WO2012005457A2 - Dispositif électroluminescent organique à haute efficacité - Google Patents

Dispositif électroluminescent organique à haute efficacité Download PDF

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WO2012005457A2
WO2012005457A2 PCT/KR2011/004585 KR2011004585W WO2012005457A2 WO 2012005457 A2 WO2012005457 A2 WO 2012005457A2 KR 2011004585 W KR2011004585 W KR 2011004585W WO 2012005457 A2 WO2012005457 A2 WO 2012005457A2
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host
difference
energy level
electron transport
layer
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WO2012005457A3 (fr
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이준엽
전순옥
손효석
육경수
장상억
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Industry Academic Cooperation Foundation of Dankook University
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/10—Triplet emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/30—Highest occupied molecular orbital [HOMO], lowest unoccupied molecular orbital [LUMO] or Fermi energy values

Definitions

  • the present invention relates to a high efficiency organic electroluminescent device for improving the low efficiency of the existing organic light emitting device, in particular, the low efficiency of the pure blue organic light emitting device.
  • the organic light emitting device has a simpler structure, has various advantages in manufacturing process, and has high luminance and viewing angle compared to other flat panel display devices such as a liquid crystal display (LCD), a plasma display panel (PDP), and a field emission display (FED). Due to its excellent characteristics, fast response speed and low driving voltage, development is being actively conducted to be used as a light source for a flat panel display such as a wall-mounted TV or a back light of a display, an illumination, a billboard.
  • LCD liquid crystal display
  • PDP plasma display panel
  • FED field emission display Due to its excellent characteristics, fast response speed and low driving voltage, development is being actively conducted to be used as a light source for a flat panel display such as a wall-mounted TV or a back light of a display, an illumination, a billboard.
  • organic light emitting diodes recombine holes injected from the anode and electrons injected from the cathode when DC voltage is applied to form exciton, an electron-hole pair, and the excitons return to a stable bottom ecology to emit corresponding energy. It is converted to light by transmitting it to the material.
  • a low-voltage driving organic light emitting device is reported by forming a stacked organic thin film between two opposite electrodes by CW Tang of Eastman Kodak Corporation (CW Tang, SA Vanslyke, Applied Physics). Letters, Vol. 51, p. 913, 1987), studies on organic materials for multilayer thin film structured organic light emitting diodes have been actively conducted.
  • the lifetime of the stacked organic light emitting diode is deeply related to the stability of the thin film and the material. For example, when the thermal stability of the material is inferior, crystallization of the material occurs at a high temperature or a driving temperature, which causes a shortening of the life of the device.
  • Triazine compounds, oxadiazole compounds, benzimidazole compounds, phenyl pyridine compounds, silicone compounds and the like are known.
  • these compounds have a problem in that they do not implement excellent efficiency characteristics in the organic EL device, the host material that can implement excellent characteristics in the blue phosphorescent device is very limited.
  • US Patent Publication No. 2009/0121624 A1 discloses an organic light emitting device that improves stability by controlling a doping concentration ratio between a light emitting layer having a high triplet energy and a host and a hole blocking layer having a high triplet energy, but fails to realize high efficiency. There was a problem that the efficiency is reduced at high brightness.
  • the present invention is to solve the problem that the efficiency is reduced at low efficiency and high brightness of the conventional organic light emitting device, the homogeneous (MOMO) and LUMO (LUMO) energy level of the charge transport material and the host and the charge transport material and dopant
  • MOMO homogeneous
  • LUMO LUMO
  • An object of the present invention is to provide a highly efficient organic light emitting device.
