WO2012105689A1 - 蛍光体、その製造方法及び発光装置 - Google Patents
蛍光体、その製造方法及び発光装置 Download PDFInfo
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- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/7729—Chalcogenides
- C09K11/7731—Chalcogenides with alkaline earth metals
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
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- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77348—Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7783—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals one of which being europium
- C09K11/77928—Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
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- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
Definitions
- the present invention relates to a phosphor that has a matrix crystal of complex oxynitride and is excited in the wavelength region of ultraviolet light to blue light, a method for producing the same, and a light emitting device using the phosphor.
- An object of the present invention is to provide a phosphor having a higher emission intensity than conventional phosphors, a method for producing the same, and a high-luminance light-emitting device using the phosphor.
- the present invention relates to compounds of the general formula: Me a Re b Si c Al d N e O f (although, Me is a Sr as an essential element, selected Na, Li, Mg, Ca, Ba, Sc, Y and La And Re may include Eu as an essential element and may include one or more elements selected from Mn, Ce, Tb, Yb, and Sm).
- composition ratios c, d, e and f are 0.220 ⁇ d / c ⁇ 0.280, 0.070 ⁇ f / e ⁇ 0.200 Is preferred.
- Me preferably consists only of Sr.
- Re is preferably composed only of Eu.
- P is preferably 1.636.
- the aforementioned phosphor is preferably excited by light having a wavelength of 300 nm or more and 500 nm or less and having an emission peak wavelength at a wavelength of 495 nm or more and 530 nm or less.
- the phosphor described above is described by a crystal structure model represented by (Me 1-x Re x M 2 X) m (M 2 X 4 ) n .
- m and n are integer values satisfying 1.630 ⁇ n / m ⁇ 1.650
- Me has Sr as an essential element, Na, Li, Mg, Ca, Ba, Sc, Y, and One or more elements selected from La may be included, and Re may include Eu as an essential element, and may include one or more elements selected from Mn, Ce, Tb, Yb, and Sm.
- X is one or more elements selected from oxygen and nitrogen.
- Another aspect of the present invention is a method for manufacturing a phosphor for manufacturing the above-described phosphor, which includes a mixing step of mixing raw materials, and a baking step of baking the mixture after the mixing step, ,
- Me nitride, carbide, hydride, silicide, carbonate or oxide however, Me has Sr as an essential element, and Na, Li, Mg, Ca, Ba, Sc, Y and La
- Re nitrides, hydrides, carbides, halides or oxides provided that Re includes Eu as an essential element and includes at least one element selected from Mn, Ce, Tb, Yb and Sm
- One or more types of (3) one or more of Si nitride, Si oxide, Si oxynitride or Si metal and (4) Provided is a method for producing a phosphor that is one or more of Al nitride, Al oxide, Al oxynitride, or Al metal.
- the firing step in this phosphor manufacturing method is preferably a firing step of firing at 1600 ° C. or more and 2000 ° C. or less under an atmospheric pressure of 0.1 MPa or more.
- this phosphor manufacturing method it is preferable to provide an annealing process in which the phosphor after the firing process is annealed at 1200 ° C. or higher and 1900 ° C. or lower.
- the raw material in the mixing step preferably contains the phosphor obtained in the firing step.
- the present invention from another viewpoint is a light emitting device including a light emitting element and the above-described phosphor.
- the light-emitting device may use one or more phosphors having an emission peak wavelength longer than that of the above-described phosphors in addition to the above-described phosphors.
- the light emitting element is preferably either an inorganic light emitting element or an organic light emitting element having a light emission of 340 nm to 500 nm.
- the light emitting element is preferably an LED element.
- the light-emitting device is preferably a liquid crystal TV backlight, a projector light source device, a lighting device or a signal device.
- the phosphor according to the present invention has higher luminance than the conventional phosphor. According to the phosphor manufacturing method of the present invention, it is possible to manufacture a phosphor having higher brightness than conventional phosphors.
- the light emitting device according to the present invention is a light emitting device having higher luminance.
