WO2011160944A1 - Leuchtstoff und lichtquelle mit derartigem leuchtstoff - Google Patents
Leuchtstoff und lichtquelle mit derartigem leuchtstoff Download PDFInfo
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- WO2011160944A1 WO2011160944A1 PCT/EP2011/059412 EP2011059412W WO2011160944A1 WO 2011160944 A1 WO2011160944 A1 WO 2011160944A1 EP 2011059412 W EP2011059412 W EP 2011059412W WO 2011160944 A1 WO2011160944 A1 WO 2011160944A1
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- phosphor
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- 239000000126 substance Substances 0.000 title abstract description 7
- 229910052605 nesosilicate Inorganic materials 0.000 claims abstract description 7
- 150000004762 orthosilicates Chemical class 0.000 claims abstract description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 54
- 230000005855 radiation Effects 0.000 claims description 24
- 238000006243 chemical reaction Methods 0.000 claims description 14
- 229910052788 barium Inorganic materials 0.000 claims description 10
- 229910052712 strontium Inorganic materials 0.000 claims description 9
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 8
- 229910052727 yttrium Inorganic materials 0.000 claims description 8
- 229910052746 lanthanum Inorganic materials 0.000 claims description 7
- 230000003595 spectral effect Effects 0.000 claims description 7
- -1 EAC12 Proteins 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000002243 precursor Substances 0.000 claims description 6
- 229910052791 calcium Inorganic materials 0.000 claims description 5
- 229910052749 magnesium Inorganic materials 0.000 claims description 5
- 239000007858 starting material Substances 0.000 claims description 5
- 150000001805 chlorine compounds Chemical class 0.000 claims description 4
- 230000004907 flux Effects 0.000 claims description 4
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 3
- 229910052765 Lutetium Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 230000006735 deficit Effects 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 2
- 101100219315 Arabidopsis thaliana CYP83A1 gene Proteins 0.000 claims description 2
- 102000011045 Chloride Channels Human genes 0.000 claims description 2
- 108010062745 Chloride Channels Proteins 0.000 claims description 2
- 102100035925 DNA methyltransferase 1-associated protein 1 Human genes 0.000 claims description 2
- 101000930289 Homo sapiens DNA methyltransferase 1-associated protein 1 Proteins 0.000 claims description 2
- 101000966913 Homo sapiens ELL-associated factor 2 Proteins 0.000 claims description 2
- 101100269674 Mus musculus Alyref2 gene Proteins 0.000 claims description 2
- 101100140580 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) REF2 gene Proteins 0.000 claims description 2
- 101100366474 Schizosaccharomyces pombe (strain 972 / ATCC 24843) rec12 gene Proteins 0.000 claims description 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- 230000003213 activating effect Effects 0.000 claims description 2
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Inorganic materials [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 claims description 2
- 238000000034 method Methods 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 claims description 2
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 2
- 150000002910 rare earth metals Chemical group 0.000 claims description 2
- 150000002222 fluorine compounds Chemical class 0.000 claims 1
- 230000000087 stabilizing effect Effects 0.000 abstract 1
- 239000000203 mixture Substances 0.000 description 36
- 230000000052 comparative effect Effects 0.000 description 5
- 150000004673 fluoride salts Chemical class 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000295 emission spectrum Methods 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000004382 potting Methods 0.000 description 2
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 238000009877 rendering Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 102100031437 Cell cycle checkpoint protein RAD1 Human genes 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 108010043121 Green Fluorescent Proteins Proteins 0.000 description 1
- 101001130384 Homo sapiens Cell cycle checkpoint protein RAD1 Proteins 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- 229910017855 NH 4 F Inorganic materials 0.000 description 1
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229940125898 compound 5 Drugs 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910001610 cryolite Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007920 subcutaneous administration Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7783—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals one of which being europium
- C09K11/77927—Silicon Nitrides or Silicon Oxynitrides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/0883—Arsenides; Nitrides; Phosphides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77348—Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
- C09K11/7774—Aluminates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/54—Screens on or from which an image or pattern is formed, picked-up, converted, or stored; Luminescent coatings on vessels
- H01J1/62—Luminescent screens; Selection of materials for luminescent coatings on vessels
- H01J1/63—Luminescent screens; Selection of materials for luminescent coatings on vessels characterised by the luminescent material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
Definitions
- the invention is based on a phosphor according to the preamble of claim 1 and a light source equipped with such a phosphor according to claim 8, in particular a conversion LED.
