WO2012088755A1 - 含有机酸的硅和铜化学机械平坦化浆料 - Google Patents
含有机酸的硅和铜化学机械平坦化浆料 Download PDFInfo
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- WO2012088755A1 WO2012088755A1 PCT/CN2011/002133 CN2011002133W WO2012088755A1 WO 2012088755 A1 WO2012088755 A1 WO 2012088755A1 CN 2011002133 W CN2011002133 W CN 2011002133W WO 2012088755 A1 WO2012088755 A1 WO 2012088755A1
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- Prior art keywords
- chemical mechanical
- organic acid
- copper
- acid
- silicon
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- 239000000126 substance Substances 0.000 title claims abstract description 77
- 239000010949 copper Substances 0.000 title claims abstract description 61
- 239000002002 slurry Substances 0.000 title claims abstract description 61
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 56
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 56
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 55
- 239000010703 silicon Substances 0.000 title claims abstract description 55
- 150000007524 organic acids Chemical class 0.000 title claims abstract description 39
- 238000005498 polishing Methods 0.000 claims abstract description 64
- 239000002245 particle Substances 0.000 claims abstract description 25
- 239000007800 oxidant agent Substances 0.000 claims abstract description 15
- 230000007797 corrosion Effects 0.000 claims abstract description 12
- 238000005260 corrosion Methods 0.000 claims abstract description 12
- 239000000203 mixture Substances 0.000 claims abstract description 10
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 8
- 239000003112 inhibitor Substances 0.000 claims abstract description 6
- 239000003381 stabilizer Substances 0.000 claims abstract description 6
- 239000004094 surface-active agent Substances 0.000 claims abstract description 6
- 150000001413 amino acids Chemical class 0.000 claims abstract description 4
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims abstract description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 15
- 239000003607 modifier Substances 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 239000003002 pH adjusting agent Substances 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 4
- 230000000844 anti-bacterial effect Effects 0.000 claims description 4
- 239000003899 bactericide agent Substances 0.000 claims description 4
- 229910052736 halogen Inorganic materials 0.000 claims description 4
- 150000002367 halogens Chemical class 0.000 claims description 4
- 229910017604 nitric acid Inorganic materials 0.000 claims description 4
- 150000003839 salts Chemical class 0.000 claims description 4
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical group O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 239000000758 substrate Substances 0.000 abstract description 10
- 230000001590 oxidative effect Effects 0.000 abstract description 6
- 239000007769 metal material Substances 0.000 abstract description 5
- 239000000356 contaminant Substances 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 4
- 230000007547 defect Effects 0.000 abstract description 3
- 230000001105 regulatory effect Effects 0.000 abstract 2
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 49
- 239000002253 acid Substances 0.000 description 13
- 238000005516 engineering process Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 10
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 8
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 4
- XWNSFEAWWGGSKJ-UHFFFAOYSA-N 4-acetyl-4-methylheptanedinitrile Chemical compound N#CCCC(C)(C(=O)C)CCC#N XWNSFEAWWGGSKJ-UHFFFAOYSA-N 0.000 description 4
- 239000004471 Glycine Substances 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 4
- 239000004153 Potassium bromate Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- BEOODBYKENEKIC-UHFFFAOYSA-N azanium;bromate Chemical compound [NH4+].[O-]Br(=O)=O BEOODBYKENEKIC-UHFFFAOYSA-N 0.000 description 4
- -1 polyethylene Polymers 0.000 description 4
- 229940094037 potassium bromate Drugs 0.000 description 4
- 235000019396 potassium bromate Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- VKJKEPKFPUWCAS-UHFFFAOYSA-M potassium chlorate Chemical compound [K+].[O-]Cl(=O)=O VKJKEPKFPUWCAS-UHFFFAOYSA-M 0.000 description 3
- JLKDVMWYMMLWTI-UHFFFAOYSA-M potassium iodate Chemical compound [K+].[O-]I(=O)=O JLKDVMWYMMLWTI-UHFFFAOYSA-M 0.000 description 3
- 239000001230 potassium iodate Substances 0.000 description 3
- 235000006666 potassium iodate Nutrition 0.000 description 3
- 229940093930 potassium iodate Drugs 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- SXDBWCPKPHAZSM-UHFFFAOYSA-N bromic acid Chemical compound OBr(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-N 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 229940098779 methanesulfonic acid Drugs 0.000 description 2
- 238000010979 pH adjustment Methods 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- 229960003975 potassium Drugs 0.000 description 2
- 229940046063 potassium chlorate Drugs 0.000 description 2
