TW201209092A - Composition for organic thin film transistor insulation layer containing fluoro-organic compound - Google Patents

Composition for organic thin film transistor insulation layer containing fluoro-organic compound Download PDF

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Publication number
TW201209092A
TW201209092A TW100111202A TW100111202A TW201209092A TW 201209092 A TW201209092 A TW 201209092A TW 100111202 A TW100111202 A TW 100111202A TW 100111202 A TW100111202 A TW 100111202A TW 201209092 A TW201209092 A TW 201209092A
Authority
TW
Taiwan
Prior art keywords
film transistor
thin film
compound
group
insulating layer
Prior art date
Application number
TW100111202A
Other languages
English (en)
Chinese (zh)
Inventor
Isao Yahagi
Original Assignee
Sumitomo Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Chemical Co filed Critical Sumitomo Chemical Co
Publication of TW201209092A publication Critical patent/TW201209092A/zh

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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/468Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80Constructional details
    • H10K10/88Passivation; Containers; Encapsulations

Landscapes

  • Thin Film Transistor (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Liquid Crystal (AREA)
TW100111202A 2010-04-01 2011-03-31 Composition for organic thin film transistor insulation layer containing fluoro-organic compound TW201209092A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010085030 2010-04-01

Publications (1)

Publication Number Publication Date
TW201209092A true TW201209092A (en) 2012-03-01

Family

ID=44762634

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100111202A TW201209092A (en) 2010-04-01 2011-03-31 Composition for organic thin film transistor insulation layer containing fluoro-organic compound

Country Status (3)

Country Link
JP (1) JP2011228678A (fr)
TW (1) TW201209092A (fr)
WO (1) WO2011125690A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11402753B2 (en) 2017-09-29 2022-08-02 Zeon Corporation Positive resist composition, resist film formation method, and laminate manufacturing method

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5652005B2 (ja) * 2010-06-03 2015-01-14 ソニー株式会社 薄膜トランジスタおよびその製造方法、ならびに電子機器
JP5980522B2 (ja) * 2012-02-17 2016-08-31 住友化学株式会社 有機薄膜トランジスタ絶縁層材料
JP6056443B2 (ja) * 2012-12-12 2017-01-11 住友化学株式会社 絶縁層材料及び該絶縁層材料を用いて形成した有機薄膜トランジスタ
JP6561821B2 (ja) * 2015-12-17 2019-08-21 東洋インキScホールディングス株式会社 絶縁膜形成用組成物およびそれを用いたゲート絶縁膜
JP6884745B2 (ja) * 2016-02-18 2021-06-09 住友化学株式会社 高分子化合物、組成物、絶縁層および有機薄膜トランジスタ

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03290412A (ja) * 1990-04-07 1991-12-20 Hitachi Ltd 含フッ素反応性重合体およびその製法
JP2009090637A (ja) * 2007-09-18 2009-04-30 Toppan Printing Co Ltd 有機機能層及び有機機能性素子の製造方法並びに有機機能性素子製造装置
GB2458940B (en) * 2008-04-03 2010-10-06 Cambridge Display Tech Ltd Organic thin film transistors
JP5441374B2 (ja) * 2008-07-30 2014-03-12 住友化学株式会社 半導体素子の製造方法、半導体素子、発光装置、表示装置および駆動用基板
US8476621B2 (en) * 2008-08-28 2013-07-02 Sumitomo Chemical Company, Limited Resin composition, gate insulating layer, and organic thin film transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11402753B2 (en) 2017-09-29 2022-08-02 Zeon Corporation Positive resist composition, resist film formation method, and laminate manufacturing method
TWI782092B (zh) * 2017-09-29 2022-11-01 日商日本瑞翁股份有限公司 正型光阻組成物、光阻膜形成方法及堆疊體的製造方法

Also Published As

Publication number Publication date
JP2011228678A (ja) 2011-11-10
WO2011125690A1 (fr) 2011-10-13

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