WO2011122078A1 - Élément magnétorésistif, dispositif à disque magnétique et dispositif de mémoire magnétorésistive - Google Patents

Élément magnétorésistif, dispositif à disque magnétique et dispositif de mémoire magnétorésistive Download PDF

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WO2011122078A1
WO2011122078A1 PCT/JP2011/051167 JP2011051167W WO2011122078A1 WO 2011122078 A1 WO2011122078 A1 WO 2011122078A1 JP 2011051167 W JP2011051167 W JP 2011051167W WO 2011122078 A1 WO2011122078 A1 WO 2011122078A1
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layer
magnetoresistive element
ferromagnetic
magnetoresistive
metalloid
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真 籔内
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株式会社日立製作所
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C12/00—Alloys based on antimony or bismuth
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C13/00—Alloys based on tin
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C19/00—Alloys based on nickel or cobalt
    • C22C19/07—Alloys based on nickel or cobalt based on cobalt
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C38/00—Ferrous alloys, e.g. steel alloys
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/04—Alloys based on a platinum group metal
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/06—Alloys based on silver
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
    • H01F10/193—Magnetic semiconductor compounds
    • H01F10/1936—Half-metallic, e.g. epitaxial CrO2 or NiMnSb films
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/26—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers
    • H01F10/265—Magnetic multilayers non exchange-coupled
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
    • H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F41/305—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices applying the spacer or adjusting its interface, e.g. in order to enable particular effect different from exchange coupling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type

Definitions

  • the present invention relates to a magnetoresistive element having an appropriate sheet resistance and a high magnetoresistance ratio.
  • the magnetic device according to the present invention includes, for example, a magnetoresistive element as a reproducing head, a magnetic disk device applied to the reproducing head, a magnetoresistive memory device using the magnetoresistive element as a memory element, and a magnetic orientation sensor equipped with the magnetoresistive element including.
  • a giant magnetoresistive (GMR) magnetoresistive (GMR) effect head or a tunnel magnetoresistive (TMR) magnetoresistive (TMR) effect head is used for a reproducing head of a hard disk drive (HDD: Hard Disk Drive) device.
  • HDD Hard Disk Drive
  • the magnetoresistive head has a structure in which an antiferromagnetic layer / a fixed layer / a nonmagnetic intermediate layer / a free layer are laminated in order from the substrate side.
  • the fixed layer is a layer that fixes magnetization by exchange coupling with the antiferromagnetic layer.
  • the free layer is a layer that responds to an external magnetic field.
  • the relative magnetization direction of the fixed layer and the free layer changes due to the magnetization reversal of the free layer.
  • the magnetoresistive head detects an external magnetic field by a change in electrical resistance when the magnetization direction changes.
  • the rate of change in magnetoresistance (MR) is dramatically improved by applying MgO to the insulating layer.
  • MgO magnetoresistance
  • an MR change rate of 206% can be obtained (Non-Patent Document 1).
  • the TMR head uses an insulator for the tunnel junction. For this reason, while the output is high, the high resistance acts disadvantageously in increasing the speed of rotation. For this reason, further resistance reduction is required.
  • the CPP-GMR head adopts a structure in which an ultrathin metal layer (Cu, etc.) of about several nanometers is formed between two magnetic layers, and current flows perpendicularly to the film surface. For this reason, in this type of head, it is necessary to detect a very small resistance change that occurs at intervals of about nm. As a result, there is a problem that the MR change rate is small and the output is very small. Further, when the resistance value is very small, it is affected by spin torque noise. For this reason, it has been a problem to increase the resistance value to some extent.
  • Cu ultrathin metal layer
  • a multilayer structure of the element can be considered.
  • the MR ratio can be increased by multilayering.
  • a narrow read gap is necessary to increase the resolution of the magnetic head. For this reason, a structure in which each element is simply multilayered is not suitable for solving the problem.
  • the CPP-GMR intermediate layer is a composite layer of a nonmagnetic metal and an insulator, and the insulator has pinholes with low electrical resistance.
  • the insulating layer having pinholes is referred to as a screen layer. If the current is narrowed down using this screen layer, a high output can be obtained.
