WO2011145176A1 - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- WO2011145176A1 WO2011145176A1 PCT/JP2010/058374 JP2010058374W WO2011145176A1 WO 2011145176 A1 WO2011145176 A1 WO 2011145176A1 JP 2010058374 W JP2010058374 W JP 2010058374W WO 2011145176 A1 WO2011145176 A1 WO 2011145176A1
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- Prior art keywords
- solder
- layer
- semiconductor device
- outflow prevention
- bonding layer
- Prior art date
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Definitions
- the present invention relates to a semiconductor device in which a semiconductor element is bonded to a substrate by solder, and more particularly, to a semiconductor device in which an outflow prevention portion for preventing a solder flow is formed by a cold spray method around a solder layer and a manufacturing method thereof.
- a semiconductor device 100 shown in FIG. 10 has a semiconductor element 101 such as an IGBT mounted thereon. Since the heat generated by the semiconductor element 101 is large, a metal base substrate such as aluminum or copper having good thermal conductivity or electrical conductivity, or an insulating substrate using a ceramic plate is used for the substrate 102. When the semiconductor element 101 is bonded to the upper surface of the substrate 102 by solder, the semiconductor element 101 made of silicon is subjected to metallization processing such as a nickel alloy on the back surface to improve the bondability with the solder layer 103 and is made of metal. The substrate 102 is provided with a nickel plating layer 104 on the surface.
- an outflow prevention layer 105 for preventing the solder flow and ensuring the film thickness of the solder layer 103 is formed on the substrate 102 made by pressing a copper plate.
- the outflow prevention layer 105 masks a portion where the substrate 102 is not coated, and the exposed surface is coated by the thermal spraying apparatus.
- a method for coating the outflow prevention layer 105 a thermal spraying method for forming a thick film (50 ⁇ m or less) relatively stably is used.
- an oxide such as aluminum, silicon, or titanium is used.
- the outflow prevention layer 105 on the substrate 102 is formed so as to surround the semiconductor element 101, and melted solder is blocked by the outflow prevention layer 105 to prevent solder flow.
- a semiconductor device is a semiconductor device in which a semiconductor element is bonded to a substrate via a solder layer, and surrounds the periphery of the solder layer to prevent a solder flow during soldering.
- the outflow prevention part is formed by a cold spray method, and the surface is in an oxidized state.
- the outflow prevention portion is an outflow prevention layer formed by a cold spray method around the solder layer.
- a solder bonding layer is formed on the substrate, and the semiconductor element is bonded to the solder bonding layer via a solder layer. It is preferably an outflow prevention layer formed by a cold spray method around the bonding layer.
- an opening corresponding to the outflow prevention portion is formed between a central shielding portion corresponding to the solder layer region and an outer periphery shielding portion corresponding to an outer peripheral region of the outflow prevention portion.
- Two masks having different positions of the connecting portion connecting the central blocking portion and the outer periphery blocking portion across the opening are prepared, and the two masks are alternately used while the cold spray method is used. It is preferable to form the outflow prevention part.
- the semiconductor device is formed by forming a solder bonding layer on the substrate and bonding the semiconductor element to the solder bonding layer via the solder layer.
- the solder joint layer is formed by a cold spray method, and after the solder joint layer is oxidized and reduced, the outflow prevention portion is formed by a cold spray method.
- the semiconductor device manufacturing method the semiconductor device is formed by forming a solder bonding layer on the substrate and bonding the semiconductor element to the solder bonding layer via the solder layer.
- the solder bonding layer is formed by a cold spray method, the outflow prevention portion is formed by a cold spray method using a metal that is not reduced, and the outflow prevention portion is formed and then the solder bonding layer is oxidized.
- a reduction treatment is preferred.
- solder joint layer is formed on the substrate by a cold spray method
- a reduction treatment is performed, and a region surrounding the region where the solder layer is located in the surface of the reduced solder joint layer is oxidized gas. It is preferable to oxidize by heating in the oxidation region as the outflow prevention part.
- FIG. 1 is a cross-sectional view showing the semiconductor device of the first embodiment.
