WO2012088823A1 - Procédé de formation pour capteur à système micro-électro-mécanique - Google Patents

Procédé de formation pour capteur à système micro-électro-mécanique Download PDF

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Publication number
WO2012088823A1
WO2012088823A1 PCT/CN2011/074292 CN2011074292W WO2012088823A1 WO 2012088823 A1 WO2012088823 A1 WO 2012088823A1 CN 2011074292 W CN2011074292 W CN 2011074292W WO 2012088823 A1 WO2012088823 A1 WO 2012088823A1
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Prior art keywords
dielectric layer
forming
sacrificial layer
groove
interlayer dielectric
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PCT/CN2011/074292
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English (en)
Chinese (zh)
Inventor
毛剑宏
唐德明
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上海丽恒光微电子科技有限公司
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Publication of WO2012088823A1 publication Critical patent/WO2012088823A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00865—Multistep processes for the separation of wafers into individual elements
    • B81C1/00888—Multistep processes involving only mechanical separation, e.g. grooving followed by cleaving

Definitions

  • the present invention relates to the field of semiconductor manufacturing, and in particular to a method of forming a microelectromechanical sensor.
  • MEMS Microelectromechanical System
  • MEMS Microelectromechanical System
  • MEMS Microelectromechanical System
  • MEMS is a micro system that integrates mechanical components, optical systems, drive components, and electronic control systems into one integral unit.
  • MEMS are commonly used in position sensors, rotating devices or sensors such as accelerometers, gyroscopes and sound sensors.
  • a conventional prior art electromechanical sensor typically includes a body and one or more movable members that are suspended discrete structures relative to the body, the movable members being suspended from the cantilever.
  • the gas layer between the movable member, the main body, and the movable member and the main body constitutes a capacitance.
  • the movable member and the main body are relatively movable, and when the movable member and the main body are relatively moved, for example, moving up and down or moving left and right, the capacitance value of the capacitor is changed, so that the continuous measurement of the capacitance value can obtain the The speed or acceleration of the movable member and the body moving relative to the left or right or moving up and down.
  • microelectromechanical sensor for measuring the relative motion between the movable member and the body by measuring the capacitance value is also called a capacitive helium electromechanical sensor. More information on existing MEMS sensors can be found in the US patent document "US2010116057A1".
  • the prior art first forms a number of MEMS sensors on the same substrate, the MEMS sensor comprising a MEMS sensor region and a pad region adjacent to the MEMS sensor region; sensor.
  • the problem solved by the present invention is to provide a method for forming a microelectromechanical sensor, which reduces the complexity of the fabrication process of the microelectromechanical sensor.
  • the present invention provides a method for forming a microelectromechanical sensor, the microelectromechanical sensor including a microelectromechanical sensing region and a pad region adjacent thereto, including:
  • a dielectric layer on the substrate wherein a first cavity and a second cavity are formed in the dielectric layer, the first cavity exposing a surface of the microelectromechanical sensing electrode, in the first cavity Forming a movable member, the second cavity exposing the surface of the pad electrode;
  • the adjacent £ electromechanical sensor is diced and separated, the cutting opening extending through at least the second cavity until the pad electrode is exposed, separating the adjacent MEMS sensor.
  • the microelectromechanical sensing electrode comprises a top electrode and a bottom electrode of the microelectromechanical sensor.
  • the first cavity includes a first groove and a third groove penetrating the first groove
  • the second cavity includes a second groove and a fourth recess penetrating the second groove groove.
  • the dielectric layer comprises a first dielectric layer, a second dielectric layer and a third dielectric layer which are sequentially located on the substrate.
  • first groove and the second groove are located in the first dielectric layer, and the third groove and the fourth groove are located in the second dielectric layer.
  • the depositing a dielectric layer includes forming a first interlayer dielectric layer on the substrate, and forming a first recess and a second recess in the first interlayer dielectric layer, the first A recess exposes the bottom electrode, and the second recess exposes the pad electrode.
