WO2011094986A1 - 超晶格晶体谐振器及其作为超晶格晶体滤波器的用途 - Google Patents

超晶格晶体谐振器及其作为超晶格晶体滤波器的用途 Download PDF

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WO2011094986A1
WO2011094986A1 PCT/CN2010/073962 CN2010073962W WO2011094986A1 WO 2011094986 A1 WO2011094986 A1 WO 2011094986A1 CN 2010073962 W CN2010073962 W CN 2010073962W WO 2011094986 A1 WO2011094986 A1 WO 2011094986A1
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superlattice crystal
superlattice
crystal resonator
filter
resonator
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PCT/CN2010/073962
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English (en)
French (fr)
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刘平
朱永元
王竞宇
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无锡市好达电子有限公司
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Priority to US13/264,387 priority Critical patent/US8957745B2/en
Publication of WO2011094986A1 publication Critical patent/WO2011094986A1/zh

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/58—Multiple crystal filters
    • H03H9/60—Electric coupling means therefor
    • H03H9/605—Electric coupling means therefor consisting of a ladder configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/0023—Balance-unbalance or balance-balance networks
    • H03H9/0095—Balance-unbalance or balance-balance networks using bulk acoustic wave devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/542—Filters comprising resonators of piezoelectric or electrostrictive material including passive elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/56—Monolithic crystal filters

Definitions

  • the present invention relates to resonators and filters for use in communication devices, and more particularly to resonators for dielectric acoustic superlattice crystal materials and filters for dielectric acoustic superlattice crystal materials.
  • the existing surface acoustic wave resonator has the problems of low power consumption and high processing speed when the frequency is high.
  • the existing surface acoustic wave filter has the characteristics of good rectangular coefficient, small insertion loss and small size; but the power consumption is small, and there are limitations in applications with power requirements.
  • the existing dielectric filter has the characteristics of small insertion loss and high power consumption, but has a large rectangular coefficient and a large size, and has limitations in applications requiring selectivity. If the rectangular factor is increased, the insertion loss and size will increase, which will increase the application cost.
  • a state-of-the-art invention patent "High-frequency device with distributed domain ferroelectric crystal superlattice" provides a ferroelectric multilayer film acoustic superlattice crystal material or dielectric acoustic superlattice crystal A material, which is a type of microstructured dielectric with periodically modulated piezoelectric coefficients, whose modulation period is comparable to the wavelength of the ultrasonic wave (on the order of micrometers or submicrometers).
  • the superlattice alternates between positive and negative ferroelectric domains in a certain direction, and the piezoelectric coefficients alternately change symbols corresponding to positive and negative domains. As shown 1. As shown in Fig.
  • the domain interface vibrates and forms an elastic wave propagating in the ferroelectric body.
  • the direction of the arrow in the figure is the propagation direction of the elastic acoustic wave.
  • the strip grid in the figure represents the direction of the domain, Figure 1
  • the pattern of the plated electrodes in Figure 2 is different (the black surface in the figure is the surface of the plated electrode): the surface of the plated electrode in Figure 1 is perpendicular to the direction of the domain, Figure 2
  • the face of the plated electrode is parallel to the direction of the domain. There are two vibration modes depending on the plating mode.
  • Figure 1 is the vibration mode in which the direction of sound propagation is perpendicular to the direction of the electric field
  • Figure 2 It is a vibration mode in which the direction of sound propagation is parallel to the direction of the electric field.
  • the applicant has made an improvement study to provide a superlattice crystal resonator with good technical effects, and to provide the supercrystal.
  • a superlattice crystal filter As a superlattice crystal filter, the above-mentioned superlattice crystal resonator is easy to process and bear large power.
  • the superlattice crystal filter has the advantages of high power, low insertion loss and small size.
  • a superlattice crystal resonator having a substrate of a dielectric acoustic superlattice material, the electrodes being plated with electrodes on both sides.
  • the electrodes on both sides of the substrate are single electrodes, and the two single electrodes serve as an electrical input and an electrical output, respectively.
  • the electrode on one side of the substrate is a double electrode, and the electrode on the other side of the substrate is a single electrode, and the two electrodes on one side of the substrate serve as an electrical input end and an electrical output end, respectively.
  • a single electrode on one side is connected to the common ground.
  • the technical solution of the present invention is also to use the superlattice crystal resonator as a superlattice crystal filter.
  • the first embodiment uses the latter superlattice crystal resonator as a monolithic superlattice crystal filter.
  • a second embodiment is a series branch comprising the above-described superlattice crystal resonator, and a parallel type a parallel branch formed by an LC resonant circuit, one end of which is grounded, and the other end is respectively connected to an input end of the series branch, an output end, and a series connection end of the superlattice crystal resonator; LC
  • the resonant circuit is formed by a capacitor branch connected in parallel with a series branch of the inductor and the capacitor.
  • a third technical solution is a series branch comprising the above-described superlattice crystal resonator, and a parallel branch formed by the above-mentioned superlattice crystal resonator, one end of the parallel branch The other end is connected to the input end of the series branch, the output end, and the serial end of the superlattice crystal resonator.
