DE102012023429B8 - CMOS kompatibler Drucksensor auf Tunneleffekt-Basis mit Verfahren - Google Patents

CMOS kompatibler Drucksensor auf Tunneleffekt-Basis mit Verfahren Download PDF

Info

Publication number
DE102012023429B8
DE102012023429B8 DE102012023429A DE102012023429A DE102012023429B8 DE 102012023429 B8 DE102012023429 B8 DE 102012023429B8 DE 102012023429 A DE102012023429 A DE 102012023429A DE 102012023429 A DE102012023429 A DE 102012023429A DE 102012023429 B8 DE102012023429 B8 DE 102012023429B8
Authority
DE
Germany
Prior art keywords
effect
pressure sensor
based pressure
cmos compatible
compatible tunnel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE102012023429A
Other languages
English (en)
Other versions
DE102012023429B3 (de
Inventor
Bernd Burchard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Measurement Specialties Inc Hampton Us
Original Assignee
Elmos Semiconductor SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Elmos Semiconductor SE filed Critical Elmos Semiconductor SE
Priority to DE102012023429A priority Critical patent/DE102012023429B8/de
Publication of DE102012023429B3 publication Critical patent/DE102012023429B3/de
Application granted granted Critical
Publication of DE102012023429B8 publication Critical patent/DE102012023429B8/de
Priority to DE102013019579.9A priority patent/DE102013019579B4/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/88—Tunnel-effect diodes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0098—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means using semiconductor body comprising at least one PN junction as detecting element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)
DE102012023429A 2012-11-29 2012-11-29 CMOS kompatibler Drucksensor auf Tunneleffekt-Basis mit Verfahren Active DE102012023429B8 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE102012023429A DE102012023429B8 (de) 2012-11-29 2012-11-29 CMOS kompatibler Drucksensor auf Tunneleffekt-Basis mit Verfahren
DE102013019579.9A DE102013019579B4 (de) 2012-11-29 2013-11-19 CMOS kompatibler Drucksensor auf Tunneleffekt-Basis mit verringerter Temperaturhysterese

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102012023429A DE102012023429B8 (de) 2012-11-29 2012-11-29 CMOS kompatibler Drucksensor auf Tunneleffekt-Basis mit Verfahren

Publications (2)

Publication Number Publication Date
DE102012023429B3 DE102012023429B3 (de) 2013-08-22
DE102012023429B8 true DE102012023429B8 (de) 2013-10-24

Family

ID=48915444

Family Applications (2)

Application Number Title Priority Date Filing Date
DE102012023429A Active DE102012023429B8 (de) 2012-11-29 2012-11-29 CMOS kompatibler Drucksensor auf Tunneleffekt-Basis mit Verfahren
DE102013019579.9A Active DE102013019579B4 (de) 2012-11-29 2013-11-19 CMOS kompatibler Drucksensor auf Tunneleffekt-Basis mit verringerter Temperaturhysterese

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE102013019579.9A Active DE102013019579B4 (de) 2012-11-29 2013-11-19 CMOS kompatibler Drucksensor auf Tunneleffekt-Basis mit verringerter Temperaturhysterese

Country Status (1)

Country Link
DE (2) DE102012023429B8 (de)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4238545A1 (de) * 1992-11-14 1994-05-19 Daimler Benz Ag Drucksensor und ein Verfahren zu dessen Herstellung
US20020072144A1 (en) * 2000-12-11 2002-06-13 Gogoi Bishnu P. Integrated CMOS capacitive pressure sensor
DE69529446T2 (de) * 1994-10-05 2003-10-02 Matsushita Electric Ind Co Ltd Tunnelstromsensor
DE102010043277A1 (de) * 2010-11-03 2012-05-03 Robert Bosch Gmbh Mikroelektromechanischer Sensor zur Messung einer Kraft sowie entsprechendes Verfahren
WO2012095117A1 (de) * 2011-01-12 2012-07-19 Technische Universität Dortmund Mikromechanischer drucksensor und verfahren zu dessen herstellung

