WO2012100770A1 - Dispositif de mesure électrique pour mesure de force et/ou de pression - Google Patents

Dispositif de mesure électrique pour mesure de force et/ou de pression Download PDF

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Publication number
WO2012100770A1
WO2012100770A1 PCT/DE2012/000064 DE2012000064W WO2012100770A1 WO 2012100770 A1 WO2012100770 A1 WO 2012100770A1 DE 2012000064 W DE2012000064 W DE 2012000064W WO 2012100770 A1 WO2012100770 A1 WO 2012100770A1
Authority
WO
WIPO (PCT)
Prior art keywords
measuring
measuring device
pressure
carrier
electrical
Prior art date
Application number
PCT/DE2012/000064
Other languages
German (de)
English (en)
Inventor
Anton Stier
Pablo AGUIRRE
Herbert HOLZEU
Original Assignee
Kaufbeurer Mikrosysteme Wiedemann Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kaufbeurer Mikrosysteme Wiedemann Gmbh filed Critical Kaufbeurer Mikrosysteme Wiedemann Gmbh
Publication of WO2012100770A1 publication Critical patent/WO2012100770A1/fr

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0098—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means using semiconductor body comprising at least one PN junction as detecting element

Definitions

  • the invention relates to an electrical measuring device according to the preamble of claim! ,
  • DMS strain gauges
  • the substrate consists of an elastically deformable material, preferably of a polymeric material, the hardness of which is smaller than the hardness of that used for the measuring structure
  • the invention has for its object to overcome this drawback and a
  • the peculiarity of the measuring device according to the invention is that it is designed so that the respective force to be measured and / or each of the pressure to be measured and / or derived therefrom forces or pressures perpendicular or
  • piezo-resistive materials are in the context of the invention, such materials or materials with which on support surfaces electrical resistance or
  • Measuring structures can be produced, the electrical resistance changes depending on a force and / or pressure on the measuring structure perpendicular or substantially perpendicular to the support surface.
  • FIG. 1 in a very simplified schematic sectional view of a
  • Fig. 2 in a simplified representation and in section the sensor element of
  • Fig. 3 in a simplified representation of a plan view of the sensor element of the figure
  • FIG. 4 in a simplified schematic sectional view of a
  • FIG. 5 is an enlarged partial detail of the pressure measuring device of Figure 4; Fig. 6 in a very simplified schematic sectional view another
  • FIG. 7 in a simplified schematic sectional view of a
  • FIG. 8 is an enlarged partial view of the pressure measuring device of Figure 7.
  • the figures indicate the axes of a Cartesian coordinate system which are oriented perpendicular to one another, namely the X-axis, Y-axis and Z-axis.
  • the force measuring device generally designated 1 in FIG. 1 is used to measure the force F acting between a first functional element 2 (force transducer) and a second functional element 3 (base) of the force measuring device 1 in the Z axis and to generate at least one of the same size Force F dependent, eg to the magnitude of the force F proportional electrical signal.
  • the functional element 2 is in the illustrated embodiment, for example, a solid stamp-like element with a flat lying in the XY plane stamp surface 2.1.
  • the functional element 3 is in the
  • Carrier element e.g. of a metallic material, for example of steel (for example of corrosion-resistant steel or stainless steel) and has in the
  • the illustrated embodiment on its upper side also a flat or plane arranged in an XY plane surface 3.1. Furthermore, in the illustrated embodiment, the area 3.1 is larger than the area 2.1, so that the
  • Functional element 3 with its surface 3.1 laterally over the functional element 2 and the surface 2.1 is away.
  • the surface 2.1 could also be convex in at least one subregion.
  • a sensor element 4 is arranged, which essentially consists in the illustrated embodiment of a plate-shaped substrate 5 with a measuring structure 6 on a substrate surface side.
  • the substrate surface side and measuring structure 6 or the layer forming this measuring structure are arranged in an XY plane.
  • the measuring structure is preferably designed as a meander-like conductor track. Others too Shapes for the measuring structure 6 are possible.
  • the substrate 5 is designed in one or more layers in such a way that the measuring structure 6 is electrically separated from the functional element 3.
  • the functional element 2 is also e.g. of a metallic material, for example of steel (for example of corrosion-resistant steel or stainless steel) or else the functional element is made entirely of an electrically insulating material.
  • the measuring structure 6 is provided at two mutually remote areas each with an electrical connection 8, via which the sensor element 4 and the force measuring device 1 can be connected or connected to a measuring and evaluation electronics 9, u.a. for generating a dependent on the size of the force F measurement signal.
  • the measuring and evaluation electronics 9 is preferably at least partially part of the force-measuring device 1.
  • the force F acts exclusively on the measuring structure 6 in the direction of the Z-axis or substantially in the direction of the Z-axis, i. in an axial direction perpendicular or substantially perpendicular to the surface of the substrate 5 having the measuring structure 6 and thus perpendicular to the XY-plane in which the measuring structure 6 extends.
