WO2011074873A3 - E 급 전력 증폭기 - Google Patents
E 급 전력 증폭기 Download PDFInfo
- Publication number
- WO2011074873A3 WO2011074873A3 PCT/KR2010/008977 KR2010008977W WO2011074873A3 WO 2011074873 A3 WO2011074873 A3 WO 2011074873A3 KR 2010008977 W KR2010008977 W KR 2010008977W WO 2011074873 A3 WO2011074873 A3 WO 2011074873A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- power amplifier
- class
- terminal
- stage
- terminal connected
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
- H03F3/2176—Class E amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
- H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/06—A balun, i.e. balanced to or from unbalanced converter, being present at the input of an amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/405—Indexing scheme relating to amplifiers the output amplifying stage of an amplifier comprising more than three power stages
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/54—Two or more capacitor coupled amplifier stages in cascade
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Amplifiers (AREA)
Abstract
CMOS E 급 전력 증폭기가 개시된다. 본 발명의 일 실시예에 따르면, 트랜지스터로 구현되는 제1 전력 증폭기를 포함하는 메인 스테이지, 트랜지스터로 구현되는 제2 전력 증폭기를 포함하며 - 상기 제2 전력 증폭기에는 입력 신호가 입력됨 -, 출력단이 상기 메인 스테이지의 입력단과 연결되는 구동 스테이지, 및 일단이 상기 구동 스테이지의 출력단에 연결되며 타단이 그라운드에 연결되는 것으로 AC 등가화될 수 있는 제1 LC 공진기 및 일단이 상기 메인 스테이지의 입력단에 연결되며 타단이 그라운드에 연결되는 것으로 AC 등가화될 수 있는 제2 LC 공진기를 포함하는 E 급 전력 증폭기가 제공된다.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/516,230 US8704601B2 (en) | 2009-12-15 | 2010-12-15 | Class E power amplifier |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2009-0125138 | 2009-12-15 | ||
KR1020090125138A KR101102128B1 (ko) | 2009-12-15 | 2009-12-15 | E 급 전력 증폭기 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2011074873A2 WO2011074873A2 (ko) | 2011-06-23 |
WO2011074873A3 true WO2011074873A3 (ko) | 2011-11-03 |
Family
ID=44167865
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2010/008977 WO2011074873A2 (ko) | 2009-12-15 | 2010-12-15 | E 급 전력 증폭기 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8704601B2 (ko) |
KR (1) | KR101102128B1 (ko) |
WO (1) | WO2011074873A2 (ko) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9431975B2 (en) | 2011-04-04 | 2016-08-30 | The Trustees Of Columbia University In The City Of New York | Circuits for providing class-E power amplifiers |
US8686796B2 (en) * | 2011-04-19 | 2014-04-01 | Qualcomm Incorporated | RF power amplifiers with improved efficiency and output power |
US20150056940A1 (en) * | 2013-08-23 | 2015-02-26 | Qualcomm Incorporated | Harmonic trap for common gate amplifier |
US9184709B2 (en) * | 2013-10-08 | 2015-11-10 | Peregrine Semiconductor Corporation | Resonant pre-driver for switching amplifier |
US10063197B2 (en) | 2014-03-05 | 2018-08-28 | The Trustees Of Columbia University In The City Of New York | Circuits for power-combined power amplifier arrays |
US9614541B2 (en) | 2014-10-01 | 2017-04-04 | The Trustees Of Columbia University In The City Of New York | Wireless-transmitter circuits including power digital-to-amplitude converters |
US9985592B2 (en) | 2015-05-13 | 2018-05-29 | Skyworks Solutions, Inc. | High gain RF power amplifier with negative capacitor |
CN106571781B (zh) * | 2015-10-08 | 2020-09-25 | 大唐移动通信设备有限公司 | 一种Doherty功率放大电路 |
