WO2011118786A1 - Manufacturing method for glass-embedded silicon substrate - Google Patents

Manufacturing method for glass-embedded silicon substrate Download PDF

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Publication number
WO2011118786A1
WO2011118786A1 PCT/JP2011/057400 JP2011057400W WO2011118786A1 WO 2011118786 A1 WO2011118786 A1 WO 2011118786A1 JP 2011057400 W JP2011057400 W JP 2011057400W WO 2011118786 A1 WO2011118786 A1 WO 2011118786A1
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WO
WIPO (PCT)
Prior art keywords
glass
silicon substrate
recess
glass substrate
embedded
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Application number
PCT/JP2011/057400
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French (fr)
Japanese (ja)
Inventor
亮 友井田
友洋 中谷
巧 田浦
真 奥村
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パナソニック電工株式会社
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Priority to JP2012507096A priority Critical patent/JPWO2011118786A1/en
Publication of WO2011118786A1 publication Critical patent/WO2011118786A1/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/007—Interconnections between the MEMS and external electrical signals
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B81B2201/0235—Accelerometers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00—Microstructural systems or auxiliary parts thereof
    • B81B2207/01—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS
    • B81B2207/012—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS the micromechanical device and the control or processing electronics being separate parts in the same package
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00—Microstructural systems or auxiliary parts thereof
    • B81B2207/09—Packages
    • B81B2207/091—Arrangements for connecting external electrical signals to mechanical structures inside the package
    • B81B2207/094—Feed-through, via
    • B81B2207/095—Feed-through, via through the lid
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
    • G01P2015/0825—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass
    • G01P2015/0831—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass the mass being of the paddle type having the pivot axis between the longitudinal ends of the mass, e.g. see-saw configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements

Definitions

  • the present invention relates to a method for manufacturing a glass-embedded silicon substrate in which glass is disposed inside a silicon substrate body.
  • Patent Document 1 Conventionally, for example, a technique described in Patent Document 1 is known for the purpose of manufacturing a glass substrate having a fine structure.
  • the inner space of the depression becomes a closed space. Therefore, when a part of the glass substrate is embedded in the recess, the gas inside the recess is difficult to escape, so that the glass embedding process takes time, which is an adverse effect of shortening the process time. In addition, voids are easily generated in the re-solidified glass material, and the production yield is reduced.
  • the feature of the present invention that achieves the above object relates to a method for manufacturing a glass-embedded silicon substrate.
  • This manufacturing method includes at least first to fifth steps.
  • a recess is formed in the main surface of the silicon substrate body.
  • a glass substrate having a thick portion at a position facing the recess is prepared, the first main surface of the glass substrate is superimposed on the main surface of the silicon substrate body, and the recess is sealed.
  • the glass substrate is softened by applying heat, and a part of the glass substrate is embedded in the recess of the silicon substrate body.
  • the atmospheric pressure when the second step is performed is set lower than the atmospheric pressure when the third step is performed.
  • the glass substrate is cooled.
  • the fifth step the portion of the glass substrate embedded in the recess of the silicon substrate body is left and the other portion is removed.
  • FIG. 1A is a perspective view showing a configuration of a package lid in the semiconductor device according to the first embodiment of the present invention
  • FIG. 1B is a diagram illustrating the first embodiment of the present invention. It is a perspective view which shows the structure except a package lid
  • FIG. 3 is a cross-sectional view illustrating a schematic configuration of an acceleration sensor chip A in FIG. 2. 4 (a) to 4 (e) show a process for producing a glass-embedded silicon substrate as an example of the glass substrate 20 used for forming the first fixed substrate 2 shown in FIGS. It is sectional drawing.
  • FIG. 1A is a perspective view showing a configuration of a package lid in the semiconductor device according to the first embodiment of the present invention
  • FIG. 1B is a diagram illustrating the first embodiment of the present invention. It is a perspective view which shows the structure except a package lid
  • FIG. 5A is a cross-sectional view showing the configuration of a specific processing apparatus for performing the second step shown in FIG. 4C
  • FIG. 5B is a cross-sectional view of FIG. It is sectional drawing which shows the structure of the specific processing apparatus for enforcing the 3rd process shown to. It is a flowchart which shows the detailed procedure of the 2nd process and 3rd process performed using the manufacturing apparatus shown to Fig.5 (a) and FIG.5 (b).
  • 7A to 7E are process cross-sectional views illustrating a method for manufacturing a glass-embedded silicon substrate according to the second embodiment.
  • FIGS. 8A to 8E are process cross-sectional views illustrating a method for manufacturing a glass-embedded silicon substrate according to the third embodiment.
  • FIG. 9A to FIG. 9E are process cross-sectional views illustrating a method for manufacturing a glass-embedded silicon substrate according to the fourth embodiment.
  • the semiconductor device includes an acceleration sensor chip A as an example of a MEMS device, a control IC chip B on which a signal processing circuit that processes a signal output from the acceleration sensor chip A is formed, and an acceleration sensor chip A and a control IC chip B. Are mounted on the surface mounting type package 101.
  • the package 101 includes a plastic package main body 102 having a box-like shape with one open surface located on the upper surface in FIG. 1B and a package lid (lid) 103 that closes one open surface of the package 101.
  • the plastic package body 102 includes a plurality of leads 112 that are electrically connected to the acceleration sensor chip A and the control IC chip B.
  • Each lead 112 includes an outer lead 112 b led out from the outer side surface of the plastic package main body 102 and an inner lead 112 a led out from the inner side surface of the plastic package main body 102.
  • Each inner lead 112a is electrically connected to each pad included in the control IC chip B through a bonding wire W.
  • the acceleration sensor chip A has a mounting surface 102a located at the bottom of the plastic package main body 102 by the adhesive portions 104 arranged at three locations corresponding to the three vertices of the virtual triangle defined based on the outer peripheral shape of the acceleration sensor chip A. It is fixed to.
  • the adhesive portion 104 includes a frustoconical protrusion that is continuously and integrally provided on the plastic package body 102, and an adhesive that covers the protrusion.
  • the adhesive is made of, for example, a silicone resin such as a silicone resin having an elastic modulus of 1 MPa or less.
  • all the pads included in the acceleration sensor chip A are arranged along one side of the main surface of the acceleration sensor chip A facing the open surface of the plastic package main body 102.
  • the adhesive portion 104 is located at each vertex of a virtual triangle having vertices at two locations at both ends of the one side and one location (for example, the central portion) parallel to the one side.
  • the bonding wire W can be stably bonded to each pad.
  • one portion of the side parallel to the one side is not limited to the central portion, and may be, for example, one of both ends, but the central portion makes the semiconductor element A more stable. It can be supported and the bonding wire W can be stably bonded to each pad.
  • the control IC chip B is a semiconductor chip composed of a plurality of semiconductor elements formed on a semiconductor substrate made of single crystal silicon or the like, wirings connecting them, and a passivation film that protects the semiconductor elements and wirings from the external environment.
  • the entire back surface of the control IC chip B is fixed to the bottom surface of the plastic package body 102 with a silicone resin.
  • the signal processing circuit formed on the control IC chip B may be appropriately designed according to the function of the acceleration sensor chip A, and may be any one that cooperates with the acceleration sensor chip A.
  • the control IC chip B can be formed as an ASIC (Application Specific IC).
  • a die bonding process for fixing the acceleration sensor chip A and the control IC chip B to the plastic package body 102 is performed.
  • a wire bonding step of electrically connecting the acceleration sensor chip A and the control IC chip B and the control IC chip B and the inner lead 112a via the bonding wires W is performed.
  • a resin coating portion forming step for forming the resin coating portion 116 is performed, and subsequently, a sealing step for bonding the outer periphery of the package lid 103 to the plastic package body 102 is performed.
  • the inside of the plastic package main body 102 is sealed in an airtight state.
  • a notation 113 indicating a product name, a manufacturing date and the like is formed in an appropriate part of the package lid 103 by a laser marking technique.
  • the control IC chip B is formed using a single silicon substrate, whereas the acceleration sensor chip A is formed using a plurality of stacked substrates. Therefore, since the thickness of the acceleration sensor chip A is thicker than the thickness of the control IC chip B, the mounting surface 102a on which the acceleration sensor chip A is mounted at the bottom of the plastic package body 102 is formed from the mounting portion of the control IC chip B. Is also recessed. Therefore, on the bottom surface of the plastic package main body 102, the thickness of the portion where the acceleration sensor chip A is mounted is thinner than other portions.
  • the outer shape of the plastic package body 102 is a rectangular parallelepiped, but this is only an example, and the outer shape of the acceleration sensor chip A and the control IC chip B, the number of leads 112, the pitch, etc. What is necessary is just to set suitably according to.
  • LCP liquid crystalline polyester
  • PPS polyphenylene sulfite
  • PBT polybisamide triazole
  • each lead 112 that is, the material of the lead frame that is the basis of each lead 112
  • phosphor bronze having a high spring property among copper alloys is adopted.
  • a lead frame made of phosphor bronze and a thickness of 0.2 mm is used as the lead frame, and a laminated film of a Ni film having a thickness of 2 ⁇ m to 4 ⁇ m and an Au film having a thickness of 0.2 ⁇ m to 0.3 ⁇ m.
  • a plating film made of is formed by an electrolytic plating method. Thereby, it is possible to achieve both the bonding reliability of wire bonding and the soldering reliability.
  • the plus package body 102 of the thermoplastic resin molded product has leads 112 formed integrally at the same time.
  • the adhesion between the plastic package body 102 formed by LCP, which is a thermoplastic resin, and the Au film of the lead 112 is low. Therefore, the lead 112 is prevented from falling off by providing a punch hole in a portion of the above-described lead frame embedded in the plastic package body 102.
  • the semiconductor device of FIG. 1 is provided with a resin coating portion 116 that covers the exposed portion of the inner lead 112a and the periphery thereof.
  • the resin coating portion 116 is made of a moisture-impermeable resin such as an epoxy resin such as an amine epoxy resin. After the wire bonding process, this non-moisture permeable resin is applied using a dispenser and cured to improve airtightness. Note that ceramics may be used instead of the moisture-impermeable resin, and when ceramics are used, they may be sprayed locally using a technique such as plasma spraying.
  • the bonding wire W an Au wire having higher corrosion resistance than that of an Al wire is used.
  • an Au wire having a diameter of 25 ⁇ m is adopted, the present invention is not limited to this, and for example, an Au wire having a diameter of 20 ⁇ m to 50 ⁇ m may be appropriately selected.
  • the acceleration sensor chip A is a capacitance type acceleration sensor chip, which is an SOI (Silicon On Insulator).
  • a sensor main body 1 formed using a substrate 10 a first fixed substrate 2 formed using a glass substrate 20, and a second fixed substrate 3 formed using a glass substrate 30 are provided.
  • the first fixed substrate 2 is fixed to one surface side (upper surface side in FIG. 2) of the sensor body 1, and the second fixed substrate 3 is fixed to the other surface side (lower surface side in FIG. 2) of the sensor body 1. Is done.
  • the first and second fixed substrates 2 and 3 are formed to have the same outer dimensions as the sensor body 1.
  • the sensor body 1 is not limited to the SOI substrate 10 and may be formed using, for example, a normal silicon substrate that does not include an insulating layer. Further, the first and second fixed substrates 2 and 3 may be formed of either a silicon substrate or a glass substrate, respectively.
  • the sensor main body 1 includes a frame portion 11 in which two rectangular windows 12 in a plan view are arranged side by side along the one surface, and two rectangular shapes in a plan view arranged inside each open window 12 of the frame portion 11.
  • the weight part 13 and a pair of support spring parts 14 for connecting the frame part 11 and the weight part 13 to each other are provided.
  • the two weight parts 13 having a rectangular shape in a plan view are arranged separately from the first and second fixed substrates 2 and 3, respectively.
  • Movable electrodes 15A and 15B are arranged on the main surface of each weight portion 13 facing the first fixed substrate 2, respectively.
  • the entire outer periphery of the frame portion 11 surrounding the weight portion 13 is joined to the first and second fixed substrates 2 and 3.
  • the frame portion 11 and the first and second fixed substrates 2 and 3 constitute a chip size package that houses the weight portion 13 and a stator 16 described later.
  • the pair of support spring portions 14 are arranged so as to sandwich the weight portion 13 along a straight line passing through the center of gravity of the weight portion 13 inside each opening window 12 of the frame portion 11.
  • Each support spring portion 14 is a torsion spring (torsion bar) capable of torsional deformation, and is formed to be thinner than the frame portion 11 and the weight portion 13. It can be displaced around the pair of support spring portions 14.
  • a rectangular window hole 17 in plan view that communicates with each opening window 12 is arranged in the same direction as the two opening windows 12. Inside each window hole 17, two stators 16 are arranged along the direction in which the pair of support spring portions 14 are arranged side by side.
