WO2012035842A1 - Dispositif d'alimentation en courant haute fréquence, dispositif de traitement de plasma, et procédé de production de film mince - Google Patents

Dispositif d'alimentation en courant haute fréquence, dispositif de traitement de plasma, et procédé de production de film mince Download PDF

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WO2012035842A1
WO2012035842A1 PCT/JP2011/064315 JP2011064315W WO2012035842A1 WO 2012035842 A1 WO2012035842 A1 WO 2012035842A1 JP 2011064315 W JP2011064315 W JP 2011064315W WO 2012035842 A1 WO2012035842 A1 WO 2012035842A1
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Prior art keywords
frequency power
supply
period
power supply
electrode
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PCT/JP2011/064315
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English (en)
Japanese (ja)
Inventor
知弘 池田
正和 滝
睦 津田
藤原　伸夫
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三菱電機株式会社
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Priority to CN201180044105.1A priority Critical patent/CN103098559B/zh
Priority to JP2012533895A priority patent/JP5638617B2/ja
Publication of WO2012035842A1 publication Critical patent/WO2012035842A1/fr

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2242/00—Auxiliary systems
    • H05H2242/20—Power circuits
    • H05H2242/26—Matching networks

Definitions

  • the present invention relates to a high frequency power supply apparatus, a plasma processing apparatus, and a thin film manufacturing method.
  • the plasma film forming apparatus is widely used as an apparatus for forming a thin film such as an amorphous silicon thin film or a microcrystalline silicon thin film on a substrate.
  • a plasma film forming apparatus capable of forming a thin film having a large area such as a thin film transistor used for a power generation layer of a thin film silicon solar cell or a flat display panel at a high speed at a time has been developed.
  • a parallel plate type plasma film forming apparatus In order to form a silicon thin film having a large area, it is common to use a parallel plate type plasma film forming apparatus.
  • the parallel plate type plasma film forming apparatus has a first electrode and a second electrode facing each other with a distance of several mm to several tens mm in a vacuum chamber.
  • the electrode is installed in a horizontal plane, supplies high-frequency power to the first electrode, and the second electrode is grounded.
  • a film forming gas such as silane (SiH 4 ) or hydrogen (H 2 ) is supplied to a gap between electrodes serving as a discharge space through a large number of apertures formed in the first electrode.
  • the gas supplied to the discharge space is turned into plasma by high frequency power.
  • the film-forming gas is decomposed in plasma, becomes radicals and ions, enters the film-forming substrate, and forms a silicon film on the substrate.
  • the second electrode on the grounded side is used as a stage, and a deposition target substrate is placed thereon.
  • VHF plasma generated using high frequency power in the VHF (Very High Frequency) band which has a higher frequency than 13.56 MHz, which has been common in the past, is formed in order to meet the needs for improving film formation quality and film formation speed. It has been actively studied for use. Since VHF plasma has the characteristics of high density and low electron temperature, it is expected as a solution to the needs.
  • VHF Very High Frequency
  • the electrode size is 1/10 or less of the wavelength ⁇ of the high-frequency power used. This is because, as a guide, if the electrode size is ⁇ / 10 or less, the in-plane variation of the electric field strength is generally within ⁇ 10% even when a standing wave is formed. For example, in the case of 13.56 MHz, the electrode size is limited to a little over 2 m, and in the VHF band, for example, 60 MHz, the electrode size is limited to about 50 cm.
  • Patent Document 1 For example, in Patent Document 1 below, at least four feeding points are provided on the electrode, and by simultaneously feeding from each feeding point, an antinode of a standing wave is formed at the center of the electrode, and the electric field distribution is nonuniform. Relaxed. As a result, a film thickness distribution of about ⁇ 10% is obtained with respect to a 50 cm ⁇ 40 cm substrate close to the above limit using high frequency power of 60 MHz.
  • Patent Document 2 discloses a method of making the electric field distribution uniform in terms of time average by feeding power alternately from two opposite sides of the rectangular electrode, although the frequency is lower than VHF. ing. For example, when a high frequency power of 27.12 MHz is alternately supplied at a frequency of 100 kHz and a film is formed on a 2.2 m ⁇ 2.4 m substrate (corresponding to about 1 m square at 60 MHz), a film thickness distribution of ⁇ 17% is obtained. It is supposed to be done.
  • the phase difference between the voltages of power supplied from two opposite sides of the rectangular electrode is temporally changed, and the first and second electrodes arranged at mutually opposing positions on the electrode are used.
  • the distance between the second feeding points is set to an integral multiple of one-half of the wavelength of the power used, and the temporally separated pulse power output from two high-frequency power sources with variable phase and two outputs capable of pulse modulation Supply.
  • the first standing wave whose antinode position matches the positions of the first and second feeding points
  • the second standing wave whose node position matches the positions of the first and second feeding points. Waves are generated alternately in time.
  • the power supply connected to the opposing positions on the electrode surface is alternately turned on / off so as not to interfere with each other.
  • This is effective in a region where the frequency is relatively low and the change in plasma distribution can be approximated almost linearly.
  • the frequency is further increased, the formation of standing waves becomes more prominent, and as a result, the plasma distribution has a curved shape with nodes.
  • the two standing waves can be made uniform by superimposing them, but the condition that the positions of the antinodes and the nodes just shift by ⁇ / 4 (for example, the electrode size is an odd multiple of ⁇ / 4). Etc.).
