WO2011118786A1 - Procédé de fabrication d'un substrat de silicium à verre encapsulé - Google Patents

Procédé de fabrication d'un substrat de silicium à verre encapsulé Download PDF

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Publication number
WO2011118786A1
WO2011118786A1 PCT/JP2011/057400 JP2011057400W WO2011118786A1 WO 2011118786 A1 WO2011118786 A1 WO 2011118786A1 JP 2011057400 W JP2011057400 W JP 2011057400W WO 2011118786 A1 WO2011118786 A1 WO 2011118786A1
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Prior art keywords
glass
silicon substrate
recess
glass substrate
embedded
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PCT/JP2011/057400
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English (en)
Japanese (ja)
Inventor
亮 友井田
友洋 中谷
巧 田浦
真 奥村
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パナソニック電工株式会社
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Priority to JP2012507096A priority Critical patent/JPWO2011118786A1/ja
Publication of WO2011118786A1 publication Critical patent/WO2011118786A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/007—Interconnections between the MEMS and external electrical signals
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B81B2201/0235—Accelerometers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00—Microstructural systems or auxiliary parts thereof
    • B81B2207/01—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS
    • B81B2207/012—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS the micromechanical device and the control or processing electronics being separate parts in the same package
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00—Microstructural systems or auxiliary parts thereof
    • B81B2207/09—Packages
    • B81B2207/091—Arrangements for connecting external electrical signals to mechanical structures inside the package
    • B81B2207/094—Feed-through, via
    • B81B2207/095—Feed-through, via through the lid
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
    • G01P2015/0825—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass
    • G01P2015/0831—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass the mass being of the paddle type having the pivot axis between the longitudinal ends of the mass, e.g. see-saw configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements

Definitions

  • the present invention relates to a method for manufacturing a glass-embedded silicon substrate in which glass is disposed inside a silicon substrate body.
  • Patent Document 1 Conventionally, for example, a technique described in Patent Document 1 is known for the purpose of manufacturing a glass substrate having a fine structure.
  • the inner space of the depression becomes a closed space. Therefore, when a part of the glass substrate is embedded in the recess, the gas inside the recess is difficult to escape, so that the glass embedding process takes time, which is an adverse effect of shortening the process time. In addition, voids are easily generated in the re-solidified glass material, and the production yield is reduced.
  • the feature of the present invention that achieves the above object relates to a method for manufacturing a glass-embedded silicon substrate.
  • This manufacturing method includes at least first to fifth steps.
  • a recess is formed in the main surface of the silicon substrate body.
  • a glass substrate having a thick portion at a position facing the recess is prepared, the first main surface of the glass substrate is superimposed on the main surface of the silicon substrate body, and the recess is sealed.
  • the glass substrate is softened by applying heat, and a part of the glass substrate is embedded in the recess of the silicon substrate body.
  • the atmospheric pressure when the second step is performed is set lower than the atmospheric pressure when the third step is performed.
  • the glass substrate is cooled.
  • the fifth step the portion of the glass substrate embedded in the recess of the silicon substrate body is left and the other portion is removed.
  • FIG. 1A is a perspective view showing a configuration of a package lid in the semiconductor device according to the first embodiment of the present invention
  • FIG. 1B is a diagram illustrating the first embodiment of the present invention. It is a perspective view which shows the structure except a package lid
  • FIG. 3 is a cross-sectional view illustrating a schematic configuration of an acceleration sensor chip A in FIG. 2. 4 (a) to 4 (e) show a process for producing a glass-embedded silicon substrate as an example of the glass substrate 20 used for forming the first fixed substrate 2 shown in FIGS. It is sectional drawing.
  • FIG. 1A is a perspective view showing a configuration of a package lid in the semiconductor device according to the first embodiment of the present invention
  • FIG. 1B is a diagram illustrating the first embodiment of the present invention. It is a perspective view which shows the structure except a package lid
  • FIG. 5A is a cross-sectional view showing the configuration of a specific processing apparatus for performing the second step shown in FIG. 4C
  • FIG. 5B is a cross-sectional view of FIG. It is sectional drawing which shows the structure of the specific processing apparatus for enforcing the 3rd process shown to. It is a flowchart which shows the detailed procedure of the 2nd process and 3rd process performed using the manufacturing apparatus shown to Fig.5 (a) and FIG.5 (b).
