WO2011068283A1 - Réacteur de dépôt chimique en phase vapeur comportant une couche barrière de chaleur rayonnante pour améliorer le rendement énergétique - Google Patents
Réacteur de dépôt chimique en phase vapeur comportant une couche barrière de chaleur rayonnante pour améliorer le rendement énergétique Download PDFInfo
- Publication number
- WO2011068283A1 WO2011068283A1 PCT/KR2010/000924 KR2010000924W WO2011068283A1 WO 2011068283 A1 WO2011068283 A1 WO 2011068283A1 KR 2010000924 W KR2010000924 W KR 2010000924W WO 2011068283 A1 WO2011068283 A1 WO 2011068283A1
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- WIPO (PCT)
- Prior art keywords
- rod
- radiation
- radiant heat
- cvd reactor
- polysilicon
- Prior art date
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- 230000004888 barrier function Effects 0.000 title claims abstract description 59
- 238000005229 chemical vapour deposition Methods 0.000 title claims description 104
- 238000001816 cooling Methods 0.000 claims abstract description 118
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 112
- 229920005591 polysilicon Polymers 0.000 claims abstract description 110
- 239000000463 material Substances 0.000 claims abstract description 51
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 40
- 239000010703 silicon Substances 0.000 claims abstract description 40
- 238000000034 method Methods 0.000 claims abstract description 32
- 230000002829 reductive effect Effects 0.000 claims abstract description 15
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 12
- 239000010439 graphite Substances 0.000 claims abstract description 12
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 12
- 230000009467 reduction Effects 0.000 claims abstract description 5
- 230000005855 radiation Effects 0.000 claims description 157
- 238000006243 chemical reaction Methods 0.000 claims description 74
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 39
- 239000007789 gas Substances 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 34
- 230000000694 effects Effects 0.000 claims description 29
- 239000010410 layer Substances 0.000 claims description 29
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 28
- 239000011148 porous material Substances 0.000 claims description 24
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 18
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 18
- 229910052709 silver Inorganic materials 0.000 claims description 18
- 239000004332 silver Substances 0.000 claims description 18
- 229910045601 alloy Inorganic materials 0.000 claims description 12
- 239000000956 alloy Substances 0.000 claims description 12
- 239000000377 silicon dioxide Substances 0.000 claims description 12
- 229910052697 platinum Inorganic materials 0.000 claims description 9
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 9
- 229910052715 tantalum Inorganic materials 0.000 claims description 9
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 9
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 9
- 229910052721 tungsten Inorganic materials 0.000 claims description 9
- 239000010937 tungsten Substances 0.000 claims description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 229910052750 molybdenum Inorganic materials 0.000 claims description 8
- 239000011733 molybdenum Substances 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 229910052582 BN Inorganic materials 0.000 claims description 5
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 5
- 229910000323 aluminium silicate Inorganic materials 0.000 claims description 5
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- 239000002994 raw material Substances 0.000 claims description 5
- 229910001562 pearlite Inorganic materials 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 239000002356 single layer Substances 0.000 claims description 4
- HQSLRIXPNFGAQR-UHFFFAOYSA-N [SiH4].Cl Chemical compound [SiH4].Cl HQSLRIXPNFGAQR-UHFFFAOYSA-N 0.000 claims description 3
- 238000010521 absorption reaction Methods 0.000 claims description 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 229910000077 silane Inorganic materials 0.000 claims description 2
- 230000008569 process Effects 0.000 abstract description 26
- 230000003190 augmentative effect Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 16
- 230000000903 blocking effect Effects 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- 230000007423 decrease Effects 0.000 description 6
- 238000005265 energy consumption Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 6
- 238000000197 pyrolysis Methods 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 239000002826 coolant Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 3
- 239000005052 trichlorosilane Substances 0.000 description 3
- 235000005749 Anthriscus sylvestris Nutrition 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910003902 SiCl 4 Inorganic materials 0.000 description 2
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000004134 energy conservation Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 235000019362 perlite Nutrition 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 239000002918 waste heat Substances 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- -1 HCl and SiCl 4 Chemical class 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000003306 harvesting Methods 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000009421 internal insulation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000010451 perlite Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4418—Methods for making free-standing articles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
Definitions
- Polycrystalline silicon or polysilicon is a very important raw material used in the electronics industry.
- Polysilicon is the starting material used in the production of monocrystalline or polycrystalline silicon ingots used in the semiconductor and solar power industries.
- Semiconductor grade polysilicon contains impurities with electronic activity at parts per billion (ppb) or parts per trillion (ppt).