  • the functional element 2 or the force F exerted on this functional element 2 acts e.g. as evenly as possible on the effective and between the two terminals 8 formed region of the measuring structure 6 limited in the Figure 3 with the broken line 6.1.
  • the materials used for the substrate 5, the measuring structure 6 and the insulating layer 7 are selected such that the material hardness and / or the modulus of elasticity of the substrate 5 as well as of the insulating layer 7 are each greater than the material hardness of the material used for the measuring structure 6 , Furthermore, at least the material for the substrate 5 is selected so that during the measurement no or in the Substantially no deformation of the substrate 5 takes place.
  • Different materials such as ceramics based on alumina, aluminum nitride, carbide, etc.
  • Other materials including composites with appropriate hardness and with electrically insulating properties are suitable for the substrate 5 and / or the insulating layer 7.
  • the measuring structure 6 consists of an electrically conductive and / or piezo-resistive material, which is not permanently deformed, at least in the measuring range for which the force-measuring device 1 is designed, but is elastic.
  • Piezoresistive material for the measuring structure 6 are suitable i.a. metallic
  • Materials e.g. Ni, Cr, Ti, Pt, Cu and / or W and / or their alloys in Belly mixing ratio and / or their oxides and / or nitrides, also materials that are commonly used for the measurement structure of strain gauges, such as copper-nickel Alloys, for example, constantan (eg 54% Cu 45% Ni 1% Mn), nickel-chromium alloys,
  • N icromeV e.g., 80% Ni 20% Cr
  • platinum-tungsten alloys e.g., 92% Pt 8% W
  • platinum about 100% Pt
  • titanium compounds e.g. made of titanium hydride.
  • a piezoresistive material for the measuring structure 6 are also suitable.
  • the application of the measuring structure 6 on the substrate 5 is preferably carried out with the thin-film technology, e.g. by chemical (CVD) and / or physical (PVD) deposition methods and / or sputtering, wherein when using semiconductor material, for example of Si this silicon, either in the form of a thin monocrystalline layer or as a polycrystalline layer, e.g. is applied as a vapor-deposited polycrystalline layer.
  • the layer thickness which has the measuring structure 6 in the Z-axis direction, corresponds to the
  • the thin-film technology layer thicknesses for example, is klei ner than 40 // m, and is preferably in the range between 10 ⁇ and 20 ⁇
  • the respectively desired shape of the measuring structure 6 by structuring a first surface or substantially flat applied Layer produced, for example using the masking and etching technique known in the art, or the application of the measuring structure is carried out using masks.
  • Other methods for producing the measuring structure 6 are also possible, for example applying the measuring structure 6 or a layer forming this measuring structure by laminating or bonding a film forming the measuring structure from the piezoresistive materal to the substrate 5.
  • the measuring structure 6 using the thick film technology, ie by printing the measuring structure 6 on the substrate 5, for example by screen printing using a piezo resistive material containing paste and then baking the applied paste, with a layer thickness of the measuring structure 6, for example in the range between 10 // m and 100 / m.
  • Measuring structure 6 much greater material hardness of the substrate 5 and the
  • Insulating layer 7 also comes to no stretching of the measuring structure 6, results between the two terminals 8 dependent on the force F
  • Resistance change of the measuring structure 6 is achieved in the force measuring device 1 without a noticeable movement of the functional element 2 relative to the functional element 3.
  • the force measuring device 1 is designed for example as a force sensor, which can be used wherever forces F, especially large forces F measured or these forces corresponding measurement signals for a variety of purposes, such as monitoring, control, etc. are required.
  • the functional element 3 is provided with means for attaching the sensor, ie for fastening, for example, to machine parts or elements, etc.
  • the sensor element 4 is accommodated in the interior of a hood or cup-like housing part 10, in the open side of which the functional element 3 has its sensor element 4 Side is introduced and which is connected at this open side tightly connected to the functional element 3, for example by welding.
  • the hood-like housing part 10 is made of a suitable material, for example of a metallic material, such as stainless steel or aluminum, at least at its bottom 10.1 elastically deformable, on the inside lying the stamp-like
  • Functional element 2 is attached or formed. In the illustrated embodiment
  • the functional element 2 is completely inside the functional element 2
  • Housing part 10 added, but it can also protrude through the bottom 10.1 to the outside.
  • Figures 4 and 5 show a schematic representation of a pressure sensor formed as a pressure measuring device 1 1 for measuring the pressure of a liquid and / or gaseous and / or vaporous medium.
  • Pressure measuring device 1 1 includes i.a. a hood-like housing part 12, which is made of a suitable material, for example of a metallic material, e.g. Made of stainless steel or aluminum, and with such a strength that the housing part 12 at least within the measuring range of
