WO2011066697A1 - Système de conduite d'alimentation de gaz et procédé connexe - Google Patents

Système de conduite d'alimentation de gaz et procédé connexe Download PDF

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Publication number
WO2011066697A1
WO2011066697A1 PCT/CN2009/076034 CN2009076034W WO2011066697A1 WO 2011066697 A1 WO2011066697 A1 WO 2011066697A1 CN 2009076034 W CN2009076034 W CN 2009076034W WO 2011066697 A1 WO2011066697 A1 WO 2011066697A1
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WO
WIPO (PCT)
Prior art keywords
stage
pipe
pipeline
gas
diverting
Prior art date
Application number
PCT/CN2009/076034
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English (en)
Chinese (zh)
Inventor
范振华
Original Assignee
东莞宏威数码机械有限公司
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Filing date
Publication date
Application filed by 东莞宏威数码机械有限公司 filed Critical 东莞宏威数码机械有限公司
Publication of WO2011066697A1 publication Critical patent/WO2011066697A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes

Definitions

  • the present invention relates to a gas supply system and method, and more particularly to a gas supply system and method suitable for coating by chemical vapor deposition. Background technique
  • Amorphous silicon solar cells are a new solar cell technology newly developed in recent years in the world.
  • the thickness of the silicon material of the amorphous silicon thin film solar cell is only about 1 micrometer, which is 1/200-1/300 of the thickness of the silicon material of the single crystal silicon solar cell.
  • amorphous silicon thin film solar cells are currently the most promising solar cells that can significantly reduce costs.
  • the production method of amorphous silicon thin film solar cells mainly uses Chemical Vapor Deposition (CVD). It is widely used in the application of a film from a micro device including a semiconductor device to an object of a meter size. In recent years, chemical chemical vapor deposition has also been widely used in the manufacture of thin film solar panels having a diagonal of 1 m or more.
  • the most difficult technical breakthrough in the current chemical vapor deposition coating is how to ensure the supply system and method of supply gas, because the supply of gas supply will involve the overall coating uniformity problem.
  • the existing gas supply system and method change the jet flow by setting different gas jet holes, that is, by setting different jet holes according to different positions on the air jet plate with uneven thickness. Make the gas ejected, but use this different length of the jet hole on the spray plate to control the gas flow to obtain a uniform gas design. To the accuracy requirement, the supplied gas is not enough, which affects the difference in film composition and film thickness unevenness during coating, which affects the quality stability and yield of semiconductor products.
  • An object of the present invention is to provide a gas supply system capable of ejecting a gas having a higher average degree of hook.
  • Another object of the present invention is to provide a gas supply method capable of ejecting a gas having a higher uniformity.
  • the present invention provides a gas supply system including a main intake pipe, a multi-stage split pipe, and a manifold.
  • the main intake pipe introduces a gas generated by an external gas generating device;
  • the multi-stage splitting pipe performs multi-stage splitting of the gas introduced by the main intake pipe, and the multi-stage splitting pipeline has at least two stages.
  • the lower-stage diverting pipeline is connected with the upper-stage diverting pipeline, and the number of the diverting pipelines of the lower-stage diverting pipeline is n times the number of the diverting pipelines of the upper-stage diverting pipeline, and the diverging pipelines at the same diversion grade are symmetric.
  • the first stage branching line of the multi-stage splitting line is connected to the main intake pipe, wherein n is a natural number greater than or equal to 2; the collecting device is provided with a uniformly distributed jet hole, the multi-stage The last stage of the split line is in communication with the manifold.
  • the diameter of the shunt pipe of the lower-stage split pipe of the multi-stage split pipe is smaller than the pipe diameter of the branch pipe of the upper-stage split pipe. Since the next-stage pipeline divides the gas in the upper-stage pipeline, the gas flow in the pipeline is gradually reduced. This design is beneficial to save costs and make the structure more reasonable and compact.