  • each stator 16 is joined to the first and second fixed substrates 2 and 3, respectively.
  • each stator 16 is formed with a circular electrode pad 18 made of a metal thin film such as an Al—Si film.
  • a circular electrode pad 18 made of, for example, a metal thin film such as an Al—Si film is formed in a portion between adjacent window holes 17 in the frame portion 11.
  • Each electrode pad 18 formed on each stator 16 is electrically connected to each fixed electrode 25 described later, and the electrode pad 18 formed on the frame portion 11 is electrically connected to the movable electrode 15A and the movable electrode 15B. It is connected to the.
  • the plurality of electrode pads 18 described above are arranged along one side of the rectangular outer peripheral shape of the acceleration sensor chip A.
  • the first fixed substrate 2 includes a plurality of wirings 28 penetrating between a first main surface of the first fixed substrate 2 and a second main surface (a surface overlapping the sensor main body 1) facing the first main surface. And a plurality of fixed electrodes 25 formed on the second main surface.
  • the fixed electrode 25Aa and the fixed electrode 25Ab are arranged in a pair so as to face the movable electrode 15A.
  • the fixed electrode 25Ba and the fixed electrode 25Bb are arranged in a pair so as to face the movable electrode 15B.
  • Each fixed electrode 25 is made of a metal thin film such as an Al—Si film, for example.
  • Each wiring 28 is electrically connected to the electrode pad 18 of the sensor body 1 on the second main surface of the first fixed substrate 2. As a result, the potential of each fixed electrode 25 and the potential of the movable electrode 15 can be taken out from the acceleration sensor chip A via the electrode pad 18.
  • An adhesion preventing film 35 made of a metal thin film such as an Al—Si film is disposed on one surface of the second fixed substrate 3 (a surface overlapping the sensor body 1) and at a position corresponding to the weight portion 13. Yes.
  • the adhesion preventing film 35 prevents adhesion of the weight part 13 that is displaced.
  • FIG. 3 shows a configuration of the acceleration sensor chip A on a cut surface perpendicular to a straight line passing through the pair of support spring portions 14.
  • the sensor body 1 is formed using an SOI substrate 10.
  • the SOI substrate 10 includes a support substrate 10a made of single crystal silicon, an insulating layer 10b made of a silicon oxide film arranged on the support substrate 10a, and an n-type silicon layer (active) arranged on the insulating layer 10b. Layer) 10c.
  • the frame 11 and the stator 16 are joined to the first fixed substrate 2 and the second fixed substrate 3.
  • the weight portion 13 is disposed separately from the first and second fixed substrates 2 and 3, and is supported by the frame 11 by a pair of support spring portions 14.
  • a plurality of minute protrusions 13 c that restrict excessive displacement of the weight part 13 are provided so as to protrude from the surfaces of the weight part 13 facing the first and second fixed substrates 2 and 3.
  • the weight portion 13 is formed with concave portions 13a and 13b opened in a rectangular shape. Since the sizes of the recesses 13a and 13b are different from each other, the masses on the left and right of the weight portion 13 are different from each other with a straight line passing through the pair of support spring portions 14 as a boundary.
  • the wiring 28 of the first fixed substrate 2 is electrically connected to the electrode pad 18.
  • the electrode pad 18 is connected to the fixed electrode 25 through the stator 16, the connecting conductor portion 16 d, and the metal wiring 26.
  • the acceleration sensor chip A described above has four pairs of the movable electrode 15 provided on the sensor body 1 and the fixed electrode 25 provided on the first fixed substrate 2.
  • a variable capacitor is configured for each pair.
  • acceleration is applied to the acceleration sensor chip A, that is, the weight portion 13, the support spring portion 14 is twisted and the weight portion 13 is displaced.
  • the facing area and interval between the paired fixed electrode 25 and movable electrode 15 change, and the capacitance of the variable capacitor changes. Therefore, the acceleration sensor chip A can detect acceleration from the change in capacitance.
  • FIGS. 4A to 4E a glass-embedded silicon substrate as an example of the glass substrate 20 used for forming the first fixed substrate 2 shown in FIGS. The manufacturing method will be described.
  • a silicon substrate body 51 having a front surface (upper surface in FIG. 4) and a rear surface (lower surface in FIG. 4) is prepared.
  • a p-type or n-type impurity is added to the entire silicon substrate body 51, and the electrical resistance of the silicon substrate body 51 is sufficiently small.
  • an impurity is added to the entire silicon substrate body 51.
  • the impurity may not be added to the entire silicon substrate body 51. It is sufficient that impurities are added at least to the depth of the portion to be left as the wiring in FIG.
  • a predetermined region on the surface of the silicon substrate body 51 is formed by dry etching such as wet etching or reactive ion etching (RIE) using a TMAH (tetramethylammonium hydroxide) aqueous solution as an etchant.
  • TMAH tetramethylammonium hydroxide
  • the glass substrate 54 is cooled and re-solidified (fourth step). Then, as shown in FIG.4 (e), the part embedded in the recessed part 52 of the silicon substrate main body 51 is left among glass substrates 54, and another part is removed (5th process). Further, the silicon substrate body 51 is left with a portion between the surface and the plane including the bottom surface of the recess 52, and the other portions are removed.
  • the second main surface of the glass substrate 54 (such as grinding using a diamond grindstone, polishing such as chemical mechanical polishing (CMP), or dry etching such as RIE or wet etching using HF is used.
  • the upper surface in FIG. 4 is uniformly scraped to expose the silicon substrate body 51 on the second main surface of the glass substrate 54.
  • the back surface of the silicon substrate body 51 is evenly scraped to expose the glass substrate 54 embedded in the recess 52 on the back surface of the silicon substrate body 51. Either glass or silicon may be removed first.
  • the glass-embedded silicon substrate manufactured by the above steps is obtained by embedding a part of the glass substrate 54 in the silicon substrate body 51 as shown in FIG. 4E is applied to the wiring 28 shown in FIGS. 2 and 3, and the glass substrate 54 shown in FIG. 4E is replaced with the glass substrate shown in FIGS. Apply to 20.
  • the glass-embedded silicon substrate shown in FIG. 4E can be applied to the glass substrate 20 used for forming the first fixed substrate 2 shown in FIGS.
  • this manufacturing apparatus includes a vacuum chamber 305 having a size capable of accommodating the silicon substrate body 51 and the glass substrate 54, and a vacuum pump such as a rotary pump that exhausts the gas in the vacuum chamber 305. 306 at least.
  • this manufacturing apparatus additionally seals the recess 52 by superimposing the first main surface of the glass substrate on the surface of the silicon substrate body 51 in a reduced-pressure atmosphere in the vacuum chamber 305. Means.
  • the manufacturing apparatus includes means for bonding the silicon substrate body 51 and the glass substrate 54 by a method such as anodic bonding, surface activation bonding, and resin bonding in a reduced pressure atmosphere.
  • a method such as anodic bonding, surface activation bonding, and resin bonding in a reduced pressure atmosphere.
  • the recessed part 52 can be sealed in a pressure-reduced atmosphere.
  • this manufacturing apparatus includes a flat plate stage 308 and a heating / pressurizing jig 307.
  • the heating / pressurizing jig 307 includes heating means such as a heater 309 for applying heat to the glass substrate 54, and can apply heat and force to the glass substrate 54 at the same time.
  • the silicon substrate body 51 and the glass substrate 54 are disposed so as to overlap each other between the stage 308 and the heating / pressurizing jig 307.
  • the apparatus of FIG. 5 (b) operates in an air atmosphere.
  • the silicon substrate main body 51 and the glass substrate 54 are carried into the vacuum chamber 305 of the manufacturing apparatus of FIG. 5A, and the vacuum chamber 305 is sealed. Then, the vacuum pump 306 is driven to evacuate the vacuum chamber 305. At this point, at least the recess 52 is not sealed. That is, the first main surface of the glass substrate may be superimposed on the surface of the silicon substrate body 51, but it is not joined. Thereby, when exhausting the inside of the vacuum chamber 305, the gas inside the recess 52 can also be exhausted.
  • the recess 52 is sealed.
  • the silicon substrate body 51 and the glass substrate 54 are stacked in a vacuum atmosphere (S01).
  • Each of the overlapping surfaces of the silicon substrate body 51 and the glass substrate 54 is preferably processed to have a flat surface (reducing the surface roughness), whereby the overlapping surface of the silicon substrate body 51 and the glass substrate 54 is The airtightness of the concave portion 52 can be sealed.
  • the vacuum pump 306 is stopped, the inside of the vacuum chamber 305 is returned to atmospheric pressure, and the bonded silicon substrate body 51 and glass substrate 54 are taken out from the vacuum chamber 305. Since the recess 52 is hermetically sealed, the inside of the recess 52 is kept in a vacuum state.
  • step S03 The silicon substrate body 51 and the glass substrate 54 are disposed between the stage 308 and the heating / pressurizing jig 307 of the manufacturing apparatus in FIG.
  • the heater 309 is turned on to heat the glass substrate 54.
  • the switch of the heater 309 is controlled while monitoring the temperature of the glass substrate 54 to maintain the softening temperature. For example, in the case of Tempax glass, it may be heated to around 820 ° C.
  • step S05 the glass substrate 54 and the silicon substrate body 51 are pressed using a heating / pressurizing jig 307. At this time, since the pressure inside the recess 52 is lower than the outside pressure, the glass is sucked into the recess 52 by this pressure difference. Further, a part of the glass substrate 54 softened by the heat treatment in step S03 and the press treatment in step S05 is embedded in the recess 52 of the silicon substrate body 51 (third step).
  • step S07 when the concave portion 52 is filled with the softened glass substrate 54, the press is stopped, the process proceeds to step S09, the heater 309 is turned off, and a predetermined cooling means is used. Cool 54.
  • the second step and the third step are performed using the manufacturing apparatus shown in FIGS. 5 (a) and 5 (b).
  • the second step in FIG. 4 corresponds to step S01 in FIG. 6, and the third step in FIG. 4 corresponds to steps S03 to S07 in FIG.
  • the atmospheric pressure when performing the second step of sealing the concave portion 52 is set lower than the atmospheric pressure when performing the third step of embedding glass in the concave portion 52.
  • the pressure inside the recess 52 becomes lower than the outside pressure, so that the glass is sucked into the recess 52 due to this pressure difference. Therefore, the glass can be embedded quickly and voids can be suppressed.
  • the second process is performed in a vacuum
  • the third process is performed at atmospheric pressure.
  • Conduct in. When the glass is embedded in the recess 52, the external atmospheric pressure is atmospheric pressure, but the internal pressure of the recess 52 is kept in vacuum, so that the glass is sucked into the recess 52 by this pressure difference. Therefore, the glass can be embedded quickly and voids can be suppressed.
  • the first main surface and the second main surface opposite to the first main surface are described as examples using a flat glass substrate.
  • the present invention is not limited to this.
  • a glass substrate having a thick portion at a position facing the concave portion of the silicon substrate may be prepared, and the thick portion may be opposed to the concave portion to seal the concave portion. If it does in this way, glass can be embedded more effectively in a crevice.
  • this thick portion can be constituted by a convex portion formed on the first main surface or the second main surface, or both main surfaces of the first main surface and the second main surface. You may comprise by forming a convex part in a surface.
  • the first convex portion 210 that enters the concave portion 202 is formed on the first main surface of the glass substrate 204, that is, the surface overlapping the silicon substrate body 201. It may be formed. Accordingly, when a part of the glass substrate 204 is embedded in the recess 202, glass already exists in the recess 202, so that voids are less likely to occur in the recess 202, and the glass can be embedded faster.
  • FIGS. 7A and 7B are the same as the steps shown in FIGS. 4A and 4B, and description thereof is omitted.
  • the first main surface (the lower surface in FIG. 7) of the glass substrate 204 is overlaid on the surface of the silicon substrate body 201 to form the recess 202.
  • Seal (second step).
  • the 1st convex part 210 is formed in the 1st main surface of the glass substrate 204, ie, the surface which overlaps with the silicon substrate main body 201, by blast processing, laser processing, etc. previously.
  • the first convex portion 210 enters the concave portion 202.
  • the first convex portion 210 that enters the concave portion 202 when the second step is performed is formed on the first main surface of the glass substrate 204. Accordingly, when a part of the glass substrate 204 is embedded in the recess 202, glass already exists in the recess 202, so that voids are less likely to occur in the recess 202, and the glass can be embedded faster.
  • the second convex portion 310 is formed on the second main surface of the glass substrate 304, that is, the surface facing the surface overlapping the silicon substrate body 301. It may be formed.
  • FIGS. 8A and 8B are the same as the steps shown in FIGS. 4A and 4B, and a description thereof will be omitted.
