WO2012057651A1 - Procédé de production de pierres précieuses à partir de carbure de silicium - Google Patents

Procédé de production de pierres précieuses à partir de carbure de silicium Download PDF

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Publication number
WO2012057651A1
WO2012057651A1 PCT/RU2011/000627 RU2011000627W WO2012057651A1 WO 2012057651 A1 WO2012057651 A1 WO 2012057651A1 RU 2011000627 W RU2011000627 W RU 2011000627W WO 2012057651 A1 WO2012057651 A1 WO 2012057651A1
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WO
WIPO (PCT)
Prior art keywords
blanks
polishing
moissanite
grinding
faceting
Prior art date
Application number
PCT/RU2011/000627
Other languages
English (en)
Russian (ru)
Inventor
Александр Валерьевич КЛИШИН
Юрий Иванович ПЕТРОВ
Виктор Анатольевич ТУЗЛУКОВ
Original Assignee
Общество С Ограниченной Ответственностью "Гранник"
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to KR1020137013632A priority Critical patent/KR20140037013A/ko
Priority to JP2013536555A priority patent/JP2014506138A/ja
Priority to US13/519,651 priority patent/US20120298092A1/en
Priority to CN2011800517775A priority patent/CN103314139A/zh
Priority to EP11836702.8A priority patent/EP2634295A1/fr
Priority to CA2816447A priority patent/CA2816447A1/fr
Application filed by Общество С Ограниченной Ответственностью "Гранник" filed Critical Общество С Ограниченной Ответственностью "Гранник"
Priority to BR112013010205A priority patent/BR112013010205A2/pt
Priority to EA201300509A priority patent/EA201300509A1/ru
Priority to AU2011321040A priority patent/AU2011321040A1/en
Publication of WO2012057651A1 publication Critical patent/WO2012057651A1/fr
Priority to IL225960A priority patent/IL225960A0/en
Priority to MA35931A priority patent/MA34679B1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • A—HUMAN NECESSITIES
    • A44—HABERDASHERY; JEWELLERY
    • A44C—PERSONAL ADORNMENTS, e.g. JEWELLERY; COINS
    • A44C17/00—Gems or the like
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/12—Production of homogeneous polycrystalline material with defined structure directly from the gas state