- SATVIFGJTRRDQU-UHFFFAOYSA-N potassium hypochlorite Chemical compound [K+].Cl[O-] SATVIFGJTRRDQU-UHFFFAOYSA-N 0.000 description 2
- ORQYPOUSZINNCB-UHFFFAOYSA-N potassium;hypobromite Chemical compound [K+].Br[O-] ORQYPOUSZINNCB-UHFFFAOYSA-N 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 2
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 2
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 description 2
- LMHAGAHDHRQIMB-UHFFFAOYSA-N 1,2-dichloro-1,2,3,3,4,4-hexafluorocyclobutane Chemical compound FC1(F)C(F)(F)C(F)(Cl)C1(F)Cl LMHAGAHDHRQIMB-UHFFFAOYSA-N 0.000 description 1
- HMUNWXXNJPVALC-UHFFFAOYSA-N 1-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)C(CN1CC2=C(CC1)NN=N2)=O HMUNWXXNJPVALC-UHFFFAOYSA-N 0.000 description 1
- GYSCBCSGKXNZRH-UHFFFAOYSA-N 1-benzothiophene-2-carboxamide Chemical compound C1=CC=C2SC(C(=O)N)=CC2=C1 GYSCBCSGKXNZRH-UHFFFAOYSA-N 0.000 description 1
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 1
- SXAMGRAIZSSWIH-UHFFFAOYSA-N 2-[3-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]-1,2,4-oxadiazol-5-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C1=NOC(=N1)CC(=O)N1CC2=C(CC1)NN=N2 SXAMGRAIZSSWIH-UHFFFAOYSA-N 0.000 description 1
- XXZCIYUJYUESMD-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]-3-(morpholin-4-ylmethyl)pyrazol-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C=1C(=NN(C=1)CC(=O)N1CC2=C(CC1)NN=N2)CN1CCOCC1 XXZCIYUJYUESMD-UHFFFAOYSA-N 0.000 description 1
- WWSJZGAPAVMETJ-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]-3-ethoxypyrazol-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C=1C(=NN(C=1)CC(=O)N1CC2=C(CC1)NN=N2)OCC WWSJZGAPAVMETJ-UHFFFAOYSA-N 0.000 description 1
- FYELSNVLZVIGTI-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]-5-ethylpyrazol-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C=1C=NN(C=1CC)CC(=O)N1CC2=C(CC1)NN=N2 FYELSNVLZVIGTI-UHFFFAOYSA-N 0.000 description 1
- WZFUQSJFWNHZHM-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)CC(=O)N1CC2=C(CC1)NN=N2 WZFUQSJFWNHZHM-UHFFFAOYSA-N 0.000 description 1
- ZRPAUEVGEGEPFQ-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]pyrazol-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C=1C=NN(C=1)CC(=O)N1CC2=C(CC1)NN=N2 ZRPAUEVGEGEPFQ-UHFFFAOYSA-N 0.000 description 1
- YJLUBHOZZTYQIP-UHFFFAOYSA-N 2-[5-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]-1,3,4-oxadiazol-2-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C1=NN=C(O1)CC(=O)N1CC2=C(CC1)NN=N2 YJLUBHOZZTYQIP-UHFFFAOYSA-N 0.000 description 1
- CONKBQPVFMXDOV-QHCPKHFHSA-N 6-[(5S)-5-[[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]methyl]-2-oxo-1,3-oxazolidin-3-yl]-3H-1,3-benzoxazol-2-one Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)C[C@H]1CN(C(O1)=O)C1=CC2=C(NC(O2)=O)C=C1 CONKBQPVFMXDOV-QHCPKHFHSA-N 0.000 description 1
- 229940122361 Bisphosphonate Drugs 0.000 description 1
- GHVNFZFCNZKVNT-UHFFFAOYSA-N Decanoic acid Natural products CCCCCCCCCC(O)=O GHVNFZFCNZKVNT-UHFFFAOYSA-N 0.000 description 1
- IMROMDMJAWUWLK-UHFFFAOYSA-N Ethenol Chemical group OC=C IMROMDMJAWUWLK-UHFFFAOYSA-N 0.000 description 1
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- DDAQLPYLBPPPRV-UHFFFAOYSA-N [4-(hydroxymethyl)-2-oxo-1,3,2lambda5-dioxaphosphetan-2-yl] dihydrogen phosphate Chemical compound OCC1OP(=O)(OP(O)(O)=O)O1 DDAQLPYLBPPPRV-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000004663 bisphosphonates Chemical class 0.000 description 1
- 239000007853 buffer solution Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229940090960 diethylenetriamine pentamethylene phosphonic acid Drugs 0.000 description 1
- XQRLCLUYWUNEEH-UHFFFAOYSA-N diphosphonic acid Chemical compound OP(=O)OP(O)=O XQRLCLUYWUNEEH-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- DUYCTCQXNHFCSJ-UHFFFAOYSA-N dtpmp Chemical compound OP(=O)(O)CN(CP(O)(O)=O)CCN(CP(O)(=O)O)CCN(CP(O)(O)=O)CP(O)(O)=O DUYCTCQXNHFCSJ-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- CCIVGXIOQKPBKL-UHFFFAOYSA-N ethanesulfonic acid Chemical compound CCS(O)(=O)=O CCIVGXIOQKPBKL-UHFFFAOYSA-N 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000417 fungicide Substances 0.000 description 1
- 125000003630 glycyl group Chemical group [H]N([H])C([H])([H])C(*)=O 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000012669 liquid formulation Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- LLYCMZGLHLKPPU-UHFFFAOYSA-N perbromic acid Chemical compound OBr(=O)(=O)=O LLYCMZGLHLKPPU-UHFFFAOYSA-N 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000005518 polymer electrolyte Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- LRBQNJMCXXYXIU-YIILYMKVSA-N tannic acid Chemical compound OC1=C(O)C(O)=CC(C(=O)OC=2C(=C(O)C=C(C=2)C(=O)OC[C@@H]2[C@H]([C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)C(OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)O2)OC(=O)C=2C=C(OC(=O)C=3C=C(O)C(O)=C(O)C=3)C(O)=C(O)C=2)O)=C1 LRBQNJMCXXYXIU-YIILYMKVSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Definitions
- the present invention relates to a chemical mechanical planarization paste, and more particularly to a chemical mechanical planarization slurry for high speed polishing of silicon and copper.