  • 7A to 7E are process cross-sectional views illustrating a method for manufacturing a glass-embedded silicon substrate according to the second embodiment.
  • FIGS. 8A to 8E are process cross-sectional views illustrating a method for manufacturing a glass-embedded silicon substrate according to the third embodiment.
  • FIG. 9A to FIG. 9E are process cross-sectional views illustrating a method for manufacturing a glass-embedded silicon substrate according to the fourth embodiment.
  • the semiconductor device includes an acceleration sensor chip A as an example of a MEMS device, a control IC chip B on which a signal processing circuit that processes a signal output from the acceleration sensor chip A is formed, and an acceleration sensor chip A and a control IC chip B. Are mounted on the surface mounting type package 101.
  • the package 101 includes a plastic package main body 102 having a box-like shape with one open surface located on the upper surface in FIG. 1B and a package lid (lid) 103 that closes one open surface of the package 101.
  • the plastic package body 102 includes a plurality of leads 112 that are electrically connected to the acceleration sensor chip A and the control IC chip B.
  • Each lead 112 includes an outer lead 112 b led out from the outer side surface of the plastic package main body 102 and an inner lead 112 a led out from the inner side surface of the plastic package main body 102.
  • Each inner lead 112a is electrically connected to each pad included in the control IC chip B through a bonding wire W.
  • the acceleration sensor chip A has a mounting surface 102a located at the bottom of the plastic package main body 102 by the adhesive portions 104 arranged at three locations corresponding to the three vertices of the virtual triangle defined based on the outer peripheral shape of the acceleration sensor chip A. It is fixed to.
  • the adhesive portion 104 includes a frustoconical protrusion that is continuously and integrally provided on the plastic package body 102, and an adhesive that covers the protrusion.
  • the adhesive is made of, for example, a silicone resin such as a silicone resin having an elastic modulus of 1 MPa or less.
  • all the pads included in the acceleration sensor chip A are arranged along one side of the main surface of the acceleration sensor chip A facing the open surface of the plastic package main body 102.
  • the adhesive portion 104 is located at each vertex of a virtual triangle having vertices at two locations at both ends of the one side and one location (for example, the central portion) parallel to the one side.
  • the bonding wire W can be stably bonded to each pad.
  • one portion of the side parallel to the one side is not limited to the central portion, and may be, for example, one of both ends, but the central portion makes the semiconductor element A more stable. It can be supported and the bonding wire W can be stably bonded to each pad.
  • the control IC chip B is a semiconductor chip composed of a plurality of semiconductor elements formed on a semiconductor substrate made of single crystal silicon or the like, wirings connecting them, and a passivation film that protects the semiconductor elements and wirings from the external environment.
  • the entire back surface of the control IC chip B is fixed to the bottom surface of the plastic package body 102 with a silicone resin.
  • the signal processing circuit formed on the control IC chip B may be appropriately designed according to the function of the acceleration sensor chip A, and may be any one that cooperates with the acceleration sensor chip A.
  • the control IC chip B can be formed as an ASIC (Application Specific IC).
  • a die bonding process for fixing the acceleration sensor chip A and the control IC chip B to the plastic package body 102 is performed.
  • a wire bonding step of electrically connecting the acceleration sensor chip A and the control IC chip B and the control IC chip B and the inner lead 112a via the bonding wires W is performed.
  • a resin coating portion forming step for forming the resin coating portion 116 is performed, and subsequently, a sealing step for bonding the outer periphery of the package lid 103 to the plastic package body 102 is performed.
  • the inside of the plastic package main body 102 is sealed in an airtight state.
  • a notation 113 indicating a product name, a manufacturing date and the like is formed in an appropriate part of the package lid 103 by a laser marking technique.