- a semiconductor element 11 such as an IGBT is mounted on a substrate 12 made of a metal such as aluminum or copper having good thermal conductivity and electrical conductivity.
- the semiconductor element 11 and the substrate 12 are joined by soldering, and a solder joining layer 14 is provided between the solder layer 13 and the substrate 12 for joining the semiconductor element 11 and the substrate 12 in order to improve solderability to the substrate 12.
- the back surface of the semiconductor element made of silicon is also subjected to a metallization process such as a nickel alloy in order to improve the bondability with the solder.
- the solder bonding layer 14 is formed of nickel, copper, tin or the like by a film forming process such as a cold spray method, a plating method, vacuum deposition, or sputtering.
- a film forming process such as a cold spray method, a plating method, vacuum deposition, or sputtering.
- Vacuum deposition and sputtering also require film formation in expensive vacuum equipment, and time is also required for evacuation and the like, resulting in poor productivity and high cost. Therefore, partial film formation is easy, and it is effective to use the cold spray method in terms of cost, processing time, and equipment cost.
- FIG. 2 is a diagram conceptually showing the configuration of a film forming apparatus that executes the cold spray method.
- the film forming apparatus 80 has a compressor 81 for supplying compressed gas, and the compressed gas sent from the compressor 81 is heated by the heating means 82 and is injected from the nozzle 84 via the pressure adjusting valve 83. Yes.
- the powder tank 85 is filled with, for example, copper powder, and a heater 86 is provided so that the copper powder fed from the powder tank 85 can be heated by the nozzle 84.
- a driving means 87 for moving the nozzle 84 in parallel is provided.
- the substrate 12 is put into a furnace and is added with 3 to 100% hydrogen in a reducing gas atmosphere (for example, argon gas, helium gas, nitrogen gas, etc.) Heat treatment is performed under a temperature condition of 200 ° C. to 700 ° C.
- the solder bonding layer 14 is heat-treated in a hydrogen gas atmosphere, whereby the oxide layer on the surface of the copper particles deposited and deposited as a film is reduced, and the non-oxidized copper covers the surface. In this way, soldering can be performed on the surface of the solder joint layer 14, but conversely, the solder tends to wet and spread by the reduction treatment, resulting in a problem of solder flow.
- solder layer 13 is required to have a certain thickness or more so that the stress can be dispersed. If the thickness is not sufficient, fatigue failure is caused.
- the semiconductor element 11 is soldered, if the solder layer 13 becomes thin due to the flow of solder that should remain in a predetermined region, it is not possible to secure a film thickness that can sufficiently distribute stress. A possibility arises. Further, if the solder wets and spreads over a wide area, the solder adheres to a connection area of wire bonds (not shown) located around the semiconductor element 11, resulting in a product defect.
- the opening portions 912 and 922 are interrupted by connecting portions 915 and 925 formed at two locations, respectively, and are not annular. This is for connecting the central shielding part 911 or 921 and the outer shielding part 913 or 923. Therefore, with only one mask, the outflow prevention layer 15 to be formed in an annular shape is interrupted at the connection portions 915 and 925. Therefore, the first mask 91 and the second mask 92 are formed with their positions shifted so that the positions of the connecting portions 915 and 925 become the other openings 922 and 912 when they are overlapped. Has been.
- the outflow prevention layer 15 In forming the outflow prevention layer 15, first, the first mask 91 shown in FIG. 3 is arranged on the substrate 12, and alignment is performed so that the central shielding portion 911 overlaps the solder bonding layer 14. Then, a film is formed by a cold spray method using the film forming apparatus 80 shown in FIG. That is, the copper powder sprayed vigorously from the nozzle 84 collides with the surface of the substrate 12 through the opening 912, and is plastically deformed to adhere to form a film. The nozzle 84 moves over the entire area of the opening 912 while spraying copper powder, whereby the first film 151 shown in FIG. 5 is formed on the substrate 12.
- FIG. 5 is a plan view showing a film formation state of the outflow prevention layer 15 formed in stages.