- the coolant inlet tube 48a and the outlet tube 48b are also connected to the substrate 40 to allow the coolant to flow so as not to exceed a predetermined temperature.
- the substrate 40 is also provided with a gas inlet 42 and a gas outlet 44.
- the silicon-containing gas compound is introduced into the reaction chamber 25 through the gas inlet 42 connected to the silicon-containing gas source 46, and the gas subjected to the CVD reaction is discharged out of the reaction chamber 25 through the gas outlet 44. do.
- two feed throughs 38 extend out of the substrate 40 into the reaction chamber 25, the ends of which are for example graphite 39, supported by a rod support 37. This is connected.
- One or more sets of rod filaments 34 are provided in the reaction chamber 25.
- the present invention provides a CVD reactor capable of producing large diameter polysilicon rods by reducing the net energy loss of the polysilicon rods during the CVD process, thereby reducing the temperature gradient of the entire inside of the polysilicon rods and also reducing the tensile stress. To provide for other purposes.
- the said radiation shield is made to be maintained at 400 degreeC or more during the said CVD reaction.
- the radiation shielding film is preferably made such that, during the CVD reaction, the temperature of the surface of the surface thereof facing the heated rod is maintained at 400 ° C or higher.
- the radiation shield reduces thermal energy loss from the polysilicon rod by at least one of the following effects: thermal barrier effect by high temperature radiation (> 400 ° C.), multilayer barrier thermal barrier effect, low emissivity of the barrier material. Barrier effect, and thermal insulation effect by reducing heat conduction by barrier thickness.
- thermal barrier effect by high temperature radiation (> 400 ° C.)
- multilayer barrier thermal barrier effect low emissivity of the barrier material.
- Barrier effect and thermal insulation effect by reducing heat conduction by barrier thickness.
- the efficiency of the barrier membrane is highly dependent on the membrane position within the reactor.
- the barrier must be positioned in such a way that its heat radiation source opposing side (the side facing the heated rod) is kept hot (high temperature) by intercepting radiant heat energy from the heated rod.
- FIG. 5 is a cross-sectional view showing the structure of a CVD reactor in which a multi-layered radiation shield in accordance with another embodiment of the present invention covers a portion of the cooling substrate wall in the CVD reactor.
- FIG. 12 is a plan view taken along the cutting line C-C shown in FIG. 11.
- ⁇ 1 spectroscopic surface emissivity of the rod 32
- the barrier film can maintain its own temperature at 400 ° C or higher. For example, consider the case of using 100 layers of loosely overlapped barriers, which act as if made of 50 individual barriers completely spaced between the barriers.
- the thermal energy blocking efficiency of the radiation shield according to the present invention the following three embodiments were performed.
- the conventional CVD reactor shown in FIG. 1 in which no radiation heat shielding film was installed in the Siemens CVD reactor was used.
- the diameter of the polysilicon rod was 115 mm
- electrical energy was consumed by 133 kW in the CVD reactor (comparative example) and the center temperature of the polysilicon rod rose to 1233 ° C.
Abstract
