JP2009278610A - 弾性表面波素子 - Google Patents
弾性表面波素子 Download PDFInfo
- Publication number
- JP2009278610A JP2009278610A JP2009040947A JP2009040947A JP2009278610A JP 2009278610 A JP2009278610 A JP 2009278610A JP 2009040947 A JP2009040947 A JP 2009040947A JP 2009040947 A JP2009040947 A JP 2009040947A JP 2009278610 A JP2009278610 A JP 2009278610A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- acoustic wave
- surface acoustic
- propagation
- support substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 92
- 239000012790 adhesive layer Substances 0.000 claims abstract description 19
- 239000013078 crystal Substances 0.000 claims abstract description 16
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 6
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052744 lithium Inorganic materials 0.000 claims description 3
- 239000006104 solid solution Substances 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 239000005388 borosilicate glass Substances 0.000 claims description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 239000000853 adhesive Substances 0.000 description 13
- 230000001070 adhesive effect Effects 0.000 description 13
- 239000010408 film Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- AWJDQCINSGRBDJ-UHFFFAOYSA-N [Li].[Ta] Chemical compound [Li].[Ta] AWJDQCINSGRBDJ-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 230000010356 wave oscillation Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
- H03H3/10—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
【解決手段】弾性表面波素子は、支持基板1、圧電単結晶基板3A、支持基板1と圧電単結晶からなる伝搬基板3とを接着する厚さ0.1μm〜1.0μmの有機接着剤層2、および伝搬基板3A上に設けられた弾性表面波フィルタを備える。
【選択図】 図1
Description
支持基板、
圧電単結晶からなる伝搬基板、
支持基板と伝搬基板とを接着する厚さ0.1μm〜1.0μmの有機接着剤層、および
伝搬基板上に設けられた弾性表面波フィルタまたはレゾネ―ターを備えることを特徴とする、弾性表面波素子に係るものである。
図1(a)に示すように、支持基板1を準備する。図1(b)に示すように、支持基板1の表面に有機接着剤2を塗布し、図1(c)に示すように、圧電単結晶からなる基板3を接着する。次いで、図1(d)に示すように、基板3を加工して薄板化し、厚さT2の伝搬基板3Aを得る。
図1に示す製法に従い、図2に示すような弾性表面波素子6を作製した。
ただし、基板3には、SAWの伝播方向をXとし、切り出し角が回転Yカット板である36°YカットX伝搬タンタル酸リチウム基板を使用した。SAWの伝搬方向Xの線膨張係数が16ppm/℃である。支持基板1には単結晶シリコン基板を使用した。支持基板1のSAWの伝搬方向Xの線膨張係数が3ppm/℃である。支持基板1の厚さT1を350μmとし、圧電単結晶基板3の厚さを350μmとし、有機接着剤(アクリル系)を用いて180°Cで基板同士を接着した。次いで研削加工によって圧電単結晶基板3の厚さを30μmにまで小さくした。得られた伝搬基板3A上に金属アルミニウム製の入力電極4および出力電極5を形成した。
次に、図3に示す弾性表面波素子を実施例1と同様の方法で作製した。得られた素子について、実施例1と同様の実験を行ったところ、やはり有機接着剤層の厚さを0.1〜1.0μmとすることで、周波数温度特性(Temperature Coefficient of Frequency)が臨界的に著しく向上することを確認した。
Claims (4)
- 支持基板、
圧電単結晶からなる伝搬基板、
前記支持基板と前記伝搬基板とを接着する厚さ0.1μm〜1.0μmの有機接着剤層、および
前記伝搬基板上に設けられた弾性表面波フィルタまたはレゾネ―ターを備えることを特徴とする、弾性表面波素子。 - 前記圧電単結晶が、ニオブ酸リチウム、タンタル酸リチウムおよびニオブ酸リチウム−タンタル酸リチウム固溶体単結晶からなる群より選ばれることを特徴とする、請求項1記載の素子。
- 前記支持基板が、シリコン、サファイア、窒化アルミニウム、アルミナ、ホウ珪酸ガラスおよび石英ガラスからなる群より選ばれた材料からなることを特徴とする、請求項1または2記載の素子。
- 前記支持基板の表面に酸化膜が形成されていないことを特徴とする、請求項1〜3のいずれか一つの請求項に記載の素子。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009040947A JP4956569B2 (ja) | 2008-04-15 | 2009-02-24 | 弾性表面波素子 |
DE102009001192.7A DE102009001192B4 (de) | 2008-04-15 | 2009-02-26 | Akustische Oberflächenwelleneinrichtungen |
US12/614,597 US8115365B2 (en) | 2008-04-15 | 2009-11-09 | Surface acoustic wave devices |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008105407 | 2008-04-15 | ||
JP2008105407 | 2008-04-15 | ||
