WO2011152210A1 - 表示装置 - Google Patents
表示装置 Download PDFInfo
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- WO2011152210A1 WO2011152210A1 PCT/JP2011/061384 JP2011061384W WO2011152210A1 WO 2011152210 A1 WO2011152210 A1 WO 2011152210A1 JP 2011061384 W JP2011061384 W JP 2011061384W WO 2011152210 A1 WO2011152210 A1 WO 2011152210A1
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- WIPO (PCT)
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- ion sensor
- display device
- ion
- tft
- antenna
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4141—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for gases
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- the present invention relates to a display device. In more detail, it is related with the display apparatus provided with the ion sensor part.
- an ion generating element capable of easily quantifying ions
- a remote controller for home appliances with a built-in ion sensor, and the like are disclosed. More specifically, an ion generating element including an ion sensor unit that quantifies positive ions and negative ions generated from the ion generating unit and a display unit that displays the quantified amount of ions is known (for example, (See Patent Document 1).
- a remote controller for home appliances with built-in ion sensors which includes an ion sensor that measures the ion concentration in the atmosphere and a display unit that displays the current state of the home appliance (for example, a patent) Reference 2).
- the ion sensor unit 125 and the display unit 135 are separately formed as shown in FIG. That is, the ion sensor unit 125 and the display unit 135 are formed by different processes using different materials. Therefore, there is room for improvement in that it is difficult to reduce the size and the manufacturing cost is increased.
- the ion sensor unit 125 and the display unit 135 are separately formed.
- the ion sensor When the present inventors investigated the size of the ion sensor provided in the conventional ion generator, the ion sensor has several capacitors, several resistors, one operational amplifier, one connector, an antenna pad, It consists of a printed circuit board (PWB) or the like, and the occupied area of the ion sensor is about 15 mm ⁇ 45 mm, of which the occupied area of the antenna pad is about 10 mm ⁇ 10 mm.
- the conventional ion sensor unit is relatively large in the order of millimeters.
- the present invention has been made in view of the above situation, and an object of the present invention is to provide a display device including an ion sensor unit and a display unit, which can be reduced in size and is inexpensive. .
- the inventors of the present invention have variously studied an inexpensive device that includes an ion sensor unit and a display unit, and is configured to include at least one substrate such as a liquid crystal display device. We focused on using display devices. In addition, it has been found that the ion sensor and the display unit are separately formed so that the cost is high, and at least a part of the ion sensor circuit included in the ion sensor unit and the display unit are included. By providing at least a part of the display unit driving circuit to be provided on the same main surface of the substrate, the ion sensor circuit can be provided in an empty space such as a frame region of the substrate, and the display unit driving circuit is formed. The inventors have found that an ion sensor circuit can be formed by using a process, and have conceived that the above-mentioned problems can be solved brilliantly, and have reached the present invention.
- one aspect of the present invention is a display device including an ion sensor unit including an ion sensor circuit and a display unit including a display unit driving circuit, the display device including a substrate, and the ion sensor At least a part of the circuit and at least a part of the display unit driving circuit are display devices formed on the same main surface of the substrate.
- the display device will be described in detail.
- a flat panel display (FPD) is mentioned suitably.
- the FPD include a liquid crystal display device, an organic EL (Organic Electro-Luminescence) display, a plasma display, and the like.
- the ion sensor unit includes an element for measuring an ion concentration in the air, and includes, for example, a fan and an introduction path for introducing ions into the ion sensor circuit in addition to the ion sensor circuit. .
- the ion sensor circuit includes elements (preferably a field effect transistor (hereinafter also referred to as “FET”) and an ion sensor antenna) necessary for converting the ion concentration in the air into an electrical physical quantity. Including at least a function of detecting (collecting) ions. More specifically, it is preferable that the ion sensor unit includes an ion sensor element, and at least a part of the ion sensor circuit is the ion sensor element.
- the ion sensor element is a minimum necessary element for converting the ion concentration in the air into an electrical physical quantity.
- the display unit includes an element for exhibiting a display function, and includes, for example, a display element, an optical film, and the like in addition to the display unit driving circuit.
- the display unit driving circuit is a circuit for driving a display element, and includes circuits such as a TFT array, a gate driver, and a source driver. Particularly, at least a part of the display unit driving circuit is preferably a TFT array.
- a display element is an element having a light emitting function or a dimming function (light shutter function), and is provided for each pixel or sub-pixel of the display device.
- a liquid crystal display device generally includes a pair of substrates facing each other and a display element having a dimming function between both substrates. More specifically, a display element of a liquid crystal display device usually includes a pair of electrodes and a liquid crystal sandwiched between both substrates.
- An organic EL display usually includes a display element having a light emitting function on a substrate. More specifically, the display element of an organic EL display usually includes a structure in which an anode, an organic light emitting layer, and a cathode are laminated.
- a plasma display usually includes a pair of substrates facing each other and a display element having a light emitting function between both the substrates. More specifically, a light-emitting element of a plasma display usually includes a pair of electrodes, a phosphor formed on one substrate, and a rare gas sealed between the two substrates.
- the configuration of the display device is not particularly limited by other components as long as such components are essential. A preferred embodiment of the display device will be described in detail below.
