WO2012036219A1 - Substrat d'élément électroluminescent et dispositif électroluminescent - Google Patents

Substrat d'élément électroluminescent et dispositif électroluminescent Download PDF

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Publication number
WO2012036219A1
WO2012036219A1 PCT/JP2011/071035 JP2011071035W WO2012036219A1 WO 2012036219 A1 WO2012036219 A1 WO 2012036219A1 JP 2011071035 W JP2011071035 W JP 2011071035W WO 2012036219 A1 WO2012036219 A1 WO 2012036219A1
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substrate
emitting element
light emitting
light
powder
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PCT/JP2011/071035
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English (en)
Japanese (ja)
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谷田　正道
篤人 ▲橋▼本
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旭硝子株式会社
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Priority to JP2012534043A priority Critical patent/JPWO2012036219A1/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • H05K1/0203—Cooling of mounted components
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10106—Light emitting diode [LED]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
    • H05K2201/10954—Other details of electrical connections
    • H05K2201/10969—Metallic case or integral heatsink of component electrically connected to a pad on PCB

Definitions

  • the present invention relates to a light-emitting element substrate and a light-emitting device using the same, and more particularly to a light-emitting element substrate excellent in solder adhesion to a metal core substrate having high heat dissipation and a light-emitting device using the same.
  • a wiring board for mounting a light-emitting element such as a light-emitting diode element has a structure in which a wiring conductor layer is disposed on or inside an insulating substrate.
  • a recess for accommodating a light emitting element is formed on the surface of an insulating substrate made of alumina ceramics, and a refractory metal powder such as tungsten or molybdenum is formed on the surface and inside of the insulating substrate.
  • this wiring board usually has an external connection terminal as a part of the wiring conductor layer on the lower surface or side surface of the insulating substrate, and solders the external connection terminal and the wiring conductor formed on the surface of the external electric circuit board. Then, by being electrically connected, it is mounted on an external electric circuit board and used.
  • Ceramic substrates such as alumina and mullite which are cited as insulating substrates in the above-mentioned wiring substrate for light emitting elements, have a high strength of 200 MPa or more and are frequently used because of their high reliability in multilayer technology such as wiring conductor layers. Yes.
  • an external electric circuit board with good heat dissipation such as a metal core board
  • a ceramic substrate such as alumina is not connected to the external electric circuit board.
  • thermal stress distortion occurs in the solder, the solder that joins the two peels off, and cannot be stably electrically connected for a long time.
  • a glass ceramic substrate is cited as an insulating substrate having such characteristics.
  • Patent Document 2 and Patent Document 3 similarly describe a glass ceramic substrate in which the solder adhesion between the wiring substrate and the external electric circuit substrate is improved, and the glass ceramic sintered body constituting the substrate is Young's It is manufactured to have a characteristic of a rate of 150 GPa or less.
  • an insulating substrate of a wiring substrate for light emitting devices recently, it is possible to fabricate copper and silver with low temperature firing, low dielectric constant and high electrical conductivity. It has been proposed to do.
  • an external electric circuit board having high heat dissipation such as a metal core board in order to ensure heat dissipation as in the case of the alumina substrate. Ensuring stable electrical connectivity over a long period of time with this highly heat-dissipating external electric circuit board is also an important characteristic.
  • the present invention relates to a light emitting element substrate for surface mounting by soldering on a wiring circuit of an external electric circuit board mainly composed of metal, and capable of maintaining a strong and stable connection state with the external electric circuit board over a long period of time. It is an object of the present invention to provide a light emitting device having high reliability for a circuit board and electrical connection using the same.
  • the substrate for a light emitting device of the present invention comprises a sintered body of a glass ceramic composition containing glass powder and ceramic powder, and a substrate body having a mounting surface, a part of which is a mounting portion on which the light emitting device is mounted, A wiring conductor for electrically connecting the electrode of the light emitting element and an external circuit is provided on the surface and inside of the substrate body, and a part of the wiring conductor is connected to an external connection terminal on a non-mounting surface opposite to the mounting surface.
  • a substrate for a light emitting element that is solder-fixed on a wiring circuit of an external electric circuit board mainly composed of metal through the external connection terminal, and the Young's modulus at 25 ° C.
  • the thermal expansion coefficient at 50 to 400 ° C. is 2 to 8 ppm / ° C.
  • the Young's modulus at 25 ° C. of the sintered body is preferably 50 GPa or more and 150 GPa or less.
  • the sintered body of the glass ceramic composition is preferably a sintered body of low-temperature co-fired ceramic.
  • the material constituting the metal plate is a metal core substrate composed of at least one selected from the group consisting of tungsten, molybdenum, copper, aluminum, and an alloy composed of two or more thereof. It is suitably used for mounting.
  • the reason for using such a metal core substrate is to ensure heat dissipation, and a metal base substrate in which an insulating layer is formed on a similar metal plate is also preferably used in the present invention.
  • the surface of the metal plate on which the insulating layer is formed means the entire surface of the substrate, and in the case of a metal base substrate, it means at least the surface bonded to the light emitting element substrate by soldering. To do.
  • the light-emitting device of the present invention includes a light-emitting element substrate of the present invention, a light-emitting element mounted on the light-emitting element substrate, and an external body mainly composed of a metal having a wiring circuit on which the light-emitting element substrate is mounted.
  • ADVANTAGE OF THE INVENTION in the board
  • a light-emitting element substrate and a light-emitting device having high reliability in electrical connection using the substrate can be provided.
  • (A) is a plan view of an evaluation model in which a light emitting element substrate of the present invention and an external electric circuit substrate used for evaluation in the examples are joined by a solder layer
  • (b) is a cross-sectional view taken along line XX of the plan view. It is a fragmentary sectional view.
  • the substrate for a light emitting device of the present invention is a sintered body of a glass ceramic composition containing glass powder and ceramic powder (hereinafter referred to as “LTCC” (low-temperature co-fired ceramic) or “LTCC substrate” (low-temperature co-fired ceramic substrate). And a substrate main body having a mounting surface on which a part of the light emitting element is mounted, and an electrode and an external circuit of the light emitting element are electrically connected to the surface and inside of the substrate main body.
  • LTCC glass ceramic composition containing glass powder and ceramic powder
  • LTCC substrate low-temperature co-fired ceramic substrate
  • a part of the wiring conductor is disposed as an external connection terminal on a non-mounting surface opposite to the mounting surface, and an external body mainly composed of metal via the external connection terminal.
  • a substrate for a light emitting element which is solder-fixed on a wiring circuit of an electric circuit board, wherein the sintered body has a Young's modulus at 25 ° C. of 150 GPa or less and a thermal expansion coefficient at 50 to 400 ° C. Characterized in that it is a 2 ⁇ 8ppm / °C.
  • the “wiring conductor” of the light emitting element substrate is electrically connected from the electrode of the light emitting element to be mounted to the wiring circuit of the external electric circuit board through the electrode. All conductors related to the electrical wiring provided in this way, for example, element connection terminals connected to the electrodes of the light emitting element, inner layer wiring provided in the substrate (including through conductors penetrating through the substrate), external electric circuit board This term is used as a general term for external connection terminals connected to the wiring circuit.
  • a high heat dissipation external electric circuit board mainly composed of metal is used in order to enhance the heat dissipation of the light emitting device.
  • LTCC having a Young's modulus at 25 ° C. of 150 GPa or less and a thermal expansion coefficient of 2 to 8 ppm / ° C. at 50 to 400 ° C. is used as the material constituting the insulating substrate body of the light emitting element substrate. This makes it possible to reduce thermal stress strain (hereinafter referred to as residual stress strain) remaining in the solder layer after joining the light emitting element substrate and the external electric circuit substrate, and breaking the joint wiring due to peeling or the like. Is suppressed.
  • the substrate for a light-emitting element of the present invention in which the LTCC having the above characteristics is a constituent material of an insulating substrate body is a high heat dissipation external electric circuit substrate mainly composed of a metal mounted by a solder layer.
  • the external electric circuit board mainly composed of the metal to be used is used without particular limitation.
  • the thermal expansion coefficient of the metal at 50 to 200 ° C. is about 3 to 10 ppm / ° C., which is a difference from the thermal expansion coefficient of the LTCC used in the present invention. Is about 8 ppm at the maximum.
  • the substrate for a light-emitting element of the present invention is mounted on an external electric circuit substrate mainly composed of metal via a solder layer, if the difference in thermal expansion coefficient between the LTCC and the metal is within this range, the Young's modulus of the LTCC When the pressure is set to 150 GPa or less, solder bonding with reduced residual stress strain as described above can be achieved.
