WO2012050461A1 - Oscillateur à petit facteur de forme - Google Patents

Oscillateur à petit facteur de forme Download PDF

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Publication number
WO2012050461A1
WO2012050461A1 PCT/NZ2011/000139 NZ2011000139W WO2012050461A1 WO 2012050461 A1 WO2012050461 A1 WO 2012050461A1 NZ 2011000139 W NZ2011000139 W NZ 2011000139W WO 2012050461 A1 WO2012050461 A1 WO 2012050461A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
oscillator
circuitry
die
conductive element
Prior art date
Application number
PCT/NZ2011/000139
Other languages
English (en)
Inventor
Brent John Robinson
Darren Paul Robinson
Original Assignee
Rakon Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rakon Limited filed Critical Rakon Limited
Publication of WO2012050461A1 publication Critical patent/WO2012050461A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H01L23/055—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads having a passage through the base
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0547—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0547—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
    • H03H9/0557—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement the other elements being buried in the substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
    • H03H9/1014—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
    • H03H9/1021—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device the BAW device being of the cantilever type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the invention relates to small form factor oscillators and in particular to integrating a resonating element with a semiconductor integrated circuit to form a small form factor oscillator.
  • Product miniturisation is one of the key factors that drives product development in quartz crystal oscillators.
  • the current state of the art technology employs an aluminium oxide ceramic packaging to house the die and resonating element.
  • the circuit interconnections are either wire bonded or flip-chip bonded to connect the die to the ceramic tracking and outside world.
  • ceramic surface mount packages have been the mainstream packaging choice. Whilst many advancements in footprint and height reduction have been made in this area, further rrumaturization progress is increasingly impeded as limitations of this technology are approached.
  • the invention may broadly be said to consist of an oscillator comprising:
  • an integrated circuit die having a semiconducting substrate and circuitry formed on the substrate
  • the circuitry, the at least one conductive element and the resonating element are electrically connected to at least one other of the ckcuitry, the at least one conductive element and the resonating element, and wherein at least one of the electrical connections is achieved through a conducting via traversing through the substrate of the die.
  • the semiconducting substrate is a silicon substrate and each substrate via is a through silicon via (TSV).
  • the resonating element is a quartz crystal resonating element.
  • the substrate has a base portion and a wall portion extending from the base portion to form a cavity having an opening at the end of the wall portion, the resonating element being mounted within the cavity of the substrate, and the oscillator further comprising a cap element that covers the opening of the cavity to form an enclosed housing for the resonating element
  • the at least one conductive element is positioned on an outer surface of the base portion of the substrate.
  • the resonating element is mounted on the base portion of the substrate.
  • the circuitry is formed on an opposite surface of the base portion on which the at least one conductive element is positioned, and the at least one conductive element and the circuitry are connected via at least one TSV traversing through the base portion of the substrate of the die.
  • the circuitry is formed on the surface of the base portion on which the at least one conductive element is positioned, and the at least one conductive element or the circuitry or both are connected to the resonating element via at least one TSV traversing through the base portion of the substrate of the die.
  • the circuitry is directly connected to the at least one conductive element.
  • the resonating element is mounted on a surface of the cap element.
  • the ckcuitry is formed on an opposed surface of the base portion on which the at least one conductive element is positioned, and the at least one conductive element is connected to the circuitry via at least one TSV traversing through the base portion of the substrate of the die, and the circuitry is connected to the resonating element via at least one TSV traversing through the wall portion of the substrate of the die.
  • the drcuitry is formed on the surface of the base portion on which the at least one conductive element is positioned, and the at least conductive element or the circuitry or both are connected to the resonating element via at least one TSV traversing through the wall portion of the substrate of the die.