  • a fourth technical solution is to include two series branches composed of the above-described superlattice crystal resonator, and a parallel branch formed by the above-mentioned superlattice crystal resonator, the parallel branch The two ends are respectively connected to the input end of the two series branches, the output end, and the serial end of the superlattice crystal resonator.
  • the superlattice crystal resonator of the invention adopts a dielectric acoustic superlattice crystal material as a substrate, and the resonance frequency thereof is determined only by the local oscillation period of the superlattice, and the thickness of the wafer can be independent of the thickness of the wafer.
  • the actual processing conditions or the processing level are selected, so that the problem that the thickness of the wafer which is faced when the high-frequency resonator is fabricated by a general piezoelectric crystal in the prior art is too thin, such as difficulty in processing and low power consumption, can be effectively solved.
  • the superlattice crystal filter of the invention takes into consideration the advantages of the surface acoustic wave filter and the dielectric filter, and the filter made of the dielectric acoustic superlattice crystal material is used as a substrate, in addition to the general filter performance, It has the advantages of high power, high selectivity or good rectangular coefficient, low insertion loss, small size or low cost.
  • Figure 1 is a vibration mode in which the direction of sound propagation is perpendicular to the direction of the electric field.
  • Figure 2 is a vibration mode in which the direction of sound propagation is parallel to the direction of the electric field.
  • FIG. 3 is a cross-sectional structural view of a single-ended superlattice crystal resonator.
  • Figure 4 is a graph showing the resonance characteristics of a single-ended superlattice crystal resonator using a mode of sound propagation perpendicular to the direction of the electric field.
  • Figure 5 is a graph showing the resonance characteristics of a single-ended superlattice crystal resonator using a mode of sound propagation parallel to the direction of the electric field.
  • Figure 6 is a cross-sectional view showing the structure of a double-ended superlattice crystal resonator.
  • Figure 7 is a plan view of Figure 6.
  • Figure 8 is a graph showing the resonance characteristics of the double-ended superlattice crystal resonator shown in Figure 6.
  • Fig. 9 is a schematic view showing the shape and position of an electrode of a monolithic superlattice crystal filter.
  • Figure 10 is a graph showing the filter characteristics of the superlattice crystal filter shown in Figure 9.
  • Fig. 11 is a schematic view showing the structure of a combined superlattice crystal filter composed of a series branch composed of a superlattice crystal resonator and a parallel branch formed by an LC resonance circuit.
  • Figure 12 is a graph showing the filter characteristics of the superlattice crystal filter shown in Figure 11.
  • Figure 13 is a schematic view showing the structure of a combined superlattice crystal filter comprising a series branch of a superlattice crystal resonator and a parallel branch connection.
  • Figure 14 is a diagram showing a peripheral matching circuit of the superlattice crystal filter shown in Figure 13.
  • Figure 15 is a graph showing the filter characteristics of the superlattice crystal filter shown in Figure 13.
  • Figure 16 is a block diagram showing the structure of a combined superlattice crystal filter for balanced input and output.
  • Figure 17 is a graph showing the filter characteristics of the superlattice crystal filter shown in Figure 16.
  • the substrate material of the superlattice crystal resonator is selected from the dielectric acoustic superlattice crystal material prepared according to the technical solution of the application No. 97106837.2; the supercrystal in the relevant embodiment
  • the resonance characteristic curve or resonance characteristic parameter of the lattice crystal resonator and the filter characteristic curve or filter characteristic parameter of the superlattice crystal filter are tested in a conventional manner.
  • the superlattice crystal resonator of the present embodiment includes a substrate 1 of a dielectric acoustic superlattice crystal material, and both sides of the substrate 1 are plated with a metal electrode 2 and a metal electrode 3, and electrodes 2 and The electrodes 3 are each a continuous single electrode.
  • the electrode 2 serves as an electrical input and the electrode 3 serves as an electrical output.
  • This structure is called a single-ended pair of superlattice crystal resonators. It can adopt two vibration modes: a vibration mode in which the sound propagation direction is perpendicular to the electric field direction as shown in FIG. 1; or a vibration mode in which the sound propagation direction is parallel to the electric field direction as shown in FIG. 2.
  • the superlattice crystal material with a local oscillation period of 7.8 um is selected, and the substrate 1 having a size of 3.7 mm ⁇ 1 mm ⁇ 0.5 mm is cut, and the electrode is plated according to the mode of Fig. 1 to obtain a resonance frequency of 707.66 MHz and a loss of 1.9 dB; anti-resonance frequency For 712.19 MHz, the loss is 23.0 dB, and the obtained single-ended resonator resonance characteristics are shown in Fig. 4, which adopts the vibration mode shown in Fig. 1.
  • the superlattice crystal material with a local oscillation period of 7.8 um is selected, and the substrate 1 having a size of 4 mm ⁇ 0.8 mm ⁇ 0.5 mm is cut, and the electrode is plated according to the mode of FIG. 2, and the resonance frequency is 450 MHz, and the loss is 3.0 dB; the anti-resonance frequency is 468.5MHz, loss 22.0dB, the resulting single-ended resonator resonance characteristics are shown in Figure 5, which uses the vibration mode shown in Figure 2.
  • the single-ended pair resonator is connected to the high-power RF signal generator.
  • the power capacity is 5W.