  • FIG. 1 is a plan view (a) showing an example of a substrate for a light-emitting element of the present invention, and a cross-sectional view along line XX in the plan view (a).
  • the light emitting element substrate 1 has a substantially flat substrate body 2 that mainly constitutes the substrate.
  • the substrate body 2 is made of a sintered body of a glass ceramic composition containing glass powder and ceramic powder, and has a Young's modulus at 25 ° C. of 150 GPa or less and a thermal expansion coefficient of 50 to 400 ° C. ⁇ 8 ppm / ° C.
  • the substrate body 2 is used as a light emitting element substrate, the surface on which the light emitting element is mounted is used as the mounting surface 21. In this example, the opposite surface is used as the non-mounting surface 23.
  • LTCC sintered body
  • Young's modulus at 25 ° C. is 150 GPa or less and thermal expansion at 50 to 400 ° C.
  • Any LTCC having a coefficient of 2 to 8 ppm / ° C. is not particularly limited.
  • the Young's modulus of the LTCC exceeds 150 GPa, a considerable residual stress strain occurs in the solder layer when the light emitting element substrate is mounted on the external electric circuit substrate mainly composed of metal via the solder layer, and the long term Stable use becomes difficult.
  • the thermal expansion coefficient of LTCC is less than 2 ppm / ° C.
  • the difference in thermal expansion coefficient from the external electric circuit board becomes large, and as a result, the residual stress strain between the two becomes large.
  • it exceeds 8 ppm / ° C. the difference in thermal expansion coefficient between the LED element mounted on the LTCC increases and the residual stress strain between the LED element and the LTCC increases.
  • the Young's modulus of LTCC used for the light emitting element substrate of the present invention is 150 GPa or less at 25 ° C. as described above, but is preferably 130 GPa or less, more preferably 100 GPa or less at the same temperature.
  • the lower limit of the Young's modulus of LTCC is not particularly provided, it is preferably 50 GPa or more from the viewpoint of strength.
  • the thermal expansion coefficient of LTCC is 2 to 8 ppm / ° C. at 50 to 400 ° C., but preferably 3 to 8 ppm / ° C., more preferably 3 to 7 ppm / ° C. in the same temperature range.
  • Such a slurry for forming a sintered body of a glass ceramic composition containing glass powder and ceramic powder satisfying the above-mentioned Young's modulus and thermal expansion coefficient includes, for example, the following glass powder and ceramic powder.
  • the glass ceramic composition is prepared by adding a binder resin and, if necessary, a plasticizer, a dispersant, a solvent and the like. Examples include a sintered body obtained by forming the slurry into a sheet having a predetermined shape by a doctor blade method, drying, degreasing as necessary, and firing at 800 ° C. or higher and 930 ° C. or lower.
  • the glass powder used as the raw material component of the LTCC is not necessarily limited, but a glass transition point (Tg) of 550 ° C. or higher and 700 ° C. or lower is preferable.
  • Tg glass transition point
  • the glass transition point (Tg) is less than 550 ° C., degreasing after forming the green sheet using the slurry may be difficult.
  • the glass transition point (Tg) exceeds 700 ° C., the shrinkage start temperature is increased, and the dimensional accuracy is increased. May decrease.
  • crystals do not precipitate when baked at 800 ° C. or higher and 930 ° C. or lower.
  • the crystal may be strongly generated only at the interface with the wiring material formed inside and outside the LTCC such as Ag.
  • the portion where the crystal is precipitated has a smaller firing shrinkage than the portion where the crystal is not precipitated. For this reason, the shrinkage is nonuniform between the portion with wiring and the portion without wiring, and the shape after firing may be deformed by this difference in firing shrinkage.
  • the Young's modulus may increase, which is not preferable.
  • the glass powder that can be used as the raw material component of the LTCC include, based on oxides, 30 to 75 mol% of SiO 2 , 0 to 20 mol% of B 2 O 3 , 0 to 5 mol% of ZnO, Li 2 O + Na 2 O + K. Examples thereof include those containing 2 O 0 to 10 mol%, CaO 10 to 35 mol%, CaO + MgO + BaO + SrO 10 to 35 mol%, TiO 2 0 to 5 mol%, and Al 2 O 3 0 to 10 mol%.
  • This glass powder contains a large amount of SiO 2 and is preferable because it can be effectively sintered even when a large amount of ceramic powder is contained in LTCC and has excellent chemical durability. .
  • SiO 2 is a glass network former, and is a component that is essential for improving chemical durability, particularly acid resistance.
  • chemical durability may be reduced.
  • the glass melting temperature may be increased, or the glass softening point (Ts) may be excessively increased.
  • B 2 O 3 is not an essential component but is preferably a glass network former and a component that lowers the softening point. If the content of B 2 O 3 exceeds 20 mol%, it is difficult to obtain a stable glass and also the chemical durability may deteriorate.
  • ZnO is not an essential component, but is a component that lowers the softening point and is useful. If the ZnO content exceeds 5 mol%, chemical durability may be reduced. In addition, the glass tends to crystallize during firing, which may hinder sintering and may not reduce the porosity of the sintered body.
  • Li 2 O is an alkali metal oxide, Na 2 O, and K 2 O is a component to lower the softening point, it is preferable to contain. Li 2 O, Na 2 O, and K 2 O, only one or two may be contained. When none of these metal oxides is contained, the glass melting temperature and the glass transition point (Tg) may be excessively high. On the other hand, when the total content thereof exceeds 10 mol%, chemical durability, particularly acid resistance may be lowered, and electrical insulation properties may be lowered.
  • CaO is a component that enhances the stability of the glass and lowers the softening point.
  • CaO is a component that improves the wettability between the alumina powder and the glass during firing, and has the effect of reducing the porosity of the sintered body. It is a certain component and essential.
  • CaO is a component that increases the thermal expansion coefficient, and is useful when matching the thermal expansion coefficient with other substrate materials and the like. When the content of CaO is less than 10 mol%, the stability of the glass cannot be sufficiently increased, and the softening point may not be sufficiently lowered.
  • CaO it may contain at least one selected from MgO, BaO, and SrO as a component that increases the stability of the glass and lowers the softening point.
  • the content of MgO, BaO, and SrO is 35 mol% or less together with the content of CaO. If the total content of CaO, MgO, BaO, and SrO exceeds 35 mol%, the stability of the glass may be reduced.
  • the total content of MgO, BaO, and SrO excluding CaO is preferably 15 mol% or less.
  • TiO 2 is not an essential component, but is useful as a component that enhances the weather resistance of glass. When the content of TiO 2 exceeds 5 mol%, there is a possibility that the stability of the glass decreases.
  • Al 2 O 3 is not an essential component, but is useful as a component that enhances the stability and chemical durability of glass. When the content of Al 2 O 3 exceeds 10 mol%, there is a possibility that the softening point becomes excessively high.
  • the content of Al 2 O 3 is preferably at least 2 mol%, more preferably at least 3 mol%.
  • a glass material consists essentially of the said component, it can contain other components other than the said component in the limit which does not impair the objective of this invention.
  • the glass may contain a P 2 O 5 in order to lower the softening point.
  • Sb 2 O 3 may be contained in order to increase the stability of the glass.
  • the total content is 10 mol% or less, and 5 mol% or less is preferable.
  • the glass powder used as a raw material component of LTCC is composed of other required characteristics as long as the LTCC obtained by being blended and fired satisfies the conditions of the Young's modulus and thermal expansion coefficient in the present invention. Can be adjusted.
  • glass powders include glass powders such as the first glass powder, the second glass powder, and the third glass powder, as shown below, depending on the difference in combination characteristics with the ceramic powder described later. .
  • the first glass powder is a glass powder that can be effectively sintered even if it contains a large amount of ceramic powder, particularly ceramic powder having a higher refractive index than alumina.
  • the first glass powder is 30 to 55 mol% of SiO 2 , 0 to 20 mol% of B 2 O 3 , 0 to 5 mol% of ZnO, 0 to 10 mol% of Li 2 O + Na 2 O + K 2 O, and 10 to 35 mol of CaO based on oxides. %, CaO + MgO + BaO + SrO 10-35 mol%, TiO 2 0-5 mol%, Al 2 O 3 0-10 mol%.
  • the second glass powder is a glass powder that can be effectively sintered even if it contains a large amount of ceramic powder.