  • the present invention includes a first electrode, a second electrode, a hole transport layer, an electron transport layer, and a light emitting layer, wherein the light emitting layer comprises a host and a dopant,
  • the difference in the HOMO energy level between the hole transport material and the host in the hole transport layer is 0.2 eV or less
  • the difference in the LUMO energy level between the electron transport material and the host of the electron transport layer is 0.2 eV or less
  • the difference in the LUMO energy level between the hole transport material and the host in the hole transport layer is 0.2 eV or more
  • the difference in the HOMO energy level between the electron transport material and the host in the electron transport layer is 0.2 eV or more
  • the triplet energy of the hole transport material in the hole transport layer is greater than the triplet energy of the dopant
  • the triplet energy of the electron transport material of the electron transport layer provides an organic light emitting device, characterized in that greater than the triplet energy of the dopant.
  • the triplet energy of the host is 2.8 eV or more, and the triplet energy of the dopant is more preferably 2.7 eV or more.
  • the difference between the two values ((AB) when comparing the difference (A) of the HOMO energy level between the host and the dopant and the difference (LU) of the LUMO energy level between the host and the dopant ((AB)) Absolute value) is 0.2 eV or less.
  • the host of the light emitting layer includes a first host and a second host
  • An electron transport material of an electron transport layer and a host having a LUMO energy level having a small difference from an electron transport material among the first host and the second host;
  • the difference in LUMO energy levels between the two is 0.2 eV or less
  • a hole transport material of a hole transport layer and a host having a LUMO energy level having a small difference from an electron transport material among the first host and the second host;
  • the difference in the LUMO energy level between is 0.2 eV or more
  • An electron transport material of the electron transport layer and a host having a homo energy (HOMO) energy level value different from the hole transport material in the first host and the second host; HOMO energy level difference between is 0.2eV or more,
  • HOMO homo energy
  • C Homo energy level difference
  • D LUMO energy level difference
  • the organic light emitting device may further include one or more layers selected from an electron blocking layer, a hole blocking layer, an electron injection layer, and a hole injection layer.
  • the high-efficiency organic light emitting device of the present invention has a similar balance between charges according to voltages by appropriately controlling the triplet energy of the HOMO and LUMO energy levels of the charge transport material and the host and the charge transport material and the dopant. It is possible to maintain high efficiency, to balance charges in the light emitting layer, to bind excitons in the light emitting layer, to obtain high efficiency, and to suppress efficiency reduction at high luminance.
  • 1 is a view schematically showing the energy level of the organic layer of the organic light emitting device according to the present invention.
  • FIG. 2 is a view schematically showing the structure of an organic light emitting device according to the present invention.
  • FIG. 1 is a view showing the energy level of the organic layer of the organic light emitting device of the present invention
  • Figure 2 is a view schematically showing the structure of the organic light emitting device of the present invention.
  • the organic light emitting device includes a first electrode 110, a second electrode 150, a hole transport layer 120, an electron transport layer 140, and the light emitting layer 130, the light emitting layer Reference numeral 130 is an organic electroluminescent device including a host and a dopant, and the difference between the hole occupied molecular orbital (HOMO) energy level value (c) between the hole transport material and the host of the hole transport layer 120 is 0.2 eV or less.
  • HOMO hole occupied molecular orbital
  • the difference between the electron transport material of the electron transport layer 140 and the host Lumo energy level value (d) is 0.2 eV or less, and between the hole transport material and the host of the hole transport layer 120
  • the LUMO energy level difference (a) is 0.2 eV or more
  • the homogeneous (HOMO) energy level value difference (b) between the electron transport material and the host of the electron transport layer 140 is 0.2 eV or more
  • the hole transport layer The triplet energy of the hole transport material of 120) is greater than the triplet energy of the dopant.
  • the triplet energy of the electron transporting material in the electron transport layer 140 provides an organic electroluminescent device is larger than the triplet energy of the dopant.
  • the difference between the hole transport material and the host (HMO) energy level value (c) between the hole transport material 120 and the host exceeds 0.2 eV, or the electron transport material and the host of the electron transport layer 140 If the difference between the low unoccupied molecular orbital (LUMO) energy level (d) exceeds 0.2 eV, it is difficult to control the charge balance and the efficiency of the brightness decreases due to the difference in the charge balance. Not.
