WO2012058828A1 - 化学气相沉积设备及其冷却箱 - Google Patents

化学气相沉积设备及其冷却箱 Download PDF

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Publication number
WO2012058828A1
WO2012058828A1 PCT/CN2010/079036 CN2010079036W WO2012058828A1 WO 2012058828 A1 WO2012058828 A1 WO 2012058828A1 CN 2010079036 W CN2010079036 W CN 2010079036W WO 2012058828 A1 WO2012058828 A1 WO 2012058828A1
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Prior art keywords
vapor deposition
chemical vapor
deposition apparatus
gas passage
cleaning gas
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French (fr)
Inventor
贺成明
洪峻铭
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US12/997,019 priority Critical patent/US20120103258A1/en
Publication of WO2012058828A1 publication Critical patent/WO2012058828A1/zh
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases

Definitions

  • the invention relates to a chemical vapor deposition device and a cooling box thereof, in particular to a chemical vapor deposition device capable of self-cleaning a cavity and a cooling box thereof.
  • Chemical Vapor Deposition is a chemical process technology used to produce high purity, high performance solid materials.
  • the cleaning gas such as NF3 gas
  • RPS Remote Plasma Source
  • F fluorine
  • Block a gas conduit
  • the cooling box or gas pipe is made of a metal material, such as aluminum
  • some of the fluoride ions may react with the metal material of the cooling box or the gas pipe before the fluorine ions enter the reaction chamber, and Entering the reaction chamber, for example, fluoride ions may react with aluminum to form aluminum fluoride. Therefore, the fluoride ions entering the reaction chamber may not be sufficient to completely clean the chamber itself, that is, the degree of cleanliness (clean Insufficient rate affects the cleanliness of the reaction chamber.
  • the main object of the present invention is to provide a chemical vapor deposition apparatus, the chemical vapor deposition apparatus comprising:
  • At least one cleaning gas passage connected between the reaction chamber and a remote plasma source
  • a layer of anti-fluoridation material is formed in the cleaning gas passage.
  • Another object of the present invention is to provide a chemical vapor deposition apparatus, the chemical vapor deposition apparatus comprising:
  • At least one cleaning gas passage connected between the reaction chamber and the remote plasma source, wherein the cleaning gas passage is formed in the first cooling tank, the gas conduit, and the second cooling tank At least one;
  • a layer of anti-fluoridation material is formed in the cleaning gas passage.
  • At least one cleaning gas passage formed in the tank and connected between the reaction chamber of the chemical vapor deposition apparatus and the remote plasma source;
  • a layer of anti-fluoridation material is formed in the cleaning gas passage.
  • the chemical vapor deposition apparatus further includes a first cooling tank, a gas pipeline, and a second cooling tank, wherein the first cooling tank is connected to the remote plasma source, and the gas pipeline is connected to The first cooling tank and the second cooling tank are connected to the reaction chamber.
  • the cleaning gas passage is formed in at least one of the first cooling tank, the gas conduit, and the second cooling tank.
  • the layer of fluorination resistant material is a coating.
  • the layer of fluorination resistant material is formed by a sleeve.
  • the material of the fluorination preventing material layer is polytetrafluoroethylene.
  • the fluorination preventing material layer is formed on all of the inner wall surfaces of the cleaning gas passage.
  • the fluorination preventing material layer is formed on a portion of the inner wall surface of the cleaning gas passage.
  • the chemical vapor deposition apparatus further includes a tube for preventing fluorination, which is integrally formed by a fluorine-proof material, and the cleaning gas passage is formed in the tube of the anti-fluoridation material. And forming the layer of anti-fluoridation material in the cleaning gas passage.
  • the fluorination preventing material layer is a material selected from the group consisting of metal oxides.
  • the chemical vapor deposition apparatus of the present invention can prevent the fluoride ion from undergoing a fluorination reaction before entering the reaction chamber by cleaning the fluorine-proof material layer in the gas passage to ensure the amount of fluorine ions entering the reaction chamber, thereby ensuring the reaction chamber. Indoor cleanliness.
