WO2012097268A3 - Systèmes de dépôt de nanoparticules - Google Patents

Systèmes de dépôt de nanoparticules Download PDF

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Publication number
WO2012097268A3
WO2012097268A3 PCT/US2012/021269 US2012021269W WO2012097268A3 WO 2012097268 A3 WO2012097268 A3 WO 2012097268A3 US 2012021269 W US2012021269 W US 2012021269W WO 2012097268 A3 WO2012097268 A3 WO 2012097268A3
Authority
WO
WIPO (PCT)
Prior art keywords
nanoparticles
nanoparticle
substrate
target
deposition systems
Prior art date
Application number
PCT/US2012/021269
Other languages
English (en)
Other versions
WO2012097268A2 (fr
Inventor
Jian-Ping Wang
Shihai HE
Original Assignee
Regents Of The University Of Minnesota
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Regents Of The University Of Minnesota filed Critical Regents Of The University Of Minnesota
Priority to IN5221CHN2013 priority Critical patent/IN2013CN05221A/en
Priority to EP12734741.7A priority patent/EP2663666A4/fr
Priority to CN201280005339.XA priority patent/CN103459658B/zh
Priority to RU2013137749/02A priority patent/RU2013137749A/ru
Publication of WO2012097268A2 publication Critical patent/WO2012097268A2/fr
Publication of WO2012097268A3 publication Critical patent/WO2012097268A3/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/223—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating specially adapted for coating particles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/342—Hollow targets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3438—Electrodes other than cathode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

L'invention concerne des systèmes de dépôt de nanoparticules comprenant un ou plusieurs des éléments suivants : une cible creuse constituée d'un matériau donné ; au moins un aimant rotatif générant un champ magnétique capable de réguler le mouvement des ions et la cristallisation de nanoparticules à partir des atomes libérés ; un dispositif de recueil de nanoparticules qui recueille les nanoparticules cristallisées sur un substrat, le mouvement relatif entre le substrat et au moins une cible exposant en continu de nouvelles zones de la surface du substrat aux nanoparticules cristallisées ; une anode creuse et une cible au moins partiellement située à l'intérieur de ladite anode creuse ; ou une première source de nanoparticules fournissant des premières nanoparticules constituées d'un premier matériau et une seconde source de nanoparticules fournissant des secondes nanoparticules constituées d'un second matériau.
PCT/US2012/021269 2011-01-13 2012-01-13 Systèmes de dépôt de nanoparticules WO2012097268A2 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
IN5221CHN2013 IN2013CN05221A (fr) 2011-01-13 2012-01-13
EP12734741.7A EP2663666A4 (fr) 2011-01-13 2012-01-13 Systèmes de dépôt de nanoparticules
CN201280005339.XA CN103459658B (zh) 2011-01-13 2012-01-13 纳米颗粒沉积系统
RU2013137749/02A RU2013137749A (ru) 2011-01-13 2012-01-13 Системы осаждения наночастиц

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161432421P 2011-01-13 2011-01-13
US61/432,421 2011-01-13

Publications (2)

Publication Number Publication Date
WO2012097268A2 WO2012097268A2 (fr) 2012-07-19
WO2012097268A3 true WO2012097268A3 (fr) 2013-01-17

Family

ID=46489954

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2012/021269 WO2012097268A2 (fr) 2011-01-13 2012-01-13 Systèmes de dépôt de nanoparticules

Country Status (6)

Country Link
US (2) US20120181171A1 (fr)
EP (1) EP2663666A4 (fr)
CN (1) CN103459658B (fr)
IN (1) IN2013CN05221A (fr)
RU (1) RU2013137749A (fr)
WO (1) WO2012097268A2 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014127230A1 (fr) * 2013-02-15 2014-08-21 Regents Of The University Of Minnesota Fonctionnalisation de particules
KR101772686B1 (ko) 2016-02-02 2017-08-29 연세대학교 원주산학협력단 나노입자 약물 전달 장치 및 그의 제어 방법
KR20200036065A (ko) * 2016-03-30 2020-04-06 케이힌 람테크 가부시키가이샤 스퍼터링 캐소드, 스퍼터링 장치 및 성막체의 제조 방법
JP6807246B2 (ja) * 2017-02-23 2021-01-06 東京エレクトロン株式会社 基板処理装置、および、処理システム
GB2560008B (en) * 2017-02-24 2020-03-25 Binns David An appratus and method related to core shell magnetic nanoparticles and structured nanoparticles
GB2566995B (en) 2017-09-29 2023-01-18 Cotton Mouton Diagnostics Ltd A method of detection
CN110578127B (zh) * 2019-10-31 2024-05-24 浙江工业大学 一种提升磁控溅射镀膜沉积速率装置
CN113564553A (zh) * 2021-08-06 2021-10-29 昆山祁御新材料科技有限公司 一种旋转靶材的制作工艺及设备

