WO2012058828A1

WO2012058828A1 - Chemical vapor deposition deviceand cooling box thereof

Info

Publication number: WO2012058828A1
Application number: PCT/CN2010/079036
Authority: WO
Inventors: 贺成明; 洪峻铭
Original assignee: 深圳市华星光电技术有限公司
Priority date: 2010-11-02
Filing date: 2010-11-24
Publication date: 2012-05-10
Also published as: CN102002686A

Abstract

A chemical vapor deposition device and a cooling box thereof are provided. The chemical vapor deposition device(100) comprises a reaction chamber (110), a first cooling box (120) connecting with a remote plasma source (101), a second cooling box (140) connecting with the reaction chamber (110), a gas pipe (130) connecting with the first cooling box (120) and the second cooling box (140), at least a cleaning gas channel (150) connecting with the reaction chamber (110) and the remote plasma source (101), and an anti-fluorination material layer (160) being formed in the cleaning gas channel (150). Wherein, the cleaning gas channel (150) is formed in at least one of the first cooling box (120), the second cooling box (140) and the gas pipe (130). The cooling box (120, 140) comprises a box body (121), a cleaning gas channel (150) being formed in the box body (121), and an anti-fluorination material layer (160).

Description

Chemical vapor deposition equipment and its cooling box

Technical field

The invention relates to a chemical vapor deposition device and a cooling box thereof, in particular to a chemical vapor deposition device capable of self-cleaning a cavity and a cooling box thereof.

Background technique

Chemical Vapor Deposition, CVD) is a chemical process technology used to produce high purity, high performance solid materials. General chemical vapor deposition (CVD) equipment for chamber self-cleaning (Chamber Self-clean) to improve cleanliness in the chamber. At this point, the cleaning gas, such as NF3 gas, can be passed through a remote plasma source (Remote Plasma Source, RPS) to dissociate into fluorine (F) ions, which can be cooled (cooling) Block) and a gas conduit are passed into the reaction chamber to clean the reaction chamber.

However, since the cooling box or gas pipe is made of a metal material, such as aluminum, some of the fluoride ions may react with the metal material of the cooling box or the gas pipe before the fluorine ions enter the reaction chamber, and Entering the reaction chamber, for example, fluoride ions may react with aluminum to form aluminum fluoride. Therefore, the fluoride ions entering the reaction chamber may not be sufficient to completely clean the chamber itself, that is, the degree of cleanliness (clean Insufficient rate affects the cleanliness of the reaction chamber.

Therefore, it is necessary to provide a chemical vapor deposition apparatus and a cooling box thereof to solve the problems of the prior art.

technical problem

The main object of the present invention is to provide a chemical vapor deposition apparatus, the chemical vapor deposition apparatus comprising:

Reaction chamber

At least one cleaning gas passage connected between the reaction chamber and a remote plasma source;

A layer of anti-fluoridation material is formed in the cleaning gas passage.

Another object of the present invention is to provide a chemical vapor deposition apparatus, the chemical vapor deposition apparatus comprising:

Reaction chamber

a first cooling tank connected to the remote plasma source;

a second cooling tank connected to the reaction chamber;

a gas pipe connected between the first cooling tank and the second cooling tank;

At least one cleaning gas passage connected between the reaction chamber and the remote plasma source, wherein the cleaning gas passage is formed in the first cooling tank, the gas conduit, and the second cooling tank At least one; and

A layer of anti-fluoridation material is formed in the cleaning gas passage.

It is still another object of the present invention to provide a cooling box for a chemical vapor deposition apparatus, the cooling box comprising:

Box

At least one cleaning gas passage formed in the tank and connected between the reaction chamber of the chemical vapor deposition apparatus and the remote plasma source;

A layer of anti-fluoridation material is formed in the cleaning gas passage.

Technical solution

In an embodiment of the invention, the chemical vapor deposition apparatus further includes a first cooling tank, a gas pipeline, and a second cooling tank, wherein the first cooling tank is connected to the remote plasma source, and the gas pipeline is connected to The first cooling tank and the second cooling tank are connected to the reaction chamber.

In an embodiment of the invention, the cleaning gas passage is formed in at least one of the first cooling tank, the gas conduit, and the second cooling tank.

In an embodiment of the invention, the layer of fluorination resistant material is a coating.