  • the difference (a) of the LUMO energy level between the hole transport material and the host of the hole transport layer 120 is less than 0.2 eV, or the homo (HOMO) between the electron transport material and the host of the electron transport layer 140.
  • the energy level difference (b) is less than 0.2 eV, charge leakage is difficult to prevent, which is not preferable.
  • the exciton when the triplet energy of the hole transport material of the hole transport layer 120 is less than or equal to the triplet energy of the dopant, or the triplet energy of the electron transport material of the electron transport layer 140 is less than or equal to the triplet energy of the dopant, the exciton emits light. Hard to bind to is undesirable.
  • the triplet energy of the host is 2.8 eV or more, and the triplet energy of the dopant is more preferably 2.7 eV or more. If the triplet energy of the host is less than 2.8 eV or the triplet energy of the dopant is less than 2.7 eV, it is not preferable because it is difficult to realize a deep blue organic electroluminescent phosphor.
  • the difference between the two values ((AB) when comparing the difference (A) of the HOMO energy level between the host and the dopant and the difference (LU) of the LUMO energy level between the host and the dopant ((AB)) Absolute value) is 0.2 eV or less.
  • the difference between the two values exceeds 0.2 eV, it is difficult to minimize the change of efficiency characteristics of the device with voltage, which is not preferable.
  • the host of the light emitting layer includes a first host and a second host, a hole transport material of the hole transport layer; and a homogeneous small difference between the hole transport material among the first host and the second host (HOMO) a host having an energy level; HOMO energy level difference between 0.2eV or less, the electron transport material of the electron transport layer; and the host having a LUMO energy level value of the difference between the electron transport material of the first host and the second host is small ;
  • the difference between the LUMO energy level values is 0.2 eV or less, a hole transport material in the hole transport layer; and a host having a LUMO energy level value having a small difference from the electron transport material in the first and second hosts.
  • the difference between the LUMO energy level values is 0.2 eV or more and the electron transport material of the electron transport layer; and a host having a homo energy (HOMO) energy level value that is smaller than the hole transport material among the first host and the second host.
  • HOMO homo energy
  • a difference between the HOMO energy level values is 0.2 eV or more and a dopant; and a host having a HOMO energy level value smaller than the dopant among the first host and the second host;
  • D LUMO energy level difference
  • the organic light emitting device may further include at least one layer selected from an electron blocking layer, a hole blocking layer, an electron injection layer, and a hole injection layer to improve the luminous efficiency.
  • the organic light emitting device is preferably supported by a transparent substrate.
  • the material of the transparent substrate is not particularly limited as long as it has good mechanical strength, thermal stability and transparency.
  • glass, a transparent plastic film, etc. can be used.
  • anode material of the organic EL device of the present invention a metal, an alloy, an electrically conductive compound having a work function of 4 eV or more, or a mixture thereof can be used.
  • transparent conductive materials such as Au or CuI, ITO (indium tin oxide), SnO 2 and ZnO which are metals are mentioned.
  • the thickness of the positive electrode film is preferably 10 to 200 nm.
  • a metal, an alloy, an electrically conductive compound or a mixture thereof having a work function of less than 4 eV can be used.
  • Na, Na-K alloy, calcium, magnesium, lithium, lithium alloy, indium, aluminum, magnesium alloy, aluminum alloy is mentioned.
  • aluminum / AlO 2 , aluminum / lithium, magnesium / silver or magnesium / indium may be used.
  • the thickness of the negative electrode film is preferably 10 to 200 nm.
  • at least one electrode should preferably have a light transmittance of 10% or more.
  • the sheet resistance of the electrode is preferably several hundred ⁇ / mm or less.
  • the thickness of the electrode is 10 nm to 1 mu m, preferably 10 to 400 nm.
  • Such an electrode may be manufactured by forming the above electrode material into a thin film through vapor deposition or sputtering such as chemical vapor deposition (CVD), physical vapor deposition (PVD), or the like.