  • the first main surface (the lower surface in FIG. 8) of the glass substrate 304 is overlaid on the surface of the silicon substrate body 301 to form the recess 302.
  • Seal (second step) A second convex portion 310 is formed in advance on the second main surface of the glass substrate 304, that is, the surface facing the surface overlapping the silicon substrate body 301 by blasting or laser processing.
  • the second convex portion 310 is formed at the same position as the concave portion 302 when viewed from the normal direction of the first main surface of the glass substrate 304.
  • the second protrusion 310 is located at the same position as the recess 302 when viewed from the normal direction of the first main surface of the glass substrate 304.
  • the force by which the heating / pressurizing jig 307 pushes the glass substrate 304 is concentrated on the second convex portion 310, so that voids are less likely to be generated in the concave portion 302, and the glass can be embedded more quickly.
  • a forward tapered shape may be provided in at least a part of the recess 402 of the silicon substrate body 401. Thereby, glass can be embedded more efficiently.
  • FIG. 9A The process shown in FIG. 9A is the same as the process shown in FIG. As shown in FIG. 9B, for example, a predetermined region on the surface of the silicon substrate body 401 is selectively removed by wet etching having crystal anisotropy to form a recess 402 on the surface of the silicon substrate body 401.
  • the concave portion 402 of the silicon substrate body 401 has a forward tapered shape. That is, the cross-sectional area of the recess 402 parallel to the main surface of the silicon substrate body 401 increases from the bottom surface of the recess 402 toward the main surface of the silicon substrate body 401.
  • the concave portion 402 can be provided with a forward tapered shape, glass can be embedded more efficiently. Therefore, voids are less likely to occur in the recess 402, and the glass can be embedded more quickly.
  • the forward tapered shape provided in the recess 402 may be formed in at least a part of the recess 402. If it is formed at least partially, the effects of void suppression and high processing speed can be obtained.
  • the recess 52 is sealed in a reduced pressure atmosphere (second step), and the glass is embedded in the recess 52 in an atmospheric pressure atmosphere ( (3rd process).
  • the present invention is not limited to this.
  • the recess 52 may be sealed in an atmospheric pressure atmosphere, and glass may be embedded in the recess 52 in a pressurized atmosphere. Also by this, when the glass is embedded in the recess 52, the pressure inside the recess 52 can be made smaller than the pressure outside.
  • the step of forming the recess on the main surface of the silicon substrate body a part of the silicon substrate body made of single crystal silicon is processed to form the recess made of single crystal silicon.
  • the step of forming a recess in the main surface of the silicon substrate body is performed by depositing a silicon film made of polycrystalline silicon on the main surface of the silicon substrate body made of single crystal silicon, and removing a portion of the silicon film to form the recess May be formed.
  • At least a part of the recess 202 of the silicon substrate 201 of the second embodiment and at least a part of the recess 302 of the silicon substrate 301 of the third embodiment are forward-oriented. It is good also as a taper shape of this, Thereby, glass can be embedded more efficiently.

Abstract

The disclosed manufacturing method for a glass-embedded silicon substrate enables the rapid embedding of glass and suppresses voids. Concave sections (52) are formed on the main surface of a silicon substrate main body (51). A first main surface of a glass substrate (54) is superimposed on the main surface of the silicon substrate main body (51), enclosing the concave sections (52) thereof. The glass substrate (54) is softened by applying heat thereto, and part of the glass substrate (54) is embedded in the concave sections (52) of the silicon substrate main body (51). The glass substrate (54) is cooled. The part of the glass substrate (54) embedded in the concave sections (52) of the silicon substrate main body (51) is left behind, and the other part is removed. The air pressure is set lower when implementing the step in which the concave sections (52) are enclosed than when implementing the step in which the part of the glass substrate (54) is embedded in the concave sections (52) of the silicon substrate main body (51).

Description

ガラス埋込シリコン基板の製造方法Method for manufacturing glass-embedded silicon substrate
　本発明は、シリコン基板本体の内部にガラスが配置されたガラス埋込シリコン基板の製造方法に関するものである。 The present invention relates to a method for manufacturing a glass-embedded silicon substrate in which glass is disposed inside a silicon substrate body.
　従来から、微細な構造を有するガラス基板を製造する目的で、例えば、特許文献１に記載された技術が知られている。 Conventionally, for example, a technique described in Patent Document 1 is known for the purpose of manufacturing a glass substrate having a fine structure.
　特許文献１に記載されたガラス材料からなるフラット基板の製造方法では、先ず、平坦なシリコン基板の表面に窪みを形成し、平坦なガラス基板にシリコン基板の窪みが形成された面を重ね合わせる。そして、ガラス基板を加熱することによりガラス基板の一部をこの窪みの中に埋め込む。その後、ガラス基板を再固化させ、フラット基板の表裏面を研磨し、シリコンを除去する。
特表２００４－５２３１２４号公報（特に、第１図参照） In the method for manufacturing a flat substrate made of a glass material described in Patent Document 1, first, a recess is formed on the surface of a flat silicon substrate, and a surface on which the recess of the silicon substrate is formed is superimposed on the flat glass substrate. And a part of glass substrate is embedded in this hollow by heating a glass substrate. Thereafter, the glass substrate is re-solidified, the front and back surfaces of the flat substrate are polished, and silicon is removed.
Japanese translation of PCT publication No. 2004-523124 (in particular, refer to FIG. 1)
　しかし、平坦なガラス基板にシリコン基板の窪みが形成された面を重ね合わせると、窪みの内部空間は閉空間となる。よって、ガラス基板の一部をこの窪みの中に埋め込む際に、窪みの内部の気体が逃げにくくなるため、ガラスの埋め込み工程に時間がかかり、プロセス時間の短縮の弊害となる。また、再固化されたガラス材料にボイドが発生し易くなり、製造歩留まりを低下させてしまう。 However, if the surface on which the depression of the silicon substrate is formed is superimposed on a flat glass substrate, the inner space of the depression becomes a closed space. Therefore, when a part of the glass substrate is embedded in the recess, the gas inside the recess is difficult to escape, so that the glass embedding process takes time, which is an adverse effect of shortening the process time. In addition, voids are easily generated in the re-solidified glass material, and the production yield is reduced.
　そこで、本発明は、ガラスの埋め込み工程に時間を短縮でき、プロセス時間の短縮が可能なガラス埋込シリコン基板の製造方法を提供することを目的とする。
　また、本発明は、ボイドの発生を抑制するガラス埋込シリコン基板の製造方法を提供することを他の目的とする。 Therefore, an object of the present invention is to provide a method for manufacturing a glass-embedded silicon substrate, which can shorten the time for the glass embedding process and can shorten the process time.
Another object of the present invention is to provide a method for manufacturing a glass-embedded silicon substrate that suppresses the generation of voids.
　上記目的を達成する本発明の特徴は、ガラス埋込シリコン基板の製造方法に関する。この製造方法は、第１の工程～第５の工程を少なくとも備える。第１の工程では、シリコン基板本体の主面に凹部を形成する。第２の工程では、前記凹部に対向する位置に肉厚部を有するガラス基板を準備し、シリコン基板本体の主面にガラス基板の第１の主面を重ね合わせて、凹部を密閉する。第３の工程では、ガラス基板に熱を加えて軟化させて、このガラス基板の一部をシリコン基板本体の凹部に埋め込む。第２の工程を実施する時の気圧を、第３の工程を実施する時の気圧よりも低くする。第４の工程では、ガラス基板を冷却する。第５の工程では、ガラス基板のうち、シリコン基板本体の凹部に埋め込まれた部分を残し、他の部分を除去する。 The feature of the present invention that achieves the above object relates to a method for manufacturing a glass-embedded silicon substrate. This manufacturing method includes at least first to fifth steps. In the first step, a recess is formed in the main surface of the silicon substrate body. In the second step, a glass substrate having a thick portion at a position facing the recess is prepared, the first main surface of the glass substrate is superimposed on the main surface of the silicon substrate body, and the recess is sealed. In the third step, the glass substrate is softened by applying heat, and a part of the glass substrate is embedded in the recess of the silicon substrate body. The atmospheric pressure when the second step is performed is set lower than the atmospheric pressure when the third step is performed. In the fourth step, the glass substrate is cooled. In the fifth step, the portion of the glass substrate embedded in the recess of the silicon substrate body is left and the other portion is removed.
　本発明のガラス埋込シリコン基板の製造方法によれば、前記凹部に対向する位置に肉厚部を有するガラス基板を用いているので、迅速にガラスを埋め込むことができる。 According to the method for manufacturing a glass-embedded silicon substrate of the present invention, since a glass substrate having a thick portion at a position facing the concave portion is used, glass can be embedded quickly.
図１（ａ）は、本発明の第１の実施の形態に係わる半導体装置のうちパッケージ蓋の構成を示す斜視図であり、図１（ｂ）は、本発明の第１の実施の形態に係わる半導体装置のうちパッケージ蓋を除く構成を示す斜視図である。FIG. 1A is a perspective view showing a configuration of a package lid in the semiconductor device according to the first embodiment of the present invention, and FIG. 1B is a diagram illustrating the first embodiment of the present invention. It is a perspective view which shows the structure except a package lid | cover among the semiconductor devices concerning. 図１の加速度センサチップＡの概略構成を示す分解斜視図である。It is a disassembled perspective view which shows schematic structure of the acceleration sensor chip | tip A of FIG. 図２の加速度センサチップＡの概略構成を示す断面図である。FIG. 3 is a cross-sectional view illustrating a schematic configuration of an acceleration sensor chip A in FIG. 2. 図４（ａ）～図４（ｅ）は、図２及び図３に示した第１の固定基板２の形成に用いられるガラス基板２０の一例としてのガラス埋込シリコン基板の製造方法を示す工程断面図である。4 (a) to 4 (e) show a process for producing a glass-embedded silicon substrate as an example of the glass substrate 20 used for forming the first fixed substrate 2 shown in FIGS. It is sectional drawing. 図５（ａ）は、図４（ｃ）に示した第２の工程を実施する為の具体的な加工装置の構成を示す断面図であり、図５（ｂ）は、図４（ｄ）に示した第３の工程を実施する為の具体的な加工装置の構成を示す断面図である。FIG. 5A is a cross-sectional view showing the configuration of a specific processing apparatus for performing the second step shown in FIG. 4C, and FIG. 5B is a cross-sectional view of FIG. It is sectional drawing which shows the structure of the specific processing apparatus for enforcing the 3rd process shown to. 図５（ａ）及び図５（ｂ）に示した製造装置を用いて行う第２の工程及び第３の工程の詳細な手順を示すフローチャートである。It is a flowchart which shows the detailed procedure of the 2nd process and 3rd process performed using the manufacturing apparatus shown to Fig.5 (a) and FIG.5 (b). 図７（ａ）～図７（ｅ）は、第２の実施の形態に係わるガラス埋込シリコン基板の製造方法を示す工程断面図である。7A to 7E are process cross-sectional views illustrating a method for manufacturing a glass-embedded silicon substrate according to the second embodiment. 図８（ａ）～図８（ｅ）は、第３の実施の形態に係わるガラス埋込シリコン基板の製造方法を示す工程断面図である。FIGS. 8A to 8E are process cross-sectional views illustrating a method for manufacturing a glass-embedded silicon substrate according to the third embodiment. 図９（ａ）～図９（ｅ）は、第４の実施の形態に係わるガラス埋込シリコン基板の製造方法を示す工程断面図である。FIG. 9A to FIG. 9E are process cross-sectional views illustrating a method for manufacturing a glass-embedded silicon substrate according to the fourth embodiment.
　５１　　シリコン基板本体
　５２　　凹部
　５３　　貫通孔
　５４　　ガラス基板
　２１０　　第１の凸部
　３１０　　第２の凸部 51 Silicon substrate body 52 Concave portion 53 Through hole 54 Glass substrate 210 First convex portion 310 Second convex portion
　以下図面を参照して、本発明の実施の形態を説明する。図面の記載において同一部分には同一符号を付している。 Embodiments of the present invention will be described below with reference to the drawings. In the description of the drawings, the same parts are denoted by the same reference numerals.
（第１の実施の形態）
　図１（ａ）及び図１（ｂ）を参照して、本発明の第１の実施の形態に係わる半導体装置の概略構成を説明する。半導体装置は、ＭＥＭＳデバイスの一例としての加速度センサチップＡと、加速度センサチップＡから出力された信号を処理する信号処理回路が形成された制御ＩＣチップＢと、加速度センサチップＡ及び制御ＩＣチップＢが収納された表面実装型のパッケージ１０１とを備える。 (First embodiment)
With reference to FIGS. 1A and 1B, a schematic configuration of a semiconductor device according to the first embodiment of the present invention will be described. The semiconductor device includes an acceleration sensor chip A as an example of a MEMS device, a control IC chip B on which a signal processing circuit that processes a signal output from the acceleration sensor chip A is formed, and an acceleration sensor chip A and a control IC chip B. Are mounted on the surface mounting type package 101.
