WO2011125691A1 - Composition de résine pour utilisation dans une couche isolante de transistor organique en couche mince, couche isolante de protection, et transistor organique en couche mince - Google Patents

Composition de résine pour utilisation dans une couche isolante de transistor organique en couche mince, couche isolante de protection, et transistor organique en couche mince Download PDF

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WO2011125691A1
WO2011125691A1 PCT/JP2011/057938 JP2011057938W WO2011125691A1 WO 2011125691 A1 WO2011125691 A1 WO 2011125691A1 JP 2011057938 W JP2011057938 W JP 2011057938W WO 2011125691 A1 WO2011125691 A1 WO 2011125691A1
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group
film transistor
organic thin
insulating layer
thin film
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PCT/JP2011/057938
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Japanese (ja)
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公 矢作
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住友化学株式会社
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C08F212/16—Halogens
    • C08F212/20—Fluorine
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/06—Hydrocarbons
    • C08F212/08—Styrene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/34—Esters containing nitrogen, e.g. N,N-dimethylaminoethyl (meth)acrylate
    • C08F220/343—Esters containing nitrogen, e.g. N,N-dimethylaminoethyl (meth)acrylate in the form of urethane links
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate

Definitions

  • the present invention relates to a resin composition for an organic thin film transistor insulating layer suitable for an organic thin film transistor, and particularly to a resin composition for an organic thin film transistor insulating layer for an overcoat insulating layer.
  • Organic field effect transistors are more flexible than inorganic semiconductors and can be manufactured by a low-temperature process. Therefore, a plastic substrate or film can be used as a substrate, resulting in an element that is lightweight and not easily broken.
  • an element can be manufactured by application of a solution containing an organic material or film formation using a printing method, and a large number of elements can be manufactured over a large substrate at low cost.
  • materials having different molecular structures are used for studying, elements having a wide range of characteristics can be manufactured.
  • An organic semiconductor compound used for an organic field effect transistor which is an embodiment of an organic thin film transistor is easily affected by an environment such as humidity and oxygen, and the transistor characteristics are likely to deteriorate with time due to humidity and oxygen.
  • the organic semiconductor compound is coated and protected by a gate insulating layer.
  • a resin composition is used to form an overcoat insulating layer, a gate insulating layer, and the like that cover an organic semiconductor layer.
  • the resin composition used to form such an insulating layer and insulating film is referred to as an insulating layer resin composition.
  • Patent Document 1 the performance of an organic field effect transistor is affected by components or materials other than the organic semiconductor that constitutes the organic field effect transistor, and the use of a low dielectric constant material as a gate insulating layer enables organic performance. It is described that the hysteresis of the field effect transistor is lowered and the threshold voltage is also lowered.
  • Materials used for the gate insulating layer of organic field effect transistors include amorphous polypropylene, low dielectric constant fluoropolymers such as “TEFLON AF” (trade name) manufactured by DuPont, and “CYTOP” (trade name) manufactured by Asahi Glass. ) And other tetrafluoroethylene copolymers.
  • the organic thin film transistor using the conventional thermoplastic resin is used.
  • the absolute value of the threshold voltage (Vth) and hysteresis of the organic thin film transistor are not sufficiently lowered.
  • An object of the present invention is to provide a resin composition for an organic thin film transistor insulating layer capable of producing an organic thin film transistor having a small absolute value of threshold voltage and small hysteresis.
  • the absolute value of the threshold voltage and hysteresis of the organic thin film transistor can be reduced by forming an insulating layer using a specific resin composition containing a fluorine atom and capable of forming a crosslinked structure.
  • the inventors have found that it can be made smaller, and have reached the present invention.
  • the present invention has the formula
  • R 1 , R 2 and R 3 are the same or different and each represents a hydrogen atom, a fluorine atom or a monovalent organic group having 1 to 20 carbon atoms.
  • R represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms which does not have a fluorine atom.
  • Rf represents a fluorine atom or a monovalent organic group having 1 to 20 carbon atoms having a fluorine atom.
  • Raa represents a divalent organic group having 1 to 20 carbon atoms.
  • a hydrogen atom in the divalent organic group may be substituted with a fluorine atom.
  • a represents an integer of 0 to 20, and b represents an integer of 1 to 5.
  • X represents a hydrogen atom, a fluorine atom, a chlorine atom or a monovalent organic group having 1 to 20 carbon atoms substituted with fluorine.
  • R 4 represents an alkylene group.
  • a hydrogen atom in the alkylene group may be substituted with a fluorine atom.
  • the said high molecular compound (A) contains two or more 1st functional groups in a molecule
  • the first functional group is at least one group selected from the group consisting of an isocyanato group blocked with a blocking agent and an isothiocyanato group blocked with a blocking agent.
  • the isocyanato group blocked with the blocking agent and the isothiocyanato group blocked with the blocking agent are represented by the formula:
  • X ′ represents an oxygen atom or a sulfur atom
  • R 5 and R 6 are the same or different and represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms. ] It is group represented by these.
  • the isocyanato group blocked with the blocking agent and the isothiocyanato group blocked with the blocking agent are represented by the formula:
  • X ′ represents an oxygen atom or a sulfur atom
  • R 7 , R 8 and R 9 are the same or different and represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms.
  • the present invention also includes a step of applying a liquid containing the resin composition for an organic thin film transistor insulating layer according to any one of the above to a substrate to form a coating layer; and applying electromagnetic waves or heat to the coating layer A step of generating a second functional group from the first functional group of the polymer compound (A) and reacting with the active hydrogen-containing group of the active hydrogen compound (B); And a method for forming an organic thin film transistor insulating layer including the same.
  • the present invention also provides an overcoat insulating layer for organic thin film transistors formed using the resin composition for organic thin film transistor insulating layers.
  • the present invention also provides an organic thin film transistor having the overcoat insulating layer.
  • the present invention provides the organic thin film transistor which is a bottom gate top contact type organic thin film transistor or a bottom gate bottom contact type organic thin film transistor.
  • the present invention also provides a display member including the organic thin film transistor.
  • the present invention also provides a display including the display member.
  • the organic thin film transistor manufactured using the resin composition for an organic thin film transistor insulating layer of the present invention has a small absolute value of threshold voltage and hysteresis.
  • the “polymer compound” refers to a compound having a structure in which a plurality of the same structural units are repeated in the molecule, and includes a so-called dimer.
  • the resin composition for an organic thin film transistor insulating layer of the present invention contains a polymer compound (A) and an active hydrogen compound (B).
  • Active hydrogen refers to a hydrogen atom bonded to an atom other than a carbon atom such as an oxygen atom, a nitrogen atom and a sulfur atom.
  • Polymer compound (A) The polymer compound (A) has a repeating unit represented by the formula (1). Especially, it is preferable that a high molecular compound (A) has two or more 1st functional groups which produce
  • the formed insulating layer has a low polarity as a whole, there are few components that are easily polarized even when a voltage is applied, and the polarization of the insulating layer is suppressed. .
  • the movement of the molecular structure is suppressed, and the polarization of the insulating layer is suppressed.
  • the polarization of the insulating layer is suppressed, for example, when used as an overcoat insulating layer or a gate insulating layer, the absolute value and hysteresis of the threshold voltage of the organic thin film transistor are reduced, and the operation accuracy is improved.
  • the fluorine atom does not replace the hydrogen atom of the main chain of the polymer compound, but replaces the hydrogen atom of the side chain or side group (pendant group).
  • the fluorine atom is substituted with a side chain or a side group, the affinity for another organic material such as an organic semiconductor is not lowered, and the organic material is easily in contact with the exposed surface of the insulating layer to form a layer.
  • the first functional group that the polymer compound (A) may have does not react with active hydrogen, but when the electromagnetic wave or heat acts on the first functional group, the second functional group is generated, Reacts with active hydrogen. That is, the first functional group is deprotected by electromagnetic waves or heat to generate a second functional group that reacts with active hydrogen.
  • the second functional group reacts with and binds to the active hydrogen-containing group of the active hydrogen compound (B), so that a crosslinked structure can be formed inside the insulating layer.