In an embodiment of the invention, the layer of fluorination resistant material is formed by a sleeve.

In an embodiment of the invention, the material of the fluorination preventing material layer is polytetrafluoroethylene.

In an embodiment of the invention, the fluorination preventing material layer is formed on all of the inner wall surfaces of the cleaning gas passage.

In an embodiment of the invention, the fluorination preventing material layer is formed on a portion of the inner wall surface of the cleaning gas passage.

In an embodiment of the invention, the chemical vapor deposition apparatus further includes a tube for preventing fluorination, which is integrally formed by a fluorine-proof material, and the cleaning gas passage is formed in the tube of the anti-fluoridation material. And forming the layer of anti-fluoridation material in the cleaning gas passage.

In an embodiment of the invention, the fluorination preventing material layer is a material selected from the group consisting of metal oxides.

The chemical vapor deposition apparatus of the present invention can prevent the fluoride ion from undergoing a fluorination reaction before entering the reaction chamber by cleaning the fluorine-proof material layer in the gas passage to ensure the amount of fluorine ions entering the reaction chamber, thereby ensuring the reaction chamber. Indoor cleanliness.

Beneficial effect

DRAWINGS

In order to make the above-mentioned contents of the present invention more comprehensible, the preferred embodiments are described below, and in conjunction with the accompanying drawings, the detailed description is as follows:

Figure 1 shows a schematic view of a chemical vapor deposition apparatus in accordance with a first embodiment of the present invention;

2A and 2B are schematic cross-sectional views showing a chemical vapor deposition apparatus in accordance with a first embodiment of the present invention;

Figure 3 shows a schematic view of a chemical vapor deposition apparatus in accordance with a second embodiment of the present invention;

Figure 4 shows a schematic view of a chemical vapor deposition apparatus in accordance with a third embodiment of the present invention.

BEST MODE FOR CARRYING OUT THE INVENTION

The following description of the various embodiments is provided to illustrate the specific embodiments of the invention. The directional terms mentioned in the present invention, such as "upper", "lower", "before", "after", "left", "right", "inside", "outside", "side", etc., are merely references. Attach the direction of the drawing. Therefore, the directional terminology used is for the purpose of illustration and understanding of the invention.

In the figures, structurally similar elements are denoted by the same reference numerals.

Referring to Figure 1, there is shown a schematic view of a chemical vapor deposition apparatus in accordance with a first embodiment of the present invention. The chemical vapor deposition apparatus 100 of the present embodiment can be used to deposit a material on a substrate. For example, the chemical vapor deposition apparatus 100 can form a thin film on a wafer or a glass substrate. The chemical vapor deposition apparatus 100 of the present embodiment can introduce a fluorine ion gas through a remote plasma source (RPS) 101 to perform cavity self-cleaning. The remote plasma source 101 can be disposed on the chemical vapor deposition apparatus 100; alternatively, the remote plasma source 101 can also be disposed outside the chemical vapor deposition apparatus 100.

Referring to FIG. 1, FIG. 2A and FIG. 2B, FIG. 2A and FIG. 2B are schematic cross-sectional views showing a chemical vapor deposition apparatus according to a first embodiment of the present invention. The chemical vapor deposition apparatus 100 of the present embodiment may include a reaction chamber 110, a first cooling tank 120, a gas conduit 130, a second cooling tank 140, a cleaning gas passage 150, and a fluorine-proof material layer 160. The reaction chamber 110 is used to perform a deposition process, and a substrate to be deposited (not shown) may be placed in the reaction chamber 110 to deposit material on the substrate. The first cooling box 120 and the second cooling box 140 may be used for cooling, and the first cooling box 120 may be connected to the remote plasma source 101, such as a metal tube, which is connected to the first cooling box 120 and the second cooling. Between the tanks 140 to allow gas to pass, the second cooling tank 140 can be connected to the reaction chamber 110. The material of the box 121 of the first cooling box 120 and/or the box 141 of the second cooling box 140 may be metal, such as aluminum.

