WO2012022312A2 - Solarzellenmodul und herstellungsverfahren hierfür - Google Patents
Solarzellenmodul und herstellungsverfahren hierfür Download PDFInfo
- Publication number
- WO2012022312A2 WO2012022312A2 PCT/DE2011/075121 DE2011075121W WO2012022312A2 WO 2012022312 A2 WO2012022312 A2 WO 2012022312A2 DE 2011075121 W DE2011075121 W DE 2011075121W WO 2012022312 A2 WO2012022312 A2 WO 2012022312A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- solar cell
- protective layer
- cell module
- module according
- glass carrier
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 239000011521 glass Substances 0.000 claims abstract description 62
- 239000011241 protective layer Substances 0.000 claims abstract description 56
- 239000010410 layer Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 5
- 230000002209 hydrophobic effect Effects 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 239000012811 non-conductive material Substances 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 230000004888 barrier function Effects 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- 239000004922 lacquer Substances 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 description 5
- 238000006731 degradation reaction Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 239000006059 cover glass Substances 0.000 description 4
- 239000003973 paint Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- QNWMNMIVDYETIG-UHFFFAOYSA-N gallium(ii) selenide Chemical compound [Se]=[Ga] QNWMNMIVDYETIG-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003319 supportive effect Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
- B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
- B32B17/10005—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
- B32B17/10009—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the number, the constitution or treatment of glass sheets
- B32B17/10036—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the number, the constitution or treatment of glass sheets comprising two outer glass sheets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
- B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
- B32B17/10005—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
- B32B17/10165—Functional features of the laminated safety glass or glazing
- B32B17/10174—Coatings of a metallic or dielectric material on a constituent layer of glass or polymer
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3649—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer made of metals other than silver
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3668—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having electrical properties
- C03C17/3678—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having electrical properties specially adapted for use in solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/049—Protective back sheets
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S20/00—Supporting structures for PV modules
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/40—Coatings comprising at least one inhomogeneous layer
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
- C03C2218/365—Coating different sides of a glass substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Definitions
- the invention relates to a solar cell module with a glass carrier and arranged on a device side surface of the glass carrier
- Such SolarzeUenmodule find more and more popularity due to their lower material costs compared to solar cells from semiconductor wafers.
- the device side surface of the glass carrier is covered by solar cell structures, which are then connected by means of a
- the solar cell structures generally comprise a metal layer, often formed of molybdenum, which is deposited directly on the glass substrate as a back electrode, followed by a semiconductor stack acting as a photovoltaic active structure, and finally by another conductive layer as a front electrode.
- the front electrode is usually formed of a transparent conductive material to allow incident light to pass through. Glass usually acts as a good protective and sealing material for the solar cell structure.
- the object is achieved according to the invention by a solar cell module having the features of claim 1 and by a manufacturing method for a solar cell having the features of claim 17.
- Embodiments are subject of the dependent claims.
- the invention is based on the discovery that the loss of efficiency of known solar cell modules is due to a degradation of the glass carrier.
- a back side surface of the glass carrier opposite the device side surface becomes laterally conductive. A potential difference between this back surface and the
- the return electrode of the solar cell on the device side surface causes an electric field to form across the glass carrier.
- the electric field drives ions, especially sodium ions, to move through the glass carrier to the back electrode of the solar cell.
- the ions react with the material of the back electrode, which leads to a degradation of its function.
- the protective layer can help reduce ion flux by reducing or even preventing the build-up of the electric field across the glass substrate. This can be achieved either by the surface potential on the
- the protective layer may be formed of a conductive material, such as metal, to act as an equipotential surface to which any voltage can be applied to counteract the electric field.
- the protective layer may be formed so as to prevent lateral conductivity of the back surface even in humid and hot environments. This can be achieved by means of
- the protective layer may be applied to the back surface of the glass substrate at any time during the manufacturing process, for example, before or after the deposition of the solar cell structure, or even between the process steps for the deposition of the solar cell structure.
- the glass carrier with a pre-deposited protective layer on its backside surface can be delivered to the solar module manufacturing site.