- the present invention relates to compounds of the general formula: Me a Re b Si c Al d N e O f (although, Me is a Sr as an essential element, selected Na, Li, Mg, Ca, Ba, Sc, Y and La And Re may include Eu as an essential element and may include one or more elements selected from Mn, Ce, Tb, Yb, and Sm).
- composition ratios a, b, c, d, e, and f represent element ratios, and the same composition formula is obtained by multiplying a, b, c, d, e, and f by any positive numerical value. give.
- p 1.636.
- composition ratios c, d, e and f are 0.220 ⁇ d / c ⁇ 0.280, 0.070 ⁇ f / e ⁇ 0.200 Is preferred.
- x is an atomic ratio of Re luminescent ions. If the ratio of luminescent ions is small, sufficient emission intensity cannot be obtained. On the other hand, if the ratio of luminescent ions is large, a phenomenon called concentration quenching, which is a reabsorption effect of excitation energy between adjacent luminescent ions, occurs. The emission intensity cannot be obtained.
- x is 0.005 ⁇ x ⁇ 0.30, more preferably 0.01 ⁇ x ⁇ 0.25.
- y represents the ratio of Si element to Al element in the crystal structure
- z represents the ratio of N element to O element in the crystal.
- the parameters y and p, and z and p are used to determine the composition ratios c, d, e, and f of the general formula, and d / c and f / e are derived. Since y and z have a relationship of 1 degree of freedom in order to keep the charge in the crystal neutral, if the parameters p and y or p and z are given, all composition ratios c, d, e and f Can be designed.
- d / c and f / e are preferably 0.220 ⁇ d / c ⁇ 0.280, 0.070 ⁇ f / e ⁇ 0.200, 0.225 ⁇ d / c ⁇ 0.275, More preferably, 0.075 ⁇ f / e ⁇ 0.190.
- d / c and f / e are below the lower limit, formation of a second phase other than the target composition is promoted, resulting in a decrease in color purity and a decrease in emission intensity.
- Me preferably consists only of Sr.
- Re is preferably composed only of Eu.
- P is preferably 1.636.
- the phosphor described above preferably emits fluorescence having an emission peak wavelength of 495 nm or more and 530 nm or less by excitation light having a wavelength of 300 nm or more and 500 nm or less.
- the phosphor described above is described by a crystal structure model represented by (Me 1-x Re x M 2 X) m (M 2 X 4 ) n .
- m and n are integer values satisfying 1.630 ⁇ n / m ⁇ 1.650
- Me has Sr as an essential element, Na, Li, Mg, Ca, Ba, Sc, Y, and One or more elements selected from La may be included, and Re may include Eu as an essential element, and may include one or more elements selected from Mn, Ce, Tb, Yb, and Sm.
- X is one or more elements selected from oxygen and nitrogen.
- P n / m.
- the aforementioned phosphor is described by a crystal structure model containing m (Me 1-x Re x M 2 X) structures and n (M 2 X 4 ) structures in a crystal unit cell.
- m and n are numerical values that determine the total amount of unit cells because the number of structures included in the unit cell in the crystal model is determined.
- m and n are finite integer values and combinations thereof.
- a range of at least 1.630 ⁇ n / m ⁇ 1.650 is preferable.
- the method for producing a phosphor according to the present invention includes a mixing step of mixing raw materials, and a baking step of baking the mixture after the mixing step,
- the raw material is (1) Me nitride, carbide, hydride, silicide, carbonate or oxide (however, Me has Sr as an essential element, and Na, Li, Mg, Ca, Ba, Sc, Y and La) One or more of selected elements may be included.)
- Re nitrides, hydrides, carbides, halides or oxides (provided that Re includes Eu as an essential element and includes at least one element selected from Mn, Ce, Tb, Yb and Sm)
- the flux include alkali metal halides, alkaline earth metal halides, and Al halides, which are preferably added at 0.01 to 20 wt% with respect to 100 wt% of the phosphor raw material.
- Me uses Sr as an essential element, and one or more elements selected from Na, Li, Mg, Ca, Ba, Sc, Y, and La can be used. Me may contain one or more elements selected from Mg, Ca and Ba in addition to Sr, but it is preferable that it is composed of only Sr.
