WO2011108038A1 - Dispositif électroluminescent et module de rétroéclairage l'utilisant - Google Patents

Dispositif électroluminescent et module de rétroéclairage l'utilisant Download PDF

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Publication number
WO2011108038A1
WO2011108038A1 PCT/JP2010/004819 JP2010004819W WO2011108038A1 WO 2011108038 A1 WO2011108038 A1 WO 2011108038A1 JP 2010004819 W JP2010004819 W JP 2010004819W WO 2011108038 A1 WO2011108038 A1 WO 2011108038A1
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Prior art keywords
light
light emitting
emitting element
emitting device
waveguide
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PCT/JP2010/004819
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English (en)
Japanese (ja)
Inventor
山中一彦
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パナソニック株式会社
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Publication of WO2011108038A1 publication Critical patent/WO2011108038A1/fr

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0013—Means for improving the coupling-in of light from the light source into the light guide
    • G02B6/0023—Means for improving the coupling-in of light from the light source into the light guide provided by one optical element, or plurality thereof, placed between the light guide and the light source, or around the light source
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0013—Means for improving the coupling-in of light from the light source into the light guide
    • G02B6/0023—Means for improving the coupling-in of light from the light source into the light guide provided by one optical element, or plurality thereof, placed between the light guide and the light source, or around the light source
    • G02B6/0031—Reflecting element, sheet or layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0045—Devices characterised by their operation the devices being superluminescent diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0087—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for illuminating phosphorescent or fluorescent materials, e.g. using optical arrangements specifically adapted for guiding or shaping laser beams illuminating these materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02255—Out-coupling of light using beam deflecting elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
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    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • G—PHYSICS
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    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0013—Means for improving the coupling-in of light from the light source into the light guide
    • G02B6/0023—Means for improving the coupling-in of light from the light source into the light guide provided by one optical element, or plurality thereof, placed between the light guide and the light source, or around the light source
    • G02B6/003—Lens or lenticular sheet or layer
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0033—Means for improving the coupling-out of light from the light guide
    • G02B6/0035—Means for improving the coupling-out of light from the light guide provided on the surface of the light guide or in the bulk of it
    • G02B6/0036—2-D arrangement of prisms, protrusions, indentations or roughened surfaces
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0033—Means for improving the coupling-out of light from the light guide
    • G02B6/0035—Means for improving the coupling-out of light from the light guide provided on the surface of the light guide or in the bulk of it
    • G02B6/0045—Means for improving the coupling-out of light from the light guide provided on the surface of the light guide or in the bulk of it by shaping at least a portion of the light guide
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0033—Means for improving the coupling-out of light from the light guide
    • G02B6/005—Means for improving the coupling-out of light from the light guide provided by one optical element, or plurality thereof, placed on the light output side of the light guide
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0033—Means for improving the coupling-out of light from the light guide
    • G02B6/005—Means for improving the coupling-out of light from the light guide provided by one optical element, or plurality thereof, placed on the light output side of the light guide
    • G02B6/0053—Prismatic sheet or layer; Brightness enhancement element, sheet or layer
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0066—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form characterised by the light source being coupled to the light guide
    • G02B6/0073—Light emitting diode [LED]
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0081—Mechanical or electrical aspects of the light guide and light source in the lighting device peculiar to the adaptation to planar light guides, e.g. concerning packaging
    • G02B6/0083—Details of electrical connections of light sources to drivers, circuit boards, or the like
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133615—Edge-illuminating devices, i.e. illuminating from the side
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48464—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02257—Out-coupling of light using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0651—Mode control
    • H01S5/0653—Mode suppression, e.g. specific multimode

Definitions

  • the present invention relates to a light emitting device and a backlight module using the light emitting device.
  • the liquid crystal display device uses a liquid crystal panel as a transmissive light modulation element, and irradiates the liquid crystal panel with light from a light source device disposed on the back surface thereof.
  • the liquid crystal panel irradiated with light forms an image by controlling the light transmittance.
  • a cold cathode tube (CCFL) has been used as a light source of the light source device.
  • CCFL cold cathode tube
  • a semiconductor laser element or LED Light Emitting Diode
  • Development of a light source device using a semiconductor light emitting element such as As an example of a light source device using a semiconductor laser element as a light source, for example, it is shown in the following Non-Patent Document 1, and a structure combined with an optical fiber using the high directivity of the semiconductor laser element is proposed. Yes.
  • LED light source devices which are light source devices using LEDs as light sources
  • a direct type in which a plurality of LEDs are arranged in a two-dimensional array on the entire back surface of a display screen, and a side edge of a liquid crystal panel.
  • an edge light type in which LEDs are arranged in a portion and light is emitted from the back surface of a liquid crystal panel by a light guide plate.
  • LED light source devices that use semiconductor laser elements as the light source
  • a vibrator is required to prevent speckle noise that occurs due to the high interference of the light source, and the light from the light source is evenly distributed inside the light source device. It has not been marketed yet because it is difficult to expand it.
  • LED light source devices are rapidly spreading.
  • the LED light source device is currently a direct type, but it is considered that the edge light type will be widespread with the demand for a thinner liquid crystal display device in the future.
  • the LED light source device used in the edge light type liquid crystal display device has a problem that the incident efficiency of the light emitted from the LED chip to the light guide plate is poor and the utilization efficiency of the light emitted from the LED chip is low.