  • a plurality of exhaust pipes are further included, and the exhaust pipe is accommodated in the flow collecting device and communicates with the shunt pipes of the last-stage splitting pipe of the multi-stage splitting pipe, respectively.
  • An exhaust hole is uniformly disposed on the exhaust pipe, and an axial direction of the exhaust hole is perpendicular to an axial direction of the gas injection hole of the confluence device.
  • the axial direction of the exhaust hole is perpendicular to the axial direction of the gas injection hole of the confluence device, thereby making the flow device Gas can be more Effectively and quickly tend to balance, so that the gas ejected from the gas jet holes of the flow device is high, which improves the stability and yield of the film formation.
  • the method further includes a plurality of buffer chambers, wherein the plurality of buffer chambers are respectively disposed between the main intake pipe and the first-stage split pipeline, and the multi-stage split pipeline is shunted Between the line and the next stage split line.
  • the buffer chamber can store a certain gas and has an over-buffering function, so that the shunting of the next-stage pipeline to the upper-stage pipeline is more uniform.
  • the invention provides a gas supply method comprising the steps of: providing a main intake pipe for introducing a gas generated by an external gas generating device; and providing a multi-stage diverting line for introducing the main intake pipe
  • the gas is multi-stage divided, the multi-stage splitting pipeline has at least two stages, the lower-stage splitting pipeline is connected with the upper-stage diverting pipeline, and the number of the diverting pipeline of the lower-stage diverting pipeline is the upper-stage pipeline
  • the number of the diverting tubes is n times, and the diverting lines at the same diverting stage are symmetrically arranged, and the first-stage diverting line of the multi-stage diverting line is in communication with the main intake pipe, wherein n is a natural number greater than or equal to 2
  • Providing a flow collecting device the flow collecting device is provided with a gas jet hole uniformly distributed, and the last stage pipeline of the multi-stage splitting pipeline is respectively connected with the flow collecting device.
  • the diameter of the shunt pipe of the lower-stage splitting pipe of the multi-stage splitting pipe is smaller than the pipe diameter of the shunt pipe of the upper-stage pipeline. Since the next-stage pipeline divides the gas in the upper-stage pipeline, the gas flow in the pipeline is gradually reduced. This design is beneficial to save costs and make the structure more compact.
  • the method further includes the step of providing a plurality of exhaust pipes in the flow collecting device, wherein the exhaust pipes are respectively in communication with the shunt pipes of the final splitting pipes of the multi-stage splitting pipe.
  • the exhaust pipe is uniformly provided with a vent hole, and an axial direction of the vent hole is perpendicular to an axial direction of the gas injection hole of the merging device.
  • the axial direction of the exhaust hole is perpendicular to the axial direction of the gas injection hole of the confluence device, thereby making the flow device
  • the gas can be more effectively and quickly balanced, so that the gas injected from the gas injection holes of the collecting device has higher uniformity, and the stability and yield of the film formation are improved.
  • a buffering chamber is disposed between the main intake pipe and the first-stage diverting line, and between the upper-stage diverting line and the lower-stage diverting line of the multi-stage diverting line.
  • the buffer chamber can store a certain amount
  • the gas has an over-buffering function, so that the shunting of the next-stage pipeline to the upper-stage pipeline is more uniform.
  • the gas supply system of the present invention includes a main intake pipe, a multi-stage split pipe, and a confluence device.
  • the multi-stage splitting pipeline has multiple stages, and the diverting pipelines in the same diversion stage are symmetrically arranged, and the first-stage diverting pipeline of the multi-stage diverting pipeline is connected with the main intake pipe, and the end of the multi-stage diverting pipeline
