MA34679B1 - Procédé de production de pierres précieuses à partir de carbure de silicium - Google Patents
Procédé de production de pierres précieuses à partir de carbure de siliciumInfo
- Publication number
- MA34679B1 MA34679B1 MA35931A MA35931A MA34679B1 MA 34679 B1 MA34679 B1 MA 34679B1 MA 35931 A MA35931 A MA 35931A MA 35931 A MA35931 A MA 35931A MA 34679 B1 MA34679 B1 MA 34679B1
- Authority
- MA
- Morocco
- Prior art keywords
- polishing
- size
- silicon carbide
- growth
- crystals
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- A—HUMAN NECESSITIES
- A44—HABERDASHERY; JEWELLERY
- A44C—PERSONAL ADORNMENTS, e.g. JEWELLERY; COINS
- A44C17/00—Gems or the like
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/12—Production of homogeneous polycrystalline material with defined structure directly from the gas state
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Adornments (AREA)
- Carbon And Carbon Compounds (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Abstract
L'INVENTION SE RAPPORTE AU DOMAINE DE LA CROISSANCE ET DU TRAITEMENT DE MONOCRISTAUX. LE CARBURE DE SILICIUM OBTENU PAR CE PROCÉDÉ PEUT ÊTRE UTILISÉ NON SEULEMENT DANS L'INDUSTRIE ÉLECTRONIQUE OU EN JOAILLERIE, MAIS AUSSI EN QUALITÉ DE VERRE OU POUR DES BOÎTIERS DE MONTRES. CE PROCÉDÉ CONSISTE À FAIRE CROÎTRE SIMULTANÉMENT PLUSIEURS ÉBAUCHES DE CRISTAUX DE MOISSANITE DE FORME CELLULAIRE DE GRAPHITE DE FORMATION, PUIS À LES SÉPARER EN CRISTAUX DISTINCTS, À LES TAILLER, À LES FAÇONNER ET À LES POLIR. AVANT LA TAILLE, LE FAÇONNAGE ET LE POLISSAGE, ON PROCÈDE À UNE OPÉRATION D'ÉTIQUETAGE DES ÉBAUCHES SUR UN SUPPORT, PUIS DE RÉ-ÉTIQUETAGE DES ÉBAUCHES SUR LEUR CÔTÉ OPPOSÉ. LE POLISSAGE SE FAIT EN POLISSANT LA MOISSANITE SUR UNE MEULE CÉRAMIQUE TOURNANT À UNE VITESSE DE 200 À 300 TOURS/MINUTE, EN UTILISANT DE LA POUDRE DE DIAMANT (PULVÉRISATION) DONT LA TAILLE DES GRAINS VARIE DE 0,125 À 0,45 MICROMÈTRES, ET EN S'ASSURANT QUE LA PROFONDEUR DES CAPILLAIRES SOIT INFÉRIEURE À LA LONGUEUR DE L'ONDE LUMINEUSE DE LA PARTIE VISIBLE DU SPECTRE. LES ARÊTES COUPÉES ET ÉBRÉCHÉES AINSI QUE LES ÉBAUCHES PRÉSENTANT DES DÉFAUTS ET NON APTES À LA TAILLE SONT BROYÉES ET RENVOYÉES À L'ÉTAPE DE CROISSANCE.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
RU2010144123/05A RU2434083C1 (ru) | 2010-10-28 | 2010-10-28 | Способ одновременного получения нескольких ограненных драгоценных камней из синтетического карбида кремния - муассанита |
PCT/RU2011/000627 WO2012057651A1 (fr) | 2010-10-28 | 2011-08-18 | Procédé de production de pierres précieuses à partir de carbure de silicium |
Publications (1)
Publication Number | Publication Date |
---|---|
MA34679B1 true MA34679B1 (fr) | 2013-11-02 |
Family
ID=45316702
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MA35931A MA34679B1 (fr) | 2010-10-28 | 2013-05-23 | Procédé de production de pierres précieuses à partir de carbure de silicium |
Country Status (13)
Country | Link |
---|---|
US (1) | US20120298092A1 (fr) |
EP (1) | EP2634295A1 (fr) |
JP (1) | JP2014506138A (fr) |
KR (1) | KR20140037013A (fr) |
CN (1) | CN103314139A (fr) |
AU (1) | AU2011321040A1 (fr) |
BR (1) | BR112013010205A2 (fr) |
CA (1) | CA2816447A1 (fr) |
EA (1) | EA201300509A1 (fr) |