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6077403A (en) * 1997-06-06 2000-06-20 Anelva Corporation Sputtering device and sputtering method
US20060081467A1 (en) * 2004-10-15 2006-04-20 Makoto Nagashima Systems and methods for magnetron deposition
US20090020416A1 (en) * 2007-07-18 2009-01-22 Applied Materials, Inc. Sputter coating device and method of depositing a layer on a substrate
EP2136388A2 (fr) * 2008-06-20 2009-12-23 Mantis Deposition Limited Dépôt de matériaux

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3669860A (en) * 1970-04-01 1972-06-13 Zenith Radio Corp Method and apparatus for applying a film to a substrate surface by diode sputtering
JP3034076B2 (ja) * 1991-04-18 2000-04-17 日本真空技術株式会社 金属イオン源
US5228963A (en) * 1991-07-01 1993-07-20 Himont Incorporated Hollow-cathode magnetron and method of making thin films
US5482611A (en) * 1991-09-30 1996-01-09 Helmer; John C. Physical vapor deposition employing ion extraction from a plasma
US5334302A (en) * 1991-11-15 1994-08-02 Tokyo Electron Limited Magnetron sputtering apparatus and sputtering gun for use in the same
US7144627B2 (en) * 1997-03-12 2006-12-05 William Marsh Rice University Multi-layer nanoshells comprising a metallic or conducting shell
US6217716B1 (en) * 1998-05-06 2001-04-17 Novellus Systems, Inc. Apparatus and method for improving target erosion in hollow cathode magnetron sputter source
SE521904C2 (sv) * 1999-11-26 2003-12-16 Ladislav Bardos Anordning för hybridplasmabehandling
US20040000478A1 (en) * 2002-06-26 2004-01-01 Guenzer Charles S. Rotating hollow cathode magnetron
EP1941071A4 (fr) * 2005-10-24 2010-04-07 Soleras Ltd Cathode incorporant une cible fixe ou rotative en combinaison avec un ensemble d'aimant mobile et son utilisation
ATE553495T1 (de) * 2005-12-13 2012-04-15 Oerlikon Solar Ag Verbesserte sputter-target-nutzung
US7951276B2 (en) * 2006-06-08 2011-05-31 The Board Of Trustees Of The University Of Illinois Cluster generator
CA2765337C (fr) * 2008-06-13 2016-05-17 Fablab Inc. Systeme et procede de fabrication d'objets macroscopiques, et objets nano-assembles ainsi obtenus
CN201545907U (zh) * 2009-11-17 2010-08-11 深圳市振恒昌实业有限公司 一种新型靶管旋转磁控溅射圆柱靶
WO2011159834A1 (fr) * 2010-06-15 2011-12-22 Superdimension, Ltd. Canal de travail expansible localisable, et procédé associé

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6077403A (en) * 1997-06-06 2000-06-20 Anelva Corporation Sputtering device and sputtering method
US20060081467A1 (en) * 2004-10-15 2006-04-20 Makoto Nagashima Systems and methods for magnetron deposition
US20090020416A1 (en) * 2007-07-18 2009-01-22 Applied Materials, Inc. Sputter coating device and method of depositing a layer on a substrate
EP2136388A2 (fr) * 2008-06-20 2009-12-23 Mantis Deposition Limited Dépôt de matériaux

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2663666A4 *

Also Published As

Publication number Publication date
US20120181171A1 (en) 2012-07-19
WO2012097268A2 (fr) 2012-07-19
CN103459658B (zh) 2015-09-23
US20180127865A1 (en) 2018-05-10
IN2013CN05221A (fr) 2015-08-07
EP2663666A4 (fr) 2014-08-20
EP2663666A2 (fr) 2013-11-20
RU2013137749A (ru) 2015-02-20
CN103459658A (zh) 2013-12-18

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