  • the CPP-GMR adapted to the screen layer has a problem that it becomes difficult to control pinholes in the screen layer, while the output becomes high. This is because the resistance value varies depending on the size and number of pinholes existing in the screen layer. Moreover, as the element size is reduced, the variation becomes remarkable, which becomes a practical problem.
  • the flowing current is narrowed down, and a current having a large current density flows only in the pinhole. When the current density becomes high, heat is generated, migration occurs, and the element deteriorates.
  • TMR using an insulator as an intermediate layer needs to have low resistance
  • CPP-GMR using metal as an intermediate layer needs to have high resistance.
  • the inventor has come to the idea that it is desirable to apply a material having intermediate characteristics between these two materials to the intermediate layer.
  • metalloids such as Sb and Bi as materials that exhibit electrical conductivity characteristics between insulators and metals.
  • Metalloid as shown in FIG. 3 (a), the Fermi energy E F is the valence band (shown by the parabolic convex upward.) And the top of the conduction band (in the figure, downwardly convex It has an electronic state that crosses the lowermost part.
  • a metalloid is characterized by its very few electronic states at the Fermi level when compared to metals.
  • the carrier density of semimetal is on the order of 10 18 to 10 20 cm -3 .
  • the semimetal is known as a material system having a low carrier density.
  • Non-Patent Document 2 is a document disclosing a CPP-GMR structure using such a semimetal for the intermediate layer.
  • Non-Patent Document 2 shows a calculation model of a semimetal, and Sb, Bi, FeSi, and CoSi are proposed.
  • Bi and Sb have a complex structure such as rhombohedral structure and FeSi has a B20 type structure. For this reason, lattice matching is poor with respect to Fe, Co, and Ni (fcc structure, bcc structure, etc.) that are general ferromagnetic metals.
  • materials such as Bi are materials having a very low melting point (melting point: 271 ° C.), and there is a concern of alloying with other materials and deterioration due to migration.
  • the lattice matching with the fixed layer and the free layer is excellent, but also a high sensitivity magnetoresistive element composed of an intermediate layer having an excellent area uniformity and a high magnetoresistance ratio.
  • the purpose is to provide.
  • the present invention provides a magnetoresistive element having the following layer structure.
  • the intermediate layer is divided into L2 1 (full Heusler) structure, B2 (CsCl-type) structure, A2 structure, C1 b (half Heusler) structure or It is formed of a compound material having an elemental composition having a B1 (NaCl-type) structure and having semi-metallic conduction characteristics (carrier density on the order of 10 18 to 10 20 cm -3 ).
  • FIG. 1 shows an L2 1 structure (FIG. 1 (a)), a B2 structure (FIG. 1 (b)), an A2 structure (FIG. 1 (c)), a C1 b structure (FIG. 1 (d)), and a B1 structure (see FIG. 1).
  • 1 (f)) is a schematic diagram. These metalloids dramatically improve lattice matching with ferromagnetic metals such as Fe and FeCo alloys and Heusler ferromagnetic alloys, compared to rhombohedral metalloids such as Bi and Sb.
  • the ferromagnetic metal is Fe of the bcc structure and the metalloid intermediate layer is Fe 2 VAl of the L2 1 structure.
  • Fe has the bcc structure shown in FIG. When this bcc structure is three-dimensionally doubled, it becomes the same as the A2 structure shown in FIG. Therefore, the difference in lattice constant from the L2 1 structure shown in FIG. 1 (a) is only about 0.5%. From this, it can be seen that the lattice matching is good.
  • the ferromagnetic metal layer is made of an alloy of Co or Ni and the ferromagnetic metal is made of a ferromagnetic Heusler alloy Co 2 MnSi or Fe 3 Si having a D0 3 structure, it is combined with an intermediate layer having good lattice matching. A structure with extremely good lattice matching can be produced.
  • the magnetoresistive element according to the present invention can form a three-layer structure of a fixed layer / intermediate layer / free layer with good matching, a high MR ratio can be realized.
  • the layer structure proposed in the present invention electrons that can be transmitted through the intermediate layer are limited due to the influence of the semi-metal layer that has fewer electronic states at the Fermi level than the metal.
