WO2011081473A3 - 그래핀 투명 전극 및 이를 포함하는 플렉시블 실리콘 박막 반도체 소자 - Google Patents

그래핀 투명 전극 및 이를 포함하는 플렉시블 실리콘 박막 반도체 소자 Download PDF

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Publication number
WO2011081473A3
WO2011081473A3 PCT/KR2010/009555 KR2010009555W WO2011081473A3 WO 2011081473 A3 WO2011081473 A3 WO 2011081473A3 KR 2010009555 W KR2010009555 W KR 2010009555W WO 2011081473 A3 WO2011081473 A3 WO 2011081473A3
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WO
WIPO (PCT)
Prior art keywords
semiconductor device
thin film
film semiconductor
silicon thin
graphene electrode
Prior art date
Application number
PCT/KR2010/009555
Other languages
English (en)
French (fr)
Other versions
WO2011081473A2 (ko
Inventor
안종현
홍병희
장호욱
장석재
구재본
Original Assignee
성균관대학교산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020100000593A external-priority patent/KR101375124B1/ko
Application filed by 성균관대학교산학협력단 filed Critical 성균관대학교산학협력단
Publication of WO2011081473A2 publication Critical patent/WO2011081473A2/ko
Publication of WO2011081473A3 publication Critical patent/WO2011081473A3/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode

Abstract

본원은 그래핀 투명 전극, 이를 포함하는 플렉시블 실리콘 박막 반도체 소자 및 그의 제조 방법에 관한 것으로서, 화학 기상 증착법을 이용하여 제조되는 대면적 그래핀 필름을 도전막으로서 포함하는 그래핀 투명 전극을 이용하여 플렉시블하고 투명한 박막 반도체 소자를 용이하게 제조할 수 있다.
PCT/KR2010/009555 2009-12-31 2010-12-30 그래핀 투명 전극 및 이를 포함하는 플렉시블 실리콘 박막 반도체 소자 WO2011081473A2 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2009-0135623 2009-12-31
KR20090135623 2009-12-31
KR10-2010-0000593 2010-01-05
KR1020100000593A KR101375124B1 (ko) 2009-10-16 2010-01-05 그래핀 투명 전극 및 이를 포함하는 플렉시블 실리콘 박막 반도체 소자

Publications (2)

Publication Number Publication Date
WO2011081473A2 WO2011081473A2 (ko) 2011-07-07
WO2011081473A3 true WO2011081473A3 (ko) 2011-11-17

Family

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Application Number Title Priority Date Filing Date
PCT/KR2010/009555 WO2011081473A2 (ko) 2009-12-31 2010-12-30 그래핀 투명 전극 및 이를 포함하는 플렉시블 실리콘 박막 반도체 소자

Country Status (1)

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WO (1) WO2011081473A2 (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101922864B1 (ko) * 2011-08-23 2018-11-28 삼성전기 주식회사 적층 세라믹 전자 부품 및 이의 제조방법
CN107428600A (zh) 2014-12-22 2017-12-01 康宁公司 将单层石墨烯转移至柔性玻璃基板上
CN114230898B (zh) * 2021-12-31 2024-01-12 河北科技大学 一种石墨烯透明导电薄膜及其制备方法和应用

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008108383A1 (ja) * 2007-03-02 2008-09-12 Nec Corporation グラフェンを用いる半導体装置及びその製造方法
US20080312088A1 (en) * 2007-06-13 2008-12-18 Samsung Electronics Co., Ltd. Field effect transistor, logic circuit including the same and methods of manufacturing the same
KR20090028007A (ko) * 2007-09-13 2009-03-18 삼성전자주식회사 그라펜 시트를 함유하는 투명 전극, 이를 채용한 표시소자및 태양전지
JP2009062247A (ja) * 2007-09-10 2009-03-26 Univ Of Fukui グラフェンシートの製造方法
KR20090051439A (ko) * 2007-11-19 2009-05-22 고려대학교 산학협력단 유기 박막 트랜지스터 및 그의 제조방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008108383A1 (ja) * 2007-03-02 2008-09-12 Nec Corporation グラフェンを用いる半導体装置及びその製造方法
US20080312088A1 (en) * 2007-06-13 2008-12-18 Samsung Electronics Co., Ltd. Field effect transistor, logic circuit including the same and methods of manufacturing the same
JP2009062247A (ja) * 2007-09-10 2009-03-26 Univ Of Fukui グラフェンシートの製造方法
KR20090028007A (ko) * 2007-09-13 2009-03-18 삼성전자주식회사 그라펜 시트를 함유하는 투명 전극, 이를 채용한 표시소자및 태양전지
KR20090051439A (ko) * 2007-11-19 2009-05-22 고려대학교 산학협력단 유기 박막 트랜지스터 및 그의 제조방법

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