  • the circuitry is directly connected to the at least one conductive element.
  • the oscillator further comprises a cap element having a base portion and a wall portion extending from the base portion to form a cavity having an opening at the end of the wall portion, the resonating element mounted within the cavity of the cap element and the substrate of the die covering the opening of the cap element to form an enclosed housing for the resonating element.
  • the resonating element is mounted on a surface of the substrate of the die.
  • the circuitry is formed on the surface of the substrate to which the resonating element is mounted.
  • the at least one conductive element is positioned on an opposed surface of the substrate on which the circuitry is formed and the at least one conductive element is connected to the circuitry or the resonating element or both via at least one TSV traversing through the substrate of the die.
  • the at least one conductive element is positioned on an exposed surface of the base portion of the cap element and the circuitry or the resonating element or both are connected to the at least one conductive element via at least one TSV traversing through the wall portion of the cap element.
  • the resonating element is mounted on a surface of the base portion of the cap element.
  • the at least one conductive element is positioned on an exposed surface of the substrate of the die.
  • the circuitry is formed on an opposed surface of the substrate on which the at least one conductive element is positioned, and the at least one conductive element is connected to the circuitry via at least one TSV traversing through the substrate of the die, and the ckcuitry is connected to the resonating element via at least one TSV traversing through the wall portion of the cap element.
  • the circuitry is formed on the surface of the substrate on which the at least one conductive element is positioned, and the at least one conductive element or the circuitry or both are connected to the resonating element via at least one TSV traversing through the wall portion of the cap element.
  • the oscillator further comprises a second substrate mounted on the substrate of the die at an outer surface of the substrate, and the resonating element being contained within an enclosed housing of the second substrate and electrically connected to the outer surface of the substrate of the die.
  • the at least one conductive element is positioned on an opposed surface to the outer surface to which the second substrate is mounted.
  • the circuitry is formed on the surface of the die on which the at least one conductive element is positioned and the at least one conductive element or the circuitry is connected to the resonating element via at least one TSV traversing through the substrate of the die to the outer surface of the die where the second substrate is mounted.
  • the ckcuitry is formed on die outer surface of the die onto which the second substrate is mounted and the at least one conductive element is connected to the ckcuitry via at least one TSV traversing through the substrate of the die.
  • the enclosed housing hermetically seals the resonating element.
  • a sealing element may be used in between the cap element and the substrate of the die.
  • Figure 1 shows a first embodiment of the invention
  • Figure 2 shows a second embodiment of the invention
  • Figure 3 shows a third embodiment of the invention
  • Figure 4 shows a fourth embodiment of the invention
  • Figure 5 shows a fifth embodiment of the invention
  • Figure 6 shows a sixth embodiment of the invention
  • Figure 7 shows a seventh embodiment of the invention
  • Figure 8 shows an eighth embodiment of the invention
  • Figure 9 shows a ninth embodiment of the invention
  • Figure 10 shows a tenth embodiment of the invention.
  • an oscillator comprises a resonating element, electronic circuitry for mamtaining oscillation and electrically conductive elements for providing a user access to the oscillator signals.
  • the resonating element, the circuitry and the conductive elements are electrically connected to at least one other of the resonator, circuit or conductive element.
  • the invention integrates the resonating element with the integrated circuit die, or the substrate that the integrated electronic circuitry is formed on. The substrate forms part of the resonator package thereby reducing the size of the oscillator. This invention is for the purpose of form factor reduction and cost reduction.
  • the integrated circuit (IC) is formed on the semiconducting substrate of the die and either directly or indirectly connected to one or more package pads or pins (i.e.
  • the electrically conductive elements hereinafter referred to as pads
  • the package pads provide access to the oscillator signals.
  • the substrate and a capping element create a cavity to encase the resonating element and provide a hermetic environment for the resonating element.