  • first recess and the second recess are respectively filled with a first sacrificial layer and a second sacrificial layer.
  • the method further includes forming a first conductive plug in the first interlayer dielectric layer, and the first conductive plug is electrically connected to the top electrode.
  • the method further includes forming a movable component on the first interlayer dielectric layer, the movable component being connected to the top electrode through a first conductive plug, wherein one end of the movable component is covered with the first sacrificial layer .
  • the movable component has a thickness ranging from 0.1 to 50 micrometers, and the movable component has a width ranging from 10 to 1000 micrometers.
  • a second interlayer dielectric layer is formed on the first interlayer dielectric layer, and the second interlayer dielectric layer covers the movable component.
  • a third groove and a fourth groove are formed in the second interlayer dielectric layer, wherein the first groove and the third groove penetrate, the second groove and the fourth concave The groove is penetrated, and the third groove and the fourth groove are respectively filled with the third sacrificial layer and the fourth sacrificial layer.
  • a third interlayer dielectric layer is formed on the second interlayer dielectric layer, and a first opening and a second opening are formed in the third interlayer dielectric layer, the first opening is exposed The third sacrificial layer, the second opening exposing the third sacrificial layer.
  • the method further includes: introducing the etching gas through the first opening and the second opening, removing the first sacrificial layer, the second sacrificial layer, the third sacrificial layer, and the fourth sacrificial layer, after removing the sacrificial layer,
  • the first groove and the third groove constitute a first cavity
  • the second groove and the fourth groove constitute a second cavity.
  • the method further includes forming a cover on the third interlayer dielectric layer, and forming a cutting opening by cutting the cover, the cutting opening extending at least through the cover and the second cavity until the pad electrode is exposed Finally, the adjacent £ electromechanical sensor is separated by the cutting opening.
  • the first sacrificial layer, the second sacrificial layer, the third sacrificial layer, and the fourth sacrificial layer are made of one of amorphous carbon, photoresist, polyimide, amorphous silicon, and molybdenum. .
  • the first sacrificial layer, the second sacrificial layer, the third sacrificial layer and the fourth sacrificial layer are processed by a plasma enhanced chemical vapor deposition process, and the reaction temperature is 350 to 450 degrees Celsius.
  • the method for removing the first sacrificial layer, the second sacrificial layer, and the third sacrificial layer is removed by plasma ashing using oxygen ions or nitrogen ions.
  • the material of the first interlayer dielectric layer, the second interlayer dielectric layer, and the third interlayer dielectric layer is silicon oxide, silicon oxynitride, silicon carbide, silicon nitride, or a combination thereof.
  • the top electrode, the bottom electrode and the pad electrode are made of metal and have a thickness ranging from 0.05 to 10 micrometers, and the metal is silver, aluminum, copper, titanium, platinum, gold, nickel, cobalt or a combination thereof. .
  • the first conductive plug is made of a metal, and the metal is one or more of tungsten, gold, silver, copper, aluminum, titanium, and nickel.
  • the present invention has the following advantages: by forming a second cavity on the pad region, the second cavity completely exposes the pad electrode, and when the MEMS sensor is subsequently cut, only It is necessary to make the cutting opening penetrate through the second cavity to perform separation, reduce the cutting difficulty of the MEMS sensor, and reduce the cutting cost of the MEMS sensor.
  • FIG. 1 is a flow chart showing a method of forming a microelectromechanical sensor according to an embodiment of the present invention
  • FIG. 2 to FIG. 15 are schematic cross-sectional views showing a method of forming a germanium electromechanical sensor according to an embodiment of the present invention.
  • the prior art cutting the adjacent microelectromechanical sensor specifically includes forming a cover on the MEMS sensor region and the pad region, and by cutting the cover until the exposed portion of the pad region is completely exposed Pad electrodes to separate adjacent MEMS sensors.
