WO2012117758A1 - ドライクリーニング方法 - Google Patents
ドライクリーニング方法 Download PDFInfo
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- WO2012117758A1 WO2012117758A1 PCT/JP2012/051025 JP2012051025W WO2012117758A1 WO 2012117758 A1 WO2012117758 A1 WO 2012117758A1 JP 2012051025 W JP2012051025 W JP 2012051025W WO 2012117758 A1 WO2012117758 A1 WO 2012117758A1
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- WO
- WIPO (PCT)
- Prior art keywords
- composition
- cleaning
- gas
- diketone
- dry cleaning
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract description 31
- 238000005108 dry cleaning Methods 0.000 title claims abstract description 18
- 239000000203 mixture Substances 0.000 claims abstract description 43
- 238000004140 cleaning Methods 0.000 claims abstract description 37
- QAMFBRUWYYMMGJ-UHFFFAOYSA-N hexafluoroacetylacetone Chemical group FC(F)(F)C(=O)CC(=O)C(F)(F)F QAMFBRUWYYMMGJ-UHFFFAOYSA-N 0.000 claims description 7
- SHXHPUAKLCCLDV-UHFFFAOYSA-N 1,1,1-trifluoropentane-2,4-dione Chemical compound CC(=O)CC(=O)C(F)(F)F SHXHPUAKLCCLDV-UHFFFAOYSA-N 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 230000008021 deposition Effects 0.000 abstract description 5
- 239000007789 gas Substances 0.000 description 32
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 26
- 239000011787 zinc oxide Substances 0.000 description 13
- 238000005530 etching Methods 0.000 description 10
- 238000000151 deposition Methods 0.000 description 8
- 239000000395 magnesium oxide Substances 0.000 description 6
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 6
- 238000010790 dilution Methods 0.000 description 5
- 239000012895 dilution Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 2
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 2
- 229910052951 chalcopyrite Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- YRAJNWYBUCUFBD-UHFFFAOYSA-N 2,2,6,6-tetramethylheptane-3,5-dione Chemical compound CC(C)(C)C(=O)CC(=O)C(C)(C)C YRAJNWYBUCUFBD-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- -1 Zn0.5Mg0.5O Chemical compound 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
- B08B9/02—Cleaning pipes or tubes or systems of pipes or tubes
- B08B9/027—Cleaning the internal surfaces; Removal of blockages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
Definitions
- the present invention deposits zinc oxide used as a transparent electrode material or semiconductor material, or MgxZn1-xO (0 ⁇ x ⁇ 1) used as a new buffer layer for chalcopyrite solar cells.
- the present invention relates to a dry cleaning method for removing a composition represented by MgaZnbOHc (0 ⁇ a ⁇ 1, 0 ⁇ b ⁇ 1, 0 ⁇ c ⁇ 1, and 0.5 ⁇ a + b ⁇ 1).
- Zinc oxide is a compound that has recently attracted attention as a transparent electrode material and a semiconductor material.
- MgxZn1-xO (0 ⁇ x ⁇ 1) is a composition that has recently attracted attention as a new buffer layer for chalcopyrite solar cells.
- MOCVD or sputtering using Zn (C11H19O2) 2, Mg (C11H19O2) 2, or the like as a raw material is used.
- Zn (C11H19O2) 2, Mg (C11H19O2) 2, or the like as a raw material.
- unnecessary deposits are formed on the inner wall of the film forming chamber, the wafer stage, and the inner wall of the exhaust pipe.
- composition represented by the composition formula MGaZnbOHc (0 ⁇ a ⁇ 1, 0 ⁇ b ⁇ 1, 0 ⁇ c ⁇ 1, and 0.5 ⁇ a + b ⁇ 1) adheres. If these unnecessary deposits increase, it causes particles and deteriorates the device performance.
- Patent Document 1 In the method described in Patent Document 1 described above, a plasma environment is required, and it is difficult to etch zinc oxide on reactor walls and exhaust pipes where it is difficult for plasma-excited radicals and ion species to reach. Further, the method described in Patent Document 2 requires a high temperature environment of 1000 ° C. or higher, and is not practical when assuming deposit cleaning in the film forming apparatus.