L'invention concerne un réacteur de dépôt chimique en phase vapeur Siemens. Un filament tige est installé dans le réacteur, et une ou plusieurs couches barrière de chaleur rayonnante est/sont installée(s) entre des parois de refroidissement. La couche barrière de chaleur rayonnante absorbe la chaleur rayonnante émise par une tige de silicium polycristallin chauffée dans un processus de dépôt chimique en phase vapeur, et fait rayonner à nouveau la chaleur absorbée (qui chauffe la couche barrière de chaleur rayonnante à une température égale ou supérieure à 400˚C) en direction de la tige de silicium polycristallin et des deux faces des parois de refroidissement afin de protéger lesdites parois contre la chaleur. La perte d'énergie nette de la tige de silicium polycristallin est réduite selon la quantité d'énergie rayonnée en direction de la tige de silicium polycristallin, ce qui permet d'économiser et de conserver une quantité importante d'énergie électrique pour le réacteur de dépôt chimique en phase vapeur. La réduction d'énergie est considérablement accrue quand on utilise de multiples couches barrières présentant une faible émissivité d'écran et une faible conductivité thermique d'écran. La pureté du silicium polycristallin fabriqué peut être maintenue grâce à l'utilisation de graphite très pur, qui est stable dans des conditions de température élevées, de graphite revêtu de carbure de silicium (SiC), de silicium ou d'autres matières d'écran thermique.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2009-0118543 | 2009-12-02 | ||
| KR1020090118543A KR101115697B1 (ko) | 2009-12-02 | 2009-12-02 | 에너지 효율을 높여주는 복사열 차단막을 갖는 화학기상증착 반응기 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2011068283A1 true WO2011068283A1 (fr) | 2011-06-09 |
Family
ID=43035010
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/KR2010/000924 WO2011068283A1 (fr) | 2009-12-02 | 2010-02-12 | Réacteur de dépôt chimique en phase vapeur comportant une couche barrière de chaleur rayonnante pour améliorer le rendement énergétique |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20110126761A1 (fr) |
| EP (1) | EP2330232A1 (fr) |
| KR (1) | KR101115697B1 (fr) |
| WO (1) | WO2011068283A1 (fr) |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100768148B1 (ko) * | 2006-05-22 | 2007-10-17 | 한국화학연구원 | 금속 코어수단을 이용한 다결정 실리콘 봉의 제조방법 |
| WO2013006522A1 (fr) * | 2011-07-01 | 2013-01-10 | Kagan Ceran | Cartouche de dépôt pour production de matériaux selon le processus de dépôt chimique en phase vapeur |
| US8778079B2 (en) * | 2007-10-11 | 2014-07-15 | Valence Process Equipment, Inc. | Chemical vapor deposition reactor |
| US20110159214A1 (en) * | 2008-03-26 | 2011-06-30 | Gt Solar, Incorporated | Gold-coated polysilicon reactor system and method |
| KR20130057424A (ko) * | 2010-04-12 | 2013-05-31 | 엠이엠씨 일렉트로닉 머티리얼스 쏘시에떼 퍼 아찌오니 | 열복사 차폐체를 포함하는 지멘스 반응기용 벨 자 |
| KR101279414B1 (ko) * | 2011-08-17 | 2013-06-27 | (주)세미머티리얼즈 | 폴리실리콘 제조장치 및 폴리실리콘 제조방법 |
| DE102011115782B4 (de) * | 2011-10-12 | 2013-04-25 | Centrotherm Sitec Gmbh | Reaktor mit beschichtetem Reaktorgefäß und Beschichtungsverfahren |
| KR101146864B1 (ko) * | 2011-10-27 | 2012-05-16 | 웅진폴리실리콘주식회사 | 폴리실리콘 제조용 반응기 |
| KR101420338B1 (ko) * | 2012-03-12 | 2014-07-16 | 한국실리콘주식회사 | 씨브이디 반응장치용 절연 슬리브 및 그 절연 슬리브가 구비된 씨브이디 반응장치 |
| KR101380767B1 (ko) * | 2012-04-25 | 2014-04-02 | 한국실리콘주식회사 | 폴리실리콘 제조용 화학기상증착 반응기 |
| JP2015535419A (ja) * | 2012-08-13 | 2015-12-10 | トライアングル リソース ホールディング （スイッツァランド） アーゲーＴｒｉａｎｇｌｅ Ｒｅｓｏｕｒｃｅ Ｈｏｌｄｉｎｇ （Ｓｗｉｔｚｅｒｌａｎｄ） Ａｇ | 熱光起電力装置用エネルギー変換・伝達配置、及び、そのエネルギー変換・伝達配置を含む熱光起電力装置 |
| EP2883002A1 (fr) * | 2012-08-13 | 2015-06-17 | Triangle Resource Holding (Switzerland) AG | Structure multicouche pour dispositifs thermophotovoltaïques et dispositifs thermophotovoltaïques comprenant une telle structure |
| KR101311739B1 (ko) * | 2013-01-14 | 2013-10-14 | 주식회사 아이제이피에스 | 폴리실리콘 제조장치 |
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| KR101654148B1 (ko) * | 2013-09-27 | 2016-09-05 | 한화케미칼 주식회사 | 폴리실리콘 제조용 화학 기상 증착 반응기 |
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| CN107109641B (zh) * | 2014-12-23 | 2019-06-18 | 瑞科硅公司 | 在热分解反应器中利用反射能管理温度分布的设备和方法 |