  • Patent Document 1 proposes a structure in which the surface of an LED chip is covered with a scattering lens that is a cylindrical lens.
  • the light source device 224 includes a substrate 223, an LED chip 224a, and a scattering lens 224c.
  • a plurality of LED chips 224a are linearly arranged on the component mounting surface 223a of the substrate 223.
  • the scattering lens 224c which is a cylindrical lens, covers the LED chip 224a.
  • the scattering lens 224c is formed to include a curved surface 224c2 that is convex with respect to the component mounting surface 223a and a tapered surface 224c1 that is tapered from the end of the curved surface toward the component mounting surface 223a.
  • light emitted from the LED chip 224a is emitted in all directions from the surface of the LED chip 224a toward the front surface of the component mounting surface 223a, and a part of the light is refracted by the curved surface 224c2 of the scattering lens 224c. The remaining portion of the light is reflected by the tapered surface 224 c 1, further refracted by the curved surface 224 c 2, and guided to the light guide plate 221.
  • the liquid crystal display device using the conventional LED light source device has a problem that the light guide plate cannot be thinned.
  • the size of the LED chip is about 0.5 mm ⁇ 0.5 mm.
  • the emission angle of the light emitted from the LED chip is so-called Lambertian, and light having a full width at half maximum of 120 ° is emitted.
  • the size of the lens needs to be about 5 to 10 times the size of the LED chip. That is, since the size of the lens is required to be 2.5 mm to 5 mm, in order to efficiently guide light to the light guide plate, it is necessary to increase the thickness of the light guide plate to the same level as the lens. As a result, it becomes a limitation when the liquid crystal panel is thinned.
  • the light emission angle is Lambertian, that is, 120 °, and a plurality of LED chips are usually arranged at a predetermined interval. For this reason, the incidence of light in a direction parallel to the light guide plate decreases the light intensity in the region between the LED chips, which is the connection portion of the light guide plate to the light source device. As a result, there is a problem that the uniformity of the light distribution inside the light guide plate becomes insufficient.
  • the light emitting device is configured to irradiate the convex reflection surface with the emitted light emitted from the end face of the light emitting element.
  • a first light-emitting device includes a semiconductor layer stacked, an edge-emitting light-emitting element having a waveguide formed on the stacked surface, a base that holds the light-emitting element, A reflective portion having a convex reflection surface provided in the emission direction of the light emitting element on the base, wherein the convex reflection surface is partly curved and one of the tangential planes on the convex reflection surface Intersects the optical axis of the light emitted from the light emitting element at an angle of 45 °.
  • the light-emitting element is provided on the base in the emission direction of the light-emitting element, and includes a reflection portion having a convex reflection surface, and the convex reflection surface is partially curved, and the convex reflection surface. Since one of the tangent planes of the light beam intersects the optical axis of the emitted light of the light emitting element at an angle of 45 °, the aspect ratio of the emitted light (the light spread angle in the x-axis direction and the light spread in the y-axis direction) A light source having a large value (ratio to corner) can be realized.
  • the light emitted from the light emitting element can be efficiently incident on the light guide plate, and the light distribution in the light guide plate can be made uniform.
  • the optical coupling rate between the light emitting device and the light guide plate can be increased.
  • the cross-sectional shape of the light emitting end face of the waveguide may be a rectangular shape whose long side is parallel to the tangential plane of the convex reflecting surface.
  • the cross-sectional shape of the light emitting end face of the waveguide may be a rectangular shape, and the convex reflecting surface may have a flat surface in the long side direction of the cross section of the waveguide.
  • the convex reflection surface may be formed with a concave portion in which a cross section in a direction perpendicular to the optical axis of the emitted light is recessed.
  • the value of the aspect ratio of the light from the light emitting device can be further increased. It becomes.
  • the first light emitting device may further include a phosphor layer provided on the base so as to cover the light emitting element and the reflecting portion, and the phosphor layer may be arranged in parallel with the waveguide.
  • the emitted light having a large aspect ratio of the emitted light can be made white light.
  • the light emitting element may be a semiconductor laser element.
  • the light emitting element may be a super luminescent diode.
  • the waveguide has a central axis of the emitted light different from the normal of the light emitting end face by a predetermined angle, and the light emitting end face of the light emitting element and the convex reflecting surface form the predetermined angle. It may be arranged as follows.
  • the light emitting element may emit light from the front end face and the rear end face, respectively, and the reflection part having the convex reflecting surface may be disposed on the front end face side and the rear end face side of the light emitting element, respectively.
  • a second light-emitting device is a double-sided emission type in which a semiconductor layer is laminated, has a waveguide formed on the lamination surface, and emits light from both opposite sides across the waveguide.
  • a second reflecting portion having a second reflecting surface provided in the second emission direction, and the inclination angles of the first reflecting surface and the second reflecting surface with respect to the upper surface of the base are respectively Less than 45 °.
  • the second light emitting element since the inclination angle of the first reflecting surface and the second reflecting surface with respect to the upper surface of the base is smaller than 45 °, the emitted light emitted from the light emitting element in the front and rear directions. Are reflected by the respective reflecting surfaces, the two optical axes have a predetermined angular difference, so that the spread angle of the combined wave of the two outgoing lights can be made larger than the half-value width of the light emitted from the light emitting element. .
  • the value of the aspect ratio of the emitted light can be increased, the light emitted from the light emitting element can be efficiently incident on the light guide plate, and the light distribution in the light guide plate can be made uniform. As a result, even in the thin light guide plate of the backlight module, the optical coupling rate between the light emitting device and the light guide plate can be increased.
