WO2011111541A1 - Memsセンサ - Google Patents
Memsセンサ Download PDFInfo
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- WO2011111541A1 WO2011111541A1 PCT/JP2011/054115 JP2011054115W WO2011111541A1 WO 2011111541 A1 WO2011111541 A1 WO 2011111541A1 JP 2011054115 W JP2011054115 W JP 2011054115W WO 2011111541 A1 WO2011111541 A1 WO 2011111541A1
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- WIPO (PCT)
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- mems sensor
- insulating layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00269—Bonding of solid lids or wafers to the substrate
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0118—Bonding a wafer on the substrate, i.e. where the cap consists of another wafer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0172—Seals
- B81C2203/019—Seals characterised by the material or arrangement of seals between parts
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/03—Bonding two components
- B81C2203/033—Thermal bonding
- B81C2203/035—Soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- This invention relates to the MEMS sensor with which the 1st base material and the 2nd base material were joined via the sealing joining part.
- FIG. 5 is a partial longitudinal sectional view of a MEMS sensor for explaining the structure of a comparative example for the present invention.
- the first base material 2, the second base material 3, and the support base material 4 are laminated in this order, and a sealing joint is formed between the first base material 2 and the second base material 3. 5 is joined. Further, the second base material 3 and the support base material 4 are joined via an insulating layer (silicon oxide layer) 6.
- Each of the base materials 2 to 4 is made of silicon or the like.
- the sealing joint 5 includes an Al layer 8 formed on the first substrate 2 side and a Ge layer 9 formed on the second substrate 3 side at a predetermined heat treatment temperature and temperature. It is formed by eutectic bonding by reduction. As shown in FIG. 5, a Ti layer 7 is formed on the lower surface of the Al layer 8 as a base for improving adhesion to the first base material 2 side.
- voids are formed inside the Al layer 8 by the eutectic bonding process. This is considered to have occurred when diffusion occurred between the Ti layer 7 and the Al layer 8 due to the heat treatment in the eutectic bonding step and the Al layer 8 was recrystallized.
- the formation of voids in the Al layer 8 weakens the bonding strength at the interface between the Al layer 8 and the Ge layer 9, and excellent sealing and airtightness cannot be obtained.
- the present invention solves the above-described conventional problems, and in particular, provides a MEMS sensor capable of improving the bonding strength and sealing hermeticity at the Al—Ge eutectic bonding interface of the sealing joint.
- the purpose is that.
- the MEMS sensor in the present invention is The 1st base material, the 2nd base material, the 1st connecting metal layer and the 2nd base material which were located between the 1st base material and the 2nd base material, and were formed in the 1st base material side
- the sealing joint is formed from the first connecting metal layer formed of Ti layer, Ta layer, Al or Al alloy, and Ge from the first base material side to the second base material side. Further, the second connection metal layers are laminated in this order.
- the Ta layer between the Ti layer and the first connection metal layer formed of Al or Al alloy, the first connection metal layer and the second connection metal layer formed of Ge Even if a predetermined heat treatment is performed to form eutectic bonding, it is possible to suppress the diffusion of Al and Ti as in the comparative example. Therefore, formation of voids (voids) in the first connection metal layer can be suppressed, and the bonding strength and sealing hermeticity at the eutectic bonding interface between the first connection metal layer and the second connection metal layer can be reduced. Can be improved.
- an insulating layer is formed on the surface of the first base material facing the second base material, and a wiring layer is embedded in the insulating layer,
- the sealing joint portion is preferably formed between the insulating layer and the second base material.
- the wiring layer is drawn out to the outside of the sealing joint, and an electrode pad electrically connected to the wiring layer is provided at a position outside the sealing joint. It is preferable.
- the second base material includes an anchor portion, a movable portion supported by the anchor portion so as to be displaceable in a height direction, and a frame body portion formed around the anchor portion and the movable portion.
