WO2011125690A1 - Composition contenant un solvant organique fluoré pour utilisation dans une couche isolante de transistor organique en couche mince - Google Patents

Composition contenant un solvant organique fluoré pour utilisation dans une couche isolante de transistor organique en couche mince Download PDF

Info

Publication number
WO2011125690A1
WO2011125690A1 PCT/JP2011/057937 JP2011057937W WO2011125690A1 WO 2011125690 A1 WO2011125690 A1 WO 2011125690A1 JP 2011057937 W JP2011057937 W JP 2011057937W WO 2011125690 A1 WO2011125690 A1 WO 2011125690A1
Authority
WO
WIPO (PCT)
Prior art keywords
group
film transistor
insulating layer
organic thin
thin film
Prior art date
Application number
PCT/JP2011/057937
Other languages
English (en)
Japanese (ja)
Inventor
公 矢作
Original Assignee
住友化学株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 住友化学株式会社 filed Critical 住友化学株式会社
Priority to US13/064,685 priority Critical patent/US8733199B2/en
Publication of WO2011125690A1 publication Critical patent/WO2011125690A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/88—Passivation; Containers; Encapsulations

Definitions

  • the present invention relates to a composition for forming an insulating layer, and particularly to a composition for forming an insulating layer in an organic thin film transistor.
  • An organic thin film transistor is more flexible than an inorganic semiconductor and can be manufactured by a low-temperature process. Therefore, a plastic substrate or a film can be used as a substrate, and the device is lightweight and hardly broken.
  • an element can be manufactured by application of a solution containing an organic material or film formation using a printing method, and a large number of elements can be manufactured over a large substrate at low cost.
  • materials having different molecular structures are used for studying, elements having a wide range of characteristics can be manufactured.
  • a voltage applied to a gate electrode acts on a semiconductor layer through a gate insulating layer to control on / off of a drain current. Therefore, a gate insulating layer is formed between the gate electrode and the semiconductor layer.
  • Organic semiconductor compounds used in field effect organic thin film transistors are easily affected by the environment such as humidity and oxygen, and the transistor characteristics are likely to deteriorate over time due to humidity, oxygen, and the like.
  • an overcoat layer that is an insulating layer covering the entire device structure is formed to protect the organic semiconductor compound from contact with the outside air. It is essential.
  • the organic semiconductor compound is coated with a gate insulating layer which is an insulating layer, and is protected from contact with outside air.
  • the composition for the organic thin film transistor insulating layer includes a dielectric breakdown strength when a thin film is formed, and an organic semiconductor for forming a good interface with the organic semiconductor. Characteristics such as affinity and flatness of the film surface forming the interface with the semiconductor are required.
  • Non-patent Document 1 it is known to form an insulating layer of an organic thin film transistor using a composition containing polyvinylphenol and N, N-dimethylformamide.
  • the organic thin film transistor in which the organic semiconductor material is protected from contact with the outside air by the insulating layer formed using the above composition has a problem that the absolute value of the threshold voltage (Vth) is large.
  • An object of the present invention is to provide a composition for an organic thin film transistor insulating layer capable of producing an organic thin film transistor having a small absolute value of a threshold voltage.
  • the present invention has the formula (A)
  • R 1 represents a hydrogen atom or a methyl group.
  • R represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms which does not have a fluorine atom.
  • Rf represents a fluorine atom or a monovalent organic group having 1 to 20 carbon atoms having a fluorine atom.
  • Raa represents a divalent organic group having 1 to 20 carbon atoms. A hydrogen atom in the divalent organic group may be substituted with a fluorine atom.
  • a represents an integer of 0 to 20, and b represents an integer of 1 to 5. When there are a plurality of Raa, they may be the same or different. When there are a plurality of R, they may be the same or different.
  • the repeating unit represented by Formula (1) is contained in the polymer compound in an amount of 30 mol% or more based on the total amount of repeating units contained in the polymer compound.
  • the organic compound having a fluorine atom is an organic compound composed of carbon, hydrogen and fluorine.
  • the organic compound having a fluorine atom is an aromatic compound having a fluorine atom.
  • the present invention also includes a step of applying the organic thin film transistor insulating layer composition to the surface of a substrate to form a coating layer; and a step of drying a solvent from the coating layer; And a method for forming an organic thin film transistor insulating layer including the same.
  • the present invention also provides an organic thin film transistor having a source electrode, a drain electrode, a gate electrode, an organic semiconductor layer, and an insulating layer formed using the organic thin film transistor insulating layer composition.
  • the insulating layer is an overcoat layer or a gate insulating layer.
  • the present invention also provides a display member including the organic thin film transistor.
  • the present invention also provides a display including the organic thin film transistor.
  • An organic thin film transistor in which an organic semiconductor compound is protected from contact with outside air by an insulating layer formed using the composition for an organic thin film transistor insulating layer of the present invention is extremely useful because the absolute value and hysteresis of the threshold voltage are reduced. It is.
  • the “polymer compound” refers to a compound having a structure in which a plurality of the same structural units are repeated in the molecule, and includes a so-called dimer.
  • the “low molecular compound” means a compound that does not have the same structural unit repeatedly in the molecule.
  • composition for an organic thin film transistor insulating layer of the present invention contains a polymer compound (A) having a fluorine atom and an organic compound (B) having a fluorine atom as a solvent.
  • the polymer compound (A) has a repeating unit containing a fluorine atom represented by the formula (1).
  • R 1 represents a hydrogen atom or a methyl group.
  • R ⁇ 1 > is a hydrogen atom.
  • Raa represents a divalent organic group having 1 to 20 carbon atoms. A hydrogen atom in the divalent organic group may be substituted with a fluorine atom.
  • a represents an integer of 0 to 20. In one certain form, a is 0.
  • R represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms having no fluorine atom.
  • the monovalent organic group having 1 to 20 carbon atoms as R may be linear, branched or cyclic, and may be saturated or unsaturated.
  • Examples of the monovalent organic group having 1 to 20 carbon atoms as R include straight chain hydrocarbon groups having 1 to 20 carbon atoms, branched hydrocarbon groups having 3 to 20 carbon atoms, and 3 to 20 carbon atoms.
  • a cyclic hydrocarbon group, and an aromatic hydrocarbon group having 6 to 20 carbon atoms preferably a linear hydrocarbon group having 1 to 6 carbon atoms, a branched hydrocarbon group having 3 to 6 carbon atoms, And a cyclic hydrocarbon group having 3 to 6 carbon atoms and an aromatic hydrocarbon group having 6 to 20 carbon atoms.
  • a hydrogen atom in the group may be substituted with an alkyl group, a halogen atom other than a fluorine atom, or the like.
  • the monovalent organic group having 1 to 20 carbon atoms as R include methyl group, ethyl group, propyl group, butyl group, pentyl group, hexyl group, isopropyl group, isobutyl group, tertiary butyl group, cyclohexane Propyl group, cyclobutyl group, cyclopentyl group, cyclohexyl group, cyclopentynyl group, cyclohexynyl group, phenyl group, naphthyl group, anthryl group, tolyl group, xylyl group, dimethylphenyl group, trimethylphenyl group, ethylphenyl group, diethylphenyl group Group, triethylphenyl group, propylphenyl group, butylphenyl group, methylnaphthyl group, dimethylnaphthyl group, trimethylnaphthyl group
  • Rf represents a fluorine atom or a monovalent organic group having 1 to 20 carbon atoms having a fluorine atom.
  • Rf is a fluorine atom, a 2,2,2-trifluoroethyl group, a 2,2,3,3,3-pentafluoropropyl group or a 2- (perfluorobutyl) ethyl group.
  • b represents an integer of 1 to 5. In one certain form, b is 5.
  • the monovalent organic group having 1 to 20 carbon atoms as Rf may be linear, branched or cyclic, and may be saturated or unsaturated.
  • Examples of the monovalent organic group having 1 to 20 carbon atoms include a linear hydrocarbon group having 1 to 20 carbon atoms, a branched hydrocarbon group having 3 to 20 carbon atoms, and a cyclic hydrocarbon having 3 to 20 carbon atoms.