  • the transmission of electrons can be restricted when the metalloid layer is Fe 2 VAl.
  • FIG. 2 shows a structure obtained by projecting the Fe 2 VAl band structure obtained by the first principle calculation onto a two-dimensional surface. According to the phase diagram in which the band structure of Fe 2 VAl is projected in two dimensions, it can be seen that there are very few states in the wave number space. Further, as shown in Non-Patent Document 3 and the like, the transmittance of electrons in a device having a three-layer structure in which an intermediate layer exists between two electrodes is given by an average value of transmittance depending on the wave number, It is represented by the following formula 1.
  • T ⁇ is the transmittance of the system
  • T k ⁇ is the transmittance depending on the wave number (kx, ky)
  • ⁇ is the energy
  • ⁇ is the spin degree of freedom
  • a is the lattice constant of the crystal It is.
  • the transmittance is very small due to the influence of the electronic state. Therefore, in the structure of the present invention, the electron transmittance can be drastically reduced as compared with the case where an ordinary metal is used for the intermediate layer, and even in an ultrathin film having a thickness less than the mean free path (about several nm), the area resistance is reduced. Can be made high enough.
  • the insulator is an intermediate layer (in the case of TMR)
  • the electron transmittance decreases exponentially as the film thickness increases. For this reason, in order to realize a sheet resistance equivalent to that of a semimetal, an ultrathin film of 1 nm or less must be realized.
  • the material is greatly different from a material having no Fermi level state such as an insulator, and a small sheet resistance value equivalent to 1 nm or less can be easily realized.
  • a material having no Fermi level state such as an insulator
  • a small sheet resistance value equivalent to 1 nm or less can be easily realized. Therefore, in the case of the present invention, an appropriate sheet resistance and a high MR ratio can be realized. Therefore, when the magnetoresistive element according to the present invention is used for a magnetic head, a structure satisfying the requirement for a narrow read gap necessary for improving the resolution can be easily formed.
  • Fig. 3 (a) shows a schematic diagram of a semi-metallic band structure.
  • the semimetal has a state of a valence band and a conduction band slightly near the Fermi level.
  • the conduction characteristics of a semimetal are susceptible to its band structure and Fermi level position due to doping. For this reason, the conduction characteristics of the semimetal can be easily changed by doping.
  • an element having similar properties such as a family element is doped, only the band structure can be changed while the Fermi level is fixed as shown in FIGS. As a result, the number of states at the Fermi level can be increased or decreased.
  • the carrier density of holes or electrons can be changed while the band structure is fixed. That is, only the Fermi level can be changed. Even in this case, the number of states at the Fermi level can be increased or decreased.
  • the state near the Fermi level can be controlled, and the sheet resistance can be adjusted by modulating the state contributing to transmission.
  • the current can be appropriately reduced without forming a pinhole structure like a screen layer.
  • metalloid used for the intermediate layer, a uniform thin film can be used, so there is no high current density region due to pinholes like the screen layer, and generation of heat and electromigration are suppressed. Can do.
  • the figure which shows the example of a cross-section of the principal part of CPP-GMR in an Example. 1 is a diagram showing a schematic configuration example of a magnetic disk device.
  • any compound may be used as long as the compound has a composition in which the total valence number is close to 24 from the relationship between the number of valence electrons and elements shown in Table 1.
  • the metalloid layer contains at least one or more transition elements in a total range of about 75 atomic%.
  • the semi-metal having a C1 b structure for example MgAgAs, NiTiSn, CoTiSb, FeVSb, ZrNiSn, the half-Heusler alloy having a composition in the vicinity of ZrCoSb.
  • the half-Heusler alloy exhibits a Slater-Pauling behavior like the full-Heusler alloy, and it can be expected that all compounds having the same total number of valence electrons as FeVSb exhibit similar properties.
  • the total number of valence electrons is 18.
  • a compound having a composition such as MgAgAs can also be used.
  • the metalloid layer contains at least one or more transition elements in a total range of about 33 to about 66 atomic%.