- a support substrate fixed to the anchor portion and the frame body portion is provided on the opposite side of the second base material facing the first base material,
- the sealed joint portion is formed between the frame body portion and the first base material, and a joint portion having the same laminated structure as the sealed joint portion is provided between the anchor portion and the first base material. Is preferred. As a result, the bonding strength at the eutectic bonding interface of the bonding portion provided between the anchor portion and the first base material can be increased.
- an insulating layer is formed on the surface of the first base material facing the second base material, and a wiring layer is embedded in the insulating layer.
- the sealing joint portion is formed between the insulating layer and the second base material, and the wiring layer is a fixed portion provided at a position facing the movable portion inside the sealing joint portion.
- the present invention can be applied to a structure that is electrically connected to the electrode layer.
- the MEMS sensor of the present invention it is possible to improve the bonding strength and sealing hermeticity at the eutectic bonding interface between the first connection metal layer made of Al or Al alloy and the second connection metal layer made of Ge. it can.
- the schematic diagram (longitudinal sectional view) of the MEMS sensor of the first embodiment of the present invention An enlarged vertical cross-sectional view of a sealing joint in the present embodiment
- Schematic diagram (longitudinal sectional view) of the MEMS sensor of the second embodiment of the present invention (A) is a cross-sectional SIM photograph of the sealing joint of this example
- (b) is a cross-sectional SIM photograph of the sealing joint of the comparative example
- the fragmentary longitudinal cross-section of the MEMS sensor for demonstrating the structure of the comparative example with respect to this invention.
- FIG. 1 is a schematic diagram (longitudinal sectional view) of a MEMS sensor according to a first embodiment of the present invention
- FIG. 2 is an enlarged longitudinal sectional view of a sealing joint in the present embodiment
- FIG. 3 is a second embodiment of the present invention. It is a schematic diagram (longitudinal sectional view) of the MEMS sensor.
- the MEMS sensor 20 includes a first base material 21 and a second base material 22. Both the first base material 21 and the second base material 22 are made of silicon.
- the insulating base layer 29 is formed on the entire surface of the first base material 21 (the surface facing the second base material 22) 21a. As shown in FIG. 1, the first wiring layer 24 and the second wiring layer 25 are formed on the insulating base layer 29. Further, an insulating layer 23 is formed on the first wiring layer 24 and the second wiring layer 25. As described above, the wiring layers 24 and 25 are embedded in the insulating layer 23.
- the material of the insulating base layer 29 and the insulating layer 23 is not particularly limited, but is formed of, for example, a SiO 2 layer.
- the material of each wiring layer 24, 25 is not particularly limited, but is formed of, for example, AlCu.
- a protrusion 23 c is formed on the surface 23 b of the insulating layer 23 to form a stopper for the movable portion 38 described later, but the shape of the surface 23 b of the insulating layer 23 is not particularly limited.
- the protrusion 23c may be formed integrally with the insulating layer 23 or may be formed separately.
- the second base material 22 is fixedly supported on a support substrate 36 via an oxide insulating layer (ceremonial layer) 35 on the opposite surface side of the first base material 21.
- An SOI (Silicon on Insulator) substrate can be configured by the second base material 22, the oxide insulating layer 35, and the support substrate 36.
- the support substrate 36 is made of silicon.
- the second base material 22 includes an anchor portion 37, a movable portion 38, a spring portion 39, and a frame body portion 40. Each part can be configured by etching the second base material 22.
- the movable part 38 is supported by the anchor part 37 via a spring part 39 so as to be displaceable in the height direction (Z).
- the movable part 38 and the frame part 40 are separated.
- the planar shape (the shape of the XY plane) of the frame body portion 40 is formed in a frame shape surrounding the periphery of the movable portion 38.
- FIG. 1 shows a cross section of the frame body portion 40 that appears on both sides of the movable portion 38 when the MEMS sensor 20 is cut from the height direction.
- the structure and shape of each part of the 2nd base material 22 are not limited to what is shown in FIG.
- the oxide insulating layer 35 is not formed between the movable portion 38 and the spring portion 39 and the support substrate 36. Therefore, the movable portion 38 can be displaced in the height direction (Z).
- the oxide insulating layer 35 is preferably formed of SiO 2 .