- CMP chemical mechanical polishing
- Cu wiring In the field of IC manufacturing, very large scale integrated wiring materials are being converted from conventional AI to Cu. Compared with AI, Cu wiring has the advantages of low resistivity, high electromigration resistance, and short RC delay time, which can reduce the number of layers by half, reduce cost by 30%, and shorten processing time by 40%. The advantages of Cu wiring have attracted worldwide attention. However, there is currently no technology for effective plasma etching or wet etching of copper to fully form copper interconnects in integrated circuits, so the chemical mechanical polishing method of copper is considered to be the most effective alternative.
- CMP is widely used in the field of IC manufacturing.
- the object of polishing includes substrate, dielectric and interconnect materials.
- the surface of the silicon wafer is formed into an irregular shape.
- the silicon needs to be planarized, and the chemical mechanical polishing can simultaneously planarize the multilayer wiring, substrate, and dielectric with a polishing pad.
- CMP is also critical for 3D package TSV (TSV, Through-Silicon-Via via) technology.
- TSV Through-Silicon-Via via
- the 3D package TSV is implemented by making vertical conduction between the chip and the chip, between the wafer and the wafer. The latest technology for inter-interconnect.
- TSV Unlike previous IC package bonding and bump overlay technology, TSV enables the chip to be stacked in the three-dimensional direction with the highest density and smallest form factor, greatly improving chip speed and low power consumption. It is also known as the fourth generation of packaging technology after wire bonding (Wire Bonding), TAB and flip chip (FC).
- Wire Bonding wire bonding
- TAB flip chip
- the main advantages of 3D packaging are: Minimal size and weight, integrating different kinds of technologies into a single package, replacing long 2D interconnects with short vertical interconnects, reducing parasitics and power consumption.
- US 2002/0151252 A1 discloses a composition and method for silicon CMP which can selectively select metals and silicon on silicon surfaces. Polishing; Patent US 2006/0014390 A1 discloses a chemical mechanical polishing slurry for silicon and metal, the chemical mechanical polishing slurry having the characteristics of selective polishing; and US Pat. No. 5,860,848 discloses a silicon CMP using a polymer electrolyte.
- the method disclosed in CN1459480A discloses a copper chemical-mechanical polishing process polishing solution, a film forming agent composed of a buffer solution, and a film forming aid and an abrasive to realize a chemical mechanical polishing process;
- the patent number CN1195896C discloses a CMP slurry manufacturing process for copper and a fabrication method for an integrated circuit that reduces pitting, corrosion, and good copper interconnect planarity of the copper layer.
- the invention relates to an organic acid-containing silicon and copper chemical mechanical planarization slurry, comprising abrasive particles, an oxidizing agent, an acid polishing rate modifier and a carrier; the acid polishing rate adjusting agent is capable of reacting with silicon and a copper surface to form a soluble solution.
- the acid of the compound of the carrier comprising abrasive particles, an oxidizing agent, an acid polishing rate modifier and a carrier; the acid polishing rate adjusting agent is capable of reacting with silicon and a copper surface to form a soluble solution.
- the above-described organic acid-containing silicon and copper chemical mechanical planarizing slurry wherein the abrasive particles are a mixture of one or more of silicon oxide, aluminum oxide, cerium oxide, and polymer particles.
- organic acid-containing silicon and copper chemical mechanical planarizing slurry wherein the oxidizing agent is a mixture of one or more of a halogen oxyacid or a soluble salt of the oxyacid.
- a halogen oxyacid or a soluble salt of the oxyacid.
- periodic acid high bromic acid, perchloric acid, potassium iodate, potassium bromate, potassium chlorate, potassium hypoiodate, potassium hypobromite, potassium hypochlorite, ammonium bromate and the like.
- the above-mentioned organic acid-containing silicon and copper chemical mechanical planarizing slurry wherein the oxidizing agent has a mass percentage of 0.1 to 10% in the chemical mechanical planarizing slurry.