  • a hydrogen atom in the group may be substituted with an alkyl group, a halogen atom other than a fluorine atom, or the like.
  • the monovalent organic group having 1 to 20 carbon atoms as Rf include trifluoromethyl group, trifluoroethyl group, pentafluoropropyl group, hexafluoroisopropyl group, trifluorobutyl group, pentafluorobutyl group, A heptafluorobutyl group etc. are mentioned.
  • an alkyl group is preferable.
  • the divalent organic group having 1 to 20 carbon atoms may be linear, branched or cyclic, and may be an aliphatic hydrocarbon group or an aromatic hydrocarbon group.
  • a divalent linear aliphatic hydrocarbon group having 1 to 20 carbon atoms a divalent branched aliphatic hydrocarbon group having 3 to 20 carbon atoms, and a divalent cyclic hydrocarbon group having 3 to 20 carbon atoms
  • a divalent aromatic hydrocarbon group having 6 to 20 carbon atoms which may be substituted with an alkyl group or the like.
  • a divalent linear aliphatic hydrocarbon group having 1 to 6 carbon atoms a divalent linear aliphatic hydrocarbon group having 1 to 6 carbon atoms, a divalent branched aliphatic hydrocarbon group having 3 to 6 carbon atoms, and a divalent cyclic hydrocarbon group having 3 to 6 carbon atoms.
  • a divalent aromatic hydrocarbon group having 6 to 20 carbon atoms which may be substituted with an alkyl group or the like is preferable.
  • divalent aliphatic hydrocarbon group and the divalent cyclic hydrocarbon group include a methylene group, an ethylene group, a propylene group, a butylene group, a pentylene group, a hexylene group, an isopropylene group, an isobutylene group, and dimethylpropylene.
  • cyclopropylene group, cyclobutylene group, cyclopentylene group, cyclohexylene group and the like are examples of the divalent aliphatic hydrocarbon group and the divalent cyclic hydrocarbon group.
  • divalent aromatic hydrocarbon group having 6 to 20 carbon atoms include phenylene group, naphthylene group, anthrylene group, dimethylphenylene group, trimethylphenylene group, ethylenephenylene group, diethylenephenylene group, triethylenephenylene group, Examples thereof include a propylene phenylene group, a butylene phenylene group, a methyl naphthylene group, a dimethyl naphthylene group, a trimethyl naphthylene group, a vinyl naphthylene group, an ethenyl naphthylene group, a methyl anthrylene group, and an ethyl anthrylene group.
  • the polymer compound (A) used in the present invention is further at least one selected from the group consisting of a repeating unit containing a first functional group having thermal crosslinkability and a repeating unit containing a photosensitive group. It is preferable to contain the repeating unit.
  • the first functional group having thermal crosslinkability is a functional group that generates a second functional group that reacts with active hydrogen by heating.
  • active hydrogen refers to a hydrogen atom bonded to an atom other than a carbon atom such as an oxygen atom, a nitrogen atom and a sulfur atom.
  • the second functional group that reacts with active hydrogen is preferably protected (blocked) until heat is applied in the step of forming the gate insulating layer.
  • the first functional group is preferably deprotected by heat to generate a second functional group that reacts with active hydrogen. This is because the storage stability of the resin composition is improved.
  • Examples of the first functional group having thermal crosslinkability include an isocyanato group blocked with a blocking agent or an isothiocyanato group blocked with a blocking agent.
  • the isocyanato group blocked with the blocking agent or the blocked isothiocyanato group includes a blocking agent having only one active hydrogen capable of reacting with an isocyanato group or isothiocyanato group in one molecule of the blocking agent, an isocyanato group or isothiocyanato group. It can be produced by reacting with a group.
  • the blocking agent is preferably one that dissociates at a temperature of 170 ° C. or lower even after reacting with an isocyanato group or an isothiocyanato group.
  • the blocking agent include alcohol compounds, phenol compounds, active methylene compounds, mercaptan compounds, acid amide compounds, acid imide compounds, imidazole compounds, urea compounds, and oxime compounds. , Amine compounds, imine compounds, bisulfites, pyridine compounds, and pyrazole compounds. These blocking agents may be used alone or in combination of two or more.
  • Preferable blocking agents include oxime compounds and pyrazole compounds.
  • Examples of the alcohol compounds include methanol, ethanol, propanol, butanol, 2-ethylhexanol, methyl cellosolve, butyl cellosolve, methyl carbitol, benzyl alcohol, cyclohexanol and the like.
  • examples of phenolic compounds include phenol, cresol, ethylphenol, butylphenol, nonylphenol, dinonylphenol, styrenated phenol, hydroxybenzoic acid ester, and the like.
  • Examples of the active methylene compound include dimethyl malonate, diethyl malonate, methyl acetoacetate, ethyl acetoacetate, and acetylacetone.
  • Examples of mercaptan compounds include butyl mercaptan and dodecyl mercaptan.
  • acid amide compounds include acetanilide, acetic acid amide, ⁇ -caprolactam, ⁇ -valerolactam, and ⁇ -butyrolactam.
  • acid imide compounds include succinimide and maleic imide.
  • Examples of the imidazole compound include imidazole and 2-methylimidazole.
  • Examples of urea compounds include urea, thiourea, and ethylene urea.
  • Examples of the amine compound include diphenylamine, aniline, carbazole and the like.
  • Examples of the imine compound include ethyleneimine and polyethyleneimine.
  • Examples of the bisulfite include sodium bisulfite.
  • Examples of pyridine compounds include 2-hydroxypyridine and 2-hydroxyquinoline.
  • Examples of oxime compounds include formal oxime, acetal oxime, acetoxime, methyl ethyl ketoxime, cyclohexanone oxime, and the like.
  • Examples of the pyrazole compound include 3,5-dimethylpyrazole, 3,5-diethylpyrazole and the like.
  • the isocyanato group or isothiocyanato group blocked with a blocking agent that may be used in the present invention is preferably a group represented by the following formula (3) or formula (4).
  • X represents an oxygen atom or a sulfur atom
  • R 7 to R 11 are the same or different and each represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms.
  • the definition and specific examples of the monovalent organic group are the same as the definition and specific examples of the monovalent organic group in R 1 described above.
  • R 7 and R 8 are the same or different. It is a group selected from the group consisting of a methyl group and an ethyl group. In another form, R 9 to R 11 are hydrogen atoms.
  • Examples of the isocyanato group blocked with a blocking agent include O- (methylideneamino) carboxyamino group, O- (1-ethylideneamino) carboxyamino group, O- (1-methylethylideneamino) carboxyamino group, O— [1-methylpropylideneamino] carboxyamino group, (N-3,5-dimethylpyrazolylcarbonyl) amino group, (N-3-ethyl-5-methylpyrazolylcarbonyl) amino group, (N-3,5-diethyl) And pyrazolylcarbonyl) amino group, (N-3-propyl-5-methylpyrazolylcarbonyl) amino group, and (N-3-ethyl-5-propylpyrazolylcarbonyl) amino group.
  • Examples of the isothiocyanato group blocked with a blocking agent include an O- (methylideneamino) thiocarboxyamino group, an O- (1-ethylideneamino) thiocarboxyamino group, and an O- (1-methylethylideneamino) thiocarboxyamino group.
  • the first functional group used in the present invention is preferably an isocyanato group blocked with a blocking agent.
  • the polymer compound (A) is, for example, a photopolymerization initiator or thermal polymerization of a polymerizable monomer that is a raw material of the repeating unit represented by the formula (1) and a polymerizable monomer containing the first functional group. It can manufacture by the method of copolymerizing using an initiator.
  • Examples of the polymerizable monomer that is a raw material for the repeating unit represented by the formula (1) include 2-trifluoromethylstyrene, 3-trifluoromethylstyrene, 4-trifluoromethylstyrene, 2,3,4,5,6. -Pentafluorostyrene, 4-fluoromethylstyrene and the like.
  • Examples of the polymerizable monomer containing the first functional group having thermal crosslinkability include an isocyanato group blocked with a blocking agent or a monomer having an isothiocyanate group blocked with a blocking agent and an unsaturated bond in the molecule.
  • a monomer having an isocyanato group blocked with the blocking agent or an isothiocyanato group blocked with a blocking agent and an unsaturated bond in the molecule is an isocyanate group or a compound having an isothiocyanato group and an unsaturated bond in the molecule. It can be produced by reacting with a blocking agent. As the unsaturated bond, an unsaturated double bond is preferable.
  • Examples of the compound having an unsaturated double bond and an isocyanato group in the molecule include 2-acryloyloxyethyl isocyanate, 2-methacryloyloxyethyl isocyanate, 2- (2'-methacryloyloxyethyl) oxyethyl isocyanate, and the like.