- the solar cell structure is monolithic on the device side surface of the glass carrier
- the monolithic production of the solar cell structure on the glass carrier has the advantage that an intimate
- the glass carrier There is a connection between the glass carrier and the solar cell structure.
- the solar cell structure is deposited in layers on the glass substrate.
- the opposite of monolithic deposition would be to make the solar cell structures separate from the glass slide and then place them on the glass slide.
- the cover glass which is arranged on the monolithic structure of the solar cell on glass substrate for sealing the solar cells, not monolithic with the
- the thin-film solar cells can be on amorphous silicon or other
- CdTe cadmium telluride
- CIS copper indium gallium selenium
- DSC dye-sensitized
- the glass carrier is a substrate of the solar cell structure. This means that the glass carrier is arranged on the rear side of the solar cell structure opposite to the right side of the fall.
- the glass substrate may be a superstrate of the solar cell structure. In which case, the incident light must penetrate through the glass substrate in order to penetrate the glass substrate To achieve solar cell structure. In the latter case, the protective layer must be formed on a transparent material.
- the solar cell structure of the solar cell module for protection against degradation comprises a metal layer in direct contact with the device side surface of the glass carrier.
- the metal layer may in particular be formed from molybdenum.
- a surface area on the back surface corresponding to an area covered by the solar cell structure is
- Device side surface corresponds, substantially completely covered by the protective layer.
- the expression “corresponds” means that the area of the device side surface covered by the photosensitive cell structure is projected on the back side to obtain the surface area covered by the protective layer.
- at least the area on the back surface is directly adjacent to the solar cell structure of FIG the protective layer covered to prevent the build-up of an electric field immediately below the solar cell structure.
- the protective layer substantially cover the entire back surface of the solar cell module
- This embodiment has the additional advantage that the protective layer on the back surface does not need to be patterned and that the solar cell structure and the protective layer need not be aligned with each other.
- the protective layer is made of a conductive material for
- the protective layer can be formed, for example, from a metal or from a conductive oxide. Such a conductive
- the protective layer makes it possible to have a predetermined or regulated potential
- the protective layer is formed of a non-conductive material, as shown in the foregoing, to apply the back surface of the glass carrier to counteract the potential difference between the device side surface and the back surface.
- the protective layer preferably has a sheet resistance of at least 10 12 ohms per square, more preferably at least 2 ⁇ 10 12 , 5 ⁇ 10 12 , or 10 13 ohms per square.
- the protective layer comprises a layer of lacquer which is applied to the rear side surface of the glass carrier.
- the protective layer may include one
- Polyvinylbutylaldehyde based primer with an epoxy resin Such a material may be used alone or as a primer for paint.
- the paint itself can be based on polyurethane, if necessary, with an addition of pigments.
- the protective layer is amorphous, nanocrystalline, polycrystalline or monocrystalline.
- nanocrystalline may also be termed monocrystalline, while the term monocrystalline may also be termed monocrystalline.
- the protective layer comprises an oxide, a nitride and / or an oxynitride.
- the protective layer may be a
- the protective layer may either be deposited on the back surface or applied to it by suitable means, for example by a printing process.
- the protective layer is of aluminum oxide, silicon oxide, silicon nitride, silicon oxine tride, aluminum oxynitride,
- the protective layer is a moisture barrier.
- a surface of the protective layer facing away from the glass carrier is hydrophobic.
- the entire protective layer may be formed of a hydrophobic material, or the surface of the protective layer may be rendered hydrophobic by surface treatment. This embodiment is particularly useful for nonconductive protective layers because of
- the protective layer may preferably have a layer thickness of more than 25 nm, preferably between 25 and 500 nm, although thicker layers may also be suitable.
- the protective layer according to any of the embodiments described herein may be deposited by physical or chemical vapor deposition (PVD or CVD), which is plasma can be supportive (PECVD).
- PVD or CVD physical or chemical vapor deposition
- PECVD plasma can be supportive
- Other deposition methods may also be useful, such as sputtering or epitaxy deposition methods,
- Fig. 1 a glass carrier
- FIG. 2 shows the glass carrier from FIG. 1, covered by a protective layer
- FIG. 3 shows solar cell structures formed on the glass carrier
- FIG. 4 shows a solar cell module with the solar cell structures which are arranged between the glass carrier and a cover glass.