- a conversion LED is particularly suitable for general lighting .
- US Pat. No. 7,489,073 discloses a conversion LED which uses a modified regular ortho-silicate as the phosphor.
- Stable green phosphors especially with a Emis ⁇ sion maximum at 520-540 nm, hardly available. This complicates the use of conversion LEDs in the display backlighting and restricts the optimization of high-CRI LEDs or warm white LEDs. So far in products mainly orthosilicates are used as green fluorescent ⁇ fe for this area. These have partly high quantum efficiencies, but show insufficient aging behavior in LEDs.
- EA or AE stands here for alkaline earth elements.
- the incorporation of YN and / or LaN produces a red shift of the spectral position and mostly an improvement ⁇ tion of the quantum efficiency of the phosphor achieved.
- the LED aging behavior of this phosphor is already significantly better with the manufacturing method described there than in the conventional orthosilicates or other green Sion phosphors such.
- the object of the present invention is to create a phosphor according to the preamble of claim 1. ⁇ which allows to adapt the characteristics of nitrilotriacetic sized phosphors targeted to specific tasks.
- a novel nitridic phosphor is now provided. These include blue or blue-green to yellow emitting phosphors which can be excited in particular ⁇ sondere in the emission range of typical UV and blue LEDs and simultaneously have a very high stability in the LED. Applications can use the phosphors especially in LEDs with good color rendering, in LEDs for LCD backlighting, color-on-demand LEDs or white OLEDs.
- White LEDs are becoming increasingly important in general lighting.
- the demand for warm white LEDs is increasing with low color temperatures and good color rendition and, at the same time, high efficiency.
- alternative light ⁇ sources with good color rendering (CRI) is becoming increasingly important.
- Many consumers attach importance to lamps with light bulb-like light spectrum.
- the phosphors must meet a number of requirements: very high stability to chemical influences, such as oxygen, moisture, interactions with potting materials, as well as to radiation. In order to ensure a stable color location with increasing system temperature, phosphors are also required which have a low Temperaturlöschverhal ⁇ th. Such phosphors are used in white LEDs and color-on-demand LEDs.
- the excitation of such phosphors is preferably done with short-wave radiation in the UV and short-wave blue, in particular in the range 360 to 480 nm.
- the invention is based on the provision of phosphors from the classes of nitrido orthosilicates.
- the reactant side is expanded by S1 3 N 4 and La 2 Ü 3 or Y 2 O 3 .
- the phosphor according to claim 1, characterized in that RE La or Y alone or in combination.
- EA Sr and / or Ba ent ⁇ holds with at least 66 mol%, in particular with a proportion of Ca of maxi ⁇ times 5 mol% and in particular with a proportion of Mg of a maximum 30 mol%.
- Light source with a primary radiation source which emits radiation in the short-wave range of the optical spectral range in the wavelength range from 140 to 480 nm, this radiation by means of a first phosphor according to one of the preceding claims wholly or partly into secondary longer wave ge radiation in the visible spectral range is converted.
- a primary radiation source which emits radiation in the short-wave range of the optical spectral range in the wavelength range from 140 to 480 nm, this radiation by means of a first phosphor according to one of the preceding claims wholly or partly into secondary longer wave ge radiation in the visible spectral range is converted.
- Light source according to claim 8 characterized in that is used as primary radiation source is a light emitting diode based on InGaN or InGaAlP or a discharge lamp on low pressure or high pressure base, into ⁇ particular with a Indiumhaitigen fill, or an electroluminescent lamp.
