WO2012073574A1 - フォトレジストの除去方法 - Google Patents

フォトレジストの除去方法 Download PDF

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Publication number
WO2012073574A1
WO2012073574A1 PCT/JP2011/070823 JP2011070823W WO2012073574A1 WO 2012073574 A1 WO2012073574 A1 WO 2012073574A1 JP 2011070823 W JP2011070823 W JP 2011070823W WO 2012073574 A1 WO2012073574 A1 WO 2012073574A1
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WO
WIPO (PCT)
Prior art keywords
ozone water
photoresist
ozone
supersaturated
water
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PCT/JP2011/070823
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English (en)
French (fr)
Japanese (ja)
Inventor
孝至 南朴木
教和 方志
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シャープ株式会社
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Filing date
Publication date
Application filed by シャープ株式会社 filed Critical シャープ株式会社
Priority to CN2011800356203A priority Critical patent/CN103003919A/zh
Priority to US13/813,573 priority patent/US20130233357A1/en
Priority to KR1020137001785A priority patent/KR20130020845A/ko
Publication of WO2012073574A1 publication Critical patent/WO2012073574A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels

Definitions

  • the present invention relates to a method for removing a photoresist used in a manufacturing process of a semiconductor device, a liquid crystal display or the like.
  • a photolithography method or an etching method is used as a method for processing a fine circuit pattern.
  • a mask is formed with a resist film on the surface of the object to be processed, and a circuit pattern is formed. Since the mask of the resist film itself needs to be finely processed, a photoresist such as an ultraviolet curable resin is used for the resist film. Since the photoresist mask becomes unnecessary after the circuit pattern is formed, it needs to be removed.
  • an acidic liquid such as a mixture of sulfuric acid and hydrogen peroxide, an alkaline liquid such as sodium hydroxide, or an organic solvent such as monoethanolamine (hereinafter abbreviated as a chemical) is used.
  • a chemical organic solvent such as monoethanolamine
  • Patent Document 1 A typical example of a combination of an ozone water production apparatus and a dedicated cleaning machine is described in Patent Document 1.
  • a cleaning tank dedicated to ozone water that employs a structure for increasing the flow rate of ozone water on the surface of a silicon wafer is combined with an ozone water production apparatus, which is necessary for practical use. Resist removal speed is secured.
  • An object of the present invention is to provide a method for removing a photoresist that can achieve a sufficient removal rate even if a general-purpose cleaning apparatus is used.
  • the present invention is a method for removing a photoresist characterized by performing a removal operation for removing the photoresist formed on the surface of the substrate using a supersaturated aqueous solution of ozone.
  • the removing operation is performed in a state where a decrease in ozone concentration of the supersaturated aqueous solution is suppressed.
  • the removing operation is an operation of immersing the substrate on which a photoresist is formed in an immersion tank storing the supersaturated aqueous solution
  • the immersion tank is constituted by a sealed container, and the substrate is immersed in a state where the pressure in the sealed container is higher than atmospheric pressure.
  • the removing operation is an operation of discharging the supersaturated aqueous solution from a nozzle and spraying the supersaturated aqueous solution onto a photoresist formed on the surface of the substrate.
  • the nozzle and the photoresist are brought close to each other, and the photoresist is sprayed onto the photoresist in a state where the pressure applied to the supersaturated aqueous solution is higher than the atmospheric pressure.
  • a removal operation is performed to remove the photoresist formed on the substrate surface using a supersaturated aqueous solution of ozone.
  • the removal rate can be further improved by performing the removal operation in a state where the decrease in ozone concentration of the supersaturated aqueous solution is suppressed.
  • the removing operation is an operation of immersing a substrate on which a photoresist is formed in an immersion tank storing the supersaturated aqueous solution, and the immersion tank is constituted by a sealed container, and the inside of the sealed container The substrate is immersed in a state where the pressure is higher than atmospheric pressure.
  • the removing operation is an operation of discharging the supersaturated aqueous solution from a nozzle and spraying the supersaturated aqueous solution onto the photoresist formed on the surface of the substrate, and the distance between the nozzle and the photoresist is increased. In close proximity, the photoresist is sprayed onto the photoresist in a state where the pressure applied to the supersaturated aqueous solution is higher than atmospheric pressure.
  • the present invention is a method for removing a photoresist, comprising performing a removal operation for removing the photoresist formed on the surface of the substrate using a supersaturated aqueous solution of ozone.
  • the substrate on which the photoresist is formed is not particularly limited, and is a member on which a mask made of a photoresist is formed by a photolithography method, an etching method, or the like, such as a silicon wafer or a glass substrate.