  • the second functional group is protected (blocked) in the step of forming the gate insulating layer until it is irradiated with electromagnetic waves or acts of heat, and is present in the resin composition as the first functional group.
  • the storage stability of the resin composition is improved.
  • a polymer compound having a repeating unit having a group containing a fluorine atom and a repeating unit having the first functional group corresponds to the polymer compound (A).
  • Preferred examples of the group containing a fluorine atom are an aryl group in which a hydrogen atom is substituted with fluorine, an alkylaryl group, particularly a phenyl group in which a hydrogen atom is substituted with fluorine, and an alkylphenyl group.
  • a preferred structure of the repeating unit having a group containing a fluorine atom is represented by the above formula (1).
  • R 1 to R 3 are the same or different and each represents a hydrogen atom, a fluorine atom, or a monovalent organic group having 1 to 20 carbon atoms. A hydrogen atom in the monovalent organic group may be substituted with a fluorine atom. In one certain form, R 1 to R 3 are all hydrogen atoms.
  • Raa represents a divalent organic group having 1 to 20 carbon atoms. A hydrogen atom in the divalent organic group may be substituted with a fluorine atom.
  • a represents an integer of 0 to 20. In one certain form, a is 0.
  • R represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms having no fluorine atom.
  • b represents an integer of 1 to 5. In one certain form, b is 5.
  • Rf represents a monovalent organic group having 1 to 20 carbon atoms in which a fluorine atom or at least one hydrogen atom is substituted with a fluorine atom.
  • Rf is a fluorine atom, a 2,2,2-trifluoroethyl group, a 2,2,3,3,3-pentafluoropropyl group, or a 2- (perfluorobutyl) ethyl group.
  • the monovalent organic group having 1 to 20 carbon atoms as R 1 to R 3 , R or Rf may be linear, branched or cyclic, and may be saturated or unsaturated.
  • Examples of the monovalent organic group having 1 to 20 carbon atoms include a linear hydrocarbon group having 1 to 20 carbon atoms, a branched hydrocarbon group having 3 to 20 carbon atoms, and a cyclic hydrocarbon having 3 to 20 carbon atoms.
  • R 1 to R 3 include straight-chain hydrocarbon groups having 1 to 20 carbon atoms, branched hydrocarbon groups having 3 to 20 carbon atoms, and cyclic hydrocarbon groups having 3 to 20 carbon atoms.
  • a hydrogen atom may be substituted with a fluorine atom.
  • a hydrogen atom in the group may be substituted with an alkyl group, a halogen atom or the like.
  • a hydrogen atom in the group may be substituted with an alkyl group, a halogen atom other than a fluorine atom, or the like.
  • Examples of the monovalent organic group having 1 to 20 carbon atoms as R 1 to R 3 include methyl group, ethyl group, propyl group, butyl group, pentyl group, hexyl group, isopropyl group, isobutyl group, tertiary butyl group, Cyclopropyl group, cyclobutyl group, cyclopentyl group, cyclohexyl group, cyclopentynyl group, cyclohexynyl group, trifluoromethyl group, trifluoroethyl group, phenyl group, naphthyl group, anthryl group, tolyl group, xylyl group, dimethylphenyl group , Trimethylphenyl group, ethylphenyl group, diethylphenyl group, triethylphenyl group, propylphenyl group, butylphenyl group, methylnaphthyl group, dimethyln
  • Examples of the monovalent organic group having 1 to 20 carbon atoms as R include methyl group, ethyl group, propyl group, butyl group, pentyl group, hexyl group, isopropyl group, isobutyl group, tertiary butyl group, cyclopropyl group, Cyclobutyl group, cyclopentyl group, cyclohexyl group, cyclopentynyl group, cyclohexylinyl group, phenyl group, naphthyl group, anthryl group, tolyl group, xylyl group, dimethylphenyl group, trimethylphenyl group, ethylphenyl group, diethylphenyl group, triethyl Phenyl group, propylphenyl group, butylphenyl group, methylnaphthyl group, dimethylnaphthyl group, trimethylnaphthyl group, vinyl
  • examples of the monovalent organic group having 1 to 20 carbon atoms as Rf include a trifluoromethyl group and a trifluoroethyl group.
  • an alkyl group is preferable.
  • the divalent organic group having 1 to 20 carbon atoms may be linear, branched or cyclic, for example, a linear aliphatic hydrocarbon group having 1 to 20 carbon atoms, or 3 to 20 carbon atoms.
  • Aromatic hydrocarbon having 6 to 20 carbon atoms which may be substituted with a linear hydrocarbon group having 6 to 6, a branched hydrocarbon group having 3 to 6 carbon atoms, a cyclic hydrocarbon group having 3 to 6 carbon atoms, an alkyl group, or the like A group hydrocarbon group is preferred.
  • Aliphatic hydrocarbon groups include methylene, ethylene, propylene, butylene, pentylene, hexylene, isopropylene, isobutylene, dimethylpropylene, cyclopropylene, cyclobutylene, and cyclopentylene. And a cyclohexylene group.
  • Examples of the divalent aromatic hydrocarbon group having 6 to 20 carbon atoms include phenylene group, naphthylene group, anthrylene group, dimethylphenylene group, trimethylphenylene group, ethylenephenylene group, diethylenephenylene group, triethylenephenylene group, and propylenephenylene group.
  • a preferred embodiment of the repeating unit represented by the formula (1) is a repeating unit represented by the formula (1-a).
  • preferable examples of the first functional group include an isocyanato group blocked with a blocking agent or an isothiocyanato group blocked with a blocking agent.
  • the isocyanate group blocked with the blocking agent or the blocked isothiocyanato group reacts with the blocking agent having only one active hydrogen capable of reacting with the isocyanato group or isothiocyanato group with the isocyanato group or isothiocyanato group. Can be manufactured.
  • the blocking agent is preferably one that dissociates at a temperature of 170 ° C. or lower even after reacting with an isocyanato group or isothiocyanato group.
  • the blocking agent include alcohol compounds, phenol compounds, active methylene compounds, mercaptan compounds, acid amide compounds, acid imide compounds, imidazole compounds, urea compounds, and oxime compounds.
  • an oxime type compound and a pyrazole type compound are mentioned.
  • the blocking agent include alcohol compounds such as methanol, ethanol, propanol, butanol, 2-ethylhexanol, methyl cellosolve, butyl cellosolve, methyl carbitol, benzyl alcohol, and cyclohexanol.
  • alcohol compounds such as methanol, ethanol, propanol, butanol, 2-ethylhexanol, methyl cellosolve, butyl cellosolve, methyl carbitol, benzyl alcohol, and cyclohexanol.
  • phenolic compounds include phenol, cresol, ethylphenol, butylphenol, nonylphenol, dinonylphenol, styrenated phenol, hydroxybenzoic acid ester, and the like.
  • active methylene compound include dimethyl malonate, diethyl malonate, methyl acetoacetate, ethyl acetoacetate, and acetylacetone.
  • Examples of mercaptan compounds include butyl mercaptan and dodecyl mercaptan.
  • acid amide compounds include acetanilide, acetic acid amide, ⁇ -caprolactam, ⁇ -valerolactam, and ⁇ -butyrolactam.
  • acid imide compounds include succinimide and maleic imide.
  • Examples of the imidazole compound include imidazole and 2-methylimidazole.
  • Examples of urea compounds include urea, thiourea, and ethylene urea.
  • Examples of oxime compounds include formal oxime, acetal oxime, acetoxime, methyl ethyl ketoxime, cyclohexanone oxime, and the like.
  • Examples of the amine compound include diphenylamine, aniline, carbazole and the like.
  • Examples of the imine compound include ethyleneimine and polyethyleneimine.
  • Examples of the bisulfite include sodium bisulfite.
  • Examples of pyridine compounds include 2-hydroxypyridine and 2-hydroxyquinoline.
  • Examples of the pyrazole compound include 3,5-dimethylpyrazole, 3,5-diethylpyrazole and the like.
  • the isocyanato group or isothiocyanato group blocked with a blocking agent that may be used in the present invention is preferably a group represented by the above formula (4) or formula (5).
  • X ′ represents an oxygen atom or a sulfur atom
  • R 5 to R 9 are the same or different and represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms.
