WO2011069344A1 - 一种化学机械抛光液 - Google Patents
一种化学机械抛光液 Download PDFInfo
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- WO2011069344A1 WO2011069344A1 PCT/CN2010/002033 CN2010002033W WO2011069344A1 WO 2011069344 A1 WO2011069344 A1 WO 2011069344A1 CN 2010002033 W CN2010002033 W CN 2010002033W WO 2011069344 A1 WO2011069344 A1 WO 2011069344A1
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- WO
- WIPO (PCT)
- Prior art keywords
- polishing liquid
- liquid according
- oxidizing agent
- iron
- water
- Prior art date
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- 238000005498 polishing Methods 0.000 title claims abstract description 62
- 239000007788 liquid Substances 0.000 title claims abstract description 27
- 239000007800 oxidant agent Substances 0.000 claims abstract description 25
- 239000003093 cationic surfactant Substances 0.000 claims abstract description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 38
- 239000000126 substance Substances 0.000 claims description 22
- 229910052742 iron Inorganic materials 0.000 claims description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(3+);trinitrate Chemical compound [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 claims description 8
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonium chloride Substances [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 claims description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 150000003242 quaternary ammonium salts Chemical class 0.000 claims description 6
- 235000019270 ammonium chloride Nutrition 0.000 claims description 5
- 125000005210 alkyl ammonium group Chemical group 0.000 claims description 4
- 239000012425 OXONE® Substances 0.000 claims description 2
- REYJJPSVUYRZGE-UHFFFAOYSA-N Octadecylamine Chemical compound CCCCCCCCCCCCCCCCCCN REYJJPSVUYRZGE-UHFFFAOYSA-N 0.000 claims description 2
- 239000008119 colloidal silica Substances 0.000 claims description 2
- DDXLVDQZPFLQMZ-UHFFFAOYSA-M dodecyl(trimethyl)azanium;chloride Chemical group [Cl-].CCCCCCCCCCCC[N+](C)(C)C DDXLVDQZPFLQMZ-UHFFFAOYSA-M 0.000 claims description 2
- XJWSAJYUBXQQDR-UHFFFAOYSA-M dodecyltrimethylammonium bromide Chemical compound [Br-].CCCCCCCCCCCC[N+](C)(C)C XJWSAJYUBXQQDR-UHFFFAOYSA-M 0.000 claims description 2
- 229910021485 fumed silica Inorganic materials 0.000 claims description 2
- HJKYXKSLRZKNSI-UHFFFAOYSA-I pentapotassium;hydrogen sulfate;oxido sulfate;sulfuric acid Chemical compound [K+].[K+].[K+].[K+].[K+].OS([O-])(=O)=O.[O-]S([O-])(=O)=O.OS(=O)(=O)O[O-].OS(=O)(=O)O[O-] HJKYXKSLRZKNSI-UHFFFAOYSA-I 0.000 claims description 2
- 229940051841 polyoxyethylene ether Drugs 0.000 claims description 2
- 229920000056 polyoxyethylene ether Polymers 0.000 claims description 2
- JMCRETWEZLOFQT-UHFFFAOYSA-M trimethyl(3-triethoxysilylpropyl)azanium;chloride Chemical compound [Cl-].CCO[Si](OCC)(OCC)CCC[N+](C)(C)C JMCRETWEZLOFQT-UHFFFAOYSA-M 0.000 claims description 2
- MVFCKEFYUDZOCX-UHFFFAOYSA-N iron(2+);dinitrate Chemical group [Fe+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MVFCKEFYUDZOCX-UHFFFAOYSA-N 0.000 claims 2
- DJYMXSYYMBQFEA-UHFFFAOYSA-N Br.NS Chemical compound Br.NS DJYMXSYYMBQFEA-UHFFFAOYSA-N 0.000 claims 1
- 239000003795 chemical substances by application Substances 0.000 claims 1
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N iron oxide Inorganic materials [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims 1
- NDLPOXTZKUMGOV-UHFFFAOYSA-N oxo(oxoferriooxy)iron hydrate Chemical compound O.O=[Fe]O[Fe]=O NDLPOXTZKUMGOV-UHFFFAOYSA-N 0.000 claims 1
- AQZSPJRLCJSOED-UHFFFAOYSA-M trimethyl(octyl)azanium;chloride Chemical compound [Cl-].CCCCCCCC[N+](C)(C)C AQZSPJRLCJSOED-UHFFFAOYSA-M 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 abstract description 5
- 239000002253 acid Substances 0.000 description 17
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 10
- 229910052721 tungsten Inorganic materials 0.000 description 10
- 239000010937 tungsten Substances 0.000 description 10
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 9
- 229910052700 potassium Inorganic materials 0.000 description 9
- 239000011591 potassium Substances 0.000 description 9
- 239000003292 glue Substances 0.000 description 7
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 6
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- -1 potassium ferricyanide Chemical compound 0.000 description 6
- 229910052717 sulfur Inorganic materials 0.000 description 6