- Re can use one or more elements selected from Mn, Ce, Tb, Yb, and Sm, with Eu as an essential element, but it is preferable that it is composed only of Eu.
- the firing step in this phosphor manufacturing method is preferably a firing step of firing at 1600 ° C. or more and 2000 ° C. or less under an atmospheric pressure of 0.1 MPa or more.
- this phosphor manufacturing method it is preferable to provide an annealing process in which the phosphor after the firing process is annealed at 1200 ° C. or higher and 1900 ° C. or lower.
- the raw material in the mixing step contains the phosphor obtained in the above baking step.
- Another aspect of the present invention is a light emitting device including a light emitting element and the phosphor described above.
- the light-emitting device may use one or more phosphors having an emission peak wavelength longer than that of the above-described phosphors in addition to the above-described phosphors.
- the light emitting element is preferably either an inorganic light emitting element or an organic light emitting element having a light emission of 340 nm to 500 nm.
- the light emitting element is preferably an LED element.
- the light-emitting device is preferably a liquid crystal TV backlight, a projector light source device, a lighting device or a signal device.
- the phosphor according to the embodiment of the present invention is described by a crystal structure model represented by (Me 1-x Re x M 2 X) m (M 2 X 4 ) n .
- Me may include Sr as an essential element, and may include one or more elements selected from Na, Li, Mg, Ca, Ba, Sc, Y, and La, and Re may include Mn, Ce, and Eu as an essential element.
- One or more elements selected from Tb, Yb and Sm may be included.
- M is one or more elements selected from Si, Ge, Al and Ga
- X is one or more elements selected from oxygen and nitrogen.
- the phosphor according to the embodiment of the present invention has an emission peak wavelength in the range of 495 nm or more and 530 nm or less by excitation light having a wavelength of 300 nm or more and 500 nm or less as compared with conventional phosphors, particularly when the emission is derived from Eu ions. It emits blue-green to green fluorescence with high emission intensity.
- the phosphors of Examples 1 and 2 will be described.
- the raw material powders are silicon nitride powder (Si 3 N 4 ), aluminum nitride powder (AlN), aluminum oxide (Al 2 O 3 ), strontium oxide powder (SrO), strontium nitride powder (Sr 3 N 2 ), and europium oxide powder. (Eu 2 O 3 ) was used.
- Si 3 N 4 silicon nitride powder
- AlN aluminum nitride powder
- Al 2 O 3 aluminum oxide
- strontium oxide powder SrO
- strontium nitride powder Sr 3 N 2
- europium oxide powder Eu 2 O 3
- Comparative Example 1 shown in Table 1 has a composition in which p exceeds the upper limit, and the others are within the conditions of the present invention.
- p 1.636 as in Examples 1 and 2
- d / c or f / e falls below the lower limit.
- p 1.636, but d / c or f / e exceeds the upper limit value.
- the mixed powder obtained by dry mixing was filled in a crucible made of boron nitride (BN).
- the boron nitride crucible filled with the mixed powder was set in an electric furnace using a graphite heater heating method using a carbon fiber molded body as a heat insulating material. Firing is first performed by evacuating the heating furnace of the electric furnace with a diffusion pump, raising the temperature from room temperature to 1000 ° C. at a rate of 20 ° C. per minute, and when the temperature reaches 1000 ° C., heating furnace with 1.0 MPa nitrogen gas And heated to 1900 ° C. at 10 ° C. per hour and held at 1900 ° C. for 2 hours.
- the fired product thus obtained was pulverized using an agate mortar and pestle to obtain desired phosphor powders (Examples 1 and 2, Comparative Examples 1 to 6).
- FIG. 1 shows measurement results of emission and excitation spectra of Examples 1 and 2
- FIG. 2 shows Comparative Examples 1 to 5
- FIG. 3 shows Comparative Example 6.
- the emission spectrum is a measurement result at an excitation wavelength of 450 nm.
- the emission peak wavelength and emission intensity obtained from the emission spectrum are shown in Table 3 together with the above baking conditions. Since the value of the luminescence peak intensity varies depending on the error between the measuring apparatuses, the fluctuation existing in the light source of the measuring apparatus, the measurement conditions, etc., it is shown in Table 3 as a relative value (%) with respect to the reference phosphor.