  • Examples of semimetals having a B1 structure include ScSb 1- ⁇ As ⁇ (0.0 ⁇ ⁇ ⁇ 1.0), YSb 1- ⁇ As ⁇ (0.0 ⁇ ⁇ ⁇ 1.0), LnSb 1- ⁇ As ⁇ (Ln is a lanthanoid: La , Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu), (0.0 ⁇ ⁇ ⁇ 1.0).
  • the metalloid layer contains at least one or more transition elements in a total range of about 50 atomic%.
  • the electron transmittance in the semimetal layer can be controlled by doping the semimetal layer.
  • the doping to the semimetal layer in the present invention will be described.
  • the metalloid layer having the L2 1 structure, B2 structure, and A2 structure in the present invention has a total valence electron number of 24 based on the calculation of the valence number shown in Table 1 in the stoichiometric composition of X ′ 2 Y′Z ′.
  • the case is fundamental.
  • a doping technique for keeping the total number of valence electrons constant can be given.
  • Fe 2 VAl will be described as an example.
  • a part of V (vanadium) atoms is substituted with Nb atoms so that the total number of valence electrons is constant.
  • Fe 2 V 0.8 Nb 0.2 Al the total number of valence electrons is 24, and the total number of valence electrons is not changed.
  • the electronic state near the Fermi level of the compound after doping with Nb atoms changes, and the electronic state contributing to the electron transmittance can be controlled. Further, if a part of V (vanadium) atoms is replaced with an element having a different atomic radius, the lattice constant changes, and the lattice constant can be controlled by adjusting the doping amount.
  • Y ′ in X ′ 2 Y′Z ′ has been replaced with an element having the same number of valence electrons, but element X ′ or element Z ′ can also be replaced.
  • the total number of valence electrons is 18 based on the calculation of the number of valence electrons shown in Table 1 in the stoichiometric composition of X′Y′Z ′. Therefore, similarly to the L2 1 structure, in the C1 b structure, X′Y′Z ′ can be replaced by an element having the same number of valence electrons.
  • the method of substituting the element Y ′ in X ′ 2 Y′Z ′ with an element having the same number of valence electrons has been described, but the element X ′ or the element Z ′ can also be replaced. If the total number of electrons deviates more than 24, it becomes a non-magnetic metal or ferromagnetic metal property, and semi-metallic conduction characteristics cannot be obtained. Therefore, it is desirable to dope so that the total number of valence electrons is in the range of 23.5 to 24.5. For example, it is desirable that the total number of valence electrons after doping falls within a range of about ⁇ 0.5 or about 2% of the total number of valence electrons before doping.
  • the total number of valence electrons is in the range of 17.8 to 18.2 near 18 by substituting each element of X'Y'Z 'with an element having a different valence number. It is desirable to dope like this. For example, it is desirable that the total number of valence electrons after doping falls within a range of change of about ⁇ 0.2 or about 1.1% of the total number of valence electrons before doping.
  • doping with a semi-metal having a B1 structure for example, ScSb 1- ⁇ As ⁇ , YSb 1- ⁇ As ⁇ , LnSb 1- ⁇ As ⁇ (0.0 ⁇ ⁇ ⁇ 1.0), for example, Mg, Ca, Sr, Ba It is desirable to use at least one of Ti, Zr, Hf, C, Si, Ge, Sn, N, P, O, S, Se, and Te. desirable.
  • the metalloid layer contains at least one kind of transition element in a total range of about 30 to 80 atomic%.
  • the material of the ferromagnetic layer is not particularly limited. Therefore, for example, a ferromagnetic metal such as Fe, Co, and Ni, an alloy thereof, and FeCoB can be used for the ferromagnetic layer. If a ferromagnetic Heusler alloy with a spin polarization such as Co 2 MnAs, Co 2 MnSi, Co 2 FeSi, Ru 2 MnSi, or Mn 2 VAl is used for the ferromagnetic layer, a structure with good lattice matching can be obtained. It can be formed.