  • the definition and specific examples of the monovalent organic group are the same as the definition and specific examples of the monovalent organic group in R 1 to R 3 described above.
  • R 5 and R 6 are the same or different and are a group selected from the group consisting of a methyl group and an ethyl group, R 7 and R 8 are a methyl group, and R 9 is a hydrogen atom. .
  • Examples of the isocyanato group blocked with a blocking agent include O- (methylideneamino) carboxyamino group, O- (1-ethylideneamino) carboxyamino group, O- (1-methylethylideneamino) carboxyamino group, O— [1-methylpropylideneamino] carboxyamino group, N- (3,5-dimethylpyrazolylcarbonyl) amino group, N- (3-ethyl-5-methylpyrazolylcarbonyl) amino group, N- (3,5-diethyl And pyrazolylcarbonyl) amino group, N- (3-propyl-5-methylpyrazolylcarbonyl) amino group, and N- (3-ethyl-5-propylpyrazolylcarbonyl) amino group.
  • Examples of the isothiocyanato group blocked with a blocking agent include an O- (methylideneamino) thiocarboxyamino group, an O- (1-ethylideneamino) thiocarboxyamino group, and an O- (1-methylethylideneamino) thiocarboxyamino group.
  • the first functional group used in the present invention is preferably an isocyanato group blocked with a blocking agent.
  • the polymer compound (A) includes, for example, a polymerizable monomer that is a raw material of the repeating unit represented by the general formula (1) and a polymerizable monomer containing the first functional group, as a photopolymerization initiator or heat. It can manufacture by the method of copolymerizing using a polymerization initiator.
  • Examples of the polymerizable monomer that is a raw material for the repeating unit represented by the general formula (1) include 4-trifluoromethylstyrene, 2,3,4,5,6-pentafluorostyrene, 4-fluoromethylstyrene, and the like. It is done.
  • Examples of the polymerizable monomer containing the first functional group include a monomer having an isocyanato group blocked with a blocking agent or an isothiocyanato group blocked with a blocking agent and an unsaturated bond in the molecule.
  • a monomer having an isocyanato group blocked with the blocking agent or an isothiocyanato group blocked with a blocking agent and an unsaturated bond in the molecule is an isocyanate group or a compound having an isothiocyanato group and an unsaturated bond in the molecule. It can be produced by reacting with a blocking agent.
  • As the unsaturated bond an unsaturated double bond is preferable.
  • Examples of the compound having an unsaturated double bond and an isocyanato group in the molecule include 2-acryloyloxyethyl isocyanate, 2-methacryloyloxyethyl isocyanate, 2- (2'-methacryloyloxyethyl) oxyethyl isocyanate, and the like.
  • Examples of the compound having an unsaturated double bond and an isothiocyanato group in the molecule include 2-acryloyloxyethyl isothiocyanate, 2-methacryloyloxyethyl isothiocyanate, 2- (2′-methacryloyloxyethyl) oxyethyl isothiocyanate, and the like. It is done.
  • the above blocking agents can be suitably used, and an organic solvent, a catalyst, or the like can be added as necessary.
  • Examples of the monomer having an unsaturated double bond and an isocyanato group blocked with a blocking agent in the molecule include 2- [O- [1′-methylpropylideneamino] carboxyamino] ethyl methacrylate, 2- [N -[1 ', 3'-dimethylpyrazolyl] carbonylamino] ethyl-methacrylate, 2- [1'-(3 ', 5'-dimethylpyrazolyl) carbonylamino] ethyl-methacrylate and the like.
  • photopolymerization initiator examples include acetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 4-isopropyl-2-hydroxy-2-methylpropiophenone, 2-hydroxy- 2-methylpropiophenone, 4,4′-bis (diethylamino) benzophenone, benzophenone, methyl (o-benzoyl) benzoate, 1-phenyl-1,2-propanedione-2- (o-ethoxycarbonyl) oxime, -Phenyl-1,2-propanedione-2- (o-benzoyl) oxime, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin octyl ether, benzyl, benzyldimethyl Ketal, benzyl diethyl ketal, carbonyl compounds di
  • the thermal polymerization initiator may be any radical polymerization initiator, such as 2,2′-azobisisobutyronitrile, 2,2′-azobisisovaleronitrile, 2,2 ′. -Azobis (2,4-dimethylvaleronitrile), 4,4'-azobis (4-cyanovaleric acid), 1,1'-azobis (cyclohexanecarbonitrile), 2,2'-azobis (2-methylpropane) ), Azo compounds such as 2,2′-azobis (2-methylpropionamidine) dihydrochloride, ketone peroxides such as methyl ethyl ketone peroxide, methyl isobutyl ketone peroxide, cyclohexanone peroxide, acetylacetone peroxide, isobutyl peroxide Oxide, benzoyl peroxide, 2,4-dichlorobenzoyl peroxy Diacyl peroxides such as o-methylbenzoyl peroxide, lau
  • the polymer compound used in the present invention is a polymerizable monomer other than a polymerizable monomer that is a raw material of the repeating unit represented by the general formula (1) and a polymerizable monomer containing the first functional group. You may add and manufacture at the time of superposition
  • Examples of the other polymerizable monomers include acrylic acid esters and derivatives thereof, methacrylic acid esters and derivatives thereof, styrene and derivatives thereof, methacrylonitrile and derivatives thereof, acrylonitrile and derivatives thereof, vinyl esters of organic carboxylic acids, and the like.
  • the kind of the other polymerizable monomer is appropriately selected according to characteristics required for an insulating layer such as an overcoat insulating layer. From the viewpoint of improving durability and reducing hysteresis, it is preferable to select a monomer having a high molecular density, such as styrene or a styrene derivative, and to harden the film containing the produced polymer compound, and use it in the polymerization. From the viewpoint of improving adhesion to adjacent surfaces such as the gate electrode and the surface of the substrate, select monomers that give flexibility to the produced polymer compounds such as methacrylic acid esters and their derivatives, acrylic acid esters and their derivatives, etc. And preferably used for polymerization. Another preferred form of the polymerizable monomer is a monomer having no active hydrogen-containing group such as an alkyl group.
  • the acrylic acid esters and derivatives thereof may be monofunctional acrylates or polyfunctional acrylates although the amount of use is limited.
  • Acrylic acid esters and derivatives thereof include methyl acrylate, ethyl acrylate, acrylic acid-n-propyl, isopropyl acrylate, acrylic acid-n-butyl, acrylic acid isobutyl, acrylic acid-sec-butyl, hexyl acrylate , Octyl acrylate, 2-ethylhexyl acrylate, decyl acrylate, isobornyl acrylate, cyclohexyl acrylate, phenyl acrylate, benzyl acrylate, 2-hydroxyethyl acrylate, 2-hydroxypropyl acrylate, acrylic acid -3-hydroxypropyl, 2-hydroxybutyl acrylate, 2-hydroxyphenylethyl acrylate, ethylene glycol diacrylate, propylene glycol diacrylate, 1,4-butanediol diacri
  • the methacrylic acid esters and derivatives thereof may be monofunctional methacrylates or polyfunctional methacrylates although the amount of use is limited.
  • Methacrylic acid esters and derivatives thereof include methyl methacrylate, ethyl methacrylate, methacrylic acid-n-propyl, isopropyl methacrylate, methacrylic acid-n-butyl, isobutyl methacrylate, methacrylic acid -Sec-butyl, hexyl methacrylate, octyl methacrylate, 2-ethylhexyl methacrylate, decyl methacrylate, isobornyl methacrylate, cyclohexyl methacrylate, phenyl methacrylate, benzyl methacrylate, methacryl 2-hydroxyethyl acid, 2-hydroxypropyl methacrylate, 3-hydroxypropyl methacrylate, 2-hydroxybutyl methacrylate, 2-hydroxypheny
  • styrene and derivatives thereof include styrene, 2,4-dimethyl- ⁇ -methylstyrene, o-methylstyrene, m-methylstyrene, p-methylstyrene, 2,4-dimethylstyrene, 2,5-dimethylstyrene, 2 , 6-dimethylstyrene, 3,4-dimethylstyrene, 3,5-dimethylstyrene, 2,4,6-trimethylstyrene, 2,4,5-trimethylstyrene, pentamethylstyrene, o-ethylstyrene, m-ethyl Styrene, p-ethylstyrene, o-chlorostyrene, m-chlorostyrene, p-chlorostyrene, o-bromostyrene, m-bromostyrene, p-bromostyrene, p
  • Acrylonitrile and its derivatives include acrylonitrile and the like.