  • the inventors have found that the pad electrode of the pad region is covered with an insulating material, and the insulating material on the pad electrode must be completely removed by wet etching or dry etching to completely expose the solder.
  • the surface of the disk electrode, and due to the large thickness of the insulating material located above the pad electrode, increases the complexity of the cutting process.
  • the present invention provides a method for forming a microelectromechanical sensor, the microelectromechanical sensor including a microelectromechanical sensing region and a pad region adjacent thereto, and the forming method includes:
  • the substrate is formed with a plurality of MEMS sensor regions, and a pad region adjacent to each MEMS sensor region, wherein the surface of the MEMS sensing region is formed with a MEMS sensing electrode a pad electrode is formed on a surface of the pad region;
  • a dielectric layer on the substrate wherein a first cavity and a second cavity are formed in the dielectric layer, the first cavity exposing a surface of the microelectromechanical sensing electrode, in the first cavity Forming a movable member, the second cavity exposing the surface of the pad electrode;
  • the adjacent £ electromechanical sensor is diced and separated, the cutting opening extending through at least the second cavity until the pad electrode is exposed, separating the adjacent MEMS sensor.
  • the present invention forms a second cavity on the pad region, the second cavity completely exposing the pad electrode, and when the microelectromechanical sensor is subsequently cut, it is only necessary to make the cutting port penetrate the second cavity Separation can be performed, the cutting difficulty of the MEMS sensor is reduced, and the cutting cost of the MEMS sensor is reduced.
  • FIG. 1 is a schematic flow chart of a method for forming a microelectromechanical sensor according to an embodiment of the present invention, specifically, As shown in Figure 1, it includes:
  • step SI providing a substrate, the substrate is formed with a plurality of MEMS device regions, and a pad region adjacent to each MEMS sensor region, wherein the surface of the MEMS sensing region is formed with a micro-electromechanical transmission a sensing electrode, a surface of the pad region is formed with a pad electrode;
  • Step S2 forming a first interlayer dielectric layer on the substrate, the first interlayer dielectric layer is formed with a first groove and a second groove, the first groove exposing a bottom electrode, The second recess exposes the pad electrode, and the first recess and the second recess are also respectively filled with the first sacrificial layer and the second sacrificial layer, and the first inter-layer dielectric layer is further formed with the first a conductive plug, the first conductive plug being electrically connected to the top electrode;
  • Step S3 forming a movable member on the first interlayer dielectric layer, the movable member is connected to the top electrode through the first conductive plug, and one end of the movable member is covered with the first sacrificial layer;
  • Step S4 forming a second interlayer dielectric layer on the first interlayer dielectric layer, and the second interlayer dielectric layer covers the movable component;
  • Step S5 a third groove and a fourth groove are formed in the second interlayer dielectric layer, wherein the first groove and the third groove penetrate, the second groove and the fourth groove Throughout, and the third groove and the fourth groove are respectively filled with a third sacrificial layer and a fourth sacrificial layer;
  • Step S6 forming a third interlayer dielectric layer on the second interlayer dielectric layer, and forming a first opening and a second opening in the third interlayer dielectric layer, the first opening exposing a third sacrificial layer, the second opening exposing the third sacrificial layer;
  • Step S7 the etching gas is introduced through the first opening and the second opening, and the first sacrificial layer, the second sacrificial layer, the third sacrificial layer and the fourth sacrificial layer are removed, and after the sacrificial layer is removed, the first The groove and the third groove constitute a first cavity, and the second groove and the fourth groove constitute a second cavity;
  • Step S8 forming a cover on the third interlayer dielectric layer, and forming a cutting opening through the cover, the cutting opening at least penetrating the cover and the second cavity until the pad electrode is exposed, and finally passes The cutting port separates adjacent £ electromechanical sensors.
  • a substrate 100 is provided.