  • Examples of the compound having an unsaturated double bond and an isothiocyanato group in the molecule include 2-acryloyloxyethyl isothiocyanate, 2-methacryloyloxyethyl isothiocyanate, and 2- (2′-methacryloyloxyethyl) oxyethyl isothiocyanate. Can be mentioned.
  • the blocking agent can be preferably used.
  • an organic solvent, a catalyst, or the like can be added as necessary. .
  • Examples of the monomer having an isocyanato group blocked with a blocking agent and an unsaturated double bond in the molecule include 2- [O- [1′-methylpropylideneamino] carboxyamino] ethyl-methacrylate, 2- [ N- [1 ′, 3′-dimethylpyrazolyl] carbonylamino] ethyl-methacrylate and the like.
  • Examples of the monomer having an isothiocyanato group blocked with a blocking agent and an unsaturated double bond in the molecule include 2- [O- [1′-methylpropylideneamino] thiocarboxyamino] ethyl-methacrylate, 2- [N- [1 ′, 3′-dimethylpyrazolyl] thiocarbonylamino] ethyl-methacrylate and the like.
  • photopolymerization initiator examples include acetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 4-isopropyl-2-hydroxy-2-methylpropiophenone, 2-hydroxy- 2-methylpropiophenone, 4,4′-bis (diethylamino) benzophenone, benzophenone, methyl (o-benzoyl) benzoate, 1-phenyl-1,2-propanedione-2- (o-ethoxycarbonyl) oxime, -Phenyl-1,2-propanedione-2- (o-benzoyl) oxime, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin octyl ether, benzyl, benzyl dimethyl Ruketaru, benzyl diethyl ketal, carbonyl compounds
  • the thermal polymerization initiator may be any radical polymerization initiator, such as 2,2′-azobisisobutyronitrile, 2,2′-azobisisovaleronitrile, 2,2 ′. -Azobis (2,4-dimethylvaleronitrile), 4,4'-azobis (4-cyanovaleric acid), 1,1'-azobis (cyclohexanecarbonitrile), 2,2'-azobis (2-methylpropane) ), Azo compounds such as 2,2′-azobis (2-methylpropionamidine) dihydrochloride, ketone peroxides such as methyl ethyl ketone peroxide, methyl isobutyl ketone peroxide, cyclohexanone peroxide, acetylacetone peroxide, isobutyl peroxide Oxide, benzoyl peroxide, 2,4-dichlorobenzoyl peroxy , Diacyl peroxides such as o-methylbenzoyl peroxide,
  • the polymer compound (A) used in the present invention is a polymerizable monomer other than the polymerizable monomer that is a raw material of the repeating unit represented by the formula (1) and the polymerizable monomer containing the first functional group. May be added during the polymerization.
  • Examples of the other polymerizable monomers include acrylic acid esters and derivatives thereof, methacrylic acid esters and derivatives thereof, styrene and derivatives thereof, vinyl acetate and derivatives thereof, methacrylonitrile and derivatives thereof, acrylonitrile and derivatives thereof, organic Vinyl esters of carboxylic acids and derivatives thereof, allyl esters of organic carboxylic acids and derivatives thereof, dialkyl esters of fumaric acid and derivatives thereof, dialkyl esters of maleic acid and derivatives thereof, dialkyl esters of itaconic acid and derivatives thereof, organic carboxylic acids Examples thereof include N-vinylamide derivatives, maleimides and derivatives thereof, terminal unsaturated hydrocarbons and derivatives thereof, organic germanium derivatives, acrylamide and derivatives thereof, and the like.
  • the kind of the other polymerizable monomer is appropriately selected according to the characteristics required for the insulating layer.
  • a monomer that has a high molecular density and forms a hard film such as styrene or a styrene derivative is selected.
  • monomers that impart flexibility such as methacrylic acid esters and derivatives thereof, and acrylic acid esters and derivatives thereof are selected.
  • a monomer that does not have an active hydrogen-containing group such as an alkyl group such as a methyl group or an ethyl group is selected.
  • a gate insulating layer having particularly high durability and low hysteresis can be obtained by using a combination of a polymerizable monomer, which is a raw material of the repeating unit represented by the formula (1), and styrene or a styrene derivative having no active hydrogen-containing group. Is obtained.
  • acrylate esters and derivatives thereof monofunctional acrylates and polyfunctional acrylates with restrictions on the amount of use can be used.
  • methacrylic acid esters and derivatives thereof monofunctional methacrylates and polyfunctional methacrylates can be used although there are restrictions on the amount used, for example, methyl methacrylate, methacrylic acid Ethyl, methacrylic acid-n-propyl, isopropyl methacrylate, methacrylic acid-n-butyl, isobutyl methacrylate, methacrylic acid-sec-butyl, hexyl methacrylate, octyl methacrylate, methacrylic acid 2-ethylhexyl, decyl methacrylate, isobornyl methacrylate, cyclohexyl methacrylate, phenyl methacrylate, benzyl methacrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl methacrylate, methacrylic acid -3-hydroxy Lopyl, 2-hydroxybutyl methacrylate, 2-hydroxyphenyl ethyl
  • styrene and derivatives thereof include styrene, 2,4-dimethyl- ⁇ -methylstyrene, o-methylstyrene, m-methylstyrene, p-methylstyrene, 2,4-dimethylstyrene, 2,5-dimethylstyrene, 2 , 6-dimethylstyrene, 3,4-dimethylstyrene, 3,5-dimethylstyrene, 2,4,6-trimethylstyrene, 2,4,5-trimethylstyrene, pentamethylstyrene, o-ethylstyrene, m-ethyl Styrene, p-ethylstyrene, o-chlorostyrene, m-chlorostyrene, p-chlorostyrene, o-bromostyrene, m-bromostyrene, p-bromostyrene, p
  • Acrylonitrile and its derivatives include acrylonitrile and the like.
  • Examples of methacrylonitrile and derivatives thereof include methacrylonitrile.
  • vinyl esters of organic carboxylic acids and derivatives thereof include vinyl acetate, vinyl propionate, vinyl butyrate, vinyl benzoate, and divinyl adipate.
  • allyl esters of organic carboxylic acids and derivatives thereof include allyl acetate, allyl benzoate, diallyl adipate, diallyl terephthalate, diallyl isophthalate, and diallyl phthalate.
  • Dialkyl esters of fumaric acid and derivatives thereof include dimethyl fumarate, diethyl fumarate, diisopropyl fumarate, di-sec-butyl fumarate, diisobutyl fumarate, di-n-butyl fumarate, di-2-ethylhexyl fumarate And dibenzyl fumarate.
  • Dialkyl esters of maleic acid and derivatives thereof include dimethyl maleate, diethyl maleate, diisopropyl maleate, di-sec-butyl maleate, diisobutyl maleate, di-n-butyl maleate, di-2-ethylhexyl maleate And dibenzyl maleate.
  • Dialkyl esters of itaconic acid and its derivatives include dimethyl itaconate, diethyl itaconate, diisopropyl itaconate, di-sec-butyl itaconate, diisobutyl itaconate, di-n-butyl itaconate, di-2-ethylhexyl itaconate And dibenzyl itaconate.
  • N-vinylamide derivatives of organic carboxylic acids examples include N-methyl-N-vinylacetamide.
  • maleimide and derivatives thereof include N-phenylmaleimide and N-cyclohexylmaleimide.
  • terminal unsaturated hydrocarbons and derivatives thereof examples include 1-butene, 1-pentene, 1-hexene, 1-octene, vinylcyclohexane, vinyl chloride, and allyl alcohol.
  • organic germanium derivatives examples include allyltrimethylgermanium, allyltriethylgermanium, allyltributylgermanium, trimethylvinylgermanium, triethylvinylgermanium, and the like.
  • Acrylamide and its derivatives include N, N-dimethylacrylamide, N, N-diethylacrylamide, N-acryloylmorpholine, N-hydroxyethylacrylamide, N, N-dimethylaminopropylacrylamide and the like.
  • Acrylamide and its derivatives are particularly preferable because the solubility of the polymer compound (A) in the organic compound (B) having a fluorine atom used as a solvent is improved.
  • acrylic acid alkyl ester methacrylic acid alkyl ester, styrene, acrylonitrile, methacrylonitrile, and allyltrimethylgermanium are preferable.
  • the amount of the polymerizable monomer used as the raw material of the repeating unit represented by the formula (1) is adjusted so that the amount of fluorine introduced into the polymer compound (A) becomes an appropriate amount.
  • the repeating unit represented by the formula (1) is all repeating units contained in the polymer compound (A). It is preferably contained in an amount of 30 mol% or more, preferably 30 to 95 mol%, more preferably 40 to 90 mol%, based on the amount.
  • the content of the repeating unit represented by the formula (1) is less than 30 mol%, the solubility of the polymer compound (A) in the organic compound (B) having a fluorine atom may be insufficient.
  • the amount of fluorine contained in the polymer compound (A) is preferably 1 to 80% by mass, more preferably 5 to 70% by mass, and further preferably 10 to 60% by mass with respect to the mass of the polymer compound. If the amount of fluorine is less than 1% by mass, the effect of reducing the hysteresis of the field effect organic thin film transistor may be insufficient. If it exceeds 80% by mass, the affinity with the organic semiconductor material deteriorates and the active layer May be difficult to laminate on top of it.
