WO2011161311A1 - Appareil de revêtement - Google Patents

Appareil de revêtement Download PDF

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Publication number
WO2011161311A1
WO2011161311A1 PCT/FI2011/050570 FI2011050570W WO2011161311A1 WO 2011161311 A1 WO2011161311 A1 WO 2011161311A1 FI 2011050570 W FI2011050570 W FI 2011050570W WO 2011161311 A1 WO2011161311 A1 WO 2011161311A1
Authority
WO
WIPO (PCT)
Prior art keywords
chamber
atomizer
deposition chamber
coating
deposition
Prior art date
Application number
PCT/FI2011/050570
Other languages
English (en)
Inventor
Erkki SEPPÄLÄINEN
Paavo Timonen
Joonas Ilmarinen
Kai Toivanen
Original Assignee
Beneq Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beneq Oy filed Critical Beneq Oy
Publication of WO2011161311A1 publication Critical patent/WO2011161311A1/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/10—Deposition methods
    • C03C2218/15—Deposition methods from the vapour phase
    • C03C2218/152—Deposition methods from the vapour phase by cvd

Definitions

  • the invention relates to an apparatus for forming a coating on a substrate.
  • the coating is formed from a precursor which is an aerosol comprising liquid droplets and/or solid particles, commonly called as particulate material.
  • the droplets are essentially evaporated before hitting the substrate.
  • the invented apparatus comprises an atomizer placed inside an atomization chamber in such a way that the atomizer is placed asymmetrically into the atomization chamber so that the distance of the atomized spray to the chamber outlet wall is shorter than the distance to the chamber inlet wall.
  • Substrates made from various materials such as glass, metal, ceramics, semiconducting materials or plastics are coated for various purposes, the coating being selected to confer some particular desired property on the substrate.
  • coatings on glass are those designed to reduce the emissivity of the coated face in respect to infrared radiation (low-e coatings), coatings designed to reduce the total solar energy transmittance and coatings designed to provide a hydrophilic or self-cleaning glass surface.
  • TCO transparent conductive oxide
  • fluorine doped tin oxide (FTO) or aluminum doped zinc oxide coatings serve well for TCO and low-e coatings
  • titanium oxide coatings especially with anatase crystal structure
  • iron-cobalt-chrome-based oxide coatings serve well for near-infrared reflection coatings.
  • Coatings can be divided into two different groups, soft coatings and hard coatings.
  • Soft coatings are typically applied by sputtering and their adhesion to the substrate surface is rather poor.
  • Hard coatings which typically have an outstanding adhesion and high abrasion resistance are typically applied by pyrolytic methods, such as Chemical Vapor Deposition (CVD) and spray-pyrolysis.
  • CVD Chemical Vapor Deposition
  • the coating precursor material is in vapor phase and the vapor is caused to enter a coating chamber and flow as a well controlled and uniform current with the substrate being coated.
  • the coating formation rate is rather slow and thus the process is typically carried out at temperatures exceeding 650°C, as the coating growth rates typically increases exponentially as the temperature is raised.
  • the rather high temperature requirement makes CVD -process rather complicated.
  • a great improvement to the process can be achieved by decreasing the size of the droplets as described in the applicant's Finnish patent applications FI20071003 and FI20080217.
  • the coating process described in those patent applications is commonly called Aerosol Assisted CVD, AACVD.
  • AACVD Aerosol Assisted CVD
  • the liquid droplets can also be dried or combusted to generate an aerosol comprising solid particles,
  • AACVD coating precursors where the precursor material comprises gas and liquid droplets and/or solid particles generally require turbulent mixing of the aerosol (i.e. combination of the liquid droplets and/or solid particles and the surrounding gas).
  • the flow rate of the aerosol is high, which is opposite to the practice commonly applied in the CVD process. Guiding such a turbulent flow with common CVD apparatus does not generally lead to good coating quality.
  • the main purpose of the present invention is to introduce an apparatus to be used in applying an AACVD process solving the above mentioned technical problems.
  • Aerosol assisted CVD achieves higher growth rates than a traditional CVD. Hence, if the diffusion rate is higher than in a CVD reactor, it may actually be at such a level that the reaction speed becomes the limiting factor for the coating growth. At present, it is not fully determined whether the AACVD process is diffusion or reaction speed limited. Nevertheless, the normal velocity component at the interface of gas and glass surface is directly proportional to the mass flux towards the surface, leading to the fact that the mass transfer rate is strongly coupled to the velocity field.
  • the temperature mainly affects the growth rate and stress formation, while precursors govern the properties of the coating. Due to chemical processes, there is a link between precursor recipe and growth rate as well. However, given that the temperature level is adequate, that is, the process in not reaction speed limited, no uniform coating can be achieved if the flow pattern is not uniform. That is because in this case the diffusion rate limits the growth rate, and thus uneven concentration and velocity distribution results in an uneven growth rate profile.
  • Turbulent flow regime provides higher growth rates and more uniform layer thickness compared to laminar flow due to better mixing and enhanced mass transfer. Thus it Is preferable to maintain the Reynolds number rather high, i.e. in the turbulent region.
  • the aerosol droplets As it is necessary for the aerosol droplets to evaporate before reaching the substrate surface, temperature control within the atomizer chamber is significant. Optimally, the droplet should have evaporated before reaching the substrate, but, on the other hand, if evaporation takes place too early, the precursors may react already at the gas phase and thus reduce the coating efficiency.
  • Atomizer chamber temperature can be controlled with active heating or cooling of the chamber walls, precursor composition, and steam injection rate and properties. The reactive gases tend to cause layer growth on all the hot surfaces they encounter, and in order to prevent deposition on surfaces where it is unwanted, temperature control is an effective way to reduce it. However, not all surfaces can be maintained at low temperatures because of process requirements. The flow patterns have an impact on clogging, often called soiling.