  • the resonating element is also either directly or indirectly connected to the IC and the package pads.
  • At least one via traversing through the semiconductor substrate is used to connect any two or more of the IC, the resonating element and the package pads.
  • One or more conducting vias such as through silicon vias (TSVs), traversing through the major plane of the substrate from one surface of the substrate to the other enable an electrical connection to be made between two elements on surfaces either side of the substrate.
  • TSVs through silicon vias
  • Vias are therefore utilised to provide at least one of the electrical connections between the resonating element, the IC ckcviitry and/or the package pads.
  • Utilisation of vias through the substrate enables the IC circuitry to connect to the resonating element and/or the outside world.
  • the substrate type of the IC die although typically silicon is not intended to be limited to such material and other known semiconducting materials for forming ICs, such as SiGe or GaAs can be used as required by die particular application. Therefore the via type is also not intended to be limited to dirough silicon vias.
  • the essential feature of the via is that it traverses through the semiconducting substrate of the IC to provide an electrical connection between two elements on opposite surfaces of the IC.
  • the oscillator structure comprises a silicon substrate 2 and an integrated oscillator circuit 1 formed on the substrate 2.
  • the silicon substrate 2 provides the packaging and a cavity 3 for housing the resonating element 4.
  • the substrate 2 therefore has a U-shaped cross-section as shown in figure 1 with a base portion 2a and a wall portion 2b, extending from the base portion 2a.
  • the resonating element 4 can be a crystal resonator, a ceramic resonator, a silicon resonator, or of any other type.
  • the resonating element 4 is mounted within the cavity 3 on a surface 2c of the base portion 2a of substrate 2, by any one of the known conventional mounting methods, for example using conductive glue 9.
  • the oscillator circuit 1 is formed in the surface 2c of substrate 2.
  • One or more conductive pads or tracks 5 connect the resonating element 4 to the oscillator ckcuitry 1.
  • pads or tracks can be metal deposits on the floor of the cavity, and can be formed in any shape or form as part of the IC fabrication process.
  • a cap element or lid 8 covers the opening of the cavity 3 to form an enclosed housing for the resonating element 4. Therefore, the substrate 2, as well as having the integrated circuit 1 formed thereon, has a secondary function to provide the required (preferably hermetic) cavity 3 for housing (in conjunction with the cap 8) the resonating element 4.
  • a sealing element such as a ring pad 11 may be placed on top of the wall portion 2b (i.e. on the top surface of substrate 2 and on top of the cavity wall) to achieve a seal between the cap element 8 and the opening of the cavity 3 in substrate 2 onto which the cap element 8 sits.
  • the ring pad 11 can be made of any material suitable for maintaining a hermetic seal to provide the resonating element 4 with a hermetic environment in which it operates.
  • Package pad(s) 7 located on the surface 2d of substrate 2 act as user interface pad(s) and connects) to the oscillator circuit 1 (integrated on an opposed surface of the substrate on which the pad(s) are positioned) by utilising at least one TSV 6 traversing through the substrate of the die (from the surface 2d to the surface 2c of the substrate 2).
  • the TSVs are electrically conductive and form a sufficiendy low impedance connection between the user pads 7 and the oscillator circuit 1.
  • Figure 2 shows a second embodiment of the invention.
  • the substrate 2 still has an integrated circuit 1 formed therein, however in this case it is a substantially flat substrate 2 without a cavity, i.e. the substrate 2 only contains a base portion 2a and no wall portion as in the first embodiment.
  • Cap element 8 is formed with a cavity 3 instead for housing the resonating element 4 (in conjunction with the substrate 2) between the cap 8 and the substrate 2.
  • Cap element 8 in this embodiment is therefore formed with a U-shaped cross section as shown.
  • the cap element 8 comprises a base portion 8a and a wall portion 8b extending from the base 8a.
  • the end of the wall portion 8b (distal from base potion 8a) is mounted onto a surface 2c of the substrate 2 onto which the resonating element 4 is mounted with a bonding material 9 (e.g. conductive glue).
  • the integrated oscillator circuitry 1 is formed on the surface onto which the resonating element 4 is mounted and one or more conductive pads 5 connect the resonating element 4 to the circuit 1.
  • Seals 11 may be used between the end of the wall portion 8b and the surface 2c of substrate 2 to aid in creating a hermetic environment for the resonating element 4.
