WO2012095117A1 - Capteur de pression micromécanique et son procédé de fabrication - Google Patents
Capteur de pression micromécanique et son procédé de fabrication Download PDFInfo
- Publication number
- WO2012095117A1 WO2012095117A1 PCT/EP2011/000096 EP2011000096W WO2012095117A1 WO 2012095117 A1 WO2012095117 A1 WO 2012095117A1 EP 2011000096 W EP2011000096 W EP 2011000096W WO 2012095117 A1 WO2012095117 A1 WO 2012095117A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- pressure sensor
- membrane
- silicon
- gate electrode
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 239000012528 membrane Substances 0.000 claims abstract description 74
- 239000004065 semiconductor Substances 0.000 claims abstract description 35
- 238000000034 method Methods 0.000 claims abstract description 31
- 238000009413 insulation Methods 0.000 claims abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 52
- 229910052710 silicon Inorganic materials 0.000 claims description 52
- 239000010703 silicon Substances 0.000 claims description 52
- 150000002500 ions Chemical class 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 238000000137 annealing Methods 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- 238000002513 implantation Methods 0.000 claims description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 5
- 150000002739 metals Chemical class 0.000 claims description 4
- -1 oxygen ions Chemical class 0.000 claims description 4
- 238000001020 plasma etching Methods 0.000 claims description 3
- 238000003631 wet chemical etching Methods 0.000 claims 1
- 230000008859 change Effects 0.000 description 14
- 230000004888 barrier function Effects 0.000 description 13
- 235000012431 wafers Nutrition 0.000 description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
- 239000000758 substrate Substances 0.000 description 11
- 230000000694 effects Effects 0.000 description 10
- 229920005591 polysilicon Polymers 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 230000035945 sensitivity Effects 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 230000005669 field effect Effects 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 238000009530 blood pressure measurement Methods 0.000 description 4
- 230000001419 dependent effect Effects 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 238000005036 potential barrier Methods 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000005641 tunneling Effects 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000005496 tempering Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000036772 blood pressure Effects 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- RJCRUVXAWQRZKQ-UHFFFAOYSA-N oxosilicon;silicon Chemical compound [Si].[Si]=O RJCRUVXAWQRZKQ-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0098—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means using semiconductor body comprising at least one PN junction as detecting element
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00158—Diaphragms, membranes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/01—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS
- B81B2207/015—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS the micromechanical device and the control or processing electronics being integrated on the same substrate
Abstract
L'invention porte sur un capteur de pression micromécanique (1) et sur son procédé de fabrication, le capteur présentant une membrane (3) placée dans une première couche de semi-conducteur (2) et une couche sacrificielle (4) sur laquelle la couche de semi-conducteur (2) est déposée. Dans la membrane (3), se trouvent une région de drain (7) et une région de source (8) qui se font mutuellement face et qui sont séparées l'une de l'autre par un canal de passage (12), la couche sacrificielle (4) formant une couche isolante (4) au-dessous de laquelle se trouve une autre couche (5) comportant une électrode de grille (6) qui fait face au canal de passage (12). Une cavité (9) est formée entre l'autre couche (5) et la membrane (3), ladite cavité étant placée dans la couche isolante (4) et la membrane pouvant s'engager dans ladite cavité en réponse à une pression exercée sur le capteur de pression. L'invention porte en outre sur un procédé de mesure de la pression.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/EP2011/000096 WO2012095117A1 (fr) | 2011-01-12 | 2011-01-12 | Capteur de pression micromécanique et son procédé de fabrication |
| EP11702921.5A EP2663849A1 (fr) | 2011-01-12 | 2011-01-12 | Capteur de pression micromécanique et son procédé de fabrication |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/EP2011/000096 WO2012095117A1 (fr) | 2011-01-12 | 2011-01-12 | Capteur de pression micromécanique et son procédé de fabrication |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2012095117A1 true WO2012095117A1 (fr) | 2012-07-19 |