- the ion sensor circuit includes a first field effect transistor (first FET) and an ion sensor antenna, the ion sensor antenna is connected to a gate electrode of the first FET, and the display unit driving circuit includes a second electric field It is preferable that the first FET, the ion sensor antenna, and the second FET are formed on the same main surface of the substrate, including an effect transistor (second FET).
- first FET field effect transistor
- second FET effect transistor
- the ion sensor antenna is a conductive member that senses (collects) ions in the air. Therefore, when ions arrive at the ion sensor antenna, the surface of the ion sensor antenna is charged by the ions, and the potential of the gate electrode of the first FET connected to the ion sensor antenna changes, and as a result, the first FET The electrical resistance of the channel changes.
- the parallel plate type electrode for the ion sensor part was common.
- the ion sensor part of patent document 1 is provided with the flat plate type acceleration electrode and collection electrode which oppose.
- Such a parallel plate type ion sensor unit is difficult to process in the order of ⁇ m because of the limit of processing accuracy in manufacturing, and thus it is difficult to reduce the size.
- a parallel plate electrode composed of a pair of ion acceleration electrode and ion collection electrode is used for the ion sensor part, which is difficult to downsize. is there.
- the gap between electrodes is generally about 3 to 5 ⁇ m, and electrodes are provided on the TFT array substrate and the counter substrate, respectively. Even if the sensor is formed, it is considered difficult to introduce ions into the gap.
- an ion sensor element using an FET and an antenna as in the above embodiment does not require a counter substrate, so that a display device including an ion sensor can be downsized.
- the type of the first FET and the second FET is not particularly limited, but a thin film transistor (hereinafter also referred to as “TFT”) is preferable.
- TFT is suitably used for an active matrix liquid crystal display device or an organic EL display device.
- the semiconductor material is not particularly limited.
- amorphous silicon a-Si
- polysilicon p-Si
- microcrystalline silicon ⁇ c-Si
- continuous grain boundary crystalline silicon CG-Si
- oxide A semiconductor etc.
- the ion sensor antenna preferably has a surface (exposed portion) including a transparent conductive film.
- the surface of the ion sensor antenna is preferably covered with a transparent conductive film.
- the transparent conductive film is resistant to corrosion, and thus it is possible to prevent the non-exposed portion (for example, a portion including the metal wiring) of the ion sensor antenna from being exposed to the external environment and being corroded.
- the transparent conductive film is a first transparent conductive film
- the display unit has a second transparent conductive film. Since the transparent conductive film has both conductivity and optical transparency, the second transparent conductive film can be suitably used as the transparent electrode of the display unit according to the above embodiment.
- the materials and processes for forming the first transparent conductive film and the second transparent conductive film can be made the same as each other, the first transparent conductive film can be formed at low cost. It becomes.
- the first transparent conductive film and the second transparent conductive film preferably include the same material, and more preferably include only the same material. Thereby, the first transparent conductive film can be formed at a lower cost.
- the material of the first transparent conductive film and the second transparent conductive film is not particularly limited.
- indium tin oxide (ITO), indium zinc oxide (IZO), Zinc oxide (ZnO), fluorine-doped tin oxide (FTO: Fluorine-doped Tin Oxide) and the like are preferably used.
- the first FET preferably includes a semiconductor whose characteristics are changed by light, and the semiconductor is preferably shielded from light by a light shielding film.
- the semiconductor whose characteristics are changed by light include a-Si and ⁇ c-Si. Therefore, in order to use these semiconductors for an ion sensor, it is preferable that the characteristics are not changed by shielding light. Therefore, by shielding a semiconductor whose characteristics are changed by light, the semiconductor whose characteristics are changed by light can be suitably used not only in the display unit but also in the ion sensor unit.
- the light shielding film shields the first FET from light outside the display device (external light) and / or light inside the display device.
- Examples of light inside the display device include reflected light generated inside the display device.
- the display device is a self-luminous type such as an organic EL or a plasma display
- light from a light emitting element included in the display device can be used.
- a liquid crystal display device that is a non-self-luminous type light from a backlight can be used. Reflected light or the like generated inside the display device is about several tens of Lx, and the influence on the first FET is relatively small.
- As external light sunlight, indoor lighting (for example, a fluorescent lamp), etc. are mentioned.
- the light shielding film preferably shields the first FET from at least external light, and more preferably blocks both external light and light inside the display device.
- the light shielding film is a first light shielding film
- the display unit has a second light shielding film.
- a second light shielding film can be provided at the boundary of each pixel or sub-pixel of the display unit for the purpose of suppressing color mixing.
- at least a part of the materials and processes for forming the first light shielding film and the second light shielding film can be made the same, and the first light shielding film can be formed at low cost.
- the first light-shielding film and the second light-shielding film preferably include the same material, and more preferably include only the same material. Thereby, the first light shielding film can be formed at a lower cost.
- the ion sensor antenna preferably does not overlap the channel region of the first FET.
- the ion sensor antenna does not need to be shielded from light because it usually does not include a semiconductor whose characteristics change due to light. That is, even if the first FET needs to be shielded from light, it is not necessary to provide a light shielding film around the ion sensor antenna. Therefore, if the ion sensor antenna is provided outside the channel region as in the above embodiment, the placement location of the ion sensor antenna can be freely determined without being restricted by the placement location of the first FET. Therefore, the ion antenna can be easily formed in a place where ions can be detected more effectively, for example, in a place near the flow path for guiding the atmosphere to the ion sensor antenna or the fan.