  • phenol novolak resin As a material used as a photoresist, phenol novolak resin is mainly used, and (meth) acrylic acid ester, norbornene derivative, and a polymer derived from them are also used.
  • the supersaturated aqueous solution of ozone is an aqueous solution in which the dissolved state of ozone is in a supersaturated state, and is an aqueous solution in which high-concentration ozone is dissolved beyond the saturation dissolution amount.
  • an aqueous solution having an ozone concentration equal to or lower than the saturated dissolution amount is generally referred to as ozone water
  • an aqueous solution that exceeds the saturation dissolution amount and is supersaturated is referred to as supersaturated ozone water.
  • Supersaturated ozone water should be completely separated from ozone water in terms of solution theory.
  • the ozone water used in the invention described in Patent Document 1 is usually ozone water.
  • the production method and production conditions of ozone water disclosed in Patent Document 1 are summarized as follows.
  • the ozone gas which is a solute is generated with an ozone gas generator having a concentration of about 230 g / Nm 3 , and then the generated ozone gas is concentrated with a concentrator to a concentration of about 800 g / Nm 3 .
  • the saturated dissolution concentration of heated ozone water shown in Patent Document 1 is calculated, the saturated dissolution concentration at 50 ° C. is 296 mg / L, and the concentration shown in Patent Document 1 is about 50 mg / L.
  • the heated ozone water is determined to be normal ozone water that is sufficiently lower than the saturated dissolution concentration.
  • [OH ⁇ ] is the concentration of hydroxide ions
  • T is the liquid temperature
  • the practical removal rate is 0.2 ⁇ m / min or more in a batch processing method such as immersion, and 1.0 ⁇ m / min or more in a single wafer processing method such as nozzle spraying.
  • a photoresist is removed using supersaturated ozone water, thereby realizing a sufficient removal rate using a general-purpose cleaning device.
  • the removal rate is proportional to the dissolved ozone concentration of the ozone water.
  • A is the frequency factor
  • E is the activation energy
  • R is the gas constant
  • T is the temperature.
  • high temperature is disadvantageous than low temperature, as is clear from equations (1) and (2). become. That is, since the saturation solubility becomes low when the water temperature is high, it is difficult to increase the concentration at a high temperature with normal ozone water.
  • ozone water having a high concentration can be used even at a high temperature, and both the characteristics of improving the removal rate of a high concentration at a high temperature are achieved.
  • FIG. 1 is a schematic diagram illustrating a configuration of an ozone water production apparatus 1 that produces supersaturated ozone water.
  • the ozone water production apparatus 1 includes an ozonizer (ozone production device) 2, a circulation tank 3, a circulation pump 4, and a heat exchange hot water tank 5, and includes CO 2 (carbon dioxide) gas, O 2 (oxygen) gas, N 2 (Nitrogen) Introducing piping from each supply source of gas and water, valves provided in each piping, flow meter and the like.
  • the ozone water production apparatus 1 does not include a mixer for mixing ozone gas and water, mixes them using the circulation pump 4, and dissolves ozone into the water.
  • the CO 2 gas is introduced into the bubbler 3 a of the circulation tank 3 and supplied to the ozone water stored in the circulation tank 3.
  • the ozone water is adjusted to a desired pH by supplying CO 2 gas to the ozone water.
  • the flow rate of the CO 2 gas is adjusted by opening and closing a valve V1 provided between the supply source and the bubbler 3a and the flow meter FR1.
  • the supply pressure is set to 0.31 to 0.40 MPa, and the flow rate is set to 100 to 1000 mL ⁇ min ⁇ 1 .
  • O 2 gas and N 2 gas are introduced into the ozonizer 2, and ozone is generated by the ozonizer 2.
  • the generated ozone is mixed with the supplied water and then introduced into the circulation pump 4.
  • a pipe from the ozonizer 2 is connected to a water pipe to the circulation pump 4 using a T-type union joint, and water and generated ozone gas are mixed.
  • the supply amount of O 2 gas is adjusted by opening and closing a valve V2 provided between the supply source and the ozonizer 2 and the flow meter FR2, and the supply amount of N 2 gas is between the supply source and the ozonizer 2
  • the flow rate is adjusted by opening and closing the valve V3 and the flow meter FR3.
  • the supply pressure is set to 0.31 to 0.40 MPa, and the flow rate is set to 1 to 10 L ⁇ min ⁇ 1 .
  • the supply pressure is 0.31 to 0.40 MPa
  • the flow rate is 10 to 100 mL ⁇ min ⁇ 1 .
  • the amount of water supplied is adjusted by opening and closing a valve V4 provided between the supply source and the circulation pump 4 and the flow meter FR4.
  • the premixed water and ozone gas are further mixed inside the circulation pump 4 to dissolve the ozone gas in water.
  • the ozone water is discharged to the circulation tank 3 by the circulation pump 4 and mixed with the CO 2 gas as described above.