  • the pipelines are respectively connected to the flow collecting device, and the gas flow holes are uniformly distributed on the flow collecting device, and the gas introduced by the main air intake pipe is multi-stage shunted through the multi-stage splitting pipeline, thereby obtaining a higher level.
  • the gases are all hooked out from the manifold, and the gas is supplied for coating, so that the film composition and the film thickness at the time of coating are uniform, and the quality stability and yield of the semiconductor product are improved.
  • Figure 1 is a schematic view showing the structure of a gas supply system of the present invention.
  • Figure 2 is another schematic view of the gas supply system of Figure 1.
  • FIG. 3 is a flow chart of a gas supply method of the present invention. detailed description
  • the present invention relates to a gas supply system including a main intake pipe, a multi-stage split pipe, and a manifold.
  • the main intake pipe introduces a gas generated by an external gas generating device;
  • the multi-stage splitting pipe performs multi-stage splitting of the gas introduced by the main intake pipe, and the multi-stage splitting pipeline has at least two stages.
  • the lower-stage diverting pipeline is connected with the upper-stage diverting pipeline, and the number of the diverting pipeline of the lower-stage diverting pipeline is n times of the number of the sub-system diverting pipeline, and the diverting pipelines at the same diversion level are symmetrically arranged.
  • the first-stage splitting pipeline of the multi-stage splitting pipeline is in communication with the main intake pipe, wherein n is a natural number greater than or equal to 2; the collecting device is provided with a gas-jet hole uniformly distributed, and the multi-stage shunt pipe The last stage of the road is in communication with the manifold. Multi-stage shunting of the gas introduced by the main intake pipe through a multi-stage split line, so that the confluence device can eject a gas with a higher uniformity, so that the film composition and film thickness at the time of coating Uniformity is uniform, improving the quality stability and yield of semiconductor products.
  • Figure 1 illustrates an embodiment of a solid gas supply system 10 of the present invention.
  • the gas supply system 10 includes a main intake pipe 100, a multi-stage split line 200, and a confluence device 300.
  • the multi-stage splitting pipeline 200 includes a four-stage splitting pipeline, and each of the diverting pipelines is composed of a diverter pipe, and the first-stage diverting pipeline includes two first-stage shunt pipes 210, the number of which is the main intake pipe 100. By double the number, the gas from the main intake pipe 100 can be more evenly distributed to make the gas flow uniform.
  • the number of the second-stage shunt tubes 220 is twice that of the first-stage shunt tubes 210, and the number of the third-stage and fourth-stage shunt tubes is three times that of the upper level, respectively, the first-stage shunt tubes 210 and the main intake ducts 100.
  • the second-stage shunt tube 220 is connected to the first-stage shunt tube 210 and the third-stage shunt tube 230, and the fourth-stage shunt tube 240 and the third-stage shunt tube 230 and the confluence device respectively.
  • each of the shunt tubes in the same shunting stage is symmetrically disposed with respect to the connected upper-stage shunting pipeline, and the number of stages of the multi-stage shunting pipeline 200 can be correspondingly set according to actual needs, and the shunting pipelines of the various levels
  • the number of shunt tubes is a natural number greater than or equal to 2, preferably 2 or 3 or 4.
  • the flow collecting device 300 is provided with a uniformly distributed gas injection hole 310, and the fourth-stage branch pipe 240 of the multi-stage branching line 200 is in communication with the flow collecting device 300, respectively.
  • the gas supply system 10 further includes a plurality of exhaust pipes 400, and the exhaust pipes 400 are arranged in parallel to be accommodated in the confluence device 200 and respectively corresponding to the multi-stage shunt pipe 200.
  • the shunt tube 240 of the four-stage split line is connected.
  • Each of the exhaust pipes 400 is hooked with a venting hole 410, and an axial direction of the venting hole 410 is perpendicular to an axial direction of the gas injection hole 310 of the merging device 300. Therefore, the gas in the collecting device 300 can be more effectively and quickly balanced, so that the gas ejected from the gas injection holes 310 of the confluent device 300 is high in hooking property, and the stability and yield of the film formation are improved.