  • Pressure measuring device 1 1 is dimensionally stable, i. is not deformed.
  • the hood-like housing part 12 is closed at its open side with a closure 1, which has a connection for supplying the medium under pressure, so that in the interior of the housing part 12, a pressure measuring chamber 14 is formed.
  • the sensor element 4 On a plane and arranged in an XY plane counter or inner surface 7.1 in the region of the bottom 12.1 of the housing part 12, the sensor element 4 is provided, in such a way that it with its measuring structure 6 against the at least in the region of the sensor element 4 is electrically non-conductive executed, ie
  • formed by the insulating layer 7 plane counter or inner surface 7.1 is applied, only with the active area 6.1 of the measuring structure 6, while the measuring structure 6 laterally of the active area 6.1 of the counter or inner surface 7.1 and also spaced from the inner surface of the bottom 12.1 is.
  • the terminals 8 are led to the outside. Especially in the area of these holes 15, the measuring structure 6 is spaced from the counter or inner surface 7.1 and inner surface of the bottom 12.1. At the edge of the substrate 5, the gap between the substrate 5 and the inner surface of the bottom portion 12.1 by an annular seal 16 of a permanently elastic material tightly closed. The holes 1 5 are also used to vent the measuring structure 6 receiving and sealed by the seal 16 against the measuring space 14 space between the substrate 5 and the abutment or counter surface 7.1.
  • the pressure P prevailing in the pressure measuring chamber 14 acts via the substrate 5 on the measuring structure 6 supported on the insulating layer 7 or on the counter or inner surface 7.1, again in the direction of the Z axis, ie in an axial direction perpendicular to those in XY Levels arranged surface sides of the substrate 5 and in an axial direction perpendicular to the XY plane of the measuring structure 6.
  • the terminals 8 are connected to the evaluation and measuring electronics 9, which is at least partially part of the pressure measuring device 1 1 and in an additional housing, not shown the pressure measuring device 1 1 is housed, on which then external connections of the pressure measuring device 1 1 are provided.
  • a force measuring device 1 a which differs from the force measuring device 1 essentially only in that the sensor element 4 a is designed as a redundant sensor element and for this purpose two measuring structures 6, preferably two identical measuring structures 6, each on its own substrate 5 having.
  • the substrates 5 are stacked with their measuring structures 6, in the direction of the Z-axis, ie in the direction of action of the force F following each other, so that the force F in turn perpendicular or substantially perpendicular to the plane of the respective measuring structures 6 and Level of the surface sides of the substrates 5 acts on both measuring structures.
  • the measuring structures 6 are connected in each case via connections 8 and 8a to the evaluation and measuring electronics 9, specifically for the evaluation and / or processing of the measuring signals supplied by the measuring structures.
  • Evaluation can be carried out in many different ways, for example in such a way that the output signal of the evaluation and measuring electronics 9 is generated by averaging or averaging of the signals supplied by the measuring structures 6.
  • Pressure measuring device 1 1a which differs from the pressure measuring device 1 1 of Figures 4 and 5 essentially only in that the measuring structure 6 is arranged on its support surface, which in turn is formed in the illustrated embodiment of de substrate 5, that the measuring structure 6 is applied directly to the present in the pressure measuring chamber 14 pressure medium or with its pressure.
  • the measuring structure 6 is located on the side of the element forming the carrier surface, namely, the pressure measuring chamber 14
  • Substrate 5 is provided. In special cases it may be necessary to
  • a sensor element 4a corresponding sensor element may also be used with at least two measuring structures 6, and preferably with two in the direction of the Z-axis against each other offset and by an insulating carrier or separating layer, for example by a substrate 5 from each other separated measuring structures 6.
  • a measuring structure is then arranged so that they directly or ggs. is applied via a protective layer with the pressure medium existing in the pressure chamber 14 or with the pressure thereof.
  • the respective sensor element 4 has only one single measuring structure 6. It is also possible to form the sensor element 4 with a plurality of measuring structures 6, for example also with a plurality of measuring structures 6 forming a resistance bridge, of which at least one measuring structure 6 with the force to be measured or with the pressure to be measured or with forces derived therefrom the above-described manner is applied. Furthermore, there is also the possibility of the
  • Measuring structure 6 is provided on a flat surface side. Although this represents a particularly production-friendly solution, but it is also possible embodiments in which the measuring structure is provided curved on a curved surface. All versions but is common that the force and / or Pressure on the at least one measuring structure 6 always only in one