　パッケージ１０１は、図１（ｂ）における上面に位置する一面が開放された箱形の形状を有するプラスチックパッケージ本体１０２と、パッケージ１０１の開放された一面を閉塞するパッケージ蓋（リッド）１０３とを備える。プラスチックパッケージ本体１０２は、加速度センサチップＡ及び制御ＩＣチップＢに電気的に接続される複数のリード１１２を備える。各リード１１２は、プラスチックパッケージ本体１０２の外側面から導出されたアウタリード１１２ｂと、プラスチックパッケージ本体１０２の内側面から導出されたインナリード１１２ａとを備える。各インナリード１１２ａは、ボンディングワイヤＷを通じて、制御ＩＣチップＢが備える各パッドに電気的に接続されている。 The package 101 includes a plastic package main body 102 having a box-like shape with one open surface located on the upper surface in FIG. 1B and a package lid (lid) 103 that closes one open surface of the package 101. . The plastic package body 102 includes a plurality of leads 112 that are electrically connected to the acceleration sensor chip A and the control IC chip B. Each lead 112 includes an outer lead 112 b led out from the outer side surface of the plastic package main body 102 and an inner lead 112 a led out from the inner side surface of the plastic package main body 102. Each inner lead 112a is electrically connected to each pad included in the control IC chip B through a bonding wire W.
　加速度センサチップＡは、加速度センサチップＡの外周形状に基づいて規定した仮想三角形の３つの頂点に対応する３箇所に配置された接着部１０４により、プラスチックパッケージ本体１０２の底部に位置する搭載面１０２ａに固着されている。接着部１０４は、プラスチックパッケージ本体１０２に連続して一体に突設されている円錐台状の突起部と、この突起部を被覆する接着剤とからなる。接着剤は、例えば、弾性率が１ＭＰａ以下のシリコーン樹脂などのシリコーン系樹脂からなる。 The acceleration sensor chip A has a mounting surface 102a located at the bottom of the plastic package main body 102 by the adhesive portions 104 arranged at three locations corresponding to the three vertices of the virtual triangle defined based on the outer peripheral shape of the acceleration sensor chip A. It is fixed to. The adhesive portion 104 includes a frustoconical protrusion that is continuously and integrally provided on the plastic package body 102, and an adhesive that covers the protrusion. The adhesive is made of, for example, a silicone resin such as a silicone resin having an elastic modulus of 1 MPa or less.
　ここで、加速度センサチップＡが備える総てのパッドは、プラスチックパッケージ本体１０２の開放された一面に対向する加速度センサチップＡの主面において、この主面の１辺に沿って配置されている。この１辺の両端の２箇所と、当該１辺に平行な辺の１箇所（例えば、中央部）との３箇所とに頂点を有する仮想三角形の各頂点に接着部１０４が位置
している。これにより、各パッドにボンディングワイヤＷを安定してボンディングすることができる。なお、接着部１０４の位置に関し、上記１辺に平行な辺の１箇所については、中央部に限らず、例えば、両端の一方でもよいが、中央部の方が半導体素子Ａをより安定して支持することができるとともに、各パッドにボンディングワイヤＷを安定してボンディングすることができる。 Here, all the pads included in the acceleration sensor chip A are arranged along one side of the main surface of the acceleration sensor chip A facing the open surface of the plastic package main body 102. The adhesive portion 104 is located at each vertex of a virtual triangle having vertices at two locations at both ends of the one side and one location (for example, the central portion) parallel to the one side. Thereby, the bonding wire W can be stably bonded to each pad. Regarding the position of the bonding portion 104, one portion of the side parallel to the one side is not limited to the central portion, and may be, for example, one of both ends, but the central portion makes the semiconductor element A more stable. It can be supported and the bonding wire W can be stably bonded to each pad.
　制御ＩＣチップＢは、単結晶シリコン等から成る半導体基板上に形成された複数の半導体素子、これらを接続する配線、及び半導体素子や配線を外部環境から保護するパッシベーション膜からなる半導体チップである。そして、制御ＩＣチップＢの裏面全体がシリコーン系樹脂によりプラスチックパッケージ本体１０２の底面に固着されている。制御ＩＣチップＢ上に形成される信号処理回路は、加速度センサチップＡの機能に応じて適宜設計すればよく、加速度センサチップＡと協働するものであればよい。例えば、制御ＩＣチップＢをＡＳＩＣ（Application　Specific　ＩＣ）として形成することができる。 The control IC chip B is a semiconductor chip composed of a plurality of semiconductor elements formed on a semiconductor substrate made of single crystal silicon or the like, wirings connecting them, and a passivation film that protects the semiconductor elements and wirings from the external environment. The entire back surface of the control IC chip B is fixed to the bottom surface of the plastic package body 102 with a silicone resin. The signal processing circuit formed on the control IC chip B may be appropriately designed according to the function of the acceleration sensor chip A, and may be any one that cooperates with the acceleration sensor chip A. For example, the control IC chip B can be formed as an ASIC (Application Specific IC).
　図１の半導体装置を製造するには、先ず、加速度センサチップＡ及び制御ＩＣチップＢをプラスチックパッケージ本体１０２に固着するダイボンディング工程を行う。そして、加速度センサチップＡと制御ＩＣチップＢとの間、制御ＩＣチップＢとインナリード１１２ａとの間を、それぞれボンディングワイヤＷを介して電気的に接続するワイヤボンディング工程を行う。その後、樹脂被覆部１１６を形成する樹脂被覆部形成工程を行い、続いて、パッケージ蓋（リッド）１０３の外周を、プラスチックパッケージ本体１０２に接合するシーリング工程を行う。これにより、プラスチックパッケージ本体１０２の内部は気密状態で封止される。なお、パッケージ蓋１０３の適宜部位には、レーザマーキング技術により、製品名称や製造日時などを示す表記１１３が形成されている。 In order to manufacture the semiconductor device of FIG. 1, first, a die bonding process for fixing the acceleration sensor chip A and the control IC chip B to the plastic package body 102 is performed. Then, a wire bonding step of electrically connecting the acceleration sensor chip A and the control IC chip B and the control IC chip B and the inner lead 112a via the bonding wires W is performed. Thereafter, a resin coating portion forming step for forming the resin coating portion 116 is performed, and subsequently, a sealing step for bonding the outer periphery of the package lid 103 to the plastic package body 102 is performed. Thereby, the inside of the plastic package main body 102 is sealed in an airtight state. Note that a notation 113 indicating a product name, a manufacturing date and the like is formed in an appropriate part of the package lid 103 by a laser marking technique.
　なお、制御ＩＣチップＢが１枚のシリコン基板を用いて形成されているのに対して、加速度センサチップＡは、積層された複数の基板を用いて形成されている。よって、加速度センサチップＡの厚みが制御ＩＣチップＢの厚みに比べて厚くなっているので、プラスチックパッケージ本体１０２の底部において加速度センサチップＡを搭載する搭載面１０２ａを制御ＩＣチップＢの搭載部位よりも凹ませてある。したがって、プラスチックパッケージ本体１０２の底面について、加速度センサチップＡを搭載する部位の厚みは他の部位に比べて薄くなっている。 The control IC chip B is formed using a single silicon substrate, whereas the acceleration sensor chip A is formed using a plurality of stacked substrates. Therefore, since the thickness of the acceleration sensor chip A is thicker than the thickness of the control IC chip B, the mounting surface 102a on which the acceleration sensor chip A is mounted at the bottom of the plastic package body 102 is formed from the mounting portion of the control IC chip B. Is also recessed. Therefore, on the bottom surface of the plastic package main body 102, the thickness of the portion where the acceleration sensor chip A is mounted is thinner than other portions.
　更に、本発明の第１の実施の形態では、プラスチックパッケージ本体１０２の外形を直方体としてあるが、これは一例であり、加速度センサチップＡや制御ＩＣチップＢの外形、リード１１２の本数やピッチなどに応じて適宜設定すればよい。 Furthermore, in the first embodiment of the present invention, the outer shape of the plastic package body 102 is a rectangular parallelepiped, but this is only an example, and the outer shape of the acceleration sensor chip A and the control IC chip B, the number of leads 112, the pitch, etc. What is necessary is just to set suitably according to.
　プラスチックパッケージ本体１０２の材料としては、熱可塑性樹脂の一種であって、酸素および水蒸気の透過率が極めて低い液晶性ポリエステル（ＬＣＰ）を採用する。しかし、ＬＣＰに限らず、例えば、ポリフェニレンサルファイト（ＰＰＳ）、ポリビスアミドトリアゾール（ＰＢＴ）などを採用してもよい。 As the material of the plastic package body 102, a liquid crystalline polyester (LCP) which is a kind of thermoplastic resin and has extremely low oxygen and water vapor transmission rates is employed. However, not limited to LCP, for example, polyphenylene sulfite (PPS), polybisamide triazole (PBT), or the like may be employed.
　また、各リード１１２の材料、つまり、各リード１１２の基礎となるリードフレームの材料としては、銅合金の中でもばね性の高いりん青銅を採用する。ここでは、リードフレームとして、材質がりん青銅で板厚が０．２ｍｍのリードフレームを用い、厚みが２μｍ～４μｍのＮｉ膜と、厚みが０．２μｍ～０．３μｍのＡｕ膜との積層膜からなるめっき膜を電解めっき法により形成してある。これにより、ワイヤボンディングの接合信頼性と半田付け信頼性とを両立させることができる。また、熱可塑性樹脂成形品のプラスパッケージ本体１０２は、リード１１２が同時一体に成形されている。しかし、熱可塑性樹脂であるＬＣＰにより形成されるプラスチックパッケージ本体１０２とリード１１２のＡｕ膜とは密着性が低い。したがって、上述のリードフレームのうちプラスチックパッケージ本体１０２に埋設される部位にパンチ穴を設けることで各リード１１２が抜け落ちるのを防止する。 Also, as the material of each lead 112, that is, the material of the lead frame that is the basis of each lead 112, phosphor bronze having a high spring property among copper alloys is adopted. Here, a lead frame made of phosphor bronze and a thickness of 0.2 mm is used as the lead frame, and a laminated film of a Ni film having a thickness of 2 μm to 4 μm and an Au film having a thickness of 0.2 μm to 0.3 μm. A plating film made of is formed by an electrolytic plating method. Thereby, it is possible to achieve both the bonding reliability of wire bonding and the soldering reliability. Further, the plus package body 102 of the thermoplastic resin molded product has leads 112 formed integrally at the same time. However, the adhesion between the plastic package body 102 formed by LCP, which is a thermoplastic resin, and the Au film of the lead 112 is low. Therefore, the lead 112 is prevented from falling off by providing a punch hole in a portion of the above-described lead frame embedded in the plastic package body 102.
　また、図１の半導体装置は、インナリード１１２ａの露出部位およびその周囲を覆う樹脂被覆部１１６が設けられている。樹脂被覆部１１６は、例えば、アミン系エポキシ樹脂などのエポキシ系樹脂などの非透湿性の樹脂からなる。ワイヤボンディング工程の後に、ディスペンサを用いてこの非透湿性の樹脂を塗布し、これを硬化させることで、気密性を向上させている。なお、この非透湿性の樹脂に代えてセラミックスを用いてもよく、セラミックスを用いる場合には、プラズマ溶射などの技術を用いて局所的に吹き付ければよい。 Further, the semiconductor device of FIG. 1 is provided with a resin coating portion 116 that covers the exposed portion of the inner lead 112a and the periphery thereof. The resin coating portion 116 is made of a moisture-impermeable resin such as an epoxy resin such as an amine epoxy resin. After the wire bonding process, this non-moisture permeable resin is applied using a dispenser and cured to improve airtightness. Note that ceramics may be used instead of the moisture-impermeable resin, and when ceramics are used, they may be sprayed locally using a technique such as plasma spraying.
　また、ボンディングワイヤＷとしては、Ａｌワイヤに比べて耐腐食性の高いＡｕワイヤを用いる。また、直径が２５μｍのＡｕワイヤを採用するが、これに限らず、例えば、直径が２０μｍ～５０μｍのＡｕワイヤから適宜選択すればよい。 Also, as the bonding wire W, an Au wire having higher corrosion resistance than that of an Al wire is used. Further, although an Au wire having a diameter of 25 μm is adopted, the present invention is not limited to this, and for example, an Au wire having a diameter of 20 μm to 50 μm may be appropriately selected.