  • Examples of methacrylonitrile and derivatives thereof include methacrylonitrile.
  • vinyl esters of organic carboxylic acids and derivatives thereof include vinyl acetate, vinyl propionate, vinyl butyrate, vinyl benzoate, and divinyl adipate.
  • allyl esters of organic carboxylic acids and derivatives thereof include allyl acetate, allyl benzoate, diallyl adipate, diallyl terephthalate, diallyl isophthalate, and diallyl phthalate.
  • Dialkyl esters of fumaric acid and derivatives thereof include dimethyl fumarate, diethyl fumarate, diisopropyl fumarate, di-sec-butyl fumarate, diisobutyl fumarate, di-n-butyl fumarate, di-2-ethylhexyl fumarate And dibenzyl fumarate.
  • Dialkyl esters of maleic acid and derivatives thereof include dimethyl maleate, diethyl maleate, diisopropyl maleate, di-sec-butyl maleate, diisobutyl maleate, di-n-butyl maleate, di-2-ethylhexyl maleate And dibenzyl maleate.
  • Dialkyl esters of itaconic acid and its derivatives include dimethyl itaconate, diethyl itaconate, diisopropyl itaconate, di-sec-butyl itaconate, diisobutyl itaconate, di-n-butyl itaconate, di-2-ethylhexyl itaconate And dibenzyl itaconate.
  • N-vinylamide derivatives of organic carboxylic acids examples include N-methyl-N-vinylacetamide.
  • maleimide and derivatives thereof include N-phenylmaleimide and N-cyclohexylmaleimide.
  • terminal unsaturated hydrocarbons and derivatives thereof examples include 1-butene, 1-pentene, 1-hexene, 1-octene, vinylcyclohexane, vinyl chloride, and allyl alcohol.
  • organic germanium derivatives examples include allyltrimethylgermanium, allyltriethylgermanium, allyltributylgermanium, trimethylvinylgermanium, triethylvinylgermanium, and the like.
  • Acrylamide and its derivatives include N, N-dimethylacrylamide, N, N-diethylacrylamide, N-acryloylmorpholine, N-hydroxyethylacrylamide, N, N-dimethylaminopropylacrylamide and the like.
  • Acrylamide and its derivatives are particularly preferable because the compatibility of the resin with the active hydrogen compound (B) is improved.
  • acrylic acid alkyl ester methacrylic acid alkyl ester, styrene, acrylonitrile, methacrylonitrile, allyltrimethylgermanium, N, N-diethylaminoacrylate, N, N-diethylacrylamide, 3-chloromethylstyrene, 4-chloro Methyl styrene is preferred.
  • the other polymerizable monomer may be a monomer containing a group capable of dimerization by reacting with an unsaturated double bond in the molecule.
  • Groups that can be dimerized by reacting with each other can form a crosslinked structure inside the insulating layer by bonding two groups.
  • the group that can be dimerized by reacting with each other is preferably a functional group that absorbs light energy or electron energy to cause a dimerization reaction (referred to as “photodimerization reactive group” in the present specification). This is because the heat treatment for cross-linking the insulating layer material takes a short time, and the transistor characteristics are hardly deteriorated in the process of forming the insulating layer.
  • the photodimerization reactive group may also react when the organic thin film transistor insulating layer material is formed by the photopolymerization method. Is preferred.
  • Light preferable for absorption by the photodimerization reactive group is ultraviolet light, for example, light having a wavelength of 360 nm or less, preferably 150 to 300 nm.
  • “Dimerization” here means that two molecules of an organic compound are chemically bonded.
  • the molecules to be bound may be the same or different.
  • the chemical structures of the functional groups in the two molecules may be the same or different.
  • the functional group preferably has a structure and a combination that cause a photodimerization reaction without using a reaction aid such as a catalyst and an initiator. This is because contact with the residue of the reaction aid may cause deterioration of surrounding organic materials.
  • a preferred example of the photodimerization reactive group is an aryl group in which a hydrogen atom is substituted with a halomethyl group, particularly a phenyl group in which a hydrogen atom is substituted with a halomethyl group.
  • the basic skeleton of the side group of the repeating unit is an aryl group or a phenyl group, the affinity for other organic materials such as an organic semiconductor is improved, and it becomes easy to form a flat layer in contact with the exposed surface of the insulating layer. .
  • the amount of the polymerizable monomer used as the raw material of the repeating unit represented by the general formula (1) is adjusted so that the amount of fluorine introduced into the polymer compound (A) becomes an appropriate amount.
  • the amount of fluorine introduced into the polymer compound (A) is preferably 1 to 60% by mass, more preferably 5 to 50% by mass, and further preferably 5 to 40% by mass with respect to the mass of the polymer compound. is there. If the amount of fluorine is less than 1% by mass or more than 60% by mass, the compatibility with the active hydrogen compound (B) may deteriorate and it may be difficult to prepare a resin composition.
  • the charged molar ratio of the polymerizable monomer that is the raw material of the repeating unit represented by the general formula (1) is 20 to 90 mol%, preferably 40 to 80 mol% in all the monomers involved in polymerization. Preferably, it is 50 to 70 mol%.
  • the charged molar ratio of the monomer having an unsaturated double bond and an isocyanato group blocked with a blocking agent or an isothiocyanate group blocked with a blocking agent in the molecule is 2 to 60
  • the charged molar ratio is 70 mol% or less, preferably 50 mol% or less, more preferably 40 mol% or less, in all monomers involved in polymerization. .
  • the charged molar ratio of acrylamide and its derivative exceeds 70 mol%, the compatibility with the active hydrogen compound (B) may be lowered.
  • the charged molar ratio is 50 mol% or less in all the monomers involved in polymerization, Preferably it is 30 mol% or less, More preferably, it is 20 mol% or less.
  • the compatibility with the active hydrogen compound (B) may be lowered.
  • the polymer compound (A) has a weight average molecular weight of preferably 3,000 to 1,000,000, more preferably 5,000 to 500,000, and may be linear, branched or cyclic.
  • the repeating unit represented by the general formula (1) that can be used in the present invention contains two or more first functional groups in the molecule, and the first functional group is an active hydrogen.
  • a polymer compound that is a functional group that generates a second functional group that reacts with electromagnetic waves or heat poly (styrene-co-pentafluorostyrene-co- [2- [O- (1′-methylpropylidene Amino) carboxyamino] ethyl-methacrylate]), poly (styrene-co-pentafluorostyrene-co- [2- [1 '-(3', 5'-dimethylpyrazolyl) carbonylamino] ethyl-methacrylate]), poly (Styrene-co-pentafluorostyrene-co-acrylonitrile-co- [2- [O- (1′-methylpropylideneamino) carboxyamino] ethyl-methacrylate]
  • the active hydrogen compound (B) is, for example, a fluororesin that contains at least two active hydrogens in the molecule.
  • a polymer compound as the active hydrogen compound, advantageous effects such as improvement in solvent resistance can be obtained.
  • a polymer compound containing a fluorine atom called a fluororesin, the content of fluorine atoms in the insulating layer is increased, and advantageous effects such as improvement in water vapor barrier properties can be obtained.
  • a preferred fluororesin is a fluororesin containing a repeating unit represented by the above formula (2) and a repeating unit represented by the above formula (3).
  • the active hydrogen compound (B) may have two or more types of repeating units represented by the formula (2), and may have two or more types of repeating units represented by the formula (3).
  • examples of the alkylene group represented by R 4 include a methylene group, an ethylene group, a propylene group, a butylene group, a pentylene group, a hexylene group, an isopropylene group, an isobutylene group, and a dimethylpropylene group.
  • a specific example of the fluororesin is a compound having a structure in which two or more repeating units represented by the formula (3) are bonded to a polymer (polymer) structure.