  • Figure 1 shows a schematic view of a chemical vapor deposition apparatus in accordance with a first embodiment of the present invention
  • FIGS. 2A and 2B are schematic cross-sectional views showing a chemical vapor deposition apparatus in accordance with a first embodiment of the present invention
  • Figure 3 shows a schematic view of a chemical vapor deposition apparatus in accordance with a second embodiment of the present invention
  • Figure 4 shows a schematic view of a chemical vapor deposition apparatus in accordance with a third embodiment of the present invention.
  • the chemical vapor deposition apparatus 100 of the present embodiment can be used to deposit a material on a substrate.
  • the chemical vapor deposition apparatus 100 can form a thin film on a wafer or a glass substrate.
  • the chemical vapor deposition apparatus 100 of the present embodiment can introduce a fluorine ion gas through a remote plasma source (RPS) 101 to perform cavity self-cleaning.
  • RPS remote plasma source
  • the remote plasma source 101 can be disposed on the chemical vapor deposition apparatus 100; alternatively, the remote plasma source 101 can also be disposed outside the chemical vapor deposition apparatus 100.
  • FIG. 2A and FIG. 2B, FIG. 2A and FIG. 2B are schematic cross-sectional views showing a chemical vapor deposition apparatus according to a first embodiment of the present invention.
  • the chemical vapor deposition apparatus 100 of the present embodiment may include a reaction chamber 110, a first cooling tank 120, a gas conduit 130, a second cooling tank 140, a cleaning gas passage 150, and a fluorine-proof material layer 160.
  • the reaction chamber 110 is used to perform a deposition process, and a substrate to be deposited (not shown) may be placed in the reaction chamber 110 to deposit material on the substrate.
  • the first cooling box 120 and the second cooling box 140 may be used for cooling, and the first cooling box 120 may be connected to the remote plasma source 101, such as a metal tube, which is connected to the first cooling box 120 and the second cooling. Between the tanks 140 to allow gas to pass, the second cooling tank 140 can be connected to the reaction chamber 110.
  • the material of the box 121 of the first cooling box 120 and/or the box 141 of the second cooling box 140 may be metal, such as aluminum.
  • the cleaning gas passage 150 is a tank formed in the tank 121 , the gas duct 130 and/or the second cooling tank 140 of the first cooling tank 120 .
  • 141 is connected between the reaction chamber 110 and the remote plasma source 101 for supplying fluoride ion gas into the reaction chamber 110 by the remote plasma source 101. Therefore, the fluoride ion gas can be passed through the cleaning gas passage 150 through the remote plasma source 101, and is introduced into the reaction chamber 110 to perform self-cleaning of the chamber and improve the cleanliness in the reaction chamber 110.
  • the fluorination preventing material layer 160 of the present embodiment is formed on the inner wall surface of the cleaning gas passage 150 to prevent fluorination reaction of fluorine ions before entering the reaction chamber 110.
  • the fluorination resistant material layer 160 ensures the amount of fluoride ions entering the reaction chamber 110.
  • the fluorine-proof material layer 160 can be a coating.
  • the layer) is formed on the inner wall surface of the cleaning gas passage 150 by a fluorine-proof material.
  • This anti-fluoridation material layer 160 can be, for example, Teflon or other anti-fluoridation material that does not react with fluoride ions.
  • the anti-fluoridation material layer 160 is preferably selected from materials other than the metal oxide to ensure the anti-fluorination function.
  • the fluorination preventing material layer 160 of the present embodiment may be formed on the entire inner wall surface of the cleaning gas passage 150; or, the fluorination preventing material layer 160 may be formed on the inner wall surface of the cleaning gas passage 150,
  • the fluorinated material layer 160 may be formed only in the first cooling tank 120 and the second cooling tank 140, as shown in FIG. 2B.