  • the hole transporting material and the hole injecting material may be arbitrarily selected from materials commonly used as the hole transporting material among photoconductive materials and known materials used for forming the hole transporting layer or the hole injecting layer of the organic EL device.
  • materials commonly used as the hole transporting material among photoconductive materials and known materials used for forming the hole transporting layer or the hole injecting layer of the organic EL device For example, N, N-dicarbazolyl-3,5-benzene (mCP), poly (3,4-ethylenedioxythiophene): polystyrenesulfonate (PEDOT: PSS), N, N'-di (1-naphthyl) -N, N '-diphenylbenzidine (NPD), N, N'-diphenyl-N, N'-di (3-methylphenyl) -4,4'-diaminobiphenyl (TPD), N, N'-diphenyl-N, N'-Dinaphthyl-4,4'
  • the electron transport layer includes known electron transport materials such as diphenylphosphine oxide-4- (triphenylsilyl) phenyl (TSPO1), Alq 3 , 2,5-diaryl silol derivative (PyPySPyPy), perfluorinated compound (PF-6P) , Octasubstituted cyclooctatetraene compounds (COTs) and the like can be mixed.
  • known electron transport materials such as diphenylphosphine oxide-4- (triphenylsilyl) phenyl (TSPO1), Alq 3 , 2,5-diaryl sil derivative (PyPySPyPy), perfluorinated compound (PF-6P) , Octasubstituted cyclooctatetraene compounds (COTs) and the like can be mixed.
  • the electron injection layer, the electron transport layer, the hole injection layer and the hole transport layer are formed of a single layer containing one or more kinds of the above-mentioned compounds, or stacked on top of each other, It may consist of a plurality of layers to contain.
  • Each layer constituting the organic EL device of the present invention can be formed into a thin film through a known method such as vacuum deposition, spin coating or casting, or can be produced using a material used in each layer.
  • a material used in each layer There is no particular limitation on the film thickness of each layer, and it can be appropriately selected depending on the properties of the material, but can usually be determined in the range of 2 nm to 5000 nm.
  • a blue phosphorescent light emitting device was manufactured using the above compound, and the characteristics of the organic compound were evaluated.
  • the analysis data obtained by nuclear magnetic resonance and mass spectrometry are as follows.
  • the analysis data obtained by nuclear magnetic resonance and mass spectrometry are as follows.
  • the compound 1 having phenyl as a core structure and carbazole units substituted with carbazole units and diphenylphosphine oxide as two units having different energy levels was used as a host.
  • a blue phosphorescent device was constructed using Compound 1 and bis ((3,5-difluoro-4-cyanophenyl) pyridine) iridium picolinate (FCNIrpic), which is known as a blue dopant.
  • Compound 1 showed a triplet energy of 3.00 eV, and the material used as a dopant showed a triplet energy of 2.72 eV.
  • the HOMO energy level of Compound 1, which is a host, was 6.13 eV, and the LUMO energy level was 2.64 eV.
  • mCP N, N-dicarbazolyl-3,5-benzene
  • mCP N, N-dicarbazolyl-3,5-benzene
  • TSPO1 was used as the electron transport layer material, and TSPO1 exhibited triplet energy 3.19 eV and LUMO energy level 2.52 eV.
  • Fabrication of the device was performed in the following manner.
  • the ITO substrate was washed with pure water and isopropyl alcohol for 30 minutes in ultrasonic waves, and the surface of the ITO substrate was treated with short wavelength ultraviolet rays, and the organic material was vacuum deposited under a pressure of 1 ⁇ 10 ⁇ 6 torr.
  • polystyrenesulfonate PEDOT: PSS
  • NPD N, N'-di (1-naphthyl) -N, N'-diphenylbenzidine
  • mCP diphenylphosphine oxide-4- (triphenylsilyl) phenyl
  • TSPO1 triphenylsilyl phenyl
  • LiF was formed at a thickness of 1 nm at a rate of 0.01 nm / s, and Al was formed at a thickness of 100 nm at a deposition rate of 0.5 nm / sec. After the device was formed, the device was sealed using a CaO absorbent and a glass cover glass.