- the above-mentioned organic acid-containing silicon and copper chemical mechanical planarization slurry wherein the pH adjuster is a basic substance or nitric acid, and the basic substance such as tetramethylammonium hydroxide or tetraethylammonium hydroxide , tetrapropylammonium hydroxide, ammonia water, potassium hydroxide, ethanolamine, triethanolamine, and the like.
- the pH adjuster is a basic substance or nitric acid
- the basic substance such as tetramethylammonium hydroxide or tetraethylammonium hydroxide , tetrapropylammonium hydroxide, ammonia water, potassium hydroxide, ethanolamine, triethanolamine, and the like.
- the above-described organic acid-containing silicon and copper chemical mechanical planarization slurry, wherein the chemical mechanically flat slurry may further include a surfactant, a stabilizer, a corrosion inhibitor, and a bactericide.
- the organic acid-containing silicon and copper chemical mechanical planarizing paste of the present invention simultaneously polishes silicon and copper at high speed by a polishing system.
- the organic acid-containing silicon and copper chemical mechanical planarization slurry of the present invention simultaneously controls local and overall corrosion of metal materials, reduces surface and substrate surface contaminants, and improves product yield.
- the organic acid-containing silicon and copper chemical mechanical planarization paste of the present invention can adjust the copper/silicon selectivity ratio to meet the TSV polishing requirements of different processes. Summary of the invention
- the organic acid-containing silicon and copper chemical mechanical planarization pastes disclosed herein comprise one or more acid polishing rate modifiers.
- the rate modifier may be an organic acid, an amino acid, an organic decanoic acid, an organic sulfonic acid or the like which reacts with silicon and a copper surface to form a compound which is soluble in a carrier, such as methanesulfonic acid, ethylsulfonic acid, aminotrimethylenephosphine.
- the organic acid-containing silicon and copper are composed of the above-mentioned acid polishing rate modifier and abrasive particles, an oxidizing agent (or a pH adjusting agent, a surfactant, a stabilizer, a corrosion inhibitor, a bactericide, etc.)
- Chemical mechanical planarization of the slurry can improve the polishing rate of metal (copper), while increasing the polishing rate of silicon; controlling local and overall corrosion of metal materials, reducing surface and substrate surface contaminants, improving product yield; / Silicon selection ratio, to meet the TSV polishing requirements of different processes.
- the organic acid-containing silicon and copper chemical mechanical planarization slurry of the present invention comprises:
- the acid polishing rate adjusting agent preferably has a mass percentage of 0.05 to 10% ;
- abrasive particles having a mass percentage of 0.05 to 10% and an average particle diameter of 20 to 200 nm, such as silica, alumina, cerium oxide, polymer particles (such as polyethylene, polytetrafluoroethylene);
- a halogen oxyacid or a soluble salt of the oxyacid as an oxidizing agent including periodic acid, perbromic acid, perchloric acid, potassium iodate, potassium bromate, potassium chlorate, potassium hypoiodate, potassium hypobromite, potassium hypochlorite , ammonium bromate, etc., the mass percentage of which is 0.1 to 10 ° /. ;
- It may also include a pH adjuster such as tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, ammonia water, potassium hydroxide, ethanolamine, triethanolamine, nitric acid (pH adjustment to 8.0) ⁇ 12.0) , as well as surfactants, stabilizers, corrosion inhibitors, fungicides, etc.
- a pH adjuster such as tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, ammonia water, potassium hydroxide, ethanolamine, triethanolamine, nitric acid (pH adjustment to 8.0) ⁇ 12.0) , as well as surfactants, stabilizers, corrosion inhibitors, fungicides, etc.
- the above components are mixed in a specific ratio, and a chemical reaction occurs between the various components, and the temperature of the polishing liquid
- the invention relates to an organic acid-containing silicon and copper chemical mechanical planarization slurry, the main components comprising 1.5wt% silica abrasive particles (average particle diameter 30nm), 5wt% rate modifier ethylenediaminetetraacetic acid, 5wt% oxidant potassium bromate , pH is adjusted to 10.5.
- Silica abrasive particles (average particle size 30nm) 2% by mass, rate modifier is glycine (3.5% by mass), oxidant is periodic acid (2.5% by mass), pH adjustment To 10.5.
- Silica abrasive particles (average particle size 30nm) mass percentage 2%, rate modifier citric acid (4% by mass), oxidant potassium bromate (2.5% by mass), pH adjusted to 10.5.
- the present invention contains an organic acid-containing silicon and copper chemical mechanical planarization paddle, and the rate modifier may also be another acid capable of reacting with silicon and copper surfaces to form a compound which is soluble in a carrier, an oxidizing agent. It may be other halogen oxyacids or soluble salts of the acid; Examples 4 to 19 The main components and contents are shown in Table 1.
- Table 1 shows the main components of the chemical mechanical planarization slurry of the present invention 1 to 19 and the comparative polishing liquid and the mass percentage thereof, and the components are uniformly mixed, and the deionized water is used to make up the mass percentage. 100%, finally use pH adjuster (20% KOH or dilute nitric acid, choose according to the pH value) Adjust to the desired pH value, continue to stir to a uniform fluid, let stand for 30 minutes to get each chemical mechanical flattening pulp material.