- FIGS. 1 to 4 illustrate different stages in the manufacture of a solar cell module according to a preferred embodiment.
- a glass substrate 1 of a suitable size and thickness is first provided, comprising a device side surface 11 and a back surface 12.
- the back surface 12 of the glass carrier 1 is substantially completely covered by a protective layer 3, which
- the glass carrier 1 may already be provided with a protective layer 3 when it is supplied to the solar cell manufacturing site.
- solar cell structures 2 are formed on the device side surface 3 of the glass substrate 1 comprising a number of layers deposited on the glass substrate 1.
- Solar cell structure 2 made of thin film solar cells is suitable for this purpose. Finally, as shown in Fig. 4, a coverslip 4 is placed on the solar cell structures 2 to protect them while it is
- the protective layer 3 is deposited on the back surface 12 of the glass substrate 1 before the solar cell structures 2 are fabricated, the process may be reversed instead, or the protective layer 3 may alternatively be deposited between the deposition steps of the solar cell structures 2.
- the solar cell module can be sealed along the edges and arranged for support in a frame.
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2011291158A AU2011291158B2 (en) | 2010-06-04 | 2011-05-27 | Solar cell module and production method therefor |
US13/701,757 US20130104965A1 (en) | 2010-06-04 | 2011-05-27 | Solar cell module and manufacturing method therefor |
JP2013512759A JP2013527622A (ja) | 2010-06-04 | 2011-05-27 | 太陽電池モジュールおよびそのための製造方法 |
CN2011800274148A CN102959733A (zh) | 2010-06-04 | 2011-05-27 | 太阳能电池模块以及其制造方法 |
EP11782375.7A EP2577739A2 (de) | 2010-06-04 | 2011-05-27 | Solarzellenmodul und herstellungsverfahren hierfür |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102010017246A DE102010017246A1 (de) | 2010-06-04 | 2010-06-04 | Solarzellenmodul und Herstellungsverfahren hierfür |
DE102010017246.4 | 2010-06-04 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2012022312A2 true WO2012022312A2 (de) | 2012-02-23 |
WO2012022312A3 WO2012022312A3 (de) | 2012-08-09 |
Family
ID=44970903
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE2011/075121 WO2012022312A2 (de) | 2010-06-04 | 2011-05-27 | Solarzellenmodul und herstellungsverfahren hierfür |
Country Status (7)
Country | Link |
---|---|
US (1) | US20130104965A1 (de) |
EP (1) | EP2577739A2 (de) |
JP (1) | JP2013527622A (de) |
CN (1) | CN102959733A (de) |
AU (1) | AU2011291158B2 (de) |
DE (1) | DE102010017246A1 (de) |
WO (1) | WO2012022312A2 (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9082914B2 (en) | 2012-01-13 | 2015-07-14 | Gaurdian Industries Corp. | Photovoltaic module including high contact angle coating on one or more outer surfaces thereof, and/or methods of making the same |
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- 2011-05-27 AU AU2011291158A patent/AU2011291158B2/en not_active Ceased
- 2011-05-27 US US13/701,757 patent/US20130104965A1/en not_active Abandoned
- 2011-05-27 JP JP2013512759A patent/JP2013527622A/ja active Pending
- 2011-05-27 WO PCT/DE2011/075121 patent/WO2012022312A2/de active Application Filing
- 2011-05-27 EP EP11782375.7A patent/EP2577739A2/de not_active Withdrawn
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DE102010017246A1 (de) | 2011-12-08 |
CN102959733A (zh) | 2013-03-06 |
JP2013527622A (ja) | 2013-06-27 |
EP2577739A2 (de) | 2013-04-10 |
AU2011291158A1 (en) | 2013-01-10 |
US20130104965A1 (en) | 2013-05-02 |
AU2011291158B2 (en) | 2014-04-10 |
WO2012022312A3 (de) | 2012-08-09 |
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