  • the plasma parameter changes depending on the process conditions, and ⁇ also changes accordingly. Therefore, from a practical viewpoint, there is a problem that a margin for a difference due to process conditions becomes very small, and there is a problem that it is difficult to apply to the frequency region of the VHF band.
  • Patent Document 3 there are restrictions on the structure as in Patent Document 2, such as the arrangement of the feeding point depends on the wavelength of the high-frequency power, and a phase shifter for applying modulation is required. There is a problem that the system becomes complicated.
  • An object of the present invention is to obtain a high-frequency power supply apparatus, a plasma processing apparatus, and a thin film manufacturing method capable of forming the film.
  • the present invention provides a first parallel plate electrode including a first electrode and a second electrode arranged to face the first electrode.
  • a high-frequency power supply device that supplies high-frequency power to one electrode, wherein the first high-frequency power source and the second high-frequency power source that respectively supply high-frequency power to positions apart from the first electrode, and the first The high-frequency power supply and the second high-frequency power supply are pulse-modulated so that the supply power of the second high-frequency power supply changes at a plurality of levels including a high level and a low level.
  • a power switching unit for instructing switching of the level of power supplied to the high-frequency power source and the second high-frequency power source.
  • the present invention at least two types of standing waves formed in the first period and the second period and at least one standing wave formed in the third period are switched in time, so that the electrode size
  • the in-plane uniform power intensity distribution can be formed without depending on the wavelength shortening effect by plasma.
  • FIG. 1 is a diagram schematically showing a configuration example of a plasma processing apparatus according to the present invention.
  • FIG. 2 is a diagram illustrating an example of a power profile pulse-modulated by a high-frequency power source.
  • FIG. 3 is a diagram showing an example of a power intensity distribution on the electrode when power is supplied according to the profile shown in FIG.
  • FIG. 4A is a diagram illustrating a configuration example of a high-frequency power feeding unit in which a phase difference between high frequencies fed from two high-frequency power supplies is ⁇ so that I 3 and I 1 + I 2 are in opposite phases.
  • FIG. 1 is a diagram schematically showing a configuration example of a plasma processing apparatus according to the present invention.
  • FIG. 2 is a diagram illustrating an example of a power profile pulse-modulated by a high-frequency power source.
  • FIG. 3 is a diagram showing an example of a power intensity distribution on the electrode when power is supplied according to the profile shown in FIG.
  • FIG. 4A is a diagram illustrating
  • FIG. 4B is a diagram illustrating a configuration example of a high-frequency power feeding unit in which a phase difference between high frequencies fed from two high-frequency power supplies is ⁇ so that I 3 and I 1 + I 2 are in opposite phases.
  • FIG. 4C is a diagram illustrating a configuration example of a high-frequency power feeding unit in which a phase difference between high frequencies fed from two high-frequency power sources is ⁇ so that I 3 and I 1 + I 2 are in opposite phases.
  • FIG. 5 is a diagram illustrating an example of a power profile when modulation is performed using high / low.
  • FIG. 6 is a diagram illustrating an example of a power profile in the case of supplying power of different magnitude depending on the period.
  • FIG. 7A is a diagram illustrating an example of the arrangement of feeding points.
  • FIG. 7B is a diagram illustrating an example of the arrangement of the feeding points.
  • FIG. 7C is a diagram illustrating an example of the arrangement of feeding points.
  • FIG. 8A is a schematic diagram of the power intensity distribution when the plane wave approximation is performed and the power intensity distribution when the wraparound occurs.
  • FIG. 8B is a schematic diagram of the power intensity distribution when the plane wave approximation is performed and the power intensity distribution when the wraparound occurs.
  • FIG. 9 is a diagram illustrating an example of a power profile when four feeding points are arranged.
  • FIG. 10A is a diagram illustrating an example of grouping of feeding points to which the same power profile is applied.
  • FIG. 10B is a diagram illustrating an example of grouping of feeding points to which the same power profile is applied.
  • FIG. 10A is a diagram illustrating an example of grouping of feeding points to which the same power profile is applied.
  • FIG. 10C is a diagram illustrating an example of grouping of feeding points to which the same power profile is applied.
  • FIG. 11A is a diagram illustrating an example of a change in distribution when the grouping of feeding points is changed.
  • FIG. 11B is a diagram illustrating an example of a change in distribution when the grouping of feeding points is changed.
  • FIG. 11C is a diagram illustrating an example of a change in distribution when the grouping of feeding points is changed.
  • FIG. 11-4 is a diagram illustrating an example of a change in distribution when the grouping of feeding points is changed.
  • FIG. 11-5 is a diagram illustrating an example of a change in distribution when the grouping of feeding points is changed.
  • FIG. 1 is a diagram schematically showing a configuration example of a first embodiment of a plasma processing apparatus according to the present invention.
  • the plasma processing apparatus of the present embodiment is a plasma processing apparatus that generates plasma and forms a thin film by a chemical vapor deposition method, and includes a vacuum chamber 100, a stage 110 having a moving mechanism, A shower plate 121 having a large number of gas supply ports, a pulse generator (power switching unit) 132, and high-frequency power sources (power sources) 133a and 133b capable of performing pulse modulation are provided.
  • the vacuum chamber 100 is connected to the flange 101 and is hermetically sealed with the insulating spacers 122a and 122b to separate the inside from the atmosphere.
  • the insulating spacers 122a and 122b fix the electrode block 120.