  • Embodiment 2 Double-ended pair superlattice crystal resonator
  • the superlattice crystal resonator of the present embodiment includes a substrate 1 of a dielectric acoustic superlattice crystal material, and one side of the substrate 1 is plated with a divided rectangular metal electrode 2 and a metal.
  • the electrode 2', the other side of the substrate 1 is plated with an undivided continuous single electrode 3.
  • Electrode 2 as an electrical input, electrode 2' As an electrical output, the electrode 3 is connected to the common ground.
  • This structure is called a double-ended pair of superlattice crystal resonators. It adopts a vibration mode in which the direction of sound propagation is perpendicular to the direction of the electric field as shown in FIG.
  • FIG. Figure 7 is a plan view of Figure 6, the electrode 3 size is 8mm ⁇ 0.5mm, the electrode 2, the electrode 2' are rectangular 3.9mm ⁇ 0.5mm, the intermediate spacing is 0.2mm (see Figure 7), the resonant frequency is 739.8MHz, The resonant performance of a double-ended resonator with a loss of 12.8dB is shown in Figure 8.
  • the double-ended pair resonator is connected to the high-power RF signal generator.
  • the power capacity is 5W.
  • Embodiment 3 Monolithic Superlattice Crystal Filter
  • the superlattice crystal filter of this embodiment is constituted by a double-ended superlattice crystal resonator as described in the above embodiment 2 (Fig. 6).
  • a double-ended superlattice crystal resonator as described in the above embodiment 2 (Fig. 6) can realize the function of the superlattice crystal filter.
  • This structure is called a monolithic superlattice crystal filter.
  • the superlattice crystal material having a local oscillation period of 7 um was selected, and the substrate 1 having a size of 8 mm ⁇ 3 mm ⁇ 0.5 mm was cut, and the electrode was plated in the mode of Fig. 1.
  • the electrode 3 has a size of 8 mm ⁇ 0.5 mm, and the electrode 2 and the electrode 2′ are both rectangular of 2 mm ⁇ 0.5 mm with a middle spacing of 1 mm, and the two ends are respectively 1.5 mm away from the substrate boundary (see FIG. 9), and the center frequency is 741.4 MHz.
  • the monolithic narrow-band superlattice crystal filter with a bandwidth of 600 kHz, a passband loss of 7.7 dB, and a stopband loss of 19 dB has a resonance performance as shown in Fig. 10.
  • the monolithic narrow-band superlattice crystal filter is connected to a high-power RF signal generator.
  • the power is adjusted to exceed 5 W, and the operation is performed for a period of time, the amplitude-frequency characteristic of the filter is deteriorated, thereby obtaining the above-mentioned single piece.
  • the narrowband superlattice crystal filter has a maximum power capacity of 5W.
  • Embodiment 4 Combined superlattice crystal filter A
  • the superlattice crystal filter of the present embodiment is composed of two single-ended superlattice crystal resonators as described in Embodiment 1 and a parallel branch composed of two LC parallel resonant circuits.
  • the branch connection is formed and is called a combined superlattice crystal filter.
  • Each of the LC parallel resonant circuits is formed by a capacitor C0 branch connected in parallel with a series branch of the inductor L1 and the capacitor C1.
  • the specific structure of the combined superlattice crystal filter of the present embodiment is as follows: a single-ended superlattice crystal resonator 1 and a single-ended superlattice crystal resonator 2 are connected in series, one end of the superlattice crystal resonator 1 As an input terminal, the series connection point of the superlattice crystal resonator 1 and the superlattice crystal resonator 2 and the other end of the superlattice crystal resonator 2 are respectively connected to one ends of two LC resonance circuits, and the two LC resonance circuits are The other end is connected to the common ground.
  • the center frequency of this embodiment is 457 MHz and the bandwidth is 12 MHz.
  • Two superlattice crystal material substrates with a local oscillation period of 7.8 um were selected, and the electrodes were plated as shown in Fig. 2 to obtain two superlattice crystal resonators with a resonant frequency of 460 MHz and an antiresonant frequency of 467 MHz as a series branch.
  • the resonator of the road In the LC resonant circuit of two parallel branches, the series capacitor C1 is 2.7pF, the series inductor L1 is 53.5nH, and the parallel capacitor C0 is 8pF.
  • the resonant frequencies of the two LC resonant circuits are 433MHz and the anti-resonant frequency is 484MHz.
  • the series branch superlattice crystal resonator works near the resonance point
  • the parallel branch LC resonance circuit works near the anti-resonance point
  • the impedance is the smallest, which constitutes the pass band of the filter.
  • the series branch superlattice crystal resonator works near the anti-resonance point
  • the parallel branch LC resonance circuit works near the resonance point
  • the impedance is the largest, which constitutes the stop band of the filter.
  • the filtering performance of the combined superlattice crystal filter is measured as follows: the passband loss is 11 dB, and the stopband loss is 29 dB (see Figure 12).
  • the size of the entire superlattice crystal filter is 21 mm x 12 mm x 6 mm.
  • the above-mentioned combined superlattice crystal filter is connected to a high-power RF signal generator.
  • the power is adjusted to exceed 5 W and the operation is performed for a period of time, the amplitude-frequency characteristic of the filter is deteriorated, thereby obtaining the above-mentioned combined supercrystal.