  • the fluorination-proof material layer 160 covers at least a material (for example, aluminum) which reacts easily with fluorine ions to form an insulating effect, thereby preventing fluoride ions from undergoing a fluorination reaction before entering the reaction chamber 110.
  • the fluorination preventing material layer 160 may be formed at least in the box 121 and the second of the first cooling box 120.
  • the inside of the tank 141 of the cooling tank 140 is used to prevent a fluorination reaction.
  • a cleaning gas for example, NF3, C2F6, CF4, etc.
  • a cleaning gas can be dissociated into fluorine ions by the remote plasma source 101, and the fluoride ions can pass through the cleaning gas passage 150. It enters the reaction chamber 110 and reacts with residues (such as SiNX, Si, SiO2) in the reaction chamber 110, and is then pumped out of the reaction chamber 110 to achieve the self-cleaning effect of the chamber.
  • the fluorine-proof material layer 160 prevents the fluorine ions from undergoing a fluorination reaction before entering the reaction chamber 110 to ensure the amount of fluorine ions entering the reaction chamber 110, and the reaction chamber 110 is improved.
  • the problem of insufficient cleaning is caused by insufficient fluoride ions. Therefore, the chemical vapor deposition apparatus 100 of the present embodiment can ensure the cleanliness in the reaction chamber 110.
  • the fluorination preventing material layer 260 of the second embodiment can be formed by a sleeve as compared with the first embodiment.
  • the sleeve is preferably integrally formed with a fluorination-proof material that can be placed in the cleaning gas passage 150 (in the first cooling tank 120, the gas conduit 130, and/or the second cooling tank 140), thereby forming an anti-fluorine
  • the layer of material 260 is within the cleaning gas passage 150 to ensure the amount of fluoride ions entering the reaction chamber 110.
  • the chemical vapor deposition apparatus 300 of the third embodiment may include a reaction chamber 310, a cleaning gas passage 350, and a fluorination preventing material tube 360, as compared with the first embodiment.