  • the light emitting element may be a semiconductor laser element or a super luminescent diode.
  • a backlight module includes a light emitting device including an edge emitting light emitting element having a waveguide formed on a laminated surface, and a light guide plate having a predetermined thickness.
  • the light emitting device is provided such that the long side of the waveguide is parallel to the thickness direction of the light guide plate with respect to the light guide plate.
  • the backlight module of the present invention a light source having a large aspect ratio of emitted light can be realized. Therefore, the light emitted from the light emitting element can be efficiently incident on the light guide plate, and the light distribution in the light guide plate can be made uniform. Therefore, even in the thin light guide plate of the backlight module, the light emitting device The optical coupling rate between the light guide plate and the light guide plate can be increased.
  • the light-emitting device includes a base that holds the light-emitting element, and a reflective portion that is provided in the emission direction of the light-emitting element on the base and has a convex reflective surface. It is preferable that a part thereof is a curved surface and one of the tangent planes on the convex reflecting surface intersects the optical axis of the emitted light of the light emitting element at an angle of 45 °.
  • the aspect ratio value of the emitted light can be further increased.
  • the light-emitting element is a double-sided emission type light-emitting element that emits light from both end faces facing each other across the waveguide
  • the light-emitting device includes a base that holds the light-emitting element, a base A first reflecting portion having a first reflecting surface provided in the first emitting direction of the light emitting element on the base, and a second reflecting surface provided in the second emitting direction of the light emitting element on the base It is preferable that the inclination angle of the first reflecting surface and the second reflecting surface with respect to the upper surface of the base is smaller than 45 °.
  • the aspect ratio value of the emitted light can be further increased.
  • the light emitted from the light emitting element can be efficiently incident on the light guide plate, and the light distribution in the light guide plate can be made uniform.
  • FIG. 1A and 1B show a light emitting device according to a first embodiment of the present invention and a backlight module using the same
  • FIG. 1A is a front view
  • FIG. ) Is a cross-sectional view taken along line Ib-Ib in FIG. 2A to 2C show a light emitting device and a backlight module using the same according to the first embodiment of the present invention
  • FIG. 2A is a perspective view of the light emitting device.
  • 2 (b) is an exploded perspective view of the backlight module
  • FIG. 2 (c) is a perspective view schematically showing how light from the light emitting device in the backlight module propagates.
  • FIG. 3 is a cross-sectional view schematically showing how light from a light emitting device in a light emitting device according to the first embodiment of the present invention and a backlight module using the light emitting device propagates.
  • 4 (a) and 4 (b) show the light emitting device according to the first embodiment of the present invention
  • FIG. 4 (a) is a plan view
  • FIG. 4 (b) is an IVb- It is sectional drawing in the IVb line.
  • 5 (a) to 5 (d) schematically show the operation of the light emitting device according to the first embodiment of the present invention
  • FIG. 5 (a) is a perspective view of the light emitting element
  • FIG. 6 is a sectional view showing a design example of the light emitting device according to the first embodiment of the present invention.
  • 7A and 7B show a design example of the light emitting device according to the first embodiment of the present invention.
  • FIG. 7A shows a ray tracing method based on the design example of FIG.
  • FIG. 7B is a graph showing the angle dependence of the light intensity calculated as a Gaussian distribution of the light intensity of the emitted light based on the light ray locus of FIG.
  • FIGS. 8A to 8C show a design example of a light emitting device according to a first modification of the first embodiment of the present invention.
  • FIG. 8A shows a convex reflecting surface and light emitting elements.
  • FIG. 8B is a partial cross-sectional view, and FIG. 8B is a graph depicting the locus of reflected light by the ray tracing method based on one design example of FIG. 8A, and FIG. Is a graph showing the angle dependence of the light intensity calculated as the Gaussian distribution of the light intensity of the emitted light based on the locus of the light beam.
  • FIG. 9 is a cross-sectional view showing a light emitting device according to a second modification of the first embodiment of the present invention.
  • FIGS. 11A and 11B show a light emitting device and a backlight module using the light emitting device according to a fourth modification of the first embodiment of the present invention.
  • FIG. 11A shows the backlight module.
  • FIG. 11B is a perspective view schematically showing how light from the light emitting device propagates,
  • FIG. 11B is a perspective view of the light emitting device, and
  • FIG. 11C is an exploded perspective view of the backlight module.
  • FIG. 12 (a) and 12 (b) show a light emitting device according to a fourth modification of the first embodiment of the present invention
  • FIG. 12 (a) is a cross-sectional view
  • FIG. 12 (b) is an operation. It is a typical sectional view showing. 13 (a) and 13 (b) show a light emitting device according to a second embodiment of the present invention
  • FIG. 13 (a) is a plan view
  • FIG. 13 (b) is an XIIIb- It is sectional drawing in a XIIIb line.
  • 14 (a) to 14 (d) schematically show the operation of the light emitting device according to the second embodiment of the present invention.
  • FIG. 14 (a) is a perspective view of the light emitting element
  • FIG. 14 (a) is a perspective view of the light emitting element
  • FIG. 15A and FIG. 15B show a light emitting device according to a modification of the second embodiment of the present invention
  • FIG. 15A is a cross-sectional view
  • FIG. It is a typical sectional view shown
  • 16A and 16B show a light emitting device according to a third embodiment of the present invention and a backlight module using the same
  • FIG. 16A is a sectional view of the light emitting device.