  • User interface pads 7 located on the outer surface 2d of substrate 2 connect to the oscillator circuit 1 by utilising at least one TSV 6 through the substrate of the die, from the surface 2d to the surface 2c of the substrate 2.
  • Figure 3 shows a third embodiment, in which the structure of the oscillator is the same as in the first embodiment in that the substrate 2 defines a cavity 3 that is covered by a cap element 8 extending across the opening of the cavity 3, and the cavity 3 in conjunction with cap element 8 forms a housing for resonating element 4.
  • the resonating element 4 in this embodiment is mounted on a surface 8d of the cap element 8.
  • the oscillator integrated circuit 1 is formed on surface 2c of substrate 2 and the resonating element 4 is connected to the oscillator circuit 1 via one or more pads 5 extending along the surface 8d of cap 8 to one or more TSVs 6a extending from where surface 8d meets the end of wall portion 2b, along wall portion 2b direcdy to the oscillator circuit 1 or connecting to oscillator circuit 1 via one or more pads 5 extending from the wall portion 2b along surface 2c of substrate 2.
  • TSVs 6b extending across the base portion 2a of substrate 2 connect the pad(s) 7 on surface 2d to oscillator circuit 1 on surface 2c of substrate 2.
  • Figure 4 shows a fourth embodiment of the invention, which can be considered a hybrid between the second and third embodiment.
  • the structure of the oscillator is the same as that of the second embodiment where the cap element 8 is U-shaped and forms a cavity 3 for housing the resonating element 4 (in conjunction with a substantially flat substrate 2 that contains the integrated oscillator circuit 1 and covers the opening of the cavity 3).
  • the resonating element 4 is mounted on a surface 8c of the base portion 8a of the cap element 8.
  • One or more pads 5 extend along the surface 8c to connect to one or more TSVs 6a through and along the wall portion 8b of the cap element 8.
  • the TSVs 6a connect direcdy to the oscillator circuit 1 at surface 2c of substrate 2 or indirecdy via one or more pads 5.
  • TSV s 6b extend across the substrate 2 and connect the pad(s) 7 to oscillator circuit 1.
  • Figure 5 shows a fifth embodiment of the invention which is the same as the second embodiment except the pads(s) 7 are located on an outer surface 8d of the base 8a of the cap element 8.
  • One or more TSVs 6a extend through and along the wall portion 8b of the cap element 8 to connect the pads(s) 7 to the oscillator circuit 1.
  • One or more pads 5 connect the TSVs 6a to the oscillator circuit 1.
  • Figures 6, 7 and 8 illustrate embodiments in which the oscillator integrated circuit 1 is formed on the outer surface 2d of the base 2 on an opposing side to the cavity 3 containing the resonating element 4, Le. on the surface on which the user pad(s) 7 are positioned.
  • Figure 6 shows a sixth embodiment similar to the first except the oscillator integrated ckcuitry 1 is formed proximate the surface 2d of the base portion 2a of the substrate 2.
  • Oscillator circuit 1 therefore can be directly connected to pad(s) 7 on the surface 2d of substrate 2.
  • One or more TSVs 6 extend across and through the base portion 2a of substrate 2 and connect the pad(s) 7 to pads 5 and in turn to resonating element 4 mounted on the surface 2c of substrate 2.
  • Figure 7 shows a seventh embodiment of the invention. This embodiment is similar to the first except the oscillator circuit 1 is formed proximate the surface 2d of the base portion 2a of the substrate 2. Oscillator circuit 1 therefore can be directly connected to user pad(s) 7 on the surface 2d of substrate 2. One or more TSVs 6 extending along and through wall portion 2b of substrate 2 connect the pad(s) 7 to pads 5 and in turn to resonating element 4 mounted on die surface 8d of cap element 8.
  • Figure 8 shows an eighth embodiment which is similar to the third except the oscillator circuit 1 is formed proximate the surface 2d of the substrate 2. Oscillator circuit 1 therefore can be directly connected to user pad(s) 7 positioned on the surface 2d of substrate 2. One or more TSVs 6 extending across and through substrate 2 and then wall portion 8b of cap 8 connect the pad(s) 7 to pads 5 and in turn to resonating element 4 mounted on the surface 8c of base portion 8a of cap element 8.
  • Figures 9 and 10 illustrate embodiments of the invention in which the resonating element 4 is pre-packaged and integrated with the semiconductor substrate of the oscillator circuit by utilising TSV technology.
  • the main advantage of such configurations is that standard (pre-made and tested) self contained, packaged resonators can be used, thus eliminating the need to form and seal a cavity.
  • Figures 9 and 10 show the ninth and tenth embodiments respectively where the resonating element 4 (not shown) is housed within its own package to form a separately packaged resonator 20.
  • the packaged resonator 20 is mounted onto the semiconductor substrate 2 (having the oscillator circuit 1 formed thereon) and the resonating element 4 is electrically connected to an outer surface of the substrate 2 where the resonator package 20 is mounted.