- an apparatus for depositing a composition represented by the composition formula MgxZn1-xO (0 ⁇ x ⁇ 1) when the composition is deposited, the inner wall of the deposition chamber of the deposition apparatus, It is represented by the composition formula MgaZnbOHc (0 ⁇ a ⁇ 1, 0 ⁇ b ⁇ 1, 0 ⁇ c ⁇ 1, and 0.5 ⁇ a + b ⁇ 1) on the wafer stage, the inner wall of the exhaust pipe and the like that do not require film formation.
- An object of the present invention is to provide a dry cleaning method for removing the deposit at a low temperature.
- the inventors of the present invention have a composition represented by the composition formula MgaZnbOHc (0 ⁇ a ⁇ 1, 0 ⁇ b ⁇ 1, 0 ⁇ c ⁇ 1, and 0.5 ⁇ a + b ⁇ 1).
- MgaZnbOHc 0. ⁇ a ⁇ 1, 0 ⁇ b ⁇ 1, 0 ⁇ c ⁇ 1, and 0.5 ⁇ a + b ⁇ 1.
- the composition formula MgaZnbOHc (0 ⁇ a ⁇ 1) is deposited in the film forming chamber or the exhaust pipe of the apparatus for forming the composition represented by the composition formula MgxZn1-xO (0 ⁇ x ⁇ 1). , 0 ⁇ b ⁇ 1, 0 ⁇ c ⁇ 1, and 0.5 ⁇ a + b ⁇ 1) in a dry cleaning method for removing a composition using a cleaning gas, a cleaning gas containing ⁇ -diketone
- a dry cleaning method (first method) is provided, wherein the composition is removed by reacting the composition deposited at a temperature of 100 ° C. or higher and 400 ° C. or lower with the cleaning gas. It is.
- the first method may be a dry cleaning method (second method) in which the ⁇ -diketone is hexafluoroacetylacetone or trifluoroacetylacetone.
- the cleaning gas contains at least one kind of gas selected from the group consisting of He, Ar, N 2 and O 2 (third method) ).
- composition formula MgaZnbOHc (0 ⁇ a ⁇ 1, 0 ⁇ b ⁇ 1, 0 ⁇ c ⁇ 1, and 0.5 ⁇ a + b ⁇ 1 deposited in the film forming chamber or the exhaust pipe by the dry cleaning method of the present invention. ) Can be removed at a low temperature of 400 ° C. or lower.
- What is to be removed in the present invention is a composition represented by MgaZnbOHc (0 ⁇ a ⁇ 1, 0 ⁇ b ⁇ 1, 0 ⁇ c ⁇ 1, and 0.5 ⁇ a + b ⁇ 1).
- Specific examples include ZnO, MgO, Mg0.5Zn0.5O, Mg0.5Zn0.5OH0.1, and the like.
- the present invention provides an apparatus for depositing a composition represented by the composition formula MgxZn1-xO (0 ⁇ x ⁇ 1) (for example, a CVD apparatus, a sputtering apparatus, a vacuum evaporation apparatus, etc.) on the substrate.
- a composition represented by the composition formula MgxZn1-xO (0 ⁇ x ⁇ 1)
- the composition formula MgaZnbOHc (0 ⁇ a ⁇ 1, 0 ⁇ b ⁇ 1, 0 ⁇ c ⁇ 1
- the composition represented by 0.5 ⁇ a + b ⁇ 1) is deposited, this deposit is removed.
- ⁇ -diketone In the dry cleaning method of the present invention, it is necessary that at least one type of ⁇ -diketone is contained in the cleaning gas.
- ⁇ -diketone examples include hexafluoroacetylacetone, trifluoroacetylacetone, acetylacetone, and dipivaloylmethane (H-DPM).
- H-DPM dipivaloylmethane
- hexafluoroacetylacetone and trifluoroacetylacetone are preferred because they can be etched at high speed. The etching rate of the deposit increases as the concentration of ⁇ -diketone contained in the cleaning gas increases.
- the concentration of ⁇ -diketone is preferably 10% by volume or more and 80% by volume or less.
- the cleaning gas may be mixed with at least one gas selected from the group consisting of the above-mentioned ⁇ -diketone and an inert gas such as He, Ar, N2, or O2, and the concentration thereof is not particularly limited. .
- the temperature of the deposit to be removed is preferably 100 ° C. or higher and 400 ° C. or lower, and particularly preferably 150 ° C. or higher and 400 ° C. or lower in order to obtain a higher etching rate.
- the pressure in the chamber during cleaning is not particularly limited, but is preferably 0.1 kPa or more and 101.3 kPa or less that is usually used in film formation.