  • a fluororesin includes a monomer compound (monomer) that is a raw material of the repeating unit represented by the formula (2), an active hydrogen-containing group and an unsaturated bond that are a raw material of the repeating unit represented by the formula (3). It can be obtained by copolymerizing a monomer compound (monomer) contained in the molecule or by copolymerizing with another copolymerizable compound to form a polymer. In the polymerization, a photopolymerization initiator or a thermal polymerization initiator may be applied. In addition, the thing similar to what was mentioned above is applicable as a polymerizable monomer, a photoinitiator, and a thermal polymerization initiator.
  • Examples of the monomer that is a raw material of the repeating unit represented by the formula (2) include trifluoroethylene, trifluoromethylethylene, chlorotrifluoroethylene, and the like.
  • Examples of the monomer having an active hydrogen-containing group and an unsaturated bond as a raw material of the repeating unit represented by the formula (3) in the molecule include hydroxymethyl vinyl ether, 2-hydroxyethyl vinyl ether, 3-hydroxypropyl vinyl ether, 4 -Hydroxybutyl vinyl ether and the like.
  • copolymerizable compounds include methyl vinyl ether, ethyl vinyl ether, propyl vinyl ether, butyl vinyl ether and the like.
  • the polystyrene equivalent weight average molecular weight of the fluororesin is preferably 1,000 to 1,000,000, and more preferably 3,000 to 500,000. Thereby, the effect that the flatness and uniformity of the insulating layer are improved can be obtained.
  • the commercially available fluororesin may be used.
  • Specific examples of commercially available products include “Lumiflon LF200F” (trade name) manufactured by Asahi Glass Co., Ltd. and “Lumiflon LF906N” (trade name) manufactured by Asahi Glass Co., Ltd.
  • Organic Thin Film Transistor Insulating Resin Composition Polymer composition (A) and active hydrogen compound (B) are mixed to obtain the organic thin film transistor insulating layer resin composition of the present invention.
  • the mixing ratio of the two is such that the first functional group of the polymer compound (A) and the active hydrogen-containing group of the active hydrogen compound (B) are in a molar ratio, preferably 60/100 to 150/100, more preferably 70. / 100 to 120/100, more preferably 90/100 to 110/100.
  • this ratio is less than 60/100, the active hydrogen becomes excessive, and when it exceeds 150/100, the functional group that reacts with the active hydrogen becomes excessive, and the effect of suppressing deterioration of transistor characteristics may be reduced.
  • the organic thin film transistor insulating layer resin composition may contain a solvent for mixing and viscosity adjustment, an additive usually used in combination with a crosslinking agent when the resin is crosslinked.
  • Solvents used include ether solvents such as tetrahydrofuran, aliphatic hydrocarbon solvents such as hexane, alicyclic hydrocarbon solvents such as cyclohexane, unsaturated hydrocarbon solvents such as pentene, and aromatic hydrocarbons such as xylene.
  • Solvents such as 2-heptanone, acetate solvents such as propylene glycol monomethyl ether acetate and butyl acetate, halogen solvents such as chloroform, fluorine solvents such as 2,3,4,5,6-pentafluorotoluene It is a solvent or a mixed solvent thereof.
  • the catalyst for promoting a crosslinking reaction, a leveling agent, a viscosity modifier, etc. can be used as an additive.
  • the organic thin film transistor insulating layer resin composition of the present invention includes an organic thin film transistor overcoat insulating layer resin composition used for forming an overcoat insulating layer and an organic thin film transistor gate insulating layer resin composition used for forming a gate insulating layer. Thing etc. are mentioned.
  • the overcoat insulating layer formed using the resin composition for an organic thin film transistor overcoat insulating layer of the present invention is excellent in insulation and airtightness. Therefore, the organic thin film transistor having the overcoat insulating layer can be stably driven even in the atmosphere.
  • the gate insulating layer formed using the resin composition for an organic thin film transistor gate insulating layer of the present invention is formed when an organic film is formed on the gate insulating layer by a coating method because of the liquid repellency and adhesion of the fluororesin. A flat and uniform organic film can be formed. Therefore, the organic thin film transistor having the gate insulating layer has excellent transistor characteristics.
  • FIG. 1 is a schematic cross-sectional view showing the structure of a bottom gate top contact type organic thin film transistor which is an embodiment of the present invention.
  • the organic thin film transistor includes a substrate 1, a gate electrode 2 formed on the substrate 1, a gate insulating layer 3 formed on the gate electrode 2, an organic semiconductor layer 4 formed on the gate insulating layer 3, A source electrode 5 and a drain electrode 6 formed on the organic semiconductor layer 4 with a channel portion interposed therebetween, and an overcoat insulating layer 7 covering the entire element are provided.
  • a bottom gate top contact type organic thin film transistor includes, for example, a gate electrode formed on a substrate, a gate insulating layer formed on the gate electrode, an organic semiconductor layer formed on the gate insulating layer, and a source electrode formed on the organic semiconductor layer. It can be manufactured by forming a drain electrode and, if necessary, an overcoat insulating layer.
  • FIG. 2 is a schematic cross-sectional view showing the structure of a bottom gate bottom contact type organic thin film transistor which is an embodiment of the present invention.
  • a substrate 1 a gate electrode 2 formed on the substrate 1, a gate insulating layer 3 formed on the gate electrode 2, and a channel portion on the gate insulating layer 3 are formed.
  • a source electrode 5 and a drain electrode 6, an organic semiconductor layer 4 formed on the source electrode 5 and the drain electrode 6, and an overcoat insulating layer 7 covering the entire element are provided.
  • a bottom gate bottom contact type organic thin film transistor includes, for example, a gate electrode formed on a substrate, a gate insulating layer formed on the gate electrode, a source electrode and a drain electrode formed on the gate insulating layer, and a source electrode and a drain electrode. It can be manufactured by forming an organic semiconductor layer thereon and, if necessary, forming an overcoat insulating layer.
  • An organic thin film transistor insulating layer such as a gate insulating layer and an overcoat insulating layer is formed by applying a liquid containing the resin composition for an organic thin film transistor insulating layer of the present invention to a base material, and forming the applied layer.
  • the “substrate” refers to a constituent member of the organic thin film transistor on which the organic thin film transistor insulating layer is disposed.
  • the gate insulating layer is formed by adding a solvent or the like to the resin composition for an overcoat insulating layer of the present invention to prepare an insulating layer coating solution, and this is used to form a gate electrode on the substrate.
  • the insulating layer coating solution is applied onto the substrate so as to cover the gate electrode, and the applied solution is dried and cured.
  • a silicon substrate, a glass substrate, a plastic substrate, or the like is used as the substrate.
  • the overcoat insulating layer is formed by applying the insulating layer coating liquid onto a substrate on which a gate electrode, a gate insulating layer, a source electrode, a drain electrode, and an organic semiconductor layer are formed on a substrate.
  • the applied liquid is dried and cured.
  • the organic solvent used in the insulating layer coating solution is not particularly limited as long as it dissolves the polymer compound and the crosslinking agent, but is preferably an organic solvent having a boiling point of 100 ° C. to 200 ° C. at normal pressure. is there.
  • the organic solvent include 2-heptanone, propylene glycol monomethyl ether acetate, 2,3,4,5,6-pentafluorotoluene, octafluorotoluene and the like.
  • a leveling agent, a surfactant, a curing catalyst, and the like can be added to the insulating layer coating solution as necessary.
  • the insulating layer coating solution can be applied onto the organic semiconductor compound or the gate electrode by a known spin coat, die coater, screen printing, ink jet or the like.
  • the formed coating layer is dried as necessary. Drying here means removing the solvent of the applied resin composition.
  • the dried coating layer is then cured.
  • Curing means that the resin composition for an organic thin film transistor insulating layer is crosslinked. Crosslinking of the resin composition for transistor insulating layers is performed, for example, by applying electromagnetic waves or heat to the coating layer. Then, the second functional group is generated from the first functional group of the polymer compound (A) and reacts with the active hydrogen-containing group of the active hydrogen compound (B).
  • the coating layer is cured by applying heat to the coating layer and irradiating an electromagnetic wave or an electron beam.
