DE102012023429B8 - CMOS kompatibler Drucksensor auf Tunneleffekt-Basis mit Verfahren - Google Patents
CMOS kompatibler Drucksensor auf Tunneleffekt-Basis mit Verfahren Download PDFInfo
- Publication number
- DE102012023429B8 DE102012023429B8 DE102012023429A DE102012023429A DE102012023429B8 DE 102012023429 B8 DE102012023429 B8 DE 102012023429B8 DE 102012023429 A DE102012023429 A DE 102012023429A DE 102012023429 A DE102012023429 A DE 102012023429A DE 102012023429 B8 DE102012023429 B8 DE 102012023429B8
- Authority
- DE
- Germany
- Prior art keywords
- effect
- pressure sensor
- based pressure
- cmos compatible
- compatible tunnel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/88—Tunnel-effect diodes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0098—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means using semiconductor body comprising at least one PN junction as detecting element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102012023429A DE102012023429B8 (de) | 2012-11-29 | 2012-11-29 | CMOS kompatibler Drucksensor auf Tunneleffekt-Basis mit Verfahren |
DE102013019579.9A DE102013019579B4 (de) | 2012-11-29 | 2013-11-19 | CMOS kompatibler Drucksensor auf Tunneleffekt-Basis mit verringerter Temperaturhysterese |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102012023429A DE102012023429B8 (de) | 2012-11-29 | 2012-11-29 | CMOS kompatibler Drucksensor auf Tunneleffekt-Basis mit Verfahren |
Publications (2)
Publication Number | Publication Date |
---|---|
DE102012023429B3 DE102012023429B3 (de) | 2013-08-22 |
DE102012023429B8 true DE102012023429B8 (de) | 2013-10-24 |
Family
ID=48915444
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102012023429A Active DE102012023429B8 (de) | 2012-11-29 | 2012-11-29 | CMOS kompatibler Drucksensor auf Tunneleffekt-Basis mit Verfahren |
DE102013019579.9A Active DE102013019579B4 (de) | 2012-11-29 | 2013-11-19 | CMOS kompatibler Drucksensor auf Tunneleffekt-Basis mit verringerter Temperaturhysterese |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102013019579.9A Active DE102013019579B4 (de) | 2012-11-29 | 2013-11-19 | CMOS kompatibler Drucksensor auf Tunneleffekt-Basis mit verringerter Temperaturhysterese |
Country Status (1)
Country | Link |
---|---|
DE (2) | DE102012023429B8 (de) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4238545A1 (de) * | 1992-11-14 | 1994-05-19 | Daimler Benz Ag | Drucksensor und ein Verfahren zu dessen Herstellung |
US20020072144A1 (en) * | 2000-12-11 | 2002-06-13 | Gogoi Bishnu P. | Integrated CMOS capacitive pressure sensor |
DE69529446T2 (de) * | 1994-10-05 | 2003-10-02 | Matsushita Electric Ind Co Ltd | Tunnelstromsensor |
DE102010043277A1 (de) * | 2010-11-03 | 2012-05-03 | Robert Bosch Gmbh | Mikroelektromechanischer Sensor zur Messung einer Kraft sowie entsprechendes Verfahren |
WO2012095117A1 (de) * | 2011-01-12 | 2012-07-19 | Technische Universität Dortmund | Mikromechanischer drucksensor und verfahren zu dessen herstellung |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10014048A1 (de) | 2000-03-23 | 2001-10-11 | Rubitec Gesellschaft Fuer Innovation & Technologie Ruhr Univ Bochum Mbh | Druck-und Temperatursensor |
-
2012
- 2012-11-29 DE DE102012023429A patent/DE102012023429B8/de active Active
-
2013
- 2013-11-19 DE DE102013019579.9A patent/DE102013019579B4/de active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4238545A1 (de) * | 1992-11-14 | 1994-05-19 | Daimler Benz Ag | Drucksensor und ein Verfahren zu dessen Herstellung |
DE69529446T2 (de) * | 1994-10-05 | 2003-10-02 | Matsushita Electric Ind Co Ltd | Tunnelstromsensor |
US20020072144A1 (en) * | 2000-12-11 | 2002-06-13 | Gogoi Bishnu P. | Integrated CMOS capacitive pressure sensor |
DE102010043277A1 (de) * | 2010-11-03 | 2012-05-03 | Robert Bosch Gmbh | Mikroelektromechanischer Sensor zur Messung einer Kraft sowie entsprechendes Verfahren |
WO2012095117A1 (de) * | 2011-01-12 | 2012-07-19 | Technische Universität Dortmund | Mikromechanischer drucksensor und verfahren zu dessen herstellung |
Also Published As
Publication number | Publication date |
---|---|
DE102012023429B3 (de) | 2013-08-22 |
DE102013019579A1 (de) | 2014-06-05 |
DE102013019579B4 (de) | 2023-09-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
R012 | Request for examination validly filed | ||
R016 | Response to examination communication | ||
R016 | Response to examination communication | ||
R018 | Grant decision by examination section/examining division | ||
R020 | Patent grant now final |
Effective date: 20131123 |
|
R081 | Change of applicant/patentee |
Owner name: ELMOS SEMICONDUCTOR AKTIENGESELLSCHAFT, DE Free format text: FORMER OWNER: ELMOS SEMICONDUCTOR AG, 44227 DORTMUND, DE Effective date: 20150108 Owner name: ELMOS SEMICONDUCTOR AKTIENGESELLSCHAFT, DE Free format text: FORMER OWNER: BURCHARD, BERND, DR., 45276 ESSEN, DE Effective date: 20130308 |
|
R082 | Change of representative |
Representative=s name: DOMPATENT VON KREISLER SELTING WERNER - PARTNE, DE |
|
R081 | Change of applicant/patentee |
Owner name: MEASUREMENT SPECIALTIES, INC., HAMPTON, US Free format text: FORMER OWNER: ELMOS SEMICONDUCTOR AKTIENGESELLSCHAFT, 44227 DORTMUND, DE Owner name: SILICON MICROSTRUCTURES, INC., MILPITAS, US Free format text: FORMER OWNER: ELMOS SEMICONDUCTOR AKTIENGESELLSCHAFT, 44227 DORTMUND, DE |
|
R082 | Change of representative |
Representative=s name: DOMPATENT VON KREISLER SELTING WERNER - PARTNE, DE |
|
R081 | Change of applicant/patentee |
Owner name: MEASUREMENT SPECIALTIES, INC., HAMPTON, US Free format text: FORMER OWNER: SILICON MICROSTRUCTURES, INC., MILPITAS, CALIF., US |