　図２を参照して、図１の加速度センサチップＡの概略構成を説明する。加速度センサチップＡは、静電容量型の加速度センサチップであって、ＳＯＩ(Silicon On Insulator)
基板１０を用いて形成されたセンサ本体１と、ガラス基板２０を用いて形成された第１の固定基板２と、ガラス基板３０を用いて形成された第２の固定基板３とを備えている。第１の固定基板２は、センサ本体１の一表面側（図２における上面側）に固着され、第２の固定基板３は、センサ本体１の他表面側（図２における下面側）に固着される。第１及び第２の固定基板２、３はセンサ本体１と同じ外形寸法に形成されている。 A schematic configuration of the acceleration sensor chip A of FIG. 1 will be described with reference to FIG. The acceleration sensor chip A is a capacitance type acceleration sensor chip, which is an SOI (Silicon On Insulator).
A sensor main body 1 formed using a substrate 10, a first fixed substrate 2 formed using a glass substrate 20, and a second fixed substrate 3 formed using a glass substrate 30 are provided. . The first fixed substrate 2 is fixed to one surface side (upper surface side in FIG. 2) of the sensor body 1, and the second fixed substrate 3 is fixed to the other surface side (lower surface side in FIG. 2) of the sensor body 1. Is done. The first and second fixed substrates 2 and 3 are formed to have the same outer dimensions as the sensor body 1.
　なお、図２は、センサ本体１、第１の固定基板２及び第２の固定基板３のそれぞれの構成を示すべく、センサ本体１、第１の固定基板２及び第２の固定基板３が分離した状態を示している。また、センサ本体１は、ＳＯＩ基板１０に限らず、例えば、絶縁層を備えない通常のシリコン基板を用いて形成してもよい。また、第１及び第２の固定基板２、３は、それぞれ、シリコン基板及びガラス基板のどちらで形成してもかまわない。 2 shows that the sensor main body 1, the first fixed substrate 2 and the second fixed substrate 3 are separated to show the respective configurations of the sensor main body 1, the first fixed substrate 2 and the second fixed substrate 3. Shows the state. The sensor body 1 is not limited to the SOI substrate 10 and may be formed using, for example, a normal silicon substrate that does not include an insulating layer. Further, the first and second fixed substrates 2 and 3 may be formed of either a silicon substrate or a glass substrate, respectively.
　センサ本体１は、２つの平面視矩形状の開口窓１２が上記一表面に沿って並設するフレーム部１１と、フレーム部１１の各開口窓１２の内側に配置された２つの平面視矩形状の重り部１３と、フレーム部１１と重り部１３との間を連結する各一対の支持ばね部１４とを備える。 The sensor main body 1 includes a frame portion 11 in which two rectangular windows 12 in a plan view are arranged side by side along the one surface, and two rectangular shapes in a plan view arranged inside each open window 12 of the frame portion 11. The weight part 13 and a pair of support spring parts 14 for connecting the frame part 11 and the weight part 13 to each other are provided.
　２つの平面視矩形状の重り部１３は、第１及び第２の固定基板２、３からそれぞれ離間して配置されている。第１の固定基板２に対向する各重り部１３の主面上に可動電極１５Ａ、１５Ｂがそれぞれ配置されている。重り部１３の周囲を囲むフレーム部１１の外周全体が第１及び第２の固定基板２、３に接合されている。これにより、フレーム部１１と第１及び第２の固定基板２、３は、重り部１３及び後述する固定子１６を収納するチップサイズパッケージを構成している。 The two weight parts 13 having a rectangular shape in a plan view are arranged separately from the first and second fixed substrates 2 and 3, respectively. Movable electrodes 15A and 15B are arranged on the main surface of each weight portion 13 facing the first fixed substrate 2, respectively. The entire outer periphery of the frame portion 11 surrounding the weight portion 13 is joined to the first and second fixed substrates 2 and 3. Thus, the frame portion 11 and the first and second fixed substrates 2 and 3 constitute a chip size package that houses the weight portion 13 and a stator 16 described later.
　一対の支持ばね部１４は、フレーム部１１の各開口窓１２の内側で重り部１３の重心を通る直線に沿って重り部１３を挟む形で配置されている。各支持ばね部１４は、ねじれ変形が可能なトーションばね（トーションバー）であって、フレーム部１１及び重り部１３に比べて薄肉に形成されており、重り部１３は、フレーム部１１に対して一対の支持ばね部１４の回りで変位可能となっている。 The pair of support spring portions 14 are arranged so as to sandwich the weight portion 13 along a straight line passing through the center of gravity of the weight portion 13 inside each opening window 12 of the frame portion 11. Each support spring portion 14 is a torsion spring (torsion bar) capable of torsional deformation, and is formed to be thinner than the frame portion 11 and the weight portion 13. It can be displaced around the pair of support spring portions 14.
　センサ本体１のフレーム部１１には、各開口窓１２それぞれに連通する平面視矩形状の窓孔１７が２つの開口窓１２と同じ方向に並設されている。各窓孔１７の内側には、それぞれ２つの固定子１６が一対の支持ばね部１４の並設方向に沿って配置されている。 In the frame portion 11 of the sensor body 1, a rectangular window hole 17 in plan view that communicates with each opening window 12 is arranged in the same direction as the two opening windows 12. Inside each window hole 17, two stators 16 are arranged along the direction in which the pair of support spring portions 14 are arranged side by side.
　各固定子１６と窓孔１７の内周面との間、各固定子１６と重り部１３の外周面との間、及び隣り合う固定子１６同士の間には、それぞれ隙間が形成され、互いに分離独立して電気的に絶縁されている。各固定子１６は、第１及び第２の固定基板２、３にそれぞれ接合されている。また、センサ本体１の一表面側において、各固定子１６には、例えば、Ａｌ－Ｓｉ膜などの金属薄膜からなる円形状の電極パッド１８が形成されている。また同様に、フレーム部１１において隣り合う窓孔１７の間の部位にも、例えば、Ａｌ－Ｓｉ膜などの金属薄膜からなる円形状の電極パッド１８が形成されている。 A gap is formed between each stator 16 and the inner peripheral surface of the window hole 17, between each stator 16 and the outer peripheral surface of the weight portion 13, and between adjacent stators 16. Separated and independently electrically insulated. Each stator 16 is joined to the first and second fixed substrates 2 and 3, respectively. In addition, on one surface side of the sensor body 1, each stator 16 is formed with a circular electrode pad 18 made of a metal thin film such as an Al—Si film. Similarly, a circular electrode pad 18 made of, for example, a metal thin film such as an Al—Si film is formed in a portion between adjacent window holes 17 in the frame portion 11.
　各固定子１６に形成された各電極パッド１８は、後述の各固定電極２５に電気的にそれぞれ接続され、フレーム部１１に形成された電極パッド１８は、可動電極１５Ａ及び可動電極１５Ｂに電気的に接続されている。以上説明した複数の電極パッド１８は、加速度センサチップＡの矩形状の外周形状の１辺に沿って配置されている。 Each electrode pad 18 formed on each stator 16 is electrically connected to each fixed electrode 25 described later, and the electrode pad 18 formed on the frame portion 11 is electrically connected to the movable electrode 15A and the movable electrode 15B. It is connected to the. The plurality of electrode pads 18 described above are arranged along one side of the rectangular outer peripheral shape of the acceleration sensor chip A.
　第１の固定基板２は、第１の固定基板２の第１の主面とこれに対向する第２の主面（センサ本体１に重なり合う面）との間を貫通している複数の配線２８と、第２の主面上に形成された複数の固定電極２５とを備える。 The first fixed substrate 2 includes a plurality of wirings 28 penetrating between a first main surface of the first fixed substrate 2 and a second main surface (a surface overlapping the sensor main body 1) facing the first main surface. And a plurality of fixed electrodes 25 formed on the second main surface.
　固定電極２５Ａａ及び固定電極２５Ａｂは、対を成して可動電極１５Ａに対向して配置されている。同様に、固定電極２５Ｂａ及び固定電極２５Ｂｂは、対を成して可動電極１５Ｂに対向して配置されている。各固定電極２５は、例えば、Ａｌ－Ｓｉ膜などの金属薄膜からなる。 The fixed electrode 25Aa and the fixed electrode 25Ab are arranged in a pair so as to face the movable electrode 15A. Similarly, the fixed electrode 25Ba and the fixed electrode 25Bb are arranged in a pair so as to face the movable electrode 15B. Each fixed electrode 25 is made of a metal thin film such as an Al—Si film, for example.
　各配線２８は、第１の固定基板２の第２の主面において、センサ本体１の電極パッド１８にそれぞれ電気的に接続されている。これにより、電極パッド１８を介して、各固定電極２５の電位及び可動電極１５の電位をそれぞれ加速度センサチップＡの外部へ取り出すことができる。 Each wiring 28 is electrically connected to the electrode pad 18 of the sensor body 1 on the second main surface of the first fixed substrate 2. As a result, the potential of each fixed electrode 25 and the potential of the movable electrode 15 can be taken out from the acceleration sensor chip A via the electrode pad 18.
　第２の固定基板３の一表面（センサ本体１に重なり合う面）であって、重り部１３と対応する位置に、例えば、Ａｌ－Ｓｉ膜などの金属薄膜からなる付着防止膜３５が配置されている。付着防止膜３５は、変位する重り部１３の付着を防止する。 An adhesion preventing film 35 made of a metal thin film such as an Al—Si film is disposed on one surface of the second fixed substrate 3 (a surface overlapping the sensor body 1) and at a position corresponding to the weight portion 13. Yes. The adhesion preventing film 35 prevents adhesion of the weight part 13 that is displaced.
　図３を参照して、図２の加速度センサチップＡの断面構成を説明する。図３は、一対の支持ばね部１４を通る直線に垂直な切断面における加速度センサチップＡの構成を示す。センサ本体１はＳＯＩ基板１０を用いて形成されている。ＳＯＩ基板１０は、単結晶シリコンからなる支持基板１０ａと、支持基板１０ａの上に配置されたシリコン酸化膜からなる絶縁層１０ｂと、絶縁層１０ｂの上に配置されたｎ形のシリコン層（活性層）１０ｃとを有する。 Referring to FIG. 3, the cross-sectional configuration of the acceleration sensor chip A in FIG. 2 will be described. FIG. 3 shows a configuration of the acceleration sensor chip A on a cut surface perpendicular to a straight line passing through the pair of support spring portions 14. The sensor body 1 is formed using an SOI substrate 10. The SOI substrate 10 includes a support substrate 10a made of single crystal silicon, an insulating layer 10b made of a silicon oxide film arranged on the support substrate 10a, and an n-type silicon layer (active) arranged on the insulating layer 10b. Layer) 10c.
　センサ本体１のうち、フレーム１１及び固定子１６は、第１の固定基板２及び第２の固定基板３に接合されている。これに対して、重り部１３は、第１及び第２の固定基板２、３からそれぞれ離間して配置され、一対の支持ばね部１４によりフレーム１１に支持されている。 In the sensor body 1, the frame 11 and the stator 16 are joined to the first fixed substrate 2 and the second fixed substrate 3. On the other hand, the weight portion 13 is disposed separately from the first and second fixed substrates 2 and 3, and is supported by the frame 11 by a pair of support spring portions 14.
　重り部１３の過度の変位を規制する複数の微小な突起部１３ｃが、重り部１３における第１及び第２の固定基板２、３のそれぞれとの対向面から突設されている。重り部１３には、矩形状に開口された凹部１３ａ、１３ｂが形成されている。凹部１３ａ、１３ｂは互いに大きさが異なるため、一対の支持ばね部１４を通る直線を境にして、重り部１３の左右の質量が異なっている。 A plurality of minute protrusions 13 c that restrict excessive displacement of the weight part 13 are provided so as to protrude from the surfaces of the weight part 13 facing the first and second fixed substrates 2 and 3. The weight portion 13 is formed with concave portions 13a and 13b opened in a rectangular shape. Since the sizes of the recesses 13a and 13b are different from each other, the masses on the left and right of the weight portion 13 are different from each other with a straight line passing through the pair of support spring portions 14 as a boundary.
　第１の固定基板２の配線２８は、電極パッド１８に電気的に接続されている。電極パッド１８は、固定子１６、連絡用導体部１６ｄ、金属配線２６を通じて、固定電極２５に接続されている。 The wiring 28 of the first fixed substrate 2 is electrically connected to the electrode pad 18. The electrode pad 18 is connected to the fixed electrode 25 through the stator 16, the connecting conductor portion 16 d, and the metal wiring 26.