  • the control IC chip B is formed using a single silicon substrate, whereas the acceleration sensor chip A is formed using a plurality of stacked substrates. Therefore, since the thickness of the acceleration sensor chip A is thicker than the thickness of the control IC chip B, the mounting surface 102a on which the acceleration sensor chip A is mounted at the bottom of the plastic package body 102 is formed from the mounting portion of the control IC chip B. Is also recessed. Therefore, on the bottom surface of the plastic package main body 102, the thickness of the portion where the acceleration sensor chip A is mounted is thinner than other portions.
  • the outer shape of the plastic package body 102 is a rectangular parallelepiped, but this is only an example, and the outer shape of the acceleration sensor chip A and the control IC chip B, the number of leads 112, the pitch, etc. What is necessary is just to set suitably according to.
  • LCP liquid crystalline polyester
  • PPS polyphenylene sulfite
  • PBT polybisamide triazole
  • each lead 112 that is, the material of the lead frame that is the basis of each lead 112
  • phosphor bronze having a high spring property among copper alloys is adopted.
  • a lead frame made of phosphor bronze and a thickness of 0.2 mm is used as the lead frame, and a laminated film of a Ni film having a thickness of 2 ⁇ m to 4 ⁇ m and an Au film having a thickness of 0.2 ⁇ m to 0.3 ⁇ m.
  • a plating film made of is formed by an electrolytic plating method. Thereby, it is possible to achieve both the bonding reliability of wire bonding and the soldering reliability.
  • the plus package body 102 of the thermoplastic resin molded product has leads 112 formed integrally at the same time.
  • the adhesion between the plastic package body 102 formed by LCP, which is a thermoplastic resin, and the Au film of the lead 112 is low. Therefore, the lead 112 is prevented from falling off by providing a punch hole in a portion of the above-described lead frame embedded in the plastic package body 102.
  • the semiconductor device of FIG. 1 is provided with a resin coating portion 116 that covers the exposed portion of the inner lead 112a and the periphery thereof.
  • the resin coating portion 116 is made of a moisture-impermeable resin such as an epoxy resin such as an amine epoxy resin. After the wire bonding process, this non-moisture permeable resin is applied using a dispenser and cured to improve airtightness. Note that ceramics may be used instead of the moisture-impermeable resin, and when ceramics are used, they may be sprayed locally using a technique such as plasma spraying.
  • the bonding wire W an Au wire having higher corrosion resistance than that of an Al wire is used.
  • an Au wire having a diameter of 25 ⁇ m is adopted, the present invention is not limited to this, and for example, an Au wire having a diameter of 20 ⁇ m to 50 ⁇ m may be appropriately selected.
  • the acceleration sensor chip A is a capacitance type acceleration sensor chip, which is an SOI (Silicon On Insulator).
  • a sensor main body 1 formed using a substrate 10 a first fixed substrate 2 formed using a glass substrate 20, and a second fixed substrate 3 formed using a glass substrate 30 are provided.
  • the first fixed substrate 2 is fixed to one surface side (upper surface side in FIG. 2) of the sensor body 1, and the second fixed substrate 3 is fixed to the other surface side (lower surface side in FIG. 2) of the sensor body 1. Is done.
  • the first and second fixed substrates 2 and 3 are formed to have the same outer dimensions as the sensor body 1.
  • the sensor body 1 is not limited to the SOI substrate 10 and may be formed using, for example, a normal silicon substrate that does not include an insulating layer. Further, the first and second fixed substrates 2 and 3 may be formed of either a silicon substrate or a glass substrate, respectively.
  • the sensor main body 1 includes a frame portion 11 in which two rectangular windows 12 in a plan view are arranged side by side along the one surface, and two rectangular shapes in a plan view arranged inside each open window 12 of the frame portion 11.
  • the weight part 13 and a pair of support spring parts 14 for connecting the frame part 11 and the weight part 13 to each other are provided.
  • the two weight parts 13 having a rectangular shape in a plan view are arranged separately from the first and second fixed substrates 2 and 3, respectively.
  • Movable electrodes 15A and 15B are arranged on the main surface of each weight portion 13 facing the first fixed substrate 2, respectively.