- the composition represented by MgaZnbOHc (0 ⁇ a ⁇ 1, 0 ⁇ b ⁇ 1, 0 ⁇ c ⁇ 1, and 0.5 ⁇ a + b ⁇ 1) is removed. Is possible.
- FIG. 1 is a schematic system diagram of the CVD apparatus used in this test.
- the film formation chamber 1 is provided with a stage 5 that supports a wafer for film formation. Heaters 61 and 62 are provided outside the film forming chamber 1 and inside the stage 5.
- a gas pipe 41 for introducing gas and a gas pipe 42 for exhausting gas are connected to the film forming chamber 1.
- the ⁇ -diketone supply system 21 and the dilution gas supply system 22 are connected to a gas pipe 41 via valves 31 and 32.
- the vacuum pump 8 is connected to the gas pipe 42 via the valve 33.
- the pressure inside the film forming chamber 1 is controlled by a valve 33 based on an indication value of a pressure gauge (not shown) attached to the film forming chamber 1.
- the deposit sample 7 is a MGaZnbOHc film (0 ⁇ a ⁇ 1, 0 ⁇ b ⁇ 1, 0 ⁇ c ⁇ 1, and 0.5 ⁇ a + b ⁇ 1) formed on a Si wafer by 2 ⁇ m. [Shape 3 cm ⁇ 3 cm piece] was placed on the stage 5 and subjected to a cleaning test. Further, a thermocouple for measuring the temperature of the deposit sample 7 was installed between the deposit sample 7 and the stage 5 (not shown in the figure).
- the etching amount of the film was calculated from the film thickness reduction by measuring the change in film thickness before and after the test by cross-sectional SEM observation.
- the etching rate is a value obtained by dividing the amount of film reduction by the etching time.
- the etching time is defined as the time from the start of the introduction of the cleaning gas to the end of the introduction, and is 3 minutes in this embodiment.
- the operation method After the vacuum in the film forming chamber 1 and the gas pipes 41 and 42 is reduced to less than 10 Pa, the pressure inside the film forming chamber 1 and the temperatures of the heaters 61 and 62 are set to predetermined values. After confirming that the heaters 61 and 62 have reached a predetermined value, the valves 31 and 32 are opened, and the cleaning gas is introduced from the ⁇ -diketone supply system 21 and the dilution gas supply system 22. At the same time, the temperature of the deposit sample 7 is measured by the installed thermocouple. After a predetermined time (3 minutes), the introduction of the cleaning gas was stopped, the inside of the film forming chamber 1 was replaced with vacuum, the deposit sample 7 was taken out, and the etching amount was measured.
- Table 1 shows the cleaning object and the cleaning conditions and the measurement results of the etching rate in this example.
- the deposition chamber pressure is 2.7 kPa
- hexafluoroacetylacetone diluted to 50% by volume with N 2 is used as the cleaning gas
- the film composition of the deposit sample 7 is ZnO, Zn0.5Mg0.5O, Zn0.5Mg0.5OH0.1
- Cleaning tests were performed on Zn0.5OH, Mg0.5OH, and MgO at the various temperatures described above (Examples 1 to 24).
- the temperature of the deposit sample 7 was any of 110 ° C., 160 ° C., 200 ° C., and 380 ° C.
- Example 25 when the ⁇ -diketone is changed to trifluoroacetylacetone, the others are carried out in the same manner as in Example 3 (Example 25), or the dilution gas is changed to O 2, Ar or a mixture thereof, and others are the same as in Example 3.
- Example 29 When carried out (Examples 26 to 28), when carried out in the same manner as in Example 3 except that the film forming chamber pressure was 40.0 kPa (Example 29), the concentration of hexafluoroacetylacetone was 7, 15, 75, When the same procedure as in Example 3 was performed except that the amount was 85 and 100% by volume (Examples 30 to 34), Example 3 was used except that a mixture of hexafluoroacetylacetone and trifluoroacetylacetone was used as ⁇ -diketone. In the same manner as in Example 35 (Example 35), cleaning was possible in the same manner.
- Table 2 shows the cleaning object and cleaning conditions in this comparative example, and the measurement results of the etching rate.
- the film composition of the deposit sample 7 is ZnO, Zn0.5Mg0.5O, MgO, Zn0.5Mg0.5OH0.1, Zn0.5OH, Mg0.5OH, with a deposition chamber pressure of 2.7 kPa and a dilution gas of N2.