| CN104714443B (zh) * | 2014-12-30 | 2017-08-15 | 北京京仪椿树整流器有限责任公司 | 一种多晶硅还原调功电源及其电气控制系统 |
| WO2016116384A1 (fr) * | 2015-01-19 | 2016-07-28 | Oerlikon Surface Solutions Ag, Pfäffikon | Chambre à vide munie d'une structure particulière permettant d'augmenter l'évacuation de la chaleur |
| KR101895538B1 (ko) | 2015-09-08 | 2018-09-05 | 한화케미칼 주식회사 | 폴리실리콘 제조 장치 |
| MY185420A (en) * | 2015-09-08 | 2021-05-19 | Hanwha Chemical Corp | Polysilicon manufacturing apparatus |
| KR101719952B1 (ko) * | 2016-01-29 | 2017-03-27 | 주식회사 효성 | 탄화수소 스트림 가열장치 |
| JP7020076B2 (ja) * | 2016-11-24 | 2022-02-16 | 三菱マテリアル株式会社 | 多結晶シリコンロッド製造用反応炉の製造方法及びこの反応炉を用いた多結晶シリコンロッドの製造方法 |
| WO2019025559A1 (fr) * | 2017-08-02 | 2019-02-07 | Oerlikon Surface Solutions Ag, Pfäffikon | Dispositif de revêtement pour réaliser un revêtement à basse température très efficace |
| CN207331058U (zh) * | 2017-08-25 | 2018-05-08 | 京东方科技集团股份有限公司 | 一种镀膜装置 |
| TWI672388B (zh) * | 2018-06-21 | 2019-09-21 | 漢民科技股份有限公司 | 用於氣相沉積設備之反應腔室 |
| CN111575790A (zh) * | 2020-05-14 | 2020-08-25 | 中环领先半导体材料有限公司 | 一种降低硅单晶片多晶气相沉积崩边率的工艺 |
| CN116815318A (zh) * | 2023-06-07 | 2023-09-29 | 山西烁科晶体有限公司 | 一种制备高纯度SiC多晶棒的装置和方法 |
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| US20020014197A1 (en) * | 1997-12-15 | 2002-02-07 | Keck David W. | Chemical vapor deposition system for polycrystalline silicon rod production |
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| US3011877A (en) | 1956-06-25 | 1961-12-05 | Siemens Ag | Production of high-purity semiconductor materials for electrical purposes |
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| DE1138481C2 (de) | 1961-06-09 | 1963-05-22 | Siemens Ag | Verfahren zur Herstellung von Halbleiteranordnungen durch einkristalline Abscheidung von Halbleitermaterial aus der Gasphase |
| DE1229986B (de) * | 1964-07-21 | 1966-12-08 | Siemens Ag | Vorrichtung zur Gewinnung reinen Halbleiter-materials |
| US4173944A (en) | 1977-05-20 | 1979-11-13 | Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh | Silverplated vapor deposition chamber |
| JPH0639352B2 (ja) * | 1987-09-11 | 1994-05-25 | 信越半導体株式会社 | 単結晶の製造装置 |
| WO1999031013A1 (fr) | 1997-12-15 | 1999-06-24 | Advanced Silicon Materials, Inc. | Systeme de depot chimique en phase vapeur permettant de produire des barreaux en silicium polycristallin |
| JP2001294416A (ja) | 2000-04-07 | 2001-10-23 | Mitsubishi Materials Polycrystalline Silicon Corp | 多結晶シリコンの製造装置 |
| ES2331283B1 (es) * | 2008-06-25 | 2010-10-05 | Centro De Tecnologia Del Silicio Solar, S.L. (Centsil) | Reactor de deposito de silicio de gran pureza para aplicaciones fotovoltaicas. |
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- 2009-12-02 KR KR1020090118543A patent/KR101115697B1/ko not_active IP Right Cessation
-
2010
- 2010-02-12 WO PCT/KR2010/000924 patent/WO2011068283A1/fr active Application Filing
- 2010-02-26 EP EP10002031A patent/EP2330232A1/fr not_active Withdrawn
- 2010-03-11 US US12/722,073 patent/US20110126761A1/en not_active Abandoned
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| US4023520A (en) * | 1975-04-28 | 1977-05-17 | Siemens Aktiengesellschaft | Reaction container for deposition of elemental silicon |
| US4150168A (en) * | 1977-03-02 | 1979-04-17 | Kabushiki Kaisha Komatsu Seisakusho | Method and apparatus for manufacturing high-purity silicon rods |
| US20020014197A1 (en) * | 1997-12-15 | 2002-02-07 | Keck David W. | Chemical vapor deposition system for polycrystalline silicon rod production |
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Also Published As
| Publication number | Publication date |
|---|---|
| US20110126761A1 (en) | 2011-06-02 |
| KR20110061984A (ko) | 2011-06-10 |
| KR101115697B1 (ko) | 2012-03-06 |
| EP2330232A1 (fr) | 2011-06-08 |
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