  • the entire outer periphery of the frame portion 11 surrounding the weight portion 13 is joined to the first and second fixed substrates 2 and 3.
  • the frame portion 11 and the first and second fixed substrates 2 and 3 constitute a chip size package that houses the weight portion 13 and a stator 16 described later.
  • the pair of support spring portions 14 are arranged so as to sandwich the weight portion 13 along a straight line passing through the center of gravity of the weight portion 13 inside each opening window 12 of the frame portion 11.
  • Each support spring portion 14 is a torsion spring (torsion bar) capable of torsional deformation, and is formed to be thinner than the frame portion 11 and the weight portion 13. It can be displaced around the pair of support spring portions 14.
  • a rectangular window hole 17 in plan view that communicates with each opening window 12 is arranged in the same direction as the two opening windows 12. Inside each window hole 17, two stators 16 are arranged along the direction in which the pair of support spring portions 14 are arranged side by side.
  • each stator 16 is joined to the first and second fixed substrates 2 and 3, respectively.
  • each stator 16 is formed with a circular electrode pad 18 made of a metal thin film such as an Al—Si film.
  • a circular electrode pad 18 made of, for example, a metal thin film such as an Al—Si film is formed in a portion between adjacent window holes 17 in the frame portion 11.
  • Each electrode pad 18 formed on each stator 16 is electrically connected to each fixed electrode 25 described later, and the electrode pad 18 formed on the frame portion 11 is electrically connected to the movable electrode 15A and the movable electrode 15B. It is connected to the.
  • the plurality of electrode pads 18 described above are arranged along one side of the rectangular outer peripheral shape of the acceleration sensor chip A.
  • the first fixed substrate 2 includes a plurality of wirings 28 penetrating between a first main surface of the first fixed substrate 2 and a second main surface (a surface overlapping the sensor main body 1) facing the first main surface. And a plurality of fixed electrodes 25 formed on the second main surface.
  • the fixed electrode 25Aa and the fixed electrode 25Ab are arranged in a pair so as to face the movable electrode 15A.
  • the fixed electrode 25Ba and the fixed electrode 25Bb are arranged in a pair so as to face the movable electrode 15B.
  • Each fixed electrode 25 is made of a metal thin film such as an Al—Si film, for example.
  • Each wiring 28 is electrically connected to the electrode pad 18 of the sensor body 1 on the second main surface of the first fixed substrate 2. As a result, the potential of each fixed electrode 25 and the potential of the movable electrode 15 can be taken out from the acceleration sensor chip A via the electrode pad 18.
  • An adhesion preventing film 35 made of a metal thin film such as an Al—Si film is disposed on one surface of the second fixed substrate 3 (a surface overlapping the sensor body 1) and at a position corresponding to the weight portion 13. Yes.
  • the adhesion preventing film 35 prevents adhesion of the weight part 13 that is displaced.
  • FIG. 3 shows a configuration of the acceleration sensor chip A on a cut surface perpendicular to a straight line passing through the pair of support spring portions 14.
  • the sensor body 1 is formed using an SOI substrate 10.
  • the SOI substrate 10 includes a support substrate 10a made of single crystal silicon, an insulating layer 10b made of a silicon oxide film arranged on the support substrate 10a, and an n-type silicon layer (active) arranged on the insulating layer 10b. Layer) 10c.
  • the frame 11 and the stator 16 are joined to the first fixed substrate 2 and the second fixed substrate 3.
  • the weight portion 13 is disposed separately from the first and second fixed substrates 2 and 3, and is supported by the frame 11 by a pair of support spring portions 14.
  • a plurality of minute protrusions 13 c that restrict excessive displacement of the weight part 13 are provided so as to protrude from the surfaces of the weight part 13 facing the first and second fixed substrates 2 and 3.
  • the weight portion 13 is formed with concave portions 13a and 13b opened in a rectangular shape. Since the sizes of the recesses 13a and 13b are different from each other, the masses on the left and right of the weight portion 13 are different from each other with a straight line passing through the pair of support spring portions 14 as a boundary.
