WO2008034663A1 - système de détecteur doté d'un substrat et d'un boîtier et procédé de fabrication d'un système de détecteur - Google Patents

système de détecteur doté d'un substrat et d'un boîtier et procédé de fabrication d'un système de détecteur Download PDF

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Publication number
WO2008034663A1
WO2008034663A1 PCT/EP2007/057744 EP2007057744W WO2008034663A1 WO 2008034663 A1 WO2008034663 A1 WO 2008034663A1 EP 2007057744 W EP2007057744 W EP 2007057744W WO 2008034663 A1 WO2008034663 A1 WO 2008034663A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
housing
region
sensor arrangement
carrier
Prior art date
Application number
PCT/EP2007/057744
Other languages
German (de)
English (en)
Inventor
Stefan Mueller
Frieder Haag
Original Assignee
Robert Bosch Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch Gmbh filed Critical Robert Bosch Gmbh
Publication of WO2008034663A1 publication Critical patent/WO2008034663A1/fr

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/14—Housings
    • G01L19/148—Details about the circuit board integration, e.g. integrated with the diaphragm surface or encapsulation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/14—Housings
    • G01L19/141—Monolithic housings, e.g. molded or one-piece housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape

Definitions

  • the invention is based on a sensor arrangement with a substrate and with a housing according to the preamble of the main claim.
  • German Patent Application DE 199 29 026 A1 discloses a method for producing a pressure sensor in which a semiconductor pressure sensor is applied to a mounting section of a line grid, the semiconductor pressure sensor is electrically connected to contact sections of the line grid, and the line grid with the semiconductor pressure sensor is inserted into an injection molding tool and then the semiconductor pressure transducer is surrounded in the injection mold with a housing made of injection molding compound, wherein in the injection molding means are provided, through which a pressure feed for the Halbleitdruckaufêt disturbing of the casing and spray compound is recessed, wherein a punch in the injection mold through a gap to that of the Semiconductor pressure transducer remote side of the mounting portion is arranged spaced.
  • it is known sensors that need access to external media such.
  • the substrate has a first substrate region and a second
  • Substrate area wherein an active sensor area, such as a pressure sensor membrane or the like., Is located in the second substrate region and the second substrate region is provided protruding from the housing. In the transition region between the first and the second substrate region, the housing has an opening in the second substrate region. Characterized in that the second substrate region of the
  • the housing is designed so that the sensor or the substrate with the active sensor area is embedded only on one side, namely in the region of its first substrate region, in the molding compound or in the housing material.
  • the invention is based on a sensor arrangement with a substrate and with a
  • housing wherein the housing substantially completely surrounds the substrate in a first substrate region, wherein the housing is provided in a second substrate region at least partially open by means of an opening, wherein in the region of the opening, the second substrate region is provided protruding from the housing.
  • the gist of the invention is that the substrate in a third substrate region is at least partially supported by a support connected to the housing.
  • the substrate can not tilt so easily when mounting the sensor assembly.
  • the proportion of the first substrate region on the entire substrate can thus be reduced in comparison to the prior art.
  • the support of the substrate in the third substrate area assists in further support Mounting processes such as bonding the sensor array in the form of a semiconductor chip on a stamped grid, wire grid or carrier strip, as well as in the electrical contacting, for example by wire bonding.
  • Substrate area at least partially rests on the support.
  • tilting of the substrate is prevented by the support, but at the same time a mechanical load on the substrate is minimized by forces acting on the support.
  • the substrate in the third substrate region is at least partially firmly connected to the carrier.
  • the carrier is resilient. As a result, a mechanical load of the substrate is again kept as low as possible by forces acting on the carrier.
  • the carrier is part of a line grid. The carrier is at least indirectly, connected via the line grid to the housing.
  • Embodiment provides that the carrier is directly connected to the housing.
  • several carriers can be provided which secure the substrate at several points and in several directions against tilting.
  • FIG. 1 shows a schematic plan view of a first embodiment of a sensor arrangement in the not previously published prior art
  • Figure 2 is a schematic representation of a sectional view through the
  • Figure 3 is a schematic plan view of a second embodiment of a
  • FIG. 4 is a schematic sectional view of the second embodiment of the sensor arrangement based on the section line AA from FIG. 3, FIG.
  • FIG. 5 a schematic plan view of a first sensor arrangement according to the invention
  • FIG. 6 a schematic representation of a sectional view through the first sensor arrangement according to the invention, based on the section line AA from FIG. 5
  • FIG. 7 a schematic representation of the first sensor arrangement according to the invention in phantom
  • FIG Figure 8 is a schematic representation of a second sensor arrangement according to the invention in a transparent view.
  • This sensor arrangement 10 comprises a housing 30 and a substrate 20.
  • the substrate material is in particular as a semiconductor material or as a composite substrate, for example of
  • the substrate material is referred to as substrate 20.
  • the substrate 20 has a first region 21 and a second region 22, wherein in the second region 22, an active region 23 is shown separately, which serves for sensing or for detecting a size to be measured by means of the sensor arrangement 10.