- the position where the ion sensor antenna is formed is not particularly limited as long as it does not overlap the channel region of the first FET, but it is preferably formed inside the introduction path for introducing ions. Furthermore, it is more preferable that it is formed outside the channel region of the first FET and at the end of the substrate than the first FET.
- the ion sensor antenna may overlap the channel region of the first FET.
- the ion sensor antenna may overlap the channel region of the first FET.
- the gate electrode of the TFT itself can function as an ion sensor antenna. Therefore, the ion sensor element can be further downsized.
- At least a part of the ion sensor circuit and at least a part of the display unit driving circuit are connected to a common power source.
- the ion sensor unit and the display unit can reduce the cost for forming the power source and the space for arranging the power source than those having separate power sources. Can do. More specifically, it is preferable that at least the source or drain of the first FET and the gate of the TFT of the TFT array are connected to a common power source.
- the first FET preferably includes a-Si or ⁇ c-Si.
- a-Si or ⁇ c-Si By using relatively inexpensive a-Si or ⁇ c-Si, it is possible to provide an ion sensor that can detect both ions with high accuracy while being low in cost.
- a product related to the display device is not particularly limited, and preferably, a stationary display such as a television or a display for a personal computer is used.
- a stationary display such as a television or a display for a personal computer
- the ion concentration in the indoor environment where the stationary display is placed can be displayed on the display.
- mobile devices such as mobile phones and PDAs (Personal Digital Assistants) are also preferable examples. This makes it possible to easily measure the ion concentration at various locations.
- an ion generator provided with a display unit can be cited as a suitable example, whereby the concentration of ions released from the ion generator can be displayed on the display unit.
- FIG. 1 is a block diagram of a display device according to Embodiments 1 and 2.
- FIG. 3 is a schematic cross-sectional view illustrating a cross section of a display device according to Embodiments 1 and 2.
- FIG. 3 is a schematic cross-sectional view illustrating a cross section of a display device according to Embodiments 1 and 2.
- FIG. 4 is an equivalent circuit showing the ion sensor circuit 107 and a part of the TFT array 101 according to the first and second embodiments.
- 3 is a timing chart of the ion sensor circuit according to the first embodiment.
- 6 is a timing chart of the ion sensor circuit according to the second embodiment.
- 4 is a graph showing changes in Id with time in four types of air according to Example 1; 4 is a graph showing changes with time in node-Z potentials in four types of air according to Example 1; It is a schematic diagram which shows the conventional ion generating element. It is a cross-sectional schematic diagram which shows the cross section of the conventional remote controller for household appliances with a built-in ion sensor.
- FIG. 1 is a block diagram of a display device according to the present embodiment.
- the display device 110 is a liquid crystal display device, and includes an ion sensor unit 120 for measuring ion concentration in the air and a display unit 130 for displaying various images.
- the display unit 130 includes a display unit driving TFT array 101, a gate driver (display scanning signal line driving circuit) 103, and a source driver (display video signal line driving circuit) 104 as the display unit driving circuit 115.
- the ion sensor unit 120 includes an ion sensor driving / reading circuit 105, an arithmetic processing LSI 106, and an ion sensor circuit 107.
- the power supply circuit 109 is shared by the ion sensor unit 120 and the display unit 130.
- the display unit 130 has a circuit configuration similar to that of an active matrix display device such as a conventional liquid crystal display device. That is, an image is displayed by line sequential driving in an area where the TFT array 101 is formed, that is, a display area.
- the ion sensor circuit 107 detects (collects) negative ions in the air, and generates a voltage value corresponding to the amount of detected negative ions. This voltage value is sent to the driving / reading circuit 105 where it is converted into a digital signal. This signal is sent to the LSI 106, where the negative ion concentration is calculated based on a predetermined calculation method, and display data for displaying the calculation result in the display area is generated. This display data is transmitted to the TFT array 101 via the source driver 104, and the negative ion concentration corresponding to the display data is finally displayed.
- the power supply circuit 109 supplies power to the TFT array 101, the gate driver 103, the source driver 104, and the drive / read circuit 105.
- the drive / read circuit 105 controls reset wiring and input wiring, which will be described later, and supplies predetermined power to each wiring at a desired timing.
- the driving / reading circuit 105 may be included in other circuits such as the ion sensor circuit 107, the gate driver 103, and the source driver 104, or may be included in the LSI 106.
- the arithmetic processing may be performed using software that functions on a personal computer (PC) instead of the LSI 106.
- PC personal computer
- FIG. 2 is a schematic cross-sectional view of the display device in a state cut along line A1-A2 shown in FIG.
- the ion sensor unit 120 includes an ion sensor circuit 107, an air ion introduction / derivation path 42, a fan (not shown), and a light shielding film 12a (first light shielding film).
- the ion sensor circuit 107 includes a sensor TFT (first FET) 30 and an ion sensor antenna 41 which are ion sensor elements.
- the display unit 130 includes a TFT array 101 including pixel TFTs (second FETs) 40, a light shielding film 12b (second light shielding film), a color filter 13 including colors such as RGB and RGBY, a liquid crystal 32, Polarizing plates 31a and 31b are provided.
- a TFT array 101 including pixel TFTs (second FETs) 40, a light shielding film 12b (second light shielding film), a color filter 13 including colors such as RGB and RGBY, a liquid crystal 32, Polarizing plates 31a and 31b are provided.