IL (1) | IL225960A0 (fr) |
MA (1) | MA34679B1 (fr) |
RU (1) | RU2434083C1 (fr) |
WO (1) | WO2012057651A1 (fr) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2467099C1 (ru) * | 2011-12-13 | 2012-11-20 | Виктор Анатольевич Тузлуков | Способ огранки мягкого ювелирного материала, например жемчуга, с высокоточной полировкой на свободном абразиве |
US9919972B2 (en) * | 2013-05-02 | 2018-03-20 | Melior Innovations, Inc. | Pressed and self sintered polymer derived SiC materials, applications and devices |
RU2547260C1 (ru) * | 2013-12-27 | 2015-04-10 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Российский государственный педагогический университет им. А.И. Герцена" | Композиция для чистки поверхности мягких и пористых полудрагоценных камней |
CN108523329A (zh) * | 2018-02-07 | 2018-09-14 | 上海黛恩妠珠宝有限公司 | 一种碳硅石圆钻 |
CN109911899B (zh) * | 2019-03-07 | 2023-01-03 | 江苏超芯星半导体有限公司 | 一种无色莫桑石的制备方法 |
Family Cites Families (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1637291A (en) * | 1923-10-06 | 1927-07-26 | Leon H Barnett | Method of producing gem materials |
US3317035A (en) * | 1963-09-03 | 1967-05-02 | Gen Electric | Graphite-catalyst charge assembly for the preparation of diamond |
BE693619A (fr) * | 1966-02-11 | 1967-07-17 | ||
US3423177A (en) * | 1966-12-27 | 1969-01-21 | Gen Electric | Process for growing diamond on a diamond seed crystal |
US3774347A (en) * | 1972-05-09 | 1973-11-27 | E Marshall | Grinding machine for gems |
SU645505A1 (ru) * | 1976-03-01 | 1980-02-05 | Всесоюзный Научно-Исследовательский Институт Абразивов И Шлифования | Способ получени синтетических алмазов |
US4075055A (en) * | 1976-04-16 | 1978-02-21 | International Business Machines Corporation | Method and apparatus for forming an elongated silicon crystalline body using a <110>{211}orientated seed crystal |
US4237085A (en) * | 1979-03-19 | 1980-12-02 | The Carborundum Company | Method of producing a high density silicon carbide product |
US4532737A (en) * | 1982-12-16 | 1985-08-06 | Rca Corporation | Method for lapping diamond |
US5958132A (en) * | 1991-04-18 | 1999-09-28 | Nippon Steel Corporation | SiC single crystal and method for growth thereof |
US5293858A (en) * | 1992-03-30 | 1994-03-15 | Peters Nizam U | Apparatus and method for cone shaping the crown and pavilion of gemstones |
US5614019A (en) * | 1992-06-08 | 1997-03-25 | Air Products And Chemicals, Inc. | Method for the growth of industrial crystals |
US5443032A (en) * | 1992-06-08 | 1995-08-22 | Air Products And Chemicals, Inc. | Method for the manufacture of large single crystals |
US5441011A (en) * | 1993-03-16 | 1995-08-15 | Nippon Steel Corporation | Sublimation growth of single crystal SiC |
JPH07108007A (ja) * | 1993-10-13 | 1995-04-25 | Daiwa Kako Kk | 装飾品 |
US5558564A (en) * | 1993-10-22 | 1996-09-24 | Ascalon; Adir | Faceting machine |
US5503592A (en) * | 1994-02-02 | 1996-04-02 | Turbofan Ltd. | Gemstone working apparatus |
US5458827A (en) * | 1994-05-10 | 1995-10-17 | Rockwell International Corporation | Method of polishing and figuring diamond and other superhard material surfaces |
US7465219B2 (en) * | 1994-08-12 | 2008-12-16 | Diamicron, Inc. | Brut polishing of superhard materials |