  • FIG. 16B is a perspective view schematically showing a state in which light from the light emitting device in the backlight module propagates.
  • FIG. 17A is a schematic cross-sectional view showing the operation of the light emitting device according to the fourth embodiment of the present invention, and FIG. 17B calculates the light intensity of incident light from the light emitting device as a Gaussian distribution.
  • FIG. 6 is a graph showing the angle dependency of the light intensity measured.
  • FIG. FIG. 18 is a schematic cross-sectional view showing a conventional light emitting device.
  • the backlight module 100 includes, for example, a light guide plate 190 and a plurality of side end surfaces (edges) of the light guide plate 190 that are spaced from each other.
  • a light-emitting device 1 a reflection plate 191 provided on a surface (back surface) opposite to the liquid crystal panel 195 (not shown) of the light guide plate 190; a diffusion plate 192 provided between the light guide plate 190 and the liquid crystal panel 195; And a phosphor layer 193 formed on the surface of the diffusion plate 192 on the liquid crystal panel 195 side.
  • Each light emitting device 1 is mounted on a wiring board 185, and a wiring 186 is connected to the wiring board 185.
  • the light emitting device 1 has an aspect ratio value between the short-axis direction divergence angle 50 a and the long-axis direction divergence angle 50 b from the light emitting surface 40. Output light 50 having a large divergence angle is output.
  • the wiring board 185 is formed with an electrode pad 184, an extraction electrode pad 188, and an internal wiring 187 that electrically connects them.
  • Each light emitting device 1 is connected to the electrode pad 184 and the extraction electrode pad 188 at the lower surface, and is arranged so that the light emitting surface 40 that is the upper surface thereof faces the side end surface of the light guide plate 190.
  • the one with the narrower divergence angle (short axis direction) of each light emitting device 1 is arranged in parallel with the thickness direction (x-axis direction) of the light guide plate 190, and the one with the wider divergence angle of the emitted light (major axis).
  • the direction is set to be parallel to the longitudinal direction (y-axis direction) of the light guide plate 190.
  • the emitted light 50 emitted from each light emitting device 1 enters from the side end face of the light guide plate 90.
  • the emitted light 50 enters the light guide plate 190 with low loss.
  • the divergence angle in the direction parallel to the light guide plate 190 is large, the light guide plate 190 greatly expands from the incident point. As a result, incident light can be uniformly distributed inside the light guide plate 190.
  • a plurality of micro prisms 190 a are formed on the entire surface of the light guide plate 190 facing the diffusion plate 192.
  • a plurality of triangular prisms 192a are formed on the entire surface of the diffusion plate 192 facing the light guide plate 190.
  • the emitted light 50 from the light emitting device 1 is emitted from the light emitting surface 40 of the light emitting device 1 and efficiently enters the light guide plate 190.
  • a part of the outgoing light 50 propagating through the light guide plate 190 is reflected by the reflecting plate 191 and then enters the microprism 190a, and the remaining part of the outgoing light 50 is directly incident on the microprism 190a.
  • the light emitted upward from the inside of the light guide plate 190 enters the diffusion plate 192 through the triangular prism 192a of the diffusion plate 192, and further enters the phosphor layer 193.
  • Part of the incident light becomes fluorescent light 75 and is combined with the outgoing light 70 to become white light, which is emitted from the backlight module 100.
  • the backlight module 100 since the backlight module 100 according to the first embodiment has high directivity in the cross-sectional direction of the emitted light 50 from the light emitting device 1, the backlight module 100 proceeds in the light guide plate 190 so that the reflection loss is reduced. Thus, it is possible to obtain a uniform backlight light source with lower loss.
  • the phosphor layer 193 is provided on the surface of the diffusion plate 192 opposite to the light guide plate 190.
  • the present invention is not limited to this.
  • the phosphor layer 193 is provided between the light guide plate 190 and the reflection plate 191, the surface of the light guide plate 190 on the diffusion plate 192 side, or the surface of the triangular prism 192 a of the diffusion plate 192, the same effect can be obtained. Obtainable.
  • the light-emitting device 1 includes a light-emitting element 2 and a package 4 that is a base for holding the light-emitting element 2.
  • the package 4 includes, for example, a first conductive plate 4a and a second conductive plate 4a made of a metal material obtained by plating silver (Ag) or the like on the surface of a metal having conductivity, pressability, and high thermal conductivity such as C194 (copper alloy).
  • the insulating part 4c electrically insulates the first conductive plate 4a and the second conductive plate 4b.
  • a convex reflection surface 4e is formed on a part of the edge 4d, and the convex reflection surface 4e is formed of, for example, a metal film such as silver (Ag), aluminum (Al), or copper (Cu),
  • a dielectric multilayer film or a combination of a metal film and a dielectric multilayer film is configured.
  • the convex reflecting surface 4e is made of the same material as the insulating portion 4c and the edge portion 4d. Can do.
  • the light-emitting element 2 is fixed on the first conductive plate 4a of the package 4 with the submount 3 having conductivity, for example, vapor-deposited metal such as Au on both surfaces of low resistance silicon. Further, the upper surface of the light emitting element 2 and the second conductive plate 4 b are electrically connected by a wire 9.
  • the light emitting element 2 an edge emission type light emitting element having a waveguide (stripe) extending in parallel with the upper surface is used.