  • Soiling means accumulation of material to places where it is not wanted, that is, deposition on the coating unit walls and inlet channels. Soiling increases the need to clean the coating reactor, and thus decreases the utilization time. This unwanted phenomenon can be reduced by designing the reactor in such a way that conditions favorable to soiling are avoided.
  • the mechanisms of soiling are the same as those of deposition on the substrate surface. Reactive materials plus sufficient temperature are required. Temperature control of the coating unit wall surfaces is essential to be able to control the soiling.
  • Fig. 1 shows the status of the prior art
  • Fig. 2A,2B show an embodiment of the current invention with an asymmetrically placed atomizer
  • Fig. 3 shows an embodiment of the current invention with an inclined atomizer
  • Fig. 4 shows an embodiment of the current invention with an inclined atomizer
  • Fig. 5 shows an embodiment of the current invention with a decreased height of the deposition chamber inlet.
  • FIG. 1 shows a principle of the prior-art AACVD apparatus A 0 .
  • Substrate 1 to be coated moves in the apparatus from left to right.
  • the conveyor mechanism for moving the substrate is trivial for a person skilled in the art: It can be e.g. a moving belt, rollers, air bed or similar, or the substrate can be a moving ribbon, like a glass ribbon in a glass manufacturing float line.
  • the substrate 1 enters to the coating deposition zone via an inlet channel 7.
  • the apparatus A 0 comprises an atomizer chamber 4 with walls Wl and W2 separating the chamber 4 from the rest of the equipment A 0 in the direction of the substrate 1 movement.
  • Atomizer chamber 4 is equipped with an atomizer 3, which produces droplets 5 and thus an aerosol Aer is formed.
  • the aerosol Aer moves forward into the deposition chamber 6 where a coating 2 is formed on the substrate 1.
  • the formation mechanism is preferably a pyrolysis reaction but may be some other reaction like solvent evaporation as well.
  • the remaining precursor as well as the reaction products are exhausted through channel 9.
  • the atomizer 3 is typically placed into the atomizer chamber 4 so that the distance a of the spray 3S, in particular, the spray centerline, from each of the chamber walls Wl and W2 is equal. Furthermore, it is found that such an arrangement causes an unwanted aerosol Aer flow upstream from the atomizer chamber 4, which is marked in Fig. 1 by area 8. Such a backward aerosol Aer flow causes uncontrolled deposition of the coating 2 and makes the coating 2 uneven with suboptimal properties.
  • Figure 2A shows one embodiment of the current invention. It shows apparatus A for forming a coating 2 on a substrate 1 by Aerosol Assisted Chemical Vapor Deposition (AACVD) method.
  • Apparatus A comprises an atomizer 3 for turning the liquid precursor into droplets 5.
  • the atomizer 3 is placed into an atomizer chamber 4 for mixing the aerosol.
  • a deposition chamber 6 is placed downward from the atomizer chamber 4, and the atomizer chamber 4 is restricted in the direction of the aerosol flow by the wall Wl next to the deposition chamber 6 and an opposite wall W2.
  • the distance b of the atomized spray 3S measured, in particular, from the spray centerline, from the wall Wl next to the deposition chamber 6 is shorter than the distance a from the opposite wall W2 in at least one part of the atomizer chamber 4. It is found that such arrangement is essential for substantially decreasing the coating deposition in area 8, resulting in an outstanding coating 2 by the AACVD method, the coating possessing e.g. good uniformity, in particular low thickness variation.
  • the distances a and b are chosen so that b ⁇ 0.5xa, and more
  • the coating quality may further be improved, at least with certain precursors and coating materials, by heating the aerosol Aer.
  • One embodiment of the invented apparatus A comprises a heater H to heat at least part of at least one of the chamber walls Wl and/or W2 of the atomizer chamber 4 to a temperature which is greater than the temperature of the aerosol (Aer) and preferably high enough to avoid liquid condensation.
  • Figure 2B shows the same embodiment as Figure 2A but emphasizes the fact that the distance b, being shorter than distance a, may be realized in a partly asymmetric fashion in the atomizer chamber 4 by letting the dimensions of the atomizer chamber vary, preferably placing the asymmetry close to the chamber exit to realize the advantageous effects of the present invention. It is obvious for a person skilled in the art that the walls of the atomizer chamber 4 may have various different forms as long as the inventive features presented in the claims are fulfilled.
  • Figure 3 shows another embodiment of the current invention. It shows apparatus A for forming a coating 2 on a substrate 1 by Aerosol Assisted Chemical Vapor Deposition (AACVD) method.
  • Apparatus A comprises an atomizer 3 for turning the liquid precursor into droplets 5.
  • the atomizer 3 is at least partially inclined or tilted towards wall Wl so that the distance b of the atomized spray, defined as the distance of the spray 3S, measured in particular from the spray centerline, from the wall Wl next to the deposition chamber 6 is shorter than the distance a from the opposite wall W2 in at least one part of the atomizer chamber 4.
  • Figure 3 illustrates especially how the position of the atomizer (relative to the sidewalls) is not an indication of the location of the spray centerline.
  • Essential to the current invention is the asymmetry of the spray centerline relative to the atomizer chamber walls, not the location of the atomizer.
  • Figure 4 shows another embodiment of the invention. It is also found that the advantageous effects of the distance b difference to distance a can be further enhanced by inclining the atomizer chamber 4 so that the angle of at least part of at least one of the atomizer chamber walls Wl, W2 with surface of the substrate 1 is not a straight angle. It is also beneficial for the invented apparatus that the height h* of the deposition chamber 6 is greater than the height h of the substrate inlet channel 7.
  • FIG. 5 shows yet another embodiment of the invention. It is also found that the
  • the apparatus A where the height h** of at least one part of the deposition chamber 6 inlet is lower than the height h* of the deposition chamber 6, the inlet length L* forming less than 20% of the length L of the deposition chamber 6.
  • the lowered inlet height is arranged by a smoothly curved protuberance having height (h**) lower than the height (h*) of the deposition chamber.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Dispersion Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