  • the substrate 100 of the present invention may be a semiconductor substrate such as silicon, germanium or gallium arsenide, or the substrate 100 may also be a glass substrate.
  • the substrate 100 is a semiconductor substrate. The following will be described by taking a substrate as a semiconductor substrate as an example.
  • micro-electromechanical devices are formed on the substrate on the substrate 100.
  • the sensor device region 1 each of the microelectromechanical sensor regions is also formed with a pad region 2 adjacent thereto.
  • This figure shows only one MEMS sensor area 1 and its adjacent pad area 2.
  • the pad region 2 is used to connect the MEMS sensor region 1 to an external device.
  • a control circuit (not shown) is formed in the substrate 100, and the control circuit is configured to provide a control signal to each device formed on the semiconductor substrate 100.
  • the control circuit may be formed in the semiconductor substrate and may be formed on the substrate Inside another semiconductor substrate.
  • the control circuit is formed in the semiconductor substrate 100 shown in Fig. 2, which saves chip area and is more suitable for a microdisplay system.
  • the substrate 100 is further formed with electrodes correspondingly connected to the control circuit, including a microelectromechanical sensing electrode located in the microelectromechanical sensor region 1, including a top electrode 120 and a bottom electrode.
  • the material of the pad electrode 110, the top electrode 120, and the bottom electrode 130 is metal.
  • the thickness ranges from 0.05 to 10 microns, and the metal is silver, aluminum, copper, titanium, platinum, gold, nickel, cobalt or a combination thereof.
  • a first interlayer dielectric layer 200 is formed on the substrate 100, and the first interlayer dielectric layer 200 covers the pad electrode 110, the top electrode 120 and the bottom electrode 130 on the substrate 100.
  • the material of the first interlayer dielectric layer 200 is silicon oxide, silicon oxynitride, silicon carbide, silicon nitride or a combination thereof.
  • the first interlayer dielectric layer 200 is patterned, and a first recess 210 and a second recess 220 are formed in the first interlayer dielectric layer 200.
  • the first recess 210 exposes the bottom electrode 130, and the first recess 210 may expose the bottom electrode 130 in whole or in part.
  • the second recess 220 exposes the pad electrode 110, and the second recess 220 may expose the pad electrode 110 in whole or in part.
  • a sacrificial layer is filled in the first recess 210 and the second recess 220 to form a first sacrificial layer 211 and a second sacrificial layer 221, respectively.
  • an interlayer dielectric layer is first formed, and then a recess is formed in the interlayer dielectric layer to fill the sacrificial layer.
  • a sacrificial layer may be formed first, and then a recess is formed in the sacrificial layer.
  • the groove forms an interlayer dielectric layer. Because the sacrificial layer is located at a large ratio and the filling difficulty is low, it is preferable to form an interlayer dielectric layer first, and then form a groove in the interlayer dielectric layer to fill Sacrifice layer.
  • the first sacrificial layer 211 and the second sacrificial layer 221 formed by filling are filled in a subsequent process.
  • the cavity formed over the bottom electrode 130 and the cavity above the pad electrode 110 are removed by an ashing process or other processes, wherein the cavity on the pad electrode 110 can be easily followed. A dicing process by which the pad electrode 110 is exposed.
  • the sacrificial layer is made of one of amorphous carbon, photoresist, polyimide, amorphous silicon, and molybdenum.
  • the sacrificial layer is made of amorphous carbon, which can be fabricated by a common chemical vapor deposition process in a CMOS process, and can be removed by a plasma ashing process in a CMOS process.
  • the first sacrificial layer 211 and the second sacrificial layer 221 may use a plasma enhanced chemical vapor deposition (PECVD) process, and the specific parameters are: a temperature range of 350 ° C to 450 ° C,
  • the reaction gases include: C3H6 and HE2.
  • first sacrificial layer 211 and the second sacrificial layer 221 are fabricated by a plasma enhanced chemical vapor deposition process, the first sacrificial layer 211 and the second sacrificial layer 221 may be redundant after deposition.