- Light source according to claim 8 characterized in that a part of the primary radiation is further converted by means of further phosphors into longer-wave radiation, wherein the phosphors are particularly suitably chosen and mixed to produce white light.
- a method for producing a high-efficiency phosphor characterized by the following procedural ⁇ rens Coloure:
- step b) mixing the starting materials and annealing for Minim ⁇ least 1 hour in a reducing atmosphere at temperatures of Tempe ⁇ 1000 to 1500 ° C; c) optionally subsequent second annealing of the phosphor prepared in step b) at 800 to 1400 ° C.
- Conversion LED having a chip that emits primary radiation and a layer containing the chip phosphor layer that converts at least a portion of the primary radiation of the chip into secondary radiation, wherein a phosphor according to any one of claims 1 to 7 is used.
- Conversion LED according to claim 13 characterized in that is used as a further phosphor for the production of white (Lu, Y, Gd) 3 (Al, Ga) 5O12: Ce.
- ⁇ gen 1 is a conversion LED
- Figure 2 shows an LED module with remotely mounted Leucht ⁇ substance mixture.
- Figure 3 is an emission spectrum of an LCD backlight LED with a mixture of a green phosphor of type (Sr, Ba, La) 2 SII y 0 4 - x - x 2y. Eu 2+, and a red
- Fig. 5 shows a comparison of the change in the conversion ratio (green / blue emission) per 1 h determined after a previous LED operating time of about 6 h at an ambient temperature of 45 ° C and 95% humidity (LED on PCB without additional cooling mounted, LED current density 500 mA / mm 2 ).
- Figure 1 shows the structure of a conversion LED for RGB-based white light as known per se.
- the light source is a semiconductor component comprising a blue-emitting chip 1 of type InGaN with a peak emission wavelength 435-455 nm peak wavelength, for example 445 nm, which is embedded in an opaque base housing 8 in the loading ⁇ reaching a recess.
- the chip 1 is connected via a bonding wire 14 to a first terminal 3 and directly to a second electrical terminal 2.
- the recess 9 is filled with a potting compound 5 ge ⁇ which (as main components a silicone 60- 90 Wt .-%) and phosphors 6 (about 15 to 40 wt .-%) ent ⁇ holds.
- a first phosphor is a green emitting nitrido orthosilicate phosphor AE 2 - x - a RE x Eu a SII y 0 4 - x -2 y N x with AE is Ba, and RE is Y.
- a red-emitting phosphor such as a Alumonitridosilikat or calsin is ver ⁇ turns as the second phosphor.
- the recess has a wall 17 which serves as a reflector for the primary and secondary radiation from the chip 1 or the phosphors 6.
- FIG. 2 shows such a module 20 with various LEDs 24 on a base plate 21.
- a housing mon ⁇ benefits with side walls 22 and a cover plate 12.
- the phosphor Mi tion is here as a layer 25 on both the side walls and above all on the cover plate 23, which is transparent, attached.
- Other suitable light sources are fluorescent lamps or high pressure lamps, in which the novel phosphor can be used to convert the primary radiation, alone or in combination with other phosphors.
- FIG. 3 shows the spectrum of an LCD backlight LED based on two phosphors. On the abscissa is the Wel ⁇ lenate in nm plotted on the ordinate represents the relative emission intensity ⁇ .
- a first is mounted light-emitting substance is a red leuchts toff of the type CaAlSiN3: Eu
- Figure 4 shows a comparison of emission spectra of LEDs with incorporated phosphorus concentrations of 9, 13 and 20 wt .-%.
- On the abscissa is the wavelength in nm, the ordinate represents the relative emission intensity whotra ⁇ gen.
- the educts analogously to the batch mixtures 1 to 4 are, preferably together with a suitable flux, weighed and homogenized. Subsequently, the reactant mixture is annealed at temperatures between 1000 ° C and 1500 ° C for several hours under a reducing atmosphere (in particular below 2 or Ar, or a mixture of Ge ⁇ 2 / H2 or Ar / H2). This can be followed by a second annealing, likewise under a reducing atmosphere (in particular below 2 or Ar or a mixture of 2 / H 2 or Ar / H 2) at temperatures between 800 ° C. and 1400 ° C.