  • the integrated oscillator circuitry 1 in Figure 9 is formed proximate surface 2d of the substrate 2 (i.e. at an opposed surface to the outer surface of the substrate which the packaged resonator 20 is mounted on).
  • Oscillator circuit 1 can therefore be direcdy connected to pads(s) 7 and one or more TSVs extend through and across substrate 2 to surface 2c where the packaged resonator 20 is mounted.
  • the packaged resonator has one or more output connections for connecting the resonating element 4 to the TSVs at surface 2c.
  • the integrated oscillator circuitry 1 in Figure 10 is formed proximate surface 2c of the substrate 2 (i.e. at the outer surface of die substrate which the packaged resonator 20 is mounted on). Oscillator circuit 1 can therefore be direcdy connected to the one or more output connections of the packaged resonator 20 for connecting the resonating element 4 to the oscillator circuit 1.
  • One or more TSVs extend through and across substrate 2 from the surface 2d where the pad(s) 7 are positioned to the surface 2c to connect to the oscillator circuit 1.
  • the oscillator circuit 1 can be formed on substrate 2 by any known IC fabrication method.
  • the integrated circuit 1 can be in some embodiments a CMOS circuit for example and can be used in applications such as, crystal oscillators (XO), temperature compensated crystal oscillators (TCXO), voltage controlled crystal oscillators (VCXO), and/or any other type of oscillator circuit.
  • the cavity 3 may be formed in the substrate 2 (having the oscillator circuit integrated thereon) as in embodiments 1, 3, 5, 6 and 7 or in the cap element 8 as in embodiments 2, 4 and 8.
  • the cap element 8 is made from a substrate material such as silicon to create the electrical connections required (as discussed above).
  • the cavity 3 can be formed through a number of different techniques.
  • An etch process (either wet or dry) that etches a cavity in a flat substrate can be used in one embodiment.
  • the etch process creates the etch pit of controlled geometry that forms the cavity.
  • the etch process can also be used to make the substrate wafer thinner (without affecting the circuitry 1) to further decrease the size of the package.
  • the cavity may be formed by bonding a second wafer (with holes already formed in the wafer) to the substrate wafer using laminate wafer bonding techniques. This creates a laminated wafer with pockets structure that can be cut to form one or more substrates having a cavity.
  • the cavity 3 can be any other suitable method for forming the cavity 3 provided the height, width and depth dimensions are sufficient to contain the resonating element 4.
  • the cavity also preferably provides a hermetic and clean environment for the resonator.
  • the cavity may be formed by any one skilled in any one of the respective technology areas described above.
  • the cavity may be formed into any shape suitable for the application, and can be rectangular in cross section (as in the above embodiments) or semi-circular for example.
  • the cap element 8 for enclosing the cavity 3 can be fabricated from a number of different suitable materials.
  • the element 8 is formed as a metal stamped or etched cap, either flat or shaped in some manner (such as in embodiments 2, 4 and 8 for example).
  • the element 8 is formed as a silicon cap 8, either flat or with a cavity (as discussed above).
  • the element 8 is formed as a glass lid 8 or from similar material (either flat or with a cavity).
  • the cap or lid 8 forms a protective, hermetic environment after sealing.
  • the seal 11 can be made by using any suitable material(s) or method(s) such as: seam sealing, direct seam sealing, ebeam, hard Eutectic solder materals i.e. AuSn, AgSn, AuGe, AuSi, AuCu etc, soft eutectic solder seals, Frit seals or Epoxy seals.
  • TSVs 6 Through-silicon-vias (TSVs) 6 can be formed by any method known in the art. Two different approaches for forming TSVs are the via-first approach and the via-last approach.
  • the via-first approach forms the TSVs before the integrated circuit 1 is formed on the carrier substrate 2.
  • the via-last approach forms the TSVs after the integrated circuit 1 is formed on the substrate 2.
  • the TSVs 6 may be of the metal-filled type or the conductive silicon type for example.
  • the via forming method selected is dependent on the general package configuration.
  • the substrate and the cap / lid can be joined by either processing single units sequentially, or by batch processing, or by bonding a wafer of substrates with a wafer of caps / lids followed by dicing the bonded assembly into single oscillator units.
  • the user pad(s) 7 are preferably formed on the outer surface of any one of the substrates 2, 8 and 20 as described in relation to the above embodiments, but may alternatively be pre-formed and mounted, or otherwise positioned or located through any suitable method known in the art.