Definitions

  • a method of producing gemstones from silicon carbide A method of producing gemstones from silicon carbide.
  • the invention relates to the cultivation and processing of single crystals.
  • Silicon carbide obtained by this method can be used not only for the electronics industry, jewelry production, but also as glass for watches, mobile phones, glasses, players and other accessories.
  • Silicon carbide (carborundum) is a binary inorganic chemical compound of silicon with carbon. It is found in nature in the form of an extremely rare mineral - moissanite. The first silicon carbide powder was obtained in 1893. Used as abrasive, semiconductor, artificial gemstones. Most often, it was used as an abrasive, but recently you can find the use of this substance as a semiconductor or as a simulator of diamond jewelry quality.
  • Moissanite As a gemstone, silicon carbide is used in jewelry: it is called “synthetic moissanite” or simply “moissanite”. Moissanite is similar to diamond: it is transparent and solid (9–9.5 on the Mohs scale, compared to 10 for diamond), with a refractive index of 2.65–2.69 (compared to 2.42 for diamond). Moissanite has a slightly more complex structure than ordinary cubic zirconium. Unlike diamond, moissanite has strong birefringence. This quality may be desirable in some optical designs, but not in precious stones. For this reason, in the manufacture of jewelry stones, the crystal is cut along the optical axis in order to minimize the effect of two refractions.
  • Moissanite has a lower density of 3.21 g / cm 3 (versus 3.53 g / cm 3 for diamond) and is much more resistant to heat. The result is a stone with a strong shine, with clear edges and good resistance to external influences. Unlike diamond, which burns at a temperature of 800 ° C, moissanite remains intact up to a temperature of 1800 ° C (for comparison: 1064 ° C is the melting point of pure gold). Moissanite has become popular as a substitute for diamond, and may be mistaken for a diamond, since its thermal conductivity is much closer to diamond than any other diamond substitute. Faceted moissanite can be distinguished from diamond by its birefringence and very little green or yellow fluorescence in ultraviolet light. (O'Donoghue, M. Gems.— Elsevier.— 2006. — P.89.— ISBN 0-75-065856-8).
  • SiC for example, polycrystalline (RU 2327248 C 30 V 33/00, publ. 2005), as well as single crystals (RU2156330 SZOV 33/00, publ. 2000) are known.
  • the difference of the claimed method from all known is the simultaneous growth of several single crystals in graphite form with the achievement of a technical result - improving the quality of crystals. Also increasing productivity, since we refuse the cutting operation, immediately when growing, we obtain blanks, i.e. we reduce production costs and material losses during cutting.
  • the method for the simultaneous production of several faceted gems from synthetic silicon carbide - moissanite involves the simultaneous cultivation of many preforms of moissanite crystals in honeycomb form graphite, their separation into individual crystals and faceting, which includes three stages - grinding, grinding and polishing moreover, before cutting, an operation is carried out to sticker the blanks on the mandrel, and then to re-stick the blanks on their back side, and polishing is carried out by lamination of moissanite on a ceramic wheel rotating at a speed of 200 to 300 rpm, using a diamond spray with a grain size of 0, 125 to 0.45 ⁇ m, providing a depth of the patterns shorter than the light wavelength of the visible part of the spectrum, and chipped edges and blanks with defects unsuitable for cutting, crushed and returned to the growing stage.
  • a grinding paste with a grain size of 0.25 microns is used for grinding.
  • a method for simultaneously producing faceted stones from synthetic silicon carbide - moissanite is implemented as follows: at the same time, many blanks of moissanite crystals are grown in honeycomb form of forming graphite. Their division into individual crystals, faceting, grinding and polishing is carried out as follows: each workpiece is glued to a metal mandrel, its upper part is treated, then the other side is glued to another mandrel and the faceting, grinding and polishing operations are repeated for the remaining side. Workpieces on ceramic disks are polished at a rotation speed of 200-300 rpm using a diamond powder (spray) with a particle size of 0.125 - 0.25 ⁇ m, providing a depth of images less than the light wavelength of the visible part of the spectrum. Trimmed and chipped edges, as well as defective blanks unsuitable for cutting, are crushed and returned to the growing stage.
  • a diamond grinding paste with a grain size of 5-10 microns is used for grinding.
  • the method is illustrated by examples.
  • Cultivation is carried out in the cellular form of forming graphite at once of many preforms of moissanite crystals.
  • the grown crystals are divided into separate blanks.
  • a cut is carried out, which includes three stages - grinding, grinding and polishing, preliminary, the operation is carried out to glue the blanks on a special mandrel, and then to re-glue the blanks on their reverse side, they are processed.
  • Polishing is carried out by polishing moissanite on a steel wheel rotating at a speed of 200 rpm, using a grinding paste with a grain size of 0.25 ⁇ m, while the cut and chipped edges and blanks with defects, unsuitable for cutting, crushed and returned to the cultivation stage.
  • Cultivation is carried out in the cellular form of forming graphite at once of many preforms of moissanite crystals.
  • the grown crystals are divided into individual crystals.
  • an operation is carried out to glue the blanks on the base, and then to re-glue the blanks on their reverse side, they are faceted.
  • These moissanite preforms are processed on a steel wheel rotating at a speed of 280 rpm, using a grinding paste with a grain size of 0.45 ⁇ m, while the cut and chipped edges and blanks with defects unsuitable for cutting are crushed and returned to the growing stage.
  • Example 2 All techniques were used as in Example 2, but use a grinding paste with a grain size of 0.25 ⁇ m.
  • the obtained single crystals are suitable for jewelry purposes.
  • Diamonds are cut on heavy cast iron discs at a rotation speed of 3000 rpm or more, and both faceting and polishing occur on the same disc.
  • the process of cutting moissanite includes three stages - faceting, grinding and polishing, which are performed on various disks with a much lower rotation speed.
  • Obtaining faceted jewelry inserts using the described method involves several stages.
  • the initial sample of the material silicon carbide if necessary, is subjected to rough processing (grinding).
  • This treatment is carried out on abrasive disks with a grain size of 20 to 100 microns, depending on the size of the workpiece and the amount of material to be ground.
  • the future faceted insert gets its shape.
  • optional intermediate processing can be performed when the edges of the insert are reduced more accurately on grinding or cutting edges with an abrasive grain size of 3 to 10 microns.
  • Finer grinding according to the proposed method - polishing the surface of the faces of faceted inserts is carried out using fine-grained abrasive materials with a grain size of 0.125 - 0.5 ⁇ m, to prevent the appearance of numerous scratches, comparable in depth with the light wavelength of the visible part of the spectrum. This is a difference from conventional technology, in which an abrasive with a grain size of 0.5 to 3 microns is used for polishing.
  • the speed of rotation of the polishing disk should be low (about 200-300 rpm), and the force of the insert to the surface of the disk should be small, so as to exclude rounding of the ribs and curvature of the plane of the surface of the faces.
  • the listed stages are performed for all faces of one side of the insert (top or bottom), then they are repeated for the other side.
  • abrasive powder powder, paste, emulsion, etc.
  • grains of diamond, metal oxides, or other solid materials with a size of 0.5 ⁇ m or more
  • the faceted inserts obtained by the proposed method are polished with abrasive powders with a grain size from 0.125 to 0.25 ⁇ m, which, if the polishing technology is followed, gives the required surface cleanliness (corresponds to 1 to 1 class of cleanliness according to GOST 2789-59) and eliminates the dispersion of light flux.
  • the light incident on the surface of the face is either reflected or enters and, being refracted, participates in the internal reflection, contributing to the manifestation of the effect of star fire.
  • the depth of the images is less than the wavelength of the visible part of the spectrum (0.4 ⁇ m)
  • these risks do not significantly affect the course of the incident rays.
  • the stream of light falling on them slightly diffuses, and color flashes (play of light, brilliance) become less noticeable.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Adornments (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