- Table 1 Chemical mechanical planarization slurry 1 ⁇ 19 and contrast liquid formulation of the present invention
- Example 1 1: 1 3 4796 No 5000 Example 2 1: 2 3 5800 No 10400 Example 3 1: 1 5 8000 No 8000 Example 4 1: 2 5 8000 No 15000 Example 5 1: 2 5 8000 No 18000 Example 6 1: 4 3 5000 No 20000 Example 7 1: 3 4 6000 No 20000 Example 8 1: 5 5 5000 No 25000 Example 9 1: 5 5 5000 No 25000 Example 10 1: 3 5 8000 No 24000 Example 11 1: 2 6 12000 No 25000 Example 12 1: 2.5 5 10000 No 25000 Example 13 1: 3 5 9000 No 27000 Example 14 1: 4 4 7000 No 28000 Example 15 1: 4 5 5000 No 21000 Example 16: 1: 3 5 9000 No 27000 Example 17 1: 5 5 5500 No 26000 Example 18 1: 2.5 4 8000 No 20000 Example 19 1: 1 3 12000 No I200G Comparative Example 1 3 8500 more than 100
- Table 1 and Table 2 indicate that: after adding a polishing rate modifier to the organic acid-containing silicon and copper chemical
- polishing rate modifier in the chemical mechanical planarization slurry of the present invention to achieve a polishing selection ratio of different materials to meet different processes. Polishing requirements for TSV. Further, in the polishing slurry of the above embodiment, a pH adjuster, a surfactant, a stabilizer, a corrosion inhibitor, a bactericide, and the like may be added to provide a better use effect.
- w% of the present invention refers to the mass percentage.
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Description
含有机酸的硅和铜化学机械平坦化浆料
技术领域
本发明涉及一种化学机械平坦化浆料, 尤其涉及一种用于高速抛光硅和 铜的化学机械平坦化浆料。 技术背景
随着微电子技术的发展,甚大规模集成电路芯片集成度已达几十亿个元 器件, 特征尺寸已经进入纳米级, 这就要求集成电路(IC)制造工艺中的几 百道工序, 尤其是多层布线、 衬底、 介质必须要经过化学机械平坦化。 IC制 造工艺中平坦化技术己成为与光刻和刻蚀同等重要、且相互依赖的不可缺少 的关键技术之一。而化学机械抛光(CMP)工艺便是目前最有效、 最成熟的 平坦化技术; 化学机械抛光系统是集清洗、 干燥、 在线检测、 终点检测等技 术与一体的平坦化技术, 是集成电路向微细化、 多层化、 平坦化、 薄型化发 展的产物,和集成电路提高生产效率、降低成本、晶圆全局平坦化必备技术。
在 IC制造领域中,甚大规模集成布线的材料正由传统的 AI向 Cu转化。 与 AI相比, Cu布线具有电阻率低, 抗电迁移能率高, RC延迟时间短, 可 使布层数减少一半, 成本降低 30%, 加工时间缩短 40%的优点。 Cu布线的 优势已经引起全世界广泛的关注。但是目前还没有对铜材进行有效地等离子 蚀刻或湿法蚀刻, 以使铜互连在集成电路中充分形成的技术, 因此铜的化学 机械抛光方法被认为是最有效的替代方法。