- the antenna 41 is a conductive member that detects (collects) negative ions in the air, and is connected to the gate of the sensor TFT 30.
- the antenna 41 includes a portion (exposed portion) exposed to the external environment, and when negative ions adhere to the surface (exposed portion) of the antenna 41, the potential of the antenna 41 changes, and the potential of the gate of the sensor TFT 30 also changes accordingly. Change. As a result, the current and / or voltage between the source and drain of the sensor TFT 30 changes.
- the ion sensor element is formed of the antenna 41 and the sensor TFT 30, and thus can be made smaller than the conventional parallel plate ion sensor.
- the introduction / extraction path 42 is a path for efficiently ventilating the antenna 41, and air flows from the front of FIG. 2 to the back or from the back to the front of FIG. 2 by a fan.
- the display device 110 includes two insulating substrates 1a and 1b, most of which face each other, and a liquid crystal 32 is sandwiched between the substrates 1a and 1b.
- the sensor TFT 30 and the TFT array 101 are provided on the main surface on the liquid crystal side of the substrate 1a (TFT array substrate) at a position where the substrates 1a and 1b face each other.
- a large number of pixel TFTs (second FETs) 40 are arranged in a matrix.
- the antenna 41, the introduction / extraction path 42, and the fan are provided on the main surface of the substrate 1a on the liquid crystal side at a position where the substrates 1a and 1b do not face each other.
- the antenna 41 is provided outside the channel region of the sensor TFT 30.
- the antenna 41 can be easily arranged near the introduction / extraction path 42 and the fan, so that the atmosphere can be efficiently sent to the antenna 41.
- the sensor TFT 30 and the light shielding film 12a are provided at an end portion (frame region) of the display unit 130. This makes it possible to effectively use the space in the frame area, so that the ion sensor circuit 107 can be formed without changing the size of the display device 110.
- the sensor TFT 30 and the ion sensor antenna 41 included in the ion sensor circuit 107 and the TFT array 101 included in the display unit driving circuit 115 are formed on the same main surface of the substrate 1a. Thereby, the sensor TFT 30 and the ion sensor antenna 41 can be formed by using the process of forming the TFT array 101.
- the light shielding films 12a and 12b and the color filter 13 are provided on the liquid crystal side main surface of the substrate 1b (counter substrate) at a position where the substrates 1a and 1b face each other.
- the light shielding film 12 a is provided at a position facing the sensor TFT 30, and the light shielding film 12 b and the color filter 13 are provided at a position facing the TFT array 101.
- the sensor TFT 30 includes a-Si, which is a semiconductor whose characteristics with respect to light change.
- the sensor TFT 30 is shielded from light by the light shielding film 12a, it is possible to suppress the change of the a-Si characteristics, that is, the output characteristics of the sensor TFT 30, so that the ion concentration can be measured with higher accuracy. it can.
- the polarizing plates 31a and 31b are provided on the main surface on the opposite side (outside) of the substrates 1a and 1b from the liquid crystal 32, respectively.
- FIG. 3 is a schematic cross-sectional view of the display device according to the present embodiment.
- a first conductive layer, an insulating film 3, a hydrogenated a-Si layer, an n + a-Si layer, a second conductive layer, a passivation film 9, and a third conductive layer are stacked in this order.
- an ion sensor antenna electrode 2a, a reset wiring 2b, a connection wiring 22, which will be described later, a node-Z storage capacitor electrode 2c, and gate electrodes 2d and 2e are formed. These electrodes are formed on the first conductive layer, and can be formed from the same material and in the same process by, for example, sputtering and photolithography.
- the first conductive layer is formed from a single layer or a stacked metal layer. Specifically, a single layer of aluminum (Al), a lower layer of Al / an upper layer of titanium (Ti), a lower layer of Al / an upper layer of molybdenum (Mo), and the like.
- the reset wiring 2b, the connection wiring 22, and the storage capacitor electrode 2c will be described in detail later with reference to FIG.
- the insulating film 3 is provided on the substrate 1a so as to cover the ion sensor antenna electrode 2a, the reset wiring 2b, the connection wiring 22, the node-Z storage capacitor electrode 2c, and the gate electrodes 2d and 2e.
- the source electrodes 6a and 6b, the drain electrodes 7a and 7b, and the storage capacitor electrode 8 are formed on the second conductive layer, and can be formed from the same material and in the same process by, for example, sputtering and photolithography.
- the second conductive layer is formed from a single layer or a stacked metal layer. Specifically, aluminum (Al) single layer, lower layer Al / upper layer Ti stack, lower layer Ti / upper layer Al stack, and the like.
- the hydrogenated a-Si layers 4a and 4b can be formed from the same material in the same process by, for example, chemical vapor deposition (CVD) and photolithography, and n
- the + a-Si layers 5a and 5b can also be formed from the same material and in the same process by, for example, the CVD method and the photolithography method.
- CVD chemical vapor deposition
- the photolithography method As described above, at the time of forming various electrodes and semiconductors, at least a part of materials and processes can be the same. Thereby, it becomes possible to reduce the cost required for forming the sensor TFT 30 and the pixel TFT 40 composed of various electrodes and semiconductors. The components of the TFTs 30 and 40 will be described in detail later.