- a sealing joint portion 50 formed by laminating a plurality of metal layers is formed between the insulating layer 23 formed on the surface 21 a of the first base material 21 and the frame body portion 40. Yes.
- the upper surface of the sealing joint portion 50 is in contact with the frame body portion 40.
- the lower surface of the sealing joint 50 is in contact with the surface 23b of the insulating layer 23 and is insulated from the wiring layer embedded in the insulating layer 23.
- a joint portion 51 having the same stacked structure as that of the sealing joint portion 50 is also formed between the insulating layer 23 and the anchor portion 37.
- the upper surface of the joint portion 51 is in contact with the anchor portion 37 and the lower surface is electrically connected to the second wiring layer 25.
- the protrusion portion and the frame body portion are not provided.
- the sealing joint 50 is formed.
- the protrusion is made of, for example, silicon nitride.
- the protruding portion is used for adjusting a gap between the movable portion 38 and the fixed electrode layer 26 (described later).
- the first wiring layer 24 is drawn from the inner side of the sealing joint portion 50 (the inner side surrounded by the frame body portion 40) to the outside by intersecting the sealing joint portion 50 in a plan view. ing.
- the electrode pad 27 is formed outside the sealing joint 50.
- a through hole 23a is formed in the insulating layer 23 at the position of the outer end of the first wiring layer 24 for output signals, and the first wiring layer 24 and the electrode pad 27 are electrically connected through the through hole 23a. It is connected.
- the fixed electrode layer 26 is formed on the surface of the insulating layer 23 facing the movable portion 38 in the height direction.
- the inner end portion of the first wiring layer 24 is electrically connected to the fixed electrode layer 26 through a through hole 23 a formed in the insulating layer 23.
- the material of the fixed electrode layer 26 and the electrode pad 27 shown in FIG. 1 is not particularly limited, but a material excellent in conductivity is preferably applied.
- the anchor portion 37 is electrically connected to the second wiring layer 25 for input signals through the joint portion 51.
- the second wiring layer 25 is also drawn out of the sealing joint portion 50 and connected to an electrode pad (not shown) similarly to the first wiring layer 24.
- a predetermined gap is provided in the height direction between the movable portion 38 and the fixed electrode layer 26.
- the distance between the fixed electrode layer 26 and the capacitance changes, and the capacitance changes.
- the sealing joint portion 50 includes a Ti layer 52, a Ta layer 53, a first connection metal layer 54 made of Al or an Al alloy, and a second connection metal layer 55 made of Ge from the bottom. They are stacked in order.
- the Al alloy include an aluminum copper alloy (AlCu) and an aluminum scandium copper alloy (AlScCu).
- the Ti layer 52 which is the lowermost layer of the sealing joint 50, is formed in contact with and in close contact with the surface 23 b of the insulating layer 23.
- the second connection metal layer 55 that is the uppermost layer of the sealing joint portion 50 is formed in contact with the lower surface of the frame body portion 40.
- the configuration of the lower surface side and the upper surface side of the sealing joint portion 50 is not limited to that shown in FIG. 1, and the surface in contact with the Ti layer 52 that is the lowermost layer of the sealing joint portion 50 according to the configuration of the MEMS sensor
- the surface in contact with the second connection metal layer 55 that is the uppermost layer of the sealing joint portion 50 is appropriately changed.
- the three layers of the Ti layer 52, the Ta layer 53, and the first connection metal layer 54 shown in FIG. 2 are initially formed on the first base material 21 side by an existing method such as sputtering.
- the connection metal layer 55 is initially formed on the second base material 22 side by an existing method such as sputtering.
- connection metal layer 54 and the second connection metal layer 55 are brought into contact with each other and subjected to a predetermined heat treatment while applying a predetermined pressure, so that the first connection metal layer 54 made of Al or an Al alloy and Ge
- the second connection metal layers 55 are eutectic bonded.
- eutectic bonding can be performed by heat treatment at a temperature lower than the melting point of each metal by a combination of materials of the first connection metal layer 54 and the second connection metal layer 55.