  • These structures constitute a decompression vessel including a stage 110 and a shower plate 121 inside, and a space between the stage 110 and the shower plate 121 is a plasma generation region 113 in which high-frequency plasma is generated. Above the electrode block 120 is an atmospheric pressure region.
  • the vacuum chamber 100 has an exhaust port 102 and a gate valve 103.
  • the inside of the decompression vessel is evacuated from an exhaust port 102 provided in the vacuum chamber 100 by a vacuum pump (not shown).
  • the vacuum chamber 100 is usually made of a metal such as an aluminum alloy and has good electrical conductivity.
  • the stage 110 is supported by a support 111, and the substrate to be processed 112 is placed on the stage 110.
  • the column 111 is connected to a drive mechanism (not shown), and the stage 110 can be moved up and down by changing the height of the column 111 using this drive mechanism.
  • a plasma generation gas introduction pipe is provided from the electrode block 120 through the shield box 124 and has a film forming gas supply port 123 connected to an external gas supply facility.
  • a film forming gas (plasma generating gas) is supplied from a gas supply facility via a film forming gas supply port 123 and supplied from the shower plate 121 to the plasma generating region 113.
  • the electrode block 120 supports the shower plate 121, is electrically connected to the shower plate 121, and is connected to the power feeding bars 135a and 135b.
  • the electrode block 120 is joined to the insulating spacer 122 and further insulated from the flange 101 via the insulating spacer 122.
  • a shield box 124 surrounding the electrode block 120 is provided above the electrode block 120, and the shield box 124 is insulated from the power feeding bars 135a and 135b by insulating spacers 136a and 136b, respectively.
  • a gate valve 103 is provided in the vacuum chamber 100, and the substrate 112 to be processed is transferred onto the stage 110 through the gate valve 103.
  • the substrate to be processed 112 With the substrate to be processed 112 mounted on the stage 110, the substrate to be processed 112 approaches the shower plate 121 by raising the support 111 and the stage 110. After the distance between the stage 110 and the shower plate 121 is set to a desired value, high frequency power is subsequently supplied to the shower plate 121 via the electrode block 120 to generate plasma.
  • the shower plate 121 serves as an electrode (first electrode) to which high-frequency power is supplied
  • the stage 110 serves as an electrode (second electrode) that is grounded.
  • the shower plate 121 and the stage 110 are parallel flat plates. Configure the electrode.
  • the support 111 and the stage 110 are lowered and moved away from the shower plate 121, and the substrate 112 passes through the gate valve 103 and is on the stage 110. From the vacuum chamber 100 to the outside.
  • a silicon thin film on the substrate 112 to be processed for example, monosilane (SiH 4 ) gas is used as a silicon source, hydrogen (H 2 ) gas is used as a carrier gas, and a mixture of these gases is used for plasma generation. Used as membrane gas.
  • the film forming gas is supplied into the electrode block 120 through the gas film forming gas supply port 123, and flows into the plasma generation region 113 on the opposing stage 110 through a large number of apertures formed in the shower plate 121.
  • high frequency power is supplied to the electrode block 120, the film forming gas in the plasma generation region 113 is decomposed by the high frequency power to generate high frequency plasma.
  • active species such as SiH 3 , SiH 2 , SiH, Si, and H are generated, and these active species enter the substrate to be processed 112, and amorphous or microcrystalline silicon is formed on the surface of the substrate to be processed 112. Form.
  • an amorphous or microcrystalline silicon thin film is formed on the substrate 112 to be processed.
  • the high-frequency power feeding unit of the present embodiment includes a high-frequency oscillator 130, a duplexer 131, a pulse generator 132, high-frequency switches 140a and 140b, high-frequency amplifiers 141a and 141b, and isolators 142a and 142b illustrated in FIG. , Matching units 134a and 134b and power supply bars 135a and 135b.
  • the high frequency switch 140a, the high frequency amplifier 141a, and the isolator 142a constitute a high frequency power source 133a
  • the high frequency switch 140b, the high frequency amplifier 141b, and the isolator 142b constitute a high frequency power source 133b.
  • the VHF band is selected as the frequency supplied by the high-frequency power supply unit of this embodiment in order to realize high-speed film formation. Note that although a case where the VHF band is used is described in this embodiment mode, the power supply frequency is not limited to the VHF band.
  • the electrodes have a symmetrical shape such as rectangle, square, circle, etc., such as point symmetry and line symmetry, and the power feeding location is near the periphery of the electrodes, and multiple power feeding locations are located symmetrically away from the center line or center point. It should be arranged.
  • the number of power feeding locations is selected depending on the size and structure of the device. In FIG. 1, two high frequency power sources (high frequency power sources 133a and 133b) are arranged facing each other on the short side in the electrode surface, and power is fed from two locations. A configuration example is shown.
  • the number of power feeding points is not limited to two, and may be any number depending on the size and structure of the device.
  • the low-power high-frequency signal generated using the high-frequency oscillator 130 is divided into two systems using the branching filter 131, and the divided high-frequency signals are respectively connected to the high-frequency switches 140a and 140a, The signal is input to the high-frequency amplifiers 141a and 141b through 140b.
  • the high frequency switches 140 a and 140 b are connected to the pulse generator 132 and can electrically switch on / off of the high frequency signal according to the output signal of the pulse generator 132. In this way, the high-frequency power sources 133a and 133b perform pulse modulation for controlling the magnitude of power supplied by the on-off ratio (duty ratio) of the high-frequency signal.