US5762896A (en) * | 1995-08-31 | 1998-06-09 | C3, Inc. | Silicon carbide gemstones |
US5882786A (en) * | 1996-11-15 | 1999-03-16 | C3, Inc. | Gemstones formed of silicon carbide with diamond coating |
US6048813A (en) * | 1998-10-09 | 2000-04-11 | Cree, Inc. | Simulated diamond gemstones formed of aluminum nitride and aluminum nitride: silicon carbide alloys |
US6045613A (en) * | 1998-10-09 | 2000-04-04 | Cree, Inc. | Production of bulk single crystals of silicon carbide |
US7553373B2 (en) * | 2001-06-15 | 2009-06-30 | Bridgestone Corporation | Silicon carbide single crystal and production thereof |
TWI229897B (en) | 2002-07-11 | 2005-03-21 | Mitsui Shipbuilding Eng | Large-diameter sic wafer and manufacturing method thereof |
KR100782998B1 (ko) * | 2003-06-16 | 2007-12-07 | 쇼와 덴코 가부시키가이샤 | 실리콘 카바이드 단결정의 성장 방법, 실리콘 카바이드 씨드결정 및 실리콘 카바이드 단결정 |
US8114505B2 (en) * | 2003-12-05 | 2012-02-14 | Morgan Advanced Ceramics, Inc. | Free-standing silicon carbide articles formed by chemical vapor deposition and methods for their manufacture |
DE102005004038A1 (de) * | 2005-01-27 | 2006-08-03 | Guilleaume-Werk Gmbh | Verfahren und Vorrichtung zum Schleifen von keramischen Kugeln |
IL168588A (en) * | 2005-05-15 | 2010-06-30 | Sarin Polishing Technologies L | Apparatus and article for polishing gemstones |
US7553344B2 (en) * | 2005-06-07 | 2009-06-30 | Adico, Asia Polydiamond Company, Ltd. | Shaped thermally stable polycrystalline material and associated methods of manufacture |
US7238088B1 (en) * | 2006-01-05 | 2007-07-03 | Apollo Diamond, Inc. | Enhanced diamond polishing |
CN100467679C (zh) * | 2007-04-20 | 2009-03-11 | 山东大学 | 彩色碳硅石单晶及其制备方法与人造宝石的制备 |
-
2010
- 2010-10-28 RU RU2010144123/05A patent/RU2434083C1/ru not_active IP Right Cessation
-
2011
- 2011-08-18 CA CA2816447A patent/CA2816447A1/fr not_active Abandoned
- 2011-08-18 JP JP2013536555A patent/JP2014506138A/ja not_active Withdrawn
- 2011-08-18 CN CN2011800517775A patent/CN103314139A/zh active Pending
- 2011-08-18 EA EA201300509A patent/EA201300509A1/ru unknown
- 2011-08-18 WO PCT/RU2011/000627 patent/WO2012057651A1/fr active Application Filing
- 2011-08-18 US US13/519,651 patent/US20120298092A1/en not_active Abandoned
- 2011-08-18 KR KR1020137013632A patent/KR20140037013A/ko not_active Application Discontinuation
- 2011-08-18 EP EP11836702.8A patent/EP2634295A1/fr not_active Withdrawn
- 2011-08-18 BR BR112013010205A patent/BR112013010205A2/pt not_active IP Right Cessation
- 2011-08-18 AU AU2011321040A patent/AU2011321040A1/en not_active Abandoned
-
2013
- 2013-04-25 IL IL225960A patent/IL225960A0/en unknown
- 2013-05-23 MA MA35931A patent/MA34679B1/fr unknown
Also Published As
Publication number | Publication date |
---|---|
EA201300509A1 (ru) | 2013-08-30 |
IL225960A0 (en) | 2013-06-27 |
WO2012057651A1 (fr) | 2012-05-03 |
US20120298092A1 (en) | 2012-11-29 |
KR20140037013A (ko) | 2014-03-26 |
JP2014506138A (ja) | 2014-03-13 |
BR112013010205A2 (pt) | 2019-09-24 |
RU2434083C1 (ru) | 2011-11-20 |
CN103314139A (zh) | 2013-09-18 |
AU2011321040A1 (en) | 2013-06-06 |
CA2816447A1 (fr) | 2012-05-03 |
EP2634295A1 (fr) | 2013-09-04 |
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