  • Application of heat and irradiation with electromagnetic waves or electron beams may be performed in the reverse order.
  • the photodimerization reactive group also reacts in addition to the second functional group and the active hydrogen-containing group.
  • the crosslink density of the insulating layer is improved, polarization during voltage application is further suppressed, and the absolute value and hysteresis of the threshold voltage of the organic thin film transistor are reduced.
  • the coating layer When heat is applied to the coating layer, the coating layer is heated to a temperature of about 80 to 250 ° C., preferably about 100 to 230 ° C., and maintained for about 5 to 120 minutes, preferably about 10 to 60 minutes. If the heating temperature is too low or the heating time is too short, the insulating layer is not sufficiently crosslinked, and if the heating temperature is too high or the heating time is too long, the insulating layer may be damaged.
  • the irradiation conditions are adjusted in consideration of the degree of crosslinking and damage of the insulating layer.
  • the application condition is adjusted in consideration of the cross-linking of the insulating layer and the degree of damage.
  • the wavelength of the electromagnetic wave to be irradiated is preferably 450 nm or less, more preferably 150 to 410 nm.
  • the organic thin film transistor insulating layer material may be insufficiently crosslinked.
  • electromagnetic waves ultraviolet rays are preferable.
  • Irradiation with ultraviolet rays can be performed using, for example, an exposure apparatus used for manufacturing a semiconductor or a UV lamp used for curing a UV curable resin.
  • the electron beam irradiation can be performed using, for example, a micro electron beam irradiation tube.
  • Heating can be performed using a heater, an oven, or the like. Other irradiation conditions and heating conditions are appropriately determined according to the type and amount of the addition polymerization reactive group and the photopolymerization initiator used.
  • the substrate 1, the gate electrode 2, the source electrode 5, the drain electrode 6, and the organic semiconductor layer 4 that constitute the organic thin film transistor may be formed of materials and methods that are usually used.
  • a resin or plastic plate or film, a glass plate, a silicon plate, or the like is used as the substrate material.
  • the material of the electrode chromium, gold, silver, aluminum or the like is used, and it is formed by a known method such as a vapor deposition method, a sputtering method, a printing method, or an ink jet method.
  • organic semiconductor compounds As organic semiconductor compounds, ⁇ -conjugated polymers are widely used. For example, polypyrroles, polythiophenes, polyanilines, polyallylamines, fluorenes, polycarbazoles, polyindoles, poly (P-phenylene vinylene) s, etc. are used. be able to.
  • low-molecular substances having solubility in organic solvents for example, polycyclic aromatic derivatives such as pentacene, phthalocyanine derivatives, perylene derivatives, tetrathiafulvalene derivatives, tetracyanoquinodimethane derivatives, fullerenes, carbon nanotubes Etc. can be used. Specific examples include condensates of 9,9-di-n-octylfluorene-2,7-di (ethylene boronate) and 5,5′-dibromo-2,2′-bithiophene. .
  • the formation of the organic semiconductor layer is performed, for example, by adding a solvent or the like to the organic semiconductor compound to prepare an organic semiconductor coating solution, and applying and drying this on the gate insulating layer.
  • the solvent used is not particularly limited as long as it dissolves or disperses the organic semiconductor, but preferably has a boiling point of 50 ° C. to 200 ° C. at normal pressure.
  • the solvent include chloroform, toluene, anisole, 2-heptanone, propylene glycol monomethyl ether acetate and the like.
  • the organic semiconductor coating liquid can be applied onto the gate insulating layer by a known spin coating, die coater, screen printing, ink jet, or the like, similarly to the insulating layer coating liquid.
  • the display member which has an organic thin-film transistor suitably can be produced using the organic thin-film transistor of the present invention.
  • a display member having the organic thin film transistor a display including the display member can be suitably produced.
  • Synthesis example 1 (Synthesis of polymer compound 1) Styrene (Wako Pure Chemical Industries, Ltd.) 2.60 g, 2,3,4,5,6-pentafluorostyrene (Aldrich) 9.71 g, 2- [O- [1′-methylpropylideneamino] carboxyamino] ethyl -2.00 g of methacrylate (made by Showa Denko, trade name “Karenz MOI-BM”), 0.07 g of 2,2′-azobis (2-methylpropionitrile), 3.59 g of octafluorotoluene (made by Aldrich),
  • the polymer compound 1 represented by the following formula was obtained by putting it in a 50 ml pressure vessel (made by Ace), bubbling with argon, sealing up, and polymerizing in an oil bath at 60 ° C.
  • Synthesis example 2 (Synthesis of polymer compound 2) 1.12 g of styrene (manufactured by Wako Pure Chemical Industries), 6.26 g of 2,3,4,5,6-pentafluorostyrene (manufactured by Aldrich), 0.68 g of diethylacrylamide (manufactured by Kojin Co., Ltd.), 2- [O- [1'-Methylpropylideneamino] carboxyamino] ethyl-methacrylate (produced by Showa Denko, trade name "Karenz MOI-BM”) 1.29 g, 2,2'-azobis (2-methylpropionitrile) 0.05 g , 2,3,4,5,6-pentafluorotoluene (Aldrich) (14.10 g) was placed in a 50 ml pressure vessel (Ace), bubbled with argon, sealed and sealed in an oil bath at 60 ° C.
  • Synthesis example 3 (Synthesis of polymer compound 3) Styrene (manufactured by Wako Pure Chemical Industries) 0.56 g, 2,3,4,5,6-pentafluorostyrene (manufactured by Aldrich) 6.26 g, diethylacrylamide (manufactured by Kojin Co., Ltd.) 1.37 g, 2- [O- [1'-Methylpropylideneamino] carboxyamino] ethyl-methacrylate (produced by Showa Denko, trade name "Karenz MOI-BM”) 1.29 g, 2,2'-azobis (2-methylpropionitrile) 0.05 g , 2,3,4,5,6-pentafluorotoluene (Aldrich) 14.29 g was put in a 50 ml pressure vessel (Ace), bubbled with argon, sealed, and placed in an oil bath at 60 ° C.
  • Synthesis example 4 (Synthesis of polymer compound 4) 2,3,4,5,6-pentafluorostyrene (manufactured by Aldrich) 6.26 g, diethylacrylamide (manufactured by Kojin Co., Ltd.) 2.05 g, 2- [O- [1′-methylpropylideneamino] carboxyamino ] 1.29 g of ethyl-methacrylate (made by Showa Denko, trade name “Karenz MOI-BM”), 0.05 g of 2,2′-azobis (2-methylpropionitrile), 2,3,4,5,6- 14.47 g of pentafluorotoluene (manufactured by Aldrich) is put in a 50 ml pressure vessel (manufactured by ACE), bubbled with argon, sealed, and polymerized in an oil bath at 60 ° C. for 24 hours, and expressed by the following formula: A 2,3,4,5,6-pentafluoroto
  • Synthesis example 5 (Synthesis of polymer compound 5) 2,3,4,5,6-pentafluorostyrene (Aldrich) 2.00 g, 2,2′-azobis (2-methylpropionitrile) 0.01 g, 2,3,4,5,6-penta Fluorotoluene (Aldrich) 3.00 g was put in a 50 ml pressure vessel (Ace), bubbled with argon, sealed, and polymerized in an oil bath at 60 ° C. for 24 hours. A 2,3,4,5,6-pentafluorotoluene solution of molecular compound 5 was obtained.
  • n in the following formula represents the degree of polymerization.
  • the polymer compound 6 had a weight average molecular weight in terms of polystyrene of 2.6 ⁇ 10 5 .
  • n in the following formula represents the degree of polymerization.
