WO2012097268A3 - Systèmes de dépôt de nanoparticules - Google Patents
Systèmes de dépôt de nanoparticules Download PDFInfo
- Publication number
- WO2012097268A3 WO2012097268A3 PCT/US2012/021269 US2012021269W WO2012097268A3 WO 2012097268 A3 WO2012097268 A3 WO 2012097268A3 US 2012021269 W US2012021269 W US 2012021269W WO 2012097268 A3 WO2012097268 A3 WO 2012097268A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- nanoparticles
- nanoparticle
- substrate
- target
- deposition systems
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/223—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating specially adapted for coating particles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/228—Gas flow assisted PVD deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/342—Hollow targets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3438—Electrodes other than cathode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3455—Movable magnets
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Analytical Chemistry (AREA)
- Mechanical Engineering (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
L'invention concerne des systèmes de dépôt de nanoparticules comprenant un ou plusieurs des éléments suivants : une cible creuse constituée d'un matériau donné ; au moins un aimant rotatif générant un champ magnétique capable de réguler le mouvement des ions et la cristallisation de nanoparticules à partir des atomes libérés ; un dispositif de recueil de nanoparticules qui recueille les nanoparticules cristallisées sur un substrat, le mouvement relatif entre le substrat et au moins une cible exposant en continu de nouvelles zones de la surface du substrat aux nanoparticules cristallisées ; une anode creuse et une cible au moins partiellement située à l'intérieur de ladite anode creuse ; ou une première source de nanoparticules fournissant des premières nanoparticules constituées d'un premier matériau et une seconde source de nanoparticules fournissant des secondes nanoparticules constituées d'un second matériau.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IN5221CHN2013 IN2013CN05221A (fr) | 2011-01-13 | 2012-01-13 | |
CN201280005339.XA CN103459658B (zh) | 2011-01-13 | 2012-01-13 | 纳米颗粒沉积系统 |
RU2013137749/02A RU2013137749A (ru) | 2011-01-13 | 2012-01-13 | Системы осаждения наночастиц |
EP12734741.7A EP2663666A4 (fr) | 2011-01-13 | 2012-01-13 | Systèmes de dépôt de nanoparticules |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161432421P | 2011-01-13 | 2011-01-13 | |
US61/432,421 | 2011-01-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2012097268A2 WO2012097268A2 (fr) | 2012-07-19 |
WO2012097268A3 true WO2012097268A3 (fr) | 2013-01-17 |
Family
ID=46489954
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2012/021269 WO2012097268A2 (fr) | 2011-01-13 | 2012-01-13 | Systèmes de dépôt de nanoparticules |
Country Status (6)
Country | Link |
---|---|
US (2) | US20120181171A1 (fr) |
EP (1) | EP2663666A4 (fr) |
CN (1) | CN103459658B (fr) |
IN (1) | IN2013CN05221A (fr) |
RU (1) | RU2013137749A (fr) |
WO (1) | WO2012097268A2 (fr) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2956258A1 (fr) | 2013-02-15 | 2015-12-23 | Regents of the University of Minnesota | Fonctionnalisation de particules |
KR101772686B1 (ko) | 2016-02-02 | 2017-08-29 | 연세대학교 원주산학협력단 | 나노입자 약물 전달 장치 및 그의 제어 방법 |
US20180171464A1 (en) * | 2016-03-30 | 2018-06-21 | Keihin Ramtech Co., Ltd. | Sputtering cathode, sputtering device, and method for producing film-formed body |
JP6807246B2 (ja) * | 2017-02-23 | 2021-01-06 | 東京エレクトロン株式会社 | 基板処理装置、および、処理システム |
GB2560008B (en) * | 2017-02-24 | 2020-03-25 | Binns David | An appratus and method related to core shell magnetic nanoparticles and structured nanoparticles |
GB2566995B (en) | 2017-09-29 | 2023-01-18 | Cotton Mouton Diagnostics Ltd | A method of detection |
CN110578127B (zh) * | 2019-10-31 | 2024-05-24 | 浙江工业大学 | 一种提升磁控溅射镀膜沉积速率装置 |