- the semiconductor element 11 is soldered on the solder bonding layer 14. That is, the semiconductor element 11 is stacked via a foil-shaped or pellet-shaped solder material, and soldering is performed by heating and melting the solder material. At this time, since the outflow prevention layer 15 around the solder bonding layer 14 is in a state where copper is oxidized, the molten solder does not bond and does not spread further outside. Therefore, the solder layer 13 from which the solder flow is prevented can maintain a film thickness of a certain level or more.
- the semiconductor device 1 in which the outflow prevention layer 15 is formed at low cost by using the cold spray method.
- the cold spray method it is possible to easily form a film in the atmosphere, and by using the first mask 91 and the second mask 92, partial film formation is possible at a low cost.
- the annular outflow prevention layer 15 can be formed without any break, and the outflow of solder can be further prevented.
- the outflow prevention layer 15 prevents the flow of solder, so that the area where the solder wets and spreads is limited, and does not reach the bonding area of wire bonding, thereby preventing bonding failure. Further, the positional accuracy of the semiconductor element 11 to be joined is improved.
- the cut portions 155 and 156 of the outflow prevention layer 15 are filled by alternately using the first and second masks 91 and 92 described above.
- the first mask 91 in a floating state, it is also conceivable that the sprayed copper powder goes around to the lower side of the connecting portion 915 and the film forming portion is connected.
- the cut portion 155 since the cut portion 155 is not formed, it is possible to form the outflow prevention layer 15 using only the first mask 91.
- the cutting part 155 is local and narrow. Therefore, the film may be formed using only the first mask 91 even when the solder spill does not occur in the cutting portion 155 or the spread of the solder does not interfere with the product.
- both the solder bonding layer 14 and the outflow prevention layer 15 are formed by forming a copper powder using a cold spray method. Therefore, the solder bonding layer 14 is first formed and reduced, and then the outflow prevention layer 15 is formed, leaving the oxide film without reduction. On the other hand, when a metal that is not reduced by the reduction treatment such as aluminum is used to form the outflow prevention layer 15, the reduction treatment is performed together after the solder joint layer 14 and the outflow prevention layer 15 are formed. May be.
- the outflow prevention layer 15 is formed of copper, but it is preferable to use a material having high specific gravity, specific heat, and thermal conductivity such as gold and silver in addition to the above-described aluminum.
- the semiconductor element 11 becomes a heating element, and the amount of heat generated during use increases. Therefore, by providing the outflow prevention layer 15 with good thermal conductivity, the heat dissipation performance of the entire semiconductor device 1 can be improved by thermal diffusion and transient heat absorption.
- FIG. 6 is a cross-sectional view showing the semiconductor device of the second embodiment.
- a solder bonding layer 16 is formed on the substrate 12, and the semiconductor element 11 is bonded thereon via the solder layer 13. Since the solder bonding layer 16 is formed by overlapping the outflow prevention layer 17 thereon, the solder bonding layer 16 has a larger area than the solder bonding layer 14 of the first embodiment.
- the solder bonding layer 16 is formed of nickel, copper, tin, or the like by a film forming process such as a cold spray method, a plating method, vacuum deposition, or sputtering. explain.
- the solder bonding layer 16 is formed with an outflow prevention layer 17 for preventing the solder flow because the solder wets and spreads by the reduction treatment after the film formation.
- the outflow prevention layer 17 is formed by forming a copper powder by a cold spray method, and is also formed using the first and second masks 91 and 92 shown in FIGS.
- the outflow prevention layer 17 is like a wall surrounding the semiconductor element 11, when soldering, a foil-like or pellet-like solder material and the semiconductor element 11 are placed in the frame of the outflow prevention layer 17. Can be put on top of each other. Accordingly, the height of the outflow prevention layer 17 is formed to be at least higher than the film thickness (100 to 400 ⁇ m) of the solder layer 13. This is to prevent the solder material and the semiconductor element 11 from being detached from the outflow prevention layer 17 when moving to the solder furnace without using a jig.
- the outflow prevention layer 17 having a height can be dammed so that molten solder does not flow during soldering. Further, the outflow prevention layer 17 prevents the solder flow in this way, so that a region where the solder wets and spreads is limited, and the positional accuracy of the semiconductor element 11 bonded thereon is improved.