  • the wiring 28 of the first fixed substrate 2 is electrically connected to the electrode pad 18.
  • the electrode pad 18 is connected to the fixed electrode 25 through the stator 16, the connecting conductor portion 16 d, and the metal wiring 26.
  • the acceleration sensor chip A described above has four pairs of the movable electrode 15 provided on the sensor body 1 and the fixed electrode 25 provided on the first fixed substrate 2.
  • a variable capacitor is configured for each pair.
  • acceleration is applied to the acceleration sensor chip A, that is, the weight portion 13, the support spring portion 14 is twisted and the weight portion 13 is displaced.
  • the facing area and interval between the paired fixed electrode 25 and movable electrode 15 change, and the capacitance of the variable capacitor changes. Therefore, the acceleration sensor chip A can detect acceleration from the change in capacitance.
  • FIGS. 4A to 4E a glass-embedded silicon substrate as an example of the glass substrate 20 used for forming the first fixed substrate 2 shown in FIGS. The manufacturing method will be described.
  • a silicon substrate body 51 having a front surface (upper surface in FIG. 4) and a rear surface (lower surface in FIG. 4) is prepared.
  • a p-type or n-type impurity is added to the entire silicon substrate body 51, and the electrical resistance of the silicon substrate body 51 is sufficiently small.
  • an impurity is added to the entire silicon substrate body 51.
  • the impurity may not be added to the entire silicon substrate body 51. It is sufficient that impurities are added at least to the depth of the portion to be left as the wiring in FIG.
  • a predetermined region on the surface of the silicon substrate body 51 is formed by dry etching such as wet etching or reactive ion etching (RIE) using a TMAH (tetramethylammonium hydroxide) aqueous solution as an etchant.
  • TMAH tetramethylammonium hydroxide
  • the glass substrate 54 is cooled and re-solidified (fourth step). Then, as shown in FIG.4 (e), the part embedded in the recessed part 52 of the silicon substrate main body 51 is left among glass substrates 54, and another part is removed (5th process). Further, the silicon substrate body 51 is left with a portion between the surface and the plane including the bottom surface of the recess 52, and the other portions are removed.
  • the second main surface of the glass substrate 54 (such as grinding using a diamond grindstone, polishing such as chemical mechanical polishing (CMP), or dry etching such as RIE or wet etching using HF is used.
  • the upper surface in FIG. 4 is uniformly scraped to expose the silicon substrate body 51 on the second main surface of the glass substrate 54.
  • the back surface of the silicon substrate body 51 is evenly scraped to expose the glass substrate 54 embedded in the recess 52 on the back surface of the silicon substrate body 51. Either glass or silicon may be removed first.
  • the glass-embedded silicon substrate manufactured by the above steps is obtained by embedding a part of the glass substrate 54 in the silicon substrate body 51 as shown in FIG. 4E is applied to the wiring 28 shown in FIGS. 2 and 3, and the glass substrate 54 shown in FIG. 4E is replaced with the glass substrate shown in FIGS. Apply to 20.
  • the glass-embedded silicon substrate shown in FIG. 4E can be applied to the glass substrate 20 used for forming the first fixed substrate 2 shown in FIGS.
  • this manufacturing apparatus includes a vacuum chamber 305 having a size capable of accommodating the silicon substrate body 51 and the glass substrate 54, and a vacuum pump such as a rotary pump that exhausts the gas in the vacuum chamber 305. 306 at least.
  • this manufacturing apparatus additionally seals the recess 52 by superimposing the first main surface of the glass substrate on the surface of the silicon substrate body 51 in a reduced-pressure atmosphere in the vacuum chamber 305. Means.
  • the manufacturing apparatus includes means for bonding the silicon substrate body 51 and the glass substrate 54 by a method such as anodic bonding, surface activation bonding, and resin bonding in a reduced pressure atmosphere.
  • a method such as anodic bonding, surface activation bonding, and resin bonding in a reduced pressure atmosphere.
  • the recessed part 52 can be sealed in a pressure-reduced atmosphere.
  • this manufacturing apparatus includes a flat plate stage 308 and a heating / pressurizing jig 307.