  • the first sacrificial layer 211 and the second sacrificial layer 221 cover the surface of the first interlayer dielectric layer 200, and a planarization process is required to remove excess sacrificial layer on the surface of the first interlayer dielectric layer 200.
  • the planarization process is a chemical mechanical polishing process.
  • the chemical mechanical polishing process is the same as the prior art, and is well known to those skilled in the art and will not be described in detail herein.
  • the first interlayer dielectric layer 200 is again patterned, an opening is formed in the interlayer dielectric layer 200, and the opening is metal-filled to form the first conductive plug 230.
  • the bottom of the first conductive plug 230 is electrically connected to the top electrode 120.
  • the material of the first conductive plug 230 is metal, and the metal is one or more of tungsten, gold, silver, copper, aluminum, titanium, and nickel.
  • a movable member layer 300 of a ⁇ electromechanical sensor is formed on the first interlayer dielectric layer 200, and the material of the movable member layer 300 is metal gold, silver, copper, aluminum, titanium, or the like. It is preferably aluminum.
  • the movable component 300 may also be a conductive non-metal such as polysilicon, amorphous silicon, polysilicon, conductive glass, etc., or a combination of a metal and an insulating medium or a combination of a conductive non-metal and an insulating medium, wherein the insulating member 300
  • the medium may be SiO 2 , SiON, SiN x, SiC, SiOC or the like. Among them, in the case of a metal material, it can be formed by a chemical vapor deposition process.
  • the metal layer is etched to form a movable member 310, and the movable member 310 passes A first conductive plug 230 is coupled to the top electrode 130 and receives a control signal transmitted by a control circuit located within the substrate 100 through the top electrode 130.
  • the movable member 310 simultaneously covers a part of the surface of the first sacrificial layer 230.
  • the movable member 310 has a thickness ranging from 0.1 to 50 micrometers, and the movable member 310 has a width ranging from 10 to 1000 micrometers.
  • a second interlayer dielectric layer 400 is formed on the first interlayer dielectric layer 200, and the second interlayer dielectric layer 400 covers the movable member 310.
  • the material of the second interlayer dielectric layer 400 is silicon oxide, silicon oxynitride, silicon carbide, silicon nitride or a combination thereof.
  • the second interlayer dielectric layer 400 is patterned, and a third recess 410 and a fourth recess 420 are formed in the second interlayer dielectric layer 400, the first recess
  • the groove and the third groove 410 are penetrated, and the second groove and the fourth groove 420 are penetrated.
  • the movable component 310 is located in the third recess 410, and the dielectric layers of the top and sidewall of the movable component 310 are removed, only the bottom and second interlayer dielectric layer 200 or the first sacrificial layer 220 contact.
  • the sacrificial layer material is filled in the third recess 410 and the fourth recess 420 to form a third sacrificial layer 411 and a fourth sacrificial layer 421, respectively.
  • the third sacrificial layer 411 covers the movable member 310.
  • an interlayer dielectric layer is first formed, and then a recess is formed in the interlayer dielectric layer to fill the sacrificial layer.
  • a sacrificial layer may be formed first, and then a recess is formed in the sacrificial layer.
  • the groove forms an interlayer dielectric layer. Because the sacrificial layer is located at a large ratio and the filling difficulty is low, it is preferable to form an interlayer dielectric layer first, and then form a groove in the interlayer dielectric layer to fill Sacrifice layer.
  • the third sacrificial layer 411 and the fourth sacrificial layer 421 formed by the filling are removed by an ashing process or other processes in a subsequent process to form a cavity above the bottom electrode 130, and located in the pad.
  • the sacrificial layer is made of one of amorphous carbon, photoresist, polyimide, amorphous silicon, and molybdenum.
  • the sacrificial layer is made of amorphous carbon, which can be fabricated by a common chemical vapor deposition process in a CMOS process, and can be removed by a plasma ashing process in a CMOS process.