  • the high frequency amplifiers 141a and 141b amplify the input high frequency signals and output the amplified signals through the isolators 142a and 142b, respectively.
  • the configuration of the high-frequency power sources 133a and 133b is not limited to the configuration shown in FIG. 1, and any configuration may be used as long as the power source can pulse-modulate a high-frequency signal.
  • the electric power (high-frequency signal) output from the isolators 142a and 142b is transmitted via a coaxial cable feed line and supplied to the feed bars 135a and 135b through the matching units 134a and 134b, respectively.
  • the matching units 134a and 134b cannot follow the fluctuation of the load, and the reflected power is often high particularly immediately after on / off.
  • isolators 142 a and 142 b are arranged in the high-frequency power supply 133 so that the reflected power does not return to the high-frequency amplifier 141.
  • the isolators 142a and 142b are usually composed of a circulator and a dummy load in many cases, but the present invention is not limited to this, and any configuration may be used.
  • the power feeding bars 135a and 135b have a role of transmitting power (current) transmitted from the matching units 134a and 134b to the electrode block 120.
  • the power supply bars 135a and 135b are made of a material having high conductivity such as copper or aluminum, and are fixed to the electrode block 120 with screws or the like.
  • the current supplied from the power supply bars 135 a and 135 b flows in a very shallow portion near the surface of the electrode block 120 due to the skin effect, and is supplied to the surface portion of the shower plate 121.
  • the outer conductor of the coaxial cable that becomes the ground potential of the high-frequency power supplies 133a and 133b is connected to the casing of the matching unit 134 or the shield box 124 in the vicinity thereof.
  • the shield box 124, the vacuum chamber 100, and the flange 101 are all connected to the ground side of the high-frequency power sources 133a and 133b to prevent the occurrence of electric shock or radiation noise.
  • the stage 110 is connected to the vacuum chamber 100 and grounded.
  • FIG. 2 is a diagram illustrating an example of a power profile of power that is pulse-modulated by the high-frequency power sources 133a and 133b according to the present embodiment.
  • FIG. 3 is a diagram illustrating an example of a power intensity distribution on the electrode when power is supplied according to the power profile illustrated in FIG.
  • FIG. 2 and FIG. 3 the formation of a standing wave and the time evolution at the time of pulse feeding according to the present embodiment will be described. In the following, an outline will be described in one dimension for simplicity. Note that, in FIG.
  • high-frequency power having the same phase is supplied from the high-frequency power sources 133 a and 133 b with the left end of the relative position 0 and the right end of 1 as the power supply locations of the high-frequency power sources 133 a and 133 b, respectively. Is shown.
  • one period of the high-frequency signal generated by the high-frequency oscillator 130 is divided into three periods (1), (2), and (3).
  • the high-frequency power supply 133a is on and the high-frequency power supply 133b is off.
  • the high frequency power supply 133a is turned off and the high frequency power supply 133b is turned on.
  • both the high frequency power supply 133a and the high frequency power supply 133b are on.
  • the distribution W2 shows the power intensity distribution when only the high-frequency power supply 133b is turned on
  • the distribution W3 is a high-frequency power supply.
  • the power intensity distribution when both power supplies 133a and 133b are turned on is shown.
  • the distribution W4 indicates a distribution obtained by superimposing the distribution W1 and the distribution W2
  • the distribution W5 indicates a distribution obtained by superimposing the distribution W1, the distribution W2, and the distribution W3.
  • V1 (x, t) Asin (kx ⁇ t) (3) A is the amplitude, k is the wave number, and ⁇ is the angular frequency.
  • V (x, t) 2A cos ⁇ k (x ⁇ L) ⁇ sin (kL ⁇ t) (5)
  • I 1 is proportional to the square of the amplitude of V (x, t), and therefore, the following equation (6) is obtained.
  • the period (2) in FIG. 2 is a period in which only the high frequency power supply 133b is turned on.
  • V2 (x, t) can be expressed by the following equation (7). it can.
  • V2 Asin ⁇ k (Lx) ⁇ t ⁇ (7)
  • V (x, t) can be expressed by the following equation (8).
  • V (x, t) 2A cos (kx) sin (kL- ⁇ t) (8)
  • the power intensity distribution is I 2
  • the following formula (9) is established. I 2 ⁇ 2A 2 ⁇ cos (2kx) +1 ⁇ (9)
  • I 1 + I 2 is distributed in phase with I 3 (cos (kL) ⁇ 0) or reversed phase (cos (kL) ⁇ 0) depending on the value of L. . Therefore, when the period for forming each standing wave is set so that the ratio ⁇ of I 1 + I 2 and I 3 satisfies the following expression (13) under the condition of reverse phase, the sine wave component cancels out. Fit.
  • the power intensity distribution I av seen as a time average when set in this way can be expressed by the following equation (14), and a uniform power intensity distribution having no distribution on the electrode can be obtained.
  • the period for forming each standing wave is set so that the ratio ⁇ of I 1 + I 2 and I 3 satisfies the above-described equation (13) under the condition of reverse phase, and the high frequency signal is turned on / off. If the pulse generator 132 generates a signal to be output to the high frequency switches 140a and 140b based on this setting, a uniform power intensity distribution having no distribution on the electrodes can be obtained.