  • the light emitting element 2 is preferably, for example, a semiconductor laser element that emits light having a wavelength of 430 nm to 480 nm, or a super luminescent diode (SLD). In particular, SLD is more preferable because of low coherence of emitted light.
  • the light emitting element 2 uses, for example, an angled stripe type SLD having a planar J-shaped waveguide structure will be described.
  • the light-emitting element 2 made of SLD for example, a plurality of semiconductor layers 2b having different conductivity types or compositions are stacked on a substrate 2a, and a waveguide 2c is formed in the stacked semiconductor layers 2b.
  • the waveguide 2c is formed in a planar J shape on the upper surface of the light emitting element 2, and the cross section in the direction perpendicular to the substrate surface of the waveguide 2c is a rectangular shape having a width 2d larger than the thickness 2e.
  • the waveguide 2 c is formed such that a region on the reflection end face 2 f side is formed in parallel to the central axis of the light emitting element 2 and is perpendicular to the end face of the light emitting element 2.
  • the region on the emission end face 2 g side in the waveguide 2 c is formed to be inclined by a predetermined angle ⁇ 1 with respect to the central axis 2 h of the light emitting element 2.
  • the radiation angle of the emitted light 30 when the radiation angle of the emitted light 30 is expressed using a radiation angle 30a in the x-axis (short axis) direction and a radiation angle 30b in the z-axis (major axis) direction, the radiation angle in the x-axis direction.
  • 30a has a half width of 10 °
  • the radiation angle 30b in the z-axis direction has a half width of 30 °, for example.
  • the cross-sectional structure of the waveguide 2c has a rectangular shape with a width in the horizontal direction (x-axis direction) larger than that in the vertical direction (z-axis direction).
  • the emitted light is emitted with its central axis 2 i shifted by an angle ⁇ 2 with respect to the central axis 2 h of the light emitting element 2.
  • the emission end face 2g of the light emitting element 2 is inclined with respect to the convex reflecting surface 4e by an angle ⁇ 2.
  • the emitted light 30 from the light emitting element 2 is preferably incident perpendicularly to the convex reflecting surface 4e.
  • the emitted light 30 emitted from the emission end face 2g of the light emitting element 2 is reflected by the convex reflection surface 4e provided on the upper surface of the edge 4d. Reflected in the direction perpendicular to the surface 4e. At this time, the light having the radiation angle 30b in the z-axis direction is reflected by the convex reflection surface 4e with the radiation angle spreading to the angle 50b.
  • light having a radiation angle 30a in the x-axis direction has a divergence angle 50a that hardly changes.
  • the emitted light 50 from the light emitting device 1 has a very large ratio (aspect ratio) value between the divergence angle 50a in the x-axis direction and the divergence angle 50b in the y-axis direction. It becomes radiation characteristics.
  • the optical coupling efficiency with the light guide plate 190 can be increased, and the inside of the light guide plate 190.
  • the light intensity distribution at can be made uniform.
  • FIG. 6 shows a design example of the light emitting element 2 and the convex reflecting surface 4e constituting the light emitting device 1 according to the first embodiment.
  • the light emitting point 2g1 of the light emitting element 2 is set at a position separated from the central axis 4g of the convex reflecting surface 4e by 0.6 mm in the x-axis direction and 0.35 mm in the z-axis direction.
  • the radius R of the convex reflecting surface 4e is 0.5 mm. Therefore, one tangent plane 4h among the plurality of tangent planes in contact with the convex reflection surface 4e intersects the optical axis of the emitted light 30 of the light emitting element 2 at an angle of 45 °. That is, the outgoing light 30 emitted almost in parallel to the bottom surface of the package 4 can be directed over a wide range (wide angle) above the package 4.
  • FIG. 7 shows the calculation result of the spread angle of the reflected light in the light emitting element 2 having the configuration of FIG.
  • FIG. 7A shows the locus of reflected light by the ray tracing method based on the design example of FIG.
  • FIG. 7B is based on the ray trajectory of FIG. 7A
  • the light intensity of the emitted light 30 is a Gaussian distribution
  • the half-value width of the divergence angle 30b on the major axis side is 30 °
  • the minor axis side The half-value width of the divergence angle 30a is calculated as 10 °.
  • the spread angle 50b of the reflected light in the y-axis direction is wider than the spread angle 30b on the long axis side, and is about twice as large as the half-value width.
  • the divergence angle 30a on the short axis side does not change after reflection, it can be seen that the aspect ratio value of the divergence angle can be effectively increased according to the first embodiment.
  • the cross-sectional shape of the convex reflecting surface 4e is a cylindrical surface, but is not limited thereto.
  • the cross-sectional shape of the convex reflecting surface 4e can increase the ratio (aspect ratio) of the divergence angle 50a in the x-axis (short axis) direction and the divergence angle 50b in the y-axis (major axis) direction from the light emitting device 1.
  • the cross-sectional shape of the convex reflective surface 4e can be set to various shapes from a linear shape to a free-form surface shape.
  • the cross section of the convex reflection surface 4e in the x-axis direction may be a concave shape with a recessed central portion.
  • the SLD is used as the light-emitting device 1, but the present invention is not limited to this as long as it is an edge-emitting light-emitting element in which a waveguide is formed.
  • a semiconductor laser element that emits light with a wavelength of 420 nm to 490 nm may be used.
  • the coherence is relatively low, for example, a multimode semiconductor laser element.