  • an opening 33 is provided in the housing 30 in the transition region to the first substrate region 21, so that the second substrate region 22 can protrude.
  • the variable which can be detected by means of the active region 23 is, in particular, one which can be detected only by means of at least indirect contact between the second substrate region 22 or in particular the active region 23 and a medium not shown in the figures.
  • the medium may be, for example, a gas whose pressure is to be measured by means of a pressure measuring membrane as the active region 23.
  • the medium such as air or another gas, access to the area 23, d. H. in particular to the pressure measuring membrane. This access to the active region 23 is realized by the second substrate region
  • FIG. 1 shows a section line AA, with FIG. 2, with certain modifications, being a schematic illustration of the sensor arrangement 10 according to the invention according to the section line AA from FIG.
  • connecting elements 31 such as For example, pins or Mais michsbeinchen or the like., Stand out.
  • no contacting elements 31 protrude from the housing 30, but that on the top, the bottom and / or the lateral surfaces of the housing 30 contact surfaces (not shown) are present, the contacting of the device or the sensor assembly serve, for example by means of a flip-chip mounting option, BGA housing or the like.
  • the housing 30 is
  • FIG. 2 shows a schematic representation of a sectional representation through the sensor arrangement on the basis of the section line AA from FIG. 1.
  • the sensor arrangement 10 is provided with the first substrate region 21, the second substrate region 22, the active region 23, the housing 30 and the opening 33 shown.
  • the housing 30 is an injection-molded housing, which encloses the elements arranged therein.
  • a specific exemplary embodiment is indicated in FIG. 2, in which, in addition to the substrate 20, a further substrate 26 is present, which, for example, further circuit means for evaluating the signals of the active region
  • both the substrate 20 and the further substrate 26 are arranged on a so-called conductive grid 25, which is also referred to as the leadframe 25, or adhesively bonded or otherwise secured to the leadframe 25.
  • FIG. 3 shows a schematic representation of a second embodiment of a sensor arrangement 10 in the prior art, which has not been published before.
  • the substrate 20 has the first substrate region 21 and the second
  • Substrate region 22, wherein the second substrate portion 22 on the one hand comprises the active region 23 and on the other hand protrudes from the housing 30 at the opening 33.
  • the housing 30 has an extension portion 35 which extends substantially in the main plane of the substrate 20 around the second substrate portion 22 and thus the second
  • FIG. 3 also has a section line AA, with FIG. 4 essentially showing a sectional illustration (with certain deviations) along section line AA from FIG.
  • FIG. 4 shows the mentioned, schematic sectional illustration along the section line AA (with deviations) from FIG. 3, the sensor arrangement 10 again comprising the substrate 20, the first substrate region 21, the second substrate region 22, the active region 23, the further substrate 26, the extension area 35 and the
  • Line grid 25 and the leadframe 25 includes.
  • FIG. 5 shows a schematic plan view of a first sensor arrangement according to the invention. Shown are first from the figure 3 known elements.
  • the substrate 20 has a first substrate region 21, which is not visible here.
  • the substrate 20 has a first substrate region 21, which is not visible here.
  • Substrate 20 further has a second substrate region 22 and, distinguished therefrom by a dot-dash line, a third substrate region 28, the second and third substrate regions 22 and 28 being arranged in the opening 33 of the housing 30.
  • the third substrate region 28 is at least partially supported by a carrier 25.
  • This carrier 25 may be part of the line grid 25, as in this
  • FIG. 5 also has a section line AA, with FIG. 6 essentially showing a sectional view along the section line AA from FIG.
  • FIG. 6 shows a schematic representation of a sectional illustration through a first sensor arrangement according to the invention based on the section line AA from FIG. 5.
  • the support of the substrate 20 in the third substrate region 28 can be recognized by means of the carrier 25.
  • the first substrate region 21 is designed to be significantly smaller than in the state of the technique.
  • the housing 30 is in this example an injection-molded housing, which encloses the elements arranged therein.
  • FIG. 7 shows a schematic representation of the first sensor arrangement according to the invention in phantom.
  • the carrier 25 supports the substrate 20 in the third substrate region 28 in the entire overlap area by mere support of the substrate 20 on the carrier 25.
  • the substrate 20 and the carrier 25 are not fixedly connected to each other here.
  • the carrier 25 is in this embodiment with the rest
  • FIG. 8 shows a schematic representation of a second sensor arrangement according to the invention in phantom.
  • the carrier 25 has two formations in the region of the third substrate region 28 and carries the substrate 20 substantially only selectively in this region.
  • the carrier 25 is furthermore firmly connected to the substrate 20 in the third substrate region 28.
  • the connection may be, for example, an adhesive connection.
  • the carrier 25 in the region of the opening 33 of the housing 30 has a resilient structure, which is indicated schematically here.
  • the resilient structure serves to mechanical forces, the carrier 25 on the substrate 20 in the third
  • Substrate area 28 could exercise to minimize.
  • the carrier 25 is connected in this embodiment only to the housing 30 and not to the line grid 25. However, it may alternatively be connected to the line grid 25.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)