  • FIGS. 4-1 to 4-3 are diagrams showing a configuration example of a high-frequency power feeding unit in which a phase difference between high-frequency powers fed from two high-frequency power sources is ⁇ so that I 3 and I 1 + I 2 are in opposite phases. is there. For example, as illustrated in FIG.
  • the phase difference between the high-frequency power sources 133a and 133b may be set to ⁇ (rad) by providing a delay device 200 that functions as a phase adjustment unit. Furthermore, the phase difference between the high-frequency power sources 133a and 133b may be other than ⁇ in consideration of the case where the error is adjusted. Further, it may be configured such that whether or not to give a phase difference of ⁇ can be set in the delay device 200 so that the phase difference of 0 or ⁇ can be selected according to the size and frequency of the electrode.
  • the phase difference between the high-frequency power supplies 133a and 133b may be set to ⁇ (rad).
  • the phase difference between the high frequency power supplies 133a and 133b may be set to ⁇ (rad).
  • 5 shows the power profile of the power output from the high-frequency power supplies 133a and 133b when modulation is performed using high / low (high / low: where low is not 0) rather than on / off of the feed power. It is a figure which shows an example.
  • the pulse generator 132 outputs a high / low instruction signal instead of the on / off instruction signal, and the high frequency power supplies 133a and 133b output high or low power based on this signal. It is set as such.
  • 5 indicates a level lower than high and not 0 (off). High indicates the maximum output level output by each high-frequency power supply during the processing period, and low indicates the minimum output level.
  • power is output at a substantially constant level.
  • FIG. 6 is a diagram illustrating an example of a power profile of power output from the high-frequency power sources 133a and 133b when supplying power of different magnitude depending on the period. For example, as shown in FIG. 6, three power levels of high / middle / low are determined. Middle indicates an output level between high and low.
  • the power (high) in the period (1) and (2) in the period (3) since the number of actual feeding points is halved compared to the period (3), the power (high) in the period (1) and (2) in the period (3).
  • the power density temporal fluctuation can be suppressed by feeding power (middle level power) that is 1 ⁇ 2 times the power of the level).
  • the pulse generator 132 outputs a signal for instructing high / middle / low instead of the signal for instructing on / off, and the high-frequency power supplies 133a and 133b have a high level or a middle level based on this signal. Or it is set as the structure which outputs low level electric power.
  • ⁇ is not only determined on the time axis such as the length of the power supply period, but also can be adjusted by changing the input power as in the example of FIG. 6, which can be selected according to the obtained film quality. .
  • the length of the power feeding period, the magnitude of the power feeding power, and the like can be changed as appropriate. It is possible to bias the plasma distribution by using an asymmetric power supply. For example, in the manufacture of a plasma processing apparatus, asymmetry is unavoidable due to various factors such as mechanical tolerances and electrode surface conditions. Adjustments can be made to compensate for asymmetry. In particular, when manufacturing a large-sized film forming apparatus, an allowable dimensional tolerance is increased, so that the apparatus manufacturing cost can be suppressed to a low merit.
  • the combinations of the length and order of the periods (1), (2), and (3) and the magnitude of the power supplied during each period can be set independently and arbitrarily.
  • the modulation waveform is set as (1) ⁇ (2) ⁇ (3) ⁇ (1)... (1) ⁇ (3) ⁇ (2) ⁇ ( It is also possible to set as 3) ⁇ (1).
  • the combination of the length of the feeding period and the strength of the feeding power can be freely selected, and can be combined so as to be repeated at a certain period.
  • the pulse modulation cycle may be the same for the two high-frequency power supplies, but may be different.
  • the time average becomes a predetermined value, but it is possible to set a combination of conditions in which each period is short and their order appears at random, and the rocking is instantaneously oscillating at random. It is.
  • Each of the period (1), the period (2), and the period (3) in the entire supply period from the start of supply of high-frequency power to the first electrode in one continuous process of plasma treatment until the supply is stopped The time average value of the power supplied from the high frequency power supply 133a and the time average value of the power supplied from the high frequency power supply of the high frequency power supply 133b may be set to the same time average value in a plurality of periods within the entire supply period. For example, even if the pulse modulation is random, if the time average value is approximately the same for every one-fifth of the entire supply period, a stable film formation can be realized with a temporally uniform process.
  • a period in which both the high-frequency power sources 133a and 133b are turned off within one cycle may be further provided. Thereby, for example, the total supply power can be adjusted. Moreover, you may provide in any time within the whole supply period of high frequency electric power not only in 1 period.
  • the case where there are two high-frequency power sources has been described.
  • two sets of high-frequency power sources arranged so as to face each other in the electrode plane are respectively as described above.
  • the pulse modulation may be performed so that the sine wave components cancel each other out, and the pulse feeding method of the present embodiment can be applied even when two or more high-frequency power sources are used.
  • a 1400 mm ⁇ 1100 mm glass substrate (thickness: 4 mm) was placed on the stage 110 in the vacuum chamber 100 that was evacuated, and heated to 200 ° C. using a sheath heater (not shown) built in the stage 110.
  • the height position of the stage 110 was set so that the distance between the electrode block 120 and the substrate to be processed 112 was 5 mm.
  • silane gas and hydrogen gas were supplied to the film forming gas supply port 123 at flow rates of 1 slm and 50 slm, respectively, and the exhaust speed was adjusted so that the gas pressure in the plasma generation region 113 was 1000 Pa.