  • the circulation pump 4 needs to have a mixing function, and it is preferable to use a constant displacement pump such as a bellows pump or a diaphragm pump.
  • a spiral pump or the like is used as the circulation pump 4
  • the circulation pump 4 preferably has a discharge capacity of about 0.5 to 5 L / cycle.
  • a part of the ozone water stored in the circulation tank 3 is returned to the water pipe, mixed with the generated ozone gas, and then introduced into the circulation pump 4.
  • the ozone water is discharged from the circulation tank 3, mixed with fresh water and ozone gas, introduced into the circulation pump 4, and circulated through a circulation line returning to the circulation tank 3.
  • the discharge amount from the circulation tank 3 is adjusted by opening and closing a valve V5 provided between the circulation tank 3 and the connection portion to the water pipe.
  • the circulation tank 3 always stores ozone water in an amount of 2 to 20 L (liter), and the amount of the circulating fluid is 4 times or more of the discharge flow rate (use amount) 1 to 10 L ⁇ min ⁇ 1 from the circulation tank 3, that is, It is preferably 4 to 40 L ⁇ min ⁇ 1 or more.
  • the ozone water discharged from the circulation tank 3 is introduced into the heat exchanger 5a provided in the hot water tank 5 and heated to a predetermined temperature.
  • Hot water as a heat exchange medium is stored in the hot water tank 5 and heated to an appropriate temperature by the heater 5b.
  • Direct heating of ozone water by a sheathed heater or the like is preferably heated by a heat exchanger because a large amount of heat energy is locally added and the excess heat energy decomposes ozone molecules in the ozone water into oxygen.
  • the heat exchanger 5a is preferably a heat transfer tube using, for example, PFA or titanium.
  • PFA is a copolymer of tetrafluoroethylene (TFE) and perfluoroalkoxyethylene.
  • the ozone water heated to a predetermined temperature by the heat exchanger 5a is supplied to a subsequent cleaning device or the like.
  • the volume of the circulation tank 3 is 5 to 50 L, and the pressure in the circulation tank is adjusted to be, for example, 0.30 to 0.39 MPa by the pressure control valve 3b.
  • This circulation tank 3 is also installed for gas-liquid separation in ozone water. Excess ozone gas that is not dissolved in the ozone water is gas-liquid separated from the solution in the circulation tank 3. And not only this surplus ozone gas but also the oxygen gas which ozone gas self-decomposed with time is exhausted through the above-mentioned pressure control valve 3b. Note that the ozone gas in the exhaust gas is decomposed by the ozone decomposer 6 before being discharged to the atmosphere.
  • FIG. 2A and 2B are diagrams showing an example of a general-purpose cleaning apparatus.
  • FIG. 2A is a schematic view of a batch processing type cleaning apparatus 10 that removes the photoresist by immersing the substrate on which the photoresist is formed in the supersaturated ozone water 14, and
  • FIG. 2B is a diagram in which the supersaturated ozone water 14 is discharged from a nozzle.
  • It is the schematic of the single wafer processing type cleaning apparatus 20 which sprays on the base
  • the batch processing type cleaning device 10 is opened to the atmosphere and stores a supersaturated ozone water 14, a supersaturated ozone water supply pipe 12 that supplies supersaturated ozone water 14 from the bottom of the soaking tank 11, and a supersaturated ozone water supply.
  • the supersaturated ozone water supply pipe 12 is connected to the ozone water production apparatus 1, and the supersaturated ozone water 14 produced by the ozone water production apparatus 1 is supplied to the immersion tank 11.
  • the single wafer processing type cleaning apparatus 20 includes a nozzle 21 for discharging the supersaturated ozone water 14 and spraying it on the photoresist, a supersaturated ozone water supply pipe 22 for supplying the supersaturated ozone water 14 to the nozzle 21, and a supersaturated ozone water supply pipe.
  • the needle valve 23 for adjusting the flow rate of the supersaturated ozone water 14 flowing through the inside 22 and the mounting table 24 for mounting the silicon wafer 15 having the photoresist formed on the surface thereof facing the nozzle 21 are provided.
  • the supersaturated ozone water supply pipe 22 is connected to the ozone water production apparatus 1, and the supersaturated ozone water 14 produced by the ozone water production apparatus 1 is supplied to the nozzle 21.
  • the batch processing type cleaning device 10 and the single wafer processing type cleaning device 20 are general-purpose cleaning devices, and supersaturated ozone water 14 is applied as ozone water used in these cleaning devices.
  • supersaturated ozone water 14 is stored in the immersion tank 11, and a plurality of silicon wafers 15 having a photoresist formed thereon are immersed. After immersion for a predetermined time, the photoresist is removed by pulling up the silicon wafer 15.
  • the supersaturated ozone water 14 is discharged from the nozzle 21, and the photoresist is removed by spraying the supersaturated ozone water 14 onto the photoresist formed on the surface of the silicon wafer 15.
  • the removal rate can be further improved by performing washing in a state where the decrease in ozone concentration of the supersaturated aqueous solution is suppressed.