L'invention se rapporte au domaine de la croissance et du traitement de monocristaux. Le carbure de silicium obtenu par ce procédé peut être utilisé non seulement dans l'industrie électronique ou en joaillerie, mais aussi en qualité de verre ou pour des boîtiers de montres. Ce procédé consiste à faire croître simultanément plusieurs ébauches de cristaux de moissanite de forme cellulaire de graphite de formation, puis à les séparer en cristaux distincts, à les tailler, à les façonner et à les polir. Avant la taille, le façonnage et le polissage, on procède à une opération d'étiquetage des ébauches sur un support, puis de ré-étiquetage des ébauches sur leur côté opposé. Le polissage se fait en polissant la moissanite sur une meule céramique tournant à une vitesse de 200 à 300 tours/minute, en utilisant de la poudre de diamant (pulvérisation) dont la taille des grains varie de 0,125 à 0,45 micromètres, et en s'assurant que la profondeur des capillaires soit inférieure à la longueur de l'onde lumineuse de la partie visible du spectre. Les arêtes coupées et ébréchées ainsi que les ébauches présentant des défauts et non aptes à la taille sont broyées et renvoyées à l'étape de croissance.
PCT/RU2011/000627 2010-10-28 2011-08-18 Procédé de production de pierres précieuses à partir de carbure de silicium WO2012057651A1 (fr)

Priority Applications (11)