  • the structure of the device was ITO / PEDOT: PSS (60nm) / NPD (20nm) / mCP (10nm) / Compound 1: FCNIrpic (30nm, 3%) / TSPO1 (20nm) / LiF / Al.
  • the difference in HOMO energy level between the hole transport layer and the light emitting layer was 0.03 eV, and the LUMO energy level barrier between the electron transport layer and the light emitting layer was 0 eV.
  • the triplet energy of the hole transport layer and the electron transport layer is higher than the triplet energy of the light emitting material dopant.
  • the LUMO of mCP was 2.4 eV and the HOMO of TSPO1 was 6.79 eV, and the energy barrier of leakage of charge satisfies 0.2 eV or more.
  • the dopant FCNIrpic had a HOMO energy level of 5.72 eV and a LUMO energy level of 2.98 eV.
  • the blue organic light emitting diode fabricated in the present invention showed a maximum quantum efficiency of 25.1% and a quantum efficiency of 22.8% based on 1,000 cd / m 2.
  • the efficiency reduction at 1000 cd / m2 compared to the maximum efficiency was less than 10%.
  • the core structure synthesized in the present invention is compound 2 having phenyl and carbazole units having two substituted carbazole units and diphenylphosphine oxide as two hosts with different energy levels, and FCNIrpic as a blue dopant. A blue phosphorescent device was used.
  • Compound 2 showed a triplet energy of 3.00 eV, and the material used as the dopant showed a triplet energy of 2.8 eV.
  • the HOMO energy level of Compound 2 was 6.13 eV and the LUMO energy level was 2.77 eV.
  • MCP was applied as a material for the hole transport layer, and mCP showed a triplet energy of 2.90 eV and a HOMO energy level of 6.1 eV.
  • TSPO1 was used as the electron transport layer material, and TSPO1 exhibited triplet energy 3.19 eV and LUMO energy level 2.52 eV.
  • the device was fabricated in the same manner as in Example 1, except that Compound 2 was used instead of Compound 1.
  • the structure of the device was ITO / PEDOT: PSS (60nm) / NPD (20nm) / mCP (10nm) / Compound 2: FCNIrpic (30nm, 3%) / TSPO1 (20nm) / LiF / Al.
  • the difference in HOMO energy level between the hole transport layer and the light emitting layer was 0.03 eV, and the LUMO energy level barrier between the electron transport layer and the light emitting layer was 0 eV.
  • the triplet energy of the hole transport layer and the electron transport layer is higher than the triplet energy of the light emitting material dopant.
  • the LUMO of mCP was 2.4 eV and the HOMO of TSPO1 was 6.79 eV, and the energy barrier of leakage of charge satisfies 0.2 eV or more.
  • the dopant FCNIrpic had a HOMO energy level of 5.72 eV and a LUMO energy level of 2.98 eV.
  • the blue organic EL device manufactured in the present invention exhibited a maximum quantum efficiency of 24.3% and 19.8% based on 1,000 cd / m 2.
  • the efficiency reduction at 1000 cd / m2 compared to the maximum quantum efficiency was less than 20%.
  • the device was fabricated in the same manner as in Example 1, except that Compound 1 was not used as the host material of the emission layer, mCP was used instead, TSPO1 was not used as the electron transport material, and Bphen was used instead.
  • the structure of the device is ITO / PEDOT: PSS (60nm) / NPD (20nm) / mCP (10nm) / mCP: FCNIrpic (30nm, 3%) / 4,7-diphenyl-1,10-phenanthroline (Bphen, 20nm) / LiF / Al.
  • the fabricated device was a device in which the LUMO energy barrier between the hole transport layer and the light emitting layer host was 0 eV, and the HOMO energy barrier between the electron transport layer and the light emitting layer host was 0 eV.
  • the blue organic EL device manufactured in the present invention showed a maximum quantum efficiency of 8.8% and a quantum efficiency of 6.3% based on 1,000 cd / m 2. An efficiency reduction of about 30% was shown at 1000 cd / m2 compared to the maximum quantum efficiency.