- Example 1 and 2 of the present invention have an emission peak wavelength in the range of 495 nm to 530 nm, have a single emission shape, and have high emission intensity.
- Comparative Example 1 where the value of p is larger than the upper limit value of the range specified in the present invention, as shown in FIG.
- the emission wavelength is much lower than that of Examples 1 and 2.
- Table 4 shows composition ratios a, b, d / c and f / e obtained from the design composition and chemical analysis for Examples 1 and 2. Both are within the scope of the present invention. However, f / e is a numerical value higher than the design composition. f represents an ideal oxygen ratio in the phosphor. In the analysis, the phosphor is obtained through oxygen contained in the crystal lattice of the phosphor, oxygen contained in the atmosphere during firing, moisture in the air, and the like. Since the oxygen adsorbed on the surface of the particles is obtained without distinction, the value may be higher than the design value.
- FIG. 4 shows the measurement result of the powder X-ray diffraction pattern of the phosphor of Example 1.
- 5, 6 and 7 are the powder X-ray diffraction patterns of Comparative Examples 1, 3 and 6, respectively.
- Example 1 was a pattern characteristic of the phosphor of the present invention, while Comparative Examples 1, 3 and 6 were different patterns from the phosphor of the present invention.
- Rietveld analysis was performed according to the method of Non-Patent Document 1, using a crystal structure consisting of (Me 1-x Re x M 2 X) 11 (M 2 X 4 ) 18 as an initial model.
- the results of the temperature dependence of the emission intensity of Examples 1 and 2 are shown in FIG. 8 with the emission intensity at a temperature of 30 ° C. being 1.0.
- the excitation wavelength was 450 nm.
- the emission intensity was 0.75 (75%) or more, and the phosphor was small in extinction accompanying the temperature rise.
- the phosphor according to the present invention has a small decrease in light emission intensity even at a high temperature, and is very suitable for a light emitting device combined with a light emitting element.
Abstract
Description
組成比a、b、c、d、e及びfを、
a=1-x、
b=x、
c=(2+2p)×(1-y)、