- the passivation film 9 is formed on the insulating film 3 so as to cover the hydrogenated a-Si layers 4a and 4b, the n + a-Si layers 5a and 5b, the source electrodes 6a and 6b, the drain electrodes 7a and 7b, and the storage capacitor electrode 8. Is provided.
- a transparent conductive film 11a first transparent conductive film
- a transparent conductive film 11b second transparent conductive film
- the transparent conductive film 11 a is connected to the antenna electrode 2 a through a contact hole 10 a that penetrates the insulating film 3 and the passivation film 9.
- the transparent conductive film 11a is connected to the drain electrode 7b through a contact hole 10b that penetrates the passivation film 9.
- the transparent conductive films 11a and 11b are formed in the third conductive layer, and can be formed from the same material and in the same process by, for example, sputtering and photolithography.
- the third conductive layer is formed of a single layer or a laminated transparent conductive film. Specific examples include an ITO film and an IZO film.
- the transparent conductive film 11a and 11b it is not necessary that all the materials constituting the transparent conductive films 11a and 11b be completely the same, and that all the steps for forming the transparent conductive films 11a and 11b are not necessarily the same.
- the transparent conductive film 11a and / or the transparent conductive film 11b has a multilayer structure, it is also possible to form only the layers common to the two transparent conductive films from the same material by the same process.
- the transparent conductive film 11a can be formed at low cost by diverting at least a part of the material and process for forming the transparent conductive film 11b to the formation of the transparent conductive film 11a.
- the light shielding film 12a and the light shielding film 12b can also be formed from the same material and in the same process.
- the light shielding films 12a and 12b are formed of an opaque metal film such as chromium (Cr), an opaque resin film, or the like.
- the resin film include an acrylic resin containing carbon.
- the sensor TFT 30 is formed of a gate electrode 2d, an insulating film 3, a hydrogenated a-Si layer 4a, an n + a-Si layer 5a, a source electrode 6a, and a drain electrode 7a.
- the pixel TFT 40 includes a gate electrode 2e, an insulating film 3, a hydrogenated a-Si layer 4b, an n + a-Si layer 5b, a source electrode 6b, and a drain electrode 7b.
- the insulating film 3 functions as a gate insulating film in the sensor TFT 30 and the pixel TFT 40.
- the TFTs 30 and 40 are bottom gate type TFTs.
- the n + a-Si layers 5a and 5b are doped with a group V element such as phosphorus (P). That is, the sensor TFT 30 and the pixel TFT 40 are N-channel TFTs.
- the antenna 41 is formed from the transparent conductive film 11a and the antenna electrode 2a.
- a node-Z storage capacitor 43 which is a capacitor, is formed from the node-Z storage capacitor electrodes 2c, 8 and the insulating film 3 functioning as a dielectric.
- FIG. 4 is an equivalent circuit showing the ion sensor circuit 107 and a part of the TFT array 101 according to this embodiment.
- the gate electrode 2d of the pixel TFT 40 is connected to the gate driver 103 via the gate bus lines G n , G n + 1 ,..., And the source electrode 6b is connected to the source bus lines S m , S m + 1 ,. And connected to the source driver 104.
- the drain electrode 7b of the pixel TFT 40 is connected to a transparent conductive film 11b that functions as a pixel electrode.
- the pixel TFT 40 is provided for each sub-pixel and functions as a switching element.
- scanning pulses scanning signals
- the scanning pulses are applied to the pixel TFTs 40 in a line sequential manner.
- An arbitrary video signal generated by the source driver 104 and / or display data calculated based on the negative ion concentration is supplied.
- a video signal and / or display data is supplied at a predetermined timing to the pixel electrode (transparent conductive film 11b) connected to the pixel TFT 40 which has been turned on for a certain period by the input of the scan pulse.
- a video signal and / or display data of a predetermined level written in the liquid crystal is between a pixel electrode to which these signals and / or data are applied and a counter electrode (not shown) facing the pixel electrode. Hold for a certain period.
- a liquid crystal storage capacitor (Cs) 36 is formed in parallel with the liquid crystal capacitor formed between the pixel electrode and the counter electrode. In each subpixel, the liquid crystal storage capacitor 36 is formed between the drain electrode 7a and the liquid crystal storage capacitor lines Cs n , Cs n + 1 ,.
- the capacitance lines Cs n , Cs n + 1 ,... Are formed in the first conductive layer and provided in parallel with the gate wirings G n , G n + 1 ,.
- the input wiring 20 is connected to the drain electrode 7 a of the sensor TFT 30.
- a high voltage (+10 V) or a low voltage (0 V) is applied to the input wiring 20, and the voltage of the input wiring 20 is set to Vdd.
- An output wiring 21 is connected to the source electrode 6a.
- the voltage of the output wiring 21 is Vout.
- the antenna 41 is connected to the gate electrode 2d of the sensor TFT 30 via the connection wiring 22.
- the reset wiring 2 b is connected to the connection wiring 22.
- An intersection (node) between the wirings 22 and 2b is referred to as node-Z.
- the reset wiring 2b is a node-Z, that is, a wiring for resetting the voltage between the gate of the sensor TFT 30 and the antenna 41.
- a high voltage (+ 20V) or a low voltage ( ⁇ 10V) is applied to the reset wiring 2b, and the voltage of the reset wiring 2b is set to Vrst.