  • FIG. 5 it is not necessary to dispose the light emitting element 2 at a predetermined angle with respect to the convex reflection surface 4e, and the emission surface 2g and the convex reflection surface 4e face each other in parallel. You may arrange as follows.
  • the backlight module 100 has the light emitting device 1 disposed only on the lower side surface (lower surface) of the light guide plate 190, but this is not restrictive.
  • the light emitting device 1 is arranged by using the four side surfaces of the backlight module, such as being arranged on both the upper and lower surfaces of the light guide plate 190 or on both sides of the light guide plate 190. It is possible.
  • This modification is characterized in that a non-cylindrical surface is used instead of the cylindrical surface shown in the first embodiment for the convex reflecting surface 4e formed on the upper surface of the edge 4d.
  • the convex reflecting surface 4e is constituted by, for example, three continuous surfaces of a first flat inclined surface 4e1, a cylindrical surface 4e2, and a second flat inclined surface 4e3.
  • the first flat inclined surface 4e1 and the second flat inclined surface 4e3 have different inclination angles, and each tangent to the cylindrical surface 4e2.
  • the center of the convex surface of the convex reflecting surface 4e is set to 5.
  • the result of ray tracing using the design values of the light emitting point 2g1 of the light emitting element 2 held on the submount 3 and the convex reflecting surface 4e for example, using the values shown in FIG. Is shown in FIG. FIG. 8 (c) shows the light intensity of the emitted light based on the light beam of FIG. 8 (b) with a Gaussian distribution, the half-value width of the major axis side divergence angle 30b is 30 °, and the minor axis side divergence angle.
  • the half-value width of 30a is calculated as 10 °.
  • the diverging angle 50b in the y-axis direction of the reflected light is larger than the diverging angle 30b on the long axis side, and can be further expanded than in the first embodiment.
  • the full width at half maximum is about three times.
  • the short-axis-side divergence angle 30a does not change after reflection, and according to the present modification, the value of the aspect ratio of the divergence angle can be effectively increased.
  • the light-emitting device 1 includes a light-emitting element 2 and a package 4A.
  • the package 4A is made of, for example, a metal material obtained by plating Ag or the like on the surface of a metal having conductivity, pressability, and high thermal conductivity such as C194 (copper alloy), and the base portion 4f is formed by press working.
  • a metal material obtained by plating Ag or the like on the surface of a metal having conductivity, pressability, and high thermal conductivity such as C194 (copper alloy)
  • the base portion 4f is formed by press working.
  • a convex reflective surface 4e is formed on a part of the edge 4d, and the convex reflective surface 4e is formed of, for example, a metal film such as silver or aluminum, a dielectric multilayer film, or a combination thereof.
  • the edge 4d and the convex reflecting surface 4e can be made of the same material.
  • the light emitting element 2 is held on the pedestal 4f of the first conductive plate 4a in the package 4A.
  • the submount 3 is not required as the configuration of the light emitting device 1, and thus the light emitting device 1 can be configured more simply.
  • a copper alloy is used as the metal material constituting the first conductive plate 4a and the second conductive plate 4b.
  • the thermal expansion coefficient of a copper (Cu) tungsten (W) alloy or the like has a light-emitting element 2. It is more preferable to use a material close to the constituent material.
  • a transparent plate 41, a dichroic mirror 42, and a phosphor layer 43 are formed on the top of the package 4 in addition to the configuration of the first embodiment.
  • a transparent plate 41 made of glass or the like is fixed on the edge 4d of the package 4 so as to cover the light emitting element 2.
  • a dichroic mirror 42 made of a dielectric multilayer film that transmits light having a wavelength of 500 nm or less and reflects light having a wavelength of 500 nm or more is formed.
  • a phosphor layer 43 made of Ce: YAG (cerium-added yttrium / aluminum / garnet) that emits fluorescence having a center wavelength of 580 nm and a resin material such as silicone or epoxy is formed. .
  • the emitted light 50 emitted from the light emitting element 2 and having its aspect ratio increased by the convex reflecting surface 4e, for example, having a center wavelength of 450 nm is transmitted through the transparent plate 41, transmitted through the dichroic mirror 42, and phosphor. Incident on the layer 43.
  • a part of the outgoing light 50 incident on the phosphor layer 43 is converted into fluorescent light 55 having a center wavelength of 580 nm.
  • the converted fluorescent light 55 is emitted above the package 4, but part of it is emitted to the package 4 side.
  • the fluorescent light 55 emitted to the package 4 side is reflected upward by the dichroic mirror 42.
  • white light 60 in which the emitted light 50 and the fluorescent light 55 are mixed is emitted from the light emitting device 1 according to this modification.
  • the white light 60 is emitted as light having a very large aspect ratio, the white light 60 can be efficiently incident on the light guide plate 190 included in the backlight module 100.
  • the dichroic mirror 42 is formed on the upper surface of the transparent plate 41, the dichroic mirror 42 is not necessarily provided when the amount of radiation from the phosphor layer 43 toward the package 4 is small.
  • a convex portion 25 is formed on a part of the upper portion of the light emitting device 1, and the convex portion 25 of each light emitting device 1 is guided.
  • a plurality of recesses 190b are formed on the side end surface so as to be fitted to the side end surface of the optical plate 190.
  • a plurality of light emitting devices 1 are attached to the side end surface of the light guide plate 190 at a predetermined interval.