JP6662072B2 (ja) | 2016-02-04 | 2020-03-11 | 富士通株式会社 | 増幅器 |
JP6834366B2 (ja) * | 2016-11-04 | 2021-02-24 | 船井電機株式会社 | 電源装置 |
CN108933569A (zh) * | 2017-05-24 | 2018-12-04 | 南京理工大学 | 一种宽带磁耦合谐振式无线电能传输e类功率放大器 |
JP2019186877A (ja) * | 2018-04-17 | 2019-10-24 | 日本電信電話株式会社 | ミキサ |
CN109104161A (zh) * | 2018-08-20 | 2018-12-28 | 上海华虹宏力半导体制造有限公司 | 类e类射频功率放大器 |
CN110572132A (zh) * | 2019-09-10 | 2019-12-13 | 河北森骏电子科技有限公司 | 一种射频功率放大器 |
US11362109B2 (en) | 2019-10-14 | 2022-06-14 | International Business Machines Corporation | Integrated power amplifier |
CN111082788B (zh) * | 2019-12-30 | 2023-09-22 | 上海瞻芯电子科技有限公司 | 栅极驱动装置及电子设备 |
JP7341358B2 (ja) * | 2020-12-16 | 2023-09-08 | 三菱電機株式会社 | 電力増幅回路 |
CN216390932U (zh) * | 2021-09-26 | 2022-04-26 | 深圳飞骧科技股份有限公司 | Mmic射频功率放大器 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5023566A (en) * | 1989-12-21 | 1991-06-11 | General Electric Company | Driver for a high efficiency, high frequency Class-D power amplifier |
JPH07170129A (ja) * | 1993-12-14 | 1995-07-04 | Matsushita Electric Works Ltd | E級プッシュプル電力増幅回路 |
JPH08124685A (ja) * | 1994-10-26 | 1996-05-17 | Matsushita Electric Works Ltd | 電力増幅回路 |
EP1580879A2 (en) * | 2004-02-25 | 2005-09-28 | The Queen's University of Belfast | Class E power amplifier circuit and associated transmitter circuits |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5970340A (en) * | 1997-06-24 | 1999-10-19 | Micron Technology, Inc. | Method for making semiconductor device incorporating an electrical contact to an internal conductive layer |
US6320468B2 (en) * | 1998-10-23 | 2001-11-20 | Raytheon Company | Method and system for suppressing oscillations in a multi-stage amplifier |
US7265618B1 (en) * | 2000-05-04 | 2007-09-04 | Matsushita Electric Industrial Co., Ltd. | RF power amplifier having high power-added efficiency |
US7113744B1 (en) * | 1999-10-21 | 2006-09-26 | Broadcom Corporation | Adaptive radio transceiver with a power amplifier |
JP2003258567A (ja) * | 2002-03-04 | 2003-09-12 | Matsushita Electric Ind Co Ltd | 高周波回路 |
US6995613B2 (en) * | 2003-07-30 | 2006-02-07 | Tropian, Inc. | Power distribution and biasing in RF switch-mode power amplifiers |
TWI344263B (en) * | 2008-01-25 | 2011-06-21 | Univ Nat Taiwan | Low-noise amplifier |
-
2009
- 2009-12-15 KR KR1020090125138A patent/KR101102128B1/ko active IP Right Grant
-
2010
- 2010-12-15 US US13/516,230 patent/US8704601B2/en active Active
- 2010-12-15 WO PCT/KR2010/008977 patent/WO2011074873A2/ko active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5023566A (en) * | 1989-12-21 | 1991-06-11 | General Electric Company | Driver for a high efficiency, high frequency Class-D power amplifier |
JPH07170129A (ja) * | 1993-12-14 | 1995-07-04 | Matsushita Electric Works Ltd | E級プッシュプル電力増幅回路 |
JPH08124685A (ja) * | 1994-10-26 | 1996-05-17 | Matsushita Electric Works Ltd | 電力増幅回路 |
EP1580879A2 (en) * | 2004-02-25 | 2005-09-28 | The Queen's University of Belfast | Class E power amplifier circuit and associated transmitter circuits |
Also Published As
Publication number | Publication date |
---|---|
US8704601B2 (en) | 2014-04-22 |
KR20110068264A (ko) | 2011-06-22 |
KR101102128B1 (ko) | 2012-01-02 |
US20120319782A1 (en) | 2012-12-20 |
WO2011074873A2 (ko) | 2011-06-23 |
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