CMP在 IC制造领域应用广泛,抛光对象包括衬底、介质及互连材料等, 在 IC制造中, 由于多层布线, 使得硅片表面形成了不规则的形貌, 除去对
布线需要进行平坦化处理外, 对硅也需要进行平坦化处理, 而化学机械抛光 可以用抛光垫同时对多层布线、 衬底、 介质进行平坦化处理。 CMP对于 3D 封装 TSV (TSV, Through -Silicon-Via硅通孔) 技术也至关重要, 3D封装 TSV是通过在芯片和芯片之间、晶圆和晶圆之间制作垂直导通, 实现芯片之 间互连的最新技术。 与以往 IC封装键合和使用凸点的叠加技术不同, TSV 能够使芯片在三维方向堆叠的密度最大, 外形尺寸最小, 大大改善芯片速度 和低功耗的性能。 它也被称为继键合 (Wire Bonding)、 TAB和倒装芯片 (FC) 之后的第四代封装技术。 3D 封装的主要优势为: 具有最小的尺寸和重量, 将不同种类的技术集成到单个封装中, 用短的垂直互连代替长的 2D互连, 降低寄生效应和功耗等。
目前, 出现了一系列适合于抛光硅或铜的化学机械抛光浆料, 如: 专利 US2002/0151252A1公开了一种用于硅 CMP的组合物和方法, 能对硅表面 的金属及硅进行选择性抛光; 专利 US2006/0014390A1 公开了一种用于硅 和金属的化学机械抛光浆料, 该化学机械抛光浆料具有选择性抛光的特点; 专利 US 5860848公幵了一种使用聚合体电解质的硅 CMP的方法; 公开号 为 CN1459480A的专利公开了一种铜化学一机械抛光工艺用抛光液, 利用 缓冲溶液组成的成膜剂以及成膜助剂及磨料实现化学机械抛光工艺;授权公 告号为授权公告号为 CN1195896C的专利公开了一种用于铜的 CMP浆液制 造以及用于集成电路的制造方法, 使铜层的点蚀、腐蚀减少并获得良好的铜 互连平面性。
传统的铜抛光液使用过氧化氢为氧化剂,但是这种氧化剂会抑制硅的抛 光。 上述专利中提到的用于高速铜抛光的抛光液还存在去除速率不足的情
况, 或者衬底表面存在着缺陷、划伤、粘污和 /或其它残留, 或者是对铜的抛 光选择性不够, 或者是抛光过程中存在着局部或整体腐蚀等问题, 不适于现 在的电子产品的生产制造工艺流程的需要, 因此有必要开发出新的适用于高 速制程的化学机械抛光浆料。
发明概要
本发明的目的是提供一种含有机酸的、用于抛光硅和铜的化学机械平坦 化浆料, 所述化学机械平坦化浆料实现同时告诉抛光硅和铜, 并且能够控制 金属材料的局部和整体腐蚀, 减少衬底表面污染物。 本发明含有机酸的硅和铜化学机械平坦化浆料,包括研磨颗粒、氧化剂、 酸类抛光速率调节剂和载体;所述酸类抛光速率调节剂为能够与硅以及铜表 面反应形成易溶于所述载体的化合物的酸。
上述的含有机酸的硅和铜化学机械平坦化浆料, 其中, 所述研磨颗粒为 氧化硅、 氧化铝、 氧化铈、 聚合物颗粒中的一种或几种的混合。
上述的含有机酸的硅和铜化学机械平坦化浆料, 其中, 所述研磨颗粒在 所述化学机械平坦化浆料中的质量百分含量为 0.05〜10%。
上述的含有机酸的硅和铜化学机械平坦化浆料, 其中, 所述研磨颗粒的 平均粒径为 20~200nm, 并优选为 30~100nm。
上述的含有机酸的硅和铜化学机械平坦化浆料, 其中, 所述氧化剂为卤 素含氧酸或所述含氧酸的可溶盐中的一种或几种的混合。如高碘酸,高溴酸, 高氯酸, 碘酸钾, 溴酸钾, 氯酸钾, 次碘酸钾, 次溴酸钾, 次氯酸钾、 溴酸 铵等。
上述的含有机酸的硅和铜化学机械平坦化浆料, 其中, 所述氧化剂在所 述化学机械平坦化浆料中的质量百分含量为 0.1 ~10%。
上述的含有机酸的硅和铜化学机械平坦化浆料, 其中, 所述酸类抛光速 率调节剂为能够与硅以及铜表面反应形成易溶与载体的化合物的有机酸, 氨 基酸, 有机瞵酸, 有机磺酸中的一种或几种的混合。
上述的含有机酸的硅和铜化学机械平坦化浆料, 其中, 所述酸类抛光速 率调节剂在所述化学机械平坦化浆料中的质量百分含量为 0.05~10%。
上述的含有机酸硅和铜化学机械平坦化浆料, 其中, 所述化学机械平坦 化浆料还包括 pH值调节剂。
上述的含有机酸的硅和铜化学机械平坦化浆料, 其中, 所述 pH值调节 剂为碱性物质或硝酸, 所述碱性物质如四甲基氢氧化胺、 四乙基氢氧化胺、 四丙基氢氧化胺、 氨水、 氢氧化钾、 乙醇胺、 三乙醇胺等。
上述的含有机酸的硅和铜化学机械平坦化浆料, 其中, 所述化学机械平 坦化浆料 pH值为 8.0-12.0, 并优选为 9.0~11.0。
上述的含有机酸的硅和铜化学机械平坦化浆料, 其中, 所述化学机械平 坦化浆料还可以包括表面活性剂、 稳定剂、 腐蚀抑制剂和杀菌剂。
