WO2011158636A1 - Substrat composite - Google Patents

Substrat composite Download PDF

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Publication number
WO2011158636A1
WO2011158636A1 PCT/JP2011/062246 JP2011062246W WO2011158636A1 WO 2011158636 A1 WO2011158636 A1 WO 2011158636A1 JP 2011062246 W JP2011062246 W JP 2011062246W WO 2011158636 A1 WO2011158636 A1 WO 2011158636A1
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WO
WIPO (PCT)
Prior art keywords
substrate
piezoelectric substrate
composite
support substrate
piezoelectric
Prior art date
Application number
PCT/JP2011/062246
Other languages
English (en)
Japanese (ja)
Inventor
健司 鈴木
Original Assignee
日本碍子株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本碍子株式会社 filed Critical 日本碍子株式会社
Priority to CN201190000572XU priority Critical patent/CN203014754U/zh
Priority to JP2013600008U priority patent/JP3184763U/ja
Publication of WO2011158636A1 publication Critical patent/WO2011158636A1/fr

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • H10N30/073—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies by fusion of metals or by adhesives

Definitions

  • the present invention relates to a composite substrate.
  • elasticity such as surface acoustic wave devices that can function as filter elements and oscillators used in mobile phones and the like, Lamb wave elements using piezoelectric thin films, and thin film resonators (FBAR: Film Bulk Acoustic Resonator) Wave devices are known.
  • FBAR Film Bulk Acoustic Resonator
  • a device in which a supporting substrate and a piezoelectric substrate that propagates an acoustic wave are bonded together and a comb-shaped electrode capable of exciting a surface acoustic wave is provided on the surface of the piezoelectric substrate is known.
  • a substrate obtained by bonding a support substrate and a piezoelectric substrate is referred to as a composite substrate.
  • a sapphire substrate is often used.
  • Patent Document 1 it has been difficult to form a piezoelectric substrate using an adhesive on the main surface of the spinel substrate. For this reason, in Patent Document 1, the spinel substrate and the piezoelectric substrate are directly joined using van der Waals force without using an adhesive.
  • the present invention has been made to solve such problems, and has as its main object to provide a composite substrate in which a piezoelectric substrate and a support substrate made of spinel are firmly bonded via an organic adhesive layer. .
  • the composite substrate of the present invention employs the following means in order to achieve the main object described above.
  • the composite substrate of the present invention is A piezoelectric substrate; A support substrate made of spinel; An organic adhesive layer for bonding the piezoelectric substrate and the support substrate; With Of the support substrate, the bonding surface with the piezoelectric substrate has Rt (maximum cross-sectional height of the roughness curve) of 5 nm to 50 nm.
  • the piezoelectric substrate and the support substrate made of spinel are firmly bonded through the organic adhesive layer. Moreover, since the organic adhesive layer is present compared to the case where the piezoelectric substrate and the support substrate are directly bonded, an effect of preventing cracking due to stress relaxation can be obtained.
  • FIG. 1 is a perspective view of a composite substrate 10.
  • FIG. FIG. 2 is a cross-sectional view taken along line AA in FIG. 1.
  • the piezoelectric substrate is, for example, one selected from the group consisting of lithium tantalate, lithium niobate, lithium niobate-lithium tantalate solid solution, lithium borate, langasite, and quartz. It is good also as a board
  • the size of the piezoelectric substrate is not particularly limited. For example, the diameter may be 50 to 150 mm and the thickness may be 10 to 500 ⁇ m.
  • the organic adhesive layer may be, for example, an acrylic adhesive layer or an epoxy adhesive.
  • the thickness of the organic adhesive layer is not particularly limited, but for example, 0.1 to 1.0 ⁇ m is preferable because good frequency temperature characteristics can be obtained.