  • the device was fabricated in the same manner as in Example 1, except that Compound 1 was not used as the host material of the emission layer and mCP was used instead.
  • the structure of the device was ITO / PEDOT: PSS (60nm) / NPD (20nm) / mCP (10nm) / mCP: FCNIrpic (30nm, 3%) / TSPO1 (20nm) / LiF / Al.
  • the device fabricated was a device having a LUMO energy barrier of 0 eV between the hole transport layer and the light emitting layer host.
  • the fabricated blue organic light emitting device showed a maximum quantum efficiency of 8.0% and a quantum efficiency of 5.6% at 1,000 cd / m2. An efficiency reduction of about 30% was shown at 1000 cd / m2 compared to the maximum quantum efficiency.
  • the organic electroluminescent device of the present invention by appropriately controlling the homogeneous (HOMO) and LUMO (LUMO) energy level of the charge transport material and the host and triplet energy of the charge transport material and the dopant, By maintaining the balance of charge according to the voltage similarly, balancing the charge in the light emitting layer and binding excitons in the light emitting layer, high efficiency can be obtained and the efficiency reduction at high brightness can be suppressed.
  • HOMO homogeneous
  • LUMO LUMO
  • the high-efficiency organic light emitting device of the present invention adjusts the homogeneous (HOMO) and LUMO (LUMO) energy levels of the charge transport material and the host, and triplet energy of the charge transport material and the dopant to adjust the balance of charge according to voltage. It is possible to maintain high efficiency, to balance charges in the light emitting layer, to bind excitons in the light emitting layer, to obtain high efficiency, and to suppress efficiency reduction at high luminance.
  • HOMO homogeneous
  • LUMO LUMO

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Abstract

La présente invention comprend une première électrode, une seconde électrode, une couche de transport de trous, une couche de transport d'électrons et une couche électroluminescente. Dans le dispositif électroluminescent organique dont la couche électroluminescente comprend un hôte et un agent dopant, la différence de niveau d'énergie HOMO entre l'hôte et le matériau de transport de trous de la couche de transport de trous est inférieure à 0,2 eV. La différence de niveau d'énergie LUMO entre l'hôte et le matériau de transport d'électrons de la couche de transport d'électrons est inférieure à 0,2 eV. La différence de niveau d'énergie LUMO entre l'hôte et le matériau de transport de trous de la couche de transport de trous est supérieure à 0,2 eV. La différence de niveau d'énergie HOMO entre l'hôte et le matériau de transport d'électrons de la couche de transport d'électrons est supérieure à 0,2 eV. Le dispositif électroluminescent organique est caractérisé en ce que le matériau de transport de trous de la couche de transport de trous a une énergie de triplet qui est supérieure à celle de l'agent dopant et le matériau de transport d'électrons de la couche de transport d'électrons a une énergie de triplet supérieure à celle de l'agent dopant. Le dispositif électroluminescent organique à haute efficacité selon la présente invention peut maintenir l'équilibre des charges électriques en fonction de la tension, acquérir l'équilibre des charges électriques dans la couche électroluminescente et lier des excitons dans la couche électroluminescente, ce qui assure une efficacité élevée.
PCT/KR2011/004585 2010-07-06 2011-06-23 Dispositif électroluminescent organique à haute efficacité Ceased WO2012005457A2 (fr)

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CN111710788A (zh) * 2015-08-07 2020-09-25 株式会社半导体能源研究所 发光元件、显示装置、电子设备及照明装置
CN115298723A (zh) * 2020-03-26 2022-11-04 夏普株式会社 发光元件、显示装置

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KR102129266B1 (ko) * 2014-04-30 2020-07-03 삼성디스플레이 주식회사 유기 발광 표시 장치
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WO2016105036A1 (fr) * 2014-12-22 2016-06-30 주식회사 두산 Élément électroluminescent organique
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