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10014048A1 (de) 2000-03-23 2001-10-11 Rubitec Gesellschaft Fuer Innovation & Technologie Ruhr Univ Bochum Mbh Druck-und Temperatursensor

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4238545A1 (de) * 1992-11-14 1994-05-19 Daimler Benz Ag Drucksensor und ein Verfahren zu dessen Herstellung
DE69529446T2 (de) * 1994-10-05 2003-10-02 Matsushita Electric Ind Co Ltd Tunnelstromsensor
US20020072144A1 (en) * 2000-12-11 2002-06-13 Gogoi Bishnu P. Integrated CMOS capacitive pressure sensor
DE102010043277A1 (de) * 2010-11-03 2012-05-03 Robert Bosch Gmbh Mikroelektromechanischer Sensor zur Messung einer Kraft sowie entsprechendes Verfahren
WO2012095117A1 (de) * 2011-01-12 2012-07-19 Technische Universität Dortmund Mikromechanischer drucksensor und verfahren zu dessen herstellung

Also Published As

Publication number Publication date
DE102012023429B3 (de) 2013-08-22
DE102013019579A1 (de) 2014-06-05
DE102013019579B4 (de) 2023-09-28

Similar Documents

Publication Publication Date Title
GB2500255B (en) Optical sensor
LU92149B1 (en) Capacitive sensor
EP2846143A4 (de) Drucksensor
EP2967367A4 (de) Optische drucksensoranordnung
DK2766705T3 (da) Tryksensor
EP3005047A4 (de) Optische näherungssensoren
EP2804022A4 (de) Näherungssensor
EP2833111A4 (de) Kapazitiver sensor
GB2542284B (en) Optical pressure sensor
GB2503466B (en) Optical sensor
EP2924408A4 (de) Drucksensor
FI20135618A (fi) Parannettu paineanturi
EP2894677A4 (de) Optische sensoreinheit
EP2706337C0 (de) Kapazitiver Drucksensor
EP2811271A4 (de) Infrarotsensor
PL3000133T3 (pl) Czujnik piezoelektryczny
EP2808654A4 (de) Fasersensor
DK2936102T3 (da) Tryksensor
HK1209825A1 (en) Pressure sensor
FI20135487A (fi) Parannettu paineanturi
EP2829951A4 (de) Optischer sensor
GB201218956D0 (en) Fluid sensor
EP2813806A4 (de) Optischer sensor
HK1198800A1 (en) Capacitive sensor
EP2818841A4 (de) Drucksensor

Legal Events

Date Code Title Description
R012 Request for examination validly filed
R016 Response to examination communication
R016 Response to examination communication
R018 Grant decision by examination section/examining division
R020 Patent grant now final

Effective date: 20131123

R081 Change of applicant/patentee

Owner name: ELMOS SEMICONDUCTOR AKTIENGESELLSCHAFT, DE

Free format text: FORMER OWNER: ELMOS SEMICONDUCTOR AG, 44227 DORTMUND, DE

Effective date: 20150108

Owner name: ELMOS SEMICONDUCTOR AKTIENGESELLSCHAFT, DE

Free format text: FORMER OWNER: BURCHARD, BERND, DR., 45276 ESSEN, DE

Effective date: 20130308

R082 Change of representative

Representative=s name: DOMPATENT VON KREISLER SELTING WERNER - PARTNE, DE

R081 Change of applicant/patentee

Owner name: MEASUREMENT SPECIALTIES, INC., HAMPTON, US

Free format text: FORMER OWNER: ELMOS SEMICONDUCTOR AKTIENGESELLSCHAFT, 44227 DORTMUND, DE

Owner name: SILICON MICROSTRUCTURES, INC., MILPITAS, US

Free format text: FORMER OWNER: ELMOS SEMICONDUCTOR AKTIENGESELLSCHAFT, 44227 DORTMUND, DE

R082 Change of representative

Representative=s name: DOMPATENT VON KREISLER SELTING WERNER - PARTNE, DE

R081 Change of applicant/patentee

Owner name: MEASUREMENT SPECIALTIES, INC., HAMPTON, US

Free format text: FORMER OWNER: SILICON MICROSTRUCTURES, INC., MILPITAS, CALIF., US