- a ground (GND) is connected to the connection wiring 22 via a storage capacitor 43.
- a constant current circuit 25 and an analog-digital conversion circuit (ADC) 26 are connected to the output wiring 21.
- the constant current circuit 25 is composed of an N-channel TFT (constant current TFT), and the drain of the constant current TFT is connected to the output wiring 21.
- the source of the constant current TFT is connected to a constant current source, and the voltage Vss is fixed to a voltage lower than the HighH voltage of Vdd.
- the gate of the constant current TFT is connected to a constant voltage source.
- the voltage Vbais at the gate of the constant current TFT is fixed to a predetermined value so that a constant current (for example, 1 ⁇ A) flows between the source and drain of the constant current TFT.
- the constant current circuit 25 and the ADC 26 are formed in the drive / read circuit 105.
- the antenna 41, the gate of the sensor TFT 30, the reset wiring 2b, the connection wiring 22, and the storage capacitor 43 are integrated with the antenna electrode 2a, the gate electrode 2d, the reset wiring 2b, the storage capacitor electrode 2c, and the connection wiring 22 in the first conductive layer. Are connected to each other.
- the driving / reading circuit 105, the gate driver 103, and the source driver 104 are not formed directly on the substrate 1a, but are formed on a semiconductor chip such as an LSI chip, and the semiconductor chip is mounted on the substrate 1a.
- FIG. 5 is a timing chart of the ion sensor circuit according to the present embodiment.
- Vrst is set to a low voltage ( ⁇ 10 V).
- a power source for setting Vrst to the Low voltage ( ⁇ 10 V) a power source for applying the Low voltage ( ⁇ 10 V) to the gate electrode 2 e of the pixel TFT 40 can be used.
- Vdd is set to a low voltage (0 V).
- a high voltage (+ 20V) is first applied to the reset wiring 2b, and the voltage of the antenna 41 (node-Z voltage) is reset to + 20V.
- a power source for applying Vrst a power source for applying a High voltage (+20 V) to the gate electrode 2e of the pixel TFT 40 can be used.
- the reset wiring 2b is kept in a high impedance state.
- the voltage of the node-Z reset to +20 V, that is, charged positively, is neutralized and decreased by the negative ions ( Sensing operation).
- a high voltage (+10 V) is temporarily applied to the input wiring 20.
- a pulse voltage of +10 V is applied to the input wiring 20.
- the output wiring 21 is connected to the constant current circuit 25. Therefore, when a +10 V pulse voltage is applied to the input wiring 20, a constant current flows through the input wiring 20 and the output wiring 21.
- the voltage Vout of the output wiring 21 changes in accordance with the degree of opening of the gate of the sensor TFT 30, that is, the difference in node-Z voltage. By detecting this voltage Vout with the ADC 26, it is possible to detect the negative ion concentration. It is also possible to detect the negative ion concentration by detecting the current Id of the output wiring 21 that changes depending on the voltage difference of node-Z without providing the constant current circuit 25.
- the high voltage of Vdd is not particularly limited to + 10V, and may be + 20V which is the same as the high voltage applied to the reset wiring 2b, that is, the high voltage applied to the gate electrode 2e of the pixel TFT 40.
- a power source for applying a high voltage to the gate electrode 2e of the pixel TFT 40 can be used as a power source for applying a high voltage of Vdd.
- the display device according to Embodiment 2 has the same configuration as that of Embodiment 1 except for the following points. That is, the display device according to the first embodiment includes an ion sensor that can measure the negative ion concentration in the atmosphere using the N-channel sensor TFT 30, but the display device according to the second embodiment includes a P-channel sensor. An ion sensor that can measure the positive ion concentration in the atmosphere using the TFT 30 is provided.
- n + a-Si layer 5a, p + a-Si layer in place of 5b are formed, the p + a-Si layer, III group element such as boron (B) is doped. That is, in this embodiment, the sensor TFT 30 and the pixel TFT 40 are P-channel TFTs.
- FIG. 6 is a timing chart of the ion sensor circuit according to the present embodiment.
- Vrst is set to a high voltage (+20 V).
- a power source for setting Vrst to the High voltage (+ 20V) a power source for applying the High voltage (+ 20V) to the gate electrode 2e of the pixel TFT 40 can be used.
- Vdd is set to a low voltage (0 V).
- the Low voltage ( ⁇ 20V) is applied to the reset wiring 2b, and the voltage of the antenna 41 (the voltage of node-Z) is reset to ⁇ 20V. After the node-Z voltage is reset, the reset wiring 2b is kept in a high impedance state.
- the voltage Vout of the output wiring 21 changes in accordance with the degree of opening of the gate of the sensor TFT 30, that is, the difference in node-Z voltage.
- the positive ion concentration can be detected by detecting the voltage Vout by the ADC 26. It is also possible to detect the positive ion concentration by detecting the current Id of the output wiring 21 that changes depending on the voltage difference of node-Z without providing the constant current circuit 25.
- the Low voltage applied to the reset wiring 2b is not particularly limited to ⁇ 20V, and may be ⁇ 10V which is the same as the Low voltage applied to the gate electrode 2e of the pixel TFT 40.
- the power supply for applying the Low voltage to the gate electrode 2e of the pixel TFT 40 can be used as the power supply for applying the Low voltage applied to the reset wiring 2b.