  • the heating / pressurizing jig 307 includes heating means such as a heater 309 for applying heat to the glass substrate 54, and can apply heat and force to the glass substrate 54 at the same time.
  • the silicon substrate body 51 and the glass substrate 54 are disposed so as to overlap each other between the stage 308 and the heating / pressurizing jig 307.
  • the apparatus of FIG. 5 (b) operates in an air atmosphere.
  • the silicon substrate main body 51 and the glass substrate 54 are carried into the vacuum chamber 305 of the manufacturing apparatus of FIG. 5A, and the vacuum chamber 305 is sealed. Then, the vacuum pump 306 is driven to evacuate the vacuum chamber 305. At this point, at least the recess 52 is not sealed. That is, the first main surface of the glass substrate may be superimposed on the surface of the silicon substrate body 51, but it is not joined. Thereby, when exhausting the inside of the vacuum chamber 305, the gas inside the recess 52 can also be exhausted.
  • the recess 52 is sealed.
  • the silicon substrate body 51 and the glass substrate 54 are stacked in a vacuum atmosphere (S01).
  • Each of the overlapping surfaces of the silicon substrate body 51 and the glass substrate 54 is preferably processed to have a flat surface (reducing the surface roughness), whereby the overlapping surface of the silicon substrate body 51 and the glass substrate 54 is The airtightness of the concave portion 52 can be sealed.
  • the vacuum pump 306 is stopped, the inside of the vacuum chamber 305 is returned to atmospheric pressure, and the bonded silicon substrate body 51 and glass substrate 54 are taken out from the vacuum chamber 305. Since the recess 52 is hermetically sealed, the inside of the recess 52 is kept in a vacuum state.
  • step S03 The silicon substrate body 51 and the glass substrate 54 are disposed between the stage 308 and the heating / pressurizing jig 307 of the manufacturing apparatus in FIG.
  • the heater 309 is turned on to heat the glass substrate 54.
  • the switch of the heater 309 is controlled while monitoring the temperature of the glass substrate 54 to maintain the softening temperature. For example, in the case of Tempax glass, it may be heated to around 820 ° C.
  • step S05 the glass substrate 54 and the silicon substrate body 51 are pressed using a heating / pressurizing jig 307. At this time, since the pressure inside the recess 52 is lower than the outside pressure, the glass is sucked into the recess 52 by this pressure difference. Further, a part of the glass substrate 54 softened by the heat treatment in step S03 and the press treatment in step S05 is embedded in the recess 52 of the silicon substrate body 51 (third step).
  • step S07 when the concave portion 52 is filled with the softened glass substrate 54, the press is stopped, the process proceeds to step S09, the heater 309 is turned off, and a predetermined cooling means is used. Cool 54.
  • the second step and the third step are performed using the manufacturing apparatus shown in FIGS. 5 (a) and 5 (b).
  • the second step in FIG. 4 corresponds to step S01 in FIG. 6, and the third step in FIG. 4 corresponds to steps S03 to S07 in FIG.
  • the atmospheric pressure when performing the second step of sealing the concave portion 52 is set lower than the atmospheric pressure when performing the third step of embedding glass in the concave portion 52.
  • the pressure inside the recess 52 becomes lower than the outside pressure, so that the glass is sucked into the recess 52 due to this pressure difference. Therefore, the glass can be embedded quickly and voids can be suppressed.
  • the second process is performed in a vacuum
  • the third process is performed at atmospheric pressure.
  • Conduct in. When the glass is embedded in the recess 52, the external atmospheric pressure is atmospheric pressure, but the internal pressure of the recess 52 is kept in vacuum, so that the glass is sucked into the recess 52 by this pressure difference. Therefore, the glass can be embedded quickly and voids can be suppressed.
  • the first main surface and the second main surface opposite to the first main surface are described as examples using a flat glass substrate.
  • the present invention is not limited to this.
  • a glass substrate having a thick portion at a position facing the concave portion of the silicon substrate may be prepared, and the thick portion may be opposed to the concave portion to seal the concave portion. If it does in this way, glass can be embedded more effectively in a crevice.