- the semiconductor device 2 in which the outflow prevention layer 17 is formed at low cost by using the cold spray method it is possible to provide the semiconductor device 2 in which the outflow prevention layer 17 is formed at low cost by using the cold spray method, and the same effects as in the first embodiment can be obtained.
- the copper solder bonding layer 16 and the outflow prevention layer 17 having good thermal conductivity increase the volume and increase the heat capacity, thereby improving the heat dissipation performance of the entire semiconductor device 2.
- it is not necessary to hold the soldering material or the semiconductor element 11 in the outflow prevention layer 17 until the soldering is completed it is possible to eliminate the jig and simplify the production equipment. This also makes it possible to reduce costs.
- FIG. 7 is a cross-sectional view showing the semiconductor device of the third embodiment.
- the same components as those in FIG. 1 will be described with the same reference numerals.
- a solder bonding layer 14 is formed on a substrate 12, and a semiconductor element 11 is bonded thereon via a solder layer 13.
- the solder bonding layer 14 is formed by forming a copper powder by a cold spray method. Since the solder wets and spreads by the reduction treatment after the film formation, an outflow prevention layer 18 for preventing the solder flow is formed around the solder bonding layer 14. Yes.
- the outflow prevention layer 18 is formed by forming a copper powder by a cold spray method, and is also formed using the first and second masks 91 and 92 shown in FIGS.
- the outflow prevention layer 18 is formed directly on the substrate 12 and is formed like a wall surrounding the semiconductor element 11.
- the film thickness of the outflow prevention layer 18 is formed so as to be higher than at least the solder layer 13 on the solder bonding layer 14. Therefore, even if a jig is not used, the solder material and the semiconductor element 11 do not come off from the outflow prevention layer 18 when moving to the solder furnace.
- the outflow prevention layer 18 having a height can be dammed so that molten solder does not flow during soldering. Further, the outflow prevention layer 18 prevents the solder flow, so that a region where the solder wets and spreads is limited, and the positional accuracy of the semiconductor element 11 bonded thereon is improved.
- the semiconductor device 3 in which the outflow prevention layer 18 is formed at low cost by using the cold spray method since the copper outflow prevention layer 18 having good thermal conductivity increases the volume and the heat capacity, the heat dissipation performance of the entire semiconductor device 3 can be improved. Furthermore, since it is not necessary to hold the soldering material or the semiconductor element 11 in the outflow prevention layer 18 until the soldering is completed, it is possible to eliminate jigs and simplify the production equipment. This also makes it possible to reduce costs.
- FIG. 8 is a cross-sectional view showing the semiconductor device of the fourth embodiment.
- the same components as those in FIG. 1 will be described with the same reference numerals.
- a solder bonding layer 21 is formed on the substrate 12, and the semiconductor element 11 is bonded thereon via the solder layer 13.
- the solder bonding layer 21 is formed by forming a copper powder film by a cold spray method, and has a larger area than the semiconductor element 11 and the solder layer 13.
- the solder joint layer 21 after film formation is oxidized and cannot be soldered as it is. On the other hand, if the whole is reduced, a solder flow occurs. Therefore, in this embodiment, partial reduction treatment is performed so that the solder portion does not occur leaving the oxidized portion. That is, the reduced portion 211 is formed in the central region of the solder bonding layer 21 where the solder layer 13 is disposed, and the oxidized portion 212 that is present around the oxidized portion 212 serves as an outflow prevention portion.
- FIG. 9 is an image diagram showing a partial reduction method.
- the reduction treatment is performed by heating at a predetermined temperature in a reducing gas having a reducing property.
- the solder joint layer 21 is placed in a reducing gas such as hydrogen.
- a pulse mode laser is emitted from the laser device 220 toward the surface of the solder bonding layer 21. While irradiating the laser at each location for a certain period of time, the irradiation location is shifted little by little and only the reduced portion 211 is irradiated.
- the pulse mode laser has an energy of about 0.1 to 2.0 J / (cm 2 ⁇ pulse) sufficient for reduction of the laser irradiation point, and is injected for a short time of 100 msec or less. Therefore, only the portion irradiated with the laser is reduced, and the surroundings are not reduced because the temperature rise is suppressed.