  • the third sacrificial layer 411 and the fourth sacrificial layer 421 may utilize a plasma enhanced chemical vapor deposition (PECVD) process, specifically the temperature range is: 350 ° C ⁇ 450 ° C, the reaction gases include: C3H6 and HE2.
  • PECVD plasma enhanced chemical vapor deposition
  • the third sacrificial layer 411 and the fourth sacrificial layer 421 are fabricated by a plasma enhanced chemical vapor deposition process, the third sacrificial layer 411 and the fourth sacrificial layer 421 may be redundant after deposition.
  • the third sacrificial layer 411 and the fourth sacrificial layer 421 cover the surface of the second interlayer dielectric layer 400, and a planarization process is required to remove excess sacrificial layer on the surface of the second interlayer dielectric layer 400 to form
  • the flat surface facilitates the subsequent process steps.
  • the flat chemical process is a chemical mechanical polishing process.
  • the chemical mechanical polishing process is the same as the prior art, and is well known to those skilled in the art and will not be described in detail herein.
  • a third interlayer dielectric layer 500 is formed on the second interlayer dielectric layer 200, and the third interlayer dielectric layer 500 has a thickness ranging from 0.1 ⁇ m to 10 ⁇ m.
  • the third interlayer dielectric layer 500 is patterned to form a first opening 510 and a second opening 520.
  • the material of the third interlayer dielectric layer 500 is silicon oxide, silicon oxynitride, silicon carbide, silicon nitride or a combination thereof.
  • the first sacrificial layer 211, the second sacrificial layer 221, the third sacrificial layer 411, and the fourth sacrificial layer 421 are removed by the etching gas passing through the first opening 510 and the second opening 520.
  • the first groove 211, the second groove 221, the third groove 411, and the fourth groove 421 are exposed.
  • the cavity above the bottom electrode 130 is a first cavity
  • the first cavity is a first groove 211 and a third groove 411 penetrating therethrough
  • a cavity above the pad electrode 110 is
  • the second cavity is a second groove 221 and a fourth groove 420 therethrough.
  • the etching of the sacrificial layer is an ashing process using a nitrogen-containing or oxygen-containing plasma.
  • the etching of the sacrificial layer includes an etching method of the first sacrificial layer 211, the second sacrificial layer 221, the third sacrificial layer 411, and the fourth sacrificial layer 421, including: the removing material is Oxygen, the generated plasma is oxygen ions, and the etching process has a temperature range of 150 ° C to 450 ° C. At this temperature, the dense amorphous carbon does not undergo intense combustion, but can be oxidized to carbon dioxide gas.
  • the first sacrificial layer 211, the second sacrificial layer 221, the third sacrificial layer 411, and the fourth sacrificial layer 421 can be completely removed, and the rest of the device is not affected.
  • a cover layer 600 is formed on the third interlayer dielectric layer 500, and the cover layer 600 has a thickness ranging from 1 micrometer to 500 micrometers, and the cover layer 600 is mainly used for covering and protecting the Microelectromechanical sensing area.
  • the cap layer formed on the pad region needs to be removed in a subsequent process.
  • a cutting opening is formed on the cover layer 600, and adjacent ⁇ electromechanical sensors are separated by the cutting opening, wherein the cutting opening penetrates at least the covering layer and the first The two cavities are exposed until the surface of the pad electrode 110 is exposed.
  • the cutting as shown in Fig. 15 can also start from the bottom of the substrate 100 until the second cavity is exposed, so that the microelectromechanical sensor and the microelectromechanical sensor adjacent thereto are separated.
  • the present invention forms a second cavity on the pad region, the second cavity completely exposes the pad electrode, and when the MEMS sensor is subsequently cut, it is only necessary to make the cutting port penetrate the cover and the first
  • the two cavities can be separated, and the wet etching or dry etching is not required to remove the insulating material located on the pad region, the cutting difficulty of the micro electromechanical sensor is reduced, and the micro electromechanical sensor is reduced. Cutting costs.