Family
ID=44625110
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/EP2011/000096 WO2012095117A1 (fr) | 2011-01-12 | 2011-01-12 | Capteur de pression micromécanique et son procédé de fabrication |
Country Status (2)
| Country | Link |
|---|---|
| EP (1) | EP2663849A1 (fr) |
| WO (1) | WO2012095117A1 (fr) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013028412A1 (fr) * | 2011-08-24 | 2013-02-28 | Qualcomm Mems Technologies, Inc. | Transistor à couches minces avec interstice de siliciure |
| DE102012023429B3 (de) * | 2012-11-29 | 2013-08-22 | Elmos Semiconductor Ag | CMOS kompatibler Drucksensor auf Tunneleffekt-Basis mit Verfahren |
| CN108467005A (zh) * | 2017-02-09 | 2018-08-31 | 英飞凌科技股份有限公司 | 半导体装置和用于形成半导体装置的方法 |
| CN109721021A (zh) * | 2017-10-30 | 2019-05-07 | 中芯国际集成电路制造(上海)有限公司 | 一种mems器件及制备方法、电子装置 |
| CN111415993A (zh) * | 2020-03-16 | 2020-07-14 | 中国科学院微电子研究所 | 一种多介质检测传感器及其制作方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4031369A1 (de) * | 1990-10-04 | 1992-04-09 | Bosch Gmbh Robert | Sensor |
| US7235456B2 (en) | 1999-08-31 | 2007-06-26 | Kabushiki Kaisha Toshiba | Method of making empty space in silicon |
| US7512170B2 (en) | 2001-05-16 | 2009-03-31 | Micron Technology, Inc. | Method of forming mirrors by surface transformation of empty spaces in solid state materials |
| WO2009128084A1 (fr) * | 2008-04-15 | 2009-10-22 | Indian Institute Of Science | Capteur tec de déviation élastique sous le seuil pour détecter une pression/force, procédé et système à cet effet |
-
2011
- 2011-01-12 EP EP11702921.5A patent/EP2663849A1/fr not_active Withdrawn
- 2011-01-12 WO PCT/EP2011/000096 patent/WO2012095117A1/fr active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4031369A1 (de) * | 1990-10-04 | 1992-04-09 | Bosch Gmbh Robert | Sensor |
| US7235456B2 (en) | 1999-08-31 | 2007-06-26 | Kabushiki Kaisha Toshiba | Method of making empty space in silicon |
| US7512170B2 (en) | 2001-05-16 | 2009-03-31 | Micron Technology, Inc. | Method of forming mirrors by surface transformation of empty spaces in solid state materials |
| WO2009128084A1 (fr) * | 2008-04-15 | 2009-10-22 | Indian Institute Of Science | Capteur tec de déviation élastique sous le seuil pour détecter une pression/force, procédé et système à cet effet |
Non-Patent Citations (6)
| Title |
|---|
| "A novel MEMS pressure sensor with MOSFET on chip", IEEE SENSORS 2008, 2008, pages 1564 |
| "A novel suspended gate MOSFET pressure sensor", SMART SENSORS, ACTUATORS AND MEMS, vol. 5836, 2005, pages 363 |
| FERNANDEZ-BOLANOS M ET AL: "Polyimide sacrificial layer for SOI SG-MOSFET pressure sensor", MICROELECTRONIC ENGINEERING APRIL/SEPTEMBER 2006 ELSEVIER NL, vol. 83, no. 4-9 SPEC. ISS., April 2006 (2006-04-01), pages 1185 - 1188, XP002660486, DOI: DOI:10.1016/J.MEE.2005.12.021 * |
| H. DUDAICEVS, M. KANDIER, Y. MANOLI, W. MOKWA, E. SPIEGEL, SENSORS ACTUATORS A, vol. 43, 1994, pages 157 |
| J.A. SEGOVIA, M. FEMANDEZ-BOLANOS, J.M. OUERO, Y.-H. ZHANG, L-T. LIU, Z.-H. ZHANG, Z.-M. TAN, H.-W. LIN, T.-L. REN: "A novel MOSFET pressure microsensor", INTERNAT. CONF. ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY 2006, 2006, pages 614, XP031045665 |
| Z.-H, ZHANG, Y.-H. ZHANG, L-T. LIU, T.-L. REN, R. SINGH, L.L. NGO, H.S. SENG, F.N.C. MOK: "A silicon piezoresistive pressure sensor", PROC. 1ST IEEE INTERNAT. WORKSHOP ELECTRON DESIGN, TEST APPL., 2002 |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013028412A1 (fr) * | 2011-08-24 | 2013-02-28 | Qualcomm Mems Technologies, Inc. | Transistor à couches minces avec interstice de siliciure |
| DE102012023429B3 (de) * | 2012-11-29 | 2013-08-22 | Elmos Semiconductor Ag | CMOS kompatibler Drucksensor auf Tunneleffekt-Basis mit Verfahren |
| DE102012023429B8 (de) * | 2012-11-29 | 2013-10-24 | Elmos Semiconductor Ag | CMOS kompatibler Drucksensor auf Tunneleffekt-Basis mit Verfahren |
| DE102013019579A1 (de) | 2012-11-29 | 2014-06-05 | Elmos Semiconductor Ag | CMOS kompatibler Drucksensor auf Tunneleffekt-Basis mit verringerter Temperaturhysterese |
| DE102013019579B4 (de) | 2012-11-29 | 2023-09-28 | Measurement Specialties, Inc. | CMOS kompatibler Drucksensor auf Tunneleffekt-Basis mit verringerter Temperaturhysterese |
| CN108467005A (zh) * | 2017-02-09 | 2018-08-31 | 英飞凌科技股份有限公司 | 半导体装置和用于形成半导体装置的方法 |
| CN108467005B (zh) * | 2017-02-09 | 2023-02-21 | 英飞凌科技股份有限公司 | 半导体装置和用于形成半导体装置的方法 |
| CN109721021A (zh) * | 2017-10-30 | 2019-05-07 | 中芯国际集成电路制造(上海)有限公司 | 一种mems器件及制备方法、电子装置 |
| CN109721021B (zh) * | 2017-10-30 | 2021-02-02 | 中芯国际集成电路制造(上海)有限公司 | 一种mems器件及制备方法、电子装置 |
| CN111415993A (zh) * | 2020-03-16 | 2020-07-14 | 中国科学院微电子研究所 | 一种多介质检测传感器及其制作方法 |
| CN111415993B (zh) * | 2020-03-16 | 2023-11-21 | 中国科学院微电子研究所 | 一种多介质检测传感器及其制作方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2663849A1 (fr) | 2013-11-20 |
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