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Oscillators With Electromechanical Resonators (AREA)

Abstract

L'invention concerne un oscillateur comprenant une puce de circuit intégré comprenant un substrat semiconducteur et des circuits formés sur le substrat, au moins une pastille d'utilisateur sur une surface extérieure dudit substrat et un élément résonant étroitement associé audit substrat. L'invention intègre l'élément résonant avec la puce de circuit intégré ou avec le substrat sur lequel est formé le circuit électronique intégré. Le substrat fait partie du boîtier du résonateur, ce qui réduit la taille de l'oscillateur. Les circuits, ledit ou lesdits éléments conducteurs et l'élément résonant sont connectés électriquement par au moins un trou conducteur qui traverse le substrat de la puce, afin de réduire la taille de l'oscillateur.
PCT/NZ2011/000139 2010-07-20 2011-07-20 Oscillateur à petit facteur de forme WO2012050461A1 (fr)

Applications Claiming Priority (2)

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US36611210P 2010-07-20 2010-07-20
US61/366,112 2010-07-20

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WO2012050461A1 true WO2012050461A1 (fr) 2012-04-19

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110867509A (zh) * 2019-10-11 2020-03-06 中国电子科技集团公司第十三研究所 声学谐振器封装结构
JP2021136658A (ja) * 2020-02-28 2021-09-13 セイコーエプソン株式会社 振動デバイス、電子機器および移動体
JP2021168451A (ja) * 2020-04-10 2021-10-21 セイコーエプソン株式会社 振動デバイス、電子機器および移動体

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JP2001028516A (ja) * 1999-07-13 2001-01-30 Nippon Dempa Kogyo Co Ltd 圧電発振器
US20090115005A1 (en) * 2006-09-28 2009-05-07 Makoto Watanabe Semiconductor IC and manufacturing method of the same
JP2010135994A (ja) * 2008-12-03 2010-06-17 Nippon Dempa Kogyo Co Ltd 表面実装水晶発振器
CN201699666U (zh) * 2010-04-06 2011-01-05 台晶(宁波)电子有限公司 一种振子装置三维晶圆级封装结构

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001028516A (ja) * 1999-07-13 2001-01-30 Nippon Dempa Kogyo Co Ltd 圧電発振器
US20090115005A1 (en) * 2006-09-28 2009-05-07 Makoto Watanabe Semiconductor IC and manufacturing method of the same
JP2010135994A (ja) * 2008-12-03 2010-06-17 Nippon Dempa Kogyo Co Ltd 表面実装水晶発振器
CN201699666U (zh) * 2010-04-06 2011-01-05 台晶(宁波)电子有限公司 一种振子装置三维晶圆级封装结构

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110867509A (zh) * 2019-10-11 2020-03-06 中国电子科技集团公司第十三研究所 声学谐振器封装结构
JP2021136658A (ja) * 2020-02-28 2021-09-13 セイコーエプソン株式会社 振動デバイス、電子機器および移動体
JP7419877B2 (ja) 2020-02-28 2024-01-23 セイコーエプソン株式会社 振動デバイス、電子機器および移動体
JP2021168451A (ja) * 2020-04-10 2021-10-21 セイコーエプソン株式会社 振動デバイス、電子機器および移動体
JP7497604B2 (ja) 2020-04-10 2024-06-11 セイコーエプソン株式会社 振動デバイス、電子機器および移動体

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