As shown in FIG. 1 , FIG. 2A and FIG. 2B , in the present embodiment, the cleaning gas passage 150 is a tank formed in the tank 121 , the gas duct 130 and/or the second cooling tank 140 of the first cooling tank 120 . 141 is connected between the reaction chamber 110 and the remote plasma source 101 for supplying fluoride ion gas into the reaction chamber 110 by the remote plasma source 101. Therefore, the fluoride ion gas can be passed through the cleaning gas passage 150 through the remote plasma source 101, and is introduced into the reaction chamber 110 to perform self-cleaning of the chamber and improve the cleanliness in the reaction chamber 110.

As shown in FIG. 1, FIG. 2A and FIG. 2B, the fluorination preventing material layer 160 of the present embodiment is formed on the inner wall surface of the cleaning gas passage 150 to prevent fluorination reaction of fluorine ions before entering the reaction chamber 110. Thus, the fluorination resistant material layer 160 ensures the amount of fluoride ions entering the reaction chamber 110. In this embodiment, the fluorine-proof material layer 160 can be a coating. The layer) is formed on the inner wall surface of the cleaning gas passage 150 by a fluorine-proof material. This anti-fluoridation material layer 160 can be, for example, Teflon or other anti-fluoridation material that does not react with fluoride ions. It is to be noted that since the metal oxide (e.g., alumina) is easily peeled off and loses the anti-fluorination function, the anti-fluoridation material layer 160 is preferably selected from materials other than the metal oxide to ensure the anti-fluorination function.

As shown in FIG. 2A, the fluorination preventing material layer 160 of the present embodiment may be formed on the entire inner wall surface of the cleaning gas passage 150; or, the fluorination preventing material layer 160 may be formed on the inner wall surface of the cleaning gas passage 150, For example, the fluorinated material layer 160 may be formed only in the first cooling tank 120 and the second cooling tank 140, as shown in FIG. 2B. The fluorination-proof material layer 160 covers at least a material (for example, aluminum) which reacts easily with fluorine ions to form an insulating effect, thereby preventing fluoride ions from undergoing a fluorination reaction before entering the reaction chamber 110. For example, when the material of the box 121 of the first cooling box 120 and the box 141 of the second cooling box 140 is aluminum, the fluorination preventing material layer 160 may be formed at least in the box 121 and the second of the first cooling box 120. The inside of the tank 141 of the cooling tank 140 is used to prevent a fluorination reaction.

When the chemical vapor deposition apparatus 100 of the present embodiment performs self-cleaning, a cleaning gas (for example, NF3, C2F6, CF4, etc.) can be dissociated into fluorine ions by the remote plasma source 101, and the fluoride ions can pass through the cleaning gas passage 150. It enters the reaction chamber 110 and reacts with residues (such as SiNX, Si, SiO2) in the reaction chamber 110, and is then pumped out of the reaction chamber 110 to achieve the self-cleaning effect of the chamber. When the fluoride ions pass through the cleaning gas passage 150, the fluorine-proof material layer 160 prevents the fluorine ions from undergoing a fluorination reaction before entering the reaction chamber 110 to ensure the amount of fluorine ions entering the reaction chamber 110, and the reaction chamber 110 is improved. The problem of insufficient cleaning is caused by insufficient fluoride ions. Therefore, the chemical vapor deposition apparatus 100 of the present embodiment can ensure the cleanliness in the reaction chamber 110.

Referring to Figure 3, there is shown a schematic diagram of a chemical vapor deposition apparatus in accordance with a second embodiment of the present invention. Only the differences between the present embodiment and the first embodiment will be described below, and the similarities are not described herein again. The fluorination preventing material layer 260 of the second embodiment can be formed by a sleeve as compared with the first embodiment. The sleeve is preferably integrally formed with a fluorination-proof material that can be placed in the cleaning gas passage 150 (in the first cooling tank 120, the gas conduit 130, and/or the second cooling tank 140), thereby forming an anti-fluorine The layer of material 260 is within the cleaning gas passage 150 to ensure the amount of fluoride ions entering the reaction chamber 110.

Referring to Figure 4, there is shown a schematic diagram of a chemical vapor deposition apparatus in accordance with a third embodiment of the present invention. Only the differences between the present embodiment and the first embodiment will be described below, and the similarities are not described herein again. The chemical vapor deposition apparatus 300 of the third embodiment may include a reaction chamber 310, a cleaning gas passage 350, and a fluorination preventing material tube 360, as compared with the first embodiment. The fluorinated material tube 360 is preferably a tube body integrally formed with a fluorinated material and connected between the reaction chamber 310 and the remote plasma source 101. The cleaning gas passage 350 is formed in the anti-fluoridation material tube 360, thus naturally forming a layer of anti-fluoridation material within the cleaning gas passage 350 to ensure the amount of fluoride ions entering the reaction chamber 310.