- the laser scanning speed, the pulse irradiation period, the beam diameter, the laser wavelength, and the irradiation surface reflectance are appropriately set depending on the film thickness of the solder bonding layer 21 and the surrounding structure.
- a CO 2 laser, a YAG laser, a fiber laser, or the like is used for the laser device 220.
- the reducing gas may be supplied as an atmospheric gas in the chamber, or may be sprayed on the laser irradiation portion.
- the semiconductor element 11 is overlaid on the reduced portion 211 via a foil-like or pellet-like solder, and soldering is performed by heating. At that time, the solder portion is prevented from flowing because the oxidized portion 212 is formed around the solder by the cold spray method. Therefore, according to the present embodiment, it is possible to provide the semiconductor device 4 formed at low cost by using the solder bonding layer 21 formed by using the cold spray method as an outflow prevention portion for preventing the solder flow as it is. become.
- the method of partially reducing the solder joint layer 21 has been described. Instead, a method of partially oxidizing the solder joint layer 21 will be described next.
- the solder joint layer 21 is first subjected to a reduction treatment heated in a reducing gas. For this reason, the whole is reduced, and a solder flow is generated as it is, so that the oxidation treatment is partially performed. That is, the reduced portion 211 is left in the center of the solder bonding layer 21, and an oxidized portion 212 is formed around the reduced portion 211 as an outflow prevention portion.
- the solder bonding layer 21 is placed in an oxidizing gas containing oxygen or a halogen-based oxidizing gas.
- the solder bonding layer 21 is irradiated with a pulse mode laser from the laser device 220 toward the surface of the solder bonding layer 21.
- the irradiation location here is a location corresponding to the oxidized portion 212 of the solder bonding layer 21.
- the pulse mode laser has sufficient energy to oxidize the laser irradiation point and is injected for a predetermined time. Therefore, only the portion irradiated with the laser is oxidized, and the central portion is not oxidized.
- the oxidized portion 212 which is limited to the outer peripheral portion, has a smaller area. For this reason, there is an advantage that the laser irradiation time can be shortened.
- the laser scanning speed, the pulse irradiation period, the beam diameter, the laser wavelength, and the irradiation surface reflectance are appropriately set depending on the film thickness of the solder bonding layer 21 and the surrounding structure.
- a CO 2 laser, a YAG laser, a fiber laser, or the like is used for the laser device 220.
- the oxidizing gas has a high oxidizing power when it contains high-concentration oxygen or halogen, and may be diluted as necessary. Further, the oxidizing gas may be supplied as an atmospheric gas in the chamber, or may be sprayed on the laser irradiation portion.
- a reduced portion 211 and an oxidized portion 212 in a predetermined region are formed in the solder bonding layer 21 even by partial oxidation.
- the semiconductor element 11 is overlaid on the reduced portion 211 via a foil-like or pellet-like solder, and soldering is performed by heating.
- the oxidized portion 212 surrounds the solder, the solder flow is prevented. In this way, it has become possible to provide an inexpensive semiconductor device 4 having an oxidized portion 212 formed in the solder bonding layer 21 formed by using the cold spray method and serving as an outflow preventing portion for preventing the solder flow.
- the present invention is not limited to the above-described embodiment, and it goes without saying that various improvements and modifications can be made without departing from the spirit of the present invention.
- the outflow prevention layer 15 and the like are made of oxidized copper has been described.
- aluminum, titanium, Iron, silver, etc. can also be used.
- the solder bonding layers 14 and 16 are formed.
- the substrate 12 is formed of copper, nickel, tin, or an alloy thereof and the solder can be directly bonded, the solder bonding layers 14 are formed.
- , 16 may be omitted.
- a protective film may be formed on the solder bonding layers 14 and 16 with a resin or the like, and after forming the outflow prevention layers 15, 17 and 18 by a cold spray method, the protective film may be peeled off.
- the substrate 12 may be an insulating substrate using a ceramic plate.