  • the second glass powder is 55 to 65 mol% of SiO 2 , 10 to 20 mol% of B 2 O 3 , 0 to 5 mol% of ZnO, 1 to 5 mol% of Li 2 O + Na 2 O + K 2 O, and 10 to 20 mol of CaO on the oxide basis.
  • the second glass powder is 57 to 63 mol% of SiO 2 , 12 to 18 mol% of B 2 O 3 , 0 to 3 mol% of ZnO, 1 to 5 mol% of Li 2 O + Na 2 O + K 2 O, based on oxide. It contains CaO 12-18 mol%, CaO + MgO + BaO + SrO 12-20 mol%, TiO 2 0-3 mol%, and Al 2 O 3 2-8 mol%.
  • the third glass powder contains a large amount of SiO 2 , Li 2 O + Na 2 O + K 2 O compared to the second glass powder, and has a high reflectance even if the content of the ceramic powder is relatively small. Is preferable.
  • the third glass powder is composed of 65 to 75 mol% of SiO 2 , 0 to 5 mol% of B 2 O 3, 0 to 5 mol% of ZnO, 5 to 12 mol% of Li 2 O + Na 2 O + K 2 O, and 15 to 25 mol of CaO based on oxides. %, CaO + MgO + BaO + SrO 15 to 30 mol%, TiO 2 0 to 5 mol%, Al 2 O 3 0 to 5 mol%.
  • the third glass powder is 67 to 73 mol% of SiO 2 , 0 to 3 mol% of B 2 O 3, 0 to 3 mol% of ZnO, 6 to 11 mol% of Li 2 O + Na 2 O + K 2 O, based on oxide. It contains CaO 16-22 mol%, CaO + MgO + BaO + SrO 16-25 mol%, TiO 2 0-3 mol%, and Al 2 O 3 0-3 mol%.
  • a glass powder that can be used as a raw material component of the LTCC a glass powder that can be effectively sintered at a relatively low temperature even when a ceramic powder having a higher refractive index than alumina is contained at a high content.
  • the glass powder is an oxide basis, the SiO 2 0 ⁇ 50 wt%, the B 2 O 3 15 ⁇ 50 wt%, the Al 2 O 3 0 ⁇ 10% by weight, selected ZnO, CaO, from SrO and BaO 1 to 2 or more types in total 3 to 65% by mass, 1 or 2 types selected from Li 2 O, Na 2 O and K 2 O in total 3 to 20% by mass, Bi 2 O 3 A composition containing 0 to 10% by mass is also possible.
  • the glass powder the SiO 2 0 ⁇ 50 wt% on an oxide basis, the B 2 O 3 15 ⁇ 50 wt%, the Al 2 O 3 0 ⁇ 10 wt%, ZnO, CaO, from SrO and BaO
  • the composition may contain 10 to 50% by mass.
  • the glass powder used in the present invention can be obtained by producing glass having the above glass composition by a melting method and pulverizing it by a dry pulverization method or a wet pulverization method.
  • a dry pulverization method it is preferable to use water as a solvent.
  • the pulverization can be performed using a pulverizer such as a roll mill, a ball mill, or a jet mill.
  • the glass powder used in the present invention preferably has a 50% particle size (D 50 ) of 0.5 to 5 ⁇ m. If D 50 is less than 0.5 [mu] m, it becomes industrially easily unlikely also to aggregate production, it is difficult to handle. Further, it is difficult to disperse in the glass ceramic composition. D 50 is more preferably 0.8 ⁇ m or more, and further preferably 1.5 ⁇ m or more. On the other hand, if D 50 exceeds 5 [mu] m, it becomes difficult to obtain a dense sintered body by firing. In order to obtain a dense fired body by firing, D 50 of the glass powder is more preferably 4 ⁇ m or less, and further preferably 3 ⁇ m or less. The particle size can be adjusted, for example, by classification as necessary after pulverization. In addition, the 50% particle size (D 50 ) in the present specification is a value measured by a laser diffraction scattering method.
  • the blending amount of the glass powder and the ceramic powder in the glass ceramic composition in the raw material component of the LTCC is a ratio of 25 to 60 mass% with respect to the total amount of the glass powder and the ceramic powder of the glass ceramic composition.
  • the ceramic powder is blended at a ratio of 75 to 40% by mass with respect to the total amount of the glass powder and the ceramic powder of the glass ceramic composition.
  • the glass powder content in the glass ceramic composition is less than 25% by mass, firing may be insufficient and a dense sintered body (ie, LTCC substrate) may not be obtained.
  • the blending amount of the glass powder is preferably 28% by mass or more, and more preferably 31% by mass or more based on the total amount of the glass ceramic composition.
  • the blending amount of the glass powder is preferably 55% by mass or less and more preferably 53% by mass or less with respect to the total amount of the glass ceramic composition.
  • the ceramic powder in the raw material component of the LTCC for example, alumina powder, zirconia powder, titania powder, or a mixture thereof can be suitably used. These ceramic powders are blended in LTCC for the purpose of imparting the following characteristics.
  • Alumina powder is a component added to increase the bending strength of the sintered body.
  • Zirconia powder and titania powder are ceramic powders having a higher refractive index than alumina powder, and when these are blended at a predetermined ratio, a sintered body having a high reflectance with respect to light in the visible light region can be obtained. Furthermore, since crystallization of the glass phase is suppressed, warpage is suppressed and a sintered body having good shape stability can be obtained.
  • These ceramic powders can be used by appropriately combining and adjusting the mixing ratio according to the performance required of the substrate body made of LTCC in the light emitting element substrate in consideration of the characteristics of each ceramic powder.
  • the blending ratio of the alumina powder to the total amount of the glass ceramic composition is preferably about 15 to 60% by mass. If the content of the alumina powder is less than 15% by mass, the desired bending strength may not be obtained. On the other hand, if the content of the alumina powder exceeds 60% by mass, not only firing becomes insufficient and it becomes difficult to obtain a dense sintered body, but also the smoothness of the surface of the sintered body may be impaired.
  • examples of the glass powder that is preferably combined include the second glass powder and the third glass powder.
  • D 50 which is a 50% particle diameter of the alumina powder is preferably 0.3 to 5 ⁇ m. D 50 is difficult to achieve a sufficient flexural strength is less than 0.3 [mu] m. From the viewpoint of obtaining a sintered body having higher bending strength, D 50 is preferably 0.6 ⁇ m or more, and more preferably 1.5 ⁇ m or more. On the other hand, the smoothness of the sintered body surface D 50 exceeds 5 ⁇ m is impaired, or it is difficult to obtain a dense sintered body by firing. From the viewpoint of obtaining a denser and smoother sintered body, D 50 is preferably 4 ⁇ m or less, and more preferably 3 ⁇ m or less.
  • the blending ratio of the alumina powder to the total amount of the glass ceramic composition is preferably 15 to 60% by mass.
  • the content of the alumina powder is less than 15% by mass, it is difficult to achieve a desired bending strength. From the viewpoint of obtaining a sintered body with higher bending strength, it is preferably 17% by mass or more, and more preferably 18% by mass or more.
  • the content of the alumina powder exceeds 60% by mass, not only the firing becomes insufficient and it becomes difficult to obtain a dense sintered body, but the smoothness of the surface of the sintered body may be impaired.
  • the content is preferably 50% by mass or less, and more preferably 45% by mass or less.
  • the blending ratio of the high refractive index ceramic powder used together with the alumina powder to the total amount of the glass ceramic composition is preferably 5 to 50% by mass.
  • the content of the high refractive index ceramic powder is less than 5% by mass, a sintered body having a high reflectance, specifically, a reflectance of 85% or more which is a practically sufficient reflectance (that is, a thickness of 300 ⁇ m).
  • a sintered body having a reflectance of the LTCC substrate may not be obtained.
  • the reflectance is at a wavelength of 460 nm.
  • the content of the high refractive index ceramic powder is preferably 15% by mass or more, and more preferably 20% by mass or more.
  • the content of the high refractive index ceramic powder exceeds 50% by mass, it becomes difficult to obtain a dense sintered body.
  • the content is preferably 45% by mass or less, and more preferably 40% by mass or less.
  • the glass powder that is preferably combined the glass powder exemplified below as the glass powder that can contain the first glass powder or the second glass powder, or the high refractive index ceramic powder in a high content (hereinafter, And glass powder for high refractive index ceramic powder).