  • the charged molar ratio of the monomer having an unsaturated double bond and an isocyanato group blocked with a blocking agent or an isothiocyanate group blocked with a blocking agent in the molecule is 2 to 60
  • the charged molar ratio is 70 mol% or less, preferably 50 mol% or less, more preferably 40 mol% or less, in all monomers involved in polymerization. . If the charged molar ratio of acrylamide and its derivative exceeds 70 mol%, the solubility of the polymer compound (A) in the organic compound (B) having a fluorine atom may be lowered.
  • the polymer compound (A) has a weight average molecular weight of preferably 3,000 to 1,000,000, more preferably 5,000 to 500,000, and may be linear, branched or cyclic.
  • the repeating unit represented by the formula (1) constituting the polymer compound (A) has a fluorine atom introduced into the repeating unit and does not have an active hydrogen-containing group such as a hydroxyl group. For this reason, the formed gate insulating layer has a low polarity as a whole, and there are few components that are easily polarized even when a gate voltage is applied, so that the polarization of the gate insulating layer is suppressed. When the polarization of the gate insulating layer is suppressed, the hysteresis of the field effect organic thin film transistor is lowered, and the operation accuracy is improved.
  • the polymer compound containing two or more first functional groups that generate two functional groups include poly (styrene-co-3-chloromethylstyrene-co-pentafluorostyrene-co- [2- [ O- (1′-methylpropylideneamino) carboxyamino] ethyl-methacrylate]), poly (styrene-co-3-chloromethylstyrene-co-pentafluorostyrene-co- [2- [1 ′-(3 ′ , 5'-dimethylpyrazolyl) carbonylamino] ethyl-methacrylate]), poly (styrene-co-3-chloromethylstyrene-co-pentafluorostyrene-co-acrylic
  • the polymer compound (A) used in the present invention may further have a repeating unit containing a photosensitive group in addition to the repeating unit represented by the formula (1).
  • the group having photosensitivity means a group that can be chemically changed by irradiation with light or radiation.
  • the photosensitive group is preferably a functional group that absorbs light energy or electron energy to cause a dimerization reaction. This is because the heat treatment for cross-linking the insulating layer material takes a short time, and the transistor characteristics are hardly deteriorated in the process of forming the insulating layer.
  • the photosensitive group examples include a group having an acrylate structure, a group having a methacrylate structure, a vinyl group, and a chloromethylphenyl group.
  • the polymer compound containing a repeating unit represented by the formula (1) and a group having photosensitivity in the molecule that can be used in the present invention is a polymer that is a raw material for the repeating unit represented by the formula (1).
  • a monomer and a polymerizable monomer containing a group containing active hydrogen are polymerized using a photopolymerization initiator or a thermal polymerization initiator to produce a polymer, and then the polymer is converted into an isocyanato group or an isothianato group in the molecule.
  • numerator which can be used for this invention becomes a raw material of the repeating unit represented by Formula (1). It can also be produced by a method in which a polymerizable monomer and a polymerizable monomer containing a chloromethylphenyl group are copolymerized using a photopolymerization initiator or a thermal polymerization initiator.
  • the polymer compound containing a repeating unit represented by the formula (1) and a group having photosensitivity in the molecule that can be used in the present invention is a polymer that is a raw material for the repeating unit represented by the formula (1).
  • a polymer is produced by polymerizing a monomer, a polymerizable monomer containing a group containing active hydrogen, and another polymerizable monomer using a photopolymerization initiator or a thermal polymerization initiator.
  • numerator which can be used for this invention becomes a raw material of the repeating unit represented by Formula (1).
  • the organic thin film transistor insulating layer composition of the present invention may contain one type of polymer compound (A) or two or more types. Especially, it is preferable that 2 or more types of polymer compounds (A) are included.
  • the composition for an organic thin film transistor insulating layer of the present invention preferably contains an active hydrogen compound.
  • the active hydrogen-containing group contained in the active hydrogen compound and the second functional group contained in the polymer compound (A) react by heating after applying and drying the composition for an organic thin film transistor insulating layer.
  • a crosslinked structure is formed inside the organic thin film transistor insulating layer, polarization during voltage application is suppressed, and the absolute value and hysteresis of the threshold voltage of the organic thin film transistor can be reduced.
  • the active hydrogen compound examples include a low molecular compound containing at least two active hydrogens in the molecule and a polymer compound containing at least two active hydrogens in the molecule.
  • the active hydrogen typically includes a hydrogen atom contained in an amino group, a hydroxy group, a mercapto group, or the like.
  • active hydrogen the hydrogen atom contained in the hydroxyl group in the phenolic hydroxy group and the amino group in the aromatic amino group capable of satisfactorily reacting with the above-described second functional group, in particular, isocyanato group and isothiocyanato group. Hydrogen contained in the group is a preferred atom.
  • a specific example of a low molecular weight compound containing at least two active hydrogens in the molecule is a compound having a structure in which two or more active hydrogen-containing groups are bonded to a low molecular (monomer) structure.
  • this low molecular structure include an alkyl structure and a benzene ring structure.
  • the low molecular compound include low molecular compounds such as amine compounds, alcohol compounds, phenol compounds, and thiol compounds.
  • amine compounds include ethylenediamine, propylenediamine, hexamethylenediamine, N, N, N ′, N ′,-tetraaminoethylethylenediamine, ortho-phenylenediamine, meta-phenylenediamine, para-phenylenediamine, N, N ′.
  • alcohol compounds include ethylene glycol, 1,2-dihydroxypropane, glycerol, 1,4-dimethanolbenzene and the like.
  • phenolic compounds include 1,2-dihydroxybenzene, 1,3-dihydroxybenzene, 1,4-dihydroxybenzene, 1,2-dihydroxynaphthalene, resorcin, fluoroglycerol, 2,3,4-trihydroxybenzaldehyde. Examples thereof include 3,4,5-trihydroxybenzamide.
  • Examples of the thiol compound include ethylene dithiol and para-phenylene dithiol.
  • the active hydrogen may be directly bonded to the main chain constituting the polymer compound, and is bonded through a predetermined group. It may be.
  • the active hydrogen may be contained in the structural unit constituting the polymer compound. In that case, it may be contained in each structural unit, or may be contained only in a part of the structural units. . Furthermore, the active hydrogen may be bonded only to the terminal of the polymer compound.
  • the polymer compound containing at least two or more active hydrogens in the molecule include compounds having a structure in which two or more active hydrogen-containing groups are bonded to a polymer (polymer) structure.
  • a polymer compound is obtained by polymerizing a monomer compound (monomer) having an active hydrogen-containing group and an unsaturated bond such as a double bond in the molecule alone or with another copolymerizable compound.
  • a photopolymerization initiator or a thermal polymerization initiator may be applied.
  • the thing similar to what was mentioned above is applicable as a polymerizable monomer, a photoinitiator, and a thermal polymerization initiator.
  • Examples of the monomer having an active hydrogen-containing group and an unsaturated bond in the molecule include 4-aminostyrene, 4-allylaniline, 4-aminophenyl vinyl ether, 4- (N-phenylamino) phenyl allyl ether, 4 -(N-methylamino) phenyl allyl ether, 4-aminophenyl allyl ether, allylamine, 2-aminoethyl acrylate, 4-hydroxystyrene, 4-hydroxyallylbenzene, 4-hydroxyphenyl vinyl ether, 4-hydroxyphenyl allyl ether, 4-hydroxybutyl vinyl ether, vinyl alcohol, 2-hydroxyethyl acrylate, 2-hydroxypropyl acrylate, 3-hydroxypropyl acrylate, 2-hydroxybutyl acrylate, acrylic acid-4 Hydroxyphenyl, acrylic acid-2-hydroxyphenylethyl 2-aminoethyl methacrylate, methacrylic acid-2-hydroxyethyl, methacrylic
  • the polymer compound containing at least two or more active hydrogens in the molecule is preferably a compound having a fluorine atom in the molecule.
  • the solubility of the polymer compound in the organic compound (B) having a fluorine atom used as a solvent is improved.
  • the amount of fluorine introduced into the organic thin film transistor insulating layer increases, and the absolute value and hysteresis of the threshold voltage of the organic thin film transistor can be reduced.