- the first connection metal layer 54 made of Al or Al alloy is formed directly on the underlying Ti layer 52 (comparative example)
- the heat treatment at the time of eutectic bonding is performed between Ti and Al. As a result, diffusion occurred and a gap was formed in the first connecting metal layer 54.
- the Ta layer 53 is interposed between the underlying Ti layer 52 and the first connection metal layer 54 made of Al or Al alloy.
- Ta has a higher melting point than Ti and is considered to function as a diffusion barrier layer.
- the diffusion of Ti and Al can also be suppressed by heat treatment during eutectic bonding, and the formation of voids (voids) in the first connection metal layer 54 can be suppressed.
- the first connection metal layer 54 made of Al or Al alloy and the second connection metal layer 55 made of Ge can be eutectic bonded with high bonding strength.
- no voids (voids) are formed in the first connection metal layer 54, and the entire surface between the first connection metal layer 54 and the second connection metal layer 55 is in close contact with each other. It is possible to improve the property appropriately.
- the thickness of the Ti layer 52 is about 0.01 to 0.1 ⁇ m
- the thickness of the Ta layer 53 is about 0.01 to 0.1 ⁇ m
- the thickness of the second connection metal layer 55 made of Ge is about 0.3 to 1.0 ⁇ m.
- the joint portion 51 that joins between the anchor portion 37 and the second wiring layer 25 shown in FIG. 1 is also formed in the same laminated structure as the sealing joint portion 50. That is, the junction 51 is also laminated from the bottom in the order of Ti layer / Ta layer / Al or first connection metal layer made of Al alloy / second connection metal layer made of Ge. As a result, the bonding strength at the eutectic bonding interface between the first connection metal layer and the second connection metal layer in the bonding portion 51 can be appropriately improved.
- the fixed electrode layer 26 and the electrode pad 27 formed on the insulating layer 23 shown in FIG. 1 are also preferably formed by a laminated structure of Ti layer / Ta layer / Al layer or Al alloy layer. That is, at the same time when forming the three-layer structure (Ti layer / Ta layer / Al layer or Al alloy layer laminated structure) constituting the sealing joint 50 and the joint 51 on the first substrate 21 side, The manufacturing process can be facilitated by forming the fixed electrode layer 26 and the electrode pad 27 with the three-layer structure.
- FIG. 3 shows a partial longitudinal sectional view of a MEMS sensor showing an embodiment different from FIG.
- the wiring layer 64 is formed on the first base material 68 via the electrically insulating insulating base layer 63.
- an insulating layer 65 is formed on the wiring layer 64.
- the wiring layer 64 is embedded in the insulating layer 65.
- through holes 69 and 73 that lead to the wiring layer 64 are formed in the insulating layer 65.
- a frame-shaped protruding layer 66 is formed on the insulating layer 65 in plan view.
- the protruding layer 66 is made of, for example, silicon nitride.
- it has the same laminated structure as in FIG. 2 (Ti layer 52 / Ta layer 53 / Al or first connection metal layer 54 made of Al alloy / second connection metal layer 55 made of Ge).
- a second base material 67 is formed via the sealing joint portion 50. Thereby, an internal space S ⁇ b> 1 sealed between the first base material 68 and the second base material 67 is formed.
- the sensor element 70 is installed in the internal space S1, and the connection terminal portion 71 of the sensor element 70 is electrically connected to the electrical connection layer 72 (in FIG. 3). The connection state of one of the connection terminals is shown).
- FIG. 4A is a cross-sectional SIM photograph of the sealed joint portion of this example
- FIG. 4B is a cross-sectional SIM photograph of the sealed joint portion of the comparative example.
- the sealing joint portion is Ti (0.02) / Ta (0.02) / first connecting metal layer from the bottom toward the first base material side; Al (0. 8), the second connecting metal layer; Ge (0.5) was formed on the second base material side.
- the numerical value in the parenthesis indicates the film thickness and the unit is ⁇ m. Then, heat treatment was performed under the condition of 430 ° C. in a state where the first connection metal layer made of Al and the second connection metal layer made of Ge were butted together. Thus, Al—Ge eutectic bonding was performed.