  • the above-described high-frequency supply unit was connected to the shower plate 121 side to generate a SiH 4 / H 2 mixed plasma, and film formation was performed for 20 minutes in a state where high-frequency power was fed at an average of 20 kW.
  • the plasma processing apparatus of this embodiment can also be applied to a plasma etching apparatus, an ashing apparatus, a sputtering apparatus, an ion implantation apparatus, and the like.
  • a horizontal apparatus holding the substrate 112 to be processed in the horizontal direction
  • the present invention can also be applied to a vertical apparatus (holding the substrate 112 to be processed in the vertical direction). is there. Which type is selected can be appropriately selected according to the use of the plasma processing apparatus.
  • the present invention can be variously modified, modified, combined, etc. other than those described above.
  • Embodiment 2 FIG. In the first embodiment, the description has been given assuming that the number of feeding points is two. However, in the method presented in the present invention, the number of feeding points may be two or more. Hereinafter, as another embodiment, a case where the number of feeding points is four or more will be described as an example of feeding two or more points.
  • the configuration of the plasma processing apparatus of the present embodiment is different in the number of feeding points (that is, four sets of high-frequency power supply, matching unit and feeding bar, and the pulse generator (power switching unit) 132 switches to four high-frequency power supplies.
  • the configuration is the same as that of the first embodiment except that an output signal is supplied for the first embodiment.
  • FIGS. 7-1 and 7-2 show an example of the arrangement of the feeding points of the present embodiment.
  • the feeding points 301a to 301d indicate four feeding points (positions of the feeding bar on the electrode 300) in the electrode 300 plane.
  • the feeding points 301 a to 301 d are required to be disposed at positions facing each other on the electrode 300.
  • the center of the electrode 300 does not have to be a target arrangement having a symmetry axis and a symmetry point, but such a highly symmetrical arrangement is better.
  • a feeding point is provided in each of the two regions so as to perform the same operation as the control of the two high-frequency powers in the first embodiment. It may be.
  • feeding points 301a to 301d are arranged at the center end of each side of the electrode 300, arranged at the four corners of the electrode 300 as shown in FIG. As shown, it is better to arrange a plurality of pairs facing each other on the long side or the short side of the electrode 300.
  • FIG. 7A feeding points 301a to 301d are arranged at the center end of each side of the electrode 300, arranged at the four corners of the electrode 300 as shown in FIG. As shown, it is better to arrange a plurality of pairs facing each other on the long side or the short side of the electrode 300.
  • plasma is generated using the feeding points 301a and 301c arranged at the center of the short side of the electrode 300 and the feeding points 301b and 301d arranged at the center of the long side of the electrode 300.
  • high-frequency power wraps around the electrode end, so that the power distribution in the electrode surface may be distorted compared to when approximated by a plane wave.
  • FIG. 8-1 and 8-2 show schematic diagrams of the power intensity distribution when plane wave approximation is performed and the power intensity distribution when wraparound occurs.
  • in-phase simultaneous power feeding is performed using only the feeding points 301a and 301c on the short side of the electrode 300
  • it is considered as a plane wave that propagates high-frequency power in the X-axis direction (parallel to the long side) of the electrode 300.
  • a kamaboko-shaped distribution as shown in -1 is obtained.
  • FIG. 8-2 shows a plane wave propagating in the Y-axis direction (parallel to the short side) as a wraparound.
  • FIG. 9 is a diagram illustrating an example of a power profile when the number of feeding points is four.
  • FIG. 9 shows an example of a power profile of power supplied from the power supply points 301a, 301b, 301c, and 301d.
  • the power profile is mainly divided into a period 320 in which the electrode 300 is made uniform in the X-axis direction and a period 321 in which the electrode 300 is made uniform in the Y-axis direction.
  • a power profile can be designed using the feeding points 301a and 301c based on the method described in the first embodiment.
  • the power profile is similarly calculated based on the method described in the first embodiment using the feeding points 301b and 301d according to the distribution in which the uniformization is performed in the period 320. Can be designed. Conversely, the power profile may be designed such that the uniformity in the Y-axis direction is performed and the uniformity in the X-axis direction is adjusted accordingly. Which to perform is suitably determined according to the size of the electrode, the discharge conditions, the obtained film quality, and the like.
  • FIGS. 10-1 to 10-3 show an example of grouping of feeding points when the same power profile is applied to a plurality of feeding points in the arrangement of feeding points shown in FIG. 7-3.
  • FIGS. 10-1 to 10-3 there are eight feeding points (301a to 301h). For example, as shown in FIG.
  • the feeding points 301a, 301b, 301g, and 301h are grouped so that the feeding points 301c, 301d, 301e, and 301f are another group, and the feedings that belong to the same group
  • the same power profile is used, and the power profile is designed as shown in the first embodiment, whereby the electrode 300 can be made uniform in the X-axis direction.
  • FIG. 10B when the feeding points 301a, 301b, 301c, and 301d and the feeding points 301e, 301f, 301g, and 301h are grouped, the electrode 300 can be made uniform in the Y-axis direction. it can.
  • the feeding points 301a, 301b, 301e, and 301f and the feeding points 301c, 301d, 301g, and 301h can be grouped, and uniformization can be performed on the electrode diagonal axes. .
  • FIGS. 11-1 to 11-5 are diagrams showing changes in distribution when the grouping of the feeding points is changed in the arrangement of the feeding points shown in FIG. 7-3. Similar to FIGS. 8A and 8B, the calculation results are based on the assumption that there is a sneak current of 16%.