d=(2+2p)×y、
e=(1+4p)×(1-z)、
f=(1+4p)×z、
とするとき、
パラメータp、x、y及びzが、
1.630<p<1.650、
0.005<x<0.300、
0.180<y<0.220、
0.060<z<0.100
である蛍光体を提供する。
0.220<d/c<0.280、
0.070<f/e<0.200
であるのが好ましい。
(1)Meの窒化物、炭化物、水素化物、珪化物、炭酸塩又は酸化物(ただし、Meは、Srを必須の元素とし、Na、Li、Mg、Ca、Ba、Sc、Y及びLaから選ばれる元素の一種以上を含んでもよい。)の一種又は複数種と、
(2)Reの窒化物、水素化物、炭化物、ハロゲン化物又は酸化物(ただし、Reは、Euを必須の元素とし、Mn、Ce、Tb、Yb及びSmから選ばれる元素の一種以上を含んでもよい。)の一種又は複数種と、
(3)Si窒化物、Si酸化物、Si酸窒化物又はSi金属の一種又は複数種、及び、
(4)Al窒化物、Al酸化物、Al酸窒化物又はAl金属の一種又は複数種である蛍光体の製造方法を提供する。
組成比a、b、c、d、e及びfを、
a=1-x、
b=x、
c=(2+2p)×(1-y)、
d=(2+2p)×y、
e=(1+4p)×(1-z)、
f=(1+4p)×z
とするとき、
パラメータp、x、y及びzが、
1.630<p<1.650、
0.005<x<0.300、
0.180<y<0.220、
0.060<z<0.100
である蛍光体である。
ここで、組成比a、b、c、d、e及びfは元素の比を表しており、a、b、c、d、e及びfに正の任意の数値を掛けたものも同じ組成式を与える。本発明では、a+b=1となるように規格化しているので、ある組成式を有する材料が本発明の範囲となるかどうかは、a+b=1となるように規格化したa、b、c、d、e及びfの組成比を用いて判断される。
0.220<d/c<0.280、
0.070<f/e<0.200
であるのが好ましい。
電荷中性を保つための組成設計として、yとzには、z={2y(p+1)+4p-7/(4p+1)}の関係がある。
m及びnは結晶モデルにおけるユニットセルに内包するそれぞれの構造数を決定しているため、ユニットセルの総量を決定させる数値であるが、この結晶モデルにおいてmとnは有限の整数値ならびにその組み合わせを満たすことが必要であり、所望の蛍光体を得るためには少なくとも1.630<n/m<1.650の範囲であることが好ましい。
本発明による蛍光体の製造方法では、原料を混合する混合工程と、混合工程後の混合物を焼成する焼成工程とを有し、
原料が、
(1)Meの窒化物、炭化物、水素化物、珪化物、炭酸塩又は酸化物(ただし、Meは、Srを必須の元素とし、Na、Li、Mg、Ca、Ba、Sc、Y及びLaから選ばれる元素の一種以上を含んでもよい。)の一種又は複数種と、
(2)Reの窒化物、水素化物、炭化物、ハロゲン化物又は酸化物(ただし、Reは、Euを必須の元素とし、Mn、Ce、Tb、Yb及びSmから選ばれる元素の一種以上を含んでもよい。)の一種又は複数種と、
(3)Si窒化物、Si酸化物、Si酸窒化物又はSi金属の一種又は複数種、及び、
(4)Al窒化物、Al酸化物、Al酸窒化物又はAl金属の一種又は複数種と、で構成される。
原料粉末は、窒化珪素粉末(Si3N4)、窒化アルミニウム粉末(AlN)、酸化アルミニウム(Al2O3)、酸化ストロンチウム粉末(SrO)、窒化ストロンチウム粉末(Sr3N2)及び酸化ユーロピウム粉末(Eu2O3)を用いた。
一般式MeaRebSicAldNeOfにおいて、表1に示すp、x、y、z、a、b、d/c及びf/eは、表1に示す設計組成とした。
焼成は、まず拡散ポンプにより電気炉の加熱筺体内を真空として、室温から1000℃まで毎分20℃の速度で昇温し、1000℃になった時点で1.0MPaの窒素ガスにて加熱筺体を充填し、毎時10℃で1900℃まで加熱し、1900℃で2時間保持して行った。
得られた前記焼成物は、設計組成比によって、発光ピーク波長及び発光強度が変化した。本発明の実施例1及び2は、発光ピーク波長が495nm以上530nmの範囲にあり、単一的な発光形状を持っており、且つ、発光強度が高い。一方、pの値が本発明で特定した範囲の上限値より大きい比較例1においては、図2に示すように、明らかな第二相以上の発光は見られないが、発光形状が短波長側と長波長側に裾を引いており、発光強度も実施例1及び2に比べて格段に低い。d/c又はf/eの値が本発明で特定した範囲の下限値より低い比較例2乃至5では、波長550nm以上700nm以下の範囲に第二相からなる発光が観測されており、発光強度が低い。
比較例6は、設計組成においてd/c又はf/eが上限値より大きいものであり、明確な第二相の発光は存在していないものの、発光ピーク波長が486nmと短波長側へシフトしており、発光形状も短波長側と長波長側に裾を引いていた。発光強度も実施例1及び2と比べると低かった。
