WO2012047054A3 - 유기전자소자용 기판 및 그 제조방법 - Google Patents

유기전자소자용 기판 및 그 제조방법 Download PDF

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Publication number
WO2012047054A3
WO2012047054A3 PCT/KR2011/007432 KR2011007432W WO2012047054A3 WO 2012047054 A3 WO2012047054 A3 WO 2012047054A3 KR 2011007432 W KR2011007432 W KR 2011007432W WO 2012047054 A3 WO2012047054 A3 WO 2012047054A3
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WO
WIPO (PCT)
Prior art keywords
scattering
substrate
refractive index
layer
electronic element
Prior art date
Application number
PCT/KR2011/007432
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English (en)
French (fr)
Other versions
WO2012047054A2 (ko
Inventor
장성수
이연근
문경식
강민수
Original Assignee
주식회사 엘지화학
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 엘지화학 filed Critical 주식회사 엘지화학
Priority to US13/878,151 priority Critical patent/US9448339B2/en
Priority to JP2013532732A priority patent/JP5590754B2/ja
Priority to CN201180048190.9A priority patent/CN103155194B/zh
Priority to EP11830939.2A priority patent/EP2613374B1/en
Publication of WO2012047054A2 publication Critical patent/WO2012047054A2/ko
Publication of WO2012047054A3 publication Critical patent/WO2012047054A3/ko
Priority to US13/942,464 priority patent/US20130302565A1/en

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/02—Diffusing elements; Afocal elements
    • G02B5/0205—Diffusing elements; Afocal elements characterised by the diffusing properties
    • G02B5/021—Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place at the element's surface, e.g. by means of surface roughening or microprismatic structures
    • G02B5/0221—Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place at the element's surface, e.g. by means of surface roughening or microprismatic structures the surface having an irregular structure
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C30/00—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/814—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/854—Arrangements for extracting light from the devices comprising scattering means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
    • Y10T428/24364—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.] with transparent or protective coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
    • Y10T428/24372—Particulate matter
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
    • Y10T428/24372—Particulate matter
    • Y10T428/24413—Metal or metal compound
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
    • Y10T428/24372—Particulate matter
    • Y10T428/24421—Silicon containing

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Photovoltaic Devices (AREA)

Abstract

본 발명은 기재; 기재상에 형성되며, 전극의 면저항을 감소시키는 도전성 패턴, 광을 산란시키는 산란 입자 및 바인더를 포함하고, 또한 상기 기재와 반대면에는 요철구조를 형성하는 산란층; 및 산란층상에 형성되며, 산란층의 요철구조로 인한 표면 굴곡을 평탄화시키는 평탄층을 포함하고, 상기 산란 입자의 굴절율(Na) 및 평탄층의 굴절율(Nb)은 하기 수학식 1의 관계를 만족하는 유기전자소자용 기판에 관한 것으로서, 면저항 감소 및 광추출 효율 개선이 가능하다. [수학식 1] |Na-Nb|≥0.3 상기 식에서, Na는 산란 입자의 굴절율이고, Nb는 평탄층의 굴절율을 의미한다.
PCT/KR2011/007432 2010-10-07 2011-10-07 유기전자소자용 기판 및 그 제조방법 WO2012047054A2 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US13/878,151 US9448339B2 (en) 2010-10-07 2011-10-07 Substrate for an organic electronic element and a production method therefor
JP2013532732A JP5590754B2 (ja) 2010-10-07 2011-10-07 有機電子素子用基板、有機電子素子用基板の製造方法および有機電子装置
CN201180048190.9A CN103155194B (zh) 2010-10-07 2011-10-07 有机电子器件用衬底及其制造方法
EP11830939.2A EP2613374B1 (en) 2010-10-07 2011-10-07 Substrate for an organic electronic element and a production method therefor
US13/942,464 US20130302565A1 (en) 2010-10-07 2013-07-15 Substrate for an organic electronic element and a production method therefor