　上述の加速度センサチップＡは、センサ本体１に設けられた可動電極１５と第１の固定基板２に設けられた固定電極２５との対を４対有し、可動電極１５と固定電極２５との対ごとに可変容量コンデンサが構成されている。加速度センサチップＡ、すなわち重り部１３に加速度が加わると、支持ばね部１４がねじれて、重り部１３が変位する。これにより、対をなす固定電極２５と可動電極１５との対向面積及び間隔が変化し、可変容量コンデンサの静電容量が変化する。よって、加速度センサチップＡは、この静電容量の変化から加速度を検出することができる。 The acceleration sensor chip A described above has four pairs of the movable electrode 15 provided on the sensor body 1 and the fixed electrode 25 provided on the first fixed substrate 2. A variable capacitor is configured for each pair. When acceleration is applied to the acceleration sensor chip A, that is, the weight portion 13, the support spring portion 14 is twisted and the weight portion 13 is displaced. As a result, the facing area and interval between the paired fixed electrode 25 and movable electrode 15 change, and the capacitance of the variable capacitor changes. Therefore, the acceleration sensor chip A can detect acceleration from the change in capacitance.
　次に、図４（ａ）～図４（ｅ）を参照して、図２及び図３に示した第１の固定基板２の形成に用いられるガラス基板２０の一例としてのガラス埋込シリコン基板の製造方法について説明する。 Next, referring to FIGS. 4A to 4E, a glass-embedded silicon substrate as an example of the glass substrate 20 used for forming the first fixed substrate 2 shown in FIGS. The manufacturing method will be described.
　（イ）先ず、図４（ａ）に示すように、対向する表面（図４における上面）及び裏面（図４における下面）を有するシリコン基板本体５１を用意する。シリコン基板本体５１の全体には、ｐ型或いはｎ型の不純物が添加され、シリコン基板本体５１の電気抵抗は十分に小さい。なお、ここでは、シリコン基板本体５１の全体に不純物を添加する場合を説明するが、シリコン基板本体５１全体に添加されていなくても構わない。少なくとも、図４（ｅ）の配線として残す部分の深さまで不純物が添加されていればよい。そして、図４（ｂ）に示すように、ＴＭＡＨ（水酸化テトラメチルアンモニウム）水溶液をエッチャントとするウェットエッチングや反応性イオンエッチング（ＲＩＥ）などのドライエッチングによりシリコン基板本体５１の表面の所定領域を選択的に除去して、シリコン基板本体５１の表面に凹部５２を形成する（第１の工程）。 (A) First, as shown in FIG. 4A, a silicon substrate body 51 having a front surface (upper surface in FIG. 4) and a rear surface (lower surface in FIG. 4) is prepared. A p-type or n-type impurity is added to the entire silicon substrate body 51, and the electrical resistance of the silicon substrate body 51 is sufficiently small. Here, a case where an impurity is added to the entire silicon substrate body 51 will be described. However, the impurity may not be added to the entire silicon substrate body 51. It is sufficient that impurities are added at least to the depth of the portion to be left as the wiring in FIG. 4B, a predetermined region on the surface of the silicon substrate body 51 is formed by dry etching such as wet etching or reactive ion etching (RIE) using a TMAH (tetramethylammonium hydroxide) aqueous solution as an etchant. The recess 52 is formed on the surface of the silicon substrate body 51 by selectively removing it (first step).
　（ロ）次に、減圧雰囲気において、図４（ｃ）に示すように、シリコン基板本体５１の表面にガラス基板の第１の主面（図４における下面）を重ね合わせて、凹部５２を密閉する（第２の工程）。その後、大気圧雰囲気において、ガラス基板５４に熱を加えて、ガラス基板５４の温度をその軟化温度まで上昇させる。そして、図４（ｄ）に示すように、軟化したガラス基板５４の一部をシリコン基板本体５１の凹部５２に埋め込む（第３の工程）。なお、第２の工程及び第３の工程の詳細な手順は、図５及び図６を参照して後述する。 (B) Next, in a reduced pressure atmosphere, as shown in FIG. 4C, the first main surface (the lower surface in FIG. 4) of the glass substrate is overlaid on the surface of the silicon substrate body 51 to seal the recess 52. (Second step). Thereafter, heat is applied to the glass substrate 54 in an atmospheric pressure atmosphere to raise the temperature of the glass substrate 54 to its softening temperature. And as shown in FIG.4 (d), a part of softened glass substrate 54 is embedded in the recessed part 52 of the silicon substrate main body 51 (3rd process). The detailed procedure of the second step and the third step will be described later with reference to FIGS.
　（ハ）ガラス基板５４を冷却して、再固化させる（第４の工程）。その後、図４（ｅ）に示すように、ガラス基板５４のうち、シリコン基板本体５１の凹部５２に埋め込まれた部分を残し、他の部分を除去する（第５の工程）。また、シリコン基板本体５１のうち、その表面と凹部５２の底面を含む平面との間にある部分を残し、その他の部分を除去する。 (C) The glass substrate 54 is cooled and re-solidified (fourth step). Then, as shown in FIG.4 (e), the part embedded in the recessed part 52 of the silicon substrate main body 51 is left among glass substrates 54, and another part is removed (5th process). Further, the silicon substrate body 51 is left with a portion between the surface and the plane including the bottom surface of the recess 52, and the other portions are removed.
　具体的には、ダイヤモンド砥石を用いた研削、化学機械研磨（ＣＭＰ）等の研磨、或いはＲＩＥなどのドライエッチングやＨＦによるウェットエッチングなどの方法を用いて、ガラス基板５４の第２の主面（図４における上面）を均一に削り取り、ガラス基板５４の第２の主面にシリコン基板本体５１を露出させる。同様に、研削、研磨、或いはエッチングなどの方法を用いて、シリコン基板本体５１の裏面を均一に削り取り、シリコン基板本体５１の裏面に凹部５２に埋め込まれたガラス基板５４を露出させる。ガラスとシリコンの除去はどちらを先に行っても構わない。 Specifically, the second main surface of the glass substrate 54 (such as grinding using a diamond grindstone, polishing such as chemical mechanical polishing (CMP), or dry etching such as RIE or wet etching using HF is used. The upper surface in FIG. 4 is uniformly scraped to expose the silicon substrate body 51 on the second main surface of the glass substrate 54. Similarly, using a method such as grinding, polishing, or etching, the back surface of the silicon substrate body 51 is evenly scraped to expose the glass substrate 54 embedded in the recess 52 on the back surface of the silicon substrate body 51. Either glass or silicon may be removed first.
　以上の工程により製造されたガラス埋込シリコン基板は、図４（ｅ）に示すように、シリコン基板本体５１にガラス基板５４の一部が埋め込まれたものである。よって、図４（ｅ）のシリコン基板本体５１の部分を図２及び図３に示した配線２８に当てはめ、図４（ｅ）のガラス基板５４の部分を図２及び図３に示したガラス基板２０に当てはめる。これにより、図２及び図３に示した第１の固定基板２の形成に用いられるガラス基板２０に、図４（ｅ）に示したガラス埋込シリコン基板を適用することができる。 The glass-embedded silicon substrate manufactured by the above steps is obtained by embedding a part of the glass substrate 54 in the silicon substrate body 51 as shown in FIG. 4E is applied to the wiring 28 shown in FIGS. 2 and 3, and the glass substrate 54 shown in FIG. 4E is replaced with the glass substrate shown in FIGS. Apply to 20. As a result, the glass-embedded silicon substrate shown in FIG. 4E can be applied to the glass substrate 20 used for forming the first fixed substrate 2 shown in FIGS.
　図５（ａ）を参照して、図４（ｃ）に示した第２の工程を実施する為の具体的な製造装置の構成を説明する。図５（ａ）に示すように、この製造装置は、シリコン基板本体５１とガラス基板５４を収容可能な大きさの真空チャンバ３０５と、真空チャンバ３０５内の気体を排気するロータリーポンプなどの真空ポンプ３０６とを少なくとも備える。この製造装置は、図示は省略するが、この他、真空チャンバ３０５内の減圧された雰囲気において、シリコン基板本体５１の表面にガラス基板の第１の主面を重ね合わせて、凹部５２を密閉する手段を備える。具体的に、この製造装置は、減圧雰囲気において、シリコン基板本体５１とガラス基板５４を、陽極接合、表面活性化結合、樹脂接着などの方法により接合する手段を備える。これにより、減圧雰囲気において凹部５２を密閉することができる。 With reference to FIG. 5A, a specific configuration of the manufacturing apparatus for performing the second step shown in FIG. 4C will be described. As shown in FIG. 5A, this manufacturing apparatus includes a vacuum chamber 305 having a size capable of accommodating the silicon substrate body 51 and the glass substrate 54, and a vacuum pump such as a rotary pump that exhausts the gas in the vacuum chamber 305. 306 at least. Although not shown in the drawing, this manufacturing apparatus additionally seals the recess 52 by superimposing the first main surface of the glass substrate on the surface of the silicon substrate body 51 in a reduced-pressure atmosphere in the vacuum chamber 305. Means. Specifically, the manufacturing apparatus includes means for bonding the silicon substrate body 51 and the glass substrate 54 by a method such as anodic bonding, surface activation bonding, and resin bonding in a reduced pressure atmosphere. Thereby, the recessed part 52 can be sealed in a pressure-reduced atmosphere.
　図５（ｂ）を参照して、図４（ｄ）に示した第３の工程を実施する為の具体的な製造装置の構成を説明する。図５（ｂ）に示すように、この製造装置は、共に平板状のステージ３０８及び加熱・加圧治具３０７を備える。加熱・加圧治具３０７は、ガラス基板５４に対して熱を加えるヒータ３０９等の加熱手段を備え、ガラス基板５４に対して熱と力を同時に加えることができる。シリコン基板本体５１とガラス基板５４は、ステージ３０８と加熱・加圧治具３０７との間に重ね合わせて配置される。図５（ｂ）の装置は、大気雰囲気において動作する。 With reference to FIG. 5B, a specific configuration of the manufacturing apparatus for carrying out the third step shown in FIG. 4D will be described. As shown in FIG. 5B, this manufacturing apparatus includes a flat plate stage 308 and a heating / pressurizing jig 307. The heating / pressurizing jig 307 includes heating means such as a heater 309 for applying heat to the glass substrate 54, and can apply heat and force to the glass substrate 54 at the same time. The silicon substrate body 51 and the glass substrate 54 are disposed so as to overlap each other between the stage 308 and the heating / pressurizing jig 307. The apparatus of FIG. 5 (b) operates in an air atmosphere.
　次に、図６を参照して、図５（ａ）及び図５（ｂ）に示した製造装置を用いて行う第２の工程及び第３の工程の詳細な手順を説明する。 Next, with reference to FIG. 6, the detailed procedure of the 2nd process and the 3rd process performed using the manufacturing apparatus shown to Fig.5 (a) and FIG.5 (b) is demonstrated.
　（い）図５（ａ）の製造装置の真空チャンバ３０５の中に、シリコン基板本体５１とガラス基板５４を搬入し、真空チャンバ３０５を密閉する。そして、真空ポンプ３０６を駆動して、真空チャンバ３０５の中を排気する。この時点において、少なくとも、凹部５２を密閉されていない。即ち、シリコン基板本体５１の表面にガラス基板の第１の主面が重ね合わされていても構わないが、接合されていない。これにより、真空チャンバ３０５内を排気する時に、凹部５２の内部の気体も排気することができる。 (Ii) The silicon substrate main body 51 and the glass substrate 54 are carried into the vacuum chamber 305 of the manufacturing apparatus of FIG. 5A, and the vacuum chamber 305 is sealed. Then, the vacuum pump 306 is driven to evacuate the vacuum chamber 305. At this point, at least the recess 52 is not sealed. That is, the first main surface of the glass substrate may be superimposed on the surface of the silicon substrate body 51, but it is not joined. Thereby, when exhausting the inside of the vacuum chamber 305, the gas inside the recess 52 can also be exhausted.
　（ろ）そして、凹部５２を密閉する。例えば、真空雰囲気において、シリコン基板本体５１とガラス基板５４を重ねる（Ｓ０１）。シリコン基板本体５１とガラス基板５４の重ね合わせ面はそれぞれ、表面を平坦に加工する（表面粗さを小さくする）ことが好ましく、これにより、シリコン基板本体５１とガラス基板５４との重ね合わせ面での気密性を高くなり、凹部５２を密閉することができる。その後、真空ポンプ３０６を停止し、真空チャンバ３０５の内部を大気圧に戻し、真空チャンバ３０５の中から接合されたシリコン基板本体５１とガラス基板５４を取り出す。凹部５２は密閉されているので、凹部５２の内部は真空状態に保たれる。 (Ro) Then, the recess 52 is sealed. For example, the silicon substrate body 51 and the glass substrate 54 are stacked in a vacuum atmosphere (S01). Each of the overlapping surfaces of the silicon substrate body 51 and the glass substrate 54 is preferably processed to have a flat surface (reducing the surface roughness), whereby the overlapping surface of the silicon substrate body 51 and the glass substrate 54 is The airtightness of the concave portion 52 can be sealed. Thereafter, the vacuum pump 306 is stopped, the inside of the vacuum chamber 305 is returned to atmospheric pressure, and the bonded silicon substrate body 51 and glass substrate 54 are taken out from the vacuum chamber 305. Since the recess 52 is hermetically sealed, the inside of the recess 52 is kept in a vacuum state.