  • this thick portion can be constituted by a convex portion formed on the first main surface or the second main surface, or both main surfaces of the first main surface and the second main surface. You may comprise by forming a convex part in a surface.
  • the first convex portion 210 that enters the concave portion 202 is formed on the first main surface of the glass substrate 204, that is, the surface overlapping the silicon substrate body 201. It may be formed. Accordingly, when a part of the glass substrate 204 is embedded in the recess 202, glass already exists in the recess 202, so that voids are less likely to occur in the recess 202, and the glass can be embedded faster.
  • FIGS. 7A and 7B are the same as the steps shown in FIGS. 4A and 4B, and description thereof is omitted.
  • the first main surface (the lower surface in FIG. 7) of the glass substrate 204 is overlaid on the surface of the silicon substrate body 201 to form the recess 202.
  • Seal (second step).
  • the 1st convex part 210 is formed in the 1st main surface of the glass substrate 204, ie, the surface which overlaps with the silicon substrate main body 201, by blast processing, laser processing, etc. previously.
  • the first convex portion 210 enters the concave portion 202.
  • the first convex portion 210 that enters the concave portion 202 when the second step is performed is formed on the first main surface of the glass substrate 204. Accordingly, when a part of the glass substrate 204 is embedded in the recess 202, glass already exists in the recess 202, so that voids are less likely to occur in the recess 202, and the glass can be embedded faster.
  • the second convex portion 310 is formed on the second main surface of the glass substrate 304, that is, the surface facing the surface overlapping the silicon substrate body 301. It may be formed.
  • FIGS. 8A and 8B are the same as the steps shown in FIGS. 4A and 4B, and a description thereof will be omitted.
  • the first main surface (the lower surface in FIG. 8) of the glass substrate 304 is overlaid on the surface of the silicon substrate body 301 to form the recess 302.
  • Seal (second step) A second convex portion 310 is formed in advance on the second main surface of the glass substrate 304, that is, the surface facing the surface overlapping the silicon substrate body 301 by blasting or laser processing.
  • the second convex portion 310 is formed at the same position as the concave portion 302 when viewed from the normal direction of the first main surface of the glass substrate 304.
  • the second protrusion 310 is located at the same position as the recess 302 when viewed from the normal direction of the first main surface of the glass substrate 304.
  • the force by which the heating / pressurizing jig 307 pushes the glass substrate 304 is concentrated on the second convex portion 310, so that voids are less likely to be generated in the concave portion 302, and the glass can be embedded more quickly.
  • a forward tapered shape may be provided in at least a part of the recess 402 of the silicon substrate body 401. Thereby, glass can be embedded more efficiently.
  • FIG. 9A The process shown in FIG. 9A is the same as the process shown in FIG. As shown in FIG. 9B, for example, a predetermined region on the surface of the silicon substrate body 401 is selectively removed by wet etching having crystal anisotropy to form a recess 402 on the surface of the silicon substrate body 401.
  • the concave portion 402 of the silicon substrate body 401 has a forward tapered shape. That is, the cross-sectional area of the recess 402 parallel to the main surface of the silicon substrate body 401 increases from the bottom surface of the recess 402 toward the main surface of the silicon substrate body 401.
  • the concave portion 402 can be provided with a forward tapered shape, glass can be embedded more efficiently. Therefore, voids are less likely to occur in the recess 402, and the glass can be embedded more quickly.
  • the forward tapered shape provided in the recess 402 may be formed in at least a part of the recess 402. If it is formed at least partially, the effects of void suppression and high processing speed can be obtained.
  • the recess 52 is sealed in a reduced pressure atmosphere (second step), and the glass is embedded in the recess 52 in an atmospheric pressure atmosphere ( (3rd process).
  • the present invention is not limited to this.
  • the recess 52 may be sealed in an atmospheric pressure atmosphere, and glass may be embedded in the recess 52 in a pressurized atmosphere. Also by this, when the glass is embedded in the recess 52, the pressure inside the recess 52 can be made smaller than the pressure outside.