  • a ferromagnetic Heusler alloy with a spin polarization such as Co 2 MnAs, Co 2 MnSi, Co 2 FeSi, Ru 2 MnSi, or Mn 2 VAl
  • a CPP-GMR structure can be obtained by laminating the above-described semimetal and a semimetal layer 20 doped with another metal in the middle of the ferromagnetic fixed layer 210 and the ferromagnetic free layer 200.
  • the ferromagnetic pinned layer refers to a layer containing a ferromagnetic material whose magnetization direction is fixed in one direction.
  • a ferromagnetic free layer refers to a layer containing a ferromagnetic material whose magnetization direction changes in response to an external magnetic field.
  • Composite metalloid layer a composite metalloid layer that can be used as an intermediate layer between the fixed layer and the free layer will be described.
  • the properties of the metalloid layer can be changed by doping the metalloid layer.
  • a semi-metal layer having different properties can be laminated in a multilayer structure to form a composite semi-metal layer, which can be used as an intermediate layer.
  • FIG. 4B shows a composite metalloid layer 24 in which two metalloid layers are laminated.
  • a semimetal layer 21 having a total valence electron of 23.8 is employed as the semimetal layer 1
  • a semimetal layer 22 having a total valence electron number of 24.2 is employed as the semimetal layer 2.
  • FIG. 4 (c) shows a composite metalloid layer 24 in which three metalloid layers are laminated.
  • a semi-metal layer 21 with a total valence electron of 23.8 is adopted as the semi-metal layer 1
  • a semi-metal layer 22 with a total valence electron number of 24 is adopted as the semi-metal layer 2
  • the total valence electron number is as the semi-metal layer 3.
  • the 24.2 metalloid layer 23 is employed.
  • the composite metalloid layer used as the intermediate layer is not limited to the two-layer structure and the three-layer structure as long as it has the structure of the present invention, and may be a multilayer structure of four or more layers. However, it is desirable that the thickness of the entire intermediate layer, which is the sum of the thicknesses of the layers, is 1 nm or more and 10 nm or less.
  • a composite metalloid layer having a concentration gradient layer When the metalloid layer and the ferromagnetic layer form an interface, a layer having a concentration gradient between the ferromagnetic layer and the metalloid layer can be formed.
  • a case where Fe 2 VAl is used for the metalloid layer and Fe 3 Al is used for the ferromagnetic layer will be described.
  • the concentration gradient layer can be formed at the boundary between the semimetal layer and the ferromagnetic layer by forming a layer having different atomic diffusion or atomic% at the interface by heat treatment or the like.
  • Such a concentration gradient layer 220 can be produced by a heat treatment after forming a ferromagnetic / metalloid interface.
  • the concentration gradient layer 220 can be produced by adjusting the amount of sputtering simultaneously or alternately.
  • the above-mentioned crystal structure and multilayer structure can be easily confirmed by observing a lattice image with a cross-sectional TEM (Transmission Electron Miloscop) or the like. Further, in the electron beam diffraction image, it can be confirmed from the spot-like pattern or the ring-like pattern whether it has a single crystal crystal structure or a polycrystalline crystal structure.
  • the multilayer structure and composition distribution can be confirmed using EDX (Energy Dispersive X-ray Spectroscopy), SIMS (Secondary Ionization Mass Mass Spectrometer), X-ray photoelectron spectroscopy and the like.
  • the characteristics of the semi-metal can be confirmed by measuring the sheet resistance in the CPP-GMR structure and determining whether the intermediate layer can have a higher sheet resistance than a normal metal (for example, Cu).
  • the characteristics of the semimetal are that a thin film having the same composition as the semimetal layer is formed on a general substrate (for example, a Si substrate) by a thin film preparation method such as sputtering, and the electric resistance of the thin film is measured and the Hall effect is measured. It can be confirmed by evaluation of carrier density by measurement.
  • the mechanism of electron conduction control by the semimetal according to the present invention is different from that for limiting the region where current flows in real space such as a screen layer.
  • the metalloid according to the present invention by forming a ferromagnetic / metalloid junction with good lattice matching, current flows through the entire thin film in real space, while the conduction channel is limited in wavenumber space. .
  • Example 1 A first embodiment of the present invention will be described.