- the sealing joint is laminated on the first base material in the order of Ti (0.02) / first connecting metal layer; Al (0.8) from the bottom.
- the second connecting metal layer; Ge (0.5) was formed on the second substrate side.
- the numerical value in the parenthesis indicates the film thickness and the unit is ⁇ m.
- heat treatment was performed under the condition of 430 ° C. in a state where the first connection metal layer made of Al and the second connection metal layer made of Ge were butted together.
- Al—Ge eutectic bonding was performed.
- the interface between the Al layer (first connection metal layer) and the Ge layer (second connection metal layer) adheres cleanly, and voids (voids) are formed in the Al layer. ) was not formed.
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Abstract
Description
第1基材と、第2基材と、前記第1基材と前記第2基材間に位置し、前記第1基材側に形成された第1の接続金属層と前記第2基材側に形成された第2の接続金属層とを共晶接合してなる封止接合部と、を有して構成され、
前記封止接合部は、前記第1基材側から前記第2基材側にかけて、Ti層、Ta層、AlあるいはAl合金で形成された前記第1の接続金属層、及び、Geで形成された前記第2の接続金属層の順に積層されていることを特徴とするものである。
前記封止接合部は、絶縁層と前記第2の基材間に形成されていることが好ましい。
前記枠体部と前記第1基材間に前記封止接合部が形成されており、前記封止接合部と同じ積層構造の接合部が前記アンカ部と前記第1基材間に設けられることが好ましい。これにより、アンカ部と第1基材間に設けられた接合部の共晶接合界面での接合強度を高めることができる。
前記封止接合部は、前記絶縁層と前記第2の基材間に形成されており、前記配線層は、前記封止接合部の内側にて前記可動部と対向する位置に設けられた固定電極層に電気的に接続されている構成に適用できる。
21、68 第1基材
22、67 第2基材
23,65 絶縁層
24、25、64 配線層
26 固定電極層
27 電極パッド
36 支持基板
37 アンカ部
38 可動部
40 枠体部
50 封止接合部
51 接合部
52 Ti層
53 Ta層
54 第1の接続金属層
55 第2の接続金属層
70 センサ素子
Claims (5)
- 第1基材と、第2基材と、前記第1基材と前記第2基材間に位置し、前記第1基材側に形成された第1の接続金属層と前記第2基材側に形成された第2の接続金属層とを共晶接合してなる封止接合部と、を有して構成され、
前記封止接合部は、前記第1基材側から前記第2基材側にかけて、Ti層、Ta層、AlあるいはAl合金で形成された前記第1の接続金属層、及び、Geで形成された前記第2の接続金属層の順に積層されていることを特徴とするMEMSセンサ。 - 前記第1基材の前記第2基材との対向面側に絶縁層が形成され、前記絶縁層内に配線層が埋設されており、
前記封止接合部は、前記絶縁層と前記第2の基材間に形成されている請求項1記載のMEMSセンサ。 - 前記配線層は前記封止接合部の外側にまで引き出されており、前記封止接合部の外側の位置に前記配線層と電気的に接続される電極パッドが設けられている請求項2記載のMEMSセンサ。
- 前記第2基材は、アンカ部と、前記アンカ部に高さ方向へ変位可能に支持される可動部と、前記アンカ部及び前記可動部の周囲に形成された枠体部とを有して構成され、前記第2基材の前記第1基材と対向する反対側には前記アンカ部及び前記枠体部に固定される支持基板が設けられており、
前記枠体部と前記第1基材間に前記封止接合部が形成されており、前記封止接合部と同じ積層構造の接合部が前記アンカ部と前記第1基材間に設けられる請求項1ないし3のいずれか1項に記載のMEMSセンサ。 - 前記第1基材の前記第2基材との対向面側に絶縁層が形成され、前記絶縁層内に配線層が埋設されており、
前記封止接合部は、前記絶縁層と前記第2の基材間に形成されており、前記配線層は、前記封止接合部の内側にて前記可動部と対向する位置に設けられた固定電極層に電気的に接続されている請求項4記載のMEMSセンサ。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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CN201180013009.0A CN102792168B (zh) | 2010-03-09 | 2011-02-24 | Mems传感器 |
JP2012504402A JP5627669B2 (ja) | 2010-03-09 | 2011-02-24 | Memsセンサ |
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JP2010051528 | 2010-03-09 | ||
JP2010-051528 | 2010-03-09 |
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CN (1) | CN102792168B (ja) |
WO (1) | WO2011111541A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103449354A (zh) * | 2012-04-25 | 2013-12-18 | 阿尔卑斯电气株式会社 | Mems传感器及其制造方法 |