- 239000011593 sulfur Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 4
- 229910017604 nitric acid Inorganic materials 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 230000036571 hydration Effects 0.000 description 3
- 238000006703 hydration reaction Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000005984 hydrogenation reaction Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- BIMRNYDJQHZYKY-UHFFFAOYSA-N CCCCCCCCCCCC.[S] Chemical compound CCCCCCCCCCCC.[S] BIMRNYDJQHZYKY-UHFFFAOYSA-N 0.000 description 1
- 241001024304 Mino Species 0.000 description 1
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 1
- YFAGTKDVNDHKEJ-UHFFFAOYSA-N [Si].O[N+]([O-])=O Chemical compound [Si].O[N+]([O-])=O YFAGTKDVNDHKEJ-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- KXHPPCXNWTUNSB-UHFFFAOYSA-M benzyl(trimethyl)azanium;chloride Chemical compound [Cl-].C[N+](C)(C)CC1=CC=CC=C1 KXHPPCXNWTUNSB-UHFFFAOYSA-M 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 230000002925 chemical effect Effects 0.000 description 1
- 229940114081 cinnamate Drugs 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- ICIWUVCWSCSTAQ-UHFFFAOYSA-M iodate Chemical compound [O-]I(=O)=O ICIWUVCWSCSTAQ-UHFFFAOYSA-M 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000006174 pH buffer Substances 0.000 description 1
- 239000010695 polyglycol Substances 0.000 description 1
- 229920000151 polyglycol Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- DWRGLIHFAJTMGM-UHFFFAOYSA-N thiohydroxylamine;hydrochloride Chemical compound Cl.SN DWRGLIHFAJTMGM-UHFFFAOYSA-N 0.000 description 1
- WBYWAXJHAXSJNI-VOTSOKGWSA-M trans-cinnamate Chemical compound [O-]C(=O)\C=C\C1=CC=CC=C1 WBYWAXJHAXSJNI-VOTSOKGWSA-M 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Definitions
- the present invention relates to a tungsten chemical mechanical polishing liquid, and more particularly to a chemical mechanical polishing liquid containing a cationic surfactant.
- CMP chemical mechanical polishing
- CMP Chemical mechanical polishing
- It usually consists of a polishing table with a polishing pad and a polishing head for carrying the chip.
- the polishing head holds the chip and then presses the front side of the chip against the polishing pad.
- the polishing head moves linearly on the polishing pad or in the same direction of motion as the polishing table.
- the slurry containing the abrasive is dropped onto the polishing pad and laid flat on the polishing pad by centrifugation.
- the surface of the chip achieves global planarization under both mechanical and chemical effects.
- the main mechanism for the metal layer CMP is considered to be:
- the oxidant first oxidizes the metal surface into a film, and the abrasive film represented by silica and alumina mechanically removes the oxide film to produce a new metal surface to continue to be oxidized.
- the two roles work together.
- Metal tungsten one of the targets of chemical mechanical polishing (CMP), has high electron current resistance at high current density and can form a good ohmic contact with silicon, so it can be used as a filler metal for contact windows and via holes. Diffusion barrier.
- CMP chemical mechanical polishing
- oxidants are mainly salts of iron-containing metals, iodate, hydrogen peroxide, and the like.
- U.S. Patent 5,340,370 discloses a formulation for tungsten chemical mechanical polishing (CMP) comprising 0.1 M potassium ferricyanide, 5% silica, and acetate as a pH buffer.
- CMP chemical mechanical polishing
- U.S. Patent Nos. 5,980, 775, 5, 958, 288, 6, 068, 787 discloses the use of the use of iron ions as a catalyst and hydrogen peroxide as an oxidant for a tungsten chemical mechanical polishing (CMP) process.
- CMP chemical mechanical polishing
- the content of iron ions is reduced to about 200 ppm, but since the iron ions catalyze the decomposition of hydrogen peroxide, the catalyst is stored separately from the oxidant and mixed before chemical mechanical polishing (CMP).
- CMP chemical mechanical polishing
- the slurry after mixing with the oxidizing agent is unstable and will slowly decompose and fail.
- the above tungsten chemical mechanical polishing liquid is obtained by oxidizing a tungsten surface into a film by an oxidizing agent, and then mechanically removing the oxide film by an abrasive represented by silica and alumina. Due to mechanical friction, frictional noise is generated when polishing.