  • the support substrate is a substrate made of spinel.
  • Rt of the bonding surface of the support substrate with the piezoelectric substrate is 5 nm or more and 50 nm or less. If the Rt of the adhesion surface is less than 5 nm, the piezoelectric substrate and the support substrate may be peeled off when the composite substrate is processed at a high temperature, which is not preferable. If it exceeds 50 ⁇ m, the piezoelectric substrate is not processed when the composite substrate is processed at a high temperature. This is not preferable because the substrate may burst.
  • the spinel is preferably a polycrystalline spinel that is an oxide of magnesium and aluminum.
  • the size of the support substrate is not particularly limited, and for example, the diameter may be 50 to 150 mm and the thickness may be 100 to 500 ⁇ m.
  • the surface of the support substrate is polished so that Rt is 5 nm to 50 nm.
  • the bonding surface of the piezoelectric substrate and the support substrate is washed, and impurities (oxide, adsorbed material, etc.) adhering to the bonding surface are removed.
  • an organic adhesive is uniformly applied to at least one of the joint surfaces of both substrates.
  • the coating method include spin coating.
  • the two substrates are bonded together, and when the organic adhesive is a thermosetting resin, it is cured by heating, and when the organic adhesive is a photocurable resin, it is cured by irradiation with light.
  • the organic adhesive layer has a thickness of 0.1 to 1.0 ⁇ m. In this way, the composite substrate of the present invention can be obtained.
  • the composite substrate of the present invention is used for an acoustic wave device.
  • a surface acoustic wave device As an acoustic wave device, a surface acoustic wave device, a Lamb wave element, a thin film resonator (FBAR), and the like are known.
  • a surface acoustic wave device includes an input-side IDT (Interdigital-Transducer) electrode (also referred to as a comb-shaped electrode or an interdigital electrode) that excites surface acoustic waves on the surface of a piezoelectric substrate and an output-side IDT that receives surface acoustic waves. And an electrode.
  • IDT Interdigital-Transducer
  • an electric field is generated between the electrodes, and a surface acoustic wave is excited and propagates on the piezoelectric substrate. Then, the propagated surface acoustic wave can be taken out as an electric signal from the IDT electrode on the output side provided in the propagation direction.
  • Such an acoustic wave device employs a reflow process when mounted on a printed wiring board, for example. In this reflow process, when lead-free solder is used, the acoustic wave device is heated to about 260 ° C. However, since the acoustic wave device using the composite substrate of the present invention is excellent in heat resistance, the piezoelectric substrate and the support substrate Generation of cracks is suppressed.
  • the piezoelectric substrate may have a metal film on the back surface.
  • the metal film plays a role of increasing the electromechanical coupling coefficient in the vicinity of the back surface of the piezoelectric substrate when a Lamb wave element is manufactured as an elastic wave device.
  • the Lamb wave element has a structure in which comb electrodes are formed on the surface of the piezoelectric substrate, and the metal film of the piezoelectric substrate is exposed by the cavity provided in the support substrate. Examples of the material of such a metal film include aluminum, an aluminum alloy, copper, and gold.
  • a composite substrate including a piezoelectric substrate that does not have a metal film on the back surface may be used.
  • the piezoelectric substrate may have a metal film and an insulating film on the back surface.
  • the metal film serves as an electrode when a thin film resonator is manufactured as an acoustic wave device.
  • the thin film resonator has a structure in which electrodes are formed on the front and back surfaces of the piezoelectric substrate, and the metal film of the piezoelectric substrate is exposed by using the insulating film as a cavity.