上述的含有机酸的硅和铜化学机械平坦化浆料, 其中, 所述载体为去离 子水。 采用本发明含有机酸的硅和铜化学机械平坦化浆料其优点在于:
1. 本发明的含有机酸的硅和铜化学机械平坦化浆料通过抛光体系的作 用同时高速抛光硅和铜。
2. 本发明的含有机酸的硅和铜化学机械平坦化浆料同时控制金属的材 料的局部和整体腐蚀, 减少机台和衬底表面污染物, 提高产品良率。
3. 本发明的含有机酸的硅和铜化学机械平坦化浆料可以调节铜 /硅选择 比, 满足不同制程对 TSV抛光要求。
发明内容
本发明所公开的含有机酸的硅和铜化学机械平坦化浆料,含有一种或多 种酸类抛光速率调节剂。该速率调节剂可以为与硅以及铜表面反应形成易溶 于载体的化合物的有机酸、 氨基酸、 有机瞵酸、 有机磺酸等, 如甲基磺酸、 乙基磺酸、 氨基三亚甲基膦酸、 2-羟基膦酰基乙酸、 乙二胺四甲基膦酸、 二 亚乙基三胺五亚甲基膦酸、 乙二胺四乙酸、 甘氨酸、 柠檬酸、 羟基亚乙基二 磷酸中的一种或几种混合。 实验证明, 在由上述酸类抛光速率调节剂以及研 磨颗粒、 氧化剂 (或加入 pH值调节剂、 表面活性剂、 稳定剂、 腐蚀抑制剂 和杀菌剂等)等成分组成的含有机酸硅和铜化学机械平坦化浆料可提高金属 (铜)抛光速率, 同时提高硅的抛光速率; 控制金属的材料的局部和整体腐 蚀, 减少机台和衬底表面污染物, 提高产品良率; 可以调节铜 /硅选择比, 满 足不同制程对 TSV抛光要求。
本发明的含有机酸的硅和铜化学机械平坦化浆料中, 包括:
1 ) 酸类抛光速率调节剂, 质量百分含量优选为 0.05~10%;
2) 质量百分含量为 0.05~10%, 平均粒径为 20~200nm的研磨颗粒, 如氧化硅、 氧化铝、 氧化铈、 聚合物颗粒 (如聚乙烯、 聚四氟乙烯) 等;
3) 卤素含氧酸或所述含氧酸的可溶盐作为氧化剂, 包括高碘酸, 高溴 酸, 高氯酸, 碘酸钾, 溴酸钾, 氯酸钾, 次碘酸钾, 次溴酸钾, 次氯酸钾、 溴酸铵等, 其质量百分比含量为 0.1~10°/。;
4) 还可以包括四甲基氢氧化胺、 四乙基氢氧化胺、 四丙基氢氧化胺、 氨水、 氢氧化钾、 乙醇胺、 三乙醇胺、 硝酸等 pH值调节剂 (将 pH值调节 至 8.0~12.0) , 以及表面活性剂、 稳定剂、 腐蚀抑制剂、 杀菌剂等。
使用前, 将上述成份按特定的比例混合, 各种成份间发生化学反应, 在 抛光过程中升高抛光液温度, 从而大幅提高抛光液效率。
下面通过实施例的方式进一步说明本发明, 并不因此将本发明限制在所 述的实施例范围之中。
实施例 1
本发明含有机酸的硅和铜化学机械平坦化浆料, 主要组分包括 1.5wt% 二氧化硅研磨颗粒(平均粒径 30nm)、5wt%速率调节剂乙二胺四乙酸、 5wt% 氧化剂溴酸钾, pH值调节至 10.5。
实施例 2
二氧化硅研磨颗粒 (平均粒径 30nm) 质量百分含量为 2%, 速率调节 剂为甘氨酸(质量百分含量 3.5%),氧化剂为高碘酸(质量百分含量 2.5%), pH值调节至 10.5。
实施例 3
二氧化硅研磨颗粒 (平均粒径 30nm) 质量百分含量为 2%, 速率调节 剂为柠檬酸 (质量百分含量 4%), 氧化剂为溴酸钾 (质量百分含量 2.5%), pH值调节至 10.5。
4-19,参照上述实施例,本发明含有机酸的硅和铜化学机械平坦化桨料, 速率调节剂还可以是能够与硅以及铜表面反应形成易溶于载体的化合物的 其它酸, 氧化剂可以是其他卤素含氧酸或所述酸的可溶性盐; 实施例 4~19 主要组分及含量详见表 1。
表 1给出了本发明化学机械平坦化浆料实施例 1~19和对比抛光液主要 组分及其质量百分含量, 将各组分混合均匀, 去离子水补足质量百分比
100%, 最后用 pH调节剂 (20%KOH或稀硝酸, 根据 pH值的需要进行选 择) 调节到所需 pH值, 继续搅拌至均匀流体, 静置 30分钟即可得到各化 学机械平坦化浆料。 表 1 本发明的化学机械平坦化浆料 1 ~19和对比液配方
14 SiO2(70nm) 4 甘氨酸 2 高氯酸 1.8 11
15 SiO2(60nm) 0.5 柠檬酸 0.1 高氯酸 2 11
16 SiO2(60nm) 0.8 讓 0.8 氯酸钾 5 12
Si02 羟基亚乙基
17 2 1 溴酸铵 3 10.5
(60nm) 二膦酸
Si02 羟基亚乙基
18 2 1 溴酸铵 4 10.5
(80nm) 二膦酸
羟基亚乙基
Si02 1
19 10 二膦酸 碘酸钾 4 10.5
(60nm)
甲基磺酸 1
对比例 Si02 3.5 柠檬酸 3.3 过氧化氢 5 3 将表 1中本发明的抛光液 1~19和对比例抛光浆料分别对不同材料 (包 括硅衬底、 Cu 衬底) 进行抛光。 抛光条件相同, 抛光参数如下: Logitech 抛光垫,向下压力 3~5psi,转盘转速 /抛光头转速 =60/80rpm,抛光时间 120s, 含有机酸硅和铜化学机械平坦化浆料流速 100mL/min。 抛光结果见表 2。