  • the crystal filter has a maximum power capacity of 5W.
  • Embodiment 5 Combined Superlattice Crystal Filter B
  • the superlattice crystal filter of the present embodiment is entirely composed of a superlattice crystal resonator, which is also referred to as a combined superlattice crystal filter. It comprises three superlattice crystal resonators 1, a superlattice crystal resonator 2 and a superlattice crystal resonator 3 constituting a series branch, and four superlattice crystal resonators 4 constituting a parallel branch, super A lattice crystal resonator 5, a superlattice crystal resonator 6, and a superlattice crystal resonator 7.
  • the seven superlattice crystal resonators are all single-ended superlattice crystal resonators as described in Embodiment 1 above.
  • the specific structure of the combined superlattice crystal filter of the present embodiment is as follows: superlattice crystal resonator 1, superlattice crystal resonator 2 and superlattice crystal resonator 3 are connected in series, superlattice crystal resonator 1 The other end serves as an input end, and the other end of the superlattice crystal resonator 3 serves as an output end; the two ends of the series branch of the superlattice crystal resonators 1 ⁇ 3 and the intermediate node are respectively connected to the superlattice crystal resonator 4, The superlattice crystal resonator 5, the superlattice crystal resonator 6 and the superlattice crystal resonator 7, the other ends of the superlattice crystal resonators 4 to 7 are connected to the common ground.
  • the center frequency of this embodiment is 277.8 MHz, and the bandwidth is 22 MHz.
  • a superlattice crystal material substrate with a local oscillation period of 13.7 um was selected, and the electrodes were plated as shown in Fig. 2 to obtain three superlattices whose resonance frequency was 276.2 MHz and antiresonance frequencies were 301.6 MHz, 302.5 MHz and 300.1 MHz, respectively.
  • the crystal resonator acts as a series branch resonator.
  • the superlattice crystal material substrate with a period of 15.1 um was selected, and the electrodes were plated as shown in Fig.
  • the crystal resonator acts as a parallel branch resonator.
  • a 70 nH inductor L is connected in series at the input end and the output end of the superlattice crystal filter of the embodiment, and then the pass band loss is 5.4 dB, and the stop band loss is 30 dB. See Figure 15).
  • the overall superlattice crystal filter has a size of 12 mm x 8 mm x 3.5 mm.
  • the above-mentioned combined superlattice crystal filter is connected to a high-power RF signal generator.
  • the power is adjusted to exceed 5 W and the operation is performed for a period of time, the amplitude-frequency characteristic of the filter is deteriorated, thereby obtaining the above-mentioned combined supercrystal.
  • the crystal filter has a maximum power capacity of 5W.
  • Embodiment 6 Combined Superlattice Crystal Filter C
  • the superlattice crystal filter of this embodiment is also composed entirely of a superlattice crystal resonator, which is also called a combined superlattice crystal filter.
  • This embodiment includes four superlattice crystal resonators 1, superlattice crystal resonators 2, superlattice crystal resonators 6, and superlattice crystal resonators 7 constituting a series branch, and three parallel branches Superlattice crystal resonator 3, superlattice crystal resonator 4 and superlattice crystal resonator 5.
  • the seven superlattice crystal resonators are all single-ended superlattice crystal resonators as described in Embodiment 1 above.
  • the specific structure of the combined superlattice crystal filter of the present embodiment is as follows: a superlattice crystal resonator 1 and a superlattice crystal resonator 2 are connected in series, and a superlattice crystal resonator 6 and a superlattice crystal resonator 7 are connected in series.
  • the two ends of the series branch composed of the superlattice crystal resonators 1, 2 and the intermediate nodes are respectively connected to the superlattice crystal resonator 3, the superlattice crystal resonator 4 and the superlattice crystal resonator 5, superlattice
  • the other ends of the crystal resonators 3 ⁇ 5 are respectively connected to the two ends of the series branch of the superlattice crystal resonators 6, 7 and the intermediate nodes, and the two ends of the superlattice crystal resonator 3 serve as balanced inputs, superlattice
  • the two ends of the crystal resonator 5 serve as a balanced output terminal, and a combined superlattice crystal filter which constitutes a balanced input and output has a completely symmetrical structure.
  • the center frequency of this embodiment is 884.375 MHz, and the bandwidth is 12 MHz.
  • the base of the superlattice crystal material with the local oscillation period of 6.3um is selected, and the electrode is plated as shown in Fig. 2, and the resonant frequency is 885.6MHz, and the antiresonant frequencies are respectively 898.1MHz, 898.3MHz, 898.1 and 898.2MHz.
  • the lattice crystal resonator acts as a series branch resonator.
  • the selection period is 6.4um superlattice crystal material substrate, and the electrode is plated as shown in Fig. 2, the resonance frequency is 869MHz, and the antiresonance frequencies are 884.2MHz and 884.5 respectively.
  • Three superlattice crystal resonators of MHz and 884.3 MHz act as parallel branch resonators.
  • the combined super-lattice crystal filter has a passband loss of 3.4dB and a stopband loss of 18dB (see Figure 17) through a 50ohm balanced input and output.
  • the overall superlattice crystal filter has a size of 12 mm x 8 mm x 3.5 mm.