- the technical problem to be solved by the invention is to reduce and eliminate polishing noise, improve the operating environment, and reduce Low polishing pad friction, extending the life of the polishing pad.
- the chemical mechanical polishing liquid of the present invention contains water, an abrasive, an oxidizing agent and a water-soluble cationic surfactant.
- the abrasive is fumed silica and/or colloidal silica.
- the oxidizing agent is a composition containing an iron-containing oxidizing agent or an iron-containing oxidizing agent and other oxidizing agents.
- the iron-containing oxidizing agent is ferric nitrate
- the composition of the iron-containing oxidizing agent and the other oxidizing agent is a combination of ferric nitrate and potassium monopersulfate.
- the water-soluble cationic surfactant is long-chain mercapto ammonium chloride, long-chain alkyl ammonium bromide, long-chain alkyl ammonium chloride having a terminal silicon-oxygen bond, and a Jimmy type quaternary ammonium salt.
- the polymeric quaternary ammonium salts One or more of the polymeric quaternary ammonium salts.
- the water-soluble cationic surfactant is preferably dodecyltrimethylammonium chloride, dodecyltrimethylammonium bromide, benzyltrimethylammonium chloride, octyltrimethyl One or more of ammonium chloride, 3-triethoxysilylpropyltrimethylammonium chloride, octadecylamine polyoxyethylene ether double quaternary ammonium salt and/or polyquaternium-10kind.
- the mass percentage of the abrasive is 0.2% to 4%.
- the mass percentage of the ferric nitrate is 0.05% to 1.5%.
- the water-soluble cationic surfactant has a concentration of from 100 to 500 ppm.
- the polishing liquid has a pH of 1.5 to 2.5.
- the positive progress of the invention is that by adding a cationic surfactant to the tungsten chemical mechanical polishing liquid, the polishing noise is significantly reduced and eliminated, the operating environment is improved, and the polishing pad is reduced. Wipe and extend the life of the polishing pad.
- Polishing conditions polishing machine mirra, 8 inch wafer (inch wafer), grinding pressure 4 psi, polishing liquid volume lOOml / mino Table 1 gives the chemical mechanical polishing liquid of the present invention Examples 1 to 10 and Comparative Example 1 ⁇
- the formulation of 2, according to the components listed in Table 1 and their contents, is uniformly mixed in deionized water, and adjusted to the desired pH with potassium hydroxide or dilute nitric acid to prepare a chemical mechanical polishing liquid.