  • the material for such a metal film include molybdenum, ruthenium, tungsten, chromium, and aluminum.
  • the material for the insulating film include silicon dioxide, zinc oxide, phosphorous silica glass, and boron phosphorous silica glass.
  • Example 1 1 is a perspective view of the composite substrate 10, and FIG. 2 is a cross-sectional view taken along the line AA of FIG.
  • the composite substrate 10 is used for a surface acoustic wave device, and is formed in a circular shape with one portion being flat. This flat portion is a portion called an orientation flat (OF), and is used for detection of a wafer position and direction when various operations are performed in the manufacturing process of the surface acoustic wave device.
  • the composite substrate 10 includes a piezoelectric substrate 12 made of lithium tantalate (LT) capable of propagating elastic waves, and a support substrate 14 made of spinel (cubic polycrystalline spinel, MgAl 2 O 4 ) bonded to the piezoelectric substrate 12.
  • LT lithium tantalate
  • MgAl 2 O 4 cylindrical polycrystalline spinel
  • the piezoelectric substrate 12 has a thickness of 20 ⁇ m and a diameter of 4 inches (about 100 mm).
  • the piezoelectric substrate 12 is a 42 ° Y-cut X-propagation LT substrate (42Y-X LT).
  • the support substrate 14 has a thickness of 250 ⁇ m and a diameter of 4 inches.
  • the adhesive layer 16 is a layer in which an acrylic adhesive is solidified and has a thickness of 0.6 ⁇ m.
  • a support substrate made of polycrystalline spinel having a diameter of 4 inches was prepared as a support substrate.
  • a 42 ° Y-cut X-propagation LT substrate having a diameter of 4 inches was prepared as a piezoelectric substrate.
  • the adhesive surface of the piezoelectric substrate with the support substrate was polished and polished so that the surface roughness Rt was 3 nm.
  • the thickness of the piezoelectric substrate after polishing was 250 ⁇ m.
  • the adhesive surface of the support substrate with the piezoelectric substrate was polished and polished with microdiamond so that Rt was 5 nm.
  • the thickness of the support substrate after polishing was 250 ⁇ m.
  • Rt was measured in accordance with JIS B601 (2001), with the measurement range being a region surrounded by a 10 ⁇ m ⁇ 10 ⁇ m square.
  • an acrylic adhesive was applied to one side of each substrate using a spin coater.
  • both substrates were bonded so that the adhesive-coated surfaces of both substrates were facing each other, and held at 280 ° C. for 30 minutes.
  • curing an acrylic adhesive was obtained.
  • the piezoelectric substrate was polished and polished until the thickness became 20 ⁇ m, and 10 composite substrates 10 of Example 1 were obtained.
  • Example 2 Ten composite substrates 10 were obtained in the same manner as in Example 1, except that the adhesive surface of the support substrate with the piezoelectric substrate was polished and polished so that Rt was 45 nm.
  • Example 1 Ten composite substrates 10 were obtained in the same manner as in Example 1, except that the adhesive surface of the support substrate with the piezoelectric substrate was polished and polished so that Rt was 2 nm.
  • Example 2 Ten composite substrates 10 were obtained in the same manner as in Example 1, except that the adhesive surface of the support substrate with the piezoelectric substrate was polished and polished so that Rt was 60 nm.
  • the air was expanded by the high temperature treatment, and the piezoelectric substrate was ruptured. Since the arithmetic average roughness Ra is an average value, it does not serve as an index as to whether or not a minute hole having a deep depth exists. For example, even if Ra is 40 nm, deep microholes with a depth exceeding 50 nm may exist.
  • the composite substrate of the present invention can be used for an elastic wave device such as a surface acoustic wave device, a Lamb wave element, and a thin film resonator (FBAR).
  • an elastic wave device such as a surface acoustic wave device, a Lamb wave element, and a thin film resonator (FBAR).
  • FBAR thin film resonator