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

Dispositif de mesure électrique pour mesure de force et/ou de pression, comprenant au moins une structure de mesure appliquée sur une surface de support et constituée au moins partiellement d'un matériau piézorésistif.
PCT/DE2012/000064 2011-01-28 2012-01-27 Dispositif de mesure électrique pour mesure de force et/ou de pression WO2012100770A1 (fr)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
DE102011009784.8 2011-01-28
DE102011009784 2011-01-28
DE102011103678.8 2011-06-09
DE102011103678 2011-06-09
DE201110105756 DE102011105756A1 (de) 2011-01-28 2011-06-24 Elektrische Messeinrichtung zur Kraft- und/oder Druckmessung
DE102011105756.4 2011-06-24

Publications (1)

Publication Number Publication Date
WO2012100770A1 true WO2012100770A1 (fr) 2012-08-02

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Application Number Title Priority Date Filing Date
PCT/DE2012/000064 WO2012100770A1 (fr) 2011-01-28 2012-01-27 Dispositif de mesure électrique pour mesure de force et/ou de pression

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DE (1) DE102011105756A1 (fr)
WO (1) WO2012100770A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102018218300A1 (de) * 2018-10-25 2020-04-30 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Sensorisches Schichtsystem

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015111425B4 (de) * 2014-07-18 2016-06-30 Klaus Kürschner Verfahren und Einrichtung zur elektrischen Kraftmessung mittels Isolationsdünnschicht
DE102015117044B3 (de) * 2015-10-07 2016-12-08 Sensor-Technik Wiedemann Gmbh Elektrische Messanordnung zur Kraft- und/oder Druckmessung sowie Abstützeinrichtung mit einer derartigen elektrischen Messanordnung
DE102018216061A1 (de) * 2018-09-20 2020-03-26 Zf Friedrichshafen Ag Fahrwerkbauteil, Verfahren zur Herstellung eines Fahrwerkbauteils sowie Radaufhängung