　（は）シリコン基板本体５１とガラス基板５４を、図５（ｂ）の製造装置のステージ３０８と加熱・加圧治具３０７との間に配置する。Ｓ０３段階に進み、ヒータ３０９のスイッチを入れて、ガラス基板５４を加熱する。なお、ガラス基板５４の温度をその軟化温度まで上昇させた後、ヒータ３０９のスイッチを、ガラス基板５４の温度をモニターしながら制御して軟化温度を維持する。例えば、テンパックスガラスの場合、８２０℃付近まで加熱すればよい。 (H) The silicon substrate body 51 and the glass substrate 54 are disposed between the stage 308 and the heating / pressurizing jig 307 of the manufacturing apparatus in FIG. In step S03, the heater 309 is turned on to heat the glass substrate 54. In addition, after raising the temperature of the glass substrate 54 to the softening temperature, the switch of the heater 309 is controlled while monitoring the temperature of the glass substrate 54 to maintain the softening temperature. For example, in the case of Tempax glass, it may be heated to around 820 ° C.
　（に）Ｓ０５段階において、加熱・加圧治具３０７を用いて、ガラス基板５４とシリコン基板本体５１をプレスする。この時、凹部５２の内部の気圧が外部の気圧に比べて低いので、この圧力差によりガラスは凹部５２の内部に吸引される。また、Ｓ０３段階の加熱処理、そして、Ｓ０５段階のプレス処理によって、軟化したガラス基板５４の一部は、シリコン基板本体５１の凹部５２に埋め込まれる（第３の工程）。 (Ii) In step S05, the glass substrate 54 and the silicon substrate body 51 are pressed using a heating / pressurizing jig 307. At this time, since the pressure inside the recess 52 is lower than the outside pressure, the glass is sucked into the recess 52 by this pressure difference. Further, a part of the glass substrate 54 softened by the heat treatment in step S03 and the press treatment in step S05 is embedded in the recess 52 of the silicon substrate body 51 (third step).
　（ほ）Ｓ０７段階において、凹部５２の中が軟化したガラス基板５４によって充填された場合、プレスを停止し、Ｓ０９段階に進み、ヒータ３０９のスイッチを切り、所定の冷却手段を用いて、ガラス基板５４を冷却する。 (E) In step S07, when the concave portion 52 is filled with the softened glass substrate 54, the press is stopped, the process proceeds to step S09, the heater 309 is turned off, and a predetermined cooling means is used. Cool 54.
　このように、図５（ａ）及び図５（ｂ）に示した製造装置を用いて、第２の工程及び第３の工程を実施する。図４における第２の工程は、図６におけるＳ０１段階に相当し、図４における第３の工程は、図６におけるＳ０３～Ｓ０７段階に相当する。 Thus, the second step and the third step are performed using the manufacturing apparatus shown in FIGS. 5 (a) and 5 (b). The second step in FIG. 4 corresponds to step S01 in FIG. 6, and the third step in FIG. 4 corresponds to steps S03 to S07 in FIG.
　なお、軟化したガラス基板５４の一部をシリコン基板本体５１の凹部５２に埋め込むために、凹部５２の内部と外部との圧力差、及びガラスの自重による力で十分である場合、図６のＳ０５段階のプレス処理を行わなくてもよい。例えば、ガラス基板５４の温度を高くすることにより、ガラス基板５４の粘性が低下する。この場合、プレス処理を省略しても、凹部５２の内外の圧力差及びガラスの自重により凹部５２に軟化したガラス基板５４の一部を埋め込むことができる。なお、ガラス基板５４とシリコン基板本体５１の配置を入れ替えた場合、ガラスの自重の代りに、シリコン基板本体５１の自重となる。 Note that in order to embed a part of the softened glass substrate 54 in the recess 52 of the silicon substrate body 51, when the pressure difference between the inside and the outside of the recess 52 and the force due to the weight of the glass are sufficient, S05 in FIG. It is not necessary to perform the step press process. For example, by increasing the temperature of the glass substrate 54, the viscosity of the glass substrate 54 decreases. In this case, even if the pressing process is omitted, it is possible to embed a part of the glass substrate 54 softened in the recess 52 due to the pressure difference inside and outside the recess 52 and the weight of the glass. In addition, when arrangement | positioning of the glass substrate 54 and the silicon substrate main body 51 is replaced, it becomes the dead weight of the silicon substrate main body 51 instead of the dead weight of glass.
　以上説明したように、本発明の第１の実施の形態によれば、以下の作用効果が得られる。 As described above, according to the first embodiment of the present invention, the following operational effects can be obtained.
　凹部５２を密閉する第２の工程を実施する時の気圧を、凹部５２にガラスを埋め込む第３の工程を実施する時の気圧よりも低くする。これにより、ガラスを凹部５２に埋め込む際に、凹部５２の内部の気圧が外部の気圧に比べて低くなるので、この圧力差によりガラスは凹部５２の内部に吸引される。よって、迅速にガラスを埋め込むことができ、且つボイドを抑制することができる。 The atmospheric pressure when performing the second step of sealing the concave portion 52 is set lower than the atmospheric pressure when performing the third step of embedding glass in the concave portion 52. As a result, when the glass is embedded in the recess 52, the pressure inside the recess 52 becomes lower than the outside pressure, so that the glass is sucked into the recess 52 due to this pressure difference. Therefore, the glass can be embedded quickly and voids can be suppressed.
　例えば図５（ａ）に示した製造装置を用いることにより、第２の工程を真空中において実施し、例えば図５（ｂ）に示した製造装置を用いることにより、第３の工程を大気圧中で実施する。ガラスを凹部５２に埋め込む際に、外部の気圧は大気圧であるが、凹部５２の内部の気圧は真空に保たれるので、この圧力差によりガラスは凹部５２の内部に吸引される。よって、迅速にガラスを埋め込むことができ、且つボイドを抑制することができる。 For example, by using the manufacturing apparatus shown in FIG. 5A, the second process is performed in a vacuum, and for example, by using the manufacturing apparatus shown in FIG. 5B, the third process is performed at atmospheric pressure. Conduct in. When the glass is embedded in the recess 52, the external atmospheric pressure is atmospheric pressure, but the internal pressure of the recess 52 is kept in vacuum, so that the glass is sucked into the recess 52 by this pressure difference. Therefore, the glass can be embedded quickly and voids can be suppressed.
　以上の実施形態では、前記第２の工程において、第１主面及び第１主面に対向する第２主面が平坦なガラス基板を用いた例により説明したが、本発明はこれに限定されるものではなく、シリコン基板の凹部に対向する位置に肉厚部を有するガラス基板を準備し、凹部に肉厚部を対向させて凹部を密閉するようにしてもよい。
　このようにすると、より効果的に凹部にガラスを埋め込むことができる。
　この肉厚部は、後述の実施形態に示すように、第１主面又は第２主面に形成された凸部により構成することができるし、第１主面及び第２主面の両主面に凸部を形成することにより構成してもよい。 In the above embodiment, in the second step, the first main surface and the second main surface opposite to the first main surface are described as examples using a flat glass substrate. However, the present invention is not limited to this. Instead of this, a glass substrate having a thick portion at a position facing the concave portion of the silicon substrate may be prepared, and the thick portion may be opposed to the concave portion to seal the concave portion.
If it does in this way, glass can be embedded more effectively in a crevice.
As shown in the embodiments described later, this thick portion can be constituted by a convex portion formed on the first main surface or the second main surface, or both main surfaces of the first main surface and the second main surface. You may comprise by forming a convex part in a surface.
（第２の実施の形態）
　図７（ｃ）に示すように、第２の工程を実施する時に、凹部２０２に入り込む第１の凸部２１０が、ガラス基板２０４の第１の主面、すなわちシリコン基板本体２０１に重なり合う面に形成されていても構わない。これにより、ガラス基板２０４の一部を凹部２０２に埋め込む際に、凹部２０２の内部にガラスが既に存在するため、凹部２０２にボイドがより発生しにくくなり、より速くガラスを埋め込むことができる。 (Second Embodiment)
As shown in FIG. 7C, when the second step is performed, the first convex portion 210 that enters the concave portion 202 is formed on the first main surface of the glass substrate 204, that is, the surface overlapping the silicon substrate body 201. It may be formed. Accordingly, when a part of the glass substrate 204 is embedded in the recess 202, glass already exists in the recess 202, so that voids are less likely to occur in the recess 202, and the glass can be embedded faster.
　図７を参照して、本発明の第２の実施の形態に係わるガラス埋込シリコン基板の製造方法を説明する。 Referring to FIG. 7, a method for manufacturing a glass-embedded silicon substrate according to the second embodiment of the present invention will be described.
　（イ）図７（ａ）及び図７（ｂ）に示す工程は、図４（ａ）及び図４（ｂ）に示した工程と同じであり、説明を省略する。 (A) The steps shown in FIGS. 7A and 7B are the same as the steps shown in FIGS. 4A and 4B, and description thereof is omitted.
　（ロ）次に、減圧雰囲気において、図７（ｃ）に示すように、シリコン基板本体２０１の表面にガラス基板２０４の第１の主面（図７における下面）を重ね合わせて、凹部２０２を密閉する（第２の工程）。なお、ガラス基板２０４の第１の主面、すなわちシリコン基板本体２０１に重なり合う面には、予め、ブラスト加工やレーザー加工などにより、第１の凸部２１０が形成されている。第２の工程において、第１の凸部２１０は、凹部２０２の中に入り込む。 (B) Next, in a reduced-pressure atmosphere, as shown in FIG. 7C, the first main surface (the lower surface in FIG. 7) of the glass substrate 204 is overlaid on the surface of the silicon substrate body 201 to form the recess 202. Seal (second step). In addition, the 1st convex part 210 is formed in the 1st main surface of the glass substrate 204, ie, the surface which overlaps with the silicon substrate main body 201, by blast processing, laser processing, etc. previously. In the second step, the first convex portion 210 enters the concave portion 202.
　（ハ）図７（ｄ）に示すように、軟化したガラス基板２０４の一部（第１の凸部２１０を含む）をシリコン基板本体２０１の凹部２０２に埋め込む（第３の工程）。第２の工程及び第３の工程の詳細な手順は、図６を参照して説明したとおりである。 (C) As shown in FIG. 7D, a part of the softened glass substrate 204 (including the first convex portion 210) is embedded in the concave portion 202 of the silicon substrate body 201 (third step). Detailed procedures of the second step and the third step are as described with reference to FIG.
　（ニ）ガラス基板２０４を冷却して、再固化させる（第４の工程）。その後に行う図７（ｅ）に示す工程は、図４（ｅ）示した工程と同じであり説明を省略する。 (D) The glass substrate 204 is cooled and re-solidified (fourth step). The subsequent process shown in FIG. 7E is the same as the process shown in FIG.
　以上説明したように、第２の工程を実施する時に、凹部２０２に入り込む第１の凸部２１０が、ガラス基板２０４の第１の主面に形成されている。これにより、ガラス基板２０４の一部を凹部２０２に埋め込む際に、凹部２０２の内部にガラスが既に存在するため、凹部２０２にボイドがより発生しにくくなり、より速くガラスを埋め込むことができる。 As described above, the first convex portion 210 that enters the concave portion 202 when the second step is performed is formed on the first main surface of the glass substrate 204. Accordingly, when a part of the glass substrate 204 is embedded in the recess 202, glass already exists in the recess 202, so that voids are less likely to occur in the recess 202, and the glass can be embedded faster.
（第３の実施の形態）
　図８（ｃ）に示すように、第３の工程を実施する時に、第２の凸部３１０が、ガラス基板３０４の第２の主面、すなわちシリコン基板本体３０１に重なり合う面に対向する面に形成されていても構わない。 (Third embodiment)
As shown in FIG. 8C, when the third step is performed, the second convex portion 310 is formed on the second main surface of the glass substrate 304, that is, the surface facing the surface overlapping the silicon substrate body 301. It may be formed.
　図８を参照して、本発明の第３の実施の形態に係わるガラス埋込シリコン基板の製造方法を説明する。 Referring to FIG. 8, a method for manufacturing a glass-embedded silicon substrate according to the third embodiment of the present invention will be described.
　（イ）図８（ａ）及び図８（ｂ）に示す工程は、図４（ａ）及び図４（ｂ）に示した工程と同じであり、説明を省略する。 (A) The steps shown in FIGS. 8A and 8B are the same as the steps shown in FIGS. 4A and 4B, and a description thereof will be omitted.