  • And glass powder for high refractive index ceramic powder the glass powder exemplified below as the glass powder that can contain the first glass powder or the second glass powder, or the high refractive index ceramic powder in a high content
  • And glass powder for high refractive index ceramic powder the glass powder exemplified below as the glass powder that can contain the first glass powder or the second glass powder, or the high refractive index ceramic powder in a high content
  • the first glass powder or the glass powder for high refractive index ceramic powder it is preferable to use the first glass powder or the glass powder for high refractive index ceramic powder.
  • the high refractive index ceramic powder used together with the alumina powder is, for example, titania powder or zirconia powder.
  • the refractive index of titania powder is about 2.7
  • the refractive index of zirconia powder is about 2.2, which is higher than that of alumina powder. It has a refractive index.
  • the difference between the refractive index of the high refractive index ceramic powder and the refractive index of the glass powder is 0.4 or more.
  • the composition of the glass powder is appropriately adjusted within a range where the effects of the present invention are not impaired, and a high refractive index ceramic powder to be combined is appropriately selected.
  • the refractive index is a refractive index with respect to light having a wavelength of 460 nm.
  • the refractive index is 1.5 to 1.
  • a glass powder of about 6 is obtained.
  • ceramic powder having a refractive index of more than 1.95 for example, titanium compounds such as barium titanate, strontium titanate, potassium titanate, titanium and zirconium It is possible to use other composite materials whose main component is.
  • the high refractive index ceramic powder it is particularly preferable to use zirconia powder.
  • zirconia powder it is possible to suppress a decrease in reflectance due to absorption of light near 400 nm, for example, when titania powder is used.
  • the zirconia powder may be composed of unstabilized zirconia, but is preferably a powder composed of partially stabilized zirconia partially stabilized by the addition of Y 2 O 3 , CaO, or MgO.
  • partially stabilized zirconia for example, a phase transition under high temperature can be suppressed, and a sintered body having various characteristics can be obtained.
  • the kind of the partially stabilized zirconia is not necessarily limited, but Y 2 O 3 -added zirconia that can be easily obtained industrially at low cost is preferable.
  • the amount of Y 2 O 3 added is preferably 0.1 to 10 mol%.
  • the D 50 which is the 50% particle size of such a high refractive index ceramic powder, is preferably 0.05 to 5 ⁇ m. It is less than D 50 of 0.05 .mu.m, since the size of the powder than the wavelength of light (460 nm in the present invention) is too small, it becomes difficult to obtain a sufficient reflectance. D 50 is more preferably 0.1 ⁇ m or more, and still more preferably 0.15 ⁇ m or more. Further, when D 50 is more than 5 [mu] m, it becomes difficult to obtain a sufficient reflectance for the powder than the wavelength of light becomes too large. More preferably, it is 3 micrometers or less, More preferably, it is 1.5 micrometers or less.
  • Some industrially available high refractive index ceramic powders are relatively large (eg, D 50 is 0.05 ⁇ m to 5 ⁇ m) due to aggregation of very small primary particles (eg, D 50 of 0.05 ⁇ m or less).
  • primary particles eg, D 50 of 0.05 ⁇ m or less.
  • secondary particles are formed, but in such a case, what is important for achieving the desired reflectance is not the primary particle size but the secondary particle size. That is, when the high refractive index ceramic powder is composed of secondary particles (that is, aggregated particles), in order to achieve a desired reflectance, the D 50 of the secondary particles is 0.05 to 5 ⁇ m. preferable.
  • the D 50 of the secondary particles is more preferably 0.1 ⁇ m or more, and further preferably 0.15 ⁇ m or more. On the other hand, if the D 50 of the secondary particles exceeds 5 ⁇ m, it is difficult to obtain a sufficient reflectance. From the viewpoint of obtaining a high reflectance, the D 50 of the secondary particles is more preferably 3 ⁇ m or less, and even more preferably 1.5 ⁇ m or less.
  • the D 50 of the secondary particles is also a value measured by a laser diffraction scattering method in the same manner as the D 50 of the non-aggregated primary particles.
  • the light emitting element substrate 1 has a frame on the peripheral edge of the substrate body mounting surface 21 so as to form a cavity having a substantially circular portion at the center of the mounting surface 21 of the substrate body 2 as a bottom surface (hereinafter referred to as “cavity bottom surface”). It has a body 3. Although the material which comprises the frame 3 is not specifically limited, It is preferable to use the same material as the substrate body 2. In addition, the light emitting element mounting portion 22 is positioned substantially at the center of the cavity bottom surface.
  • element connection terminals 4 electrically connected to a pair of electrodes of the light emitting element to be mounted on the mounting surface 21 of the substrate body 2 sandwich the light emitting element mounting portion 22.
  • a pair is provided so as to face the outside.
  • the non-mounting surface 23 of the substrate body 2 is electrically connected by a solder layer to a wiring circuit included in the external electric circuit substrate on which the substrate body 2 is mounted via the non-mounting surface 23.
  • a pair of external connection terminals 5 are provided.
  • a pair of through conductors 6 for electrically connecting the element connection terminals 4 and the external connection terminals 5 are provided inside the substrate body 2.
  • the element connection terminal 4, the external connection terminal 5, and the through conductor 6 are electrically connected by a route of the light emitting element ⁇ the element connection terminal 4 ⁇ the through conductor 6 ⁇ the external connection terminal 5 ⁇ the solder layer ⁇ the wiring circuit.
  • the position and the shape are arranged are not limited to those shown in FIG. 1 and can be adjusted as appropriate.
  • These component connection terminals 4, the external connection terminals 5, and the through conductors 6, that is, the constituent materials of the wiring conductors can be used without particular limitation as long as they are the same constituent materials as the wiring conductors used for the light emitting element substrate.
  • Specific examples of the constituent material of these wiring conductors include metal materials mainly composed of copper, silver, gold and the like. Among such metal materials, a metal material composed of silver, silver and platinum, or silver and palladium is preferably used.
  • the film thickness of the element connection terminal 4 and the external connection terminal 5 is such that the size of the constituent particles of the metal paste in which metal particles usually used for forming these are dispersed is several microns, and can be sufficiently covered by sintering. From the viewpoint of achieving the above, the thickness is preferably 5 to 20 ⁇ m, more preferably 7 to 15 ⁇ m. Further, in the external connection terminal 5, on the metal conductor layer made of the above-mentioned metal material, preferably on the metal conductor layer having a thickness of 5 to 20 ⁇ m, this layer is protected from oxidation and sulfidation and has conductivity.
  • the protective layer 7a is preferably formed.
  • the conductive protective layer 7a is not particularly limited as long as it is made of a conductive material having a function of protecting the metal conductor layer, but a nickel plated layer, a chrome plated layer, or the like is preferable.
  • the thickness of the conductive protective layer 7a is preferably 2 to 20 ⁇ m, and more preferably 3 to 15 ⁇ m.
  • a gold plating layer is formed on the element connection terminal 4 from the viewpoint that a good bonding with a bonding wire used for connection with an electrode of a light emitting element to be described later can be obtained as a conductive protective layer (not shown).
  • a conductive protective layer (not shown).
  • it is formed, and it is more preferable that a nickel / gold plating layer formed by gold plating is formed on the nickel plating layer.
  • the thickness of the conductive protective layer is preferably 2 to 20 ⁇ m for the nickel plating layer and 0.1 to 1.0 ⁇ m for the gold plating layer.
  • the light emitting element substrate 1 preferably has a thermal via 8 embedded in the substrate body 2 for reducing thermal resistance.
  • the thermal via 8 has a columnar shape smaller than the light emitting element mounting portion 22, and a plurality of thermal vias 8 are provided immediately below the light emitting element mounting portion 22.
  • the thermal via 8 is provided from the non-mounting surface 23 to the vicinity of the mounting surface 21 so as not to reach the mounting surface 21.
  • the thermal via 8 may be formed so as to penetrate from the non-mounting surface 23 of the substrate body 2 to the mounting surface 21 so as to reach the mounting surface 21.
  • the thermal via 8 is not directly under the light emitting element mounting portion 22 but a part of the thermal via 8 is placed in a region having a distance of 1.0 mm or less from the end of the light emitting element 11.
  • it is 0.5 mm or less, More preferably, it is 0.2 mm or less.
  • a part of the thermal via 8 does not enter the light emitting element mounting portion 22 from the viewpoint of the flatness of the mounting portion 22 as described above.