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2010-0097979 2010-10-07
KR20100097979 2010-10-07
KR10-2011-0046909 2011-05-18
KR1020110046909A KR101114352B1 (ko) 2010-10-07 2011-05-18 유기전자소자용 기판 및 그 제조방법

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US13/942,464 Continuation US20130302565A1 (en) 2010-10-07 2013-07-15 Substrate for an organic electronic element and a production method therefor

Publications (2)

Publication Number Publication Date
WO2012047054A2 WO2012047054A2 (ko) 2012-04-12
WO2012047054A3 true WO2012047054A3 (ko) 2012-06-07

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Country Status (6)

Country Link
US (2) US9448339B2 (ko)
EP (1) EP2613374B1 (ko)
JP (1) JP5590754B2 (ko)
KR (1) KR101114352B1 (ko)
CN (1) CN103155194B (ko)
WO (1) WO2012047054A2 (ko)

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KR20130108026A (ko) 2012-03-23 2013-10-02 주식회사 엘지화학 유기발광소자
JP2015530700A (ja) 2012-07-31 2015-10-15 エルジー・ケム・リミテッド 有機電子素子用基板
EP2882006B1 (en) * 2012-07-31 2021-05-19 LG Chem, Ltd. Substrate for organic electronic device
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CN103928489A (zh) * 2013-08-02 2014-07-16 厦门天马微电子有限公司 有机发光二极管显示面板及其形成方法
KR101928598B1 (ko) * 2013-09-30 2018-12-12 주식회사 엘지화학 폴리이미드 필름 및 그 제조방법
CN103531720A (zh) * 2013-10-29 2014-01-22 南京第壹有机光电有限公司 一种高效发光的电致发光器件
KR101642603B1 (ko) * 2013-12-04 2016-07-25 주식회사 엘지화학 유기전자장치용 기판의 제조 방법
KR20160044538A (ko) * 2013-12-06 2016-04-25 코니카 미놀타 가부시키가이샤 유기 일렉트로루미네센스 소자
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DE102014107099B4 (de) * 2014-05-20 2019-10-31 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Lichtstreuendes Schichtsystem, Verfahren zu seiner Herstellung und Verwendung des Schichtsystems
KR101699275B1 (ko) * 2014-09-11 2017-01-25 코닝정밀소재 주식회사 유기발광소자용 광추출 기판, 그 제조방법 및 이를 포함하는 유기발광소자
KR101632614B1 (ko) * 2014-12-24 2016-06-22 코닝정밀소재 주식회사 유기발광소자용 광추출 기판 제조방법, 유기발광소자용 광추출 기판 및 이를 포함하는 유기발광소자
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DE102015102447A1 (de) * 2015-02-20 2016-08-25 Osram Oled Gmbh Organische Leuchtdiode
KR101721902B1 (ko) * 2015-06-26 2017-03-31 노바테크인더스트리 주식회사 광 추출 효율을 향상시킨 나노구조 기판의 제조방법
CN106154367B (zh) * 2016-08-23 2020-03-20 苏州大学 一种光扩散片
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KR20100047855A (ko) * 2007-07-13 2010-05-10 쓰리엠 이노베이티브 프로퍼티즈 컴파니 유기 발광 다이오드 디스플레이 장치를 위한 광 추출 필름
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Also Published As

Publication number Publication date
KR101114352B1 (ko) 2012-02-13
WO2012047054A2 (ko) 2012-04-12
JP2013539192A (ja) 2013-10-17
CN103155194B (zh) 2016-02-24
EP2613374A4 (en) 2017-10-11
JP5590754B2 (ja) 2014-09-17
US20130287936A1 (en) 2013-10-31
US20130302565A1 (en) 2013-11-14
EP2613374A2 (en) 2013-07-10
CN103155194A (zh) 2013-06-12
US9448339B2 (en) 2016-09-20
EP2613374B1 (en) 2019-05-01

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