JP5695467B2 - 有機薄膜トランジスタ絶縁層用樹脂組成物、オーバーコート絶縁層及び有機薄膜トランジスタ - Google Patents

有機薄膜トランジスタ絶縁層用樹脂組成物、オーバーコート絶縁層及び有機薄膜トランジスタ Download PDF

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JP5695467B2
JP5695467B2 JP2011073795A JP2011073795A JP5695467B2 JP 5695467 B2 JP5695467 B2 JP 5695467B2 JP 2011073795 A JP2011073795 A JP 2011073795A JP 2011073795 A JP2011073795 A JP 2011073795A JP 5695467 B2 JP5695467 B2 JP 5695467B2
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film transistor
organic thin
insulating layer
thin film
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JP2011225854A (ja
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公 矢作
公 矢作
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Sumitomo Chemical Co Ltd
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Sumitomo Chemical Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C08F212/16—Halogens
    • C08F212/20—Fluorine
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/06—Hydrocarbons
    • C08F212/08—Styrene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/34—Esters containing nitrogen, e.g. N,N-dimethylaminoethyl (meth)acrylate
    • C08F220/343—Esters containing nitrogen, e.g. N,N-dimethylaminoethyl (meth)acrylate in the form of urethane links
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Polyurethanes Or Polyureas (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
JP2011073795A 2010-04-01 2011-03-30 有機薄膜トランジスタ絶縁層用樹脂組成物、オーバーコート絶縁層及び有機薄膜トランジスタ Expired - Fee Related JP5695467B2 (ja)

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JP2011073795A JP5695467B2 (ja) 2010-04-01 2011-03-30 有機薄膜トランジスタ絶縁層用樹脂組成物、オーバーコート絶縁層及び有機薄膜トランジスタ

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JP2010085031 2010-04-01
JP2010085031 2010-04-01
JP2011073795A JP5695467B2 (ja) 2010-04-01 2011-03-30 有機薄膜トランジスタ絶縁層用樹脂組成物、オーバーコート絶縁層及び有機薄膜トランジスタ

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JP2011225854A JP2011225854A (ja) 2011-11-10
JP5695467B2 true JP5695467B2 (ja) 2015-04-08

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JP (1) JP5695467B2 (fr)
TW (1) TW201202274A (fr)
WO (1) WO2011125691A1 (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013149861A (ja) * 2012-01-20 2013-08-01 Sumitomo Chemical Co Ltd 有機薄膜トランジスタ絶縁層材料
CN104105726B (zh) * 2012-02-15 2017-05-31 默克专利股份有限公司 用于有机电子器件的平坦化层
JP5980522B2 (ja) * 2012-02-17 2016-08-31 住友化学株式会社 有機薄膜トランジスタ絶縁層材料
JP6056443B2 (ja) * 2012-12-12 2017-01-11 住友化学株式会社 絶縁層材料及び該絶縁層材料を用いて形成した有機薄膜トランジスタ
CN106465508B (zh) * 2014-06-09 2018-05-25 旭硝子株式会社 拒墨剂、负型感光性树脂组合物、分隔壁和光学元件
TWI569327B (zh) * 2015-07-03 2017-02-01 友達光電股份有限公司 薄膜電晶體與其製作方法
JP6884746B2 (ja) * 2016-02-18 2021-06-09 住友化学株式会社 高分子化合物、組成物及び有機薄膜トランジスタ
JP6884745B2 (ja) * 2016-02-18 2021-06-09 住友化学株式会社 高分子化合物、組成物、絶縁層および有機薄膜トランジスタ
TWI629797B (zh) * 2017-05-09 2018-07-11 友達光電股份有限公司 薄膜電晶體及其光電裝置
CN110240671B (zh) * 2018-03-09 2021-11-19 浙江省化工研究院有限公司 一种氟树脂及其制备方法
JP7211269B2 (ja) * 2019-06-07 2023-01-24 Jnc株式会社 樹脂組成物、有機薄膜積層構造および有機薄膜トランジスタ

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61101083A (ja) * 1984-10-24 1986-05-19 Matsushita Electric Ind Co Ltd 太陽電池モジユ−ル
JPH03290412A (ja) * 1990-04-07 1991-12-20 Hitachi Ltd 含フッ素反応性重合体およびその製法
GB2458940B (en) * 2008-04-03 2010-10-06 Cambridge Display Tech Ltd Organic thin film transistors
JP5199752B2 (ja) * 2008-06-30 2013-05-15 住友化学株式会社 有機薄膜トランジスタ及びその製造方法、並びにこの有機トランジスタを用いたディスプレイ用部材及びディスプレイ
JP5479817B2 (ja) * 2008-08-28 2014-04-23 住友化学株式会社 有機薄膜トランジスタゲート絶縁層用樹脂組成物、ゲート絶縁層及び有機薄膜トランジスタ

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TW201202274A (en) 2012-01-16
JP2011225854A (ja) 2011-11-10

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