  • the above-mentioned combined superlattice crystal filter is connected to a high-power RF signal generator.
  • the power is adjusted to exceed 5 W and the operation is performed for a period of time, the amplitude-frequency characteristic of the filter is deteriorated, thereby obtaining the above-mentioned combined supercrystal.
  • the crystal filter has a maximum power capacity of 5W.

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Description

超晶格晶体谐振器及其作为超晶格晶体滤波器的用途 技术领域
本发明涉及用于通信设备中的谐振器以及滤波器，尤其涉及介电体声学超晶格晶体材料的谐振器以及介电体声学超晶格晶体材料的滤波器。
背景技术
近年来，通信领域在减小如便携式电话这样的通信设备的尺寸和重量方面已经取得了显著的技术进步。为了实现这种技术进步，已经实现了对具有多种功能的组合部件的开发以及每个部件的简化和小型化。目前尤其关键的是，需要改进用于通信设备中的谐振器及滤波器的性能。
现有的声表面波谐振器具有承受功率小，频率高时加工工艺不易的问题。
现有的声表面波滤波器具有矩形系数好、插入损耗小、尺寸小的特点；但承受功率小，在有功率要求的应用时有局限性。现有的介质滤波器具有插入损耗小、承受功率大的特点，但矩形系数大、尺寸大，在有选择性要求的应用时有局限性。如果提高矩形系数，插入损耗和尺寸都会增加，必提高应用成本。
申请号为 97106837.2 的国家保密发明专利《具有分布电畴铁电晶体声学超晶格的高频器件》中提供了一种铁电多层膜声学超晶格晶体材料或称之为介电体声学超晶格晶体材料，其是一类压电系数周期性调制的微结构介电体，其调制周期与超声波波长可以比拟（微米或亚微米量级）。超晶格沿某一方向正负铁电畴交替排列，压电系数对应于正畴和负畴交替地改变符号。如图 1 、图 2 所示，当外加交变电场时，畴界面随之振动，并形成在铁电体中传播的弹性波，图中的箭头方向为弹性声波的传播方向。图中的带状栅格表示电畴的方向，图 1 、图 2 中镀电极的模式是不同的（图中黑色的面为镀电极的面）：图 1 中镀电极的面垂直于电畴的方向，图 2 中镀电极的面平行于电畴的方向。按照镀电极模式的不同，共有两种振动模式。图 1 是声传播方向垂直于电场方向的振动模式；图 2 是声传播方向平行于电场方向的振动模式。当弹性波波矢与超晶格调制波矢相等时产生共振增强效应，具有谐振器特性，其谐振频率只决定于超晶格的周期。
 技术问题
针对前述现有的声表面波谐振器、声表面波滤波器以及介质滤波器的缺点，申请人进行了改进研究，提供一种具有良好技术效果的超晶格晶体谐振器，以及提供该超晶格晶体谐振器作为超晶格晶体滤波器的用途，上述超晶格晶体谐振器易于加工、承受功率较大，上述超晶格晶体滤波器具有高功率、低插入损耗及小尺寸等优点。
技术解决方案
一种超晶格晶体谐振器，有一介电体声学超晶格材料的基片，基片的两面分别镀有电极。一种实施方案是所述基片两面的电极均是单电极，所述两个单电极分别作为电输入端及电输出端。另一种实施方案是所述基片一面的电极为双电极，基片另一面的电极为单电极，所述基片一面的双电极分别作为电输入端及电输出端，所述基片另一面的单电极连接公共地端。
本发明的技术方案还在于将所述超晶格晶体谐振器作为超晶格晶体滤波器的用途。第一种实施方案是将上述后一种超晶格晶体谐振器用作为单片式超晶格晶体滤波器。第二种实施方案是包括由上述前一种超晶格晶体谐振器构成的串联支路，还有由并联式 LC 谐振电路构成的并联支路，所述并联支路的一端接地，另一端分别与所述串联支路的输入端、输出端以及超晶格晶体谐振器的串接端连接；所述并联式 LC 谐振电路由电容器支路与电感器和电容器的串联支路并联连接构成。第三种技术方案是包括由上述前一种超晶格晶体谐振器构成的串联支路，还有由上述前一种超晶格晶体谐振器构成的并联支路，所述并联支路的一端接地，另一端分别与所述串联支路的输入端、输出端以及超晶格晶体谐振器的串接端连接。第四种技术方案是包括由上述前一种超晶格晶体谐振器构成的两个串联支路，还有上述前一种超晶格晶体谐振器构成的并联支路，所述并联支路的两端分别与所述两个串联支路的输入端、输出端以及超晶格晶体谐振器的串接端连接。