  • an Si substrate having a thermal oxide film on the substrate surface was used to produce an electrode, and then the main part of the CPP-GMR film was produced on the electrode.
  • FIG. 6A shows a schematic diagram of a cross-sectional structure of a main portion of the magnetoresistive element according to this example. Details of the main part of the produced magnetoresistive element are as shown in the following materials and film thicknesses.
  • Example 2 A second embodiment of the present invention will be described.
  • the main part of the CPP-GMR film was formed on the electrode.
  • the cross-sectional structure in the second embodiment is the same as that in FIG. Details of the main part of the produced magnetoresistive element are as shown in the following materials and film thicknesses.
  • the lattice constant of Heusler ferromagnetic metal Co 2 CrAl is 5.73 mm, and the lattice constant of semimetal Fe 2 VAl is 5.76 mm.
  • the difference in lattice constant is about 0.5%, and a structure with very good lattice matching can be produced.
  • Example 3 A third embodiment of the present invention will be described. Also in this example, as in Example 1, the main part of the CPP-GMR film is formed on the electrode. The cross-sectional structure in the third embodiment is also the same as that shown in FIG. Details of the main part of the produced magnetoresistive element are as shown in the following materials and film thicknesses.
  • Example 4 A fourth embodiment of the present invention will be described. Also in this example, as in Example 1, the main part of the CPP-GMR film is formed on the electrode.
  • FIG. 6B shows a schematic diagram of a cross-sectional structure of the main part of the magnetoresistive element according to this example. Details of the main part of the produced magnetoresistive element are as shown in the following materials and film thicknesses.
  • the produced magnetoresistive element had a sheet resistance of 0.25 ⁇ m 2 and an MR ratio of 100%. If a magnetic layer different from the ferromagnetic pinned layer or the free layer such as the interface magnetic layer 270 is formed between the ferromagnetic pinned layer and the nonmagnetic metal Ru or Cu as in this embodiment, the ferromagnetic layer It is possible to prevent diffusion of atoms constituting the fixed layer. Therefore, in this embodiment, an interfacial magnetic layer may be formed at the interface where the ferromagnetic pinned layer and the free layer are joined to the nonmagnetic metal. In addition to the above example, NiFe or the like can be used for the interface magnetic layer.
  • Example 5 A fifth embodiment of the present invention will be described. Also in this example, as in Example 1, the main part of the CPP-GMR film is formed on the electrode.
  • FIG. 6C is a schematic diagram of a cross-sectional structure of the main part of the magnetoresistive element according to the third example. Details of the main part of the produced magnetoresistive element are as shown in the following materials and film thicknesses.
  • Example 6 A sixth embodiment of the present invention will be described. Also in this example, as in Example 1, the main part of the CPP-GMR film is formed on the electrode.
  • FIG. 6D is a schematic diagram of a cross-sectional structure of the main part of the magnetoresistive element according to the sixth example. Details of the main part of the produced magnetoresistive element are as shown in the following materials and film thicknesses.
  • Ta 3 nm (underlayer 250) / Ru: 2 nm (underlayer 250) / MnIrCr: 6 nm (antiferromagnetic layer 240) / CoFe: 2 nm (ferromagnetic pinned layer 1 (211)) / Ru: 0.8 nm (antiparallel coupling layer 230) / CoFe: 0.5 nm (interface magnetic layer 270) / Co 2 CrAl: 4 nm (ferromagnetic pinned layer 2 (212)) / Fe 2 V 0.8 Ti 0.2 Al: 1 nm (metalloid layer 1 (21)) / Fe 2 VAl: 1 nm (metalloid layer 2 (22)) / Fe 2 V 0.8 Cr 0.2 Al: 1 nm (metalloid layer 3 (23)) / Co 2 MnSi: 2 nm (ferromagnetic free layer 200) / CoFe: 0.5 nm (interface magnetic layer 270) / Cu: 2 n
  • Example 7 In the above-described embodiments, the case where the L2 1 structure is the main material in the metalloid layer has been described. However, a compound having a C1 b structure and a B1 structure controlled to the materials and compositions described above may be used for the semimetal layer.