  • the polymer compound includes, for example, a monomer having an active hydrogen-containing group and an unsaturated bond such as a double bond in the molecule, and a polymerizable monomer that is a raw material of the repeating unit represented by the formula (1). It may be a copolymer.
  • a novolak resin obtained by condensing a phenol compound and formaldehyde in the presence of an acid catalyst is also preferably used.
  • the polystyrene equivalent weight average molecular weight of the polymer compound containing two or more active hydrogen-containing groups in the molecule is preferably from 1,000 to 1,000,000, and more preferably from 3,000 to 500,000. Thereby, the effect that the flatness and uniformity of the insulating layer are improved can be obtained.
  • Examples of the polymerizable monomer containing a group containing active hydrogen include the aforementioned monomers.
  • the composition for organic thin-film transistor insulating layers of the present invention contains an organic compound (B) having a fluorine atom as a solvent.
  • the composition for an organic thin film transistor insulating layer needs to be fluid.
  • the organic thin film transistor insulating layer composition needs to form a solid layer.
  • the fact that the composition contains the organic compound (B) having a fluorine atom as a solvent means that the organic compound having a fluorine atom is detected by distilling the composition and measuring the 19 F-NMR spectrum of the distillate. This can be confirmed.
  • the organic compound (B) having a fluorine atom can fluidize and volatilize the polymer compound (A) under normal environmental conditions used when manufacturing an organic thin film transistor.
  • the organic thin film transistor insulating layer composition containing the organic compound (B) having a fluorine atom as a solvent in the organic thin film transistor insulating layer composition is improved in the property of spreading as a thin film. Therefore, the insulating layer can be thinly formed by a coating method or a printing method, and the flatness of the formed insulating layer surface is improved.
  • an organic compound having a fluorine atom has poor affinity with an organic substance having no fluorine atom, and does not adversely affect the function of the organic layer constituting the organic thin film transistor or the interface of the organic layer.
  • the organic compound having a fluorine atom is preferably composed of carbon, hydrogen and fluorine, and does not contain any other atom. This is because such an organic compound having a fluorine atom has particularly poor affinity with an organic substance having no fluorine atom.
  • an aromatic compound having a fluorine atom is preferably used as the organic compound having a fluorine atom. This is because the aromatic compound having a fluorine atom is excellent in the property of dissolving the polymer compound (A).
  • aromatic compound having a fluorine atom examples include hexafluorobenzene, 2,3,4,5,6-pentafluorotoluene, octafluorotoluene, 2,3,4,5,6-pentafluorostyrene, and the like. Is mentioned.
  • the content of the organic solvent having a fluorine atom is preferably 50 to 2500 parts by weight, and 100 to 2000 parts per 100 parts by weight of the polymer compound (A). More preferred are parts by weight.
  • all of the solid content including the polymer compound (A) in the composition is dissolved in the solvent including the organic compound (B). It is preferable.
  • composition for an organic thin film transistor insulating layer of the present invention can contain a compound other than the organic compound (B) as long as it is allowed to form an organic thin film transistor insulating layer using the composition.
  • organic compound (B) examples include 2-heptanone and propylene glycol monoether acetate.
  • the organic thin film transistor insulating layer composition of the present invention may contain a crosslinking agent used for crosslinking the polymer compound (A), an additive used in combination with the crosslinking agent, and the like.
  • a crosslinking agent used for crosslinking the polymer compound (A) used for crosslinking the polymer compound (A)
  • an additive used in combination with the crosslinking agent, and the like.
  • the catalyst for promoting a crosslinking reaction a leveling agent, a viscosity modifier, etc. can be used.
  • the composition for an organic thin film transistor insulating layer of the present invention is a composition used for forming an insulating layer contained in an organic thin film transistor.
  • the insulating layers of organic thin film transistors it is preferably used for forming an overcoat layer or a gate insulating layer.
  • the organic thin film transistor insulating layer composition is preferably an organic thin film transistor overcoat layer composition or an organic thin film transistor gate insulating layer composition.
  • FIG. 1 is a schematic cross-sectional view showing the structure of a bottom gate top contact organic thin film transistor according to an embodiment of the present invention.
  • the organic thin film transistor includes a substrate 1, a gate electrode 2 formed on the substrate 1, a gate insulating layer 3 formed on the gate electrode 2, an organic semiconductor layer 4 formed on the gate insulating layer 3, A source electrode 5 and a drain electrode 6 formed on the organic semiconductor layer 4 with a channel portion interposed therebetween, and an overcoat 7 covering the entire element are provided.
  • a bottom gate top contact type organic thin film transistor includes, for example, a gate electrode formed on a substrate, a gate insulating layer formed on the gate electrode, an organic semiconductor layer formed on the gate insulating layer, and a source electrode formed on the organic semiconductor layer.
  • the drain electrode can be formed and an overcoat layer can be formed thereon.
  • FIG. 2 is a schematic cross-sectional view showing the structure of a bottom gate bottom contact type organic thin film transistor which is an embodiment of the present invention.
  • a substrate 1 a gate electrode 2 formed on the substrate 1, a gate insulating layer 3 formed on the gate electrode 2, and a channel portion on the gate insulating layer 3 are formed.
  • a bottom gate bottom contact type organic thin film transistor includes, for example, a gate electrode formed on a substrate, a gate insulating layer formed on the gate electrode, a source electrode and a drain electrode formed on the gate insulating layer, and a source electrode and a drain electrode. It can be manufactured by forming an organic semiconductor layer thereon and forming an overcoat thereon.
  • composition for an organic thin film transistor insulating layer of the present invention is suitably used for forming an overcoat layer as an organic thin film transistor overcoat layer composition.
  • the composition for an organic thin film transistor insulating layer of the present invention is also preferably used for forming a gate insulating layer as an organic thin film transistor gate insulating layer composition.
  • An organic thin film transistor insulating layer such as a gate insulating layer and an overcoat insulating layer is formed by applying the organic thin film transistor insulating layer composition of the present invention to the surface of a substrate to form a coating layer, and drying the solvent from the coating layer (That is, the solvent is volatilized).
  • the “substrate” refers to a constituent member of the organic thin film transistor on which the organic thin film transistor insulating layer is disposed.
  • the gate insulating layer is formed by coating the composition for an organic thin film transistor insulating layer of the present invention with the insulating layer coating solution on a substrate on which a gate electrode is formed so as to cover the gate electrode.
  • the applied liquid is dried (that is, the solvent is volatilized from the applied composition), and then cured if necessary.
  • a silicon substrate, a glass substrate, a plastic substrate, or the like is used as the substrate.
  • the overcoat insulating layer is formed by applying the insulating layer coating liquid onto a substrate on which a gate electrode, a gate insulating layer, a source electrode, a drain electrode, and an organic semiconductor layer are formed on a substrate.
  • the applied liquid is dried and then cured if necessary.
  • a leveling agent, a surfactant, a curing catalyst, or the like can be added as necessary.
  • the organic thin film transistor insulating layer composition can be applied by known spin coating, die coater, screen printing, ink jet, or the like.
  • Curing means that the organic thin film transistor insulating layer resin composition is crosslinked.
  • Crosslinking of the resin composition for transistor insulating layers is performed, for example, by applying electromagnetic waves and / or heat to the coating layer. This is because the second functional group is generated from the first functional group of the polymer compound (A) and reacts with the active hydrogen-containing group of the active hydrogen compound.