CN113564553A (zh) * | 2021-08-06 | 2021-10-29 | 昆山祁御新材料科技有限公司 | 一种旋转靶材的制作工艺及设备 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6077403A (en) * | 1997-06-06 | 2000-06-20 | Anelva Corporation | Sputtering device and sputtering method |
US20060081467A1 (en) * | 2004-10-15 | 2006-04-20 | Makoto Nagashima | Systems and methods for magnetron deposition |
US20090020416A1 (en) * | 2007-07-18 | 2009-01-22 | Applied Materials, Inc. | Sputter coating device and method of depositing a layer on a substrate |
EP2136388A2 (fr) * | 2008-06-20 | 2009-12-23 | Mantis Deposition Limited | Dépôt de matériaux |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3669860A (en) * | 1970-04-01 | 1972-06-13 | Zenith Radio Corp | Method and apparatus for applying a film to a substrate surface by diode sputtering |
JP3034076B2 (ja) * | 1991-04-18 | 2000-04-17 | 日本真空技術株式会社 | 金属イオン源 |
US5228963A (en) * | 1991-07-01 | 1993-07-20 | Himont Incorporated | Hollow-cathode magnetron and method of making thin films |
US5482611A (en) * | 1991-09-30 | 1996-01-09 | Helmer; John C. | Physical vapor deposition employing ion extraction from a plasma |
US5334302A (en) * | 1991-11-15 | 1994-08-02 | Tokyo Electron Limited | Magnetron sputtering apparatus and sputtering gun for use in the same |
US7144627B2 (en) * | 1997-03-12 | 2006-12-05 | William Marsh Rice University | Multi-layer nanoshells comprising a metallic or conducting shell |
US6217716B1 (en) * | 1998-05-06 | 2001-04-17 | Novellus Systems, Inc. | Apparatus and method for improving target erosion in hollow cathode magnetron sputter source |
SE521904C2 (sv) * | 1999-11-26 | 2003-12-16 | Ladislav Bardos | Anordning för hybridplasmabehandling |
US20040000478A1 (en) * | 2002-06-26 | 2004-01-01 | Guenzer Charles S. | Rotating hollow cathode magnetron |
CN101297059A (zh) * | 2005-10-24 | 2008-10-29 | 索莱拉斯有限公司 | 结合固定或者旋转靶的阴极与移动磁体组件的组合及其应用 |
WO2007068133A1 (fr) * | 2005-12-13 | 2007-06-21 | Oc Oerlikon Balzers Ag | Utilisation amelioree d’une cible de pulverisation cathodique |
US7951276B2 (en) * | 2006-06-08 | 2011-05-31 | The Board Of Trustees Of The University Of Illinois | Cluster generator |
CA2765337C (fr) * | 2008-06-13 | 2016-05-17 | Fablab Inc. | Systeme et procede de fabrication d'objets macroscopiques, et objets nano-assembles ainsi obtenus |
CN201545907U (zh) * | 2009-11-17 | 2010-08-11 | 深圳市振恒昌实业有限公司 | 一种新型靶管旋转磁控溅射圆柱靶 |
WO2011159834A1 (fr) * | 2010-06-15 | 2011-12-22 | Superdimension, Ltd. | Canal de travail expansible localisable, et procédé associé |
-
2012
- 2012-01-13 EP EP12734741.7A patent/EP2663666A4/fr not_active Withdrawn
- 2012-01-13 IN IN5221CHN2013 patent/IN2013CN05221A/en unknown
- 2012-01-13 CN CN201280005339.XA patent/CN103459658B/zh not_active Expired - Fee Related
- 2012-01-13 RU RU2013137749/02A patent/RU2013137749A/ru not_active Application Discontinuation
- 2012-01-13 US US13/350,421 patent/US20120181171A1/en not_active Abandoned
- 2012-01-13 WO PCT/US2012/021269 patent/WO2012097268A2/fr active Application Filing
-
2017
- 2017-09-22 US US15/712,638 patent/US20180127865A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6077403A (en) * | 1997-06-06 | 2000-06-20 | Anelva Corporation | Sputtering device and sputtering method |
US20060081467A1 (en) * | 2004-10-15 | 2006-04-20 | Makoto Nagashima | Systems and methods for magnetron deposition |
US20090020416A1 (en) * | 2007-07-18 | 2009-01-22 | Applied Materials, Inc. | Sputter coating device and method of depositing a layer on a substrate |
EP2136388A2 (fr) * | 2008-06-20 | 2009-12-23 | Mantis Deposition Limited | Dépôt de matériaux |
Non-Patent Citations (1)
Title |
---|
See also references of EP2663666A4 * |
Also Published As
Publication number | Publication date |
---|---|
EP2663666A4 (fr) | 2014-08-20 |
IN2013CN05221A (fr) | 2015-08-07 |
CN103459658A (zh) | 2013-12-18 |
US20180127865A1 (en) | 2018-05-10 |
WO2012097268A2 (fr) | 2012-07-19 |
CN103459658B (zh) | 2015-09-23 |
EP2663666A2 (fr) | 2013-11-20 |
RU2013137749A (ru) | 2015-02-20 |
US20120181171A1 (en) | 2012-07-19 |
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