광을 수행하는 제4과정; 및A fourth process of performing a second UV exposure on the pattern mask; And
    상기 패턴 마스크 및 상기 쉴드 스테이지를 분리하는 제5과정A fifth process of separating the pattern mask and the shield stage
    을 포함하여 이루어지는 것을 특징으로 하는 원통형 패턴 마스크를 이용한 원통형 스탬프 제작 방법.Cylindrical stamp production method using a cylindrical pattern mask, characterized in that comprises a.
  18. 제 13 항에 있어서,The method of claim 13,
    상기 제5단계 이후에After the fifth step
    상기 UV 노광이 실시된 상기 원통형 금형을 현상하는 단계; 및Developing the cylindrical mold subjected to the UV exposure; And
    상기 원통형 금형을 에칭하는 단계Etching the cylindrical mold
    를 더 포함하는 것을 특징으로 하는 원통형 패턴 마스크를 이용한 원통형 스탬프 제작 방법.Cylindrical stamp production method using a cylindrical pattern mask, characterized in that it further comprises.
  19. 제 13 항에 있어서,The method of claim 13,
    상기 전처리하는 제1단계는The first step of preprocessing
    상기 원통형 금형의 표면에 무전해 니켈 도금하는 제1과정;A first process of electroless nickel plating the surface of the cylindrical mold;
    상기 원통형 금형의 표면에 열처리 및 경면처리를 수행하는 제2과정;A second step of performing heat treatment and mirror surface treatment on the surface of the cylindrical mold;
    상기 원통형 금형의 표면을 세정하는 제3과정; 및A third step of cleaning the surface of the cylindrical mold; And
    상기 원통형 금형의 표면을 질소 블로잉하는 제4과정A fourth process of nitrogen blowing the surface of the cylindrical mold
    을 포함하는 것을 특징으로 하는 원통형 패턴 마스크를 이용한 원통형 스탬프 제작 방법.Cylindrical stamp production method using a cylindrical pattern mask comprising a.
  20. 제 19 항에 있어서, The method of claim 19,
    상기 무전해 니켈 도금은 인(P) 함유량의 8 내지 20 wt%인 니켈(Ni) 층이 형성되는 것을 특징으로 하는 원통형 패턴 마스크를 이용한 원통형 스탬프 제작 방법.The electroless nickel plating is a cylindrical stamp manufacturing method using a cylindrical pattern mask, characterized in that the nickel (Ni) layer of 8 to 20 wt% of the phosphorus (P) content is formed.
  21. 제 19 항에 있어서, The method of claim 19,
    상기 열처리는 상기 원통형 금형의 표면경도가 600 내지 950HV 되도록 하는 것을 특징으로 하는 원통형 패턴 마스크를 이용한 원통형 스탬프 제작 방법.The heat treatment is a cylindrical stamp manufacturing method using a cylindrical pattern mask, characterized in that the surface hardness of the cylindrical mold 600 to 950HV.
  22. 제 19 항에 있어서, The method of claim 19,
    상기 경면처리는 표면 조도(Ra)가 1 내지 5㎚인 것을 특징으로 하는 원통형 패턴 마스크를 이용한 원통형 스탬프 제작 방법.The mirror surface treatment is a method of producing a cylindrical stamp using a cylindrical pattern mask, characterized in that the surface roughness (Ra) is 1 to 5nm.
  23. 제 13 항에 있어서, The method of claim 13,
    상기 포토레지스트를 도포하는 제2단계는 The second step of applying the photoresist is
    상기 포토레지스트를 도포하기 위한 스프레이코터의 노즐 위치를 설정하는 제1과정;A first step of setting a nozzle position of a spray coater for applying the photoresist;
    상기 포토레지스트의 도포를 위한 공정 값을 설정하는 제2과정;Setting a process value for applying the photoresist;
    상기 스프레이코터를 이용하여 상기 포토레지스트를 도포하는 제3과정; 및 A third step of applying the photoresist using the spray coater; And
    도포된 상기 포토레지스트를 건조하는 제4과정Fourth step of drying the applied photoresist
    을 포함하는 것을 특징으로 하는 원통형 패턴 마스크를 이용한 원통형 스탬프 제작 방법.Cylindrical stamp production method using a cylindrical pattern mask comprising a.
  24. 제 13 항에 있어서, The method of claim 13,
    상기 패턴 마스크는 상기 원통형 금형의 축을 중심으로 반원통 형태로 하나 이상이 결합되어 원통형 금형의 외주면을 감싸도록 형성되는 것을 특징으로 하는 원통형 패턴 마스크를 이용한 원통형 스탬프 제작 방법.The pattern mask is a cylindrical stamp manufacturing method using a cylindrical pattern mask, characterized in that one or more are combined to form a semi-cylindrical shape around the axis of the cylindrical mold to surround the outer peripheral surface of the cylindrical mold.
  25. 제 24 항에 있어서, The method of claim 24,
    상기 원통형 금형 및 상기 패턴 마스크는 상호 매칭되는 위치에 결합되기 위해 얼라인(align) 포인트 마크가 하나 이상 표시되어 있는 것을 특징으로 하는 원통형 패턴 마스크를 이용한 원통형 스탬프 제작 방법.The cylindrical mold and the pattern mask is a cylindrical stamp manufacturing method using a cylindrical pattern mask, characterized in that one or more (align) point mark is displayed to be coupled to a mutually matching position.
  26. 제 18 항에 있어서, The method of claim 18,
    상기 에칭은 건식 또는 습식 에칭 중 어느 하나인 것을 특징으로 하는 원통형 패턴 마스크를 이용한 원통형 스탬프 제작 방법.The etching is a cylindrical stamp manufacturing method using a cylindrical pattern mask, characterized in that any one of dry or wet etching.
PCT/KR2012/000752 2011-03-18 2012-01-31 Apparatus and method for manufacturing a cylindrical stamp using a cylindrical pattern mask WO2012128467A2 (en)

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KR101878574B1 (en) * 2016-12-28 2018-07-13 부산대학교 산학협력단 Apparatus and mehod for making interference pattern on the curved surface of solid

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JP4286047B2 (en) * 2003-04-10 2009-06-24 三菱レイヨン株式会社 Manufacturing method of cylindrical mold member for uneven surface structure sheet transfer molding
JP4835277B2 (en) * 2006-06-15 2011-12-14 大日本印刷株式会社 Pattern forming body manufacturing method and imprint transfer apparatus
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2851752A4 (en) * 2012-05-14 2015-06-03 Asahi Chemical Ind Roller mold manufacturing device and manufacturing method
US10401729B2 (en) 2012-05-14 2019-09-03 Asahi Kasei Kabushiki Kaisha Roller mold manufacturing apparatus and method

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