- the high voltage of Vdd is not particularly limited to + 10V, and may be + 20V which is the same as the high voltage applied to the reset wiring 2b, that is, the high voltage applied to the gate electrode 2e of the pixel TFT 40.
- a power source for applying a high voltage to the gate electrode 2e of the pixel TFT 40 can be used as a power source for applying a high voltage of Vdd.
- the liquid crystal display device has been described as an example.
- the display device of each embodiment may be an FPD such as an organic EL display or a plasma display.
- the constant current circuit 25 may not be provided. That is, the ion concentration may be calculated by measuring the current between the source and drain of the sensor TFT 30.
- the conductivity type of the TFT formed in the ion sensor unit 120 and the conductivity type of the TFT formed in the display unit 130 may be different from each other.
- a ⁇ c-Si layer, a p-Si layer, a CG-Si layer, or an oxide semiconductor layer may be used instead of the hydrogenated a-Si layer.
- a ⁇ c-Si layer, a p-Si layer, a CG-Si layer, or an oxide semiconductor layer may be used.
- the TFT including the ⁇ c-Si layer is preferably shielded from light.
- p-Si, CG-Si, and oxide semiconductors have low sensitivity to light, a TFT including a p-Si layer or a CG-Si layer may not be shielded from light.
- the semiconductor type included in the TFT formed in the ion sensor unit 120 and the semiconductor type of the TFT formed in the display unit 130 may be different from each other, but from the viewpoint of simplifying the manufacturing process. Are preferably the same.
- the type of TFT formed on the substrate 1a is not limited to the bottom gate type, and may be a top gate type, a planar type, or the like.
- the antenna 41 may be formed on the channel region of the TFT 30. That is, the gate electrode 2d may be exposed and the gate electrode 2d itself may function as an ion sensor antenna.
- the type of TFT formed in the ion sensor unit 120 and the type of TFT formed in the display unit 130 may be different from each other.
- the gate driver 103, the source driver 104, and the driving / reading circuit 105 may be monolithically formed and directly formed on the substrate 1a.
- the Low voltage of Vdd was 0V, and the High voltage was + 10V.
- the Low voltage of Vrst was ⁇ 10V, and the High voltage was + 20V.
- Plasma cluster ion generator A plasma cluster ion generator IG-820-W manufactured by Sharp Corporation was used. Plasma cluster ions apply positive and negative voltages to the discharge electrode to electrolyze water molecules and oxygen molecules in the air to form positive ions (H + ) and negative ions (O ⁇ ). Water molecules are gathered and stabilized.
- FIG. 7 shows changes with time of Id in four types of air.
- FIG. 8 shows changes with time in the voltage of the node-Z in the four types of air. As described above, the higher the negative ion concentration, the lower the node-Z voltage. The difference between the node-Z voltage having a high negative ion concentration and the node-Z voltage having a low negative ion concentration 8 seconds after the start of the measurement was approximately 2V.
- the negative ion concentration in the atmosphere can be satisfactorily measured by the display device including the ion sensor according to the present example.
- the occupation area of the ion sensor circuit 107 of the first embodiment is on the order of micrometers, and the ion sensor circuit 107 of the first embodiment is sufficiently larger than the ion sensor unit provided in the conventional ion generator described above. It was small.