Citations (9)

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Publication number Priority date Publication date Assignee Title
DE1932899A1 (de) * 1969-06-28 1971-01-07 Rohrbach Dr Christof Messwertgeber zum Umwandeln von Kraeften,mechanischen Spannungen oder Druecken in elektrische Widerstandsaenderungen
DE3874653T2 (de) * 1987-07-31 1993-02-25 Toyoda Chuo Kenkyusho Kk Si-kristall-kraftwandler.
DE68905967T2 (de) * 1988-07-26 1993-11-11 Toyota Chuo Kenkyusho Aichi Kk Piezoresistiver Si Einkristall Druckwandler.
DE69308662T2 (de) * 1992-07-16 1997-10-16 Toyoda Chuo Kenkyusho Kk Kraftwandler und seine Verwendung in einer Druckerfassungsschaltung
US5877425A (en) * 1995-12-26 1999-03-02 Hitachi, Ltd. Semiconductor-type pressure sensor with sensing based upon pressure or force applied to a silicon plate
DE102005002523A1 (de) * 2005-01-19 2006-07-27 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung zur Messung der Kraft bei Bremsaktuatoren
WO2007010574A1 (fr) * 2005-07-22 2007-01-25 Stmicroelectronics S.R.L. Capteur à pression intégrée avec valeur élevée pleine échelle
DE102006019942A1 (de) * 2006-04-28 2007-10-31 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Kraftmessvorrichtung zur Messung der Kraft bei Festkörperaktoren, Verfahren zur Messung einer Kraft sowie Verwendung der Kraftmessvorrichtung
US20080178691A1 (en) * 2006-05-15 2008-07-31 Stmicroelectronics Asia Pacific Pte Ltd Piezo-resistive force sensor with bumps on membrane structure

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19716588A1 (de) * 1996-04-20 1997-11-13 Sensotronik Gmbh Kraftsensor

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1932899A1 (de) * 1969-06-28 1971-01-07 Rohrbach Dr Christof Messwertgeber zum Umwandeln von Kraeften,mechanischen Spannungen oder Druecken in elektrische Widerstandsaenderungen
DE3874653T2 (de) * 1987-07-31 1993-02-25 Toyoda Chuo Kenkyusho Kk Si-kristall-kraftwandler.
DE68905967T2 (de) * 1988-07-26 1993-11-11 Toyota Chuo Kenkyusho Aichi Kk Piezoresistiver Si Einkristall Druckwandler.
DE69308662T2 (de) * 1992-07-16 1997-10-16 Toyoda Chuo Kenkyusho Kk Kraftwandler und seine Verwendung in einer Druckerfassungsschaltung
US5877425A (en) * 1995-12-26 1999-03-02 Hitachi, Ltd. Semiconductor-type pressure sensor with sensing based upon pressure or force applied to a silicon plate
DE102005002523A1 (de) * 2005-01-19 2006-07-27 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung zur Messung der Kraft bei Bremsaktuatoren
WO2007010574A1 (fr) * 2005-07-22 2007-01-25 Stmicroelectronics S.R.L. Capteur à pression intégrée avec valeur élevée pleine échelle
DE102006019942A1 (de) * 2006-04-28 2007-10-31 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Kraftmessvorrichtung zur Messung der Kraft bei Festkörperaktoren, Verfahren zur Messung einer Kraft sowie Verwendung der Kraftmessvorrichtung
US20080178691A1 (en) * 2006-05-15 2008-07-31 Stmicroelectronics Asia Pacific Pte Ltd Piezo-resistive force sensor with bumps on membrane structure

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102018218300A1 (de) * 2018-10-25 2020-04-30 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Sensorisches Schichtsystem
DE102018218300B4 (de) 2018-10-25 2023-09-07 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Sensorisches Schichtsystem

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