  • FIG. 3A and 3B are diagrams showing an example of a cleaning apparatus having a function of suppressing a decrease in ozone concentration.
  • FIG. 3A is a schematic diagram of the batch processing type cleaning apparatus 30, and
  • FIG. 3B is a schematic diagram of the single wafer processing type cleaning apparatus 40.
  • the batch processing type cleaning device 30 is configured to be hermetically sealed, an immersion tank 31 that stores the supersaturated ozone water 14, a supersaturated ozone water supply pipe 32 that supplies the supersaturated ozone water 14 from the bottom of the immersion tank 31, and a supersaturated ozone water.
  • 14 is provided with a drain pipe 33 for draining 14 from the immersion tank 31 and a needle valve 34 for adjusting the flow rate of the supersaturated ozone water 14 flowing in the drain pipe 33.
  • the supersaturated ozone water supply pipe 32 is connected to the ozone water production apparatus 1, and the supersaturated ozone water 14 produced by the ozone water production apparatus 1 is supplied to the immersion tank 31.
  • the immersion tank 31 is sealed in a state where a plurality of silicon wafers 15 are immersed, and the pressure in the immersion tank 31 is made higher than the atmospheric pressure by adjusting the flow rate of the supersaturated ozone water 14 flowing in the drain pipe 33. To do. Thereby, the fall of the ozone concentration of the supersaturated ozone water 14 can be suppressed and immersed.
  • the single wafer processing type cleaning apparatus 40 includes a nozzle 41 for discharging the supersaturated ozone water 14 and spraying it on the photoresist, a supersaturated ozone water supply pipe 42 for supplying the supersaturated ozone water 14 to the nozzle 41, and a supersaturated ozone water supply pipe.
  • the needle valve 43 which adjusts the flow volume of the supersaturated ozone water 14 which flows in the inside 42, and the mounting base 44 which mounts the silicon wafer 15 in which the photoresist was formed in the surface facing the nozzle 41 are provided.
  • the supersaturated ozone water supply pipe 42 is connected to the ozone water production apparatus 1, and the supersaturated ozone water 14 produced by the ozone water production apparatus 1 is supplied to the nozzle 41.
  • the mounting table 24 is installed so that the distance between the tip of the nozzle 21 and the silicon wafer 15 is about 10 mm.
  • the mounting table 44 is installed so that the distance between the tip of the nozzle 41 and the silicon wafer 15 is about 1 mm.
  • the removal rate of the photoresist can be further improved by suppressing the decrease in the ozone concentration of the supersaturated ozone water.
  • Example 1 In Experimental Example 1, in order to compare the photoresist removal rates of normal ozone water and supersaturated ozone water, the batch processing cleaning device 10 and the single wafer processing cleaning device 20 shown in FIGS. 2A and 2B were used. The photoresist was removed.
  • test sample used in the experiment was obtained by applying a positive resin having a phenol novolac resin as a base polymer to a thickness of 2 ⁇ m on a silicon substrate, and then baking.
  • This experimental sample has no circuit pattern, and the entire surface of the silicon substrate is covered with a resist.
  • Table 1 shows the results of measuring the photoresist removal rate using this sample.
  • the removal rate when supersaturated ozone water was used was 0.29 ⁇ m / min, and this rate was about 5 times higher than when normal ozone water was used. Further, this speed achieves a speed of 0.2 ⁇ m / min or more, which is a standard for practical use.
  • the removal rate when using supersaturated ozone water was 2.18 ⁇ m / min, and this rate was also about three times higher than when using normal ozone water. Furthermore, this speed has also reached a speed of 1.0 ⁇ m / min or more, which is a standard for practical use.
  • An object of the present invention is to reduce an economical burden in switching from conventional cleaning in order to widely disseminate ozone water cleaning with a small environmental load.
  • priority is given to improving the removal rate of photoresist rather than economically, batch processing with a mechanism for suppressing a decrease in ozone concentration as shown in FIGS. 3A and 3B It is preferable to use the type cleaning device 30 and the single wafer processing type cleaning device 40.
  • the photoresist is removed using supersaturated ozone water (temperature: 70 ° C., concentration: 300 mg / L) in the batch processing type cleaning device 30 and the single wafer processing type cleaning device 40, and the removal rate is measured in the same manner as in Experimental Example 1. did.
  • the results are shown in Table 2.
  • the removal rate was 1.33 ⁇ m / min, which was about 5 times higher than the case of using a general-purpose cleaning device.
  • the removal rate was improved to 2.40 ⁇ m / min.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
PCT/JP2011/070823 2010-11-30 2011-09-13 フォトレジストの除去方法 WO2012073574A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2011800356203A CN103003919A (zh) 2010-11-30 2011-09-13 光致抗蚀剂的除去方法
US13/813,573 US20130233357A1 (en) 2010-11-30 2011-09-13 Method for removing photoresist
KR1020137001785A KR20130020845A (ko) 2010-11-30 2011-09-13 포토레지스트의 제거 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010267859A JP2012119491A (ja) 2010-11-30 2010-11-30 フォトレジストの除去方法
JP2010-267859 2010-11-30