  • Synthesis example 7 (Synthesis of polymer compound 7) 2,3,4,5,6-pentafluorostyrene (manufactured by Aldrich) 5.00 g, diethylacrylamide (manufactured by Kojin Co., Ltd.) 2.62 g, 2- [O- [1′-methylpropylideneamino] carboxyamino ] 1.24 g of ethyl-methacrylate (made by Showa Denko, trade name “Karenz MOI-BM”), 0.04 g of 2,2′-azobis (2-methylpropionitrile), 2,3,4,5,6- 13.35 g of pentafluorotoluene (manufactured by Aldrich) is placed in a 50 ml pressure vessel (manufactured by ACE), bubbled with argon, sealed, polymerized in an oil bath at 60 ° C. for 24 hours, and expressed by the following formula: A 2,3,4,5,6-pentafluorotol
  • Synthesis Example 8 (Synthesis of polymer compound 8) 2,3,4,5,6-pentafluorostyrene (manufactured by Aldrich) 5.00 g, diethylacrylamide (manufactured by Kojin Co., Ltd.) 1.97 g, 2- [O- (1′-methylpropylideneamino] carboxyamino ] 2.47 g of ethyl-methacrylate (made by Showa Denko, trade name “Karenz MOI-BM”), 0.05 g of 2,2′-azobis (2-methylpropionitrile), 2,3,4,5,6- 14.23 g of pentafluorotoluene (manufactured by Aldrich) is placed in a 50 ml pressure vessel (manufactured by ACE), bubbled with argon, sealed, polymerized in an oil bath at 60 ° C. for 24 hours, and expressed by the following formula: A 2,3,4,5,6-pentafluorotolu
  • Synthesis Example 10 (Synthesis of polymer compound 10) 2.60 g of styrene (manufactured by Wako Pure Chemical Industries), 5.00 g of 2,3,4,5,6-pentafluorostyrene (manufactured by Aldrich), chloromethylstyrene (mixture of 3- and 4-isomers by Aldrich) 79 g, diethyl acrylamide (manufactured by Kojin Co., Ltd.) 1.97 g, 2- [O- [1′-methylpropylideneamino] carboxyamino] ethyl-methacrylate (manufactured by Showa Denko, trade name “Karenz MOI-BM”) 1 .24 g, 2,2′-azobis (2-methylpropionitrile) 0.04 g, 2,3,4,5,6-pentafluorotoluene (Aldrich) 13.55 g, 50 ml pressure vessel (Ace)
  • Example 1 (Production of field-effect organic thin-film transistors) Asahi Glass's fluororesin “Lumiflon LF200F” (trade name) of 5.00 g of 2,3,4,5,6-pentafluorotoluene dissolved in 7.5 g of 2,3,4,5, 10 ml sample bottle of 1.00 g of 6-pentafluorotoluene solution, 2.76 g of octafluorotoluene solution of polymer compound 1 obtained in Synthesis Example 1 and 3.00 g of 2,3,4,5,6-pentafluorotoluene And dissolved by stirring. The obtained uniform solution was filtered through a membrane filter having a pore diameter of 0.45 ⁇ m to prepare an overcoat insulating layer coating solution containing a resin composition for an organic thin film transistor insulating layer.
  • “Lumiflon LF200F” (trade name) is a polymer compound having a repeating unit represented by the formula (2-a) and a repeating unit represented by the formula (3-a).
  • X represents a fluorine atom, a chlorine atom or a trifluoromethyl group.
  • R 4 represents an alkylene group.
  • the polymer compound 6 was dissolved in xylene as a solvent to prepare a solution (organic semiconductor composition) having a concentration of 0.5% by weight, and this was filtered through a membrane filter to prepare a coating solution.
  • the obtained coating solution of the polymer compound 6 is applied on a bottom gate bottom contact element (manufactured by Kyodo Inter) by a spin coating method and baked in nitrogen at 200 ° C. for 10 minutes to have an active layer having a thickness of about 60 nm. Formed.
  • the overcoat insulating layer coating solution is applied onto the obtained active layer by a spin coating method and baked at 200 ° C. for 30 minutes in nitrogen to form an overcoat insulating layer having a thickness of about 6 ⁇ m.
  • a field effect organic thin film transistor was fabricated and the transistor characteristics were measured in the atmosphere.
  • Example 2 (Production of field-effect organic thin-film transistors) 2.40 g of 2,3,4,5,6-pentafluorotoluene solution of polymer compound 2 is used instead of octafluorotoluene solution of polymer compound 1, and 2,3,4,5,6-penta added
  • a field effect organic thin film transistor was prepared in the same manner as in Example 1 except that the weight of fluorotoluene was changed to 1.50 g, and the transistor characteristics were measured in the atmosphere.
  • the thickness of the overcoat insulating layer was about 6 ⁇ m.
  • Example 3 (Production of field-effect organic thin-film transistors)
  • octafluorotoluene solution of polymer compound 1 1.41 g of 2,3,4,5,6-pentafluorotoluene solution of polymer compound 3 is used, and 2,3,4,5,6-penta added.
  • a field effect organic thin film transistor was prepared in the same manner as in Example 1 except that the weight of fluorotoluene was changed to 1.50 g, and the transistor characteristics were measured in the atmosphere.
  • the thickness of the overcoat insulating layer was about 6 ⁇ m.
  • Example 4 (Production of field-effect organic thin-film transistors)
  • octafluorotoluene solution of polymer compound 1 1.43 g of 2,3,4,5,6-pentafluorotoluene solution of polymer compound 4 is added, and 2,3,4,5,6-penta added.
  • a field effect organic thin film transistor was prepared in the same manner as in Example 1 except that the weight of fluorotoluene was changed to 1.50 g, and the transistor characteristics were measured in the atmosphere.
  • the thickness of the overcoat insulating layer was about 6 ⁇ m.
  • Example 5 (Production of field-effect organic thin-film transistors) 1.38 g of 2,3,4,5,6-pentafluorotoluene solution of polymer compound 7 is used instead of octafluorotoluene solution of polymer compound 1, and 2,3,4,5,6-penta added
  • a field effect organic thin film transistor was prepared in the same manner as in Example 1 except that the weight of fluorotoluene was changed to 2.00 g, and the transistor characteristics were measured in the air.
  • the thickness of the overcoat insulating layer was about 6 ⁇ m.
  • the field effect organic thin film transistor thus fabricated has the transistor characteristics of a vacuum probe (BCT22MDC-5-5) under the condition that the gate voltage Vg is changed to 20 to -40V and the source-drain voltage Vsd is changed to 0 to -40V.
  • HT-SCU; Nagase Electronic Equipment Table 1 shows the results measured using s Service Co., LTD.
  • Example 6 (Production of field-effect organic thin-film transistors) 0.40 g of Lumiflon 2-heptanone solution prepared by dissolving 10.00 g of a fluororesin “Lumiflon LF906N” (trade name) manufactured by Asahi Glass Co., Ltd. in 4.28 g of the polymer compound 4 obtained in Synthesis Example 4 Of 2,3,4,5,6-pentafluorotoluene in an amount of 2.63 g and 1.50 g of 2-heptanone were placed in a 10 ml sample bottle and dissolved by stirring. The obtained uniform solution was filtered through a membrane filter having a pore diameter of 0.45 ⁇ m to prepare an overcoat insulating layer coating solution containing a resin composition for an organic thin film transistor insulating layer.
  • “Lumiflon LF906N” (trade name) is a polymer compound having a repeating unit represented by the formula (2-a) and a repeating unit represented by the formula (3-a).
  • X represents a fluorine atom, a chlorine atom or a trifluoromethyl group.
  • R 4 represents an alkylene group.
  • the polymer compound 6 was dissolved in xylene as a solvent to prepare a solution (organic semiconductor composition) having a concentration of 0.5% by weight, and this was filtered through a membrane filter to prepare a coating solution.
  • the obtained coating solution of the polymer compound 6 is applied on a bottom gate bottom contact element (manufactured by Kyodo Inter) by a spin coating method and baked in nitrogen at 200 ° C. for 10 minutes to have an active layer having a thickness of about 60 nm. Formed.
  • the overcoat insulating layer coating solution is applied onto the obtained active layer by a spin coating method and baked at 200 ° C. for 30 minutes in nitrogen to form an overcoat insulating layer, thereby producing a field effect organic thin film transistor.
  • the transistor characteristics were measured in the atmosphere.
  • the thickness of the overcoat insulating layer was 4.9 ⁇ m.
  • Example 7 (Production of field-effect organic thin-film transistors) Except that 2.54 g of 2,3,4,5,6-pentafluorotoluene solution of polymer compound 7 was used instead of 2,3,4,5,6-pentafluorotoluene solution of polymer compound 4, this was carried out.