　（ロ）次に、減圧雰囲気において、図８（ｃ）に示すように、シリコン基板本体３０１の表面にガラス基板３０４の第１の主面（図８における下面）を重ね合わせて、凹部３０２を密閉する（第２の工程）。なお、ガラス基板３０４の第２の主面、すなわちシリコン基板本体３０１に重なり合う面に対向する面には、予め、ブラスト加工やレーザー加工などにより、第２の凸部３１０が形成されている。第２の凸部３１０は、ガラス基板３０４の第１の主面の法線方向から見て、凹部３０２と同じ位置に形成されている。 (B) Next, in a reduced pressure atmosphere, as shown in FIG. 8C, the first main surface (the lower surface in FIG. 8) of the glass substrate 304 is overlaid on the surface of the silicon substrate body 301 to form the recess 302. Seal (second step). A second convex portion 310 is formed in advance on the second main surface of the glass substrate 304, that is, the surface facing the surface overlapping the silicon substrate body 301 by blasting or laser processing. The second convex portion 310 is formed at the same position as the concave portion 302 when viewed from the normal direction of the first main surface of the glass substrate 304.
　（ハ）図８（ｄ）に示すように、軟化したガラス基板３０４の一部をシリコン基板本体３０１の凹部３０２に埋め込む（第３の工程）。第２の工程及び第３の工程の詳細な手順は、図６を参照して説明したとおりである。なお、加熱・加圧治具３０７がガラス基板３０４を押す力は、第２の凸部３１０に集中する為、第２の凸部３１０の下に位置する凹部３０２にガラスが押し込まれる。 (C) As shown in FIG. 8D, a part of the softened glass substrate 304 is embedded in the recess 302 of the silicon substrate body 301 (third step). Detailed procedures of the second step and the third step are as described with reference to FIG. The force with which the heating / pressurizing jig 307 pushes the glass substrate 304 is concentrated on the second convex portion 310, so that the glass is pushed into the concave portion 302 located below the second convex portion 310.
　（ニ）ガラス基板３０４を冷却して、再固化させる（第４の工程）。その後に行う図８（ｅ）に示す工程は、図４（ｅ）示した工程と同じであり説明を省略する。 (D) The glass substrate 304 is cooled and re-solidified (fourth step). The subsequent process shown in FIG. 8E is the same as the process shown in FIG.
　以上説明したように、ガラス基板３０４の一部を凹部３０２に埋め込む際に、ガラス基板３０４の第１の主面の法線方向から見て、凹部３０２と同じ位置に第２の凸部３１０が存在する。これにより、加熱・加圧治具３０７がガラス基板３０４を押す力は、第２の凸部３１０に集中するため、凹部３０２にボイドがより発生しにくくなり、より速くガラスを埋め込むことができる。 As described above, when part of the glass substrate 304 is embedded in the recess 302, the second protrusion 310 is located at the same position as the recess 302 when viewed from the normal direction of the first main surface of the glass substrate 304. Exists. Accordingly, the force by which the heating / pressurizing jig 307 pushes the glass substrate 304 is concentrated on the second convex portion 310, so that voids are less likely to be generated in the concave portion 302, and the glass can be embedded more quickly.
（第４の実施の形態）
　図９（ｂ）に示すように、シリコン基板本体４０１の凹部４０２の少なくとも一部に、順方向のテーパ形状を設けてもよい。これにより、より効率よくガラスを埋め込むことができる。 (Fourth embodiment)
As shown in FIG. 9B, a forward tapered shape may be provided in at least a part of the recess 402 of the silicon substrate body 401. Thereby, glass can be embedded more efficiently.
　図９を参照して、本発明の第４の実施の形態に係わるガラス埋込シリコン基板の製造方法を説明する。 Referring to FIG. 9, a method for manufacturing a glass-embedded silicon substrate according to the fourth embodiment of the present invention will be described.
　（イ）図９（ａ）に示す工程は、図４（ａ）に示した工程と同じであり、説明を省略する。図９（ｂ）に示すように、例えば、結晶異方性を有するウェットエッチングによりシリコン基板本体４０１の表面の所定領域を選択的に除去して、シリコン基板本体４０１の表面に凹部４０２を形成する（第１の工程）。シリコン基板本体４０１の凹部４０２は順方向のテーパ形状を備える。すなわち、シリコン基板本体４０１の主面に平行な凹部４０２の断面積は、凹部４０２の底面からシリコン基板本体４０１の主面に向かって大きくなっている。 (A) The process shown in FIG. 9A is the same as the process shown in FIG. As shown in FIG. 9B, for example, a predetermined region on the surface of the silicon substrate body 401 is selectively removed by wet etching having crystal anisotropy to form a recess 402 on the surface of the silicon substrate body 401. (First step). The concave portion 402 of the silicon substrate body 401 has a forward tapered shape. That is, the cross-sectional area of the recess 402 parallel to the main surface of the silicon substrate body 401 increases from the bottom surface of the recess 402 toward the main surface of the silicon substrate body 401.
　（ロ）その後に行う図９（ｃ）～図９（ｅ）に示す工程は、図４（ｃ）～図４（ｅ）に示した工程と同じであり説明を省略する。 (B) The subsequent steps shown in FIGS. 9C to 9E are the same as the steps shown in FIGS. 4C to 4E, and the description thereof is omitted.
　以上説明したように、凹部４０２に順方向のテーパ形状を設けることができるので、より効率よくガラスを埋め込むことができる。よって、凹部４０２にボイドがより発生しにくくなり、より速くガラスを埋め込むことができる。 As described above, since the concave portion 402 can be provided with a forward tapered shape, glass can be embedded more efficiently. Therefore, voids are less likely to occur in the recess 402, and the glass can be embedded more quickly.
　なお、凹部４０２に設ける順方向のテーパ形状は、凹部４０２の少なくとも一部に形成されていればよい。少なくとも一部に形成されていれば、ボイド抑制及び高い処理速度という効果が得られる。 Note that the forward tapered shape provided in the recess 402 may be formed in at least a part of the recess 402. If it is formed at least partially, the effects of void suppression and high processing speed can be obtained.
　上記のように、本発明は、４つの実施の形態によって記載したが、この開示の一部をなす論述及び図面はこの発明を限定するものであると理解すべきではない。この開示から当業者には様々な代替実施の形態、実施例及び運用技術が明らかとなろう。 As described above, the present invention has been described by using the four embodiments. However, it should not be understood that the descriptions and drawings constituting a part of this disclosure limit the present invention. From this disclosure, various alternative embodiments, examples and operational techniques will be apparent to those skilled in the art.
　ガラスを凹部５２に埋め込む際に、凹部５２の内部と外部に圧力差を設けるために、減圧雰囲気において凹部５２を密閉し（第２の工程）、大気圧雰囲気において凹部５２にガラスを埋め込んだ（第３の工程）。しかし、本発明は、これに限定されない。例えば、大気圧雰囲気において凹部５２を密閉し、加圧雰囲気において凹部５２にガラスを埋め込んでもよい。これによっても、ガラスを凹部５２に埋め込む際に、凹部５２の内部の気圧を外部に気圧よりも小さくすることができる。 In order to provide a pressure difference between the inside and the outside of the recess 52 when the glass is embedded in the recess 52, the recess 52 is sealed in a reduced pressure atmosphere (second step), and the glass is embedded in the recess 52 in an atmospheric pressure atmosphere ( (3rd process). However, the present invention is not limited to this. For example, the recess 52 may be sealed in an atmospheric pressure atmosphere, and glass may be embedded in the recess 52 in a pressurized atmosphere. Also by this, when the glass is embedded in the recess 52, the pressure inside the recess 52 can be made smaller than the pressure outside.
　また、シリコン基板本体の主面に凹部を形成する工程では、単結晶シリコンから成るシリコン基板本体の一部を加工して、単結晶シリコンから成る凹部を形成していた。しかし、これに限定されることない。例えば、シリコン基板本体の主面に凹部を形成する工程は、単結晶シリコンから成るシリコン基板本体の主面に、多結晶シリコンから成るシリコン膜を堆積し、シリコン膜の一部を除去して凹部を形成してもよい。 Also, in the step of forming the recess on the main surface of the silicon substrate body, a part of the silicon substrate body made of single crystal silicon is processed to form the recess made of single crystal silicon. However, it is not limited to this. For example, the step of forming a recess in the main surface of the silicon substrate body is performed by depositing a silicon film made of polycrystalline silicon on the main surface of the silicon substrate body made of single crystal silicon, and removing a portion of the silicon film to form the recess May be formed.
　さらに、第２の実施の形態のシリコン基板２０１の凹部２０２の少なくとも一部及び第３の実施の形態のシリコン基板３０１の凹部３０２の少なくとも一部を、第４の実施の形態と同様、順方向のテーパ形状としてもよく、これにより、より効率よくガラスを埋め込むことができる。 Further, as in the fourth embodiment, at least a part of the recess 202 of the silicon substrate 201 of the second embodiment and at least a part of the recess 302 of the silicon substrate 301 of the third embodiment are forward-oriented. It is good also as a taper shape of this, Thereby, glass can be embedded more efficiently.
　このように、本発明はここでは記載していない様々な実施の形態等を包含するということを理解すべきである。したがって、本発明はこの開示から妥当な特許請求の範囲に係る発明特定事項によってのみ限定されるものである。 Thus, it should be understood that the present invention includes various embodiments not described herein. Therefore, the present invention is limited only by the invention specifying matters according to the scope of claims reasonable from this disclosure.

Claims (5)

  1. 　シリコン基板本体の主面に凹部を形成する第１の工程と、
    　前記凹部に対向する位置に肉厚部を有するガラス基板を準備し、シリコン基板本体の主面にガラス基板の第１の主面を重ね合わせて、凹部を密閉する第２の工程と、
    　前記ガラス基板に熱を加えて軟化させて、当該ガラス基板の一部を前記シリコン基板本体の凹部に埋め込む第３の工程と、
    　前記ガラス基板を冷却する第４の工程と、
    　前記ガラス基板のうち、前記シリコン基板本体の凹部に埋め込まれた部分を残し、他の部分を除去する第５の工程と、を備え、
    　前記第２の工程を実施する時の気圧を、前記第３の工程を実施する時の気圧よりも低くする
    　ことを特徴とするガラス埋込シリコン基板の製造方法。     A first step of forming a recess in the main surface of the silicon substrate body;
    A second step of preparing a glass substrate having a thick portion at a position facing the recess, overlaying the first main surface of the glass substrate on the main surface of the silicon substrate body, and sealing the recess;
    A third step of softening the glass substrate by applying heat to embed a part of the glass substrate in a recess of the silicon substrate body;
    A fourth step of cooling the glass substrate;
    A fifth step of leaving the portion embedded in the concave portion of the silicon substrate body, and removing the other portion of the glass substrate, and
    A method for producing a glass-embedded silicon substrate, wherein the atmospheric pressure when the second step is performed is lower than the atmospheric pressure when the third step is performed.
  2. 　前記第２の工程を真空中において実施し、前記第３の工程を大気圧中で実施することを特徴とする請求項１に記載のガラス埋込シリコン基板の製造方法。 The method for producing a glass-embedded silicon substrate according to claim 1, wherein the second step is performed in a vacuum and the third step is performed in an atmospheric pressure.
  3. 　前記肉厚部は、前記凹部に入り込む第１の凸部が、前記ガラス基板の第１の主面に形成されてなることを特徴とする請求項１又は２に記載のガラス埋込シリコン基板の製造方法。 3. The glass-embedded silicon substrate according to claim 1, wherein the thick portion is formed with a first convex portion entering the concave portion on a first main surface of the glass substrate. Production method.
  4. 　前記肉厚部は、第２の凸部が前記ガラス基板の第２の主面に形成されてなることを特徴とする請求項１又は２に記載のガラス埋込シリコン基板の製造方法。 3. The method for manufacturing a glass-embedded silicon substrate according to claim 1, wherein the thick portion is formed by forming a second convex portion on a second main surface of the glass substrate.
  5. 　シリコン基板本体の主面に平行な前記凹部の断面積の少なくとも一部は、当該凹部の底面から当該シリコン基板本体の主面に向かって大きくなっていることを特徴とする請求項１～４のいずれか一項に記載のガラス埋込シリコン基板の製造方法。 The at least part of the cross-sectional area of the recess parallel to the main surface of the silicon substrate body is increased from the bottom surface of the recess toward the main surface of the silicon substrate body. The manufacturing method of the glass embedded silicon substrate as described in any one of Claims.
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WO2012102252A1 (en) * 2011-01-27 2012-08-02 パナソニック株式会社 Substrate with though electrode and method for producing same
US9429589B2 (en) 2012-03-02 2016-08-30 Seiko Epson Corporation Physical quantity sensor and electronic apparatus

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