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WO2012073574A1 true WO2012073574A1 (ja) 2012-06-07

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US (1) US20130233357A1 (ko)
JP (1) JP2012119491A (ko)
KR (1) KR20130020845A (ko)
CN (1) CN103003919A (ko)
TW (1) TW201222173A (ko)
WO (1) WO2012073574A1 (ko)

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JP2016503340A (ja) * 2012-11-08 2016-02-04 エムケイエス インストゥルメンツ， インコーポレイテッド 非加圧のオゾン化脱イオン水（ｄｉ０３）の再循環及び回収システム並びに方法

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WO2013086217A1 (en) 2011-12-06 2013-06-13 Masco Corporation Of Indiana Ozone distribution in a faucet
CN105336645B (zh) * 2014-08-14 2021-04-30 无锡华瑛微电子技术有限公司 利用含臭氧的流体处理半导体晶片表面的装置及方法
JP6592316B2 (ja) * 2015-09-24 2019-10-16 エイブリック株式会社 半導体基板処理装置、フォトレジストを剥離する方法、および半導体装置の製造方法
CN115093008B (zh) 2015-12-21 2024-05-14 德尔塔阀门公司 包括消毒装置的流体输送系统
JP7089902B2 (ja) * 2018-02-28 2022-06-23 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、基板処理装置における処理液排出方法、基板処理装置における処理液交換方法、基板処理装置における基板処理方法
TWI795559B (zh) * 2018-05-02 2023-03-11 國立大學法人東北大學 臭氧水之製造法
JP2020155721A (ja) * 2019-03-22 2020-09-24 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
CN111105996B (zh) * 2020-01-03 2021-11-09 长江存储科技有限责任公司 待清洗工件的清洗方法及清洗设备

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JP2006196478A (ja) * 2003-04-21 2006-07-27 Sekisui Chem Co Ltd レジスト除去方法及びレジスト除去装置

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JP2002033300A (ja) * 2000-07-18 2002-01-31 Sasakura Engineering Co Ltd フォトレジスト膜除去方法及び装置
JP2004207515A (ja) * 2002-12-25 2004-07-22 Sekisui Chem Co Ltd レジスト除去装置及びレジスト除去方法
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Publication number Priority date Publication date Assignee Title
JP2016503340A (ja) * 2012-11-08 2016-02-04 エムケイエス インストゥルメンツ， インコーポレイテッド 非加圧のオゾン化脱イオン水（ｄｉ０３）の再循環及び回収システム並びに方法
JP2017121628A (ja) * 2012-11-08 2017-07-13 エムケイエス インストゥルメンツ， インコーポレイテッド 非加圧のオゾン化脱イオン水（ｄｉ０３）の再循環及び回収システム並びに方法

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CN103003919A (zh) 2013-03-27
JP2012119491A (ja) 2012-06-21
KR20130020845A (ko) 2013-02-28
US20130233357A1 (en) 2013-09-12
TW201222173A (en) 2012-06-01

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