  • the fluorinated material tube 360 is preferably a tube body integrally formed with a fluorinated material and connected between the reaction chamber 310 and the remote plasma source 101.
  • the cleaning gas passage 350 is formed in the anti-fluoridation material tube 360, thus naturally forming a layer of anti-fluoridation material within the cleaning gas passage 350 to ensure the amount of fluoride ions entering the reaction chamber 310.
  • the chemical vapor deposition apparatus of the present invention can prevent the fluoride ion from undergoing a fluorination reaction before entering the reaction chamber by cleaning the fluorine-proof material layer in the gas passage to ensure the amount of fluorine ions entering the reaction chamber, thereby It ensures the cleanliness of the reaction chamber.

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
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Description

化学气相沉积设备及其冷却箱 技术领域
本发明涉及一种化学气相沉积设备及其冷却箱，特别是涉及一种可进行腔体自我清洗的化学气相沉积设备及其冷却箱。
 背景技术
化学气相沉积(Chemical Vapor Deposition，CVD)是一种用来产生纯度高、性能好的固态材料的化学制程技术。一般的化学气相沉积(CVD)设备可进行腔体自我清洗(Chamber self-clean)，以提高反应腔室(Chamber)内的洁净度(cleaniness)。此时，清洗气体，例如NF3气体，可通过一远程等离子源(Remote Plasma Source, RPS)来解离成氟(F)离子，此氟离子可经由冷却箱(cooling block)及气体管道来通入反应腔室内，以清洁此反应腔室。
然而，由于冷却箱或气体管道是以金属材料来制成，例如铝，因此，在氟离子进入反应腔室之前，部分的氟离子可能会跟冷却箱或气体管道的金属材料发生反应，而无法进入反应腔室内，例如氟离子可能会跟铝反应成氟化铝。因此，进入反应腔室内的氟离子可能不足以完全地进行腔体自我清洗，亦即清洗度(clean rate)不足，而影响反应腔室内的洁净度。
故，有必要提供一种化学气相沉积设备及其冷却箱，以解决现有技术所存在的问题。
 技术问题
本发明的主要目的在于提供一种化学气相沉积设备，所述化学气相沉积设备包括：
反应腔室；
至少一清洁气体通道，连接于所述反应腔室与远程等离子源之间；以及
防氟化材料层，形成于所述清洁气体通道内。
本发明的另一目的在于提供一种化学气相沉积设备，所述化学气相沉积设备包括：
反应腔室；
第一冷却箱，连接于远程等离子源；
第二冷却箱，连接于所述反应腔室；
气体管道，连接于所述第一冷却箱与所述第二冷却箱之间；
至少一清洁气体通道，连接于所述反应腔室与所述远程等离子源之间，其中所述清洁气体通道是形成于所述第一冷却箱、所述气体管道及所述第二冷却箱的至少一个内；以及
防氟化材料层，形成于所述清洁气体通道内。
本发明的又一目的在于提供一种化学气相沉积设备的冷却箱，所述冷却箱包括：
箱体；
至少一清洁气体通道，形成于所述箱体内，并连接于所述化学气相沉积设备的反应腔室以及远程等离子源之间；以及
防氟化材料层，形成于所述清洁气体通道内。
 技术解决方案
在本发明的一实施例中，所述化学气相沉积设备还包括第一冷却箱、气体管道及第二冷却箱，所述第一冷却箱连接于所述远程等离子源，所述气体管道连接于所述第一冷却箱与所述第二冷却箱，所述第二冷却箱连接于所述反应腔室。
在本发明的一实施例中，所述清洁气体通道是形成于所述第一冷却箱、所述气体管道及所述第二冷却箱的至少一个内。
在本发明的一实施例中，所述防氟化材料层是涂层。
在本发明的一实施例中，所述防氟化材料层是由套管来形成。