X線回折の測定結果について(Me1-xRexM2X)11(M2X4)18からなる結晶構造を初期モデルとして、非特許文献1の方法に従ってリートベルト解析を行ったところ、収束したことから、本結晶はp=1.636(m=11、n=18,p=n/m)の(Me1-xRexM2X)m(M2X4)nで示される結晶構造モデルで記述されることが確認された。
電力-光変換の原理を用いた発光素子において、発光に寄与しなかった電力エネルギーはその大部分は熱に変換されることから、点灯駆動中の発光素子は実際に相当高い温度になっていた。したがって、本発明に係る蛍光体は、高温下でも発光強度の低下が小さいものであり、発光素子と組み合わせた発光装置に非常に適するものである。
Claims (15)
- 一般式:MeaRebSicAldNeOf(ただし、Meは、Srを必須の元素とし、Na、Li、Mg、Ca、Ba、Sc、Y及びLaから選ばれる元素の一種以上を含んでもよく、Reは、Euを必須の元素とし、Mn、Ce、Tb、Yb及びSmから選ばれる元素の一種以上を含んでもよい。)で示される蛍光体であって、
組成比a、b、c、d、e及びfを、
a=1-x、
b=x、
c=(2+2p)×(1-y)、
d=(2+2p)×y、
e=(1+4p)×(1-z)、
f=(1+4p)×z、
とするとき、
パラメータp、x、y及びzが、
1.630<p<1.650、
0.005<x<0.300、
0.180<y<0.220、
0.060<z<0.100、
である蛍光体。 - 組成比c、d、e及びfが、
0.220<d/c<0.280、
0.070<f/e<0.200
である請求項1記載の蛍光体。 - Meが、Srのみからなる請求項1に記載の蛍光体。
- Reが、Euのみからなる請求項1に記載の蛍光体。
- p=1.636である請求項1に記載の蛍光体。
- 波長300nm以上500nm以下の光によって励起され、波長495nm以上530nm以下に発光ピーク波長を有する請求項1に記載の蛍光体。
- (Me1-xRexM2X)m(M2X4)nで示される結晶構造モデルで記述される(ただし、mとnは、1.630<n/m<1.650を満たす整数値であり、Meは、Srを必須の元素とし、Na、Li、Mg、Ca、Ba、Sc、Y及びLaから選ばれる元素の一種以上を含んでもよく、Reは、Euを必須の元素とし、Mn、Ce、Tb、Yb及びSmから選ばれる元素の一種以上を含んでもよく、Mは、Si、Ge、Al及びGaから選ばれる一種以上の元素であり、Xは、酸素と窒素から選ばれる一種以上の元素である。)請求項1記載の蛍光体。
- 請求項1記載の蛍光体を製造する蛍光体の製造方法であって、原料を混合する混合工程と、混合工程後の混合物を焼成する焼成工程とを有し、
原料が、
(1)Meで示される元素の窒化物、炭化物、水素化物、珪化物、炭酸塩又は酸化物(ただし、Meは、Srを必須の元素とし、Na、Li、Mg、Ca、Ba、Sc、Y及びLaから選ばれる元素の一種以上を含んでもよい。)の一種又は複数種と、
(2)Reで示される元素の窒化物、水素化物、炭化物、ハロゲン化物又は酸化物(ただし、Reは、Euを必須の元素とし、Mn、Ce、Tb、Yb及びSmから選ばれる元素の一種以上を含んでもよい。)の一種又は複数種と、
(3)Si窒化物、Si酸化物、Si酸窒化物又はSi金属の一種又は複数種、及び、
(4)Al窒化物、Al酸化物、Al酸窒化物又はAl金属の一種又は複数種である蛍光体の製造方法。 - 焼成工程が、0.1MPa以上の雰囲気圧力下において1600℃以上2000℃以下で焼成する焼成工程である請求項8記載の蛍光体の製造方法。
- 焼成工程後の蛍光体を1200℃以上1900℃以下でアニール処理するアニール工程を有する請求項8記載の蛍光体の製造方法。
- 混合工程での原料に、前記焼成工程で得られた蛍光体を含ませた請求項8記載の蛍光体の製造方法。
- 発光素子と、請求項8記載の蛍光体とを備える発光装置。
- 請求項1乃至7のいずれか一項に記載の蛍光体より長波長の発光ピーク波長を有する一種以上の蛍光体をさらに備える請求項12記載の発光装置。
- 前記発光素子が、340nm以上500nm以下の発光を有する無機発光素子又は有機発光素子のいずれかである請求項12記載の発光装置。
- 発光装置が、液晶TV用バックライト、プロジェクタの光源装置、照明装置又は信号装置である請求項12記載の発光装置。
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CN201280007867.9A CN103380193B (zh) | 2011-02-06 | 2012-02-03 | 荧光体、其制备方法以及发光装置 |
US13/983,762 US9512358B2 (en) | 2011-02-06 | 2012-02-03 | Phosphor, production method for the same, and light-emitting device |
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EP2671937A1 (en) | 2013-12-11 |
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