- the cleaning test by the above operation was performed by setting the temperature of the deposit sample 7 to 90 ° C and 420 ° C, respectively. As a result, when ⁇ -diketone is not contained in the cleaning gas (Comparative Example 1), the film of the deposit sample 7 is removed regardless of whether the temperature of the deposit sample 7 is 90 ° C. or 420 ° C. It wasn't.
- the present invention can be used for cleaning an apparatus for depositing a composition represented by the general formula MgxZn1-xO (0 ⁇ x ⁇ 1) (for example, a CVD apparatus, a sputtering apparatus, a vacuum evaporation apparatus, etc.). It is represented by a composition formula MgaZnbOHc (0 ⁇ a ⁇ 1, 0 ⁇ b ⁇ 1, 0 ⁇ c ⁇ 1, and 0.5 ⁇ a + b ⁇ 1) attached to the film forming chamber or the exhaust pipe of the film forming apparatus. This is effective in cleaning the composition to be formed at a low temperature and without opening the apparatus.
- a composition represented by the general formula MgxZn1-xO (0 ⁇ x ⁇ 1)
- MgaZnbOHc (0 ⁇ a ⁇ 1, 0 ⁇ b ⁇ 1, 0 ⁇ c ⁇ 1, and 0.5 ⁇ a + b ⁇ 1 attached to the film forming chamber or the exhaust pipe of the film
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Abstract
Description
本実施例におけるクリーニング対象物及びクリーニング条件と、そのエッチング速度の測定結果を表1に示す。成膜チャンバー圧力2.7kPa、クリーニングガスとして、N2により50体積%に希釈したヘキサフルオロアセチルアセトンを用い、堆積物サンプル7の膜組成がZnO、Zn0.5Mg0.5O、Zn0.5Mg0.5OH0.1、Zn0.5OH、Mg0.5OH、MgOに対し、それぞれ種々の温度にて、上記操作によるクリーニング試験を実施した(実施例1~24)。その結果、堆積物サンプル7の温度が、110℃、160℃、200℃、380℃のいずれの場合において、クリーニング可能であることが判った。
21・・・β―ジケトン供給系
22・・・希釈ガス供給系
31、32、33・・・バルブ
41、42・・・ガス配管
5・・・ステージ
61、62・・・ヒーター
7・・・堆積物サンプル
8・・・真空ポンプ
Claims (3)
- 組成式MgxZn1-xO(0≦x≦1)で表される組成物を成膜する装置の成膜チャンバー内あるいは排気配管内に堆積する組成式MgaZnbOHc(0≦a≦1、0≦b≦1、0≦c≦1、且つ、0.5≦a+b≦1)で表される組成物を、クリーニングガスを用いて除去するドライクリーニング方法において、β―ジケトンを含むクリーニングガスを用い、100℃以上400℃以下の温度で堆積する該組成物と該クリーニングガスを反応させることにより、該組成物を除去することを特徴とする、ドライクリーニング方法。
- 前記β―ジケトンが、ヘキサフルオロアセチルアセトン又はトリフルオロアセチルアセトンであることを特徴とする、請求項1に記載のドライクリーニング方法。
- 前記クリーニングガス中に、He、Ar、N2、O2からなる群から選ばれる少なくとも1種類以上のガスが含有されていることを特徴とする請求項1又は2に記載のドライクリーニング方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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KR1020137021436A KR20130103625A (ko) | 2011-03-03 | 2012-01-19 | 드라이클리닝 방법 |
US13/980,784 US20130333729A1 (en) | 2011-03-03 | 2012-01-19 | Dry Cleaning Method |
EP12751926.2A EP2650913A4 (en) | 2011-03-03 | 2012-01-19 | DRY CLEANING METHOD |
CN2012800115714A CN103430290A (zh) | 2011-03-03 | 2012-01-19 | 干洗方法 |
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JP2011-046149 | 2011-03-03 | ||
JP2011046149A JP2012186190A (ja) | 2011-03-03 | 2011-03-03 | ドライクリーニング方法 |
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WO2012117758A1 true WO2012117758A1 (ja) | 2012-09-07 |
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PCT/JP2012/051025 WO2012117758A1 (ja) | 2011-03-03 | 2012-01-19 | ドライクリーニング方法 |
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US (1) | US20130333729A1 (ja) |
EP (1) | EP2650913A4 (ja) |
JP (1) | JP2012186190A (ja) |
KR (1) | KR20130103625A (ja) |
CN (1) | CN103430290A (ja) |
TW (1) | TW201241914A (ja) |
WO (1) | WO2012117758A1 (ja) |
Cited By (1)