Abstract

L'invention concerne un système de détecteur (10) qui présente un substrat (20) et un boîtier (30). Le boîtier (30) entoure sensiblement complètement le substrat (20) dans une première partie (21) du substrat. Le boîtier (30) est prévu pour être au moins partiellement ouvert au moyen d'une ouverture (33) dans une deuxième partie (22) du substrat. La deuxième partie (22) du substrat déborde du boîtier (30) dans la zone de l'ouverture (33). L'essence de l'invention réside en ce que le substrat (20) est porté au moins en partie sur une troisième partie (28) du substrat par un support (25) qui est relié au boîtier (30).
PCT/EP2007/057744 2006-09-21 2007-07-27 système de détecteur doté d'un substrat et d'un boîtier et procédé de fabrication d'un système de détecteur WO2008034663A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102006044442.6 2006-09-21
DE102006044442A DE102006044442A1 (de) 2006-09-21 2006-09-21 Sensoranordnung mit einem Substrat und mit einem Gehäuse und Verfahren zur Herstellung einer Sensoranordnung

Publications (1)

Publication Number Publication Date
WO2008034663A1 true WO2008034663A1 (fr) 2008-03-27

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PCT/EP2007/057744 WO2008034663A1 (fr) 2006-09-21 2007-07-27 système de détecteur doté d'un substrat et d'un boîtier et procédé de fabrication d'un système de détecteur

Country Status (2)

Country Link
DE (1) DE102006044442A1 (fr)
WO (1) WO2008034663A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007057902A1 (de) * 2007-11-29 2009-06-04 Continental Automotive Gmbh Sensormodul und Verfahren zu seiner Herstellung
DE102009055717A1 (de) * 2009-11-26 2011-06-01 Continental Automotive Gmbh Sensormodul und Herstellungsverfahren eines Sensormoduls

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009002584A1 (de) * 2009-04-23 2010-10-28 Robert Bosch Gmbh Sensoranordnung
DE102010001073A1 (de) 2010-01-21 2011-07-28 Robert Bosch GmbH, 70469 Sensor, insbesondere Niederdrucksensor, zur Messung eines Differenzdrucks

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4219454A1 (de) * 1992-06-13 1993-12-16 Bosch Gmbh Robert Massenflußsensor
EP0801150A2 (fr) * 1996-04-12 1997-10-15 Grundfos A/S Composant électronique
DE19941330A1 (de) * 1999-03-24 2000-10-12 Mitsubishi Electric Corp Wärmeempfindlicher Flussratensensor
DE102004019428A1 (de) * 2004-04-19 2005-08-04 Infineon Technologies Ag Halbleiterbauteil mit einem Hohlraumgehäuse und Verfahren zur Herstellung desselben
DE102005038443A1 (de) * 2005-08-16 2007-02-22 Robert Bosch Gmbh Sensoranordnung mit einem Substrat und mit einem Gehäuse und Verfahren zur Herstellung einer Sensoranordnung

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4219454A1 (de) * 1992-06-13 1993-12-16 Bosch Gmbh Robert Massenflußsensor
EP0801150A2 (fr) * 1996-04-12 1997-10-15 Grundfos A/S Composant électronique
DE19941330A1 (de) * 1999-03-24 2000-10-12 Mitsubishi Electric Corp Wärmeempfindlicher Flussratensensor
DE102004019428A1 (de) * 2004-04-19 2005-08-04 Infineon Technologies Ag Halbleiterbauteil mit einem Hohlraumgehäuse und Verfahren zur Herstellung desselben
DE102005038443A1 (de) * 2005-08-16 2007-02-22 Robert Bosch Gmbh Sensoranordnung mit einem Substrat und mit einem Gehäuse und Verfahren zur Herstellung einer Sensoranordnung

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007057902A1 (de) * 2007-11-29 2009-06-04 Continental Automotive Gmbh Sensormodul und Verfahren zu seiner Herstellung
DE102009055717A1 (de) * 2009-11-26 2011-06-01 Continental Automotive Gmbh Sensormodul und Herstellungsverfahren eines Sensormoduls

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Publication number Publication date
DE102006044442A1 (de) 2008-03-27

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