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Abstract
Description
上記半導体装置は、前記流出防止部が、前記半田層の周りにコールドスプレー法によって成膜された流出防止層であることが好ましい。
上記半導体装置は、前記基板の上には半田接合層が成膜され、前記半導体素子が前記半田接合層の上に半田層を介して接合されたものであり、前記流出防止部は、前記半田接合層の周りに沿ってコールドスプレー法により成膜された流出防止層であることが好ましい。
上記半導体装置は、前記基板の上には半田接合層が成膜され、前記半導体素子が前記半田接合層の上に半田層を介して接合されたものであり、前記流出防止部は、前記半田接合層の上にコールドスプレー法により成膜された流出防止層であることが好ましい。
上記半導体装置は、前記流出防止層が、前記半田層よりも高くなる厚さで成膜されたものであることが好ましい。
上記半導体装置は、前記半田接合層が、成膜時に酸化した金属が還元処理されたものであり、前記流出防止層は、成膜時に酸化されたままの金属によって形成されたものであることが好ましい。
上記半導体装置は、前記半田接合層が、コールドスプレー法によって成膜されたものであることが好ましい。
上記半導体装置は、前記基板の上にはコールドスプレー法により半田接合層が成膜され、前記半導体素子が前記半田接合層の上に半田層を介して接合されたものであり、前記流出防止部は、還元処理された前記半田接合層の表面について、前記半田層が位置する領域を囲むように酸化ガス中での加熱により酸化された領域であることが好ましい。
上記半導体装置の製造方法は、前記半導体装置が、前記基板の上には半田接合層が成膜され、前記半導体素子が前記半田接合層の上に半田層を介して接合されたものである場合に、前記半田接合層をコールドスプレー法により成膜し、前記半田接合層を酸化還元処理した後に、前記流出防止部をコールドスプレー法により成膜することが好ましい。
上記半導体装置の製造方法は、前記半導体装置が、前記基板の上には半田接合層が成膜され、前記半導体素子が前記半田接合層の上に半田層を介して接合されたものである場合に、前記半田接合層をコールドスプレー法により成膜し、前記流出防止部を還元されない金属を使用してコールドスプレー法によって成膜し、前記流出防止部を成膜した後に前記半田接合層を酸化還元処理することが好ましい。
上記半導体装置の製造方法は、前記半導体装置は、前記基板の上には半田接合層が成膜され、前記半導体素子が前記半田接合層の上に半田層を介して接合されたものである場合に、前記基板の上にはコールドスプレー法により前記半田接合層を成膜した後に還元処理し、還元された前記半田接合層の表面のうち、前記半田層が位置する領域を囲む領域を酸化ガス中で加熱して酸化し、当該酸化領域を前記流出防止部とすることが好ましい。
11 半導体素子
12 基板
13 半田層
14 半田接合層
15 流出防止層
91 第1マスク
92 第2マスク
次に、本発明に係る半導体装置の第2実施形態について説明する。図6は、第2実施形態の半導体装置を示した断面図である。図1と同じ構成については、同じ符号を付して説明する。半導体装置2は、基板12の上に半田接合層16が成膜され、その上に半田層13を介して半導体素子11が接合されている。半田接合層16は、その上に流出防止層17を重ねて形成するため、前記第1実施形態の半田接合層14よりも面積が大きく形成されている。
次に、本発明に係る半導体装置の第3実施形態について説明する。図7は、第3実施形態の半導体装置を示した断面図である。図1と同じ構成については、同じ符号を付して説明する。半導体装置3は、基板12の上に半田接合層14が成膜され、その上に半田層13を介して半導体素子11が接合されている。半田接合層14は、銅粉末をコールドスプレー法によって成膜したものであり、成膜後の還元処理によって半田が濡れ拡がるため、その周りに半田流れを防止する流出防止層18が成膜されている。流出防止層18は、銅粉末をコールドスプレー法によって成膜されたものであり、ここでも図3及び図4に示す第1及び第2マスク91,92を使用して形成される。
次に、本発明に係る半導体装置の第4実施形態について説明する。図8は、第4実施形態の半導体装置を示した断面図である。図1と同じ構成については、同じ符号を付して説明する。半導体装置4は、基板12の上に半田接合層21が成膜され、その上に半田層13を介して半導体素子11が接合されている。半田接合層21は、銅粉末をコールドスプレー法によって成膜されたものであり、半導体素子11や半田層13よりも面積が大きく形成されている。