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WO2013140926A1 (ja) * | 2012-03-22 | 2013-09-26 | セントラル硝子株式会社 | 成膜装置内の金属膜のドライクリーニング方法 |
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CN105132887B (zh) * | 2015-06-19 | 2017-07-11 | 广东汉能薄膜太阳能有限公司 | 一种真空镀膜设备中Zn杂质元素的去除方法 |
FR3046801B1 (fr) * | 2016-01-19 | 2020-01-17 | Kobus Sas | Procede d'elimination d'un depot metallique dispose sur une surface dans une enceinte |
US11282714B2 (en) * | 2016-07-26 | 2022-03-22 | Central Glass Company, Limited | Etching method and etching device |
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JPH05254998A (ja) | 1992-03-16 | 1993-10-05 | Matsushita Electric Ind Co Ltd | 酸化亜鉛ウィスカ製造装置のクリーニング方法 |
JP2001284330A (ja) * | 2000-03-31 | 2001-10-12 | Hitachi Ltd | 半導体装置の製造方法、及び製造装置 |
WO2006028118A1 (ja) * | 2004-09-08 | 2006-03-16 | Rohm Co., Ltd | 半導体発光素子 |
JP2010003872A (ja) | 2008-06-20 | 2010-01-07 | Kaneka Corp | 酸化亜鉛膜のドライエッチング方法 |
JP2010276483A (ja) * | 2009-05-28 | 2010-12-09 | Rohm Co Ltd | 紫外光検出素子及び紫外光検出装置 |
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US5993679A (en) * | 1997-11-06 | 1999-11-30 | Anelva Corporation | Method of cleaning metallic films built up within thin film deposition apparatus |
US20050029492A1 (en) * | 2003-08-05 | 2005-02-10 | Hoshang Subawalla | Processing of semiconductor substrates with dense fluids comprising acetylenic diols and/or alcohols |
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2011
- 2011-03-03 JP JP2011046149A patent/JP2012186190A/ja active Pending
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2012
- 2012-01-19 CN CN2012800115714A patent/CN103430290A/zh active Pending
- 2012-01-19 KR KR1020137021436A patent/KR20130103625A/ko not_active Application Discontinuation
- 2012-01-19 US US13/980,784 patent/US20130333729A1/en not_active Abandoned
- 2012-01-19 EP EP12751926.2A patent/EP2650913A4/en not_active Withdrawn
- 2012-01-19 WO PCT/JP2012/051025 patent/WO2012117758A1/ja active Application Filing
- 2012-02-14 TW TW101104771A patent/TW201241914A/zh unknown
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JPH05254998A (ja) | 1992-03-16 | 1993-10-05 | Matsushita Electric Ind Co Ltd | 酸化亜鉛ウィスカ製造装置のクリーニング方法 |
JP2001284330A (ja) * | 2000-03-31 | 2001-10-12 | Hitachi Ltd | 半導体装置の製造方法、及び製造装置 |
WO2006028118A1 (ja) * | 2004-09-08 | 2006-03-16 | Rohm Co., Ltd | 半導体発光素子 |
JP2010003872A (ja) | 2008-06-20 | 2010-01-07 | Kaneka Corp | 酸化亜鉛膜のドライエッチング方法 |
JP2010276483A (ja) * | 2009-05-28 | 2010-12-09 | Rohm Co Ltd | 紫外光検出素子及び紫外光検出装置 |
Non-Patent Citations (1)
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See also references of EP2650913A4 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2013140926A1 (ja) * | 2012-03-22 | 2013-09-26 | セントラル硝子株式会社 | 成膜装置内の金属膜のドライクリーニング方法 |
Also Published As
Publication number | Publication date |
---|---|
US20130333729A1 (en) | 2013-12-19 |
EP2650913A1 (en) | 2013-10-16 |
KR20130103625A (ko) | 2013-09-23 |
CN103430290A (zh) | 2013-12-04 |
TW201241914A (en) | 2012-10-16 |
EP2650913A4 (en) | 2014-07-30 |
JP2012186190A (ja) | 2012-09-27 |
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