在本发明的一实施例中，所述防氟化材料层的材料为聚四氟乙烯。
在本发明的一实施例中，所述防氟化材料层形成于所述清洁气体通道的全部内壁表面上。
在本发明的一实施例中，所述防氟化材料层形成于所述清洁气体通道的部分内壁表面上。
在本发明的一实施例中，所述化学气相沉积设备还包括防氟化材料管，其是以防氟化材料来一体成型，所述清洁气体通道是形成于所述防氟化材料管内，而形成所述防氟化材料层于所述清洁气体通道内。
在本发明的一实施例中，所述防氟化材料层是选自金属氧化物以外的材料。
本发明的化学气相沉积设备可通过清洁气体通道内的防氟化材料层来防止氟离子在进入反应腔室之前发生氟化反应，以确保氟离子进入反应腔室的量，因而可确保反应腔室内的洁净度。
 有益效果
本发明的化学气相沉积设备可通过清洁气体通道内的防氟化材料层来防止氟离子在进入反应腔室之前发生氟化反应，以确保氟离子进入反应腔室的量，因而可确保反应腔室内的洁净度。
 附图说明
为让本发明的上述内容能更明显易懂，下文特举优选实施例，并配合所附图式，作详细说明如下：
图1显示依照本发明的第一实施例的化学气相沉积设备的示意图；
图2A和图2B显示依照本发明的第一实施例的化学气相沉积设备的剖面示意图；
图3显示依照本发明的第二实施例的化学气相沉积设备的示意图；以及
图4显示依照本发明的第三实施例的化学气相沉积设备的示意图。
 本发明的最佳实施方式
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。
在图中，结构相似的单元是以相同标号表示。
请参照图1，其显示依照本发明的第一实施例的化学气相沉积设备的示意图。本实施例的化学气相沉积设备100可用以沉积材料于基材上，例如，化学气相沉积设备100可形成薄膜于晶圆或玻璃基板上。本实施例的化学气相沉积设备100可通过远程等离子源(RPS)101来引入氟离子气体，以进行腔体自我清洗。此远程等离子源101可设置于化学气相沉积设备100上；或者，此远程等离子源101亦可设置于化学气相沉积设备100之外。
请参照图1、图2A及图2B，图2A及图2B显示依照本发明的第一实施例的化学气相沉积设备的剖面示意图。本实施例的化学气相沉积设备100可包括反应腔室110、第一冷却箱120、气体管道130、第二冷却箱140、清洁气体通道150及防氟化材料层160。反应腔室110是用以进行沉积制程，待沉积的基材(未绘示)可置于反应腔室110，以沉积材料于基材上。第一冷却箱120与第二冷却箱140可用以进行冷却，第一冷却箱120可连接于远程等离子源101，气体管道130例如为金属管体，其连接于第一冷却箱120与第二冷却箱140之间，以允许气体通过，第二冷却箱140可连接于反应腔室110。其中，第一冷却箱120的箱体121及/或第二冷却箱140的箱体141的材料可为金属，例如铝。
如图1、图2A及图2B所示，在本实施例中，此清洁气体通道150是形成于第一冷却箱120的箱体121、气体管道130及/或第二冷却箱140的箱体141内，并连接于反应腔室110以及远程等离子源101之间，用以由远程等离子源101提供氟离子气体至反应腔室110内。因此，氟离子气体可由远程等离子源101来通过此清洁气体通道150，而通入反应腔室110内，以进行腔体自我清洗，并改善反应腔室110内的洁净度。
如图1、图2A及图2B所示，本实施例的防氟化材料层160是形成于清洁气体通道150的内壁表面上，用以防止氟离子在进入反应腔室110之前发生氟化反应，因此，此防氟化材料层160可确保进入反应腔室110内的氟离子量。在本实施例中，此防氟化材料层160可为一涂层(coating layer)，其是以一防氟化材料来形成于清洁气体通道150的内壁表面上。此防氟化材料层160可例如为聚四氟乙烯(Teflon)或其它防氟化材料，其不会与氟离子发生反应。值得注意的是，由于金属氧化物(如氧化铝)容易剥落而失去防氟化功能，因而防氟化材料层160优选是选自金属氧化物以外的材料，以确保防氟化功能。
如图2A所示，本实施例的防氟化材料层160可形成于清洁气体通道150的全部内壁表面上；或者，防氟化材料层160亦可形成于清洁气体通道150部分内壁表面上，例如防氟化材料层160可仅形成于第一冷却箱120与第二冷却箱140内，如图2B所示。防氟化材料层160至少是覆盖住易与氟离子产生反应的材质(例如铝)上，以形成隔绝效果，因而可防止氟离子在进入反应腔室110之前发生氟化反应。例如，当第一冷却箱120的箱体121及第二冷却箱140的箱体141的材料为铝时，防氟化材料层160可至少形成于第一冷却箱120的箱体121及第二冷却箱140的箱体141内，以防止氟化反应。
当本实施例的化学气相沉积设备100进行自我清洗时，一清洁气体(例如NF3、C2F6、CF4等)可通过远程等离子源101来解离成氟离子，此氟离子可通过清洁气体通道150来进入反应腔室110内，并与反应腔室110内的残留物(例如SiNX、Si、SiO2)发生反应，接着被抽出至反应腔室110之外，以达到腔体自我清洗的功效。当氟离子通过清洁气体通道150时，防氟化材料层160可防止氟离子在进入反应腔室110之前发生氟化反应，以确保氟离子进入反应腔室110的量，而改善反应腔室110内的氟离子不足所造成清洗度不足的问题。因此，本实施例的化学气相沉积设备100可确保反应腔室110内的洁净度。