  • the feeding points 301a and 301h and the feeding points 301d and 301e are fed as a group
  • the distribution is as shown in FIG. 11A
  • only the feeding points 301d and 301e When is turned on, the distribution is as shown in FIG.
  • switching of the power distribution may be performed so as to change as smoothly as possible in the plane of the electrode 300. If the power distribution changes sharply, the change in plasma distribution may not be able to respond. In particular, when the plasma remains on, the ease of generating plasma in the electrode surface (discharge start threshold electric field strength) differs depending on the immediately preceding plasma distribution. Sexual deterioration may occur. In order to avoid this, for example, a pattern in which all feeding points are turned on when the distribution is switched can be inserted. Thereby, it is possible to create a state in which plasma is always generated in the center of the electrode 300 before the distribution change, and it is possible to suppress deterioration in controllability of the plasma distribution depending on the power profile.
  • the present invention includes two or more high-frequency powers that supply power to at least two or more different locations on the electrode. At least two of the high-frequency powers are pulse-modulated so that the supplied power changes at a plurality of levels including a high level and a low level (including power off). Then, within the pulse modulation period, the supply power of one high-frequency power supply is at a high level and the supply power of the other high-frequency power supply is at a low level, and the supply power of the other high-frequency power supply is high. The second period in which the supply power of one high-frequency power supply is low and the supply power of one high-frequency power supply and the supply power of the other high-frequency power supply are both higher than the low level.
  • the ratio of the power supplied from the high-frequency power source is made closer to 1: 1 than in the first period or the second period.
  • the two high-frequency power supplies of the high-frequency power, the low-level power supplies, and the power supplies in the third period do not necessarily have to be the same. Also good. If periodical pulse modulation is performed so that the first to third periods of the power supplied from the two high-frequency power sources appear in the same periodic pattern, it is very easy to make the time ratio of the first to third periods constant. .
  • the in-plane distribution of the process can be controlled by adjusting the time ratio of the first to third periods with respect to the power supply time that is the entire process period.
  • the in-plane distribution is made as uniform as possible based on the in-plane distribution result obtained by experimenting in advance under pulse modulation conditions in which the time ratios of the first period, the second period, and the third period are changed.
  • the time ratios of the first period, the second period, and the third period, and the output level of each high-frequency power source may be adjusted. According to the present invention, even when the frequency region of the VHF band is used, a uniform in-plane electric field distribution can be formed in a large area region without complicating the device configuration.
  • the high-frequency power supply device, the plasma processing apparatus, and the thin film manufacturing method according to the present invention are useful for a plasma processing apparatus for forming a thin film on a substrate, and in particular, have a large area using a VHF band. This is suitable for a plasma processing apparatus for forming a thin film on a substrate.

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Abstract

La présente invention concerne un dispositif d'alimentation en courant haute fréquence, destiné à alimenter en courant haute fréquence des électrodes planes parallèles. Le dispositif d'alimentation en courant haute fréquence comprend : des sources de courant haute fréquence (133a, 133b), destinées à alimenter en courant haute fréquence des positions espacées les unes des autres dans l'électrode ; et un générateur d'impulsions, destiné à moduler en impulsion le courant provenant des sources de courant haute fréquence (133a, 133b) de façon à ce que le courant change entre une pluralité de niveaux incluant un niveau haut et un niveau bas. Le générateur d'impulsions commande la commutation des niveaux afin d'inclure : une période (1), durant laquelle le courant provenant de la source de courant haute fréquence (133a) se trouve au niveau haut et le courant provenant de la source de courant haute fréquence (133b) se trouve au niveau bas ; une période (2), durant laquelle le courant provenant de la source de courant haute fréquence (133b) se trouve au niveau haut et le courant provenant de la source de courant haute fréquence (133a) se trouve au niveau bas ; et une période (3), durant laquelle le courant provenant de chacune des sources de courant haute fréquence (133a, 133b) se trouve à un niveau supérieur au niveau bas.