  • a light emitting element (not shown) is held inside the package 4, and the light emitting element is covered with a transparent optical element 20 in which convex portions 25 are formed. ing. Further, a phosphor layer 43 is formed on the surface of the convex portion 25.
  • the convex portions 25 of the light emitting devices 1 are fitted into the concave portions 190b of the light guide plate 190 in which a plurality of concave portions 190b are formed on one side end surface. It is attached as follows.
  • the light emitting device 1 emits white light having a large aspect ratio value of the emission angle. For this reason, the light emitted from the light emitting device 1 can be efficiently combined in the thickness direction of the light guide plate 190. In addition, since the incident light easily spreads in the plane of the light guide plate 190, the light distribution inside the light guide plate 190 can be easily made uniform.
  • the light emitting device 1 includes a transparent optical element 20 having a convex portion 25 above the light emitting element 2 and a convex portion 25 in addition to the configuration of the first embodiment. And a phosphor layer 43 formed on the upper surface.
  • a transparent optical element 20 made of, for example, a resin material such as acrylic or a glass material is fixed on the edge 4d of the package 4 so as to cover the light emitting element 2.
  • a convex portion 25 that is convex upward is formed by, for example, mold molding.
  • a phosphor layer 43 made of Ce: YAG that emits fluorescent light having a center wavelength of 580 nm and a resin material such as silicone or epoxy is formed.
  • white light 60 in which the emitted light 50 and the fluorescent light 55 are mixed is emitted from the light emitting device 1.
  • the white light 60 is emitted as light having a very large aspect ratio, it can be efficiently incident on the light guide plate 190 included in the backlight module 100.
  • the emitted light 50 from the light emitting element 2 is uniformly formed on the phosphor layer 43. Can be irradiated. For this reason, the color distribution of the white light 60 emitted from the light emitting device 1 can be reduced.
  • the light emitting element 2 is configured to emit light from both end faces of the waveguide.
  • a so-called angled stripe type light emitting element in which the angle formed between the emission end face and the direction in which the waveguide extends is deviated from a right angle is used.
  • the light emitting element 2 is, for example, a double-sided emission type semiconductor laser element having a wavelength of emitted light of 430 nm to 480 nm, and more preferably a super luminescent diode (SLD) having low coherence of emitted light. It is a light emitting element.
  • SLD super luminescent diode
  • the package 4B according to the present embodiment is protruded from the two edge portions 4d facing the two emission end faces of the light emitting element 2, respectively.
  • a reflective surface 4e is formed.
  • the light emitting element 2 includes a light emitting layer (not shown) for converting the current injected into the light emitting element 2 into light, and a waveguide 2c for confining the converted light. Is formed.
  • the waveguide 2c is inclined from the central axis 2h of the light emitting element 2 by an angle ⁇ 1, and operates as an SLD.
  • the emitted light propagates in the longitudinal direction of the waveguide 2a and is emitted as emitted light 30 and 31 from the front and rear emission end faces 2g, respectively. At this time, by making the reflectances of the emission end faces 2g before and after the light emitting element 2 equal to each other, the emitted lights 30 and 31 can be emitted from the front end face and the rear end face, respectively.
  • the radiation angle of the emitted light 30 is expressed using the radiation angle 30a in the x-axis (short axis) direction and the radiation angle 30b in the z-axis (major axis) direction
  • the radiation angle 30a in the x-axis direction is, for example, half
  • the value width is 10 °
  • the radiation angle 30b in the z-axis direction has, for example, a half-value width of 30 °.
  • the radiation angle of the emitted light 31 can be expressed using the radiation angle 31a in the x-axis (short axis) direction and the radiation angle 31b in the z-axis (major axis) direction.
  • the full width at half maximum is 10 °
  • the radiation angle 31b in the z-axis direction has a full width at half maximum of 30 °, for example.
  • the central axes of the emitted lights 30 and 31 respectively emitted from the front end face and the rear end face are shifted from the central axis 2h of the light emitting element 2 by an angle ⁇ 2. Emitted.
  • the emission end face 2g of the light emitting element 2 is inclined with respect to the convex reflecting surface 4e by an angle ⁇ 2.
  • the outgoing lights 30 and 31 from the light emitting element 2 are preferably incident perpendicularly to the convex reflecting surface 4e.
  • the emitted lights 30 and 31 emitted from the light emitting element 2 are reflected upward by the respective convex reflecting surfaces 4e.
  • the outgoing lights 30 and 31 having the radiation angles 30b and 31b in the z-axis direction are reflected by the convex reflection surface 4e with the radiation angles being expanded.
  • the radiation angles of the radiation angles 30a and 31a in the x-axis direction hardly change.
  • the outgoing lights 50 and 51 emitted from the light emitting device 1 are spread angles 50a and 51a in the x-axis (short axis) direction and spread angles in the y-axis (long axis) direction.
  • the ratio (aspect ratio) with 50b and 51b has a very large radiation characteristic.
  • the optical coupling efficiency with the light guide plate 190 is high, and the light intensity distribution inside the light guide plate 190 is made uniform. can do.
  • a transparent plate 41, a dichroic mirror 42, and a phosphor layer 43 are formed on the top of the package 4B.
  • a transparent plate 41 made of glass or the like is fixed on the edge 4d of the package 4B so as to cover the light emitting element 2.
  • a dichroic mirror 42 made of a dielectric multilayer film that transmits light having a wavelength of 500 nm or less and reflects light having a wavelength of 500 nm or more is formed.