  • a field effect organic thin film transistor was prepared in the same manner as in Example 6, and the transistor characteristics were measured in the atmosphere.
  • the thickness of the overcoat insulating layer was 5.0 ⁇ m.
  • Example 8 (Production of field-effect organic thin-film transistors)
  • a field effect organic thin film transistor was prepared in the same manner as in Example 6 except that 2.03 g of the 2,3,4,5,6-pentafluorotoluene solution of No. 8 was used, and the transistor characteristics were measured in the atmosphere.
  • the thickness of the overcoat insulating layer was 5.1 ⁇ m.
  • Example 9 (Production of field-effect organic thin-film transistors) 2.65 g of the 2,3,4,5,6-pentafluorotoluene solution of the polymer compound 9 obtained in Synthesis Example 9 instead of the 2,3,4,5,6-pentafluorotoluene solution of the polymer compound 4 A field effect organic thin film transistor was produced in the same manner as in Example 6 except that the transistor characteristics were measured in the air. The thickness of the overcoat insulating layer was 2.9 ⁇ m.
  • Example 10 (Production of field-effect organic thin-film transistors) “Lumiflon LF200F” (trade name, manufactured by Asahi Glass Co., Ltd.) 10.00 g of Lumiflon LF200F dissolved in 1,5.00 g of 2,3,4,5,6-pentafluorotoluene, 2,3,4,5, 2.00 g of 6-pentafluorotoluene solution, 2.80 g of 2,3,4,5,6-pentafluorotoluene solution of polymer compound 10 obtained in Synthesis Example 10, 2,3,4,5,6-penta 3.50 g of fluorotoluene was placed in a 20 ml sample bottle and dissolved by stirring. The obtained uniform solution was filtered through a membrane filter having a pore diameter of 0.45 ⁇ m to prepare an overcoat insulating layer coating solution containing a resin composition for an organic thin film transistor insulating layer.
  • “Lumiflon LF200F” (trade name) is a polymer compound having a repeating unit represented by the formula (2-a) and a repeating unit represented by the formula (3-a).
  • X represents a fluorine atom, a chlorine atom or a trifluoromethyl group.
  • R 4 represents an alkylene group.
  • the polymer compound 6 was dissolved in xylene as a solvent to prepare a solution (organic semiconductor composition) having a concentration of 0.5% by weight, and this was filtered through a membrane filter to prepare a coating solution.
  • the obtained coating solution of the polymer compound 6 is applied on a bottom gate bottom contact element (manufactured by Kyodo Inter) by a spin coating method and baked in nitrogen at 200 ° C. for 10 minutes to have an active layer having a thickness of about 60 nm. Formed.
  • the overcoat insulating layer coating solution was applied onto the obtained active layer by a spin coating method and baked at 200 ° C. for 30 minutes in nitrogen, and then a UV ozone irradiation apparatus (manufactured by Samco, Model UV-1)
  • the overcoat insulating layer was formed by UV irradiation in an inert gas for 1 minute to produce a field effect organic thin film transistor, and the transistor characteristics were measured in the atmosphere.
  • the thickness of the overcoat insulating layer was about 6 ⁇ m.
  • the field effect organic thin film transistor thus fabricated has a transistor characteristic of a vacuum probe (“BCT22MDC-5” under the condition that the gate voltage Vg is changed to 20 to ⁇ 40 V and the source-drain voltage Vsd is changed to 0 to ⁇ 40 V.
  • Table 1 shows the results of measurement using “HT-SCU” (trade name); manufactured by Nagase Electronic Equipments Service Co. LTD.
  • Comparative Example 1 (Production of field-effect organic thin-film transistors) Instead of the octafluorotoluene solution of polymer compound 1, 1.00 g of 2,3,4,5,6-pentafluorotoluene solution of polymer compound 5 is used, and 2,3,4,5,6-penta added.
  • a field effect organic thin film transistor was prepared in the same manner as in Example 1 except that the weight of fluorotoluene was 1.00 g and “Lumiflon LF200F” (trade name) was not used, and the transistor characteristics were measured in the atmosphere.
  • the thickness of the overcoat insulating layer was about 6 ⁇ m.
  • the absolute value of the threshold voltage was 40 V or more, and the device was not driven under the conditions where the gate voltage Vg was changed to 20 to ⁇ 40 V and the source-drain voltage Vsd was changed to 0 to ⁇ 40 V.

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
  • Polyurethanes Or Polyureas (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)

Abstract

L'invention concerne une composition de résine à utiliser dans une couche isolante de transistor organique en couche mince, qui permet de fabriquer un transistor organique en couche mince présentant une faible hystérésis et une tension de seuil de faible valeur absolue. Ladite composition de résine contient (A) un composé macromoléculaire comportant un motif répétitif portant un groupe qui contient un atome de fluor, et (B) un composé à hydrogène actif qui est une résine fluorée.
PCT/JP2011/057938 2010-04-01 2011-03-30 Composition de résine pour utilisation dans une couche isolante de transistor organique en couche mince, couche isolante de protection, et transistor organique en couche mince WO2011125691A1 (fr)

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JPWO2015190294A1 (ja) * 2014-06-09 2017-05-25 旭硝子株式会社 撥インク剤、ネガ型感光性樹脂組成物、隔壁および光学素子
WO2017141932A1 (fr) * 2016-02-18 2017-08-24 住友化学株式会社 Composé polymère, composition, couche isolante et transistor à couches minces organiques

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JP2013149861A (ja) * 2012-01-20 2013-08-01 Sumitomo Chemical Co Ltd 有機薄膜トランジスタ絶縁層材料
CN104105726B (zh) * 2012-02-15 2017-05-31 默克专利股份有限公司 用于有机电子器件的平坦化层
JP5980522B2 (ja) * 2012-02-17 2016-08-31 住友化学株式会社 有機薄膜トランジスタ絶縁層材料
JP6056443B2 (ja) * 2012-12-12 2017-01-11 住友化学株式会社 絶縁層材料及び該絶縁層材料を用いて形成した有機薄膜トランジスタ
TWI569327B (zh) * 2015-07-03 2017-02-01 友達光電股份有限公司 薄膜電晶體與其製作方法
WO2017141933A1 (fr) * 2016-02-18 2017-08-24 住友化学株式会社 Composé polymère, composition et transistor à couche mince organique
TWI629797B (zh) 2017-05-09 2018-07-11 友達光電股份有限公司 薄膜電晶體及其光電裝置
CN110240671B (zh) * 2018-03-09 2021-11-19 浙江省化工研究院有限公司 一种氟树脂及其制备方法
JP7211269B2 (ja) * 2019-06-07 2023-01-24 Jnc株式会社 樹脂組成物、有機薄膜積層構造および有機薄膜トランジスタ

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JPH03290412A (ja) * 1990-04-07 1991-12-20 Hitachi Ltd 含フッ素反応性重合体およびその製法
WO2009121672A1 (fr) * 2008-04-03 2009-10-08 Cambridge Display Technology Limited Transistors organiques à film mince
WO2010024238A1 (fr) * 2008-08-28 2010-03-04 住友化学株式会社 Composition de résine, couche d’isolation de grille et transistor à couches minces organiques

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JPH03290412A (ja) * 1990-04-07 1991-12-20 Hitachi Ltd 含フッ素反応性重合体およびその製法
WO2009121672A1 (fr) * 2008-04-03 2009-10-08 Cambridge Display Technology Limited Transistors organiques à film mince
WO2010024238A1 (fr) * 2008-08-28 2010-03-04 住友化学株式会社 Composition de résine, couche d’isolation de grille et transistor à couches minces organiques

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Publication number Priority date Publication date Assignee Title
JPWO2015190294A1 (ja) * 2014-06-09 2017-05-25 旭硝子株式会社 撥インク剤、ネガ型感光性樹脂組成物、隔壁および光学素子
WO2017141932A1 (fr) * 2016-02-18 2017-08-24 住友化学株式会社 Composé polymère, composition, couche isolante et transistor à couches minces organiques

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