  • the coating layer is cured by applying heat to the coating layer and irradiating an electromagnetic wave or an electron beam.
  • Application of heat and irradiation with electromagnetic waves or electron beams may be performed in the reverse order.
  • a group having photosensitivity reacts in addition to the second functional group and the active hydrogen-containing group.
  • the crosslink density of the insulating layer is improved, polarization during voltage application is further suppressed, and the absolute value and hysteresis of the threshold voltage of the organic thin film transistor are reduced.
  • the coating layer When heat is applied to the coating layer, the coating layer is heated to a temperature of about 80 to 250 ° C., preferably about 100 to 230 ° C., and maintained for about 5 to 120 minutes, preferably about 10 to 60 minutes. If the heating temperature is too low or the heating time is too short, the insulating layer is not sufficiently crosslinked, and if the heating temperature is too high or the heating time is too long, the insulating layer may be damaged.
  • the irradiation conditions are adjusted in consideration of the degree of crosslinking and damage of the insulating layer.
  • the application condition is adjusted in consideration of the cross-linking of the insulating layer and the degree of damage.
  • the wavelength of the electromagnetic wave to be irradiated is preferably 450 nm or less, more preferably 150 to 410 nm.
  • the organic thin film transistor insulating layer material may be insufficiently crosslinked.
  • electromagnetic waves ultraviolet rays are preferable.
  • Irradiation with ultraviolet rays can be performed using, for example, an exposure apparatus used for manufacturing a semiconductor or a UV lamp used for curing a UV curable resin.
  • the electron beam irradiation can be performed using, for example, a micro electron beam irradiation tube.
  • Heating can be performed using a heater, an oven, or the like. Other irradiation conditions and heating conditions are appropriately determined according to the type and amount of the addition polymerization reactive group and the photopolymerization initiator used.
  • a self-assembled monolayer may be formed on the gate insulating layer.
  • the self-assembled monolayer can be formed, for example, by treating the gate insulating film with a solution obtained by dissolving 1 to 10% by weight of an alkylchlorosilane compound or an alkylalkoxysilane compound in an organic solvent.
  • alkylchlorosilane compound examples include methyltrichlorosilane, ethyltrichlorosilane, butyltrichlorosilane, decyltrichlorosilane, and octadecyltrichlorosilane.
  • alkylalkoxysilane compound examples include methyltrimethoxysilane, ethyltrimethoxysilane, butyltrimethoxysilane, decyltrimethoxysilane, octadecyltrimethoxysilane and the like.
  • the substrate 1, gate electrode 2, source electrode 5, drain electrode 6 and organic semiconductor layer 4 may be composed of commonly used materials and methods.
  • a resin or plastic plate or film, a glass plate, a silicon plate, or the like is used as the substrate material.
  • As the material of the electrode chromium, gold, silver, aluminum or the like is used, and it is formed by a known method such as a vapor deposition method, a sputtering method, a printing method, or an ink jet method.
  • organic semiconductor compounds As organic semiconductor compounds, ⁇ -conjugated polymers are widely used. For example, polypyrroles, polythiophenes, polyanilines, polyallylamines, fluorenes, polycarbazoles, polyindoles, poly (P-phenylene vinylene) s, etc. are used. be able to.
  • low-molecular substances having solubility in organic solvents for example, polycyclic aromatic derivatives such as pentacene, phthalocyanine derivatives, perylene derivatives, tetrathiafulvalene derivatives, tetracyanoquinodimethane derivatives, fullerenes, carbon nanotubes Etc. can be used. Specific examples include condensates of 9,9-di-n-octylfluorene-2,7-di (ethylene boronate) and 5,5′-dibromo-2,2′-bithiophene. .
  • the formation of the organic semiconductor layer is performed, for example, by adding a solvent or the like to the organic semiconductor compound to prepare an organic semiconductor coating solution, and applying and drying this on the gate insulating layer.
  • the resin constituting the gate insulating layer has a phenyl moiety and has an affinity for an organic semiconductor compound. Therefore, a uniform and flat interface is formed between the organic semiconductor layer and the gate insulating layer by the coating and drying method.
  • the solvent used is not particularly limited as long as it dissolves or disperses the organic semiconductor, but preferably has a boiling point of 50 ° C. to 200 ° C. at normal pressure.
  • the solvent include chloroform, toluene, anisole, 2-heptanone, propylene glycol monomethyl ether acetate and the like.
  • the organic semiconductor coating liquid can be applied onto the gate insulating layer by a known spin coating, die coater, screen printing, ink jet, or the like, similarly to the insulating layer coating liquid.
  • the organic thin film transistor of the present invention is preferably coated with an overcoat material for the purpose of protecting the organic thin film transistor and improving the smoothness of the surface.
  • the organic thin film transistor of the present invention may be a top gate type transistor.
  • a gate insulating layer is formed in contact with the organic semiconductor layer in order to protect the organic semiconductor layer from the outside air.
  • the composition for a thin film transistor insulating layer of the present invention is suitably used for forming a gate insulating layer as an organic thin film transistor gate insulating layer composition.
  • the display member which has an organic thin-film transistor suitably can be produced using the organic thin-film transistor of the present invention.
  • a display member having the organic thin film transistor a display including the display member can be suitably produced.
  • Synthesis example 1 (Synthesis of polymer compound 1) Styrene (Wako Pure Chemical Industries, Ltd.) 2.60 g, 2,3,4,5,6-pentafluorostyrene (Aldrich) 9.71 g, 2- [O- [1′-methylpropylideneamino] carboxyamino] ethyl -Methacrylate (made by Showa Denko, trade name “Karenz MOI-BM”) 2.00 g, 2,2′-azobis (2-methylpropionitrile) 0.07 g, octafluorotoluene (made by Wako Pure Chemical Industries) 3.59 g Was put in a 50 ml pressure vessel (manufactured by Ace), bubbled with nitrogen, sealed, and polymerized in an oil bath at 60 ° C.
  • Styrene (Wako Pure Chemical Industries, Ltd.) 2.60 g, 2,3,4,5,6-pentafluorostyrene (Aldrich) 9.71 g,
  • the high molecular compound 1 has the following repeating unit.
  • the numbers in parentheses indicate the mole fraction of repeating units.
  • Synthesis example 2 (Synthesis of polymer compound 2) 4-aminostyrene (manufactured by Aldrich) 0.30 g, 2,3,4,5,6-pentafluorostyrene (manufactured by Aldrich) 4.40 g, 2,2′-azobis (2-methylpropionitrile) 0.02 g Then, 7.09 g of octafluorotoluene (manufactured by Wako Pure Chemical Industries, Ltd.) was placed in a 50 ml pressure vessel (manufactured by ACE), bubbled with nitrogen, sealed, and polymerized in an oil bath at 60 ° C. for 48 hours.
  • a 50 ml pressure vessel manufactured by ACE
  • the high molecular compound 2 has the following repeating unit.
  • the numbers in parentheses indicate the mole fraction of repeating units.
  • Synthesis example 3 (Synthesis of polymer compound 3) In toluene (80 mL) containing 6.40 g of 9,9-di-n-octylfluorene-2,7-di (ethylene boronate) and 4.00 g of 5,5′-dibromo-2,2′-bithiophene Under nitrogen, 0.18 g of tetrakis (triphenylphosphine) palladium, 1.0 g of methyltrioctylammonium chloride (manufactured by Aldrich, trade name “Aliquat 336” (registered trademark)), and 24 mL of 2M aqueous sodium carbonate solution were added. It was.
  • the mixture was stirred vigorously and heated at reflux for 24 hours.
  • the viscous reaction mixture was poured into 500 mL of acetone to precipitate a fibrous yellow polymer.
  • the polymer was collected by filtration, washed with acetone and dried in a vacuum oven at 60 ° C. overnight.
  • the resulting polymer is referred to as polymer compound 3.
  • the high molecular compound 3 has the following repeating unit. n indicates the number of repeating units.
  • Synthesis example 4 (Synthesis of polymer compound 4) 1.12 g of styrene (manufactured by Wako Pure Chemical Industries), 6.26 g of 2,3,4,5,6-pentafluorostyrene (manufactured by Aldrich), 0.68 g of diethylacrylamide (manufactured by Kojin Co., Ltd.), 2- [O- [1'-Methylpropylideneamino] carboxyamino] ethyl-methacrylate (produced by Showa Denko, trade name "Karenz MOI-BM”) 1.29 g, 2,2'-azobis (2-methylpropionitrile) 0.05 g , 2,3,4,5,6-pentafluorotoluene (Aldrich) (14.10 g) was put in a 50 ml pressure vessel (Ace), bubbled with argon, sealed, and sealed in an oil bath at 60 ° C.