- Example 10 Gui 0.2 Iron 0.05 Potassium 5 Acid 0.05 Salt - 10 200 ppm 1.7 1130 It can be found in Comparative Example 1 and Comparative Example 2 that, in the absence of the cationic surfactant of the present invention, a single oxidizing agent is used regardless of the polishing liquid. , or use of double oxidants, will produce high noise.
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
一种化学机械抛光液
技术领域
本发明涉及一种用于钨化学机械抛光液，具体涉及一种含有阳离子表面 活性剂的化学机械抛光液。 技术背景
随着半导体技术的不断发展， 以及大规模集成电路互连层的不断增加， 导电层和绝缘介质层的平坦化技术变得尤为关键。二十世纪 80年代，由 IBM 公司首创的化学机械研磨（CMP)技术被认为是目前全局平坦化的最有效的 方法。
化学机械研磨（CMP)由化学作用、机械作用以及这两种作用结合而成。 它通常由一个带有抛光垫的研磨台， 及一个用于承载芯片的研磨头组成。其 中研磨头固定住芯片， 然后将芯片的正面压在抛光垫上。 当进行化学机械研 磨时， 研磨头在抛光垫上线性移动或是沿着与研磨台一样的运动方向旋转。 与此同时， 含有研磨剂的浆液被滴到抛光垫上， 并因离心作用平铺在抛光垫 上。 芯片表面在机械和化学的双重作用下实现全局平坦化。
对金属层 CMP的主要机制被认为是： 氧化剂先将金属表面氧化成膜， 以二氧化硅和氧化铝为代表的研磨剂将该层氧化膜机械去除，产生新的金属 表面继续被氧化， 这两种作用协同进行。
作为化学机械研磨（CMP)对象之一的金属钨， 在高电流密度下， 抗电 子迁移能力强， 并且能够与硅形成很好的欧姆接触， 所以可作为接触窗及介 层洞的填充金属及扩散阻挡层。
针对钨的化学机械研磨（CMP), 常用的氧化剂主要有含铁金属的盐类， 碘酸盐， 双氧水等。
1991年， F. B. Kaufman等报道了铁氰化钾用于钨的化学机械研磨（CMP) 技术。 ("Chemical Mechanical Polishing for Fabricating Patterned W Metal Features as Chip Interconnects" , Journal of the Electrochemical Society, Vol. 138, No. 11， 1991年 11月）。
美国专利 5340370公开了一种用于钨化学机械研磨（CMP)的配方， 其 中含有 0.1M铁氰化钾， 5%氧化硅， 同时含有醋酸盐作为 pH缓冲剂。
美国专利 5980775， 5958288, 6068787公开了用铁离子作催化剂、 双氧 水作氧化剂进行钨化学机械研磨（CMP)方法。 在这种催化机制中， 铁离子 的含量被降至了 200ppm左右， 但由于铁离子催化双氧水分解， 所以催化剂 要和氧化剂分开存放， 在化学机械研磨（CMP)之前进行混合。 另外， 和氧 化剂混合好之后的研磨液不稳定， 会缓慢分解失效。
美国专利 5527423， 6008119, 6284151等公开了 Fe(N03)3、 氧化铝体系 进行钨的化学机械研磨（CMP)方法。该抛光体系在静态腐蚀速率 （static etch mte)上具有优势， 但是在产品缺陷 （defect)上存在显著不足。
以上用于钨化学机械抛光液都是通过氧化剂先将钨表面氧化成膜，然后 通过二氧化硅和氧化铝为代表的研磨剂将氧化膜机械去除。 由于机械摩擦， 会抛光时产生摩擦噪音。 发明概要
本发明所要解决的技术问题是降低并消除抛光噪音， 改善操作环境， 降
低抛光垫的摩擦， 延长抛光垫的使用寿命。
本发明的化学机械抛光液， 含有水， 研磨剂， 氧化剂和水溶性阳离子表 面活性剂。
本发明中， 所述的研磨剂为气相二氧化硅 （f med silica) 和 /或硅溶胶 (colloidal silica)。
本发明中，所述的氧化剂为含铁氧化剂或含铁氧化剂和其他氧化剂的组 合物。
本发明中， 所述的含铁氧化剂为硝酸铁， 所述的含铁氧化剂和其他氧化 剂的组合物为硝酸铁和单过硫酸氢钾的组合物。
本发明中， 所述的水溶性阳离子表面活性剂为长链垸基氯化铵、 长链烷 基溴化铵、 末端含硅氧键的长链烷基氯化铵、 吉米奇类型季铵盐、 聚合型季 铵盐中的一种或多种。
本发明中，所述的水溶性阳离子表面活性剂优选为十二烷基三甲基氯化 铵、 十二垸基三甲基溴化铵、 苄基三甲基氯化铵、 辛基三甲基氯化铵、 3-三 乙氧基硅基丙基三甲基氯化铵、十八垸基胺聚氧乙烯醚双季铵盐和 /或聚季铵 盐 -10中的一种或多种。
本发明中， 所述的研磨剂的质量百分比为 0.2%~4%。
本发明中， 所述的硝酸铁的质量百分比为 0.05%〜1.5%。
本发明中， 所述的水溶性阳离子表面活性剂的浓度为 100-500ppm。 本发明中， 所述的抛光液的 pH值为 1.5-2.5。
本发明的积极进步效果在于：通过在用于钨化学机械抛光液中加入阳离 子表面活性剂， 显著降低并消除抛光噪音， 改善操作环境， 降低抛光垫的摩