  • the thermal via 8 that is arbitrarily provided in the light emitting element substrate 1 of the present invention is disposed as long as it is disposed so as to reduce the thermal resistance while maintaining the flatness of the light emitting element mounting portion.
  • the position, shape, size, number, and the like are not limited to those shown in FIG. 1 and can be adjusted as appropriate.
  • the substrate 1 for light-emitting element 1 is not mounted on the substrate body 2 so as to be connected to the thermal via 8 in order to conduct heat from the thermal via 8 to an external electric circuit board mainly made of metal and having high heat dissipation. 23, an external heat radiation layer 9 is provided. As shown in FIG.
  • the external heat dissipation layer 9 is joined to the wiring circuit 34 via the external connection terminal 5 via the solder layer 33a. In the same manner as described above, it is joined to the solder connection pad 36 of the external electric circuit board through the solder layer 33b, thereby securing a heat radiation path from the thermal via 8 to the metal portion (ie, heat sink) of the external electric circuit board.
  • the material constituting the thermal via 8 and the external heat dissipation layer 9 is not particularly limited as long as it is a material having heat dissipation properties, but a metal material containing silver, specifically, silver, silver and platinum, or silver and palladium.
  • the metal material consisting of is preferably used.
  • Specific examples of the metal material composed of silver and platinum or silver and palladium include a metal material in which the ratio of platinum or palladium to the total amount of the metal material is 5% by mass or less.
  • the film thickness of the external heat dissipation layer 9 can be the same as the film thickness of the external connection terminal 5. Further, it is preferable that a conductive protective layer 7b that protects this layer from oxidation and sulfurization and has thermal conductivity is formed on the external heat radiation layer 9.
  • the conductive protective layer 7 b can have the same configuration as the conductive protective layer 7 a provided on the external connection terminal 5.
  • the light emitting element mounting portion 22 is preferably provided with a glass film having a surface roughness Ra of 0.4 ⁇ m or less. Since the surface roughness Ra of a general LTCC substrate is about 1.0 ⁇ m, the flatness can be further improved by providing such a glass film on the light emitting element mounting portion 22. Since the reflectance of the glass film is generally lower than that of the substrate body 2, it is preferable to provide the glass film only on the light emitting element mounting portion 22 and not on the other portions.
  • the surface roughness Ra is an arithmetic average roughness Ra, and the value of the arithmetic average roughness Ra is represented by 3 “Definition and display of defined arithmetic average roughness” of JIS: B0601 (1994). Is.
  • FIG. 2 is a plan view (a) showing an example of the light emitting device 10 of the present invention using the light emitting element substrate 1 shown in FIG. 1, and a cross-sectional view along line XX in the plan view (a).
  • the light emitting element mounting portion 22 located on the substantially central portion of the bottom surface of the cavity formed on the mounting surface 21 of the substrate body 2 is used.
  • a light emitting element 11 such as a light emitting diode element is fixed and mounted by a die bond agent such as a silicone die bond agent or a metal bond agent.
  • a pair of electrodes (not shown) included in the light emitting element 11 are electrically connected to the element connection terminals 4 located on the outside via bonding wires 12.
  • a sealing layer 13 is provided so as to fill the cavity so as to cover the light emitting element 11 and the bonding wire 12.
  • the light emitting device 10 has a configuration in which the light emitting element substrate 1 on which the light emitting element 11 is mounted is further mounted on an external electric circuit board 31 mainly made of metal.
  • the external electric circuit board 31 has a wiring circuit 34 at least at a portion facing the pair of external connection terminals 5 provided on the non-mounting surface 23 of the substrate body 2 of the light emitting element substrate 1 to be mounted.
  • the pair of external connection terminals 5 are mounted on the conductive protective layer 7a formed on the surface thereof by being adhesively fixed via a solder layer 33a and electrically connected thereto.
  • the external electric circuit board 31 shown in FIG. 2 includes a metal plate 32 having an insulating layer 35 on the entire surface, a wiring circuit 34 for electric wiring disposed on the insulating layer 35, and the wiring circuit 34.
  • This is a metal core substrate having a solder connection pad 36 for heat dissipation formed so as to be electrically insulated.
  • the external electric circuit board 31 has an external heat radiation layer 9 connected to the thermal via 8 provided on the non-mounting surface 23 of the substrate body 2 of the light emitting element substrate 1 to be mounted on the surface having the wiring circuit 34 and the solder connection pads 36.
  • the conductive protective layer 7b formed on the surface and the solder connection pad 36 disposed on the insulating layer 35 are bonded and fixed via the solder layer 33b.
  • the light emitting element substrate 1 on which the light emitting element 11 is mounted and the external electric circuit board 31 are electrically connected to the electrode of the light emitting element 11 ⁇ the bonding wire 12 ⁇ the element connection terminal 4 ⁇ the through conductor 6 ⁇ the external connection.
  • the terminal 5 (conductive protective layer 7a), the solder layer 33a, and the wiring circuit 34 are connected to form a path.
  • the heat path is connected so as to conduct from the thermal via 8 ⁇ the external heat radiation layer 9 (conductive protection layer 7 b) ⁇ the solder layer 33 b ⁇ the solder connection pad 36 ⁇ the insulating layer 35 ⁇ the metal plate 32.
  • the external electric circuit board mainly composed of metal used in the light emitting device of the present invention specifically, a metal having an insulating layer on the surface as schematically shown in the external electric circuit board 31 of FIG. Examples thereof include a metal core substrate having a plate and a wiring circuit disposed on the insulating layer, and a metal base substrate having a structure in which a wiring circuit is disposed on an insulating layer of a metal plate having an insulating layer on the upper surface.
  • the heat generated by the light emitting element 11 is generated from the insulating layer 35 via the thermal via 8 ⁇ the external heat dissipation layer 9 (conductive protection layer 7 b) ⁇ the solder layer 33 b ⁇ the solder connection pad 36, and the metal on the metal core substrate. It is transmitted to the plate 32 and radiated. That is, the metal plate 32 acts as a heat sink.
  • a metal material with high heat dissipation which is usually used as a heat sink material, can be used without any particular limitation.
  • Specific examples include at least one metal material selected from the group consisting of tungsten, molybdenum, copper, aluminum, and an alloy made of two or more of these.
  • the coefficient of thermal expansion of such a metal material at 50 to 200 ° C. is, for example, 5.1 ppm / ° C. for molybdenum (Mo), 4.5 ppm / ° C. for tungsten (W), and the mass ratio of tungsten and copper (Cu).
  • thermal expansion coefficients with x and y indicate anisotropic thermal expansion, where x indicates the x direction and y indicates the thermal expansion coefficient in the direction. Moreover, it is 17 ppm / ° C. for copper (Cu) and 23 ppm / ° C. for aluminum (Al).
  • the metal material tends to have a larger thermal expansion coefficient than that of the LTCC used in the present invention.
  • the LTCC has a small Young's modulus, so that the residual stress distortion generated in the solder layers 33a and 33b can be reduced, resulting in problems such as peeling. Occurrence can be suppressed.
  • a smaller difference in thermal expansion coefficient is effective in reducing residual stress strain.
  • the thermal expansion coefficient of the semiconductor chip mounted on the LTCC material is 3 to 6 ppm / ° C.
  • the thermal expansion coefficient of LTCC is 2 to 8 ppm / C was selected. Considering this as a reference, it is ideal to use a heat sink material having a thermal expansion coefficient lower than 10 ppm / ° C. However, even when the thermal expansion coefficient exceeds 10 ppm / ° C., if the LTCC material has a small Young's modulus, the residual stress distortion generated in the solder layers 33a and 33b can be reduced, and there is no problem.
  • a commercially available product can be used as the high heat dissipation external electric circuit board in the light emitting device of the present invention.
  • Examples of commercially available products include, as a metal core substrate, a high thermal conductive metal-based copper laminate NRA series manufactured by Nippon Rika Kogyo.
  • solder material constituting the solder layers 33a and 33b a solder material used for fixing a substrate made of an LTCC material to an external electric circuit substrate can be used without particular limitation.
  • it is a solder material used in a reflow method.
  • Specific examples include solder materials made of tin / silver alloy, tin / copper alloy, tin / silver / copper alloy, and the like.
  • the thickness of the solder layer 33a that connects the external connection terminal 5 / conductive protection layer 7a and the wiring circuit 34 is preferably 10 to 50 ⁇ m from the viewpoint of bonding strength and ease of formation while ensuring sufficient bonding. 20-40 ⁇ m is more preferable.