L'invention concerne un appareil (A) de dépôt chimique en phase vapeur assisté par aérosol (AACVD) pour former un revêtement (2) sur un substrat (1). L'appareil comprend un atomiseur (3) pour transformer le précurseur liquide en gouttelettes (5), une chambre d'atomisation (4) pour mélanger l'aérosol, et une chambre de dépôt (6) pour déposer le revêtement (2) sur le substrat (1). La chambre de dépôt (6) se trouve en aval de la chambre d'atomisation (4), et la chambre d'atomisation (4) est limitée dans la direction du flux d'aérosol par la paroi (W1) jouxtant la chambre de dépôt (6) et une paroi opposée (W2). La distance du jet atomisé (3S) depuis la paroi (W1) jouxtant la chambre de dépôt (6) est plus courte que la distance depuis la paroi opposée (W2) dans au moins une partie de la chambre d'atomisation (4).
PCT/FI2011/050570 2010-06-21 2011-06-16 Appareil de revêtement WO2011161311A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI20105719A FI20105719A0 (fi) 2010-06-21 2010-06-21 Pinnoituslaite
FI20105719 2010-06-21

Publications (1)

Publication Number Publication Date
WO2011161311A1 true WO2011161311A1 (fr) 2011-12-29

Family

ID=42308172

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FI2011/050570 WO2011161311A1 (fr) 2010-06-21 2011-06-16 Appareil de revêtement

Country Status (2)

Country Link
FI (1) FI20105719A0 (fr)
WO (1) WO2011161311A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160145741A1 (en) * 2014-10-30 2016-05-26 Centro de Investigación en Materiales Avanzados, S.C. Injection nozzle for aerosols and their method of use to deposit different coatings via vapor chemical deposition assisted by aerosol
JP2019070179A (ja) * 2017-10-07 2019-05-09 株式会社Flosfia 成膜方法
WO2023199081A1 (fr) * 2022-04-11 2023-10-19 Asociacion Centro Tecnologico Ceit Procédé et système de fabrication de produits à surface structurée

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4878934A (en) * 1985-12-20 1989-11-07 Glaverbel Process and apparatus for coating glass
US4880698A (en) * 1985-12-20 1989-11-14 Glaverbel Coated flat glass
US5399388A (en) * 1994-02-28 1995-03-21 The United States Of America As Represented By The Secretary Of The Navy Method of forming thin films on substrates at low temperatures

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4878934A (en) * 1985-12-20 1989-11-07 Glaverbel Process and apparatus for coating glass
US4880698A (en) * 1985-12-20 1989-11-14 Glaverbel Coated flat glass
US5399388A (en) * 1994-02-28 1995-03-21 The United States Of America As Represented By The Secretary Of The Navy Method of forming thin films on substrates at low temperatures

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160145741A1 (en) * 2014-10-30 2016-05-26 Centro de Investigación en Materiales Avanzados, S.C. Injection nozzle for aerosols and their method of use to deposit different coatings via vapor chemical deposition assisted by aerosol
JP2019070179A (ja) * 2017-10-07 2019-05-09 株式会社Flosfia 成膜方法
JP7023445B2 (ja) 2017-10-07 2022-02-22 株式会社Flosfia 成膜方法
WO2023199081A1 (fr) * 2022-04-11 2023-10-19 Asociacion Centro Tecnologico Ceit Procédé et système de fabrication de produits à surface structurée

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