  • Synthesis example 5 (Synthesis of polymer compound 5) Styrene (manufactured by Wako Pure Chemical Industries) 0.56 g, 2,3,4,5,6-pentafluorostyrene (manufactured by Aldrich) 6.26 g, diethylacrylamide (manufactured by Kojin Co., Ltd.) 1.37 g, 2- [O- [1'-Methylpropylideneamino] carboxyamino] ethyl-methacrylate (produced by Showa Denko, trade name "Karenz MOI-BM”) 1.29 g, 2,2'-azobis (2-methylpropionitrile) 0.05 g , 2,3,4,5,6-pentafluorotoluene (Aldrich) 14.29 g was put in a 50 ml pressure vessel (Ace), bubbled with argon, sealed, and placed in an oil bath at 60 ° C.
  • Synthesis example 7 (Synthesis of polymer compound 7) In an inert atmosphere, 2,7-bis (1,3,2-dioxaborolan-2-yl) -9,9-dioctylfluorene (5.20 g), bis (4-bromophenyl)-(4-secondary butylphenyl) ) -Amine (4.50 g), palladium acetate (2.2 mg), tri (2-methylphenyl) phosphine (15.1 mg), Aliquat 336 (0.91 g, manufactured by Aldrich), toluene (70 ml) were mixed. Heated to ° C. To this reaction solution, a 2 wt.
  • the polymer compound 7 had a polystyrene equivalent number average molecular weight of 1.2 ⁇ 10 5 and a polystyrene equivalent weight average molecular weight of 2.6 ⁇ 10 5 .
  • n in the figure below represents the degree of polymerization.
  • Synthesis Example 8 (Synthesis of polymer compound 8) 2,3,4,5,6-pentafluorostyrene (manufactured by Aldrich) 5.00 g, diethylacrylamide (manufactured by Kojin Co., Ltd.) 2.62 g, 2- [O- [1′-methylpropylideneamino] carboxyamino ] 1.24 g of ethyl-methacrylate (made by Showa Denko, trade name “Karenz MOI-BM”), 0.04 g of 2,2′-azobis (2-methylpropionitrile), 2,3,4,5,6- 13.35 g of pentafluorotoluene (manufactured by Aldrich) is placed in a 50 ml pressure vessel (manufactured by ACE), bubbled with argon, sealed, polymerized in an oil bath at 60 ° C. for 24 hours, and expressed by the following formula: A 2,3,4,5,6-pentafluorotol
  • Example 1 (Production of organic thin-film transistor insulating layer composition and field-effect organic thin-film transistor) 10 ml sample bottle of 2.00 g of octafluorotoluene solution of polymer compound 1 obtained in Synthesis Example 1, 2.58 g of octafluorotoluene solution of polymer compound 2 obtained in Synthesis Example 2 and 4.00 g of octafluorotoluene And dissolved with stirring to prepare a uniform coating solution as a composition for an organic thin film transistor insulating layer.
  • the obtained coating solution is filtered using a membrane filter having a pore size of 0.2 ⁇ m, spin-coated on a glass substrate with a chromium electrode, and then baked on a hot plate at 220 ° C. for 30 minutes to obtain a gate insulating layer. It was.
  • the polymer compound 3 was dissolved in chloroform as a solvent to prepare a solution (organic semiconductor composition) having a concentration of 0.5% by weight, and this was filtered through a membrane filter to prepare a coating solution. .
  • the obtained coating solution is applied on the gate insulating layer by a spin coating method to form an active layer having a thickness of about 60 nm, and then, on the active layer by a vacuum deposition method using a metal mask,
  • a field effect organic thin film transistor was manufactured by forming a source electrode and a drain electrode (having a laminated structure in the order of fullerene and gold from the active layer side) having a channel length of 20 ⁇ m and a channel width of 2 mm.
  • the field effect organic thin film transistor thus fabricated has the transistor characteristics of a vacuum probe (BCT22MDC-5-5) under the condition that the gate voltage Vg is changed to 0 to ⁇ 40 V and the source-drain voltage Vsd is changed to 0 to ⁇ 40 V.
  • Table 1 shows the results of measurement using HT-SCU (manufactured by Nagase Electronic Equipments Service Co., LTD).
  • the hysteresis of the organic thin film transistor is that the threshold voltage Vth1 when the source-drain voltage Vsd is -40V and the gate voltage Vg is changed from 0V to -40V and the threshold voltage when the gate voltage Vg is changed from -40V to 0V. It was expressed as a voltage difference from the voltage Vth2.
  • Example 2 (Production of field-effect organic thin-film transistors) Lumiflon LF200F (Asahi Glass Co., Ltd.) 5.00g was dissolved in 7.5g of 2,3,4,5,6-pentafluorotoluene to prepare Lumiflon 2,3,4,5,6-pentafluorotoluene 1.00 g of solution, 2.76 g of octafluorotoluene solution of polymer compound 1 obtained in Synthesis Example 1 and 3.00 g of 2,3,4,5,6-pentafluorotoluene are placed in a 10 ml sample bottle and dissolved by stirring. did. The obtained uniform solution was filtered through a membrane filter having a pore diameter of 0.45 ⁇ m to prepare an overcoat insulating layer coating solution containing a resin composition for an organic thin film transistor insulating layer.
  • Lumiflon LF200F is a polymer compound having a repeating unit represented by the formula (2-a) and a repeating unit represented by the formula (3-a).
  • X represents a fluorine atom, a chlorine atom or a trifluoromethyl group.
  • R 4 represents an alkylene group.
  • the polymer compound 7 was dissolved in xylene as a solvent to prepare a solution (organic semiconductor composition) having a concentration of 0.5% by weight, and this was filtered through a membrane filter to prepare a coating solution.
  • the obtained coating solution of the polymer compound 7 is applied on a bottom gate bottom contact element (manufactured by Kyodo Inter) by a spin coating method, and baked at 200 ° C. for 10 minutes in nitrogen to have an active layer having a thickness of about 60 nm. Formed.
  • the overcoat insulating layer coating solution is applied onto the obtained active layer by a spin coating method and baked at 200 ° C. for 30 minutes in nitrogen to form an overcoat insulating layer having a thickness of about 6 ⁇ m.
  • a field effect organic thin film transistor was fabricated and the transistor characteristics were measured.
  • Example 3 (Production of field-effect organic thin-film transistors) Instead of the octafluorotoluene solution of polymer compound 1, 1.54 g of 2,3,4,5,6-pentafluorotoluene solution of polymer compound 4 is used, and 2,3,4,5,6-penta added.
  • a field effect organic thin film transistor was prepared in the same manner as in Example 2 except that the weight of fluorotoluene was set to 1.50 g, and the transistor characteristics were measured. The thickness of the overcoat insulating layer was about 6 ⁇ m.
  • Example 4 (Production of field-effect organic thin-film transistors)
  • octafluorotoluene solution of polymer compound 1 1.41 g of 2,3,4,5,6-pentafluorotoluene solution of polymer compound 5 is used, and 2,3,4,5,6-penta added.
  • a field effect organic thin film transistor was prepared in the same manner as in Example 2 except that the weight of fluorotoluene was set to 1.50 g, and the transistor characteristics were measured. The thickness of the overcoat insulating layer was about 6 ⁇ m.
  • Example 5 (Production of field-effect organic thin-film transistors) Instead of the octafluorotoluene solution of polymer compound 1, 1.43 g of 2,3,4,5,6-pentafluorotoluene solution of polymer compound 6 is used, and 2,3,4,5,6-penta added.
  • a field effect organic thin film transistor was prepared in the same manner as in Example 2 except that the weight of fluorotoluene was set to 1.50 g, and the transistor characteristics were measured. The thickness of the overcoat insulating layer was about 6 ⁇ m.
  • Example 6 (Production of field-effect organic thin-film transistors) Instead of the octafluorotoluene solution of polymer compound 1, 1.38 g of 2,3,4,5,6-pentafluorotoluene solution of polymer compound 8 is used, and 2,3,4,5,6-penta added.
  • a field effect organic thin film transistor was prepared in the same manner as in Example 2 except that the weight of fluorotoluene was changed to 2.00 g, and the transistor characteristics were measured. The thickness of the overcoat insulating layer was about 6 ⁇ m.
  • Example 7 (Production of field-effect organic thin-film transistors)
  • octafluorotoluene solution of polymer compound 1 1.47 g of 2,3,4,5,6-pentafluorotoluene solution of polymer compound 9 is used, and 2,3,4,5,6-penta added.
  • a field effect organic thin film transistor was prepared in the same manner as in Example 2 except that the weight of fluorotoluene was changed to 2.00 g, and the transistor characteristics were measured.
  • the thickness of the overcoat insulating layer was about 6 ⁇ m.
  • a field effect organic thin film transistor was manufactured in the same manner as in Example 1 except that a gate insulating layer was formed using a composition consisting of 0.113 g and 7.00 g of 2-heptanone (trade name: TAZ-108, manufactured by Co., Ltd.). The transistor characteristics were measured and evaluated.
  • Example 2 Manufacture of field-effect organic thin-film transistors
  • Example 2 except that an overcoat insulating layer was formed using a composition comprising 5.00 g of poly (4-vinylphenol-co-methyl methacrylate) (manufactured by Aldrich) and 7.50 g of N, N-dimethylformamide.
  • a field effect organic thin film transistor was prepared, and transistor characteristics were measured and evaluated.
  • the overcoat insulating layer had a thickness of 3.4 ⁇ m.