- the synthesis is carried out in a suitable furnace, such as a tube or chamber furnace.
- Embodiment / mixture mixture 3 73.3 g SrC0 3 , 97, 9 g BaC0 3 , 31.1 g Si0 2 , 0.4 g LaN and 7.2 g Eu 2 0 3 ; c) Embodiment / mixture mixture 3:
- FIG. 5 shows the LED stability at a temperature of 45 ° C. and 95% relative humidity for the four different batch mixtures. The ordinate is the relative conversion ratio. worn, the abscissa is the time in minutes.
- AE 2 -x- a RE x Eu a Sii-y0 4 - x - 2y x is typically made of AECO 3 , Si0 2 , REN and Eu 2 0 3 or AECO 3 , Si0 2 , Si 3 N 4 , (RE) 2 0 3 and EU 2 O 3 as starting materials.
- the rare earths are used as (RE) 2 O 3 , if preferably trivalent oxides are formed.
- rare-earth oxides which are preferably present as mixed oxides, for example Tb is usually present as III / IV mixed oxide b 4 Ü 7 , the mixed oxides are preferably used.
- Y or Sc as a nitride or a combination of oxide and S1 3 N 4 are used.
- fluorides and chlorides such as AECI2 or RECI2, AEF 2 or REC1 2, but also NH 4 Cl / NH 4 F, H 3 BO 3, LiF and cryolites, as well as combinations thereof, are used as melting agents.
- the educts analogous to the batch mixtures 1 to are weighed and homogenized together with a suitable flux.
- the educt mixture is subsequently incubated under reducing atmosphere for several hours (for example under N 2 or Ar or a mixture of N 2 / H 2 or Ar / H 2 ). annealed at temperatures between 1000 ° C and 1500 ° C. This can be followed by a second annealing, likewise under a reducing atmosphere (for example under N 2 or Ar or a mixture of N 2 / H 2 or Ar / H 2 ) at temperatures between 800 ° C and 1400 ° C.
- the synthesis is carried out in a suitable furnace, such as a tube or chamber furnace.
- Batch mixture 5 69, 9 g SrC0 3 , 93.3 g BaC0 3 , 29.3 g Si0 2 , 0.1 g Si 3 N 4 , 0.4 g Gd 2 0 3 and 7.0 g Eu 2 Ü 3
- Batch mixture 8 69, 9 g SrC0 3 , 93, 3 g BaC0 3 , 29.3 g Si0 2 , 0.1 g Si 3 N 4 , 0.5 g H0 2 O 3 and 7.0 g EU 2 O 3
- Batch mixture 13 69, 9 g SrC0 3 , 93, 3 g BaC0 3 , 29.3 g Si0 2 , 0.1 g Si 3 N 4 , 0.4 g Y 2 0 3 and 7.0 g Eu 2 0 3
- Batch mixture 14 69, 9 g SrC0 3 , 93, 3 g BaC0 3 , 29.3 g Si0 2 , 0.1 g Si 3 N 4 , 0.4 g Y 2 0 3 and 7.0 g Eu 2 0 3
- Batch mixture 14 69, 9 g SrC0 3 , 93, 3 g BaC0 3 , 29.3 g Si0 2 , 0.1 g Si 3 N 4 , 0.4 g Y 2 0 3 and 7.0 g Eu 2 0 3
- Batch mixture 14 69, 9 g SrC0 3 , 93, 3 g BaC0 3 , 29.3 g Si0 2 , 0.1 g Si 3
- Table 1 shows a comparison of the spectral properties using the example of a La / N doping with and without Si0 2 subcutaneous.