 有益效果
本发明的超晶格晶体谐振器，采用介电体声学超晶格晶体材料为基片，其谐振频率只决定于超晶格的本振周期，而与晶片的厚度无关，晶片的厚度可以依实际加工条件或加工水平进行选择，从而可有效解决现有技术中用一般压电晶体制作高频谐振器时面临的晶片厚度太薄等难以加工、承受功率小的问题。
本发明的超晶格晶体滤波器，兼顾声表面波滤波器和介质滤波器优点，采用介电体声学超晶格晶体材料为基片制作的滤波器，除具有一般滤波器性能外，还同时具有高功率、高选择性或矩形系数好、低插入损耗、尺寸小或成本低的优点。
 附图说明
图1是声传播方向垂直于电场方向的振动模式。
图2是声传播方向平行于电场方向的振动模式。
图3是单端对超晶格晶体谐振器的剖视结构示意图。
图4是采用声传播方向垂直于电场方向振动模式的单端对超晶格晶体谐振器谐振特性图。
图5是采用声传播方向平行于电场方向振动模式的单端对超晶格晶体谐振器谐振特性图。
图6是双端对超晶格晶体谐振器的剖视结构示意图。
图7是图6的俯视图。
图8是图6所示双端对超晶格晶体谐振器的谐振特性图。
图9是单片式超晶格晶体滤波器的电极形状、位置的示意图。
图10是图9所示超晶格晶体滤波器的滤波特性图。
图11是由超晶格晶体谐振器构成的串联支路以及由LC谐振电路构成的并联支路连接构成的组合式超晶格晶体滤波器的结构示意图。
图12是图11所示超晶格晶体滤波器的滤波特性图。
图13是分别由超晶格晶体谐振器构成的串联支路以及并联支路连接构成的组合式超晶格晶体滤波器的结构示意图。
图14是图13所示超晶格晶体滤波器的外围匹配电路图。
图15是图13所示超晶格晶体滤波器的滤波特性图。
图16是平衡输入输出的组合式超晶格晶体滤波器的结构示意图。
图17是图16所示超晶格晶体滤波器的滤波特性图。
 本发明的最佳实施方式
下面结合附图对本发明的具体实施方式做进一步说明。
以下各实施例中：所述超晶格晶体谐振器的基片材料皆选用按申请号为97106837.2专利申请的技术方案所制作的介电体声学超晶格晶体材料；有关实施例中的超晶格晶体谐振器的谐振特性曲线或谐振特性参数以及超晶格晶体滤波器的滤波特性曲线或滤波特性参数按常规方法测试。
实施例1：单端对超晶格晶体谐振器
如图3所示，本实施例的超晶格晶体谐振器包括：介电体声学超晶格晶体材料的基片1，基片1的两面镀有金属电极2和金属电极3，电极2和电极3均是连续的单电极。电极2作为电输入端，电极3作为电输出端。这种结构称之为单端对超晶格晶体谐振器。其可以采用两种振动模式：如图1所示的声传播方向垂直于电场方向的振动模式；或者，如图2所示的声传播方向平行于电场方向的振动模式。
选择本振周期是7.8um的超晶格晶体材料，切割大小3.7mm×1mm×0.5mm的基片1，按图1的模式镀电极，得到谐振频率为707.66MHz，损耗1.9dB；反谐振频率为712.19MHz，损耗23.0dB，得到的单端对谐振器的谐振特性见图4，其采用图1所示振动模式。
选择本振周期是7.8um的超晶格晶体材料，切割大小4mm×0.8mm×0.5mm的基片1，按图2的模式镀电极，得到谐振频率为450MHz，损耗3.0dB；反谐振频率为468.5MHz，损耗22.0dB，得到的单端对谐振器的谐振特性见图5，其采用图2所示振动模式。
将上述单端对谐振器接在大功率射频信号发生器上，当功率调整至超过5W，并工作一段时间后，该谐振器的幅频特性出现恶化，因此得到上述单端对谐振器的最大功率容量为5W。
 本发明的实施方式
实施例2：双端对超晶格晶体谐振器
如图6所示，本实施例的超晶格晶体谐振器包括：介电体声学超晶格晶体材料的基片1，基片1的一面镀有已分割的呈矩形的金属电极2和金属电极2’，基片1的另一面镀有未分割的连续的单电极3。电极2作为电输入端，电极2’ 作为电输出端，电极3接公共地端。这种结构称之为双端对超晶格晶体谐振器。其采用如图1所示的声传播方向垂直于电场方向的振动模式。
选择本振周期是7um的超晶格晶体材料，切割大小的8mm×1mm×0.5mm基片1，按图1的模式镀电极。图7为图6的俯视图，电极3尺寸为8mm×0.5mm，电极2、电极2’均为3.9mm×0.5mm的矩形，中间间距0.2mm（见图7），得到谐振频率为739.8MHz，损耗12.8dB的双端对谐振器，其谐振性能见图8。
将上述双端对谐振器接在大功率射频信号发生器上，当功率调整至超过5W，并工作一段时间后，该谐振器的幅频特性出现恶化，因此得到上述双端对谐振器的最大功率容量为5W。
实施例3：单片式超晶格晶体滤波器
本实施例的超晶格晶体滤波器是由一个如上述实施例2（图6）所述的双端对超晶格晶体谐振器构成的。换句话说，一个如上述实施例2（图6）所述的双端对超晶格晶体谐振器就可以实现超晶格晶体滤波器的功能。这种结构称之为单片式超晶格晶体滤波器。