  • the film thickness of the solder layer 33b that connects the external heat radiation layer 9 / conductive protection layer 7b and the solder connection pad 36 is preferably 10 to 50 ⁇ m, more preferably 20 to 40 ⁇ m, equivalent to the solder layer 33a.
  • the light emitting element substrate 1 shown in FIG. 1 and the light emitting device 10 shown in FIG. 2 described above as an example of the light emitting element substrate / light emitting device of the present invention can be manufactured by, for example, a manufacturing method described below.
  • symbol same as the member of a finished product is attached
  • the element connection terminal and the element connection terminal conductor paste layer are denoted by the same reference numeral 4, and the others are the same.
  • the substrate main body green sheet 2a has a non-mounting surface 23 and constitutes a lower portion of the substrate main body 2 where thermal vias are formed.
  • the substrate main body green sheet 2b constitutes an upper portion of the substrate main body 2 having a mounting surface 21 that becomes a light emitting element mounting portion 22 on which a light emitting element is mounted.
  • the frame green sheet 3 constituting the frame 3 is produced.
  • the frame green sheet 3 is formed by hollowing out a portion that becomes a cavity from a substantially flat green sheet of the same size as the substrate body green sheet in a column shape from the upper surface side to the back surface side by a normal method. It is made with.
  • the substrate green sheets 2a and 2b and the frame green sheet 3 are prepared by adding a binder resin and, if necessary, a plasticizer, a dispersant, a solvent, etc. to a glass ceramic composition containing glass powder and ceramic powder.
  • the produced slurry can be produced by forming into a predetermined shape sheet by the doctor blade method or the like and drying it.
  • the glass ceramic composition containing glass powder and ceramic powder is as described above.
  • the binder resin for example, polyvinyl butyral, acrylic resin, or the like can be suitably used.
  • plasticizer for example, dibutyl phthalate, dioctyl phthalate, butyl benzyl phthalate, di-2-ethylhexyl phthalate and the like can be used.
  • organic solvents such as toluene, xylene, 2-propanol, 2-butanol and the like can be preferably used.
  • a through-hole for forming a through conductor 6 formed so as to penetrate through 23 is formed into a predetermined size and shape by a normal method.
  • a plurality of columnar through holes for forming the thermal via 8 are formed in a predetermined size and shape in the normal manner in the green sheet 2a for the substrate body directly under the light emitting element mounting portion 22.
  • the through-conductor paste layer 6 is formed in the through-holes for forming the through-conductors 6 at the two locations of the substrate body green sheets 2a and 2b obtained as described above. Further, the substrate body green sheet 2b is provided with the element connection terminal paste layer 4 at two locations on the mounting surface 21 so as to be connected to the through conductor paste layer 6, and the substrate body green sheet 2a is non-coated.
  • the external connection terminal conductor paste layer 5 is formed on the mounting surface 23 in a predetermined size and shape, respectively. These are the wiring circuits that the electrode of the light-emitting element to be mounted has on the external electric circuit board through the solder layer from the element connection terminal paste layer 4, the through conductor paste layer 6 and the external connection terminal conductor paste layer 5. It is formed so as to be electrically connected to.
  • the element connection terminal paste layer 4 As a method for forming the element connection terminal paste layer 4, the external connection terminal conductor paste layer 5, and the through conductor paste layer 6, there is a method of applying and filling the conductor paste by a screen printing method.
  • the film thicknesses of the element connection terminal paste layer 4 and the external connection terminal conductor paste layer 5 to be formed are adjusted so that the finally obtained element connection terminals and external connection terminals have a predetermined film thickness.
  • the wiring conductor paste for example, a paste obtained by adding a vehicle such as ethyl cellulose to a metal powder mainly composed of copper, silver, gold or the like, and a solvent or the like as necessary can be used.
  • a metal powder composed of silver, a metal powder composed of silver and platinum, or a metal powder composed of silver and palladium is preferably used.
  • the thermal via paste layer 8 is connected to the plurality of columnar through-holes for forming the thermal via 8 of the green sheet 2a for the substrate body produced as described above, and the thermal via paste layer 8 is connected to the thermal via paste layer 8.
  • the external heat radiation layer conductive paste layer 9 is formed on the mounting surface 23 in a predetermined size and shape, respectively.
  • a method for forming the thermal via paste layer 8 and the external heat radiation layer conductor paste layer 9 a method of applying or filling the conductor paste by screen printing as described above can be used.
  • the film thickness of the formed conductive paste layer 9 for external heat radiation layer is adjusted so that the film thickness of the finally obtained element connection terminals and external connection terminals becomes a predetermined film thickness.
  • the conductor paste to be used is a paste containing a heat dissipating material constituting the thermal via 8 and the external heat dissipating layer 9, preferably a metal material containing silver.
  • a heat dissipating material constituting the thermal via 8 and the external heat dissipating layer 9, preferably a metal material containing silver.
  • silver, a silver palladium mixture, a silver platinum mixture, etc. are mentioned as above-mentioned.
  • the conductor paste for the heat dissipation layer can be produced in the same manner as the above-mentioned wiring conductor paste except that metal powder is used as a heat dissipation material.
  • metal powder is used as a heat dissipation material.
  • the element connection terminal paste layer 4 the external connection terminal conductor paste layer 5, and the like are penetrated with one kind of conductor paste. It is possible to form the conductive paste layer 6, the thermal via paste layer 8, and the external heat dissipation layer conductive paste layer 9.
  • the frame green sheet 3 obtained in the step (1) is laminated on the mounting surface 21 of the substrate main body green sheet 2b.
  • a green sheet laminate having a shape in which the substrate body 2 has a cavity on the mounting surface 21 and the bottom surface thereof has the light emitting element mounting portion 22 of the light emitting element is obtained as the unsintered light emitting element substrate 1.
  • Degreasing can be performed, for example, by holding at a temperature of 500 ° C. to 600 ° C. for 1 hour to 10 hours.
  • the degreasing temperature is less than 500 ° C. or the degreasing time is less than 1 hour, the binder resin or the like may not be sufficiently removed.
  • the degreasing temperature is about 600 ° C. and the degreasing time is about 10 hours, the binder resin or the like can be sufficiently removed, and if it exceeds this, the productivity may be lowered.
  • the firing can be performed by appropriately adjusting the time in the temperature range of 800 ° C. to 930 ° C. in consideration of the acquisition of the dense structure of the substrate body 2 and the frame body 3 and the productivity. Specifically, it is preferable to hold at a temperature of 850 ° C. or higher and 900 ° C. or lower for 20 minutes or longer and 60 minutes or shorter, particularly preferably at a temperature of 860 ° C. or higher and 880 ° C. or lower. If the firing temperature is less than 800 ° C., the substrate body may not be obtained as a dense structure. On the other hand, if the firing temperature exceeds 930 ° C., the productivity may decrease due to deformation of the substrate body.
  • the unsintered light emitting element substrate 1 is fired to obtain the light emitting element substrate 1.
  • the element connection terminals 4, the external connection terminals 5, and the external heat dissipation layer 9 are entirely covered.
  • the element connection terminal 4 is a gold plating layer (not shown), and the external connection terminal 5 and the external heat radiation layer 9 are nickel plating layers 7a and 7b.
  • a protective layer is disposed.
  • the manufacturing method of the light emitting element substrate 1 has been described above, but the main body green sheet 2 and the frame green sheet 3 do not have to be formed of a single green sheet, and a plurality of green sheets are laminated as described above. It may be what you did. Further, the order of forming each part can be changed as appropriate as long as the light emitting element substrate can be manufactured.
  • the method for producing the light-emitting device 10 shown in FIG. 2 using the light-emitting element substrate 1 is not particularly limited, and the method for mounting the light-emitting element 11 on the light-emitting element substrate 1 is not limited. , A method of electrical connection such as wire bonding, a method of forming the sealing layer 13 using a sealing agent, and a method of fixing the light emitting element substrate 1 to the external electric circuit substrate 31 with solder, etc. Is applicable.
  • the light emitting element substrate of the present invention and the light emitting device using the same has been described with reference to the example shown in FIGS. 1 and 2, the light emitting element substrate and the light emitting device of the present invention are not limited thereto. It is not limited. As long as it does not contradict the spirit of the present invention, the configuration can be changed as necessary.
  • ADVANTAGE OF THE INVENTION in the board
  • a substrate for a light emitting element can be provided.
  • a light-emitting element is mounted on such a light-emitting element substrate, and this is mounted by soldering on a wiring circuit of an external electric circuit board via an external connection terminal.