  • the diameter of the shunt pipe of each of the lower-stage splitting pipes of the multi-stage splitting pipe 200 is smaller than the pipe diameter of the shunt pipe of the upper-stage pipe. Since the next-stage pipeline divides the gas in the upper-stage pipeline, the gas flow rate in the pipeline is gradually reduced. This design is beneficial to save costs and make the structure more reasonable and compact.
  • the gas supply system 10 further includes a plurality of buffer chambers 500.
  • the plurality of buffer chambers 500 are respectively disposed between the main intake pipe 100 and the first-stage shunt tube 210. Between the upper shunt tube and the lower shunt tube of the stage split line.
  • the buffer chamber 500 can store a certain gas, There is an over-buffering function, so that the shunting of the next-stage pipeline to the upper-stage pipeline is more uniform.
  • the flow of the gas in the gas supply system 10 of the present embodiment is shown in the direction of the arrow in FIG. 2, the main intake pipe 100 introduces the gas generated by the external gas generating device, and then the gas enters the multi-stage bypass pipe 200.
  • the gas from the main intake pipe 100 is evenly divided by the multi-stage diverting line 200 to make the gas flow uniformity uniform.
  • the multi-stage shunted gas is discharged through the exhaust pipe 400 at the confluence device.
  • the confluence in 300 is formed by filming from the gas injection holes 310 in the confluence device 300 onto the substrate in the reaction chamber (not shown).
  • FIG. 3 is a flow chart of a gas supply method of the present invention, comprising the following steps:
  • Step S1 providing a main intake pipe for introducing the gas generated by the external air generating device;
  • Step S2 providing a multi-stage splitting pipeline for performing multi-stage splitting of the gas introduced by the main intake pipe,
  • the multi-stage splitting pipeline has at least two stages, the lower-stage diverting pipeline is connected with the upper-stage diverting pipeline, and the number of the diverting pipeline of the lower-stage diverting pipeline is n times of the number of the diverting pipeline of the upper-stage pipeline,
  • Each of the split lines of the same splitter stage is symmetrically disposed, and the first stage splitter line of the multi-stage split line is connected to the main intake pipe, wherein n is a natural number greater than or equal to 2;
  • Step S3 providing a flow collecting device, wherein the collecting device is provided with a gas jet hole uniformly distributed, and the last pipeline of the multi-stage splitting pipeline is respectively connected with the collecting device.
  • the method further includes providing a plurality of exhaust pipes and accommodating the same in the confluence device, wherein the exhaust pipes are respectively in communication with the plurality of final stage diverting pipes of the multi-stage diverting line.
  • a buffer chamber is disposed between the main intake pipe and the first stage branch line, and between the upper stage split line and the next stage split line of the multistage split line.
  • the gas supply system of the present invention includes a main intake pipe 100, a multi-stage branch line 200, and a confluence device 300.
  • the multi-stage splitting pipeline 200 has multiple stages, and the diverting pipelines in the same diverting stage are symmetrically arranged, and the multi-stage diverting pipeline 200 first-stage diverting pipe 210 is in communication with the main intake pipe 100, and the multi-stage diverting pipeline
  • the fourth stage shunt tube 240 of the second stage that is, the fourth stage shunt tube 240, communicates with the confluence device 300, and the confluence device 300 is provided with a gas jet hole 310 distributed in the hook line, and the main inlet is passed through the multi-stage branch line 200.
  • the gas introduced by the gas pipe 100 is multi-staged to obtain a gas of higher uniformity, and the gas is uniformly ejected from the confluence device 300 to supply a gas having uniform uniformity.
  • the coating film has the same film composition and film thickness at the time of coating, and improves the quality stability and yield of the semiconductor product.