请参照图3，其显示依照本发明的第二实施例的化学气相沉积设备的示意图。以下仅就本实施例与第一实施例间的相异处进行说明，而其相似处则在此不再赘述。相较于第一实施例，第二实施例的防氟化材料层260可由一套管来形成。此套管优选是以防氟化材料来一体成型，其可套置于清洁气体通道150内(第一冷却箱120、气体管道130及/或第二冷却箱140内)，因而可形成防氟化材料层260于清洁气体通道150内，以确保氟离子进入反应腔室110的量。
请参照图4，其显示依照本发明的第三实施例的化学气相沉积设备的示意图。以下仅就本实施例与第一实施例间的相异处进行说明，而其相似处则在此不再赘述。相较于第一实施例，第三实施例的化学气相沉积设备300可包括反应腔室310、清洁气体通道350及防氟化材料管360。防氟化材料管360优选是一管体，其是以防氟化材料来一体成型，并连接于反应腔室310与远程等离子源101之间。清洁气体通道350是形成于防氟化材料管360内，因而自然地形成防氟化材料层于清洁气体通道350内，以确保氟离子进入反应腔室310的量。
由上述可知，本发明的化学气相沉积设备可通过清洁气体通道内的防氟化材料层来防止氟离子在进入反应腔室之前发生氟化反应，以确保氟离子进入反应腔室的量，因而可确保反应腔室内的洁净度。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。
 本发明的实施方式
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Claims (18)

  1. 一种化学气相沉积设备，其特征在于：所述化学气相沉积设备包括：
    反应腔室；
    第一冷却箱，连接于远程等离子源；
    第二冷却箱，连接于所述反应腔室；
    气体管道，连接于所述第一冷却箱与所述第二冷却箱之间；
    至少一清洁气体通道，连接于所述反应腔室与所述远程等离子源之间，其中所述清洁气体通道是形成于所述第一冷却箱、所述气体管道及所述第二冷却箱的至少一个内；以及
    防氟化材料层，形成于所述清洁气体通道内。
  2. 一种化学气相沉积设备，其特征在于：所述化学气相沉积设备包括：
    反应腔室；
    至少一清洁气体通道，连接于所述反应腔室与远程等离子源之间；以及
    防氟化材料层，形成于所述清洁气体通道内。
  3. 根据权利要求2所述的化学气相沉积设备，其特征在于：还包括第一冷却箱、气体管道及第二冷却箱，所述第一冷却箱连接于所述远程等离子源，所述气体管道连接于所述第一冷却箱与所述第二冷却箱，所述第二冷却箱连接于所述反应腔室。
  4. 根据权利要求3所述的化学气相沉积设备，其特征在于：所述清洁气体通道是形成于所述第一冷却箱、所述气体管道及所述第二冷却箱的至少一个内。
  5. 根据权利要求2所述的化学气相沉积设备，其特征在于：所述防氟化材料层是涂层。
  6. 根据权利要求2所述的化学气相沉积设备，其特征在于：所述防氟化材料层是由套管来形成。
  7. 根据权利要求2所述的化学气相沉积设备，其特征在于：所述防氟化材料层的材料为聚四氟乙烯。
  8. 根据权利要求2所述的化学气相沉积设备，其特征在于：所述防氟化材料层形成于所述清洁气体通道的全部内壁表面上。
  9. 根据权利要求2所述的化学气相沉积设备，其特征在于：所述防氟化材料层形成于所述清洁气体通道的部分内壁表面上。
  10. 根据权利要求2所述的化学气相沉积设备，其特征在于：还包括防氟化材料管，其是以防氟化材料来一体成型，所述清洁气体通道是形成于所述防氟化材料管内，而形成所述防氟化材料层于所述清洁气体通道内。
  11. 根据权利要求2所述的化学气相沉积设备，其特征在于：所述防氟化材料层是选自金属氧化物以外的材料。
  12. 一种化学气相沉积设备的冷却箱，其特征在于：所述冷却箱包括：
    箱体；
    至少一清洁气体通道，形成于所述箱体内，并连接于所述化学气相沉积设备的反应腔室以及远程等离子源之间；以及
    防氟化材料层，形成于所述清洁气体通道内。
  13. 根据权利要求12所述的冷却箱，其特征在于：所述防氟化材料层是涂层。
  14. 根据权利要求12所述的冷却箱，其特征在于：所述防氟化材料层是由套管来形成。
  15. 根据权利要求12所述的冷却箱，其特征在于：所述防氟化材料层的材料为聚四氟乙烯。
  16. 根据权利要求12所述的冷却箱，其特征在于：所述防氟化材料层形成于所述清洁气体通道的全部内壁表面上。
  17. 根据权利要求12所述的冷却箱，其特征在于：所述防氟化材料层形成于所述清洁气体通道的部分内壁表面上。
  18. 根据权利要求12所述的冷却箱，其特征在于：所述防氟化材料层是选自金属氧化物以外的材料。