  • a phosphor layer 43 made of Ce: YAG that emits fluorescence having a center wavelength of 580 nm and a resin material such as silicone or epoxy is formed.
  • the outgoing light 50 emitted from the light emitting element 2 and having an aspect ratio increased by the convex reflecting surface 4e, for example, having a center wavelength of 450 nm is transmitted through the transparent plate 41, transmitted through the dichroic mirror 42, and phosphor. Incident on the layer 43.
  • a part of the outgoing light 50 incident on the phosphor layer 43 is converted into fluorescent light 55 having a center wavelength of 580 nm.
  • the converted fluorescent light 55 is emitted above the package 4B, but a part thereof is emitted toward the package 4B.
  • the fluorescent light 55 radiated to the package 4B side is reflected upward by the dichroic mirror 42.
  • the light emitting device 1 emits white light 60 in which the emitted light 50 and the fluorescent light 55 are mixed. At this time, since the white light 60 is emitted as light having a very large aspect ratio, the white light 60 can be efficiently incident on the light guide plate 190 included in the backlight module 100.
  • the dichroic mirror 42 is formed on the upper surface of the transparent plate 41, the dichroic mirror 42 is not necessarily provided when the amount of radiation from the phosphor layer 43 toward the package 4B is small.
  • FIG. 16 A light emitting device according to the third embodiment of the present invention will be described below with reference to FIG. 16, the same components as those in FIGS. 1 and 2 are denoted by the same reference numerals, and the description thereof is omitted.
  • the backlight module 100 according to the third embodiment uses three types of light emitting devices for red light, green light, and blue light as light emitting devices.
  • the first light emitting device 1R that outputs red light 50R having a peak in the range of 570 nm to 700 nm and the green light having the peak in the range of 490 nm to 570 nm.
  • Three types of light emitting devices are used: a second light emitting device 1G that outputs light 50G, and a third light emitting device 1B that outputs blue light 50B having a peak in the wavelength range of 420 nm to 490 nm.
  • white light is generated by the red light 50R, the green light 50G, and the blue light 50B from the first light emitting device 1R, the second light emitting device 1G, and the third light emitting device 1B.
  • the phosphor layer 193 provided in the backlight module 100 used in the embodiment is not necessary.
  • the applied current can be individually changed for the first light emitting device 1R, the second light emitting device 1G, and the third light emitting device 1B, richer color reproducibility can be realized. it can.
  • each light emitting element used in the first light emitting device 1R, the second light emitting device 1G, and the third light emitting device 1B is preferably a super luminescent diode (SLD).
  • SLD super luminescent diode
  • the light emitting device 1A uses the double-sided emission type light emitting element 2 as in the second embodiment. Further, the first reflecting surface 4e4 and the second reflecting surface 4e5 that raise each outgoing light above the package 4C are configured as a plane.
  • the inclination angle ⁇ of the first reflecting surface 4e4 and the second reflecting surface 4e5 with respect to the bottom surface of the package 4C is set to an angle smaller than 45 °.
  • the optical axes 30c of the emitted lights have a predetermined angular difference. For this reason, the spread angle of the combined wave can be made larger than the half-value width of the light emitted from the light emitting element 2.
  • FIG. 17 (b) shows the calculation results obtained by changing the inclination angles ⁇ of the first reflecting surface 4e4 and the second reflecting surface 4e5 to 40 °, 37.5 °, and 35 °.
  • FIG. 17B shows that the spread angle of the reflected light increases as the angle ⁇ decreases, that is, as the angle difference of 45 ° increases.
  • the divergence angle of the emitted light from the light emitting device 1A can be easily increased. For this reason, the emitted light emitted from the light emitting element 2 can be efficiently incident on the light guide plate 190 and the light distribution in the light guide plate 190 can be made uniform. As a result, even in the thin light guide plate of the backlight module, the optical coupling rate between the light emitting device 1A and the light guide plate 190 can be increased.
  • transformation similar to the 2nd modification of a 1st Embodiment or a 3rd modification can be added.
  • the light-emitting device according to the present invention and the backlight module using the light-emitting device can efficiently enter the light emitted from the light-emitting element into the light guide plate, and can make the light distribution in the light guide plate uniform, For example, it is useful for an edge light type backlight light source device in a liquid crystal display device or a light emitting device applicable to a panel-shaped illuminator, a backlight module using the light emitting device, and the like.

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  • Semiconductor Lasers (AREA)

Abstract

L'invention concerne un dispositif électroluminescent qui est pourvu : d'un élément électroluminescent (2) du type à émission latérale, formé par la stratification de couches semi-conductrices et portant un guide d'ondes formé sur la surface stratifiée ; d'un boîtier (4) qui contient l'élément électroluminescent (2), et d'une partie latérale (section de réflexion) (4d) qui est installée dans le boîtier (4) dans la direction d'émission de la lumière de l'élément électroluminescent (2) et qui possède une surface de réflexion convexe (4e). Une partie de la surface de réflexion convexe (4e) est une surface courbe et l'un des plans tangentiels (4h) de la surface de réflexion convexe (4e) coupe l'axe optique de la lumière émise (30) de l'élément électroluminescent (2) à un angle de 45 °.
PCT/JP2010/004819 2010-03-03 2010-07-29 Dispositif électroluminescent et module de rétroéclairage l'utilisant WO2011108038A1 (fr)

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