  • Example 8 In the above-described embodiments, the case where a CoFe alloy or a full Heusler ferromagnetic alloy is mainly used for the ferromagnetic fixed layer and the free layer has been described. However, other half-Heusler ferromagnetic metals and other ferromagnetic metals may be used as the ferromagnetic fixed layer and the free layer.
  • Example 9 In the above-described embodiment, the case where Ta or Ru is used for the base layer has been described. However, a single layer film such as Al, Cu, Cr, Fe, Nb, Hf, Ni, Ta, Ru, NiFe, NiCr, or NiFeCr or a multilayer film of these materials may be used as the underlayer.
  • a single layer film such as Al, Cu, Cr, Fe, Nb, Hf, Ni, Ta, Ru, NiFe, NiCr, or NiFeCr or a multilayer film of these materials may be used as the underlayer.
  • Example 10 In the above-described embodiment, the case where MnIrCr (6 nm) is used for the antiferromagnetic layer has been described. However, MnIr, MnPt, NiMn, FeMn and other antiferromagnetic materials may be used as the antiferromagnetic layer.
  • Example 11 In the above description, the case where the magnetoresistive element according to the invention is applied to a magnetic reproducing head using CPP-GMR has been mainly described. However, the magnetoresistive element according to the invention can also be applied to various magnetic devices using CPP-GMR elements. Specifically, the present invention can be applied to various sensors such as a nonvolatile memory such as a magnetic random access memory (MRAM) and a magnetic orientation sensor.
  • MRAM magnetic random access memory
  • MRAM magnetic random access memory
  • FIG. 7 a structural example of a magnetic disk device (FIG. 7) and an MRAM (FIG. 8) in which the magnetoresistive element according to the invention is applied to a magnetic reproducing head will be briefly described.
  • FIG. 7 shows a structural example of the magnetic disk device 720.
  • a magnetic disk 702 that is a recording medium is disposed in a housing 701 of the magnetic disk device 720.
  • FIG. 7 shows the case of a multi-disk structure. Accordingly, one magnetic head is disposed on one magnetic disk 702.
  • the magnetic disk 702 is rotated at high speed by a spindle motor 703.
  • a magnetic head 710 is mounted at the tip of the suspension 700, and the root portion of the suspension 700 is connected to the arm 704.
  • the magnetic head 710 includes a recording head and a reproducing head, and the above-described magnetoresistive element is used for the reproducing head.
  • the arm 704 is driven in a plane parallel to the surface of the magnetic disk 702 by a rotary actuator 705.
  • the magnetic head 710 is moved to a predetermined position on the magnetic disk 702 by the drive control of the arm 704 by the rotary actuator 705.
  • the magnetic disk device 720 is also provided with a signal processing LSI (signal processing circuit) 706 for processing write information and read information.
  • LSI signal processing circuit
  • FIG. 8 shows an example of the structure of the MRAM 800.
  • the memory elements 803 made of the magnetoresistive elements described above are formed in a matrix.
  • the ferromagnetic free layer side is connected to the bit line 801
  • the ferromagnetic fixed layer side is connected to the source / drain electrodes (one of the main electrodes) of the selection transistor 804.
  • a gate electrode (control electrode) of the selection transistor 804 is connected to the word line 802.
  • the selection transistor 804 is formed of, for example, a MOSFET.
  • the other source / drain electrode (the other of the main electrodes) of the selection transistor 804 is grounded.
  • the magnetic azimuth sensor can be configured by forming a bridge circuit with four magnetoresistive elements and disposing a thin spiral coil on the surface of the bridge circuit via an insulating film.