表 2 本发明实施例 1~3和对比例的抛光效果对比 铜去除速率
抛光液 选择比 Cu/Si 下压力 (psi) 表面缺陷 硅去除速率 (A/min)
(A/min) 实施例 1 1: 1 3 4796 无 5000 实施例 2 1: 2 3 5800 无 10400 实施例 3 1: 1 5 8000 无 8000 实施例 4 1: 2 5 8000 无 15000 实施例 5 1: 2 5 8000 无 18000 实施例 6 1: 4 3 5000 无 20000 实施例 7 1: 3 4 6000 无 20000 实施例 8 1: 5 5 5000 无 25000 实施例 9 1: 5 5 5000 无 25000
实施例 10 1: 3 5 8000 无 24000 实施例 11 1: 2 6 12000 无 25000 实施例 12 1: 2.5 5 10000 无 25000 实施例 13 1: 3 5 9000 无 27000 实施例 14 1: 4 4 7000 无 28000 实施例 15 1: 4 5 5000 无 21000 实施例 16 1: 3 5 9000 无 27000 实施例 17 1: 5 5 5500 无 26000 实施例 18 1: 2.5 4 8000 无 20000 实施例 19 1: 1 3 12000 无 I200G 对比例 一 3 8500 多 100 表 1、 表 2中的数据表明: 本发明的含有机酸硅和铜化学机械平坦化浆 料中加入抛光速率调节剂后,在高速抛光硅和铜的同时可以调节化学机械抛 光时对铜及硅的抛光选择比并控制金属材料的局部或整体腐蚀效果。
在针对不同需要进行硅和铜的高速抛光时,只需调节本发明化学机械平 坦化浆料中的抛光速率调节剂的成分、质量百分比含量即能实现对不同材料 的抛光选择比以满足不同制程对 TSV抛光要求。 而且, 上述实施例抛光浆 料中, 还可以加入 pH值调节剂、 表面活性剂、 稳定剂、 腐蚀抑制剂和杀菌 剂等, 以起到更好的使用效果。
应当理解的是, 本发明所述 w %均指的是质量百分含量。
Claims
1. 一种含有机酸的硅和铜化学机械平坦化浆料,其特征在于 包括研磨 颗粒、氧化剂、有机酸类抛光速率调节剂和载体, 所述有机酸类抛光 速率调节剂为能够与硅和铜反应生成易溶于所述载体的化合物的有 机酸。
2. 根据权利要求 1所述的化学机械平坦化浆料,其特征在于,所述有机 酸类抛光速率调节剂为有机酸, 氨基酸, 有机瞵酸, 有机磺酸中的一 种或几种的混合。
3. 根据权利要求 1所述的化学机械平坦化浆料,其特征在于,所述有机 酸类抛光速率调节剂在所述化学机械平坦化浆料中的质量百分含量 为 0.05~10%。
4. 根据权利要求 1所述的化学机械平坦化浆料,其特征在于,所述研磨 颗粒为氧化硅、氧化铝、氧化铈、聚合物颗粒中的一种或几种的混合。
5. 根据权利要求 1所述的化学机械平坦化浆料,其特征在于,所述研磨 颗粒在所述化学机械平坦化浆料中的质量百分含量为 0.05〜10%。
6. 根据权利要求 1所述的化学机械平坦化浆料,其特征在于,所述研磨 颗粒的平均粒径为 20~200nm。
7. 根据权利要求 6所述的化学机械平坦化浆料,其特征在于,所述研磨 颗粒的平均粒径为 30~100nm。
8. 根据权利要求 1所述的化学机械平坦化浆料,其特征在于,所述氧化 剂为卤素含氧有机酸或所述含氧有机酸的可溶盐中的一种或几种的 混合。
9. 根据权利要求 1所述的化学机械平坦化浆料,其特征在于,所述氧化 剂在所述化学机械平坦化浆料中的质量 S"分含量为 0.1~10%。
10.根据权利要求 1所述的化学机械平坦化浆料,其特征在于,所述化学 机械平坦化浆料还包括 pH值调节剂。
11.根据权利要求 10所述的化学机械平坦化浆料,其特征在于,所述 pH 值调节剂为碱性物质或硝酸。
12.根据权利要求 1所述的化学机械平坦化桨料,其特征在于,所述化学 机械平坦化桨料 pH值为 8.0〜12.0。
13.根据权利要求 12所述的化学机械平坦化浆料.. 其特征在于, 所述化 学机械平坦化浆料 pH值为 9.0〜11.0。
14.根据权利要求 1所述的化学机械平坦化浆料,其特征在于,所述化学 机械平坦化浆料还包括表面活性剂、稳定剂、腐蚀抑制剂或杀菌剂中 的一种或多种的混合。
15.根据权利要求 1所述的化学机械平坦化浆料,其特征在于,所述载体 为去离子水。
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