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)

Abstract

L'invention propose un système de conduite d'alimentation de gaz et un procédé connexe. Ce système (10) comprend une conduite d'admission de gaz (100), une conduite en coude à multi-étages (200) et un dispositif de confluence (300). Cette conduite en coude à multi-étages (200) comprend au moins deux étages (210, 220, 230, 240), les conduites en coude de l'étage inférieur étant en contact avec les conduites en coude de l'étage supérieur. Le nombre de conduites en coude des conduites de l'étage inférieur représente n fois le nombre de conduites en coude de l'étage supérieur, n étant un nombre naturel supérieur ou égal à 2. Chaque conduite en coude se trouvant au même niveau est disposé en symétrie, la conduite du premier étage (210) étant reliée à la conduite d'admission de gaz (100). Le dispositif de confluence (300) est uniformément perforé d'orifices de gaz (310) et les conduites en coude du dernier étage (240) communiquent avec le dispositif de confluence (300). Le gaz pénétrant la conduite d'admission de gaz (100) est distribué sur différents étages moyennant les conduites en coude à multi-étages, de sorte que le dispositif de confluence injecte uniformément le gaz afin d'obtenir un film uniforme, améliorant donc la stabilité, et de ce fait, la qualité ainsi que le rendement du produit semi-conducteur.
PCT/CN2009/076034 2009-12-01 2009-12-25 Système de conduite d'alimentation de gaz et procédé connexe WO2011066697A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN200910246907.5 2009-12-01
CN2009102469075A CN101899652B (zh) 2009-12-01 2009-12-01 气体供应系统及方法

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WO2011066697A1 true WO2011066697A1 (fr) 2011-06-09

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WO (1) WO2011066697A1 (fr)

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Publication number Priority date Publication date Assignee Title
CN103712229A (zh) * 2013-12-19 2014-04-09 常熟市联诚光源电器配件有限公司 新型芯柱生产设备集中送风系统
CN106155120A (zh) * 2016-09-08 2016-11-23 中国航空工业集团公司西安飞机设计研究所 一种多路流量分配方法及多路流量分配系统
CN110449196A (zh) * 2019-09-18 2019-11-15 中国人民解放军军事科学院军事医学研究院 一种多向分流管
CN110629168B (zh) * 2019-10-30 2021-11-02 东北大学 一种真空镀膜机的蒸发装置
CN115156195A (zh) * 2022-06-10 2022-10-11 深圳泰德半导体装备有限公司 等离子清洗装置
CN116550572A (zh) * 2023-06-01 2023-08-08 海目星激光科技集团股份有限公司 膜片烘干系统及其控制方法

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US5622606A (en) * 1993-04-22 1997-04-22 Balzers Aktiengesellschaft Gas inlet arrangement
CN1330507A (zh) * 2000-04-26 2002-01-09 尤纳克西斯巴尔策斯公司 射频等离子发生器
DE10045958A1 (de) * 2000-09-16 2002-04-04 Muegge Electronic Gmbh Vorrichtung zum Leiten eines gasförmigen Mediums in eine und/oder aus einer Prozesskammer
CN1535329A (zh) * 2001-01-09 2004-10-06 ������-�������Ȳ�����˹�ҵ��ѧ 将一流体流分成多个分流的流体分配单元
CN101260518A (zh) * 2007-03-05 2008-09-10 应用材料公司 涂覆设备和气体供应系统

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CN2887888Y (zh) * 2005-12-15 2007-04-11 群康科技(深圳)有限公司 真空蒸镀装置
CN201568737U (zh) * 2009-12-01 2010-09-01 东莞宏威数码机械有限公司 气体供应系统

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Publication number Priority date Publication date Assignee Title
US5622606A (en) * 1993-04-22 1997-04-22 Balzers Aktiengesellschaft Gas inlet arrangement
CN1330507A (zh) * 2000-04-26 2002-01-09 尤纳克西斯巴尔策斯公司 射频等离子发生器
DE10045958A1 (de) * 2000-09-16 2002-04-04 Muegge Electronic Gmbh Vorrichtung zum Leiten eines gasförmigen Mediums in eine und/oder aus einer Prozesskammer
CN1535329A (zh) * 2001-01-09 2004-10-06 ������-�������Ȳ�����˹�ҵ��ѧ 将一流体流分成多个分流的流体分配单元
CN101260518A (zh) * 2007-03-05 2008-09-10 应用材料公司 涂覆设备和气体供应系统

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CN101899652A (zh) 2010-12-01

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