Application Number Priority Date Filing Date Title
JP2013536555A JP2014506138A (ja) 2010-10-28 2011-08-18 シリコンカーバイドから宝石を製造するための方法
US13/519,651 US20120298092A1 (en) 2010-10-28 2011-08-18 Method for producing gemstones from silicon carbide
CN2011800517775A CN103314139A (zh) 2010-10-28 2011-08-18 采用碳化硅生产宝石的方法
EP11836702.8A EP2634295A1 (fr) 2010-10-28 2011-08-18 Procédé de production de pierres précieuses à partir de carbure de silicium
CA2816447A CA2816447A1 (fr) 2010-10-28 2011-08-18 Procede de production de pierres precieuses a partir de carbure de silicium
KR1020137013632A KR20140037013A (ko) 2010-10-28 2011-08-18 실리콘 카바이드로부터 준보석을 제조하는 방법
BR112013010205A BR112013010205A2 (pt) 2010-10-28 2011-08-18 método para produzir pedras preciosas lapidadas a partir de carboneto de silício
EA201300509A EA201300509A1 (ru) 2010-10-28 2011-08-18 Способ получения драгоценных камней из карбида кремния
AU2011321040A AU2011321040A1 (en) 2010-10-28 2011-08-18 Method for producing gemstones from silicon carbide
IL225960A IL225960A0 (en) 2010-10-28 2013-04-25 A method for exporting a variety of polished gemstones, simultaneously, from synthetic silicon carbide - moissanite
MA35931A MA34679B1 (fr) 2010-10-28 2013-05-23 Procédé de production de pierres précieuses à partir de carbure de silicium

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
RU2010144123 2010-10-28
RU2010144123/05A RU2434083C1 (ru) 2010-10-28 2010-10-28 Способ одновременного получения нескольких ограненных драгоценных камней из синтетического карбида кремния - муассанита

Publications (1)

Publication Number Publication Date
WO2012057651A1 true WO2012057651A1 (fr) 2012-05-03

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PCT/RU2011/000627 WO2012057651A1 (fr) 2010-10-28 2011-08-18 Procédé de production de pierres précieuses à partir de carbure de silicium

Country Status (13)

Country Link
US (1) US20120298092A1 (fr)
EP (1) EP2634295A1 (fr)
JP (1) JP2014506138A (fr)
KR (1) KR20140037013A (fr)
CN (1) CN103314139A (fr)
AU (1) AU2011321040A1 (fr)
BR (1) BR112013010205A2 (fr)
CA (1) CA2816447A1 (fr)
EA (1) EA201300509A1 (fr)
IL (1) IL225960A0 (fr)
MA (1) MA34679B1 (fr)
RU (1) RU2434083C1 (fr)
WO (1) WO2012057651A1 (fr)

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US9919972B2 (en) * 2013-05-02 2018-03-20 Melior Innovations, Inc. Pressed and self sintered polymer derived SiC materials, applications and devices
RU2547260C1 (ru) * 2013-12-27 2015-04-10 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Российский государственный педагогический университет им. А.И. Герцена" Композиция для чистки поверхности мягких и пористых полудрагоценных камней
CN108523329A (zh) * 2018-02-07 2018-09-14 上海黛恩妠珠宝有限公司 一种碳硅石圆钻
CN109911899B (zh) * 2019-03-07 2023-01-03 江苏超芯星半导体有限公司 一种无色莫桑石的制备方法

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Also Published As

Publication number Publication date
IL225960A0 (en) 2013-06-27
EA201300509A1 (ru) 2013-08-30
EP2634295A1 (fr) 2013-09-04
CN103314139A (zh) 2013-09-18
US20120298092A1 (en) 2012-11-29
AU2011321040A1 (en) 2013-06-06
MA34679B1 (fr) 2013-11-02
BR112013010205A2 (pt) 2019-09-24
CA2816447A1 (fr) 2012-05-03
RU2434083C1 (ru) 2011-11-20
JP2014506138A (ja) 2014-03-13
KR20140037013A (ko) 2014-03-26

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