前記各実施形態では、流出防止層15などを酸化した銅によって構成した場合を説明したが、半田と接合せず濡れない材料であれば、コールドスプレー法によって成膜する材料として、アルミニウム、チタン、鉄、銀などの使用も可能である。
また、第1乃至第3実施形態では半田接合層14,16が形成されているが、基板12が銅やニッケル、スズあるいはその合金で形成され、半田が直接接合できる場合には半田接合層14,16を省いた構成であってもよい。
また、基板12は、セラッミクス板を用いた絶縁基板であってもよい。
Claims (16)
- 基板の上に半田層を介して半導体素子を接合した半導体装置において、
前記半田層の周りを囲むことにより半田付けの際の半田流れを防止する流出防止部を有し、その流出防止部が、コールドスプレー法によって成膜されたものであり、表面が酸化された状態であることを特徴とする半導体装置。 - 請求項1に記載する半導体装置において、
前記流出防止部は、前記半田層の周りにコールドスプレー法によって成膜された流出防止層であることを特徴とする半導体装置。 - 請求項1に記載する半導体装置において、
前記基板の上には半田接合層が成膜され、前記半導体素子が前記半田接合層の上に半田層を介して接合されたものであり、前記流出防止部は、前記半田接合層の周りに沿ってコールドスプレー法により成膜された流出防止層であることを特徴とする半導体装置。 - 請求項3に記載する半導体装置において、
前記流出防止層は、前記半田層よりも高くなる厚さで成膜されたものであることを特徴とする半導体装置。 - 請求項1に記載する半導体装置において、
前記基板の上には半田接合層が成膜され、前記半導体素子が前記半田接合層の上に半田層を介して接合されたものであり、前記流出防止部は、前記半田接合層の上にコールドスプレー法により成膜された流出防止層であることを特徴とする半導体装置。 - 請求項5に記載する半導体装置において、
前記流出防止層は、前記半田層よりも高くなる厚さで成膜されたものであることを特徴とする半導体装置。 - 請求項3乃至請求項6のいずれかに記載する半導体装置において、
前記半田接合層は、成膜時に酸化した金属が還元処理されたものであり、前記流出防止層は、成膜時に酸化されたままの金属によって形成されたものであることを特徴とする半導体装置。 - 請求項7に記載する半導体装置において、
前記半田接合層は、コールドスプレー法によって成膜されたものであることを特徴とする半導体装置。 - 請求項1に記載する半導体装置において、
前記基板の上にはコールドスプレー法により半田接合層が成膜され、前記半導体素子が前記半田接合層の上に半田層を介して接合されたものであり、
前記半田接合層は、成膜によって酸化した表面のうち、前記半田層が位置する領域が還元ガス中での加熱により還元され、前記流出防止部は、還元された領域の周辺に酸化されたままの領域であることを特徴とする半導体装置。 - 請求項1に記載する半導体装置において、
前記基板の上にはコールドスプレー法により半田接合層が成膜され、前記半導体素子が前記半田接合層の上に半田層を介して接合されたものであり、
前記流出防止部は、還元処理された前記半田接合層の表面について、前記半田層が位置する領域を囲むように酸化ガス中での加熱により酸化された領域であることを特徴とする半導体装置。 - 基板の上に半田層を介して半導体素子を接合する際、溶融した半田の半田流れを防止しながら前記半導体素子を半田付けする半導体装置の製造方法において、
前記基板の上に前記半田層の周りを囲む領域に、表面が酸化された状態の流出防止部をコールドスプレー法を使用した成膜によって形成し、
前記流出防止部に囲まれた中に半田材が配置され、熱を加えて前記半田材を溶融させて前記半導体素子を半田付けすることを特徴とする半導体装置の製造方法。 - 請求項11に記載する半導体装置の製造方法において、
前記半田層の領域に対応する中央遮蔽部と、前記流出防止部の外周領域に対応する外周遮蔽部との間に、前記流出防止部に対応する開口部が形成され、前記開口部を横切って前記中央遮断部と外周遮断部とを連結する連結部の位置が異なる2枚のマスクを用意し、
前記2枚のマスクを交互に使用しながらコールドスプレー法によって前記流出防止部を成膜することを特徴とする半導体装置の製造方法。 - 請求項11に記載する半導体装置の製造方法において、
前記半導体装置は、前記基板の上には半田接合層が成膜され、前記半導体素子が前記半田接合層の上に半田層を介して接合されたものである場合に、