WO2022097328A1 (ja) * | 2020-11-06 | 2022-05-12 | 株式会社村田製作所 | 共振装置及び共振装置製造方法 |
EP4353674A1 (en) * | 2022-10-11 | 2024-04-17 | Murata Manufacturing Co., Ltd. | Method for sealing a mems device and a sealed mems device |
Families Citing this family (1)
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JP6387850B2 (ja) * | 2015-02-10 | 2018-09-12 | 株式会社デンソー | 半導体装置およびその製造方法 |
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JP2006344573A (ja) * | 2005-05-13 | 2006-12-21 | Gunma Prefecture | 加速度スイッチ及び電子装置 |
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JP2010171368A (ja) * | 2008-12-25 | 2010-08-05 | Denso Corp | 半導体装置およびその製造方法 |
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US7458263B2 (en) * | 2003-10-20 | 2008-12-02 | Invensense Inc. | Method of making an X-Y axis dual-mass tuning fork gyroscope with vertically integrated electronics and wafer-scale hermetic packaging |
JP4404143B2 (ja) * | 2007-07-02 | 2010-01-27 | 株式会社デンソー | 半導体装置およびその製造方法 |
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2011
- 2011-02-24 CN CN201180013009.0A patent/CN102792168B/zh not_active Expired - Fee Related
- 2011-02-24 JP JP2012504402A patent/JP5627669B2/ja not_active Expired - Fee Related
- 2011-02-24 WO PCT/JP2011/054115 patent/WO2011111541A1/ja active Application Filing
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US7276789B1 (en) * | 1999-10-12 | 2007-10-02 | Microassembly Technologies, Inc. | Microelectromechanical systems using thermocompression bonding |
JP2002328137A (ja) * | 2001-04-27 | 2002-11-15 | Matsushita Electric Works Ltd | 加速度センサ及びその製造方法 |
JP2005249454A (ja) * | 2004-03-02 | 2005-09-15 | Mitsubishi Electric Corp | 容量型加速度センサ |
WO2006101769A2 (en) * | 2005-03-18 | 2006-09-28 | Invesense Inc. | Method of fabrication of ai/ge bonding in a wafer packaging environment and a product produced therefrom |
JP2006344573A (ja) * | 2005-05-13 | 2006-12-21 | Gunma Prefecture | 加速度スイッチ及び電子装置 |
JP2010171368A (ja) * | 2008-12-25 | 2010-08-05 | Denso Corp | 半導体装置およびその製造方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103449354A (zh) * | 2012-04-25 | 2013-12-18 | 阿尔卑斯电气株式会社 | Mems传感器及其制造方法 |
WO2022097328A1 (ja) * | 2020-11-06 | 2022-05-12 | 株式会社村田製作所 | 共振装置及び共振装置製造方法 |
JP7493709B2 (ja) | 2020-11-06 | 2024-06-03 | 株式会社村田製作所 | 共振装置及び共振装置製造方法 |
EP4353674A1 (en) * | 2022-10-11 | 2024-04-17 | Murata Manufacturing Co., Ltd. | Method for sealing a mems device and a sealed mems device |
Also Published As
Publication number | Publication date |
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CN102792168B (zh) | 2014-04-30 |
CN102792168A (zh) | 2012-11-21 |
JPWO2011111541A1 (ja) | 2013-06-27 |
JP5627669B2 (ja) | 2014-11-19 |
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