  • Metalloid layer 21 Metalloid layer 1 22: Metalloid layer 2 23: Metalloid layer 3 24: Composite metalloid layer 200: Ferromagnetic free layer 211: Ferromagnetic fixed layer 1 212: Ferromagnetic pinned layer 2 220: concentration gradient layer 230: antiparallel coupling layer 240: antiferromagnetic layer 250: underlayer 260: cap layer 270: interface magnetic layer

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Abstract

L'invention concerne un élément magnétorésistif ayant une bonne résistance par unité de surface et un rapport de résistance magnétique élevé. Dans l'élément magnétorésistif, un semimétal ayant au moins une structure sélectionnée parmi une structure L21, une structure B2, une structure A2, une structure C1b et une structure B1 est utilisé comme couche intermédiaire à implanter entre une couche fixée et une couche libre. De cette manière, il devient possible de former une couche intermédiaire homogène ayant une excellente correspondance du réseau avec la couche fixée et la couche libre. Des électrons capables de passer au travers de la couche intermédiaire sont contrôlés par commande de la structure stratifiée de la couche de semimétal ou par dopage. De cette manière, il est possible d'obtenir un rapport de résistance magnétique élevée et une résistance par unité de surface plus élevée que celle des métaux.
PCT/JP2011/051167 2010-03-31 2011-01-24 Élément magnétorésistif, dispositif à disque magnétique et dispositif de mémoire magnétorésistive WO2011122078A1 (fr)

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JP2014049145A (ja) * 2012-08-29 2014-03-17 Hitachi Ltd 磁気ヘッド及び磁気記憶装置
JP2015122476A (ja) * 2013-11-19 2015-07-02 日立金属株式会社 熱電変換材料及びそれを用いた熱電変換モジュール
JP2017004585A (ja) * 2015-06-15 2017-01-05 国立大学法人東北大学 膜面垂直通電型巨大磁気抵抗素子及び磁気デバイス
JP2019012810A (ja) * 2017-06-29 2019-01-24 Tdk株式会社 磁気抵抗効果素子、磁気ヘッド、センサ、高周波フィルタ及び発振素子
JP2019165244A (ja) * 2018-02-22 2019-09-26 Tdk株式会社 磁化回転素子、磁気抵抗効果素子及び磁気メモリ
US20190392972A1 (en) * 2017-06-29 2019-12-26 Tdk Corporation Magnetoresistive effect element, magnetic head, sensor, high frequency filter, and oscillation element
WO2022209531A1 (fr) * 2021-03-31 2022-10-06 国立研究開発法人物質・材料研究機構 Élément magnétorésistif géant courant-perpendiculaire-àu-plan et son procédé de fabrication

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JP2014049145A (ja) * 2012-08-29 2014-03-17 Hitachi Ltd 磁気ヘッド及び磁気記憶装置
JP2015122476A (ja) * 2013-11-19 2015-07-02 日立金属株式会社 熱電変換材料及びそれを用いた熱電変換モジュール
JP2017004585A (ja) * 2015-06-15 2017-01-05 国立大学法人東北大学 膜面垂直通電型巨大磁気抵抗素子及び磁気デバイス
JP2019012810A (ja) * 2017-06-29 2019-01-24 Tdk株式会社 磁気抵抗効果素子、磁気ヘッド、センサ、高周波フィルタ及び発振素子
US20190392972A1 (en) * 2017-06-29 2019-12-26 Tdk Corporation Magnetoresistive effect element, magnetic head, sensor, high frequency filter, and oscillation element
US10665374B2 (en) * 2017-06-29 2020-05-26 Tdk Corporation Magnetoresistive effect element, magnetic head, sensor, high frequency filter, and oscillation element
JP2019165244A (ja) * 2018-02-22 2019-09-26 Tdk株式会社 磁化回転素子、磁気抵抗効果素子及び磁気メモリ
CN110392932A (zh) * 2018-02-22 2019-10-29 Tdk株式会社 自旋轨道转矩型磁化旋转元件、自旋轨道转矩型磁阻效应元件及磁存储器
US11127894B2 (en) 2018-02-22 2021-09-21 Tdk Corporation Spin-orbit-torque magnetization rotating element, spin-orbit-torque magnetoresistance effect element, and magnetic memory
CN110392932B (zh) * 2018-02-22 2023-09-26 Tdk株式会社 自旋轨道转矩型磁化旋转元件、自旋轨道转矩型磁阻效应元件及磁存储器
WO2022209531A1 (fr) * 2021-03-31 2022-10-06 国立研究開発法人物質・材料研究機構 Élément magnétorésistif géant courant-perpendiculaire-àu-plan et son procédé de fabrication

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