前記半田接合層をコールドスプレー法により成膜し、前記半田接合層を酸化還元処理した後に、前記流出防止部をコールドスプレー法により成膜することを特徴とする半導体装置の製造方法。 - 請求項11に記載する半導体装置の製造方法において、
前記半導体装置は、前記基板の上には半田接合層が成膜され、前記半導体素子が前記半田接合層の上に半田層を介して接合されたものである場合に、
前記半田接合層をコールドスプレー法により成膜し、前記流出防止部を還元されない金属を使用してコールドスプレー法によって成膜し、前記流出防止部を成膜した後に前記半田接合層を酸化還元処理することを特徴とする半導体装置の製造方法。 - 請求項11に記載する半導体装置の製造方法において、
前記半導体装置は、前記基板の上には半田接合層が成膜され、前記半導体素子が前記半田接合層の上に半田層を介して接合されたものである場合に、
前記基板の上にはコールドスプレー法により前記半田接合層を成膜し、
前記半田接合層の酸化した表面のうち、前記半田層が位置する領域を還元ガス中で加熱して還元し、その還元された領域の周辺に酸化されたまま残した領域を前記流出防止部とすることを特徴とする半導体装置の製造方法。 - 請求項11に記載する半導体装置の製造方法において、
前記半導体装置は、前記基板の上には半田接合層が成膜され、前記半導体素子が前記半田接合層の上に半田層を介して接合されたものである場合に、
前記基板の上にはコールドスプレー法により前記半田接合層を成膜した後に還元処理し、
還元された前記半田接合層の表面のうち、前記半田層が位置する領域を囲む領域を酸化ガス中で加熱して酸化し、当該酸化領域を前記流出防止部とすることを特徴とする半導体装置の製造方法。
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- 2010-05-18 JP JP2010544106A patent/JP5565315B2/ja active Active
- 2010-05-18 WO PCT/JP2010/058374 patent/WO2011145176A1/ja active Application Filing
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JP2013247256A (ja) * | 2012-05-28 | 2013-12-09 | Hitachi Ltd | 半導体装置およびその製造方法 |
JP2014187180A (ja) * | 2013-03-22 | 2014-10-02 | Mitsubishi Materials Corp | 半導体装置用接合体、パワーモジュール用基板及びパワーモジュール |
JP2016086069A (ja) * | 2014-10-24 | 2016-05-19 | 三菱電機株式会社 | 半導体素子および半導体装置 |
JP2017129086A (ja) * | 2016-01-21 | 2017-07-27 | トヨタ自動車株式会社 | シリンダヘッドの製造方法 |
WO2019207996A1 (ja) * | 2018-04-23 | 2019-10-31 | 株式会社日立パワーデバイス | 半導体装置およびその製造方法 |
WO2022153780A1 (ja) * | 2021-01-13 | 2022-07-21 | 三菱電機株式会社 | 半導体装置、電力変換装置および半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
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US8865584B2 (en) | 2014-10-21 |
CN102549738B (zh) | 2015-07-01 |
KR101343289B1 (ko) | 2013-12-18 |
US20120126411A1 (en) | 2012-05-24 |
JPWO2011145176A1 (ja) | 2013-07-22 |
EP2573809A1 (en) | 2013-03-27 |
EP2573809A4 (en) | 2017-05-24 |
KR20120049319A (ko) | 2012-05-16 |
JP5565315B2 (ja) | 2014-08-06 |
CN102549738A (zh) | 2012-07-04 |
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