Landscapes

  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

L'invention concerne une composition à utiliser dans une couche isolante de transistor organique en couche mince, qui permet de fabriquer un transistor organique en couche mince présentant une faible hystérésis et une tension de seuil de faible valeur absolue. Ladite composition contient (A) un composé macromoléculaire comportant un motif répétitif portant un groupe qui contient un atome de fluor, et (B) un solvant constitué d'un composé organique contenant des atomes de fluor.
PCT/JP2011/057937 2010-04-01 2011-03-30 Composition contenant un solvant organique fluoré pour utilisation dans une couche isolante de transistor organique en couche mince WO2011125690A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/064,685 US8733199B2 (en) 2010-04-01 2011-04-08 Gears and its process of manufacture

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010085030 2010-04-01
JP2010-085030 2010-04-01

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US13/064,685 Continuation US8733199B2 (en) 2010-04-01 2011-04-08 Gears and its process of manufacture

Publications (1)

Publication Number Publication Date
WO2011125690A1 true WO2011125690A1 (fr) 2011-10-13

Family

ID=44762634

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2011/057937 WO2011125690A1 (fr) 2010-04-01 2011-03-30 Composition contenant un solvant organique fluoré pour utilisation dans une couche isolante de transistor organique en couche mince

Country Status (3)

Country Link
JP (1) JP2011228678A (fr)
TW (1) TW201209092A (fr)
WO (1) WO2011125690A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011253990A (ja) * 2010-06-03 2011-12-15 Sony Corp 薄膜トランジスタおよびその製造方法、ならびに電子機器
WO2017141932A1 (fr) * 2016-02-18 2017-08-24 住友化学株式会社 Composé polymère, composition, couche isolante et transistor à couches minces organiques

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5980522B2 (ja) * 2012-02-17 2016-08-31 住友化学株式会社 有機薄膜トランジスタ絶縁層材料
JP6056443B2 (ja) * 2012-12-12 2017-01-11 住友化学株式会社 絶縁層材料及び該絶縁層材料を用いて形成した有機薄膜トランジスタ
JP6561821B2 (ja) * 2015-12-17 2019-08-21 東洋インキＳｃホールディングス株式会社 絶縁膜形成用組成物およびそれを用いたゲート絶縁膜
KR102656151B1 (ko) 2017-09-29 2024-04-08 니폰 제온 가부시키가이샤 포지티브형 레지스트 조성물, 레지스트막 형성 방법, 및 적층체의 제조 방법

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03290412A (ja) * 1990-04-07 1991-12-20 Hitachi Ltd 含フッ素反応性重合体およびその製法
JP2009090637A (ja) * 2007-09-18 2009-04-30 Toppan Printing Co Ltd 有機機能層及び有機機能性素子の製造方法並びに有機機能性素子製造装置
WO2009121672A1 (fr) * 2008-04-03 2009-10-08 Cambridge Display Technology Limited Transistors organiques à film mince
JP2010034342A (ja) * 2008-07-30 2010-02-12 Sumitomo Chemical Co Ltd 半導体素子の製造方法、半導体素子、発光装置、表示装置および駆動用基板
WO2010024238A1 (fr) * 2008-08-28 2010-03-04 住友化学株式会社 Composition de résine, couche d’isolation de grille et transistor à couches minces organiques

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03290412A (ja) * 1990-04-07 1991-12-20 Hitachi Ltd 含フッ素反応性重合体およびその製法
JP2009090637A (ja) * 2007-09-18 2009-04-30 Toppan Printing Co Ltd 有機機能層及び有機機能性素子の製造方法並びに有機機能性素子製造装置
WO2009121672A1 (fr) * 2008-04-03 2009-10-08 Cambridge Display Technology Limited Transistors organiques à film mince
JP2010034342A (ja) * 2008-07-30 2010-02-12 Sumitomo Chemical Co Ltd 半導体素子の製造方法、半導体素子、発光装置、表示装置および駆動用基板
WO2010024238A1 (fr) * 2008-08-28 2010-03-04 住友化学株式会社 Composition de résine, couche d’isolation de grille et transistor à couches minces organiques

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011253990A (ja) * 2010-06-03 2011-12-15 Sony Corp 薄膜トランジスタおよびその製造方法、ならびに電子機器
WO2017141932A1 (fr) * 2016-02-18 2017-08-24 住友化学株式会社 Composé polymère, composition, couche isolante et transistor à couches minces organiques

Also Published As

Publication number Publication date
JP2011228678A (ja) 2011-11-10
TW201209092A (en) 2012-03-01

Similar Documents

Publication Publication Date Title
JP5479817B2 (ja) 有機薄膜トランジスタゲート絶縁層用樹脂組成物、ゲート絶縁層及び有機薄膜トランジスタ
JP5666251B2 (ja) 光及び熱エネルギー架橋性有機薄膜トランジスタ絶縁層材料
JP6034056B2 (ja) 有機薄膜トランジスタ絶縁層材料
WO2012161106A1 (fr) Matériau pour couche d'isolation d'un transistor organique à couches minces
JP5695467B2 (ja) 有機薄膜トランジスタ絶縁層用樹脂組成物、オーバーコート絶縁層及び有機薄膜トランジスタ
WO2011125690A1 (fr) Composition contenant un solvant organique fluoré pour utilisation dans une couche isolante de transistor organique en couche mince
JP6025326B2 (ja) 電子デバイス絶縁層材料、及び電子デバイス
WO2012029700A1 (fr) Composition pour couche isolante d'un transistor en couches minces organique, et transistor en couches minces organique
WO2012108327A1 (fr) Matériau de couche d'isolation de transistor à couche mince organique réticulable par l'énergie lumineuse et thermique
WO2012002436A1 (fr) Matière de couche isolante pour un transistor organique en couche mince et transistor organique en couche mince
JP6056443B2 (ja) 絶縁層材料及び該絶縁層材料を用いて形成した有機薄膜トランジスタ
WO2012108326A1 (fr) Matériau de couche d'isolation de transistor à couche mince organique réticulable par l'énergie lumineuse et thermique
JP5980522B2 (ja) 有機薄膜トランジスタ絶縁層材料
JP2013149860A (ja) 有機薄膜トランジスタ絶縁層材料
JP2013258301A (ja) 有機薄膜トランジスタ絶縁層材料
JP2013064095A (ja) 有機薄膜トランジスタ絶縁層材料
JP2010037462A (ja) ゲート絶縁層用樹脂組成物

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 11765590

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 11765590

Country of ref document: EP

Kind code of ref document: A1