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

L'invention concerne un substrat composite comportant un substrat piézoélectrique, un substrat de support constitué de spinelle, et une couche adhésive organique servant à coller le substrat piézoélectrique et le substrat de support, le substrat de support comprenant une surface adhésive à coller au substrat piézoélectrique et la Rt (hauteur de section transversale maximale d'une courbe de rugosité) de la surface adhésive étant comprise entre 5 nm et 50 nm.
PCT/JP2011/062246 2010-06-15 2011-05-27 Substrat composite WO2011158636A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201190000572XU CN203014754U (zh) 2010-06-15 2011-05-27 复合基板
JP2013600008U JP3184763U (ja) 2010-06-15 2011-05-27 複合基板

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US35483710P 2010-06-15 2010-06-15
US61/354,837 2010-06-15

Publications (1)

Publication Number Publication Date
WO2011158636A1 true WO2011158636A1 (fr) 2011-12-22

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ID=45348045

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2011/062246 WO2011158636A1 (fr) 2010-06-15 2011-05-27 Substrat composite

Country Status (3)

Country Link
JP (1) JP3184763U (fr)
CN (1) CN203014754U (fr)
WO (1) WO2011158636A1 (fr)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10284169B2 (en) 2017-03-31 2019-05-07 Ngk Insulators, Ltd. Bonded bodies and acoustic wave devices
US10432169B2 (en) 2016-03-25 2019-10-01 Ngk Insulators, Ltd. Bonded body and elastic wave element
EP3102405B1 (fr) * 2014-02-07 2020-11-18 CeramTec-Etec GmbH Stratifié substrat-céramique
US10964882B2 (en) 2016-03-25 2021-03-30 Ngk Insulators, Ltd. Bonding method
WO2022259591A1 (fr) * 2021-06-09 2022-12-15 日本碍子株式会社 Substrat composite et procédé de fabrication de ce substrat composite
JPWO2022259591A1 (fr) * 2021-06-09 2022-12-15

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014010696A1 (fr) * 2012-07-12 2014-01-16 日本碍子株式会社 Substrat composite, dispositif piézoélectrique et procédé de fabrication de substrat composite
JP6481465B2 (ja) * 2014-08-21 2019-03-13 三星ダイヤモンド工業株式会社 複合基板のブレイク方法
TWI787475B (zh) 2018-03-29 2022-12-21 日商日本碍子股份有限公司 接合體及彈性波元件
TWI791099B (zh) 2018-03-29 2023-02-01 日商日本碍子股份有限公司 接合體及彈性波元件
KR102287003B1 (ko) 2018-06-22 2021-08-09 엔지케이 인슐레이터 엘티디 접합체 및 탄성파 소자
CN109672420B (zh) * 2018-12-18 2023-03-31 北方民族大学 设置镁铝合金膜的多层压电基片及其制备方法
CN113690365B (zh) * 2021-07-23 2024-02-13 绍兴中芯集成电路制造股份有限公司 压电器件及其制作方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003152236A (ja) * 1994-06-03 2003-05-23 Ngk Insulators Ltd セラミックダイヤフラム構造体及びその製造方法
JP2006043778A (ja) * 2003-07-22 2006-02-16 Ngk Insulators Ltd アクチュエータ装置
JP2007134889A (ja) * 2005-11-09 2007-05-31 Shin Etsu Chem Co Ltd 複合圧電基板
WO2009072585A1 (fr) * 2007-12-05 2009-06-11 Asahi Glass Co., Ltd. Procédé de fabrication de film kln cristallin, procédé de fabrication d'un dispositif à semi-conducteur et dispositif à semi-conducteur
JP2009278610A (ja) * 2008-04-15 2009-11-26 Ngk Insulators Ltd 弾性表面波素子

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003152236A (ja) * 1994-06-03 2003-05-23 Ngk Insulators Ltd セラミックダイヤフラム構造体及びその製造方法
JP2006043778A (ja) * 2003-07-22 2006-02-16 Ngk Insulators Ltd アクチュエータ装置
JP2007134889A (ja) * 2005-11-09 2007-05-31 Shin Etsu Chem Co Ltd 複合圧電基板
WO2009072585A1 (fr) * 2007-12-05 2009-06-11 Asahi Glass Co., Ltd. Procédé de fabrication de film kln cristallin, procédé de fabrication d'un dispositif à semi-conducteur et dispositif à semi-conducteur
JP2009278610A (ja) * 2008-04-15 2009-11-26 Ngk Insulators Ltd 弾性表面波素子

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3102405B1 (fr) * 2014-02-07 2020-11-18 CeramTec-Etec GmbH Stratifié substrat-céramique
US10432169B2 (en) 2016-03-25 2019-10-01 Ngk Insulators, Ltd. Bonded body and elastic wave element
US10720566B2 (en) 2016-03-25 2020-07-21 Ngk Insulators, Ltd. Bonding method
US10964882B2 (en) 2016-03-25 2021-03-30 Ngk Insulators, Ltd. Bonding method
US10284169B2 (en) 2017-03-31 2019-05-07 Ngk Insulators, Ltd. Bonded bodies and acoustic wave devices
WO2022259591A1 (fr) * 2021-06-09 2022-12-15 日本碍子株式会社 Substrat composite et procédé de fabrication de ce substrat composite
JPWO2022259591A1 (fr) * 2021-06-09 2022-12-15
JP7455205B2 (ja) 2021-06-09 2024-03-25 日本碍子株式会社 複合基板および複合基板の製造方法

Also Published As

Publication number Publication date
JP3184763U (ja) 2013-07-18
CN203014754U (zh) 2013-06-19

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