  • a light-emitting device with high reliability in electrical connection in which peeling is suppressed can be obtained.
  • Such a light-emitting device of the present invention can be suitably used as a backlight for mobile phones, large liquid crystal displays, etc., illumination for automobiles or decoration, and other light sources.
  • the glass powder obtained in Production Examples 1 to 3 is a glass powder classified as the second glass powder that can be effectively sintered even when a large amount of ceramic powder is contained. Further, the glass powder obtained in Production Example 4 can be effectively sintered even if it contains a large amount of ceramic powder, particularly ceramic powder having a higher refractive index than alumina, at a high content. Glass powder classified as glass powder.
  • Solvent toluene, xylene, 2-propanol, 2-butanol mixed at a mass ratio of 4: 2
  • zirconia powder two types of yttria partially stabilized zirconia powder were used as zirconia powder 1 and zirconia powder 2.
  • the green sheet thus obtained was fired to produce a fired substrate (sintered body). Firing was performed by holding at 550 ° C. for 1 hour and performing a degreasing step for decomposing and removing the binder resin, and then heating and holding at a temperature of 870 ° C. for 45 minutes.
  • the obtained substrate was measured for Young's modulus, coefficient of thermal expansion, reflectance, and bending strength by the following methods. The results are shown in Table 1, respectively.
  • an alumina substrate was prepared by a method of firing a green sheet, and the Young's modulus, thermal expansion coefficient, reflectance, and bending strength were measured in the same manner as described above. The results are also shown in Table 1.
  • Young's modulus was measured by the following method.
  • the sintered body was cut and polished so as to have a thickness of 2 mm, a width of 15 mm and a length of 100 mm, and used as a measurement sample.
  • the Young's modulus at a temperature of 25 ° C. was measured by a resonance vibration method.
  • the thermal expansion coefficient was measured by the following method. The sintered body was cut and polished so that the size of the fired body was 2 mm thick, 5 mm wide ⁇ 20 mm long, used as a measurement sample, and a temperature of 50 with a thermomechanical analyzer (TMA) (Thermal expansion meter TD5000SA manufactured by Bruker AXS). The coefficient of thermal expansion at ⁇ 400 ° C. was measured.
  • TMA thermomechanical analyzer
  • the reflectance was measured by the following method. That is, three types of fired bodies having a thickness of 140 ⁇ m, 280 ⁇ m, and 420 ⁇ m are obtained by firing a square green sheet having a width of about 30 mm, a laminate of two sheets, and a laminate of three sheets. Obtained. The reflectance of the three samples obtained was measured using a spectroscope USB2000 and a small integrating sphere ISP-RF of Ocean Optics, and linearly complemented with respect to the thickness, whereby the reflectance (unit: 170 ⁇ m and 300 ⁇ m in thickness) was measured. :%) Was calculated.
  • the three-point bending strength was measured using 10 sheets obtained by cutting the fired body into a strip shape having a thickness of about 0.85 mm and a width of 5 mm (measuring device: manufactured by Instron, INSTRON 8561). The span was 15 mm and the crosshead speed was 0.5 cm / min.
  • Example 1 A light emitting element substrate having a structure similar to that shown in FIG. 1 was manufactured by the method described below. In addition, the same code
  • a substrate main body green sheet 2 and a frame green sheet 3 for manufacturing the main body substrate 2 of the light emitting element mounting substrate 1 were prepared. That is, using the same glass ceramic composition as in Production Example 1, a slurry was prepared in the same manner as described above. The slurry is applied on a PET film by a doctor blade method, and the coating film is dried to form a substantially flat plate shape of 120 mm ⁇ 120 mm, and the thickness after baking is 0.5 mm. Then, two green sheets of the green sheet for substrate main body 2b having a thickness after firing of 0.1 mm were produced. Moreover, the shape outside the frame was the same as that of the green sheet 2 for substrate main body, and the frame green sheet 3 having a frame height after firing of 0.6 mm was manufactured.
  • the light-emitting element substrate 1 is manufactured as a multi-piece connecting substrate, and after being fired to be described later, it is divided one by one and the light-emitting element substrate 1 having an outer size of 5 mm ⁇ 5 mm is obtained. did.
  • the following description explains one division which becomes one light-emitting element substrate 1 after the division among the multi-piece connection substrates.
  • conductive powder (silver powder, manufactured by Daiken Chemical Industry Co., Ltd., trade name: S550) and ethyl cellulose as a vehicle are blended at a mass ratio of 85:15, and used as a solvent so that the solid content is 85% by mass.
  • kneading was conducted for 1 hour in a porcelain mortar, and further three times of dispersion with a three roll to produce a wiring conductor paste.
  • the metal paste for the heat dissipation layer is composed of silver powder (manufactured by Daiken Chemical Industry Co., Ltd., trade name: S400-2) and ethyl cellulose as a vehicle in a mass ratio of 90:10 for both the thermal via and the external heat dissipation layer. It mix
  • a through hole having a diameter of 0.3 mm was formed in a portion corresponding to the through conductor 6 of the green sheets 2a and 2b for the substrate body using a hole puncher.
  • the substrate main body green sheets 2a and 2b are laminated so that 2a is on the lower side and 2b is on the upper side.
  • 25 through-holes having a diameter of 0.3 ⁇ m were formed in the substrate main body green sheet 2a directly below the mounting portion 22 for forming the thermal vias 8 using a perforator.
  • the through-conductor paste layer 6 is formed by filling the through-holes for forming through-conductors in two places of the green sheets 2a and 2b for the substrate body obtained above by screen printing to form the through-conductor paste layer 6.
  • the element connecting terminal paste layer 4 is disposed on the mounting surface 21 so as to cover the through conductor paste layer 6 on the green sheet 2b, and the external connecting terminal conductor paste layer 5 is disposed on the non-mounting surface 23 on the substrate body green sheet 2a.
  • the thermal via paste layer 8 is formed by filling the thermal via through hole of the substrate main body green sheet 2a by a screen printing method so as to cover the thermal via paste layer 8.
  • the external heat radiation layer paste layer 9 was formed on the non-mounting surface 23 by screen printing.
  • a through hole having a diameter of 4.4 mm was formed by using a hole punching machine so that the substantially central portion extends from the upper surface side to the back surface side, thereby forming a cavity.
  • the substrate body green sheet 2b with the wiring conductor paste layer and the frame green sheet 3 are sequentially laminated on the substrate body green sheet 2a with the wiring conductor paste layer and the heat radiation layer metal paste layer obtained above.
  • substrate 1 for unsintered light emitting elements was obtained. This was aligned and laminated
  • substrate 1 for unsintered light emitting elements may become an external dimension of 5 mm x 5 mm after baking to the unbaking multi-piece connection board
  • the substrate was degreased by holding for 5 hours, and further baked by holding at 870 ° C. for 45 minutes to produce a multi-piece connection substrate having a plurality of sections of the light-emitting element substrate 1.
  • the film thicknesses of the element connection terminals 4, the external connection terminals 5, and the external heat dissipation layer 9 made of silver (Ag) in the sections of the obtained light emitting element substrates 1 were 7 ⁇ m.
  • a nickel plating layer having a thickness of 3 ⁇ m was formed on the surfaces of the external connection terminal 5 and the external heat dissipation layer 9.
  • the obtained multi-piece connecting substrate was divided along the dividing groove to produce a test light emitting element substrate 1.
  • FIG. 3 is a plan view of an evaluation model in which the light-emitting element substrate 1 and an external electric circuit substrate are joined by a solder layer, and a partial cross-sectional view of a central portion along the line XX of the plan view.
  • the same evaluation was performed using a substrate for a light-emitting element using an alumina substrate prepared by degreasing and firing a green sheet molded material using the alumina substrate material used in the comparative manufacturing example. It was.
  • a high thermal conductive metal base copper laminated board NRA series (hereinafter referred to as “NRK metal core board”) manufactured by Nippon Rika Kogyo Co., Ltd. was used.
  • the size of the external electric circuit board 31 (NRK metal core board) is 15 mm ⁇ 20 mm and the thickness is 1.115 mm.
  • the light-emitting element substrate 1 is bonded to the wiring circuit 34 for electric wiring on the upper surface of the external electric circuit board 31 by the solder layer 33a having a thickness of 30 ⁇ m through the external connection terminal 5 with the nickel plating layer 7a. Has been.