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- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Luminescent Compositions (AREA)
- Electroluminescent Light Sources (AREA)
- Led Device Packages (AREA)
Abstract
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EP11727415.9A EP2585554B9 (de) | 2010-06-24 | 2011-06-07 | Leuchtstoff und lichtquelle mit derartigem leuchtstoff |
CN201180031311.9A CN103097491B (zh) | 2010-06-24 | 2011-06-07 | 荧光材料和具有这种荧光材料的光源 |
JP2013515808A JP2013536264A (ja) | 2010-06-24 | 2011-06-07 | 蛍光体及び係る蛍光体を有する光源 |
US13/805,754 US20130140981A1 (en) | 2010-06-24 | 2011-06-07 | Luminescent substance and light source having such a luminescent substance |
KR1020137001803A KR20130038340A (ko) | 2010-06-24 | 2011-06-07 | 발광 물질 및 이러한 발광 물질을 갖는 광원 |
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DE102010030473A DE102010030473A1 (de) | 2010-06-24 | 2010-06-24 | Leuchtstoff und Lichtquelle mit derartigem Leuchtstoff |
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EP (1) | EP2585554B9 (de) |
JP (1) | JP2013536264A (de) |
KR (1) | KR20130038340A (de) |
CN (1) | CN103097491B (de) |
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Cited By (4)
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WO2013041377A1 (de) * | 2011-09-23 | 2013-03-28 | Osram Ag | Lichtquelle mit leuchtstoff und zugehörige beleuchtungseinheit |
WO2015052238A1 (de) | 2013-10-08 | 2015-04-16 | Osram Opto Semiconductors Gmbh | Leuchtstoff, verfahren zum herstellen eines leuchtstoffs und verwendung eines leuchtstoffs |
JP2016516860A (ja) * | 2013-04-19 | 2016-06-09 | 四川新力光源股▲ふん▼有限公司 | 酸窒化物の発光材、製造方法及びそれから製造されたled光源 |
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EP3172168A1 (de) | 2014-07-23 | 2017-05-31 | Solvay SA | Verfahren zur herstellung von gereinigtem erdalkalimetallcarbonat |
DE102016121694A1 (de) * | 2016-08-12 | 2018-02-15 | Osram Gmbh | Beleuchtungsvorrichtung |
DE102016121692A1 (de) | 2016-08-12 | 2018-02-15 | Osram Gmbh | Leuchtstoff und Verfahren zur Herstellung eines Leuchtstoffs |
CN109642155B (zh) | 2016-08-12 | 2023-04-07 | 欧司朗光电半导体有限公司 | 照明设备 |
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WO2013041377A1 (de) * | 2011-09-23 | 2013-03-28 | Osram Ag | Lichtquelle mit leuchtstoff und zugehörige beleuchtungseinheit |
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JP2016516860A (ja) * | 2013-04-19 | 2016-06-09 | 四川新力光源股▲ふん▼有限公司 | 酸窒化物の発光材、製造方法及びそれから製造されたled光源 |
WO2015052238A1 (de) | 2013-10-08 | 2015-04-16 | Osram Opto Semiconductors Gmbh | Leuchtstoff, verfahren zum herstellen eines leuchtstoffs und verwendung eines leuchtstoffs |
US11292965B2 (en) | 2013-10-08 | 2022-04-05 | Osram Opto Semiconductors Gmbh | Phosphor, method for producing a phosphor and use of a phosphor |
DE102016109138A1 (de) | 2016-05-18 | 2017-11-23 | Osram Gmbh | Optoelektronisches Bauelement und Verwendung eines optoelektronischen Bauelements |
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Publication number | Publication date |
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EP2585554A1 (de) | 2013-05-01 |
CN103097491A (zh) | 2013-05-08 |
EP2585554B1 (de) | 2016-08-31 |
US20130140981A1 (en) | 2013-06-06 |
EP2585554B9 (de) | 2017-01-25 |
CN103097491B (zh) | 2014-12-10 |
JP2013536264A (ja) | 2013-09-19 |
DE102010030473A1 (de) | 2011-12-29 |
KR20130038340A (ko) | 2013-04-17 |
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