PCT/JP2011/064315 2010-09-15 2011-06-22 Dispositif d'alimentation en courant haute fréquence, dispositif de traitement de plasma, et procédé de production de film mince WO2012035842A1 (fr)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103327724A (zh) * 2012-03-23 2013-09-25 Mks仪器有限公司 Rf发生器的双峰自动功率和频率调谐的系统及方法
JP2016157735A (ja) * 2015-02-23 2016-09-01 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
KR20170128116A (ko) * 2016-05-13 2017-11-22 램 리써치 코포레이션 반도체 제조에서 플라즈마 프로세스 공간을 제어하도록 전기적 비대칭 효과를 사용하기 위한 시스템들 및 방법들
JP2017212447A (ja) * 2016-05-26 2017-11-30 東京エレクトロン株式会社 高アスペクト比フィーチャをエッチングするための多周波電力変調
JP2018535504A (ja) * 2015-10-03 2018-11-29 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 近似鋸歯状波パルス生成によるｒｆ電力供給
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0422670B2 (fr) * 1983-09-20 1992-04-20 Hitachi Seiko Kk
JP2002313744A (ja) * 2001-04-19 2002-10-25 Sharp Corp プラズマ処理装置およびプラズマ処理方法、それらを用いて作製した薄膜、基板および半導体装置
JP2006216679A (ja) * 2005-02-02 2006-08-17 Ulvac Japan Ltd パルス分割供給によるプラズマ処理方法及び装置並びにプラズマｃｖｄ方法
JP2008117777A (ja) * 2006-11-04 2008-05-22 Huettinger Elektronik Gmbh & Co Kg 少なくとも２つの高周波電力発生器のドライブ制御方法、高周波電力発生器ドライブ制御装置および高周波プラズマ励起装置
JP2009110809A (ja) * 2007-10-30 2009-05-21 Ebatekku:Kk プラズマ処理装置及びプラズマ処理方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3590955B2 (ja) * 2004-05-26 2004-11-17 村田 正義 平衡伝送回路と、該平衡伝送回路により構成されたプラズマ表面処理装置およびプラズマ表面処理方法
JP4022670B2 (ja) * 2004-11-15 2007-12-19 村田 正義 超高周波プラズマ発生用電極と、該電極により構成されたプラズマ表面処理装置及びプラズマ表面処理方法
JP2006332704A (ja) * 2006-08-21 2006-12-07 Masayoshi Murata プラズマ表面処理方法及びプラズマ表面処理装置
JP2008047938A (ja) * 2007-10-17 2008-02-28 Masayoshi Murata 高周波プラズマｃｖｄ装置と高周波プラズマｃｖｄ法及び半導体薄膜製造法。

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0422670B2 (fr) * 1983-09-20 1992-04-20 Hitachi Seiko Kk
JP2002313744A (ja) * 2001-04-19 2002-10-25 Sharp Corp プラズマ処理装置およびプラズマ処理方法、それらを用いて作製した薄膜、基板および半導体装置
JP2006216679A (ja) * 2005-02-02 2006-08-17 Ulvac Japan Ltd パルス分割供給によるプラズマ処理方法及び装置並びにプラズマｃｖｄ方法
JP2008117777A (ja) * 2006-11-04 2008-05-22 Huettinger Elektronik Gmbh & Co Kg 少なくとも２つの高周波電力発生器のドライブ制御方法、高周波電力発生器ドライブ制御装置および高周波プラズマ励起装置
JP2009110809A (ja) * 2007-10-30 2009-05-21 Ebatekku:Kk プラズマ処理装置及びプラズマ処理方法

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* Cited by examiner, † Cited by third party
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JP2016157735A (ja) * 2015-02-23 2016-09-01 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US10707053B2 (en) 2015-02-23 2020-07-07 Tokyo Electron Limited Plasma processing method and plasma processing apparatus
JP2018535504A (ja) * 2015-10-03 2018-11-29 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 近似鋸歯状波パルス生成によるｒｆ電力供給
KR102388467B1 (ko) 2016-05-13 2022-04-19 램 리써치 코포레이션 반도체 제조에서 플라즈마 프로세스 공간을 제어하도록 전기적 비대칭 효과를 사용하기 위한 시스템들 및 방법들
KR20170128116A (ko) * 2016-05-13 2017-11-22 램 리써치 코포레이션 반도체 제조에서 플라즈마 프로세스 공간을 제어하도록 전기적 비대칭 효과를 사용하기 위한 시스템들 및 방법들
KR102535094B1 (ko) 2016-05-13 2023-05-26 램 리써치 코포레이션 반도체 제조에서 플라즈마 프로세스 공간을 제어하도록 전기적 비대칭 효과를 사용하기 위한 시스템들 및 방법들
KR20220054557A (ko) * 2016-05-13 2022-05-03 램 리써치 코포레이션 반도체 제조에서 플라즈마 프로세스 공간을 제어하도록 전기적 비대칭 효과를 사용하기 위한 시스템들 및 방법들
KR102652644B1 (ko) 2016-05-13 2024-03-29 램 리써치 코포레이션 반도체 제조에서 플라즈마 프로세스 공간을 제어하도록 전기적 비대칭 효과를 사용하기 위한 시스템들 및 방법들
KR20230076807A (ko) * 2016-05-13 2023-05-31 램 리써치 코포레이션 반도체 제조에서 플라즈마 프로세스 공간을 제어하도록 전기적 비대칭 효과를 사용하기 위한 시스템들 및 방법들
JP2017212447A (ja) * 2016-05-26 2017-11-30 東京エレクトロン株式会社 高アスペクト比フィーチャをエッチングするための多周波電力変調
US10340123B2 (en) 2016-05-26 2019-07-02 Tokyo Electron Limited Multi-frequency power modulation for etching high aspect ratio features
JPWO2018029862A1 (ja) * 2016-08-12 2019-06-06 株式会社Ｆｕｊｉ 抗腫瘍水溶液製造装置
TWI801424B (zh) * 2017-11-16 2023-05-11 日商東京威力科創股份有限公司 具有同步的信號調變之電漿處理系統及電漿處理方法
WO2020230782A1 (fr) * 2019-05-15 2020-11-19 東京計器株式会社 Dispositif d'adaptation d'impédance
JP7499656B2 (ja) 2020-09-09 2024-06-14 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理装置の高周波電力印加方法
US12027347B2 (en) 2020-09-09 2024-07-02 Tokyo Electron Limited Plasma processing apparatus and high-frequency power application method of plasma processing apparatus
WO2022059537A1 (fr) * 2020-09-15 2022-03-24 東京エレクトロン株式会社 Dispositif de traitement au plasma et procédé de fabrication de dispositif à semi-conducteurs

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