  • the light-emitting element substrate 1 has an external heat dissipation layer 9 with a nickel plating layer 7b, and the external electric circuit substrate 31 has a heat dissipation solder connection electrically insulated from the wiring circuit 34 on the upper surface.
  • the pad 36 On the pad 36, it is joined by a solder layer 33b having a thickness of 30 ⁇ m.
  • the shape of the solder surface is such that the solder layer 33a is a rectangle of 0.85 mm ⁇ 5.0 mm, the end portion has a radius of 0.5 mm, and a 1/4 circle cutout, and the solder layer 33b is 2.0 mm ⁇ 5.0 mm. It is a rectangle.
  • the mounting of the light emitting element substrate 1 to the external electric circuit substrate 31 by the solder bonding is performed by a solder reflow method.
  • the thermal strain generated in the solder in the temperature change during the solder reflow was subjected to a steady elastic analysis by the finite element method using the evaluation model 100.
  • the initial state was set as stress free at a temperature of 260 ° C. during solder reflow.
  • a general-purpose finite element method program MSC Marc (2005r3) was used as the analysis program.
  • Table 2 shows physical property values of each component of the evaluation model 100 used for the analysis.
  • the symmetry is set by geometric constraints, and a quarter portion of the evaluation model 100 is divided by a mesh of every 3 ⁇ m, and the total number of elements 235,940 is in the initial state, that is, at a temperature of 260 ° C. during solder reflow. Residual stress distortion generated when cooling from zero stress to the expected temperature of 25 ° C at the end of solder reflow, and residual generated when cooling to 120 ° C and -40 ° C set as thermal cycle temperatures, respectively. The stress strain was obtained by calculation. The evaluation value was the maximum value of the total number of elements of the residual stress strain generated in the solder. The results are shown in Table 3.
  • the light emitting device substrate of the present invention using LTCC having a Young's modulus at 25 ° C. of 150 GPa or less and a thermal expansion coefficient of 2 to 8 ppm / ° C. at 50 to 400 ° C. is soldered to an external electric circuit substrate.
  • the residual stress strain on the solder layer is small as compared with the case of using a substrate for a light emitting element having a ceramic substrate that is not within this range in both Young's modulus and thermal expansion coefficient, such as an alumina substrate. If the residual stress strain is small, the problem of insulation due to peeling of the solder layer is avoided, and stable electrical connection can be achieved over a long period of time.
  • the light emitting element substrate of the present invention in the light emitting element substrate for surface mounting by soldering to the wiring circuit of the external electric circuit board mainly composed of metal, it is strong and stable over a long period of time with the external electric circuit board. It is possible to maintain the connection state, and by mounting this on the wiring circuit of the external electric circuit board via the external connection terminal by soldering, the electrical connection in which peeling of the solder connection portion is suppressed is high. A reliable light-emitting device can be obtained.
  • Such a light-emitting device of the present invention can be suitably used as a backlight for mobile phones, large liquid crystal displays, etc., illumination for automobiles or decoration, and other light sources.
  • SYMBOLS 1 Light emitting element substrate (unsintered light emitting element substrate), 2 ... Substrate body (substrate body green sheet), 3 ... Frame body (frame body green sheet), 4 ... Element connection terminal (for element connection terminal) Paste layer), 5 ... external connection terminals (external connection terminal paste layer), 6 ... penetrating conductor (penetrating conductor paste layer), 7a, 7b ... conductive protective layer (conductive protective layer paste layer), 8 ... Thermal via (paste layer for thermal via), 9 ... external heat dissipation layer (paste layer for external discharge layer), 10 ... light emitting device, 11 ... light emitting element, 12 ... bonding wire, 13 ... sealing layer, 21 ...

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Glass Compositions (AREA)

Abstract

La présente invention concerne un substrat d'élément électroluminescent conçu pour monter sa surface sur un circuit de câblage d'une carte de circuit imprimé électrique externe composée essentiellement de métal par soudage. Le substrat d'élément électroluminescent est capable de maintenir une connexion stable à une carte de circuit imprimé électrique externe fermement et pendant une période prolongée. La présente invention concerne également un dispositif électroluminescent qui comporte des connexions électriques très fiables qui utilisent le substrat d'élément électroluminescent. Le substrat d'élément électroluminescent comporte un corps de substrat qui comprend un corps fritté d'une composition céramique vitreuse qui contient de la poudre de verre et de la poudre de céramique, et un conducteur de câblage qui connecte électriquement une électrode d'un élément électroluminescent et un circuit externe à la surface et l'intérieur du corps de substrat. Une partie du conducteur de câblage est prévue sous forme de borne de connexion externe, et le substrat d'élément électroluminescent est soudé sur le circuit de câblage de la carte de circuit imprimé électrique externe composée essentiellement de métal par l'intermédiaire de la borne de connexion externe. Le module de Young du corps fritté à 25 °C n'est pas supérieur à 150 GPa, et le coefficient de dilatation thermique à une température de 50 à 400 °C est 2 à 8 ppm/°C.
PCT/JP2011/071035 2010-09-17 2011-09-14 Substrat d'élément électroluminescent et dispositif électroluminescent WO2012036219A1 (fr)

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Cited By (5)

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JP2013199415A (ja) * 2012-03-26 2013-10-03 Kyocera Corp セラミック焼結体およびこれを用いた電子部品実装用基板ならびに電子装置
EP2843719A3 (fr) * 2013-08-30 2015-05-06 Toshiba Lighting & Technology Corporation Dispositif électroluminescent
JP2015534606A (ja) * 2012-09-21 2015-12-03 イーエヌアイ ソシエタ ペル アチオニＥｎｉ Ｓ．Ｐ．Ａ． 高温太陽光集熱器デバイス用基板の光学的選択塗膜を作製するプロセス及びこれにより得られた関連材料
JPWO2015087812A1 (ja) * 2013-12-11 2017-03-16 旭硝子株式会社 発光ダイオードパッケージ用カバーガラス、封着構造体および発光装置
JPWO2018235925A1 (ja) * 2017-06-22 2020-05-21 Ａｇｃ株式会社 窓材、光学パッケージ

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JP6598518B2 (ja) * 2015-06-04 2019-10-30 キヤノン電子管デバイス株式会社 放射線検出器
KR20180037238A (ko) * 2015-08-28 2018-04-11 히타치가세이가부시끼가이샤 반도체 장치 및 그 제조 방법
JP6701566B2 (ja) * 2016-04-05 2020-05-27 日本電気硝子株式会社 複合粉末、グリーンシート、光反射基材及びこれらを用いた発光デバイス

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JP2006232645A (ja) * 2005-02-28 2006-09-07 Kyocera Corp ガラスセラミック組成物、ガラスセラミック焼結体並びにそれを用いた配線基板とその実装構造
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JPH09321171A (ja) * 1996-05-30 1997-12-12 Kyocera Corp 配線基板の実装構造
JP2004231453A (ja) * 2003-01-29 2004-08-19 Kyocera Corp ガラスセラミック組成物、ガラスセラミック焼結体並びにそれを用いた配線基板と、その実装構造
JP2004256346A (ja) * 2003-02-25 2004-09-16 Kyocera Corp ガラスセラミック組成物、ガラスセラミック焼結体とその製造方法、並びにそれを用いた配線基板とその実装構造
JP2006232645A (ja) * 2005-02-28 2006-09-07 Kyocera Corp ガラスセラミック組成物、ガラスセラミック焼結体並びにそれを用いた配線基板とその実装構造
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013199415A (ja) * 2012-03-26 2013-10-03 Kyocera Corp セラミック焼結体およびこれを用いた電子部品実装用基板ならびに電子装置
JP2015534606A (ja) * 2012-09-21 2015-12-03 イーエヌアイ ソシエタ ペル アチオニＥｎｉ Ｓ．Ｐ．Ａ． 高温太陽光集熱器デバイス用基板の光学的選択塗膜を作製するプロセス及びこれにより得られた関連材料
EP2843719A3 (fr) * 2013-08-30 2015-05-06 Toshiba Lighting & Technology Corporation Dispositif électroluminescent
JPWO2015087812A1 (ja) * 2013-12-11 2017-03-16 旭硝子株式会社 発光ダイオードパッケージ用カバーガラス、封着構造体および発光装置
JPWO2018235925A1 (ja) * 2017-06-22 2020-05-21 Ａｇｃ株式会社 窓材、光学パッケージ
JP7205470B2 (ja) 2017-06-22 2023-01-17 Ａｇｃ株式会社 窓材、光学パッケージ

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