  • the step of forming the recess on the main surface of the silicon substrate body a part of the silicon substrate body made of single crystal silicon is processed to form the recess made of single crystal silicon.
  • the step of forming a recess in the main surface of the silicon substrate body is performed by depositing a silicon film made of polycrystalline silicon on the main surface of the silicon substrate body made of single crystal silicon, and removing a portion of the silicon film to form the recess May be formed.
  • At least a part of the recess 202 of the silicon substrate 201 of the second embodiment and at least a part of the recess 302 of the silicon substrate 301 of the third embodiment are forward-oriented. It is good also as a taper shape of this, Thereby, glass can be embedded more efficiently.

Abstract

La présente invention concerne un procédé de fabrication d'un substrat de silicium à verre encapsulé qui permet l'encapsulation rapide du verre et élimine les vides. On forme des profils concaves (52) sur la surface principale du corps principal d'un substrat de silicium (51). On superpose une première surface principale d'un substrat de verre (54) sur la surface principale du corps principal du substrat de silicium (51), en enfermant les profils concaves (52) de ce dernier. On fait mollir le substrat de verre (54) en lui appliquant de la chaleur, et on encapsule une partie du substrat de verre (54) dans les profils concaves (52) du corps principal du substrat de silicium (51). On fait refroidir le substrat de verre (54). On laisse en place la partie du substrat de verre (54) encapsulée dans les profils concaves (52) du corps principal du substrat de silicium (51), et on enlève l'autre partie. On règle la pression de l'air sur une valeur plus basse lorsqu'on procède à l'étape qui consiste à enfermer les profils concaves (52) que lorsqu'on procède à l'étape qui consiste à encapsuler la partie du substrat de verre (54) dans les profils concaves (52) du corps principal du substrat de silicium (51).
PCT/JP2011/057400 2010-03-26 2011-03-25 Procédé de fabrication d'un substrat de silicium à verre encapsulé WO2011118786A1 (fr)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012102252A1 (fr) * 2011-01-27 2012-08-02 パナソニック株式会社 Substrat équipé d'une électrode traversante et son procédé de fabrication
US9429589B2 (en) 2012-03-02 2016-08-30 Seiko Epson Corporation Physical quantity sensor and electronic apparatus

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104649221A (zh) * 2015-01-19 2015-05-27 北京大学 一种复杂硅玻璃混合结构圆片的加工方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004523124A (ja) * 2001-03-14 2004-07-29 フラウンホファー ゲセルシャフトツール フェールデルンク ダー アンゲヴァンテン フォルシュンク エー．ファオ． ガラス系材料からなるフラット基板を構造化する方法
JP2007064920A (ja) * 2005-09-02 2007-03-15 Alps Electric Co Ltd 静電容量型力学量センサ
JP2008518790A (ja) * 2004-11-04 2008-06-05 マイクロチップス・インコーポレーテッド 冷間圧接封止法および装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2727204T3 (es) * 2006-12-21 2019-10-14 Continental Teves Ag & Co Ohg Módulo de encapsulación, método para su fabricación y su utilización
DE102007002725A1 (de) * 2007-01-18 2008-07-31 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Gehäuse für in mobilen Anwendungen eingesetzte mikromechanische und mikrooptische Bauelemente

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004523124A (ja) * 2001-03-14 2004-07-29 フラウンホファー ゲセルシャフトツール フェールデルンク ダー アンゲヴァンテン フォルシュンク エー．ファオ． ガラス系材料からなるフラット基板を構造化する方法
JP2008518790A (ja) * 2004-11-04 2008-06-05 マイクロチップス・インコーポレーテッド 冷間圧接封止法および装置
JP2007064920A (ja) * 2005-09-02 2007-03-15 Alps Electric Co Ltd 静電容量型力学量センサ

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012102252A1 (fr) * 2011-01-27 2012-08-02 パナソニック株式会社 Substrat équipé d'une électrode traversante et son procédé de fabrication
US9429589B2 (en) 2012-03-02 2016-08-30 Seiko Epson Corporation Physical quantity sensor and electronic apparatus

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