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Abstract

L'invention porte sur un procédé de formation pour un capteur à système micro-électro-mécanique (MEMS). Le procédé consiste à : fournir un substrat, sur lequel sont formées quelques régions de capteur à système micro-électro-mécanique et quelques zones adjacentes à chaque région de capteur à système micro-électro-mécanique, la surface des régions de capteur à système micro-électro-mécanique étant pourvue des électrodes de capteur à système micro-électro-mécanique, et la surface des zones étant pourvue des électrodes de zone (S1); déposer une couche diélectrique sur le substrat, une première cavité et une seconde cavité étant formées dans la couche diélectrique, la première cavité exposant la surface des électrodes de capteur à système micro-électro-mécanique, et une partie mobile qui est formée dans la première cavité et la seconde cavité exposant la surface des électrodes de zone (S2); découper des régions de capteur à système micro-électro-mécanique adjacentes afin de les séparer, l'encoche pénétrant au moins à travers la seconde cavité de façon à exposer les électrodes de zone et à séparer les capteurs à système micro-électro-mécanique adjacents (S3). Seule l'encoche est nécessaire pour effectuer une rupture à travers la seconde cavité, laquelle peut séparer les régions de capteur à système micro-électro-mécanique, de telle sorte que la difficulté de découpe du capteur à système micro-électro-mécanique est réduite.
PCT/CN2011/074292 2010-12-31 2011-05-19 Procédé de formation pour capteur à système micro-électro-mécanique WO2012088823A1 (fr)

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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104678125B (zh) * 2013-11-27 2019-07-02 中芯国际集成电路制造(上海)有限公司 Mems加速度传感器的形成方法
CN104795311B (zh) * 2014-01-21 2018-06-01 中芯国际集成电路制造(上海)有限公司 半导体器件的形成方法
CN105084298B (zh) * 2014-05-07 2019-01-18 中芯国际集成电路制造(上海)有限公司 一种半导体器件的制作方法
CN108846318B (zh) * 2018-05-24 2021-08-31 业泓科技(成都)有限公司 超声波指纹识别装置及其制作方法以及应用其的电子装置
CN112115759A (zh) * 2020-04-07 2020-12-22 中芯集成电路（宁波）有限公司 指纹识别模组及其形成方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080007814A1 (en) * 2006-07-10 2008-01-10 Samsung Electronics Co., Ltd. MEMS structure and method of fabricating the same
JP2008241482A (ja) * 2007-03-27 2008-10-09 Matsushita Electric Works Ltd センサ装置
CN101811657A (zh) * 2009-02-20 2010-08-25 原相科技股份有限公司 微机电传感器与制作方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003257895A (ja) * 2002-02-28 2003-09-12 Mitsubishi Electric Corp 半導体チップを搭載したウェハおよびその製造方法
TWI227050B (en) * 2002-10-11 2005-01-21 Sanyo Electric Co Semiconductor device and method for manufacturing the same
JP4451335B2 (ja) * 2005-03-16 2010-04-14 株式会社リコー 半導体装置の製造方法
JP4939452B2 (ja) * 2008-02-07 2012-05-23 ラピスセミコンダクタ株式会社 半導体装置の製造方法
JP2010287592A (ja) * 2009-06-09 2010-12-24 Renesas Electronics Corp 半導体装置、半導体ウェハおよびその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080007814A1 (en) * 2006-07-10 2008-01-10 Samsung Electronics Co., Ltd. MEMS structure and method of fabricating the same
JP2008241482A (ja) * 2007-03-27 2008-10-09 Matsushita Electric Works Ltd センサ装置
CN101811657A (zh) * 2009-02-20 2010-08-25 原相科技股份有限公司 微机电传感器与制作方法

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