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Publication number Priority date Publication date Assignee Title
CN104498909A (zh) * 2014-12-05 2015-04-08 信利（惠州）智能显示有限公司 一种cvd成膜方法
KR20160070929A (ko) * 2014-12-10 2016-06-21 삼성디스플레이 주식회사 표시 장치 제조 장치 및 표시 장치 제조 방법
CN110616415A (zh) * 2018-06-20 2019-12-27 深圳市永盛隆科技有限公司 冷却装置
CN111705307A (zh) * 2020-06-15 2020-09-25 苏州迈为科技股份有限公司 等离子体气相沉积设备

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN85100378A (zh) * 1985-04-01 1986-08-27 湖南省机械研究所 用工业纯原料气进行等离子化学气相沉积的涂层方法与设备
CN1398661A (zh) * 2001-07-23 2003-02-26 日本酸素株式会社 化学气相沉积的排气处理回收的方法及装置
US20050020071A1 (en) * 2001-07-31 2005-01-27 Jun Sonobe Method and apparatus for cleaning and method and apparatus for etching
CN101278072A (zh) * 2005-08-02 2008-10-01 麻省理工学院 使用nf3除去表面沉积物的方法
CN201151741Y (zh) * 2006-11-28 2008-11-19 国家纳米技术与工程研究院 一种用于非电化学金属沉积法加工硅晶片的反应装置
CN201459237U (zh) * 2009-06-26 2010-05-12 上海企诺电子科技有限公司 一种复合材料原子层淀积反应器

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003264186A (ja) * 2002-03-11 2003-09-19 Asm Japan Kk Ｃｖｄ装置処理室のクリーニング方法
TW200718479A (en) * 2005-08-02 2007-05-16 Massachusetts Inst Technology Method of using sulfur fluoride for removing surface deposits
CN100505151C (zh) * 2006-07-14 2009-06-24 中芯国际集成电路制造(上海)有限公司 延长等离子蚀刻系统中反应腔使用寿命的方法
CN101220461A (zh) * 2007-01-08 2008-07-16 和舰科技(苏州)有限公司 一种半导体制造设备反应室的清洁方法
US20090255798A1 (en) * 2008-04-12 2009-10-15 Gaku Furuta Method to prevent parasitic plasma generation in gas feedthru of large size pecvd chamber
CN101764044B (zh) * 2008-12-24 2012-08-22 北京北方微电子基地设备工艺研究中心有限责任公司 等离子装置工艺腔预处理的方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN85100378A (zh) * 1985-04-01 1986-08-27 湖南省机械研究所 用工业纯原料气进行等离子化学气相沉积的涂层方法与设备
CN1398661A (zh) * 2001-07-23 2003-02-26 日本酸素株式会社 化学气相沉积的排气处理回收的方法及装置
US20050020071A1 (en) * 2001-07-31 2005-01-27 Jun Sonobe Method and apparatus for cleaning and method and apparatus for etching
CN101278072A (zh) * 2005-08-02 2008-10-01 麻省理工学院 使用nf3除去表面沉积物的方法
CN201151741Y (zh) * 2006-11-28 2008-11-19 国家纳米技术与工程研究院 一种用于非电化学金属沉积法加工硅晶片的反应装置
CN201459237U (zh) * 2009-06-26 2010-05-12 上海企诺电子科技有限公司 一种复合材料原子层淀积反应器

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