It can be seen from the above that the chemical vapor deposition apparatus of the present invention can prevent the fluoride ion from undergoing a fluorination reaction before entering the reaction chamber by cleaning the fluorine-proof material layer in the gas passage to ensure the amount of fluorine ions entering the reaction chamber, thereby It ensures the cleanliness of the reaction chamber.

In the above, the present invention has been disclosed in the above preferred embodiments, but the preferred embodiments are not intended to limit the present invention, and those skilled in the art can make various modifications without departing from the spirit and scope of the invention. The invention is modified and retouched, and the scope of the invention is defined by the scope defined by the claims.

Embodiments of the invention

Industrial applicability

Sequence table free content

Claims

A chemical vapor deposition apparatus, characterized in that the chemical vapor deposition apparatus comprises:

Reaction chamber

a first cooling tank connected to the remote plasma source;

a second cooling tank connected to the reaction chamber;

a gas pipe connected between the first cooling tank and the second cooling tank;

At least one cleaning gas passage connected between the reaction chamber and the remote plasma source, wherein the cleaning gas passage is formed in the first cooling tank, the gas conduit, and the second cooling tank At least one; and

A layer of anti-fluoridation material is formed in the cleaning gas passage.
A chemical vapor deposition apparatus, characterized in that the chemical vapor deposition apparatus comprises:

Reaction chamber

At least one cleaning gas passage connected between the reaction chamber and a remote plasma source;

A layer of anti-fluoridation material is formed in the cleaning gas passage.
The chemical vapor deposition apparatus according to claim 2, further comprising a first cooling tank, a gas conduit, and a second cooling tank, wherein the first cooling tank is connected to the remote plasma source, and the gas pipeline is connected The second cooling tank is connected to the reaction chamber in the first cooling tank and the second cooling tank.
A chemical vapor deposition apparatus according to claim 3, wherein said cleaning gas passage is formed in at least one of said first cooling tank, said gas piping, and said second cooling tank.
The chemical vapor deposition apparatus according to claim 2, wherein the fluorination preventing material layer is a coating layer.
The chemical vapor deposition apparatus according to claim 2, wherein said fluorination preventing material layer is formed by a sleeve.
The chemical vapor deposition apparatus according to claim 2, wherein the material of the fluorination preventing material layer is polytetrafluoroethylene.
A chemical vapor deposition apparatus according to claim 2, wherein said fluorination preventing material layer is formed on all inner wall surfaces of said cleaning gas passage.
A chemical vapor deposition apparatus according to claim 2, wherein said fluorination preventing material layer is formed on a portion of the inner wall surface of said cleaning gas passage.
The chemical vapor deposition apparatus according to claim 2, further comprising: a tube for preventing fluorination, which is integrally formed by a fluorine-proof material, wherein the cleaning gas passage is formed in the tube of the fluorine-proof material Forming the layer of anti-fluoridation material in the cleaning gas passage.
The chemical vapor deposition apparatus according to claim 2, wherein the fluorination preventing material layer is a material selected from the group consisting of metal oxides.
A cooling box for a chemical vapor deposition apparatus, characterized in that the cooling box comprises:

Box

At least one cleaning gas passage formed in the tank and connected between the reaction chamber of the chemical vapor deposition apparatus and the remote plasma source;

A layer of anti-fluoridation material is formed in the cleaning gas passage.
A cooling cabinet according to claim 12, wherein said layer of anti-fluorinated material is a coating.
The cooling box according to claim 12, wherein said layer of fluorination preventing material is formed by a sleeve.
The cooling box according to claim 12, wherein the material of the fluorination preventing material layer is polytetrafluoroethylene.
The cooling case according to claim 12, wherein said fluorination preventing material layer is formed on all of the inner wall surfaces of said cleaning gas passage.
A cooling case according to claim 12, wherein said fluorination preventing material layer is formed on a portion of the inner wall surface of said cleaning gas passage.
A cooling case according to claim 12, wherein said layer of anti-fluorinated material is a material selected from the group consisting of metal oxides.