选择本振周期是7um的超晶格晶体材料，切割大小8mm×3mm×0.5mm的基片1，按图1的模式镀电极。电极3尺寸为8mm×0.5mm，电极2、电极2’均为2mm×0.5mm的矩形，中间间距1mm，两端分别距离基片边界1.5mm（见图9），得到中心频率是741.4MHz，带宽为600kHz，通带损耗7.7dB，阻带损耗19dB的单片式窄带超晶格晶体滤波器，其谐振性能见图10。
将上述单片式窄带超晶格晶体滤波器接在大功率射频信号发生器上，当功率调整至超过5W，并工作一段时间后，该滤波器的幅频特性出现恶化，因此得到上述单片式窄带超晶格晶体滤波器的最大功率容量为5W。
实施例四：组合式超晶格晶体滤波器A
如图11所示，本实施例的超晶格晶体滤波器由两个如实施例1所述的单端对超晶格晶体谐振器构成串联支路以及由两个LC并联谐振电路构成的并联支路连接构成，称之为组合式超晶格晶体滤波器。其中每个LC并联谐振电路由电容器C0支路与电感器L1和电容器C1的串联支路并联连接构成。本实施例的组合式超晶格晶体滤波器的具体结构如下：单端对超晶格晶体谐振器1和单端对超晶格晶体谐振器2串联连接，超晶格晶体谐振器1的一端作为输入端，超晶格晶体谐振器1和超晶格晶体谐振器2的串接点以及超晶格晶体谐振器2的另一端分别与两个LC谐振电路的一端连接，两个LC谐振电路的另一端均连接公共地端。
本实施例的中心频率是457MHz，带宽是12MHz。选择本振周期是7.8um的两个超晶格晶体材料基片，按图2的方式镀电极，得到谐振频率是460MHz，反谐振频率是467MHz的两个超晶格晶体谐振器，作为串联支路的谐振器。两个并联支路的LC谐振电路中，串联电容C1为2.7pF，串联电感L1为53.5nH，并联电容C0为8pF，所得两个LC谐振电路的谐振频率分别为433MHz，反谐振频率为484MHz。
在460MHz附近，串联支路超晶格晶体谐振器工作在谐振点附近，并联支路LC谐振电路工作在反谐振点附近，阻抗最小，构成滤波器的通带。在466MHz、436MHz附近，串联支路超晶格晶体谐振器工作在反谐振点附近，并联支路LC谐振电路工作在谐振点附近，阻抗最大，构成滤波器的阻带。测得所述组合式超晶格晶体滤波器的滤波性能为：通带损耗为11dB，阻带损耗29dB（见图12）。整个超晶格晶体滤波器的尺寸为21mm×12mm×6mm。
将上述组合式超晶格晶体滤波器接在大功率射频信号发生器上，当功率调整至超过5W，并工作一段时间后，该滤波器的幅频特性出现恶化，因此得到上述组合式超晶格晶体滤波器的最大功率容量为5W。
实施例五：组合式超晶格晶体滤波器B
如图13所示，本实施例的超晶格晶体滤波器完全由超晶格晶体谐振器组成，也称之为组合式超晶格晶体滤波器。其包括三个构成串联支路的超晶格晶体谐振器1、超晶格晶体谐振器2和超晶格晶体谐振器3，以及四个构成并联支路的超晶格晶体谐振器4、超晶格晶体谐振器5、超晶格晶体谐振器6和超晶格晶体谐振器7。所述七个超晶格晶体谐振器均为如上述实施例1所述的单端对超晶格晶体谐振器。本实施例的组合式超晶格晶体滤波器的具体结构如下：超晶格晶体谐振器1、超晶格晶体谐振器2和超晶格晶体谐振器3串联，超晶格晶体谐振器1的另一端作为输入端，超晶格晶体谐振器3的另一端作为输出端；超晶格晶体谐振器1~3组成的串联支路的两端及中间节点分别连接超晶格晶体谐振器4、超晶格晶体谐振器5、超晶格晶体谐振器6和超晶格晶体谐振器7，超晶格晶体谐振器4~7的另一端均连接公共地端。
本实施例的中心频率是277.8MHz，带宽是22MHz。选择本振周期是13.7um的超晶格晶体材料基片，按图2的方式镀电极，得到谐振频率是276.2MHz，反谐振频率分别是301.6MHz、302.5MHz及300.1MHz的三个超晶格晶体谐振器作为串联支路谐振器。选择周期是15.1um的超晶格晶体材料基片，按图2的方式镀电极，得到谐振频率是253.5MHz，反谐振频率分别是276.1MHz、277.7MHz、276.1MHz及277.7MHz的四个超晶格晶体谐振器作为并联支路谐振器。
在276MHz附近，串联支路的三个超晶格晶体谐振器工作在谐振点附近，并联支路的四个超晶格晶体谐振器工作在反谐振点附近，阻抗最小，构成滤波器的通带。在301MHz、253MHz附近，串联支路的三个超晶格晶体谐振器工作在反谐振点附近，并联支路的四个超晶格晶体谐振器工作在谐振点附近，阻抗最大，构成滤波器的阻带。按照图14的外围匹配电路连接：在本实施例超晶格晶体滤波器的输入端和输出端分别串联一个70nH的电感L，然后测得通带损耗5.4dB，阻带损耗30dB的滤波性能（见图15）。整个超晶格晶体滤波器尺寸为12mm×8mm×3.5mm。