- the ion sensor part provided in the conventional ion generator performs from the antenna part to the output of a sensor signal, and exhibits substantially the same function as the ion sensor circuit 107 formed on the substrate 1a.
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Abstract
Description
以下、前記表示装置について詳述する。
前記表示装置における好ましい形態について以下に詳しく説明する。
本実施形態では、検知対象が空気中のマイナスイオンであるイオンセンサ部を備えた液晶表示装置を例に挙げて説明する。図1は、本実施形態に係る表示装置のブロック図である。
実施形態2に係る表示装置は、以下の点以外は、実施形態1と同様の構成を有する。すなわち、実施形態1に係る表示装置は、Nチャネル型のセンサTFT30を用いて大気中のマイナスイオン濃度が測定可能なイオンセンサを備えるが、実施形態2に係る表示装置は、Pチャネル型のセンサTFT30を用いて大気中のプラスイオン濃度が測定可能なイオンセンサを備える。
実施形態1及び2では、液晶表示装置を例に用いて説明したが、各実施形態の表示装置は、有機ELディスプレイ、プラズマディスプレイ等のFPDであってもよい。
(表示装置)
実施形態1と同様にして、検知対象が空気中のマイナスイオンであるイオンセンサを備えた液晶表示装置を作製した。より具体的には、センサTFT30は、水素化a-Siから形成されたボトムゲート型、かつNチャネル型のTFTであり、チャネル長(L)/チャネル幅(W)=4μm/60μmとした。アンテナ41の面積は400μm×400μmとした。node-Z保持容量43として、容量が1pFのコンデンサを用いた。
VddのLow電圧は、0Vとし、High電圧は、+10Vとした。VrstのLow電圧は、-10Vとし、High電圧は、+20Vとした。
シャープ株式会社製のプラズマクラスターイオン発生器IG-820-Wを用いた。プラズマクラスターイオンとは、放電電極にプラスとマイナスの電圧をかけて、空気中の水分子と酸素分子を電気分解し、プラスイオン(H+)とマイナスイオン(O-)としたものに、それぞれ水分子が集まり、安定化したものである。
温度条件27℃で、ドライエアー、プラズマクラスターイオン濃度低(700×103個/cm3)、プラズマクラスターイオン濃度中(1500×103個/cm3)、プラズマクラスターイオン濃度高(2000×103個/cm3)の4種類のエアーについて、出力配線を流れる電流Id及びnode-Zの電圧の経時変化を測定した。
2a:イオンセンサアンテナ電極
2b:リセット配線
2c、8:node-Z保持容量電極
2d、2e:ゲート電極
3:絶縁膜
4a、4b:水素化a-Si層
5a、5b:n+a-Si層
6a、6b:ソース電極
7a、7b:ドレイン電極
9:パッシベーション膜
10a、10b:コンタクトホール
11a:透明導電膜(第一透明導電膜)
11b:透明導電膜(第二透明導電膜)
12a:遮光膜(第一遮光膜)
12b:遮光膜(第二遮光膜)
13:カラーフィルタ
20:入力配線
21:出力配線
22:接続配線
25:定電流回路
26:アナログ-デジタル変換回路(ADC)
30:センサTFT(第一FET)
31a、31b:偏光板
32:液晶
36:液晶補助容量(Cs)
40:ピクセルTFT(第二FET)
41:イオンセンサアンテナ
42:空気イオン導入/導出路
43:node-Z保持容量
101:表示部駆動用TFTアレイ
103:ゲートドライバ(表示用走査信号線駆動回路)
104:ソースドライバ(表示用映像信号線駆動回路)
105:イオンセンサ駆動/読出し回路
106:演算処理LSI
107:イオンセンサ回路
109:電源回路
110:表示装置
115:表示部駆動回路
120、125:イオンセンサ部
130、135:表示部
Claims (11)
- イオンセンサ回路を含むイオンセンサ部と、表示部駆動回路を含む表示部とを備えた表示装置であって、
前記表示装置は、基板を有し、
前記イオンセンサ回路の少なくとも一部と、前記表示部駆動回路の少なくとも一部とは、前記基板の同一主面上に形成される
ことを特徴とする表示装置。 - 前記イオンセンサ回路は、第一電界効果トランジスタ及びイオンセンサアンテナを含み、
前記イオンセンサアンテナは、前記第一電界効果トランジスタのゲート電極に接続され、
前記表示部駆動回路は、第二電界効果トランジスタを含み、
前記第一電界効果トランジスタ及び前記イオンセンサアンテナと、前記第二電界効果トランジスタとは、前記基板の同一主面上に形成される
ことを特徴とする請求項1記載の表示装置。 - 前記イオンセンサアンテナは、透明導電膜を含む表面を有する
ことを特徴とする請求項2記載の表示装置。 - 前記透明導電膜は、第一透明導電膜であり、
前記表示部は、第二透明導電膜を有する
ことを特徴とする請求項3記載の表示装置。 - 前記第一透明導電膜及び前記第二透明導電膜は、同一の材料を含む
ことを特徴とする請求項4記載の表示装置。 - 前記第一電界効果トランジスタは、光により特性が変化する半導体を含み、
前記半導体は、遮光膜によって遮光される
ことを特徴とする請求項2~5のいずれかに記載の表示装置。 - 前記遮光膜は、第一遮光膜であり、
前記表示部は、第二遮光膜を有する
ことを特徴とする請求項6記載の表示装置。 - 前記第一遮光膜及び前記第二遮光膜は、同一の材料を含む
ことを特徴とする請求項7記載の表示装置。 - 前記イオンセンサアンテナは、前記第一電界効果トランジスタのチャネル領域と重ならないことを特徴とする請求項2~8のいずれかに記載の表示装置。
- 前記第一電界効果トランジスタは、アモルファスシリコン又は微結晶シリコンを含む
ことを特徴とする請求項2~9のいずれかに記載の表示装置。 - 前記イオンセンサ回路の少なくとも一部と、前記表示部駆動回路の少なくとも一部とは、共通の電源に接続される
ことを特徴とする請求項1~10のいずれかに記載の表示装置。
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US13/701,117 US8716709B2 (en) | 2010-06-03 | 2011-05-18 | Display device |
CN201180027099.9A CN102918577B (zh) | 2010-06-03 | 2011-05-18 | 显示装置 |
JP2012518318A JP5410605B2 (ja) | 2010-06-03 | 2011-05-18 | 表示装置 |
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US (1) | US8716709B2 (ja) |
JP (1) | JP5410605B2 (ja) |
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WO (1) | WO2011152210A1 (ja) |
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JP2020056642A (ja) * | 2018-10-01 | 2020-04-09 | ヒューグルエレクトロニクス株式会社 | イオン分布可視化装置及びイオン分布可視化システム |
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JP6548178B2 (ja) | 2015-12-16 | 2019-07-24 | パナソニックIpマネジメント株式会社 | ガスセンサ及びガスセンシングシステム |
JP2019207446A (ja) * | 2016-09-29 | 2019-12-05 | シャープ株式会社 | アンテナ付きタッチパネルディスプレイ |
CN112786670B (zh) * | 2021-01-11 | 2022-07-29 | 武汉华星光电半导体显示技术有限公司 | 一种阵列基板、显示面板及阵列基板的制作方法 |
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JP5410605B2 (ja) | 2014-02-05 |
CN102918577B (zh) | 2014-10-08 |
US8716709B2 (en) | 2014-05-06 |
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