擦， 延长抛光垫的使用寿命。
发明内容
下面用实施例来进一步说明本发明， 但本发明并不受其限制。 下述实施 例中， 百分比均为质量百分比。
抛光条件： 抛光机台 mirra, 8 英寸晶圆 (inch wafer), 研磨压力 4psi， 抛 光液 ΐ量 lOOml/mino 表 1给出了本发明的化学机械抛光液实施例 1〜10和对比例 1~2的配方， 按表 1中所列组分及其含量， 在去离子水中混合均匀， 用氢氧化钾或稀硝酸 调到所需 pH值， 即制得化学机械抛光液。
表 1化学机械抛光液实施例 1~12以及对比例 1〜2
过
硫
硅 硝 酸 丙
对比 溶 酸 氢
例 2 胶 1.7 铁 0.2 钾 3.33 酸 0.09 1.7 3174 单
过
硫 十二烷
桂 硝 酸 丙 基三甲
实施 溶 酸 氢 基氯化
例 3 胶 1.7 铁 0.2 钾 3.33 酸 0.09 铵 200ppm 1.7 3130 无 单
过
硫
硅 硝 酸 丙 苄基三
实施 溶 酸 氢 甲基氯
例 4 胶 1.7 铁 0.15 钾 5 酸 0.18 化铵 lOOppm 1.7 2786 无 单
过
硫
娃 硝 酸 丙 辛基三
实施 溶 酸 氢 甲基氯
例 5 胶 1.5 铁 0.2 钾 5 酸 0.18 化铵 300ppm 1.7 2897 无 单
过 3-三乙
硫 氧基硅
娃 硝 酸 丙 基丙基
实施 溶 酸' 氢 三甲基
例 6 胶 4 铁 0.2 钾 5 酸 0.14 氯化铵 200ppm 1.7 2337 无 单
过
硫 十二垸
硅 硝 酸 丙 基三甲
实施 溶 酸 氢 基氯化
例 7 胶 1.5 铁 0.15 钾 3.33 酸 0.14 铵 201ppm 1.7 3048 无 单
过
硫 十二垸
娃 硝 酸 丙 基三甲
实施 溶 酸 氢 基氯化
例 8 胶 1 铁 0.15 钾 5 酸 0.14 铵 500ppm 1.7 3080 无 气 单
相 过 十八垸
― 硫 基胺聚
氧 硝 酸 丙 氧乙烯
实施 化 酸 氢 醚双季
例 9 硅 1.7 铁 0.15 钾 5 酸 0.05 铰盐 200ppm 1.7 2564 无
气 单
相 过
硫
氧 硝 酸 丙
实施 化 酸 氢 _ - 聚季铰
例 10 桂 0.2 铁 0.05 钾 5 酸 0.05 盐 -10 200ppm 1.7 1130 无 从对比例 1和对比例 2中可以发现，在没有本发明所述的阳离子表面活 性剂存在的情况下， 无论抛光液使用单氧化剂， 还是使用双氧化剂， 都会产 生很高的噪音。
从实施例 1〜10中可以发现， 当加入本专利所述的阳离子表面活性剂之 后， 在不同的研磨剂、 氧化剂、 稳定剂的种类和含量的情况下， 抛光噪音都 消失了。
Claims
权利要求 、 一种化学机械抛光液， 含有水， 研磨剂， 氧化剂和水溶性阳离子表面 活性剂。
、 根据权利要求 1所述的抛光液， 所述的研磨剂为气相二氧化硅（fomed silica) 禾口 /或娃溶胶 (colloidal silica)。
、 根据权利要求 1所述的抛光液， 所述的氧化剂为含铁氧化剂或含铁氧 化剂和其他氧化剂的组合物。
、 根据权利要求 3所述的抛光液， 所述的含铁氧化剂为硝酸铁。
、 根据权利要求 3所述的抛光液， 所述的含铁氧化剂和其他氧化剂的组 合物为硝酸铁和单过硫酸氢钾的组合物。
、 根据权利要求 1所述的抛光液， 所述的水溶性阳离子表面活性剂为长 链烧基氯化铵、 长链垸基溴化铵、 末端含硅氧键的长链烷基氯化铵、 吉米奇类型季铵盐、 聚合型季铵盐中的一种或多种。
、 根据权利要求 6所述的抛光液， 所述的水溶性阳离子表面活性剂优选 为十二垸基三甲基氯化铵、 十二垸基三甲基溴化铵、 苄基三甲基氯化 铵、 辛基三甲基氯化铵、 3-三乙氧基硅基丙基三甲基氯化铵、 十八垸 基胺聚氧乙烯醚双季铵盐和 /或聚季铵盐 -10中的一种或多种。
、 根据权利要求 1 所述的抛光液， 所述的研磨剂的质量百分比为 0.2%~4% o
、 根据权利要求 4 或 5 所述的抛光液， 所述的硝酸铁的质量百分比为 0.05%~1.5%。
0、 根据权利要求 1所述的抛光液， 所述的水溶性阳离子表面活性剂的浓
度为 100-500ppm。 根据权利要求 1所述的抛光液， pH值为 1.5-2.5。
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| US9238754B2 (en) * | 2014-03-11 | 2016-01-19 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
| US9275899B2 (en) * | 2014-06-27 | 2016-03-01 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition and method for polishing tungsten |
| CN108624234A (zh) * | 2017-03-21 | 2018-10-09 | 安集微电子科技（上海）股份有限公司 | 一种化学机械抛光液 |
| CN109251675B (zh) * | 2017-07-13 | 2021-07-30 | 安集微电子科技（上海）股份有限公司 | 一种化学机械抛光液 |
| CN115785819B (zh) * | 2022-11-11 | 2024-08-16 | 万华化学集团电子材料有限公司 | 一种硅片抛光组合物及其应用 |
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