将上述组合式超晶格晶体滤波器接在大功率射频信号发生器上，当功率调整至超过5W，并工作一段时间后，该滤波器的幅频特性出现恶化，因此得到上述组合式超晶格晶体滤波器的最大功率容量为5W。
实施例六：组合式超晶格晶体滤波器C
如图16所示，本实施例的超晶格晶体滤波器也完全由超晶格晶体谐振器组成，也称之为组合式超晶格晶体滤波器。本实施例包括四个构成串联支路的超晶格晶体谐振器1、超晶格晶体谐振器2、超晶格晶体谐振器6和超晶格晶体谐振器7，以及三个构成并联支路的超晶格晶体谐振器3、超晶格晶体谐振器4和超晶格晶体谐振器5。所述七个超晶格晶体谐振器均为如上述实施例1所述的单端对超晶格晶体谐振器。本实施例的组合式超晶格晶体滤波器的具体结构如下：超晶格晶体谐振器1和超晶格晶体谐振器2串联，超晶格晶体谐振器6和超晶格晶体谐振器7串联，超晶格晶体谐振器1、2组成的串联支路的两端及中间节点分别连接超晶格晶体谐振器3、超晶格晶体谐振器4和超晶格晶体谐振器5，超晶格晶体谐振器3~5的另一端分别接超晶格晶体谐振器6、7组成的串联支路的两端及中间节点，超晶格晶体谐振器3的两端作为平衡输入端，超晶格晶体谐振器5的两端作为平衡输出端，组成平衡式输入输出的组合式超晶格晶体滤波器，其结构完全对称。
本实施例的中心频率是884.375MHz，带宽是12MHz。选择本振周期是6.3um的超晶格晶体材料基片，按图2的方式镀电极，得到谐振频率是885.6MHz，反谐振频率分别是898.1MHz、898.3MHz、898.1及898.2MHz的四个超晶格晶体谐振器作为串联支路谐振器。选择周期是6.4um的超晶格晶体材料基片，按图2的方式镀电极，得到谐振频率是869MHz，反谐振频率分别是884.2MHz、884.5 MHz及884.3MHz的三个超晶格晶体谐振器作为并联支路谐振器。
通过50ohm平衡输入输出测得上述组合式超晶格晶体滤波器的通带损耗为3.4dB，阻带损耗18dB的滤波性能（见图17）。整个超晶格晶体滤波器尺寸为12mm×8mm×3.5mm。
将上述组合式超晶格晶体滤波器接在大功率射频信号发生器上，当功率调整至超过5W，并工作一段时间后，该滤波器的幅频特性出现恶化，因此得到上述组合式超晶格晶体滤波器的最大功率容量为5W。
以上所述的仅是本发明的优选实施方式，本发明不限于以上实施例。可以理解，本领域技术人员在不脱离本发明的精神和构思的前提下，可以做出其他改进和变化。
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Claims (9)

  1. 一种超晶格晶体谐振器，其特征在于：有一介电体声学超晶格材料的基片，基片的两面分别镀有电极。
  2. 如权利要求 1 所述超晶格晶体谐振器，其特征在于：所述基片两面的电极均是单电极，所述两个单电极分别作为电输入端及电输出端。
  3. 如权利要求 1 所述超晶格晶体谐振器，其特征在于：所述基片一面的电极为双电极，基片另一面的电极为单电极；所述基片一面的双电极分别作为电输入端及电输出端，所述基片另一面的单电极连接公共地端。
  4. 如权利要求 1 所述超晶格晶体谐振器的用途，其特征在于：用作为超晶格晶体滤波器。
  5. 如权利要求 4 所述超晶格晶体谐振器的用途，其特征在于：如权利要求 3 所述的超晶格晶体谐振器用作为单片式超晶格晶体滤波器。
  6. 如权利要求 4 所述超晶格晶体谐振器用作为超晶格晶体滤波器的用途，其特征在于：包括由如权利要求 2 所述的超晶格晶体谐振器构成的串联支路，还有由并联式 LC 谐振电路构成的并联支路，所述并联支路的一端接地，另一端分别与所述串联支路的输入端、输出端以及超晶格晶体谐振器的串接端连接。
  7. 如权利要求 6 所述超晶格晶体谐振器用作为超晶格晶体滤波器的用途，其特征在于：所述并联式 LC 谐振电路由电容器支路与电感器和电容器的串联支路并联连接构成。
  8. 如权利要求 4 所述超晶格晶体谐振器用作为超晶格晶体滤波器的用途，其特征在于：包括由如权利要求 2 所述的超晶格晶体谐振器构成的串联支路，还有由权利要求 2 所述的超晶格晶体谐振器构成的并联支路，所述并联支路的一端接地，另一端分别与所述串联支路的输入端、输出端以及超晶格晶体谐振器的串接端连接。
  9. 如权利要求 4 所述超晶格晶体谐振器用作为平衡输入输出超晶格晶体滤波器的用途，其特征在于：包括由权利要求 2 所述的超晶格晶体谐振器构成的两个串联支路，还有由权利要求 2 所述的超晶格晶体谐振器构成的并联支路，所述并联支路的两端分别与所述两个串联支路的输入端、输出端以及超晶格晶体谐振器的串接端连接。
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