JP2009040947A JP4956569B2 (ja) | 2008-04-15 | 2009-02-24 | 弾性表面波素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009278610A true JP2009278610A (ja) | 2009-11-26 |
JP4956569B2 JP4956569B2 (ja) | 2012-06-20 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009040947A Active JP4956569B2 (ja) | 2008-04-15 | 2009-02-24 | 弾性表面波素子 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP4956569B2 (ja) |
DE (1) | DE102009001192B4 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011158636A1 (ja) * | 2010-06-15 | 2011-12-22 | 日本碍子株式会社 | 複合基板 |
US8115365B2 (en) | 2008-04-15 | 2012-02-14 | Ngk Insulators, Ltd. | Surface acoustic wave devices |
JP2015159499A (ja) * | 2014-02-25 | 2015-09-03 | 日本碍子株式会社 | 複合基板の製法及び複合基板 |
US9438201B2 (en) | 2013-03-21 | 2016-09-06 | Ngk Insulators, Ltd. | Composite substrates for acoustic wave elements, and acoustic wave elements |
KR20190132535A (ko) * | 2017-05-02 | 2019-11-27 | 엔지케이 인슐레이터 엘티디 | 탄성파 소자 및 그 제조 방법 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102624352B (zh) * | 2010-10-06 | 2015-12-09 | 日本碍子株式会社 | 复合基板的制造方法以及复合基板 |
FR3033462B1 (fr) * | 2015-03-04 | 2018-03-30 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif a ondes elastiques de surface comprenant un film piezoelectrique monocristallin et un substrat cristallin, a faibles coefficients viscoelastiques |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3435789B2 (ja) | 1993-03-15 | 2003-08-11 | 松下電器産業株式会社 | 表面弾性波素子 |
JP3880150B2 (ja) * | 1997-06-02 | 2007-02-14 | 松下電器産業株式会社 | 弾性表面波素子 |
JP2001053579A (ja) | 1999-06-02 | 2001-02-23 | Matsushita Electric Ind Co Ltd | 弾性表面波素子と移動体通信機器 |
US7105980B2 (en) | 2002-07-03 | 2006-09-12 | Sawtek, Inc. | Saw filter device and method employing normal temperature bonding for producing desirable filter production and performance characteristics |
JP3774782B2 (ja) | 2003-05-14 | 2006-05-17 | 富士通メディアデバイス株式会社 | 弾性表面波素子の製造方法 |
JP2005229455A (ja) | 2004-02-16 | 2005-08-25 | Shin Etsu Chem Co Ltd | 複合圧電基板 |
JP4587732B2 (ja) | 2004-07-28 | 2010-11-24 | 京セラ株式会社 | 弾性表面波装置 |
JP4686342B2 (ja) * | 2005-11-30 | 2011-05-25 | 株式会社日立メディアエレクトロニクス | 弾性表面波装置及びこれを搭載した通信端末。 |
JP4804169B2 (ja) * | 2006-02-24 | 2011-11-02 | 日本碍子株式会社 | 圧電薄膜デバイス |
-
2009
- 2009-02-24 JP JP2009040947A patent/JP4956569B2/ja active Active
- 2009-02-26 DE DE102009001192.7A patent/DE102009001192B4/de active Active
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8115365B2 (en) | 2008-04-15 | 2012-02-14 | Ngk Insulators, Ltd. | Surface acoustic wave devices |
WO2011158636A1 (ja) * | 2010-06-15 | 2011-12-22 | 日本碍子株式会社 | 複合基板 |
US9438201B2 (en) | 2013-03-21 | 2016-09-06 | Ngk Insulators, Ltd. | Composite substrates for acoustic wave elements, and acoustic wave elements |
DE112014001537B4 (de) | 2013-03-21 | 2018-06-28 | Ngk Insulators, Ltd. | Verbundsubstrate für Akustikwellenelemente und Akustikwellenelemente |
JP2015159499A (ja) * | 2014-02-25 | 2015-09-03 | 日本碍子株式会社 | 複合基板の製法及び複合基板 |
KR20190132535A (ko) * | 2017-05-02 | 2019-11-27 | 엔지케이 인슐레이터 엘티디 | 탄성파 소자 및 그 제조 방법 |
KR102123350B1 (ko) | 2017-05-02 | 2020-06-16 | 엔지케이 인슐레이터 엘티디 | 탄성파 소자 및 그 제조 방법 |
Also Published As
Publication number | Publication date |
---|---|
DE102009001192A1 (de) | 2009-10-29 |
DE102009001192B4 (de) | 2017-05-24 |
JP4956569B2 (ja) | 2012-06-20 |
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